CN106449586A - High-power rectifying bridge structure - Google Patents
High-power rectifying bridge structure Download PDFInfo
- Publication number
- CN106449586A CN106449586A CN201610635436.7A CN201610635436A CN106449586A CN 106449586 A CN106449586 A CN 106449586A CN 201610635436 A CN201610635436 A CN 201610635436A CN 106449586 A CN106449586 A CN 106449586A
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- connection sheet
- shaped connection
- diode chip
- connecting piece
- shaped connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a high-power rectifying bridge structure. The high-power rectifying bridge structure comprises a first diode chip, a second diode chip, a third diode chip, a fourth diode chip, a fifth diode chip and a sixth diode chip, a T-shaped connecting piece, a first L-shaped connecting piece, a second L-shaped connecting piece, a first strip-shaped connecting piece and a second strip-shaped connecting piece which are coated with an epoxy packaging body, wherein the T-shaped connecting piece is positioned between the first L-shaped connecting piece and the second L-shaped connecting piece; the first strip-shaped connecting piece and the second strip-shaped connecting piece are positioned on the two sides of the first L-shaped connecting piece and the second L-shaped connecting piece respectively; the first diode chip, the third diode chip and the fifth diode chip are mounted on a supporting region of the first strip-shaped connecting piece; and the second diode chip, the fourth diode chip and the sixth diode chip are mounted on respective supporting regions of the first L-shaped connecting piece, the second L-shaped connecting piece and the T-shaped connecting piece respectively. By adoption of the high-power rectifying bridge structure, the production manual efficiency is improved by 8-10 times; the utilization rate of a lead frame is improved by 10%; and a graphite boat is not used in the welding process of the structure, so that the energy utilization rate of a welding furnace is improved.
Description
Technical field
The present invention relates to a kind of rectified semiconductor device, more particularly, to a kind of power rectifier bridge construction.
Background technology
The bridge architecture that rectifier bridge device is made up of six commutation diodes, it utilizes the unilateal conduction of diode
Characteristic carries out rectification to alternating current, because bridge rectifier doubles than ripple rectification to the utilization ratio inputting positive sine wave, is
One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted in galvanic circuit.
Existing like product structure be chip three positive three counter place, two strips connect chip architectures, are primarily present following disadvantage
End：Product structure is complicated to be produced it is difficult to realize the few people's metaplasia of automatization, and production technology is high to manual work degree of dependence, produces effect
Rate is low, and in welding process, material needs to enter stove together with graphite ship, and efficiency of energy utilization is low.
Content of the invention
It is an object of the present invention to provide a kind of power rectifier bridge construction, this power rectifier bridge construction is tower structure,
Dependence to manual work decreased to greatest extent from technological design, 8 ~ 10 times of productive manpower improved efficiency, lead frame
Utilization rate improves 10%, does not use graphite ship during this structure welding, improves soldering furnace efficiency of energy utilization.
For reaching above-mentioned purpose, the technical solution used in the present invention is：A kind of power rectifier bridge construction, including：By ring
The first, second, third, fourth of oxygen packaging body coats, the five, the 6th diode chip for backlight unit, T-shaped connection sheet, the first L-shaped connect
Piece, the second L-shaped connection sheet, the first bar shaped connection sheet and the second bar shaped connection sheet, described T-shaped connection sheet is located at the first L-shaped and connects
Between piece, the second L-shaped connection sheet, described first bar shaped connection sheet, the second bar shaped connection sheet respectively be located at the first L-shaped connection sheet,
Second L-shaped connection sheet both sides；
Described first, the three, the 5th diode chip for backlight unit are installed on the Support of the first bar shaped connection sheet, described second, the 4th,
6th diode chip for backlight unit is respectively arranged in the first L-shaped connection sheet, the second L-shaped connection sheet and the respective Support of T-shaped connection sheet；
One first connection sheet connects the first diode chip for backlight unit and the first L-shaped connection sheet, and one second connection sheet connects the second diode
Chip and the second bar shaped connection sheet, one the 3rd connection sheet connects the 3rd diode chip for backlight unit and the second L-shaped connection sheet, one the 4th connection
Piece connects the 4th diode chip for backlight unit and the second bar shaped connection sheet, and one the 5th connection sheet connects the 5th diode chip for backlight unit and T-shaped connects
Piece, one the 6th connection sheet connects the 6th diode chip for backlight unit and the second bar shaped connection sheet；
Positioned at T-shaped connection sheet, the first L-shaped connection sheet, the second L-shaped connection sheet each end pin area respectively as exchange input
End, positioned at the respective end of the first bar shaped connection sheet and the second bar shaped connection sheet pin area respectively as electrode input end and negative pole
Input.
In technique scheme, further improved scheme is as follows：
In such scheme, described ac input end is located between electrode input end and negative input.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect：
Power rectifier bridge construction of the present invention, it is tower structure, decreases to greatest extent to craft from technological design
The dependence of operation, 8 ~ 10 times of productive manpower improved efficiency, lead frame utilization rate improves 10%, during this structure welding not
Using graphite ship, improve soldering furnace efficiency of energy utilization.
Brief description
Accompanying drawing 1 is existing rectifier bridge device structural representation；
Accompanying drawing 2 is power rectifier bridge construction structural representation of the present invention；
Accompanying drawing 3 is power rectifier bridge construction partial structural diagram one of the present invention；
Accompanying drawing 4 is power rectifier bridge construction partial structural diagram two of the present invention.
In the figures above：1st, epoxy packages body；2nd, the first diode chip for backlight unit；3rd, the second diode chip for backlight unit；4th, the three or two pole
Die；5th, the 4th diode chip for backlight unit；6th, the 5th diode chip for backlight unit；7th, the 6th diode chip for backlight unit；8th, T-shaped connection sheet；9th, a L
Shape connection sheet；10th, the second L-shaped connection sheet；11st, the first bar shaped connection sheet；12nd, the second bar shaped connection sheet；13rd, the first connection sheet；
14th, the second connection sheet；15th, the 3rd connection sheet；16th, the 4th connection sheet；17th, the 5th connection sheet；18th, the 6th connection sheet.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Embodiment 1：A kind of power rectifier bridge construction, including：By epoxy packages body 1 coat first, second, third, fourth,
Five, the 6th diode chip for backlight unit 2,3,4,5,6,7, T-shaped connection sheet 8, the first L-shaped connection sheet 9, the second L-shaped connection sheet 10, first
Bar shaped connection sheet 11 and the second bar shaped connection sheet 12, described T-shaped connection sheet 8 is located at the first L-shaped connection sheet 9, the second L-shaped connection sheet
Between 10, described first bar shaped connection sheet 11, the second bar shaped connection sheet 12 are located at the first L-shaped connection sheet 9, the second L-shaped even respectively
Contact pin 10 both sides；
Described first, the three, the 5th diode chip for backlight unit 2,4,6 are installed on the Support of the first bar shaped connection sheet 11, and described
2nd, the four, the 6th diode chip for backlight unit 3,5,7 are respectively arranged in the first L-shaped connection sheet 9, the second L-shaped connection sheet 10 and T-shaped and connect
The respective Support of piece 8；
One first connection sheet 13 connects the first diode chip for backlight unit 2 and the first L-shaped connection sheet 9, and one second connection sheet 14 connects second
Diode chip for backlight unit 3 and the second bar shaped connection sheet 12, the 3rd connection sheet 15 connects the 3rd diode chip for backlight unit 4 and the second L-shaped connects
Piece 10, the 4th connection sheet 16 connects the 4th diode chip for backlight unit 5 and the second bar shaped connection sheet 12, and the 5th connection sheet 17 connects the
Five diode chip for backlight unit 6 and T-shaped connection sheet 8, the 6th connection sheet 18 connects the 6th diode chip for backlight unit 7 and the second bar shaped connection sheet
12；
Positioned at T-shaped connection sheet 8, the first L-shaped connection sheet 9, the respective end of the second L-shaped connection sheet 10 pin area respectively as exchange
Input, the pin area positioned at the first bar shaped connection sheet 11 and the respective end of the second bar shaped connection sheet 12 inputs respectively as positive pole
End and negative input.
Embodiment 2：A kind of power rectifier bridge construction, including：By epoxy packages body 1 coat first, second, third,
Four, the five, the 6th diode chip for backlight unit 2,3,4,5,6,7, T-shaped connection sheet 8, the first L-shaped connection sheet 9, the second L-shaped connection sheet
10th, the first bar shaped connection sheet 11 and the second bar shaped connection sheet 12, described T-shaped connection sheet 8 is located at the first L-shaped connection sheet 9, the 2nd L
Between shape connection sheet 10, described first bar shaped connection sheet 11, the second bar shaped connection sheet 12 be located at respectively the first L-shaped connection sheet 9, the
Two L-shaped connection sheet 10 both sides；
Described first, the three, the 5th diode chip for backlight unit 2,4,6 are installed on the Support of the first bar shaped connection sheet 11, and described
2nd, the four, the 6th diode chip for backlight unit 3,5,7 are respectively arranged in the first L-shaped connection sheet 9, the second L-shaped connection sheet 10 and T-shaped and connect
The respective Support of piece 8；
One first connection sheet 13 connects the first diode chip for backlight unit 2 and the first L-shaped connection sheet 9, and one second connection sheet 14 connects second
Diode chip for backlight unit 3 and the second bar shaped connection sheet 12, the 3rd connection sheet 15 connects the 3rd diode chip for backlight unit 4 and the second L-shaped connects
Piece 10, the 4th connection sheet 16 connects the 4th diode chip for backlight unit 5 and the second bar shaped connection sheet 12, and the 5th connection sheet 17 connects the
Five diode chip for backlight unit 6 and T-shaped connection sheet 8, the 6th connection sheet 18 connects the 6th diode chip for backlight unit 7 and the second bar shaped connection sheet
12；
Positioned at T-shaped connection sheet 8, the first L-shaped connection sheet 9, the respective end of the second L-shaped connection sheet 10 pin area respectively as exchange
Input, the pin area positioned at the first bar shaped connection sheet 11 and the respective end of the second bar shaped connection sheet 12 inputs respectively as positive pole
End and negative input.
During using above-mentioned power rectifier bridge construction, it is tower structure, reduces to greatest extent from technological design
Dependence to manual work, 8 ~ 10 times of productive manpower improved efficiency, lead frame utilization rate improves 10%, this structure welding
During do not use graphite ship, improve soldering furnace efficiency of energy utilization.
Above-described embodiment only technology design to illustrate the invention and feature, its object is to allow person skilled in the art
Scholar will appreciate that present disclosure and implements according to this, can not be limited the scope of the invention with this.All according to the present invention
Equivalence changes or modification that spirit is made, all should be included within the scope of the present invention.
Claims (2)
1. a kind of power rectifier bridge construction it is characterised in that：Including：By epoxy packages body（1）The first, second of cladding, the
3rd, the four, the five, the 6th diode chip for backlight unit（2、3、4、5、6、7）, T-shaped connection sheet（8）, the first L-shaped connection sheet（9）, the 2nd L
Shape connection sheet（10）, the first bar shaped connection sheet（11）With the second bar shaped connection sheet（12）, described T-shaped connection sheet（8）Positioned at a L
Shape connection sheet（9）, the second L-shaped connection sheet（10）Between, described first bar shaped connection sheet（11）, the second bar shaped connection sheet（12）Point
Wei Yu not the first L-shaped connection sheet（9）, the second L-shaped connection sheet（10）Both sides；
Described first, the three, the 5th diode chip for backlight unit（2、4、6）It is installed on the first bar shaped connection sheet（11）Support on, institute
State second, the four, the 6th diode chip for backlight unit（3、5、7）It is respectively arranged in the first L-shaped connection sheet（9）, the second L-shaped connection sheet（10）
With T-shaped connection sheet（8）Respective Support；
One first connection sheet（13）Connect the first diode chip for backlight unit（2）With the first L-shaped connection sheet（9）, one second connection sheet（14）
Connect the second diode chip for backlight unit（3）With the second bar shaped connection sheet（12）, one the 3rd connection sheet（15）Connect the 3rd diode chip for backlight unit
（4）With the second L-shaped connection sheet（10）, one the 4th connection sheet（16）Connect the 4th diode chip for backlight unit（5）With the second bar shaped connection sheet
（12）, one the 5th connection sheet（17）Connect the 5th diode chip for backlight unit（6）With T-shaped connection sheet（8）, one the 6th connection sheet（18）Connect
6th diode chip for backlight unit（7）With the second bar shaped connection sheet（12）；
Positioned at T-shaped connection sheet（8）, the first L-shaped connection sheet（9）, the second L-shaped connection sheet（10）Each the pin area of end is made respectively
For ac input end, positioned at the first bar shaped connection sheet（11）With the second bar shaped connection sheet（12）Each the pin area of end is made respectively
For electrode input end and negative input.
2. power rectifier bridge construction according to claim 1 it is characterised in that：It is defeated that described ac input end is located at positive pole
Enter between end and negative input.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610635436.7A CN106449586A (en) | 2016-08-05 | 2016-08-05 | High-power rectifying bridge structure |
| PCT/CN2017/089463 WO2018024043A1 (en) | 2016-08-05 | 2017-06-22 | High power rectifier bridge structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610635436.7A CN106449586A (en) | 2016-08-05 | 2016-08-05 | High-power rectifying bridge structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449586A true CN106449586A (en) | 2017-02-22 |
Family
ID=58184800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610635436.7A Pending CN106449586A (en) | 2016-08-05 | 2016-08-05 | High-power rectifying bridge structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106449586A (en) |
| WO (1) | WO2018024043A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018024043A1 (en) * | 2016-08-05 | 2018-02-08 | 苏州固锝电子股份有限公司 | High power rectifier bridge structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201011657Y (en) * | 2006-12-28 | 2008-01-23 | 沈富德 | Three-phase commutating bridge flat packaging power module |
| CN201479030U (en) * | 2009-07-30 | 2010-05-19 | 苏州固锝电子股份有限公司 | Thin three-phase bridge rectifier |
| CN202736914U (en) * | 2012-07-31 | 2013-02-13 | 黄山市祁门新飞电子科技发展有限公司 | Three-phase rectifier bridge |
| CN205944081U (en) * | 2016-08-05 | 2017-02-08 | 苏州固锝电子股份有限公司 | High -power rectifier bridge structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460554A1 (en) * | 1990-05-30 | 1991-12-11 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
| CN202443969U (en) * | 2011-12-28 | 2012-09-19 | 宿迁杰瑞半导体科技有限公司 | Line plate type three-phase rectification bridge |
| CN106449586A (en) * | 2016-08-05 | 2017-02-22 | 苏州固锝电子股份有限公司 | High-power rectifying bridge structure |
-
2016
- 2016-08-05 CN CN201610635436.7A patent/CN106449586A/en active Pending
-
2017
- 2017-06-22 WO PCT/CN2017/089463 patent/WO2018024043A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201011657Y (en) * | 2006-12-28 | 2008-01-23 | 沈富德 | Three-phase commutating bridge flat packaging power module |
| CN201479030U (en) * | 2009-07-30 | 2010-05-19 | 苏州固锝电子股份有限公司 | Thin three-phase bridge rectifier |
| CN202736914U (en) * | 2012-07-31 | 2013-02-13 | 黄山市祁门新飞电子科技发展有限公司 | Three-phase rectifier bridge |
| CN205944081U (en) * | 2016-08-05 | 2017-02-08 | 苏州固锝电子股份有限公司 | High -power rectifier bridge structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018024043A1 (en) * | 2016-08-05 | 2018-02-08 | 苏州固锝电子股份有限公司 | High power rectifier bridge structure |
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| Publication number | Publication date |
|---|---|
| WO2018024043A1 (en) | 2018-02-08 |
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Application publication date: 20170222 |
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