CN106448607B - GOA driving circuit and liquid crystal display device - Google Patents
GOA driving circuit and liquid crystal display device Download PDFInfo
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- CN106448607B CN106448607B CN201611067049.4A CN201611067049A CN106448607B CN 106448607 B CN106448607 B CN 106448607B CN 201611067049 A CN201611067049 A CN 201611067049A CN 106448607 B CN106448607 B CN 106448607B
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 133
- 238000012423 maintenance Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 22
- 230000005611 electricity Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
It includes multiple GOA units that the present invention, which provides a kind of GOA driving circuit and liquid crystal display device, the GOA driving circuit, exports gate drive signal according to N grades of GOA units and gives N grades of display area horizontal scanning line；The GOA unit of odd level successively cascades, and the GOA unit of even level successively cascades；The N grades of GOA units include pull-up module, pull-down module, pull-up control module, drop-down maintenance module and bootstrap capacitor module；The pull-up module, pull-up control module, drop-down maintenance module, pull-down module and bootstrap capacitor module are connected to N grades of grid signal points, and the pull-up module, drop-down maintenance module and bootstrap capacitor module are connect with N grades of horizontal scanning lines.The present invention has the beneficial effect for reducing thin film transistor (TFT).
Description
Technical field
The present invention relates to field of liquid crystal display, more particularly to a kind of GOA driving circuit and liquid crystal display device.
Background technique
The driving of GOA (Gate Driver On Array) array substrate row is to utilize array substrate processing procedure in array substrate
Integrated grid horizontal drive circuit, can save the gate driving IC originally in array substrate, to reach reduction production cost
With realize frame purpose.
With the development of technology, narrow frame is a kind of inexorable trend.In the prior art, GOA driving circuit is brilliant using film
The quantity of body pipe is more, and how the quantity of film transistor is thinned in the case where not influencing function is a technical problem.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The purpose of the present invention is to provide a kind of GOA driving circuit and liquid crystal display devices.
To solve the above problems, technical solution provided by the invention is as follows:
The present invention provides a kind of GOA driving circuit, including multiple GOA units, drives according to N grades of GOA unit output grids
Dynamic signal gives N grades of display area horizontal scanning line；The GOA unit of odd level successively cascades, the GOA unit of even level successively grade
Connection；The N grades of GOA units include pull-up module, pull-down module, pull-up control module, drop-down maintenance module and bootstrapping electricity
Molar block；The pull-up module, pull-up control module, drop-down maintenance module, pull-down module and bootstrap capacitor module are connected to N
Grade grid signal point, the pull-up module, drop-down maintenance module and bootstrap capacitor module connect with N grades of horizontal scanning lines
It connects；
The drop-down maintenance module includes first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th
Thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the 7th thin film transistor (TFT) and the 8th thin film transistor (TFT), institute
The grid for stating first film transistor connect with drain electrode and the drain electrode of the second thin film transistor (TFT) and accesses first in the tie point
Low-frequency clock signal, the drain electrode of the source electrode, third thin film transistor (TFT) of the first film transistor and the second thin film transistor (TFT)
Grid be connected to a N grades of first node SN, the leakage of the source electrode of second thin film transistor (TFT), the 4th thin film transistor (TFT)
The grid of pole, the grid of the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT) is connected to N grades of second node PN；
The drain electrode of 5th thin film transistor (TFT) and the drain electrode of the 7th thin film transistor (TFT) are connect with N grades of grid signal point QN, institute
The drain electrode of the drain electrode and the 8th thin film transistor (TFT) of stating the 6th thin film transistor (TFT) is connect with N grades of horizontal scanning line GN, described
Third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the 7th thin film transistor (TFT) with
And the 8th the source electrode of thin film transistor (TFT) access DC low-voltage electricity VSS；
When N grades of GOA units be odd level GOA unit when, N grades of first node SN with N+1 grades of first node SN+
1 connection, the grid of the 7th thin film transistor (TFT) and the 8th thin film transistor (TFT) of N grades of second node PN and N+1 grades of GOA units
Connection, the 7th thin film transistor (TFT) of N grades of GOA units and the grid and N+1 grades of second node PN+ of the 8th thin film transistor (TFT)
1 connection.
Preferably, when N grades of GOA units are odd level GOA unit, the first low frequency of the N grades of GOA units access
First low-frequency clock signal opposite in phase of clock signal and the access of N+1 grades of GOA units.
Preferably, the pull-down module include the 11st thin film transistor (TFT), the drain electrode of the 11st thin film transistor (TFT) with
The grid signal point of this described grade connects, and the source electrode of the 11st thin film transistor (TFT) accesses the DC low-voltage electricity VSS；N
The grid of the first film transistor of grade GOA unit is connect with N+4 grades of horizontal scanning lines.
Preferably, the pull-up control module includes the 9th thin film transistor (TFT), and the source electrode of the 9th thin film transistor (TFT) connects
It is connected to the grid signal point of this grade；
The drain electrode of 9th thin film transistor (TFT) of N grades of GOA units accesses high level signal, the 9th thin film transistor (TFT)
Grid is connect with N-2 grades of horizontal scanning line Gn-2.
Preferably, the pull-up module includes the tenth thin film transistor (TFT), and the drain electrode of the tenth thin film transistor (TFT) accesses N
Grade high frequency clock signal CKn, the grid of the tenth thin film transistor (TFT) are connect with N grades of grid signal point Qn, and the described tenth is thin
The source electrode of film transistor is connect with N grades of horizontal scanning lines；
The range value and the N grades of high frequencies of the voltage value of the high level signal, first low-frequency clock signal
The range value of clock signal CKn is equal.
Preferably, the pull-up control module includes the 9th thin film transistor (TFT), and the source electrode of the 9th thin film transistor (TFT) connects
It is connected to N grades of grid signal point Qn；
The drain electrode of 9th thin film transistor (TFT) of N grades of GOA units and grid connect with N-2 grades of horizontal scanning line Gn-2
It connects.
Preferably, the bootstrap capacitor module includes bootstrap capacitor.
Preferably, the first low-frequency clock signal of each odd level accesses each odd level by the first public metal wire
GOA unit.
Preferably, the first low-frequency clock signal of each even level accesses each even level by the second public metal wire
GOA unit.
The present invention also provides a kind of liquid crystal display devices, including GOA driving circuit described in any of the above embodiments.
Compared with prior art, the present invention is by connecting two neighboring GOA unit, by by the odd number of front one
Grade GOA unit SN and PN with distinguish latter one even level GOA unit SN+1 and PN+1 connect, so as to so that
The local function of the drop-down maintenance module of two GOA units can share, so as to be arranged two in each GOA unit
A complete drop-down maintenance module has the beneficial effect for reducing thin film transistor (TFT).
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate institute's accompanying drawings, makees
Detailed description are as follows:
Detailed description of the invention
Fig. 1 is the local structural graph of the GOA driving circuit in one embodiment of the present invention.
Fig. 2 is the partial detailed circuit diagram of the GOA driving circuit in embodiment illustrated in fig. 1 of the present invention.
Fig. 3 is the timing diagram of the GOA driving circuit in embodiment illustrated in fig. 1 of the present invention.
Fig. 4 is the partial detailed circuit diagram of GOA driving circuit in another preferred embodiment of the present invention.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.
The similar unit of structure is to be given the same reference numerals in the figure.
Fig. 1 is please referred to, Fig. 1 is the circuit diagram of the GOA driving circuit in first preferred embodiment of the invention.Below all
It is to drive signal CK to be illustrated with 4 high frequency clocks.The GOA driving circuit includes multiple GOA units 100, according to N grades
GOA unit exports gate drive signal and gives N grades of display area horizontal scanning line.The GOA unit of odd level successively cascades, even number
The GOA unit of grade successively cascades.For example, a total of 100 grades of GOA units.1st grade of GOA unit, 3rd level GOA unit, the 5th grade
GOA unit is until the 99th grade of GOA unit successively cascades, and the 2nd grade of GOA unit, the 4th grade of GOA unit, the 6th grade of GOA unit are until the
100 grades of GOA units successively cascade.
Since the circuit structure of every level-one GOA unit 100 is identical, it is mono- to each GOA by taking N grades of GOA units as an example
The circuit structure of member 100 is described.
The N grades of GOA units include pull-up module 101, pull-down module 102, pull-up control module 103, drop-down maintenance mould
Block 104 and bootstrap capacitor module 105.The pull-up module 101, pull-up control module 103, drop-down maintenance module 104, lower drawing-die
Block 102 and bootstrap capacitor module 105 are connected to N grades of grid signal point Qn, the pull-up module 101, drop-down maintenance module
104 and bootstrap capacitor module 105 connect with N grades of horizontal scanning line GN.
Specifically, referring to Fig. 3, which includes first film transistor T1, the second thin film transistor (TFT)
It is T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, the 7th thin
Film transistor T7 and the 8th thin film transistor (TFT) T8.The grid of first film transistor T1 and drain electrode and the second thin film transistor (TFT)
The drain electrode of T2 connects and accesses the first low-frequency clock signal LC1/LC2, the source of the first film transistor T1 in the tie point
The grid of pole, the drain electrode of third thin film transistor (TFT) T3 and the second thin film transistor (TFT) T2 is connected to a N grades of first node SN, institute
State the drain electrode of source electrode, the 4th thin film transistor (TFT) T4, the grid of the 5th thin film transistor (TFT) article and of the second thin film transistor (TFT) T2
The grid of six thin film transistor (TFT) T6 is connected to N grades of second node PN；The drain electrode and the 7th of the 5th thin film transistor (TFT) T5
The drain electrode of thin film transistor (TFT) T7 is connect with N grades of grid signal point QN.The drain electrode of 6th thin film transistor (TFT) T6 and the 8th thin
The drain electrode of film transistor T8 is connect with N grades of horizontal scanning line GN, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4,
The source electrode of 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, the 7th thin film transistor (TFT) T7 and the 8th thin film transistor (TFT) T8
Access DC low-voltage electricity VSS.
Wherein, the pull-up module 101 include the tenth thin film transistor (TFT) T10, the grid of the tenth thin film transistor (TFT) T10 with should
N grid signal point QN connection, the drain electrode of the tenth thin film transistor (TFT) T10 access the N grades of high frequency clock signal CKN.Tenth is thin
The source electrode of film transistor T10 is connect with the N grades of horizontal scanning line GN.When the pull-up module 101 is mainly used for N grades of high frequencies
Clock signal CKN is exported to N grades of horizontal scanning line GN as gate drive signal.
The pull-up control module 103 includes the 9th thin film transistor (TFT) T9, and the source electrode of the 9th thin film transistor (TFT) T9 is connected to
The N grades of grid signal point QN.When N grades of the series is greater than 2, when that is to say that N is greater than 2, the 9th thin film transistor (TFT) T9
Drain electrode connect with grid and connect with N-2 grades of GOA horizontal scanning line Gn-2.As N=1 or 2, the 1st grade of GOA that is to say
The drain and gate of 9th thin film transistor (TFT) T9 of the pull-up control module 103 of unit and the 2nd grade of GOA unit is connected and is accessed
Enabling signal STV.When the pull-up control module 103 is used to control the conducting of the tenth thin film transistor (TFT) T10 of the pull-up module 101
Between.
The pull-down module 102 includes the 11st thin film transistor (TFT) T11, the drain electrode of the 11st thin film transistor (TFT) T11 and N
The source electrode of grade grid signal point QN connection, the 11st thin film transistor (TFT) T11 accesses DC low-voltage electricity VSS.The pull-down module 102 is used
It is dragged down in by the current potential of N grades of grid signal point Qn.
The bootstrap capacitor module 105 includes bootstrap capacitor Cb.
As inventive point of the invention, in the present embodiment, when N grades of GOA units 100 are the GOA unit of odd level,
N grades of first node SN are connect with N+1 grades of first node SN+1, N grades of second node PN and N+1 grades of GOA units
The grid of 7th thin film transistor (TFT) T7 and the 8th thin film transistor (TFT) T8 connects, the 7th film crystal of N grades of GOA units 100
The grid of pipe T7 and the 8th thin film transistor (TFT) T8 are connect with the second node PN+1；Also, N grades of GOA units 100 access
The first low-frequency clock signal LC1 and N+1 grades of GOA units 100 access the first low-frequency clock signal LC2 opposite in phase.
As shown in figure 3, CK1-CK4 is high frequency clock driving signal.LC1 and LC2 is low frequency driving signal, the two phase
It is completely opposite.VSS is constant pressure negative potential, that is to say DC low-voltage.
When LC1 is high potential, LC2 is low potential, and when LC1 is low potential, LC2 is high potential.Wherein, as LC1 and
LC2 alternately be high potential, thus realize it is time sharing shared so that the 5th in the drop-down maintenance module 104 of N grades of GOA units is thin
5th thin film transistor (TFT) of the drop-down maintenance module 104 of film transistor T5 and the 6th thin film transistor (TFT) T6 and N+1 grades of GOA units
T5 and the 6th thin film transistor (TFT) T6 are used alternatingly, and can lose to avoid thin film transistor (TFT) because long-time is in the effect of current stress
Effect.
Preferably, the first low-frequency clock signal LC1 of each odd level accesses each odd number by the first public metal wire
The GOA unit of grade.First low-frequency clock signal of each even level accesses the GOA of each even level by the second public metal wire
Unit.Certainly, it is not limited to this.
From the foregoing, it will be observed that the present invention is by connecting two neighboring GOA unit, by by the odd level of front one
The SN and PN of GOA unit are connect with the GOA unit SN+1 and PN+1 of latter one even level, so as to so that two GOA
The local function of the drop-down maintenance module of unit can share, complete so as to which two need not be arranged in each GOA unit
Maintenance module is pulled down, there is the beneficial effect for reducing thin film transistor (TFT).
Further, due to the first low-frequency clock signal LC1 and N+1 grades of GOA units of the N grades of accesses of GOA units 100
The opposite in phase of first low-frequency clock signal LC2 of 100 accesses, when LC1 and LC2 is alternately high potential, to realize timesharing
It shares, so that the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 in the drop-down maintenance module 104 of N grades of GOA units
Replacing with the 5th thin film transistor (TFT) T5 of the drop-down maintenance module 104 of N+1 grades of GOA units and the 6th thin film transistor (TFT) T6 makes
With, can to avoid thin film transistor (TFT) because long-time be in current stress effect due to fail.
It is to be appreciated that in further embodiments, as shown in figure 4, the difference of itself and embodiment one is to pull up control
Module 103, in the present embodiment, in N grades of GOA units, pull-up control module 103 includes the 9th thin film transistor (TFT) T9, the
The source electrode of nine thin film transistor (TFT) T9 is connected to N grades of grid signal point Qn.The drain electrode of 9th thin film transistor (TFT) T9 accesses high level
The grid of signal, the 9th thin film transistor (TFT) T9 is connect with N-2 grades of horizontal scanning line Gn-2.Wherein, the N grades of high frequency clock letters
Number voltage amplitude value of CKN, the range value of first low-frequency clock signal are V1, the voltage value of the high level signal be greater than or
Person is equal to V1, so that Qn, during the maximum high potential of convex shape, the leakage current for reducing the 9th thin film transistor (TFT) T9 causes N
Grade grid signal point Qn electric leakage.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (9)
1. a kind of GOA driving circuit, which is characterized in that including multiple GOA units, export gate driving according to N grades of GOA units
Signal gives N grades of display area horizontal scanning line；The GOA unit of odd level successively cascades, the GOA unit of even level successively grade
Connection；The N grades of GOA units include pull-up module, pull-down module, pull-up control module, drop-down maintenance module and bootstrapping electricity
Molar block；The pull-up module, pull-up control module, drop-down maintenance module, pull-down module and bootstrap capacitor module are connected to N
Grade grid signal point, the pull-up module, drop-down maintenance module and bootstrap capacitor module connect with N grades of horizontal scanning lines
It connects；
The drop-down maintenance module includes first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th film
Transistor, the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the 7th thin film transistor (TFT) and the 8th thin film transistor (TFT), described
The grid of one thin film transistor (TFT) connect with drain electrode and the drain electrode of the second thin film transistor (TFT) and accesses the first low frequency in the tie point
Clock signal, the drain electrode of the source electrode, third thin film transistor (TFT) of the first film transistor and the grid of the second thin film transistor (TFT)
Pole is connected to a N grades of first node SN, the source electrode of second thin film transistor (TFT), the 4th thin film transistor (TFT) drain electrode,
The grid of 5th thin film transistor (TFT) and the grid of the 6th thin film transistor (TFT) are connected to N grades of second node PN；Institute
The drain electrode of the drain electrode and the 7th thin film transistor (TFT) of stating the 5th thin film transistor (TFT) is connect with N grades of grid signal point QN, described
The drain electrode of 6th thin film transistor (TFT) and the drain electrode of the 8th thin film transistor (TFT) are connect with N grades of horizontal scanning line GN, and described
Three thin film transistor (TFT)s, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), the 7th thin film transistor (TFT) and
The source electrode of 8th thin film transistor (TFT) accesses DC low-voltage electricity VSS；
When N grades of GOA units are odd level GOA unit, N grades of first node SN connect with N+1 grades of first node SN+1
It connects, the grid of the 7th thin film transistor (TFT) and the 8th thin film transistor (TFT) of N grades of second node PN and N+1 grades of GOA units connects
It connects, the 7th thin film transistor (TFT) of N grades of GOA units and the grid and N+1 grades of second node PN+1 of the 8th thin film transistor (TFT)
Connection；
When N grades of GOA units are odd level GOA unit, the first low-frequency clock signal of N grade GOA units access and
First low-frequency clock signal opposite in phase of N+1 grades of GOA units access.
2. GOA driving circuit according to claim 1, which is characterized in that the pull-down module includes that the 11st film is brilliant
The drain electrode of body pipe, the 11st thin film transistor (TFT) is connect with the N grades of grid signals point, the 11st thin film transistor (TFT)
Source electrode access the DC low-voltage electricity VSS；The grid of the first film transistor of N grades of GOA units is swept with N+4 grades of levels
Retouch line connection.
3. GOA driving circuit according to claim 1, which is characterized in that the pull-up control module includes the 9th film
The source electrode of transistor, the 9th thin film transistor (TFT) is connected to the N grades of grid signals point；
The drain electrode of 9th thin film transistor (TFT) of N grades of GOA units accesses high level signal, the grid of the 9th thin film transistor (TFT)
It is connect with N-2 grades of horizontal scanning line Gn-2.
4. GOA driving circuit according to claim 3, which is characterized in that the pull-up module includes the tenth film crystal
The drain electrode of pipe, the tenth thin film transistor (TFT) accesses N grades of high frequency clock signal CKn, the grid of the tenth thin film transistor (TFT)
It is connect with the N grades of grid signals point Qn, the source electrode of the tenth thin film transistor (TFT) is connect with N grades of horizontal scanning lines；
The range value and the N grades of high frequency clocks of the voltage value of the high level signal, first low-frequency clock signal
The range value of signal CKn is equal.
5. GOA driving circuit according to claim 1, which is characterized in that the pull-up control module includes the 9th film
The source electrode of transistor, the 9th thin film transistor (TFT) is connected to the N grades of grid signals point；
The drain electrode of 9th thin film transistor (TFT) of N grades of GOA units is connect with N-2 grades of horizontal scanning line Gn-2 with grid.
6. GOA driving circuit according to claim 1, which is characterized in that the bootstrap capacitor module includes bootstrap capacitor.
7. GOA driving circuit according to claim 1, which is characterized in that the first low-frequency clock signal of each odd level
The GOA unit of each odd level is accessed by the first public metal wire.
8. GOA driving circuit according to claim 7, which is characterized in that the first low-frequency clock signal of each even level
The GOA unit of each even level is accessed by the second public metal wire.
9. a kind of liquid crystal display device, which is characterized in that including the described in any item GOA driving circuits of claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611067049.4A CN106448607B (en) | 2016-11-28 | 2016-11-28 | GOA driving circuit and liquid crystal display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611067049.4A CN106448607B (en) | 2016-11-28 | 2016-11-28 | GOA driving circuit and liquid crystal display device |
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| CN106448607A CN106448607A (en) | 2017-02-22 |
| CN106448607B true CN106448607B (en) | 2019-01-29 |
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| CN106652936B (en) * | 2016-12-09 | 2019-10-22 | 深圳市华星光电技术有限公司 | GOA circuit and display device |
| CN107221298B (en) * | 2017-07-12 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | A kind of GOA circuit and liquid crystal display |
| US10204586B2 (en) | 2017-07-12 | 2019-02-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Gate driver on array (GOA) circuits and liquid crystal displays (LCDs) |
| CN107221299B (en) * | 2017-07-12 | 2019-06-07 | 深圳市华星光电半导体显示技术有限公司 | A kind of GOA circuit and liquid crystal display |
| CN107452350B (en) * | 2017-08-17 | 2019-12-03 | 京东方科技集团股份有限公司 | Gate drive apparatus and display panel |
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| CN110517637B (en) | 2019-08-30 | 2021-05-25 | 京东方科技集团股份有限公司 | Shift register and driving method thereof, gate drive circuit and display panel |
| CN111128087A (en) * | 2019-11-27 | 2020-05-08 | 南京中电熊猫平板显示科技有限公司 | Grid scanning driving circuit and liquid crystal display device |
| CN111312175B (en) * | 2020-04-22 | 2020-12-25 | 南京中电熊猫液晶显示科技有限公司 | Trigger driving circuit and organic light emitting display device |
| CN112908276B (en) * | 2021-01-26 | 2022-09-23 | 昆山龙腾光电股份有限公司 | Grid driving circuit and display device |
| CN113724635A (en) * | 2021-08-18 | 2021-11-30 | 惠科股份有限公司 | Array substrate row driving circuit, array substrate and display panel |
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| CN101510416B (en) * | 2009-04-03 | 2012-02-08 | 友达光电股份有限公司 | Grid drive circuit with high reliability |
| CN103730094B (en) * | 2013-12-30 | 2016-02-24 | 深圳市华星光电技术有限公司 | Goa circuit structure |
| KR102208397B1 (en) * | 2014-08-05 | 2021-01-27 | 엘지디스플레이 주식회사 | Gate driver of display device |
| CN105405406B (en) * | 2015-12-29 | 2017-12-22 | 武汉华星光电技术有限公司 | Gate driving circuit and the display using gate driving circuit |
| CN106023933B (en) * | 2016-07-21 | 2019-02-15 | 深圳市华星光电技术有限公司 | A kind of GOA circuit and liquid crystal display |
| CN106128380B (en) * | 2016-08-16 | 2019-01-01 | 深圳市华星光电技术有限公司 | GOA circuit |
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