CN106449778A - Photoelectric coupler package structure used for large-scale integration - Google Patents
Photoelectric coupler package structure used for large-scale integration Download PDFInfo
- Publication number
- CN106449778A CN106449778A CN201611008399.3A CN201611008399A CN106449778A CN 106449778 A CN106449778 A CN 106449778A CN 201611008399 A CN201611008399 A CN 201611008399A CN 106449778 A CN106449778 A CN 106449778A
- Authority
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- China
- Prior art keywords
- groove
- lid
- conduction band
- ceramic substrate
- metal conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010354 integration Effects 0.000 title abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims description 7
- 230000004323 axial length Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Disclosed is a photoelectric coupler package structure used for large-scale integration. The photoelectric coupler package structure comprises a ceramic substrate, a lid, a light-emitting diode, a photosensitive chip and multiple metal conduction bands. The photoelectric coupler package structure used for large-scale integration has the advantages that the photoelectric coupler package structure used for the large-scale integration is provided. According to the technical scheme, only a simple non-airtight packaging is conducted on the photoelectric coupler unit, and an overall airtight packaging is conducted on the photoelectric coupler unit and other elements; meanwhile, thanks to the reduction of dimension of the photoelectric coupler unit, a total volume of a device after the large-scale integration can be sharply reduced.
Description
Technical field
The present invention relates to a kind of photoelectrical coupler encapsulation technology, more particularly, to a kind of photoelectric coupling for large-scale integrated
Device encapsulating structure.
Background technology
Photoelectrical coupler is a kind of common photoelectric device, prior art make photoelectrical coupler when, typically to photoelectricity
Bonder carries out independent level Hermetic Package, and for ensureing air-tightness, the ceramic shell for level Hermetic Package must is fulfilled for certain thickness
Degree requires, if continuing the size of reduction ceramic shell, is difficult to ensure that the air-tightness of encapsulation, and reduces with volume, device
The operation easier of assembling also can accordingly improve；There is problems that：By integration packaging housing by the photoelectricity of aforementioned level Hermetic Package
When bonder and other circuit units carry out integration packaging, each element is all distributed in one plane, due to photoelectrical coupler
Level Hermetic Package structure size larger（The size of other elements is all relatively small）, lead to the size of integrated encapsulation structure to be difficult to
Reduce further, this not only makes to exist substantial amounts of structural redundancy on device, and leads to the overall dimensions of integration packaging all relatively
Greatly, it is unfavorable for the application of device.
Content of the invention
For the problem in background technology, the present invention proposes a kind of encapsulation knot of the photoelectrical coupler for large-scale integrated
Structure, its innovation is：Described photoelectrical coupler encapsulating structure is by ceramic substrate, lid, light emitting diode, photosensor chip and a plurality of
Metal conduction band forms；Described ceramic substrate is cube shaped, and ceramic substrate upper surface is provided with the groove of rectangular cross-section, institute
Stating groove is groove, and the axial direction of groove is parallel with described cube shaped length direction；It is provided with the middle part of the bottom surface of described groove
Mounting groove, the width of mounting groove is identical with groove, and the groove floor beyond mounting groove forms joint face；Described photosensor chip setting
Trench bottom is being installed；Described lid is plate-like structure, and the axial length of lid is mated with the axial length of groove, the width of lid
Degree is arranged in groove less than the width of groove, lid, and the lower surface of lid is bondd with described joint face；Described light emitting diode
It is arranged on the lower surface of lid, the position of light emitting diode is relative with photosensor chip；Described metal conduction band is arranged on ceramic base
The surface of plate, the inner of metal conduction band extends in mounting groove, and the outer end of metal conduction band extends to ceramic substrate upper surface, each bar
Metal conduction band is separate, and the electric terminal of light emitting diode and photosensor chip is outwards drawn by a plurality of metal conduction band respectively.
The principle of the present invention is：It is not difficult to find out from foregoing description, because the width of lid is less than the width of groove, lid
When being arranged in groove, it is only capable of covering installing slot part, mounting groove is not completely sealed, and why adopts such structure,
Its purpose has three, first, lid is not intended as the covering sealing, but is only used as a support member and is used for arranging light-emitting diodes
Pipe, second, for photoelectrical coupler unit, airtight effect has not been needed by the shell that ceramic substrate and lid are formed,
During follow-up integration packaging, then photoelectrical coupler and other elements are carried out by level Hermetic Package by the housing of integration packaging, therefore may be used
To reduce the thickness of ceramic substrate and lid further, so that the size of photoelectrical coupler unit also accordingly reduces,
The cumulative volume making the device after large-scale integrated eventually is reduced, thus reducing structural redundancy, reducing integrating device to installation
The requirement in space, third, due to not needing photoelectrical coupler unit is carried out level Hermetic Package, the structure of ceramic substrate and lid
Relatively easy, process and assembling also relatively convenient, even if the small volume of photoelectrical coupler unit, operation is also very convenient.
The method have the benefit that：Propose a kind of photoelectrical coupler encapsulating structure for large-scale integrated,
The program only makees simple non-airtight encapsulation for photoelectrical coupler unit, then again by photoelectrical coupler unit and other yuan
Part integrally carries out level Hermetic Package, has benefited from the size reduction of photoelectrical coupler unit, the device cumulative volume after large-scale integrated can
Significantly to be reduced.
Brief description
Fig. 1, photoelectrical coupler cellular construction schematic diagram；
Fig. 2, photoelectrical coupler unit section structure schematic diagram；
Fig. 3, ceramic substrate structure schematic diagram；
Title corresponding to each labelling of in figure is respectively：Ceramic substrate 1, lid 2, light emitting diode 3, photosensor chip 4, metal
Conduction band 5.
Specific embodiment
A kind of photoelectrical coupler encapsulating structure for large-scale integrated, its innovation is：Described photoelectrical coupler encapsulation
Structure is made up of ceramic substrate 1, lid 2, light emitting diode 3, photosensor chip 4 and a plurality of metal conduction band；Described ceramic substrate 1 is
Cube shaped, ceramic substrate 1 upper surface is provided with the groove of rectangular cross-section, described groove be groove, the axial direction of groove with
Described cube shaped length direction is parallel；It is provided with mounting groove, the width of mounting groove and groove in the middle part of the bottom surface of described groove
Identical, the groove floor beyond mounting groove forms joint face；Described photosensor chip 4 is arranged on installation trench bottom；Described lid 2 is
Plate-like structure, the axial length of lid 2 is mated with the axial length of groove, and the width of lid 2 is less than the width of groove, lid
2 are arranged in groove, and the lower surface of lid 2 is bondd with described joint face；Described light emitting diode 3 is arranged on the lower end of lid 2
On face, the position of light emitting diode 3 is relative with photosensor chip 4；Described metal conduction band is arranged on the surface of ceramic substrate 1, metal
The inner of conduction band extends in mounting groove, and the outer end of metal conduction band extends to ceramic substrate 1 upper surface, and each bar metal conduction band is mutual
Independent, the electric terminal of light emitting diode 3 and photosensor chip 4 is outwards drawn by a plurality of metal conduction band respectively.
Claims (1)
1. a kind of photoelectrical coupler encapsulating structure for large-scale integrated it is characterised in that：Described photoelectrical coupler encapsulation knot
Structure is by ceramic substrate（1）, lid（2）, light emitting diode（3）, photosensor chip（4）With a plurality of metal conduction band composition；Described pottery
Substrate（1）For cube shaped, ceramic substrate（1）The groove of rectangular cross-section is provided with upper surface, described groove is groove, recessed
The axial direction of groove is parallel with described cube shaped length direction；It is provided with mounting groove in the middle part of the bottom surface of described groove, mounting groove
Width is identical with groove, and the groove floor beyond mounting groove forms joint face；Described photosensor chip（4）It is arranged on mounting groove bottom
Portion；Described lid（2）For plate-like structure, lid（2）Axial length mate with the axial length of groove, lid（2）Width
Degree is less than the width of groove, lid（2）It is arranged in groove, lid（2）Lower surface and described joint face bonding；Described luminous
Diode（3）It is arranged on lid（2）Lower surface on, light emitting diode（3）Position and photosensor chip（4）Relatively；Described gold
Belong to conduction band and be arranged on ceramic substrate（1）Surface, the inner of metal conduction band extends in mounting groove, and the outer end of metal conduction band extends
To ceramic substrate（1）Upper surface, each bar metal conduction band is separate, light emitting diode（3）And photosensor chip（4）Electric terminal
Outwards drawn by a plurality of metal conduction band respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611008399.3A CN106449778B (en) | 2016-11-16 | 2016-11-16 | Photoelectrical coupler encapsulating structure for large-scale integrated |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611008399.3A CN106449778B (en) | 2016-11-16 | 2016-11-16 | Photoelectrical coupler encapsulating structure for large-scale integrated |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449778A true CN106449778A (en) | 2017-02-22 |
| CN106449778B CN106449778B (en) | 2017-08-11 |
Family
ID=58208667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611008399.3A Active CN106449778B (en) | 2016-11-16 | 2016-11-16 | Photoelectrical coupler encapsulating structure for large-scale integrated |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449778B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346534A (en) * | 2018-11-23 | 2019-02-15 | 中国电子科技集团公司第四十四研究所 | A kind of ceramic cartridge structure and its encapsulating structure |
| CN112466788A (en) * | 2020-11-25 | 2021-03-09 | 中国电子科技集团公司第四十四研究所 | Filling and sealing clamp device for photoelectric coupler and using method thereof |
| CN113922207A (en) * | 2021-10-08 | 2022-01-11 | 中国电子科技集团公司第四十四研究所 | High-speed high-precision linear optocoupler based on quantum dot laser and InGaAs detector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
| CN101794004A (en) * | 2010-03-05 | 2010-08-04 | 中国电子科技集团公司第十三研究所 | Lens coupling photocoupler |
| CN205282483U (en) * | 2015-11-05 | 2016-06-01 | 中国地质调查局南京地质调查中心 | Photoelectric sensor encapsulation |
-
2016
- 2016-11-16 CN CN201611008399.3A patent/CN106449778B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
| CN101794004A (en) * | 2010-03-05 | 2010-08-04 | 中国电子科技集团公司第十三研究所 | Lens coupling photocoupler |
| CN205282483U (en) * | 2015-11-05 | 2016-06-01 | 中国地质调查局南京地质调查中心 | Photoelectric sensor encapsulation |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346534A (en) * | 2018-11-23 | 2019-02-15 | 中国电子科技集团公司第四十四研究所 | A kind of ceramic cartridge structure and its encapsulating structure |
| CN109346534B (en) * | 2018-11-23 | 2024-05-07 | 中国电子科技集团公司第四十四研究所 | Ceramic tube shell structure and packaging structure thereof |
| CN112466788A (en) * | 2020-11-25 | 2021-03-09 | 中国电子科技集团公司第四十四研究所 | Filling and sealing clamp device for photoelectric coupler and using method thereof |
| CN112466788B (en) * | 2020-11-25 | 2022-08-26 | 中国电子科技集团公司第四十四研究所 | Filling and sealing clamp device for photoelectric coupler and using method thereof |
| CN113922207A (en) * | 2021-10-08 | 2022-01-11 | 中国电子科技集团公司第四十四研究所 | High-speed high-precision linear optocoupler based on quantum dot laser and InGaAs detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106449778B (en) | 2017-08-11 |
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