CN106449857A - 一种肖特基结的紫外光电探测器及其制备方法 - Google Patents
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Abstract
本发明公开了一种基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器及其制备方法,其特征是:以P‑型硅基底层作为衬底,在其上表面沿垂直方向生长有二氧化钛纳米管阵列,在二氧化钛纳米管阵列的上表面覆盖有绝缘层,绝缘层的面积为二氧化钛纳米管阵列的面积的1/4到1/3;在绝缘层上覆盖有双层或三层氮掺杂石墨烯,双层或三层氮掺杂石墨烯一部分与绝缘层接触,剩余部分覆盖在二氧化钛纳米管阵列上;在双层或三层氮掺杂石墨烯上设置有金属电极层。本发明工艺简单、适合大规模生产,可制备成本低、无污染、且光探测能力强的紫外光电探测器,为石墨烯和氧化锌纳米结构在紫外光电探测器的应用中奠定了基础。
Description
技术领域
本发明涉及一种紫外光电探测器,更具体的说是涉及一种基于纳米材料肖特基结的紫外光电探测器。
背景技术
光电探测器是一种能够将光辐射转换成电量的器件,它利用这个特性可以进行显示及控制的功能。紫外光电探测器是探测紫外光一种器件,它在人们的日常生活甚至军事方面都起了很大的作用。在生活上,它可用于紫外净水处理中的紫外线测量、燃烧工程以及火焰探测等领域,而且在现代医学和生物等领域紫外探测器同样是必不可少的仪器。军事上,紫外探测器同样有着很大作用,紫外探测技术可用于紫外告警、紫外通讯、紫外制导、紫外干扰等领域。所以,很多国家都对紫外探测器进行了大量的研究,以防止在军事上受到威胁。
由于紫外光能量较其他的能量大,于是宽禁带半导体材料氧化锌具有卓越的物理特性和潜在的技术优势,用它们作为器件在高功率、高温、高频和短波长应用方面具有比硅、氮化镓等器件优越的多的特性,使得它们在紫外探测领域有更好的发展前景。但是氧化锌纳米结构的光电探测器受纳米结构表面载流子耗尽层影响从而导致探测速度会变慢。
石墨烯,一种由碳原子组成六角型呈蜂巢晶格的单原子层薄膜是目前最炙手可热的材料之一,由于它具有很多优良的物理性能,例如高导电性、超高迁移率和高透明性,所以石墨烯搭配各种氧化锌纳米结构已成功地制成了高效率的光伏器件、高灵敏度的气体传感器、透明和灵敏的场致发射体以及超级电容器。尽管这些方面有一定的进展,但石墨烯修饰氧化锌纳米结构的紫外光电探测器却没有被研究。。
发明内容
本发明是为避免上述现有技术所存在的不足之处,提供一种成本低、无污染、响应速度快、且光探测能力强的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器。
本发明为解决技术问题采用如下技术方案:
本发明基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特点是:以P-型硅基底层作为衬底,在所述P-型硅基底层的上表面沿垂直方向生长有二氧化钛纳米管阵列,在所述二氧化钛纳米管阵列的上表面覆盖有绝缘层,所述绝缘层的面积为所述二氧化钛纳米管阵列的面积的1/4到1/3,所述绝缘层的边界不超出所述二氧化钛纳米管阵列的边界;在所述绝缘层上覆盖有双层或三层氮掺杂石墨烯,所述双层或三层氮掺杂石墨烯一部分与所述绝缘层接触,剩余部分覆盖在所述二氧化钛纳米管阵列上,所述双层或三层氮掺杂石墨烯的边界不超出所述二氧化钛纳米管阵列的边界;在双层或三层氮掺杂石墨烯上设置有金属电极层,所述金属电极层与所述双层或三层氮掺杂石墨烯呈欧姆接触,所述金属电极层的边界不超出所述绝缘层的边界。
本发明基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特点也在于:所述金属电极层为银浆电极或金浆电极;所述金属电极层的厚度为10~30μm。
所述P-型硅基底层采用电阻率为0.0002~0.001Ω/cm的P-型重掺杂硅片。
所述绝缘层为绝缘胶带。
所述二氧化钛纳米管阵列中各二氧化钛纳米管的直径为200nm~1000nm。
本发明基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器的制备方法,其特点是按如下步骤进行:
a、取电阻率为0.0002~0.001Ω/cm的P-型重掺杂硅片作为P-型硅基底层,在真空管式炉中,在1000℃的温度条件下,以纯度为99.99%~99.999%的氧化锌粉末和纯度为99.9%~99.99%的石墨粉作为原料,在所述P-型硅基底层上制备二氧化钛纳米管阵列,自然冷却至室温后,取出生长有二氧化钛纳米管阵列的P-型硅基底层;
b、用绝缘胶带作为绝缘层粘贴覆盖步骤a生长的二氧化钛纳米管阵列面积的1/4到1/3;
c、在步骤b所制备的绝缘层上铺设双层或三层氮掺杂石墨烯,所述双层或三层氮掺杂石墨烯一部分与所述绝缘层接触,剩余部分覆盖在所述二氧化钛纳米管阵列上,所述双层或三层氮掺杂石墨烯的边界不超出所述二氧化钛纳米管阵列的边界;
d、在双层或三层氮掺杂石墨烯上涂抹金属电极层,所述金属电极层的边界不超出所述绝缘层的边界。
与已有技术相比,本发明有益效果体现在:
1、本发明设计了一种基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,成本低、无污染、光探测能力强,且工艺简单、适合大规模生产,为石墨烯和氧化锌纳米结构在紫外光电探测器领域中的应用奠定了基础;
2、本发明紫外光电探测器引入双层或三层氮掺杂石墨烯替代传统光电探测器中的金属薄层,避免了使用电子束镀膜以及磁控溅射等大型仪器设备,降低了制备成本;
3、本发明充分利用了二氧化钛纳米管阵列结构所具有的大的陷光效应的优势,克服了传统的采用薄膜的光电探测器的反射大缺点,避免了使用减反射层带来的额外成本的增加。
附图说明
图1为本发明基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器的结构示意图。
图中标号:1P-型硅基底层;2二氧化钛纳米管阵列;3绝缘层;4双层或三层氮掺杂石墨烯;5金属电极层。
具体实施方式
实施例1:
参见图1,本实施例基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器具有如下结构:以P-型硅基底层1作为衬底,在P-型硅基底层1的上表面沿垂直方向生长有二氧化钛纳米管阵列2,在二氧化钛纳米管阵列2的上表面覆盖有绝缘层3,绝缘层3的面积为二氧化钛纳米管阵列2的面积的1/4到1/3,绝缘层3的边界不超出二氧化钛纳米管阵列2的边界;在绝缘层3上覆盖有双层或三层氮掺杂石墨烯4,双层或三层氮掺杂石墨烯4一部分与绝缘层3接触,剩余部分覆盖在二氧化钛纳米管阵列2上,双层或三层氮掺杂石墨烯4的边界不超出二氧化钛纳米管阵列2的边界;在双层或三层氮掺杂石墨烯4上设置有金属电极层5,金属电极层5与双层或三层氮掺杂石墨烯4呈欧姆接触,金属电极层5的边界不超出绝缘层3的边界。
本实施例中基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器的制备方法是按如下步骤进行:
a、取电阻率为0.0005Ω/cm的P-型重掺杂硅片作为P-型硅基底层1,在真空管式炉中,在1000℃的温度条件下,以纯度为99.999%的氧化锌粉末和纯度为99.9%的石墨粉作为原料,在P-型硅基底层1上制备二氧化钛纳米管阵列2,自然冷却至室温后,取出生长有二氧化钛纳米管阵列2的P-型硅基底层1;二氧化钛纳米管阵列2中各二氧化钛纳米管的直径为400nm。
选择电阻率小的P-型重掺杂硅片是为了保证其与二氧化钛纳米管阵列形成欧姆接触,电阻率越小效果越好。0.0002~0.001Ω/cm的范围是综合考虑各因素的最优范围。
b、用绝缘胶带作为绝缘层3粘贴覆盖步骤a生长的二氧化钛纳米管阵列2面积的1/4;
c、在步骤b所制备的绝缘层3上铺设双层或三层氮掺杂石墨烯4,双层或三层氮掺杂石墨烯4的面积大于绝缘层3的面积,双层或三层氮掺杂石墨烯4一部分与绝缘层3接触,剩余部分覆盖在所述二氧化钛纳米管阵列2上,双层或三层氮掺杂石墨烯4的边界不超出所述二氧化钛纳米管阵列2的边界;双层或三层氮掺杂石墨烯与二氧化钛纳米管阵列2直接接触形成肖特基结。
d、在双层或三层氮掺杂石墨烯4上涂抹银浆电极,银浆电极的边界不超出绝缘层3的边界,此处也可涂抹金浆电极或其它与双层或三层氮掺杂石墨烯呈欧姆接触的电极作为金属电极层5。
绝缘层3的目的是保证金属电极层5不会透过双层或三层氮掺杂石墨烯4与二氧化钛纳米管阵列2接触,以导致器件失效。
Claims (6)
1.基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特征是:以P-型硅基底层(1)作为衬底,在所述P-型硅基底层(1)的上表面沿垂直方向生长有二氧化钛纳米管阵列(2),在所述二氧化钛纳米管阵列(2)的上表面覆盖有绝缘层(3),所述绝缘层(3)的面积为所述二氧化钛纳米管阵列(2)的面积的1/4到1/3,所述绝缘层(3)的边界不超出所述二氧化钛纳米管阵列(2)的边界;在所述绝缘层(3)上覆盖有双层或三层氮掺杂石墨烯(4),所述双层或三层氮掺杂石墨烯(4)一部分与所述绝缘层(3)接触,剩余部分覆盖在所述二氧化钛纳米管阵列(2)上,所述双层或三层氮掺杂石墨烯(4)的边界不超出所述二氧化钛纳米管阵列(2)的边界;在双层或三层氮掺杂石墨烯(4)上设置有金属电极层(5),所述金属电极层(5)与所述双层或三层氮掺杂石墨烯(4)呈欧姆接触,所述金属电极层(5)的边界不超出所述绝缘层(3)的边界。
2.根据权利要求1所述的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特征是:所述金属电极层(5)为银浆电极或金浆电极;所述金属电极层(5)的厚度为10~30μm。
3.根据权利要求1所述的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特征是:所述P-型硅基底层(1)采用电阻率为0.0002~0.001Ω/cm的P-型重掺杂硅片。
4.根据权利要求1所述的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特征是:所述绝缘层(3)为绝缘胶带。
5.根据权利要求1所述的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器,其特征是:所述二氧化钛纳米管阵列(2)中各二氧化钛纳米管的直径为200nm~1000nm。
6.一种权利要求1所述的基于双层或三层氮掺杂石墨烯/二氧化钛纳米管阵列肖特基结的紫外光电探测器的制备方法,其特征是按如下步骤进行:
a、取电阻率为0.0002~0.001Ω/cm的P-型重掺杂硅片作为P-型硅基底层(1),在真空管式炉中,在1000℃的温度条件下,以纯度为99.99%~99.999%的氧化锌粉末和纯度为99.9%~99.99%的石墨粉作为原料,在所述P-型硅基底层(1)上制备二氧化钛纳米管阵列(2),自然冷却至室温后,取出生长有二氧化钛纳米管阵列(2)的P-型硅基底层(1);
b、用绝缘胶带作为绝缘层(3)粘贴覆盖步骤a生长的二氧化钛纳米管阵列(2)面积的1/4到1/3;
c、在步骤b所制备的绝缘层(3)上铺设双层或三层氮掺杂石墨烯(4),所述双层或三层氮掺杂石墨烯(4)一部分与所述绝缘层(3)接触,剩余部分覆盖在所述二氧化钛纳米管阵列(2)上,所述双层或三层氮掺杂石墨烯(4)的边界不超出所述二氧化钛纳米管阵列(2)的边界;
d、在双层或三层氮掺杂石墨烯(4)上涂抹金属电极层(5),所述金属电极层(5)的边界不超出所述绝缘层(3)的边界。
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