CN106449586A - High-power rectifying bridge structure - Google Patents
High-power rectifying bridge structure Download PDFInfo
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- CN106449586A CN106449586A CN201610635436.7A CN201610635436A CN106449586A CN 106449586 A CN106449586 A CN 106449586A CN 201610635436 A CN201610635436 A CN 201610635436A CN 106449586 A CN106449586 A CN 106449586A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/464—Additional interconnections in combination with leadframes
- H10W70/466—Tape carriers or flat leads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/811—Multiple chips on leadframes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
- H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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Abstract
本发明一种大功率整流桥结构，包括：由环氧封装体包覆的第一、第二、第三、第四、第五、第六二极管芯片、T形连接片、第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片，所述T形连接片位于第一L形连接片、第二L形连接片之间，所述第一条形连接片、第二条形连接片分别位于第一L形连接片、第二L形连接片两侧，所述第一、第三、第五二极管芯片安装于第一条形连接片的支撑区上，所述第二、第四、第六二极管芯片分别安装于第一L形连接片、第二L形连接片和T形连接片各自的支撑区。本发明大功率整流桥结构生产人工效率提升了8~10倍，引线框利用率提升了10%，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。
A high-power rectifier bridge structure of the present invention includes: first, second, third, fourth, fifth, sixth diode chips covered by an epoxy package, a T-shaped connecting piece, a first L Shaped connecting piece, the second L-shaped connecting piece, the first bar-shaped connecting piece and the second bar-shaped connecting piece, the T-shaped connecting piece is located between the first L-shaped connecting piece and the second L-shaped connecting piece, the The first strip-shaped connecting piece and the second strip-shaped connecting piece are respectively located on both sides of the first L-shaped connecting piece and the second L-shaped connecting piece, and the first, third and fifth diode chips are mounted on the first strip The second, fourth, and sixth diode chips are mounted on the supporting areas of the first L-shaped connecting piece, the second L-shaped connecting piece, and the T-shaped connecting piece respectively. The production labor efficiency of the high-power rectifier bridge structure of the present invention is increased by 8 to 10 times, and the utilization rate of the lead frame is increased by 10%. The structure does not use graphite boats during the welding process, which improves the energy utilization efficiency of the welding furnace.
Description
技术领域technical field
本发明涉及一种整流半导体器件，尤其涉及一种大功率整流桥结构。The invention relates to a rectifying semiconductor device, in particular to a high-power rectifying bridge structure.
背景技术Background technique
整流桥器件是由六个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正正弦波的利用效率比波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。The rectifier bridge device is a bridge structure composed of six rectifier diodes. It uses the unidirectional conduction characteristics of the diodes to rectify the alternating current. Since the utilization efficiency of the bridge rectifier for the input sine wave is twice that of the wave rectification, it is suitable for A significant improvement of diode half-wave rectification, it is widely used in circuits that convert alternating current to direct current.
现有同类产品结构为芯片三正三反放置，两颗长条连接片结构，主要存在如下弊端：产品结构复杂，难以实现自动化少人化生产，生产工艺对手工作业依赖程度高，生产效率低，焊接过程中材料需要与石墨船一起进炉，能源利用效率低。The structure of existing similar products is that the chip is placed in three positive and three reverse directions, and the structure of two long connecting pieces has the following disadvantages: the product structure is complex, it is difficult to realize automatic production with fewer people, the production process is highly dependent on manual work, and the production efficiency is low. During the welding process, the material needs to be fed into the furnace together with the graphite boat, which leads to low energy utilization efficiency.
发明内容Contents of the invention
本发明目的是提供一种大功率整流桥结构，该大功率整流桥结构为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8~10倍，引线框利用率提升了10%，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。The purpose of the present invention is to provide a high-power rectifier bridge structure, the high-power rectifier bridge structure is a frame structure, which minimizes the dependence on manual work in terms of process design, and improves the production labor efficiency by 8 to 10 times. The utilization rate of the frame is increased by 10%. The graphite boat is not used in the welding process of this structure, which improves the energy utilization efficiency of the welding furnace.
为达到上述目的，本发明采用的技术方案是：一种大功率整流桥结构，包括：由环氧封装体包覆的第一、第二、第三、第四、第五、第六二极管芯片、T形连接片、第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片，所述T形连接片位于第一L形连接片、第二L形连接片之间，所述第一条形连接片、第二条形连接片分别位于第一L形连接片、第二L形连接片两侧；In order to achieve the above purpose, the technical solution adopted by the present invention is: a high-power rectifier bridge structure, including: the first, second, third, fourth, fifth, and sixth diodes covered by an epoxy package Tube chip, T-shaped connecting sheet, first L-shaped connecting sheet, second L-shaped connecting sheet, first bar-shaped connecting sheet and second bar-shaped connecting sheet, the T-shaped connecting sheet is located at the first L-shaped connecting sheet, Between the second L-shaped connecting pieces, the first strip-shaped connecting piece and the second strip-shaped connecting piece are respectively located on both sides of the first L-shaped connecting piece and the second L-shaped connecting piece;
所述第一、第三、第五二极管芯片安装于第一条形连接片的支撑区上，所述第二、第四、第六二极管芯片分别安装于第一L形连接片、第二L形连接片和T形连接片各自的支撑区；The first, third, and fifth diode chips are installed on the supporting area of the first strip-shaped connecting sheet, and the second, fourth, and sixth diode chips are respectively installed on the first L-shaped connecting sheet , the respective supporting areas of the second L-shaped connecting piece and the T-shaped connecting piece;
一第一连接片连接第一二极管芯片和第一L形连接片，一第二连接片连接第二二极管芯片和第二条形连接片，一第三连接片连接第三二极管芯片和第二L形连接片，一第四连接片连接第四二极管芯片和第二条形连接片，一第五连接片连接第五二极管芯片和T形连接片，一第六连接片连接第六二极管芯片和第二条形连接片；A first connection piece is connected to the first diode chip and the first L-shaped connection piece, a second connection piece is connected to the second diode chip and the second bar-shaped connection piece, and a third connection piece is connected to the third diode tube chip and the second L-shaped connecting piece, a fourth connecting piece connects the fourth diode chip and the second bar-shaped connecting piece, a fifth connecting piece connects the fifth diode chip and the T-shaped connecting piece, and a first The six connecting pieces are connected to the sixth diode chip and the second strip-shaped connecting piece;
位于T形连接片、第一L形连接片、第二L形连接片各自末端的引脚区分别作为交流输入端，位于第一条形连接片和第二条形连接片各自末端的引脚区分别作为正极输入端和负极输入端。The pin areas located at the respective ends of the T-shaped connecting piece, the first L-shaped connecting piece, and the second L-shaped connecting piece are respectively used as AC input terminals, and the pins located at the respective ends of the first strip-shaped connecting piece and the second strip-shaped connecting piece The area is used as the positive input terminal and the negative input terminal respectively.
上述技术方案中进一步改进的方案如下：The scheme of further improvement in above-mentioned technical scheme is as follows:
上述方案中，所述交流输入端位于正极输入端和负极输入端之间。In the above solution, the AC input terminal is located between the positive input terminal and the negative input terminal.
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：Due to the use of the above-mentioned technical solutions, the present invention has the following advantages and effects compared with the prior art:
本发明大功率整流桥结构，其为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8~10倍，引线框利用率提升了10%，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。The high-power rectifier bridge structure of the present invention is a frame structure, which minimizes the dependence on manual work in terms of process design, improves the labor efficiency of production by 8-10 times, and improves the utilization rate of lead frames by 10%. The graphite boat is not used in the welding process, which improves the energy utilization efficiency of the welding furnace.
附图说明Description of drawings
附图1为现有整流桥器件结构示意图；Accompanying drawing 1 is the structure schematic diagram of existing rectifier bridge device;
附图2为本发明大功率整流桥结构结构示意图；Accompanying drawing 2 is the structure schematic diagram of high-power rectifier bridge structure of the present invention;
附图3为本发明大功率整流桥结构局部结构示意图一；Accompanying drawing 3 is a schematic diagram of a partial structure of the high-power rectifier bridge structure of the present invention;
附图4为本发明大功率整流桥结构局部结构示意图二。Accompanying drawing 4 is the partial structure schematic diagram II of the high-power rectifier bridge structure of the present invention.
以上附图中：1、环氧封装体；2、第一二极管芯片；3、第二二极管芯片；4、第三二极管芯片；5、第四二极管芯片；6、第五二极管芯片；7、第六二极管芯片；8、T形连接片；9、第一L形连接片；10、第二L形连接片；11、第一条形连接片；12、第二条形连接片；13、第一连接片；14、第二连接片；15、第三连接片；16、第四连接片；17、第五连接片；18、第六连接片。In the above drawings: 1. Epoxy package; 2. The first diode chip; 3. The second diode chip; 4. The third diode chip; 5. The fourth diode chip; 6. The fifth diode chip; 7. The sixth diode chip; 8. T-shaped connecting piece; 9. The first L-shaped connecting piece; 10. The second L-shaped connecting piece; 11. The first strip-shaped connecting piece; 12. The second strip connecting piece; 13. The first connecting piece; 14. The second connecting piece; 15. The third connecting piece; 16. The fourth connecting piece; 17. The fifth connecting piece; 18. The sixth connecting piece .
具体实施方式detailed description
下面结合附图及实施例对本发明作进一步描述：The present invention will be further described below in conjunction with accompanying drawing and embodiment:
实施例1：一种大功率整流桥结构，包括：由环氧封装体1包覆的第一、第二、第三、第四、第五、第六二极管芯片2、3、4、5、6、7、T形连接片8、第一L形连接片9、第二L形连接片10、第一条形连接片11和第二条形连接片12，所述T形连接片8位于第一L形连接片9、第二L形连接片10之间，所述第一条形连接片11、第二条形连接片12分别位于第一L形连接片9、第二L形连接片10两侧；Embodiment 1: A high-power rectifier bridge structure, including: first, second, third, fourth, fifth, sixth diode chips 2, 3, 4, 5, 6, 7, T-shaped connecting piece 8, first L-shaped connecting piece 9, second L-shaped connecting piece 10, first strip-shaped connecting piece 11 and second strip-shaped connecting piece 12, the T-shaped connecting piece 8 is located between the first L-shaped connecting piece 9 and the second L-shaped connecting piece 10, and the first strip-shaped connecting piece 11 and the second strip-shaped connecting piece 12 are respectively located on the first L-shaped connecting piece 9 and the second L-shaped connecting piece Shaped connecting piece 10 both sides;
所述第一、第三、第五二极管芯片2、4、6安装于第一条形连接片11的支撑区上，所述第二、第四、第六二极管芯片3、5、7分别安装于第一L形连接片9、第二L形连接片10和T形连接片8各自的支撑区；The first, third, and fifth diode chips 2, 4, and 6 are installed on the support area of the first strip-shaped connecting piece 11, and the second, fourth, and sixth diode chips 3, 5 , 7 are respectively installed in the supporting areas of the first L-shaped connecting piece 9, the second L-shaped connecting piece 10 and the T-shaped connecting piece 8;
一第一连接片13连接第一二极管芯片2和第一L形连接片9，一第二连接片14连接第二二极管芯片3和第二条形连接片12，一第三连接片15连接第三二极管芯片4和第二L形连接片10，一第四连接片16连接第四二极管芯片5和第二条形连接片12，一第五连接片17连接第五二极管芯片6和T形连接片8，一第六连接片18连接第六二极管芯片7和第二条形连接片12；A first connecting piece 13 connects the first diode chip 2 and the first L-shaped connecting piece 9, a second connecting piece 14 connects the second diode chip 3 and the second bar-shaped connecting piece 12, and a third connection Sheet 15 connects the third diode chip 4 and the second L-shaped connecting sheet 10, a fourth connecting sheet 16 connects the fourth diode chip 5 and the second bar-shaped connecting sheet 12, and a fifth connecting sheet 17 connects the first Five diode chips 6 and T-shaped connecting piece 8, one sixth connecting piece 18 connects the sixth diode chip 7 and the second bar-shaped connecting piece 12;
位于T形连接片8、第一L形连接片9、第二L形连接片10各自末端的引脚区分别作为交流输入端，位于第一条形连接片11和第二条形连接片12各自末端的引脚区分别作为正极输入端和负极输入端。The pin areas at the respective ends of the T-shaped connecting piece 8, the first L-shaped connecting piece 9, and the second L-shaped connecting piece 10 are respectively used as AC input ends, located on the first strip-shaped connecting piece 11 and the second strip-shaped connecting piece 12 The pin areas at the respective ends serve as the positive input terminal and the negative input terminal respectively.
实施例2：一种大功率整流桥结构，包括：由环氧封装体1包覆的第一、第二、第三、第四、第五、第六二极管芯片2、3、4、5、6、7、T形连接片8、第一L形连接片9、第二L形连接片10、第一条形连接片11和第二条形连接片12，所述T形连接片8位于第一L形连接片9、第二L形连接片10之间，所述第一条形连接片11、第二条形连接片12分别位于第一L形连接片9、第二L形连接片10两侧；Embodiment 2: A high-power rectifier bridge structure, including: first, second, third, fourth, fifth, sixth diode chips 2, 3, 4, 5, 6, 7, T-shaped connecting piece 8, first L-shaped connecting piece 9, second L-shaped connecting piece 10, first strip-shaped connecting piece 11 and second strip-shaped connecting piece 12, the T-shaped connecting piece 8 is located between the first L-shaped connecting piece 9 and the second L-shaped connecting piece 10, and the first strip-shaped connecting piece 11 and the second strip-shaped connecting piece 12 are respectively located on the first L-shaped connecting piece 9 and the second L-shaped connecting piece Shaped connecting piece 10 both sides;
所述第一、第三、第五二极管芯片2、4、6安装于第一条形连接片11的支撑区上，所述第二、第四、第六二极管芯片3、5、7分别安装于第一L形连接片9、第二L形连接片10和T形连接片8各自的支撑区；The first, third, and fifth diode chips 2, 4, and 6 are installed on the support area of the first strip-shaped connecting piece 11, and the second, fourth, and sixth diode chips 3, 5 , 7 are respectively installed in the supporting areas of the first L-shaped connecting piece 9, the second L-shaped connecting piece 10 and the T-shaped connecting piece 8;
一第一连接片13连接第一二极管芯片2和第一L形连接片9，一第二连接片14连接第二二极管芯片3和第二条形连接片12，一第三连接片15连接第三二极管芯片4和第二L形连接片10，一第四连接片16连接第四二极管芯片5和第二条形连接片12，一第五连接片17连接第五二极管芯片6和T形连接片8，一第六连接片18连接第六二极管芯片7和第二条形连接片12；A first connecting piece 13 connects the first diode chip 2 and the first L-shaped connecting piece 9, a second connecting piece 14 connects the second diode chip 3 and the second bar-shaped connecting piece 12, and a third connection Sheet 15 connects the third diode chip 4 and the second L-shaped connecting sheet 10, a fourth connecting sheet 16 connects the fourth diode chip 5 and the second bar-shaped connecting sheet 12, and a fifth connecting sheet 17 connects the first Five diode chips 6 and T-shaped connecting piece 8, one sixth connecting piece 18 connects the sixth diode chip 7 and the second bar-shaped connecting piece 12;
位于T形连接片8、第一L形连接片9、第二L形连接片10各自末端的引脚区分别作为交流输入端，位于第一条形连接片11和第二条形连接片12各自末端的引脚区分别作为正极输入端和负极输入端。The pin areas at the respective ends of the T-shaped connecting piece 8, the first L-shaped connecting piece 9, and the second L-shaped connecting piece 10 are respectively used as AC input ends, located on the first strip-shaped connecting piece 11 and the second strip-shaped connecting piece 12 The pin areas at the respective ends serve as the positive input terminal and the negative input terminal respectively.
采用上述大功率整流桥结构时，其为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8~10倍，引线框利用率提升了10%，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。When the above-mentioned high-power rectifier bridge structure is adopted, it is a frame structure, which minimizes the dependence on manual work in terms of process design, increases the production labor efficiency by 8 to 10 times, and increases the lead frame utilization rate by 10%. No graphite boat is used in the structural welding process, which improves the energy utilization efficiency of the welding furnace.
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。The above-mentioned embodiments are only to illustrate the technical concept and characteristics of the present invention, and the purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and not to limit the protection scope of the present invention. All equivalent changes or modifications made according to the spirit of the present invention shall fall within the protection scope of the present invention.
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| CN201610635436.7A CN106449586A (en) | 2016-08-05 | 2016-08-05 | High-power rectifying bridge structure |
| PCT/CN2017/089463 WO2018024043A1 (en) | 2016-08-05 | 2017-06-22 | High power rectifier bridge structure |
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| WO2018024043A1 (en) * | 2016-08-05 | 2018-02-08 | 苏州固锝电子股份有限公司 | High power rectifier bridge structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201011657Y (en) * | 2006-12-28 | 2008-01-23 | 沈富德 | Three-phase rectifier bridge flat package power module |
| CN201479030U (en) * | 2009-07-30 | 2010-05-19 | 苏州固锝电子股份有限公司 | Thin Three-Phase Bridge Rectifier |
| CN202736914U (en) * | 2012-07-31 | 2013-02-13 | 黄山市祁门新飞电子科技发展有限公司 | Three-phase rectifier bridge |
| CN205944081U (en) * | 2016-08-05 | 2017-02-08 | 苏州固锝电子股份有限公司 | High -power rectifier bridge structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0460554A1 (en) * | 1990-05-30 | 1991-12-11 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
| CN202443969U (en) * | 2011-12-28 | 2012-09-19 | 宿迁杰瑞半导体科技有限公司 | Line plate type three-phase rectification bridge |
| CN106449586A (en) * | 2016-08-05 | 2017-02-22 | 苏州固锝电子股份有限公司 | High-power rectifying bridge structure |
-
2016
- 2016-08-05 CN CN201610635436.7A patent/CN106449586A/en active Pending
-
2017
- 2017-06-22 WO PCT/CN2017/089463 patent/WO2018024043A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201011657Y (en) * | 2006-12-28 | 2008-01-23 | 沈富德 | Three-phase rectifier bridge flat package power module |
| CN201479030U (en) * | 2009-07-30 | 2010-05-19 | 苏州固锝电子股份有限公司 | Thin Three-Phase Bridge Rectifier |
| CN202736914U (en) * | 2012-07-31 | 2013-02-13 | 黄山市祁门新飞电子科技发展有限公司 | Three-phase rectifier bridge |
| CN205944081U (en) * | 2016-08-05 | 2017-02-08 | 苏州固锝电子股份有限公司 | High -power rectifier bridge structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018024043A1 (en) * | 2016-08-05 | 2018-02-08 | 苏州固锝电子股份有限公司 | High power rectifier bridge structure |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018024043A1 (en) | 2018-02-08 |
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