CN106449618A - Lamp housing integrated type light emitting diode apparatus and its manufacturing method - Google Patents
Lamp housing integrated type light emitting diode apparatus and its manufacturing method Download PDFInfo
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- CN106449618A CN106449618A CN201610065048.XA CN201610065048A CN106449618A CN 106449618 A CN106449618 A CN 106449618A CN 201610065048 A CN201610065048 A CN 201610065048A CN 106449618 A CN106449618 A CN 106449618A
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- luminescence unit
- light emitting
- emitting diode
- encapsulating
- lamp housing
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a lamp housing integrated type light emitting diode apparatus which comprises a plurality of light emitting units. Each contains at least one light emitting unit coupled with external conductive wires. The invention also comprises a packaging housing which is made from a packaging material to have the light emitting units packaged therein. The light emitting units emit light externally in a direct manner through the package material. The packaging housing is a solidified structure formed by the packaging material.
Description
Technical field
The present invention is related to a kind of lamp housing integrated light emitting diode, especially system be related to one kind can 360 degree, from all directions
The lamp housing integrated light emitting diode comprehensively lighting with light radiation radiating.
Background technology
Light emitting diode (LED) is higher than the Halogen light of tradition or vehement smooth lamp because of luminous efficiency and life-span, for illumination development
Emphasis direction.The light-emitting diode chip for backlight unit of tradition encapsulates (COB using direct;Chip on board) technology, by light-emitting diodes
Die is fixed on aluminum, PCB or ceramic substrate, therefore has the luminous puzzlement low with luminous efficiency of one side.Another kind of luminous two
The conventional packaging techniques system of pole pipe chip on glass substrate (Chip on glass) by chip package, though light-emitting diodes tube core
Piece luminous efficiency improves, but the radiating efficiency of glass substrate is good, production yield is low and glass substrate both sides go out light color temperature not
With so it is still to be improved to plant light-emitting diode chip for backlight unit technology.
Refer to Fig. 1, be a kind of light emitting diode (LED) light fixture 10 of tradition of display.LED lamp 10 comprises with traditional skill
LED luminescence chip 11 and the lamp housing (also known as lampshade) 12 of art encapsulation, has an interval empty between LED luminescence chip 11 and lamp housing 12
Between 121.The light that LED luminescence chip 11 is sent, need to through clearance space 121 and lampshade 12, could to outgoing light, this kind of go out
Light path, lead to lampshade 12 outer take light rate relatively low.Additionally, because of the distance of lampshade 12 and its inner space 121, leading to send out
The radiating effect of the external radiating of light unit 11 is not good, therefore, also needs in addition to arrange and is connected to the heat sink of luminescence unit 11 and (does not show
Show) to increase radiating efficiency.
Therefore, how to provide that a design is simple, production yield is high, good heat dissipation effect and take the high light fixture of light rate, attach most importance to
The key wanted.
Content of the invention
Technical problem underlying to be solved by this invention provides that a design is simple, production yield is high, good heat dissipation effect and
Take the high light fixture of light rate.
In order to solve above-mentioned technical problem, the invention provides a kind of lamp housing integrated light emitting diode, including:
At least one luminescence unit, to have at least one luminescence unit piece external be coupled to this luminescence unit piece at least one to lead
Line;And
One encapsulating housing, this encapsulating housing is formed by an encapsulating material, to coat this at least one luminescence unit in this
In encapsulating material, the spectrum that this luminescence unit is sent passes through this encapsulating material, thus the directly outside for this encapsulating housing
Go out light;
Wherein, the structure of the one solidification that this this encapsulating material of encapsulating shell system is formed.
In a preferred embodiment:This luminescence unit piece is a light emitting diode piece;
Respectively this luminescence unit piece has a fluorescence resin substrate, an encapsulation unit and a plurality of inner lead again;Wherein should
Luminescence unit piece system is arranged on this fluorescence resin substrate, and this fluorescence resin substrate coats this luminous list with this encapsulation unit system
First piece;
This encapsulation unit comprises curing materials, and this curing materials comprises one first nm heat conduction material and one first fluorescence
Material, to coat this luminescence unit piece, spectrum that this luminescence unit piece is sent via this curing materials and this fluorescence resin substrate,
With for respectively this luminescence unit piece outside carry out light, and this inner lead in this luminescence unit wherein same couple same
This at least one luminescence unit piece in this luminescence unit.
In a preferred embodiment:This luminescence unit comprises a plurality of light emitting diodes, when this luminescence unit same
When inside respectively this light emitting diode piece forms electrical series by this inner lead, respectively shape between the external wire of this luminescence unit
Become an electrical parallel connection;Or when in this luminescence unit same respectively this light emitting diode piece formed electrically simultaneously by this inner lead
During connection, respectively form electrical series between the external wire of this luminescence unit.
In a preferred embodiment:This encapsulating material comprises one second nm heat conduction material, and wherein this luminescence unit is sent
Spectrum via this encapsulating material, to carry out light for the outside of this encapsulating housing.
In a preferred embodiment:This second nm heat conduction material ratio in this encapsulating material is between 5% to 70%.
In a preferred embodiment:This encapsulating material comprises one second phosphor again, and wherein this luminescence unit is sent
Spectrum, via this encapsulating material, carries out light with outside for this encapsulating housing.
In a preferred embodiment:Respectively one end of this external wire is coupled to this at least one luminescence unit, this external wire
The other end expose to one of this encapsulating housing bottom side.
In a preferred embodiment:This first nm heat conduction material or this second nm heat conduction material comprise a plurality of nm heat conduction
Particle, the chi footpath of this nm conductive particle is less than 50 nm, and wherein this nm conductive particle comprises a plurality of metallics, plural number
The combination of individual metal oxide particle, a plurality of ceramic particle and a plurality of carbon systems particle or one of them.
In a preferred embodiment:This first phosphor or this second phosphor comprise a yellow fluorescence material, and selectivity
Comprise red fluorescence material, green fluorescence material or orange phosphor, the wherein material of phosphor is aluminate-series fluorescent material, silicon
The combination of phosphate-gallate series fluorescent material, nitride fluorescent material and nitrogen oxides system fluorescent material or one of them.
In a preferred embodiment:This encapsulating material or the composition of this curing materials, comprise epoxy resin, bisphenol-A system again
Epoxy resin, cycloaliphatic epoxy resins, polysiloxanes modification epoxy resin, polyacids methyl ester modification epoxy resin, Organic modification ring
Oxygen tree fat, silica resin, Silica hydrogel, the combination of silicone rubber, polyorganosiloxane resin and Organic modification polyorganosiloxane resin or wherein
One of.
In a preferred embodiment:A length of below the 500nm of light wave that this luminescence unit is sent, this luminescence unit includes indigo plant
Light-emitting diode crystal grain or purple-light LED crystal grain.
In a preferred embodiment:The surface of this encapsulating housing is coated with a grapheme material.
Present invention also offers a kind of lamp housing integrated light emitting diode device, comprise:
One lamp housing integrated light emitting diode, has an encapsulating housing, inserts an encapsulating material in this encapsulating housing, to wrap
Cover a plurality of luminescence units in this encapsulating material, wherein respectively this luminescence unit has at least one luminescence unit piece and is coupled to this
One of luminescence unit piece external wire, the spectrum that this luminescence unit is sent pass through this encapsulating material, with to this encapsulating housing it
Outside directly goes out light;And
One lamp socket, comprises a joint portion and a power source connecting unit, wherein this joint portion is in order to integrated with reference to this lamp housing
Light emitting diode and this lamp socket, this power source connecting unit couples an external power source;
Wherein, this encapsulating shell system is by the structure of the filled up one solidification being formed of this encapsulating material.
In a preferred embodiment:This encapsulating material comprises a nm heat conduction material, the light that wherein this luminescence unit is sent
This encapsulating material passes through in system, carries out light with outside to this encapsulating housing.
In a preferred embodiment:This nm heat conduction material comprises a plurality of nm conductive particle, this nm conductive particle
Chi footpath is less than 50 nm, and wherein this nm conductive particle comprises a plurality of metallics, a plurality of metal oxide particle, plural number
The combination of individual ceramic particle and a plurality of carbon systems particle or one of them.
In a preferred embodiment:This encapsulating material comprise epoxy resin (, bisphenol-A system epoxy resin, cycloaliphatic epoxy tree
Fat, polysiloxanes modification epoxy resin, polyacids methyl ester modification epoxy resin, Organic modification epoxy resin, silica resin, silicon coagulate
Glue, the combination of silicone rubber, polyorganosiloxane resin and Organic modification polyorganosiloxane resin or one of them.
In a preferred embodiment:A length of below the 500nm of light wave that this luminescence unit is sent, this luminescence unit includes indigo plant
Light-emitting diode crystal grain or purple-light LED crystal grain.
In a preferred embodiment:Respectively this luminescence unit has this luminescence unit piece a plurality of, and this luminescence unit piece is multiple
Several light emitting diodes, when in this luminescence unit same respectively this luminescence unit piece by this inner lead formed electrical series
When, respectively form an electrical parallel connection between the external wire of this luminescence unit;Or when each this luminescence unit piece in this luminescence unit same
When forming electrically parallel connection by this inner lead, respectively form electrical series between the external wire of this luminescence unit.
In a preferred embodiment:Comprise one drive circuit again, be coupled to the external wire of this luminescence unit, this driving electricity
An external power source is changed into a driving signal in road, goes out light with control this luminescence unit.
Present invention also offers a kind of manufacture method of lamp housing integrated light emitting diode, comprise:
There is provided a plurality of luminescence units, respectively this luminescence unit has outside a luminescence unit and be coupled to this luminescence unit
Connect wire;
There is provided a molding, this shaping mould has corresponding to one of encapsulating housing cavity;
This luminescence unit is arranged at the specific correspondence position in this cavity;
There is provided an encapsulating material, this encapsulating material comprises curable epoxy glue, mixed light of fluorescent powder material, a plurality of
Nm conductive particle;
This encapsulating material is inserted and riddles in this cavity comprising this luminescence unit, to coat being somebody's turn to do of this luminescence unit
Luminescence unit simultaneously forms this encapsulating housing, and wherein, the spectrum that this luminescence unit is sent passes through this encapsulating material and this nm
Conductive particle, goes out light with outside to this encapsulating housing.
In a preferred embodiment:The chi footpath of this nm conductive particle is less than 50 nm, wherein this nm conductive particle, bag
Combination containing a plurality of metallics, a plurality of metal oxide particle, a plurality of ceramic particle and a plurality of carbon systems particle
Or one of them.
In a preferred embodiment:This encapsulating material comprises epoxy resin, bisphenol-A system epoxy resin, cycloaliphatic epoxy again
Resin, polysiloxanes modification epoxy resin, polyacids methyl ester modification epoxy resin, Organic modification epoxy resin, silica resin, silicon coagulate
Glue, the combination of silicone rubber, polyorganosiloxane resin and Organic modification polyorganosiloxane resin or one of them.
Compared to prior art, technical scheme possesses following beneficial effect:
The present invention integrates encapsulation weight-light ligh-emitting diode unit by the mode of one solidification so that lighting lamp housing and lighting
Diodes are integrated, that is, luminous lamp housing plays the part of the role of white light emitting diode, and white light emitting diode is played the part of
The role of luminous lamp housing.Or, heat-radiating substrate plays the part of the role of resin lamp housing, and lamp housing is also the role playing the part of heat-radiating substrate, dissipates
Hot substrate is integrated with both lamp housings.
A kind of lamp housing integrated light emitting diode that the present invention provides, can by light emitting diode, epoxy resin (for example but not
Be limited to), fluorescent material, nm level radiating powder etc., you can fully integrated be combined into lamp housing integrated light emitting diode.And because using ring
The materials such as oxygen silicones, therefore have the advantages that acid and alkali-resistance, dust-proof, antirust, abrasion performance, resistant to pressure and water proofing property are high.
Additionally, a kind of lamp housing integrated light emitting diode that the present invention provides, because directly to outgoing light, the big sky of directly contact
Between environment, no radiate heat shield, and therefore thermal diffusivity is splendid, no common LED center heating, and heat can accumulate in bulb housing model
The shortcomings of enclose interior.Produce heat can directly by integrated lamp housing surface emissivity in the air, that is, can be by lamp housing integrated light emitting
Resin bed in diode directly conducts or radiates in the air.Again because homogeneity one fluorescence composite resin integrates molding, so
Light color temperature uniform no shadow, dark area effect.
The present invention, directly to outgoing light, can arrive the purpose of real 360 degree comprehensive light from all directions, and luminous flux
High, light efficiency is high, scattered and good, Cheng Yi, and raw yield speed is substantially improved.
Also, a kind of lamp housing integrated light emitting diode of providing of the present invention is because omitting the structure such as lamp housing, not only low cost, and
Mixed light of fluorescent powder no shielding, therefore aobvious index is up to the effect of more than 95 class sunlights.And the present invention is applied to various Gao Gong
Rate saving energy for illumination bulb, and because need not additional one layer of lampshade/lamp housing, applicable any shape illuminating lamp.
Brief description
Fig. 1 is the structure chart of light-emitting diode assembly in prior art;
Fig. 2 is the Structure explosion diagram of encapsulating housing and luminescence unit in the preferred embodiment of the present invention;
Fig. 3 is the assembling schematic diagram of encapsulating housing and luminescence unit in the preferred embodiment of the present invention;
Fig. 4 is the side view of encapsulating housing in the preferred embodiment of the present invention;
Fig. 5 is the sectional view at encapsulating housing A-A in the preferred embodiment of the present invention;
Fig. 6 is the partial enlarged drawing of Fig. 5;
Fig. 7 is the sectional view of luminescence unit in the preferred embodiment of the present invention;
Fig. 8 is the schematic diagram of lamp housing integrated light emitting diode device in the preferred embodiment of the present invention;
Fig. 9 is the manufacture method flow chart of lamp housing integrated light emitting diode in the preferred embodiment of the present invention.
Specific embodiment
About addressing other technologies content, feature and effect before the present invention, preferable in following cooperation refer to the attached drawing and one
In the detailed description of embodiment, can clearly present.
Reference picture 2-6, each angle of the lamp housing integrated light emitting diode 21 that one of display present invention viewpoint is provided.This
Invention lamp housing integrated light emitting diode 21, comprises:A plurality of luminescence units 212, are respectively provided with least one luminescence unit piece
2121 with the external wire 2122 being coupled to luminescence unit piece 2121;And encapsulating housing 211, encapsulating housing 211 is by an envelope
Package material 2111 is formed, and to coat luminescence unit 212 and luminescence unit piece 2121 wherein in encapsulating material 2111, sends out
Light unit piece 2121 passes through encapsulating material 2111, goes out light with outside to encapsulating housing 211;Wherein, encapsulating housing 211 is encapsulation
The structure of the one solidification that material 2111 is formed.With reference to 2A figure, the external wire 2122 of each luminescence unit 212 can comprise but
It is not limited to two conducting brackets (in schema, two protrude part for two described conducting brackets).
Additionally, the lamp housing integrated light emitting diode 21 that encapsulating housing 211 and luminescence unit piece 2121 are formed, wherein carefully
Section, refers in follow-up explanation.The advantage of the present invention, the heat being produced by luminescence unit piece 2121, can by luminescence unit 212 it
Encapsulating material and the directly contact of encapsulating material 2111, are directly radiated to air or context by conduction of heat and heat radiation mode
In, therefore radiating efficiency is far above known techniques.
Additionally, by the encapsulating material of luminescence unit 212 and the directly contact of encapsulating material 2111, lamp housing integrated light emitting
Diode 21 is externally directly to go out light, will not be detracted by the lampshade of known techniques or lamp housing, and therefore external light-out effect is also
Better than known techniques.Also, because of the light path that goes out of luminescence unit piece 2121, not through multiple different refractivity materials as prior art
The path of matter and process, the present invention goes out light path only via same similar material, and goes out light path and be shorter than prior art, therefore right
Outer light-out effect is splendid.
With reference to Fig. 6, according to an embodiment, encapsulating material 2111 can comprise one first nm heat conduction material 21111, to lift envelope
The radiating efficiency of package material 2111.Ratio in encapsulating material 2111 for the wherein first nm heat conduction material 21111 between 5% to
Between 70%, the first nm heat conduction material 21111 comprises a plurality of nm conductive particle, and its chi footpath is less than 50 nm (nm), to drop
Low scattering of light etc. is on the impact going out light.With reference to following table 1, wherein show for example when the first nm heat conduction material 21111 is in encapsulation
From 0% to 70%, the transmittance impact on encapsulating housing 211 is limited (for example for part by weight (wt%) in material 2111:Only from
94.2% drops to 89.1%), but the pyroconductivity of encapsulating housing 211 increases a lot (for example:Bring up to 0.57W/ from 0.16W/mk
mk).Therefore, after the encapsulating material 2111 of the present invention adds the first nm heat conduction material 21111, the pyroconductivity of encapsulating material 2111
Lifting reaches as many as four times, but transmittance only reduced for about 5% (comprising 70% the first nm heat conduction material in encapsulating material 2111).
Nm heat conduction material (wt%) | 0 | 30 | 50 | 70 |
Transmittance (%) | 94.2 | 91.8 | 90.6 | 89.1 |
Pyroconductivity (W/mk) | 0.16 | 0.26 | 0.42 | 0.57 |
Table 1
With continued reference to Fig. 6, according to an embodiment, encapsulating material 2111 can comprise one first phosphor 21112 again, wherein send out
, via in encapsulating housing 211, the encapsulating material 2111 of distribution the first phosphor 21112, externally to be gone out for light unit piece 2121
Light.First phosphor 21112 according to the light characteristic that goes out of luminescence unit piece 2121, can select the material of difference, for example, go out light and drill color
Adjustment of property etc..The material of the first phosphor 21112 can comprise:Red fluorescence material, green fluorescence material or orange phosphor, its
The material of middle phosphor is aluminate-series fluorescent material (Aluminate), silicate fluorescent material (Silicate), nitride
Be the combination of fluorescent material (Nitride) and nitrogen oxides system fluorescent material (Oxynitride) or one of them.
Additionally, as shown in fig. 7, each luminescence unit 212 can have at least one luminescence unit piece 2121, or have a plurality of
Luminescence unit piece 2121, so purpose of the quantity of its luminescence unit piece 2121 only signal, and unrestricted each luminescence unit 212 institute
There is the quantity of luminescence unit piece 2121.For example, each luminescence unit 212 also can have a luminescence unit piece 2121, or each
Light unit 212 has 20 luminescence unit pieces 2121 grade it is preferred that selecting with the luminescence unit between ten to 20
Piece 2121 quantity.According to the 3rd figure, one end of external wire 2122 is coupled at least one luminescence unit piece 2121, external wire
2122 other end exposes to one of encapsulating housing 211 bottom side 213.
Should be noted to be, the external form of lamp housing integrated light emitting diode 21 is not only restricted to shown external form in schema, can
Depending on user need and make any change, if meet disclosed herein lamp housing integrated light emitting diode technical scope
Interior, the external form of its lamp housing integrated light emitting diode comes under in the range of the opinion of the present invention.
With reference to Fig. 6, in an embodiment, luminescence unit piece 2121 is preferably lamellar light emitting diode (LED) unit or piece
Shape white light emitting diode (LED) unit, and each luminescence unit 212 have fluorescence resin substrate 2124, encapsulation unit 2123,
With a plurality of inner leads 2125, wherein luminescence unit piece 2121 is to be arranged on fluorescence resin substrate 2124, and fluorescence resin
Substrate 2124 coats luminescence unit piece 2121 with encapsulation unit 2123, and encapsulation unit 2123 comprises curing materials 21231, solidifies material
Material 21231 comprises the second nm heat conduction material 212311 and the second phosphor 212312, and to coat LED unit piece 2121, LED is mono-
First piece 2121 via the second nm heat conduction material 212311 and the second phosphor 212312 curing materials 21231 (as the 3rd figure institute
Show), carry out light with outside to each luminescence unit 212.Also, the inner lead 2125 of wherein same luminescence unit 212 couples
The LED unit 2121 of same luminescence unit.Should be noted to be, the lamp housing integrated light emitting diode 21 of the present invention is can 360 degree
Omnibearing luminous from all directions, material used must possess light-transmissive or transparent, translucent property.For example, on
The first nm heat conduction material 21111 or the second nm heat conduction material 212311 stated are it is preferred that with transparent with machine or inorganic nm
Powder/particle, and metal powder/particle must not be used.
Reference picture 5-6, luminescence unit piece 2121 of the present invention is integrated and is solidified on lamp housing integrated light emitting diode 21, can
Offer is equal to the function of bulb, therefore the technology of the present invention can be described as light emitting diode (LED) chip and is embedded in (Chip in bulb
In lamp) unique technology.
Refer to Fig. 7, the profile of luminescence unit 212 in display one embodiment, wherein luminescence unit 212 comprise a plurality of
Luminescence unit piece 2121, when luminescence unit piece 2121 each in same luminescence unit 212 forms electrical string by inner lead 2125
Connection, forms an electrical parallel connection (the 8th figure) between the external wire 2122 of each luminescence unit 212;Or when each in same luminescence unit 212
LED unit 2121 forms electrical parallel connection by inner lead 2125, forms an electricity between the external wire 2122 of each luminescence unit 212
Property series connection (the 4th figure).The coupling mode of this series/parallel, when wherein luminescence unit piece 2121 can be avoided to occur damaging, lamp housing is integrated
In type light emitting diode 21 other luminescence unit pieces 2121 still can normal operating, keep lamp housing integrated light emitting diode of the present invention
21 stability.
In one embodiment, similar to the first aforementioned phosphor 21112, the material of the second phosphor 212312, can comprise
One yellow fluorescence material, and selectivity comprises red fluorescence material, green fluorescence material or orange phosphor, the wherein material of phosphor
For aluminate-series fluorescent material (Aluminate), silicate fluorescent material (Silicate), nitride fluorescent material
(Nitride) and the combination of nitrogen oxides system fluorescent material (Oxynitride) or one of them.Wherein different phosphor it
Selection can drill color demand according to coloured light, or goes out light characteristic according to luminescence unit piece 2121.
In one embodiment, the first aforementioned nm heat conduction material 21111 or the second nm heat conduction material 212311 comprise a plurality of
Nm conductive particle, the chi footpath of nm conductive particle is less than 50 nm (nm), wherein nm conductive particle, comprises a plurality of metals
Particle, the combination of a plurality of metal oxide particle, a plurality of ceramic particle and a plurality of carbon systems particle or one of them.
As it was previously stated, the lamp housing integrated light emitting diode 21 of the present invention is can 360 degree of omnibearing luminous from all directions, used materials
Palpus light-permeable or transparent, therefore, the chi footpath of aforementioned nm conductive particle limits, and is in order to avoid producing shaded effect, causing
The light transmittance of encapsulating material 2111 or curing materials 21231 excessively reduces, and makes the external light extraction efficiency of luminescence unit piece 2121 slightly
Edge down low.Aforementioned metallic can comprise copper particle, silver particles or aluminum particulate.Aforementioned metal oxide particle can comprise
Aluminium oxide particles or zinc oxide particles.Aforementioned ceramic particle can comprise boron nitride particles, aluminum nitride particle, carborundum particle,
Or nm potter's clay particle.Aforementioned carbon system particle can comprise graphite particle, carbon fibre particle or nm carbon particle.
In one embodiment, the composition of aforementioned encapsulating material 2111 or curing materials, comprise again epoxy resin (Epoxy),
Bisphenol-A system epoxy resin (Bisphenol A Epoxy), cycloaliphatic epoxy resins (Cycloaliphatic-Epoxy), poly- silicon
Oxygen alkane modification epoxy resin (Siloxane Modified Epoxy Resin), polyacids methyl ester modification epoxy resin (Acrylic
Modified Epoxy Resin), Organic modification epoxy resin (Organic Modified Epoxy Resin), silica resin
(Silicone), Silica hydrogel (Silicone Gel), silicone rubber (Silicone Rubber), polyorganosiloxane resin (Silicone
Resin) and Organic modification polyorganosiloxane resin (Organic Modified Silicone Resin) combination or wherein it
One.
In one embodiment, user can be according to resin ratio in lamp housing integrated light emitting diode 21 or luminescence unit 212
(percentage ratio %), thickness (micron um) and heat conduction material ratio (percentage ratio %) are determining lamp housing integrated light emitting diode 21
Or the temperature design of luminescence unit 212 or brightness design.
Certainly, user also can determine lamp housing integrated light emitting diode 21 or to send out according to required temperature or brightness
Resin ratio, thickness and heat conduction material ratio in light unit 212.
From the foregoing, it will be observed that the lamp housing integrated light emitting diode 21 of the present invention does not need the lampshade of prior art, and go out light efficiency
Rate be better than prior art, lamp housing integrated light emitting diode 21 go out light/input power ratio, can for example between 150lm/W (stream
Bright) to 200lm/W (lumen), or another efficiency (for example reaching more than 300200lm/W) more preferably.Additionally, the lamp housing of the present invention is whole
Mould assembly light emitting diode 21 and the design of luminescence unit 212, all have the effect that 360 ° of ring fields go out light, can veritably from all directions
Omnibearing luminous, rather than have most rising angle to be limited to by light tight substrate or reflecting layer as known.More enter
One step, the lamp housing integrated light emitting diode 21 of the present invention and luminescence unit 212 can directly by heat by being radiated to external environment condition,
Therefore there is splendid radiating effect, service life can be substantially improved.
In one embodiment, the surface of encapsulating housing 211 is coated with a grapheme material (not shown), and this coating can increase encapsulation
The radiating of housing 211 and light extraction efficiency.
With reference to Fig. 6 and Fig. 8, with regard to another viewpoint, the present invention provides a kind of lamp housing integrated light emitting diode device 20, its
Cording has the function of general light-emitting lamp, comprises:Lamp housing integrated light emitting diode 21 (as shown in Figure 4), it has an envelope
Dress housing 211, encapsulating housing 211 formed by encapsulating material 2111, to coat a plurality of luminescence unit piece 2121 in encapsulation
In material 2111, wherein each luminescence unit 212 (as illustrated in fig. 2b) have at least luminescence unit piece 2121 be coupled to luminous
The external wire 2122 of dice 2121, the light that luminescence unit piece 2121 is sent can pass through this encapsulating material 2111, and to envelope
The outside of dress housing 211 goes out light;And lamp socket 22, comprise joint portion 221 and power source connecting unit 222, wherein joint portion 221 is used
To link lamp housing integrated light emitting diode 21, power source connecting unit 222 couples an external power source (not shown).Encapsulation wherein
Housing 211 is the structure of the one solidification that encapsulating material 2111 is formed.Additionally, the power source connecting unit 222 that the 4th in figure shows
For a sped structure, not limited to this, alternatively plug in construction when so implementing, because the structure of power source connecting unit 222 is to practise
Know technology, be fixed in this and do not repeat.
With reference to Fig. 8, lamp housing integrated light emitting diode device 20 comprises one drive circuit 23 again, is coupled to luminescence unit
Wire connecting portion 2122 outside 212, drive circuit 23 changes exterior power supply into a driving signal D, to control going out of luminescence unit 212
Light.
With reference to Fig. 9, with regard to another viewpoint, the present invention provides a kind of manufacture method of lamp housing integrated light emitting diode, bag
Contain:Step S1:There is provided a plurality of luminescence units, each luminescence unit has at least one luminescence unit piece, luminous single with being coupled to this
The external wire of first piece;Step S2:There is provided a molding, this shaping mould has corresponding to one of encapsulating housing shape cavity;Step
Rapid S3:Luminescence unit is arranged at the specific correspondence position in cavity;Step S4:There is provided an encapsulating material, this encapsulating material system
Comprise curable epoxy glue, mixed light of fluorescent powder material, nm radiating powder implant etc.;Step S5:Encapsulating material is filled out
Enter and comprise in the cavity of luminescence unit, to coat luminescence unit and to form encapsulating housing, wherein, the package material of cladding luminescence unit
The nm conductive powder implant of material, its technical characteristic please refer to the description of each assembly in previous embodiment.
Lamp housing integrated light emitting diode device of the present invention, having can 360 degree of omnibearing luminous from all directions, luminous flux
High, radiating is again good, processing procedure is simple, be substantially improved production yield and speed the advantages of.Additionally, the present invention produce heat directly by
Lamp housing surface emissivity, in the air, more need to need not cover another layer of lampshade or lamp housing as known again, and because homogeneity one fluorescence is multiple
Resin integrates molding, so light color temperature uniform no shadow, dark area effect.
It is noted that lamp housing integrated light emitting diode device of the present invention, luminous lamp housing is that white light of the present invention is sent out
Optical diode, and white light emitting diode of the present invention is also the role playing the part of the lamp housing that emits white light, luminous lamp housing is sent out with the present invention's
Both optical diodes integrate.In other words, heat-radiating substrate of the present invention is the role playing the part of luminous lamp housing, and luminous lamp housing is also
It is the role playing the part of heat-radiating substrate, heat-radiating substrate is integrated with both lamp housings.
The above, be only present pre-ferred embodiments, not the technical scope of the present invention imposed any restrictions, therefore
Any trickle amendment, equivalent variations and modification that every technical spirit according to the present invention is made to above example, all still fall within
In the range of technical solution of the present invention.
Claims (22)
1. a kind of lamp housing integrated light emitting diode is it is characterised in that include:
At least one luminescence unit, has at least one luminescence unit piece and at least one external wire being coupled to this luminescence unit piece;
And
One encapsulating housing, this encapsulating housing is formed by an encapsulating material, to coat this at least one luminescence unit in this encapsulation
In material, the spectrum that this luminescence unit is sent passes through this encapsulating material, thus directly the outside for this encapsulating housing goes out light;
Wherein, the structure of the one solidification that this this encapsulating material of encapsulating shell system is formed.
2. lamp housing integrated light emitting diode according to claim 1 it is characterised in that:This luminescence unit piece lights for one
Diode piece;
Respectively this luminescence unit piece has a fluorescence resin substrate, an encapsulation unit and a plurality of inner lead again;Wherein this lights
Dice system is arranged on this fluorescence resin substrate, and this fluorescence resin substrate coats this luminescence unit with this encapsulation unit system
Piece;
This encapsulation unit comprises curing materials, and this curing materials comprises one first nm heat conduction material and one first phosphor,
To coat this luminescence unit piece, spectrum that this luminescence unit piece is sent via this curing materials and this fluorescence resin substrate, with
For respectively this luminescence unit piece, outside carries out light, and this inner lead in this luminescence unit wherein same couples same being somebody's turn to do
This at least one luminescence unit piece in luminescence unit.
3. lamp housing integrated light emitting diode according to claim 2 it is characterised in that:This luminescence unit comprises a plurality of
Light emitting diode, when in this luminescence unit same respectively this light emitting diode piece form electrical string by this inner lead
During connection, respectively between the external wire of this luminescence unit, form an electrical parallel connection;Or when each this light-emitting diodes in this luminescence unit same
When pipe unit piece forms electrically parallel connection by this inner lead, respectively form electrical series between the external wire of this luminescence unit.
4. lamp housing integrated light emitting diode according to claim 2 it is characterised in that:This encapsulating material comprises one second
Nm heat conduction material, the spectrum that wherein this luminescence unit is sent, via this encapsulating material, is entered with the outside for this encapsulating housing
Row goes out light.
5. lamp housing integrated light emitting diode according to claim 4 it is characterised in that:This second nm heat conduction material is in this
Ratio in encapsulating material is between 5% to 70%.
6. lamp housing integrated light emitting diode according to claim 4 it is characterised in that:This encapsulating material comprises one again
Two phosphor, the spectrum that wherein this luminescence unit is sent, via this encapsulating material, is carried out with outside for this encapsulating housing
Go out light.
7. lamp housing integrated light emitting diode according to claim 1 it is characterised in that:Respectively one end coupling of this external wire
It is connected to this at least one luminescence unit, the other end of this external wire exposes to one of this encapsulating housing bottom side.
8. lamp housing integrated light emitting diode according to claim 4 it is characterised in that:This first nm heat conduction material or should
Second nm heat conduction material comprises a plurality of nm conductive particle, and the chi footpath of this nm conductive particle is less than 50 nm, and wherein this how
Rice conductive particle comprises a plurality of metallics, a plurality of metal oxide particle, a plurality of ceramic particle and a plurality of carbon
Be the combination of particle or one of them.
9. lamp housing integrated light emitting diode according to claim 6 it is characterised in that:This first phosphor or this second
Phosphor comprises a yellow fluorescence material, and selectivity comprises red fluorescence material, green fluorescence material or orange phosphor, wherein glimmering
The material of finish is aluminate-series fluorescent material, silicate fluorescent material, nitride fluorescent material and nitrogen oxides system
The combination of fluorescent material or one of them.
10. lamp housing integrated light emitting diode according to claim 1 and 2 it is characterised in that:This encapsulating material or this is solid
Change the composition of material, comprise epoxy resin, bisphenol-A system epoxy resin, cycloaliphatic epoxy resins, polysiloxanes modification asphalt mixtures modified by epoxy resin again
Fat, polyacids methyl ester modification epoxy resin, Organic modification epoxy resin, silica resin, Silica hydrogel, silicone rubber, polyorganosiloxane resin,
And the combination of Organic modification polyorganosiloxane resin or one of them.
11. lamp housing integrated light emitting diodes according to claim 1 it is characterised in that:This luminescence unit is sent
A length of below the 500nm of light wave, this luminescence unit includes blue light-emitting diode crystal grain or purple-light LED crystal grain.
12. lamp housing integrated light emitting diodes according to claim 1 it is characterised in that:The surface of this encapsulating housing applies
Cloth one grapheme material.
A kind of 13. lamp housing integrated light emitting diode devices, comprise:
One lamp housing integrated light emitting diode, has an encapsulating housing, inserts an encapsulating material in this encapsulating housing, multiple to coat
In this encapsulating material, wherein respectively this luminescence unit has at least one luminescence unit piece with to be coupled to this luminous to several luminescence units
One of dice external wire, the spectrum that this luminescence unit is sent passes through this encapsulating material, with to this encapsulating housing outside
Directly go out light;And
One lamp socket, comprises a joint portion and a power source connecting unit, wherein this joint portion is in order to reference to this lamp housing integrated light emitting
Diode and this lamp socket, this power source connecting unit couples an external power source;
Wherein, this encapsulating shell system is by the structure of the filled up one solidification being formed of this encapsulating material.
14. lamp housing integrated light emitting diode devices according to claim 13 it is characterised in that:This encapsulating material comprises
One nm heat conduction material, the spectrum that wherein this luminescence unit is sent passes through this encapsulating material, is entered with outside to this encapsulating housing
Row goes out light.
15. lamp housing integrated light emitting diode devices according to claim 14 it is characterised in that:This nm heat conduction material bag
Containing a plurality of nm conductive particle, the chi footpath of this nm conductive particle is less than 50 nm, and wherein this nm conductive particle comprises again
Several metallics, the combination of a plurality of metal oxide particle, a plurality of ceramic particle and a plurality of carbon systems particle or its
One of.
16. lamp housing integrated light emitting diode devices according to claim 13 it is characterised in that:This encapsulating material comprises
Epoxy resin (, bisphenol-A system epoxy resin, cycloaliphatic epoxy resins, polysiloxanes modification epoxy resin, polyacids methyl ester modification ring
Oxygen tree fat, Organic modification epoxy resin, silica resin, Silica hydrogel, silicone rubber, polyorganosiloxane resin and the poly- silica of Organic modification
The combination of alkane resin or one of them.
17. lamp housing integrated light emitting diode devices according to claim 13 it is characterised in that:This luminescence unit is sent out
A length of below the 500nm of light wave going out, this luminescence unit includes blue light-emitting diode crystal grain or purple-light LED crystal grain.
18. lamp housing integrated light emitting diode devices according to claim 13 it is characterised in that:Respectively this luminescence unit tool
There are this luminescence unit piece a plurality of, this luminescence unit piece is a plurality of light emitting diodes, when each in this luminescence unit same
When this luminescence unit piece forms electrical series by a plurality of inner leads, respectively between the external wire of this luminescence unit, form an electricity
Property in parallel;Or when in this luminescence unit same, respectively this luminescence unit piece forms electrically parallel connection by a plurality of inner leads, respectively
Form electrical series between the external wire of this luminescence unit.
19. lamp housing integrated light emitting diode devices according to claim 13 it is characterised in that:Comprise a driving electricity again
Road, is coupled to the external wire of this luminescence unit, and this drive circuit changes an external power source into a driving signal, to control this
Light unit go out light.
A kind of 20. manufacture methods of lamp housing integrated light emitting diode, comprise:
There is provided a plurality of luminescence units, respectively to have a luminescence unit external be coupled to this luminescence unit one leads for this luminescence unit
Line;
There is provided a molding, this shaping mould has corresponding to one of encapsulating housing cavity;
This luminescence unit is arranged at the specific correspondence position in this cavity;
There is provided an encapsulating material, this encapsulating material comprises curable epoxy glue, mixed light of fluorescent powder material, a plurality of nm
Conductive particle;
This encapsulating material is inserted and riddles in this cavity comprising this luminescence unit, with coat this luminescence unit this light
Unit simultaneously forms this encapsulating housing, and wherein, the spectrum that this luminescence unit is sent passes through this encapsulating material and this nm heat conduction
Particle, goes out light with outside to this encapsulating housing.
The manufacture method of 21. lamp housing integrated light emitting diodes according to claim 20 it is characterised in that:This nm is led
The chi footpath of hot particle is less than 50 nm, wherein this nm conductive particle, comprises a plurality of metallics, a plurality of metal-oxide
The combination of particle, a plurality of ceramic particle and a plurality of carbon systems particle or one of them.
The manufacture method of 22. lamp housing integrated light emitting diodes according to claim 20 it is characterised in that:This package material
Material comprises epoxy resin, bisphenol-A system epoxy resin, cycloaliphatic epoxy resins, polysiloxanes modification epoxy resin, polyacids methyl ester again
Modification epoxy resin, Organic modification epoxy resin, silica resin, Silica hydrogel, silicone rubber, polyorganosiloxane resin and Organic modification
The combination of polyorganosiloxane resin or one of them.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209289A (en) * | 2002-01-17 | 2003-07-25 | Asahi Matsushita Electric Works Ltd | Light emitting diode |
US20120037934A1 (en) * | 2010-08-16 | 2012-02-16 | Han-Ming Lee | Pre-molded LED light bulb package |
CN104253200A (en) * | 2013-06-27 | 2014-12-31 | 广镓光电股份有限公司 | Light emitting assembly and manufacturing method thereof |
CN104854717A (en) * | 2012-12-05 | 2015-08-19 | 皇家飞利浦有限公司 | A color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire |
CN204693116U (en) * | 2015-06-11 | 2015-10-07 | 东贝光电科技股份有限公司 | Solid-state sealed LED bulb |
CN105098047A (en) * | 2014-05-08 | 2015-11-25 | 罗冠傑 | Sheet type white light emitting diode, preparation method thereof and packaging adhesive material |
-
2016
- 2016-01-29 CN CN201610065048.XA patent/CN106449618A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209289A (en) * | 2002-01-17 | 2003-07-25 | Asahi Matsushita Electric Works Ltd | Light emitting diode |
US20120037934A1 (en) * | 2010-08-16 | 2012-02-16 | Han-Ming Lee | Pre-molded LED light bulb package |
CN104854717A (en) * | 2012-12-05 | 2015-08-19 | 皇家飞利浦有限公司 | A color conversion arrangement, a lighting unit, a solid state light emitter package and a luminaire |
CN104253200A (en) * | 2013-06-27 | 2014-12-31 | 广镓光电股份有限公司 | Light emitting assembly and manufacturing method thereof |
CN105098047A (en) * | 2014-05-08 | 2015-11-25 | 罗冠傑 | Sheet type white light emitting diode, preparation method thereof and packaging adhesive material |
CN204693116U (en) * | 2015-06-11 | 2015-10-07 | 东贝光电科技股份有限公司 | Solid-state sealed LED bulb |
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Application publication date: 20170222 |