CN106449859A - 一种砷化镓量子点增强的红外探测器及其制备方法 - Google Patents
一种砷化镓量子点增强的红外探测器及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种砷化镓量子点增强的石墨烯/碲镉汞红外探测器及其制备方法，该石墨烯/碲镉汞红外探测器自下而上依次有衬底、导电镀膜层、碲镉汞层、石墨烯层及砷化镓量子点层，所述的红外探测器还设有第一电极和第二电极，第一电极设置在导电镀膜层上，第二电极设置在石墨烯层上。其制备方法如下：先在衬底上沉积导电镀膜层，再沉积碲镉汞层；然后将石墨烯转移至碲镉汞层上；在石墨烯层上制备砷化镓量子点层；最后在石墨烯层及导电镀膜层上分别制作电极，获得红外探测器。本发明的砷化镓量子点增强的石墨烯/碲镉汞红外探测器利用砷化镓量子点引入的光生掺杂效应来获得具有高转化效率的石墨烯/碲镉汞红外探测器。
Description
技术领域
本发明涉及一种新型红外探测器及其制造方法，尤其涉及砷化镓量子点增强的石墨烯/碲镉汞红外探测器及其制备方法，属于红外探测器技术领域。
背景技术
光电探测器是指由辐射引起被照射材料电导率改变的一种物理现象。光电探测器在军事和国民经济的各个领域有广泛用途。在可见光或近红外波段主要用于射线测量和探测、工业自动控制、光度计量等；在红外波段主要用于导弹制导、红外热成像、红外遥感等方面。
光电探测器能把光信号转换为电信号。根据器件对辐射响应的方式不同或者说器件工作的机理不同，光电探测器可分为两大类：一类是光子探测器；另一类是热探测器。根据器件结构可以分为光电导型和结型光电探测器。光电导性是由于光子在半导体中被吸收时，产生可移动的载流子所造成的。目前纳米半导体光电探测器大多都是基于光电导型结构，由于电极间的载流子传输时间的限制，其速度、响应时间等性能都较差。光电探测器的响应速度决定了其跟随光学信号快速转换的能力，在光波通讯及光通讯中有着极其重要的作用。较慢的响应速度将严重限制了光电探测器在光电器件集成电路中的应用。
自石墨烯材料发现以来，其在电学、光学、磁学以及力学方面表现出的优异性质如极高的载流子迁移率、高透光新、高的杨氏模量等引发了石墨烯在诸多领域应用的憧憬。其中石墨烯在红外探测器领域的应用研究为石墨烯在能源领域的应用打开了大门。目前，已有研究者利用石墨烯以及碲镉汞做成红外探测器，且在很大程度上简化了传统红外探测器制造工艺，可以大大降低生产制造成本。对于红外探测器应用来说，碲镉汞具有较合适的禁带宽度，也是直接带隙材料，预期可以获得更高的转化效率。石墨烯/碲镉汞红外探测器的研究到目前为止还未有报道，在此基础上，本发明提出了砷化镓量子点增强的石墨烯/碲镉汞红外探测器，砷化镓量子点薄膜层的加入可以大大提升石墨烯/碲镉汞红外探测器的转化效率。
发明内容
本发明的目的在于提供一种光转化效率高且制备工艺简单的砷化镓量子点增强的石墨烯/碲镉汞红外探测器及其制备方法。
本发明的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，自下而上依次有衬底、导电镀膜层、碲镉汞层、石墨烯层及砷化镓量子点层，所述的红外探测器还设有第一电极和第二电极，第一电极设置在导电镀膜层上，第二电极设置在石墨烯层上。
所述的导电镀膜层可以为金属、ITO、FTO、n型掺杂砷化镓或p型掺杂砷化镓。
所述的石墨烯层中的石墨烯通常为1-10层。
所述的砷化镓量子点层可以为砷化镓量子点薄膜，所述的砷化镓量子点直径为1nm-1μm。
所述的衬底可以为刚性衬底或柔性衬底。
所述的第一电极和第二电极均可为金、钯、银、钛、铬和镍中的一种或几种的复合电极。
制备上述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器的方法，包括如下步骤：
1)在洁净的衬底上生长导电镀膜层；
2)在导电镀膜层上沉积碲镉汞层，并在导电镀膜层表面预留生长第一电极的面积；
3)将硼掺杂石墨烯转移至碲镉汞层上；
4)在石墨烯层上制作砷化镓量子点层，并在石墨烯层表面预留生长第二电极的面积；
5)在导电镀膜层上沉积第一电极，并在石墨烯层上沉积第二电极。
本发明与现有技术相比具有的有益效果是：本发明的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，通过向石墨烯/碲镉汞红外探测器中加入砷化镓量子点薄膜层，可起到光掺杂作用，使得该红外探测器的光电转化效率在原基础上提升15％左右，此外，与传统红外探测器制造工艺相比，本发明的红外探测器的制备工艺简单，成本较低，便于推广。
附图说明
图1图1为砷化镓量子点增强的石墨烯/碲镉汞红外探测器的结构示意图。
具体实施方式
下面结合附图和具体实施例对本发明做进一步说明。
参照图1，本发明的砷化镓量子点增强的石墨烯/碲镉汞红外探测器自下而上依次有衬底1、导电镀膜层2、碲镉汞层3、石墨烯层4及砷化镓量子点层6，所述的红外探测器还设有第一电极5和第二电极7，第一电极5设置在导电镀膜层2上，第二电极7设置在石墨烯层4上。
实施例1：
1)将聚酰亚胺柔性衬底在去离子水中清洗干净并吹干；
2)在聚酰亚胺柔性衬底上利用磁控溅射沉积40纳米厚的掺铟氧化锡；
3)在掺铟氧化锡层上利用物理气相沉积技术沉积6微米厚的碲镉汞层，并在ITO层上预留生长第一电极的面积；
4)将单层石墨烯转移至碲镉汞层上；
5)在石墨烯上旋涂砷化镓量子点溶液，并在石墨烯上预留生长第二电极的面积；所述砷化镓量子点直径为1nm-1μm；
6)在石墨烯预留面积处以及ITO层上预留面积处涂覆银浆并烘干；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
红外照射情况下在砷化镓量子点和碲镉汞层中产生的电子均向石墨烯中注入，而碲镉汞层收集空穴，从而产生电势差，由于砷化镓量子点层的光掺杂作用可显著提高红外探测器的光电转化效率。
实施例2：
1)将玻璃衬底在去离子水中清洗干净并吹干；
2)在玻璃衬底上利用磁控溅射沉积200纳米厚的掺氟氧化锡；
3)在掺氟氧化锡层上利用物理气相沉积技术沉积8微米厚的碲镉汞层，并在FTO层上预留生长第一电极的面积；
4)将三层石墨烯转移至碲镉汞层上；
5)在石墨烯上喷涂砷化镓量子点溶液，并在石墨烯层上预留生长第二电极的面积；所述砷化镓量子点直径为1nm-1μm；
6)在石墨烯层预留面积处以及掺氟氧化锡层上预留面积处热蒸发金电极；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
实施例3：
1)将陶瓷衬底在去离子水中清洗干净并吹干；
2)在陶瓷衬底上利用电子束蒸发沉积60纳米厚的镍金属；
3)在镍金属层上利用化学水浴法沉积5微米厚的碲镉汞层，并在镍金属层上预留生长第一电极的面积；
4)将10层石墨烯转移至碲镉汞层上；
5)在石墨烯上制备砷化镓量子点薄膜，并在石墨烯层上预留生长第二电极的面积；
6)在石墨烯层预留面积处以及镍金属层上预留面积处丝网印刷银电极；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
实施例4：
1)将陶瓷衬底在去离子水中清洗干净并烘干；
2)在陶瓷衬底上利用电子束蒸发沉积60纳米厚的镍金属；
3)在镍金属层上利用化学水浴法沉积5微米厚的碲镉汞层，并在镍金属层上预留生长第一电极的面积；
4)将10层石墨烯转移至碲镉汞层上；
5)在石墨烯上滴涂砷化镓量子点溶液，并在石墨烯层上预留生长第二电极的面积；所述砷化镓量子点直径为1nm-1μm；
6)在石墨烯上预留面积处以及镍金属层上预留面积处丝网印刷银电极；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
实施例5：
1)将聚对苯二甲酸乙二醇酯衬底在去离子水中清洗干净并吹干；
2)在聚对苯二甲酸乙二醇酯衬底上利用脉冲激光沉积100纳米厚的掺铝砷化镓；
3)在掺铝砷化镓层上利用蒸汽压沉积技术沉积10微米厚的碲镉汞层，并在掺铝砷化镓上预留生长第一电极的面积；
4)将8层石墨烯转移至碲镉汞层上；
5)在石墨烯上旋涂砷化镓量子点溶液，并在石墨烯层上预留生长第二电极的面积；所述砷化镓量子点直径为1nm-1μm；
6)在石墨烯层预留面积处以及掺铝砷化镓层预留面积处热蒸发钯、银、钛复合电极；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
实施例6：
1)将碳化硅衬底在去离子水中清洗干净并吹干；
2)在碳化硅衬底上利用金属有机化学气相沉积150纳米厚的掺铝砷化镓；
3)在掺铝砷化镓层上利用蒸汽压沉积技术沉积3微米厚的碲镉汞层，并在掺铝砷化镓层上预留生长第一电极的面积；
4)将6层石墨烯转移至碲镉汞层上；
5)在石墨烯上制备砷化镓量子点薄膜，并在石墨烯层上预留生长第二电极的面积；
6)在石墨烯层预留面积处以及掺铝砷化镓层预留面积处热蒸发铬、镍复合电极；得到砷化镓量子点增强的石墨烯/碲镉汞红外探测器。
Claims (7)
1.一种砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于自下而上依次有衬底(1)、导电镀膜层(2)、碲镉汞层(3)、石墨烯层(4)及砷化镓量子点层(6)，所述的红外探测器还设有第一电极(5)和第二电极(7)，第一电极(5)设置在导电镀膜层(2)上，第二电极(7)设置在石墨烯层(4)上。
2.根据权利要求1所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于所述的导电镀膜层(2)为金属、ITO、FTO、n型掺杂砷化镓或p型掺杂砷化镓。
3.根据权利要求1所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于所述的石墨烯层(4)中的石墨烯为1-10层。
4.根据权利要求1所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于所述的砷化镓量子点层(6)为砷化镓量子点层，所述的砷化镓量子点直径为1nm-1μm。
5.根据权利要求1所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于所述的衬底(1)为刚性衬底或柔性衬底。
6.根据权利要求1所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器，其特征在于所述的第一电极(5)为金、钯、银、钛、铬和镍中的一种或几种的复合电极，所述的第二电极(7)为金、钯、银、钛、铬和镍中的一种或几种的复合电极。
7.制备如权利要求1～6任一项所述的砷化镓量子点增强的石墨烯/碲镉汞红外探测器的方法，其特征在于包括如下步骤：
1)在洁净的衬底(1)上生长导电镀膜层(2)；
2)在导电镀膜层(2)上沉积碲镉汞层(3)，并在导电镀膜层(2)表面预留生长第一电极(5)的面积；
3)将石墨烯转移至碲镉汞层(3)上；
4)在石墨烯层(4)上制作砷化镓量子点层(6)，并在石墨烯层(4)表面预留生长第二电极(7)的面积；
5)在导电镀膜层(2)上沉积第一电极(5)，并在石墨烯层(4)上沉积第二电极(7)。
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