CN106443838B - A kind of sapphire camera eyeglass and preparation method thereof - Google Patents
A kind of sapphire camera eyeglass and preparation method thereof Download PDFInfo
- Publication number
- CN106443838B CN106443838B CN201610694763.XA CN201610694763A CN106443838B CN 106443838 B CN106443838 B CN 106443838B CN 201610694763 A CN201610694763 A CN 201610694763A CN 106443838 B CN106443838 B CN 106443838B
- Authority
- CN
- China
- Prior art keywords
- sapphire
- sapphire substrate
- photonic crystal
- mask pattern
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The invention discloses a kind of sapphire camera eyeglasses and preparation method thereof, sapphire substrate, the sapphire substrate front is equipped with antireflective nano graphic array, the sapphire backsides are equipped with central transparent area and photonic crystal ornamental area, central transparent area is arranged in the central area of sapphire backsides, photonic crystal ornamental area is located on the region between central transparent area edge and sapphire substrate edge, the antireflective nano graphic array, central transparent area and photonic crystal ornamental area constitute lens unit, first antireflective nano graphic array is made in sapphire substrate front, then central transparent area and photonic crystal ornamental area are made in the process for sapphire-based back again.The present invention has the characteristics that high-transmission rate, three-dimensional sense are strong, color and luster is abundant.
Description
Technical field
The invention belongs to the technical field of camera eyeglass, specifically one kind being mainly used in mobile phone, tablet computer
Sapphire camera eyeglass and preparation method thereof on equal mobile terminals.
Background technology
In recent years, the mobile terminals such as smart mobile phone, tablet computer have at home and abroad obtained large-scale promotion use, become
The necessary article that can not be substituted in people's life.Wherein, high pixel camera function has been the indispensable standard configuration work(of smart mobile phone
One of can, to propose the performance requirements such as high-transmission rate, high-wearing feature to mobile phone camera eyeglass.Sapphire material is due to it
Physical chemistry and the optical characteristics such as high rigidity, wear-resistant and transmission region be wide, have been used as high-end smartphones camera eyeglass
And it is used widely.In order to increase the aesthetic effect of smart mobile phone mode of appearance, manufacturer draws on mobile-phone lens in industry
All kinds of Art Designs, such as sun line, CD lines are entered.
Currently, sapphire material design and process as mobile phone camera eyeglass itself and lens surface decoration there are still
The deficiency of two aspects below：
1, the high refractive index of the refractive index n ≈ 1.5 of opposite simple glass, sapphire material reach n ≈ 1.78, high index-contrast
Higher Fresnel reflection loss is generated, to reduce the transmissivity of incident light；In addition, the influence of reflected light line was taken pictures
Journey generates glare and is imaged phenomena such as unintelligible.
2, traditional camera lens surface pattern mainly combines metal deposition process by using printing ink baking
It realizes, there are processing technology complexity, pattern is easy to fall off and the problems such as dull coloring.Further, since machining accuracy is not high, in mirror
Piece surface can not achieve size and the comparable nano-scale patterns of visible wavelength, thus, based on traditional processing technology, it is difficult to
Obtain the photonic crystal structure color that three-dimensional sense is strong, color and luster is abundant.
Invention content
The technical problem to be solved in the present invention is to provide a kind of sapphire camera eyeglasses and preparation method thereof, have high saturating
Penetrate the feature that rate, three-dimensional sense are strong, color and luster is abundant.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme：
A kind of sapphire camera eyeglass, including sapphire substrate, the sapphire substrate front are equipped with antireflective nano
Graphic array, the sapphire backsides are equipped with central transparent area and photonic crystal ornamental area, and central transparent area setting is carried on the back in sapphire
The central area in face, photonic crystal ornamental area are located on the region between central transparent area edge and sapphire substrate edge, should
Antireflective nano graphic array, central transparent area and photonic crystal ornamental area constitute lens unit.
The central transparent area is rounded, and photonic crystal ornamental area is arranged in circular, the internal diameter of photonic crystal ornamental area
Equal to the diameter of central transparent area, the outer diameter of photonic crystal ornamental area is equal to the diameter of sapphire substrate.
The period of photonic crystal is 300nm~10 μm in the photonic crystal ornamental area, is highly 100nm~2 μm.
The cross-sectional morphology of the photonic crystal ornamental area includes but not limited to triangle, trapezoidal or rectangle.
The antireflective nano graphic array is arranged for periodic regular or quasi periodic regular array, and the antireflective
The arest neighbors spacing of nano graph array is 50nm~300nm, is highly 50nm~500nm.
The pattern of the antireflective nano graphic array include but not limited to cone, paraboloid or have graded index
Moth ocular structure.
A diameter of 3mm~18mm of the central transparent area, a diameter of 4mm~24mm of sapphire substrate, process for sapphire-based
The thickness of plate is 0.2mm~0.7mm.
A kind of preparation method of sapphire camera eyeglass, includes the following steps：
S1 chooses the sapphire substrate of twin polishing, is cleaned；
S2 forms mask pattern, a diameter of 50nm~300nm of mask pattern, mask pattern in sapphire substrate front
Arest neighbors spacing be 50nm~300nm；
Mask pattern is transferred to process for sapphire-based plate surface, forms antireflective nano graphic array, the antireflective nano by S3
The pattern of graphic array is that cone, paraboloid or the moth ocular structure with graded index, the height of nano graph array are
50nm~500nm；
S4, the sapphire substrate to being formed with antireflective nano graphic array cleans, in the back of the body of the sapphire substrate
Face coats photoresist layer；
S5 forms photo-resistive mask figure in photoresist layer surface, which includes the center covered by photoresist layer
Photonic crystal mask pattern region without graphics field and edge period annular shape；
S6, by photo-resistive mask pattern transfer to process for sapphire-based back, by the center of photoresist layer covering without graphics field shape
At central transparent area, photonic crystal mask pattern region then forms circular photonic crystal ornamental area, the annular shape photonic crystal
The cross-sectional morphology of ornamental area includes but not limited to triangle, trapezoidal or rectangle, the height of the annular shape photonic crystal ornamental area
For 100nm~2 μm；
S7 carries out scribing cutting to sapphire substrate, obtains sapphire camera lens unit.
In the step S2, using nano impression mode, self-assembly for nanosphere mode or anodised aluminium mode blue precious
Stone front forms mask pattern；In step S3, using plasma dry etching or reactive ion beam etching (RIBE) method are by mask figure
Shape is transferred to sapphire substrate front.
In the step S5, using nano impression mode, coining mode or photolithographicallpatterned sapphire substrate back side shape
At photo-resistive mask figure；In step S6, using plasma dry etching or reactive ion beam etching (RIBE) mode are by photo-resistive mask figure
Shape is transferred to process for sapphire-based back.
The present invention is by having the advantages that：
1, antireflective nano graphic array structure is introduced in sapphire lens surface, the transmissivity of incident light can be increased,
And reduce the interference strength of reflected light, to be more advantageous to improvement take pictures quality and improve imaging definition.
2, photon crystal structure, the riot of color knot that photonic crystal diffraction effect generates are introduced in sapphire lens edge
Structure color forms three-dimensional colorful effect, the effect for increasing cell phone appearance aesthetic feeling, finding everything fresh and new to people.
Description of the drawings
Attached drawing 1 is cross-sectional view of the present invention；
Attached drawing 2 is the schematic top plan view at the lens unit back side in the present invention；
Attached drawing 3 is the structural schematic diagram that multiple lens units are arranged on sapphire substrate of the present invention；
Attached drawing 4 is the preparation flow schematic diagram of the method for the present invention.
Specific implementation mode
For the ease of the understanding of those skilled in the art, the invention will be further described below in conjunction with the accompanying drawings.
As shown in figure 1 and 2, described present invention is disclosed a kind of sapphire camera eyeglass, including sapphire substrate 2
2 front of sapphire substrate is equipped with antireflective nano graphic array 1, which is equipped with central transparent area 4 and photonic crystal
Ornamental area 3, central transparent area are arranged in the central area of sapphire backsides, and photonic crystal ornamental area is located at central transparent area edge
On region between sapphire substrate edge, the antireflective nano graphic array 1, central transparent area 4 and photonic crystal decoration
Area 3 constitutes lens unit 10.Central transparent area is rounded, and photonic crystal ornamental area is arranged in circular, and usually by multiple
Round shape distribution is arranged, and the spacing distance between each annulus can be impartial, can not also be impartial, can also phase for the thickness of each annulus
Same or different, the internal diameter of photonic crystal ornamental area is equal to the diameter of central transparent area, and the outer diameter of photonic crystal ornamental area is equal to
The diameter of sapphire substrate.Multiple lens units 10, adjacent lens unit can be set simultaneously on the same sapphire substrate 2
Between can be according to certain intervals apart from regular array, or irregular arrangement.
In addition, in photonic crystal ornamental area photonic crystal period be 300nm~10 μm, be highly 100nm~2 μm.Light
The cross-sectional morphology of sub- crystal ornamental area include triangle, the class triangle with side wall radian, trapezoidal or rectangle or other
Shape has no specific restriction herein.
Antireflective nano graphic array be periodic regular arrange or quasi periodic regular array, and the period be 50nm~
300nm is highly 50nm~500nm.The pattern of antireflective nano graphic array include cone, director circle cone, paraboloid or
Moth ocular structure with graded index or other.
In addition, a diameter of 3mm~18mm of central transparent area, a diameter of 4mm~24mm of sapphire substrate, process for sapphire-based
The thickness of plate is 0.2mm~0.7mm, and sapphire diameter can flexibly be chosen according to the specification of mobile lens.
By invention by antireflective nano graphic array, increase the transmissivity of incident light, and reduce the interference of reflected light
Intensity, to be more advantageous to improvement take pictures quality and improve imaging definition；And photonic crystal ornamental area, spread out using photonic crystal
The riot of color schemochrome for penetrating effect generation forms three-dimensional colorful effect, increases cell phone appearance aesthetic feeling, find everything fresh and new to people
Effect.
On the other hand, present invention further teaches a kind of preparation methods of sapphire camera eyeglass, below by specific
Implement the preparation method to be described in detail.
Embodiment one
A kind of preparation method of sapphire camera eyeglass, using nano impression mode combination dry plasma etch mode
Prepare sapphire camera eyeglass, wherein the arest neighbors spacing of antireflective nano graphic array is 50nm~300nm, photon is brilliant
The period of body is that 300nm~2 μm specifically include following steps as shown in Fig. 3：
2~4 inches of sapphire substrate 2 is carried out twin polishing, the sapphire substrate thickness control after polishing by S1 first
In 0.2mm~0.7mm, the pollutant of cleaning removal process for sapphire-based plate surface.
S2 is suitable for the photoresist layer 5 of ultraviolet nanometer coining in the positive spin coating of sapphire substrate 2, and the thickness of photoresist layer is
100nm~600nm, the thickness of the photoresist layer depend on the height of the etch resistance energy and antireflective nano figure protrusion of glue itself
Degree；Sapphire substrate with photoresist layer is put on the coining platform of nano-imprinting apparatus, into nano-imprint process link,
Go out the cylindrical nanometer grade mask pattern 6 consistent with template graphics size in sapphire substrate copying surface, the mask pattern
The arest neighbors spacing of a diameter of 50nm, mask pattern are 100nm.
Sapphire substrate 2 with cylindrical nanometer grade mask pattern 6 is put into plasma by S3（ICP）In equipment into
Row dry etching prepares antireflective nano graphic array 1 in sapphire surface, and the pattern of the antireflective nano graphic array is circle
The height of cone, the antireflective nano graphic array is 50nm.
S4 cleans the sapphire substrate 2 with antireflective nano graphic array 1, and in the back of the body of sapphire substrate 2
Face spin coating photoresist layer 7.
Sapphire substrate 2 is put into nano-imprinting apparatus by S5, using nano impression mode sapphire substrate 2 the back of the body
Photo-resistive mask figure 8 is prepared in face, which includes the center that is covered by photoresist layer without graphics field and edge week
The photonic crystal mask pattern region of phase property annular shape；
Sapphire substrate is put into plasma apparatus and carries out dry etching by S6, by the center of photoresist layer covering without figure
Shape region forms central transparent area 4, prepares circular ring shape photon crystal structure in sapphire surface and forms circular photonic crystal
Ornamental area 3, the photonic crystal cross-sectional morphology are triangle, and the height of circular photonic crystal ornamental area is 1 μm of 100nm-.
S7 after being cleaned to sapphire substrate, carries out laser scribing cutting, obtains sapphire lens unit.
Embodiment two
Sapphire is realized using self-assembly for nanosphere mode, stepper litho mode binding plasma dry etching mode
The method of camera eyeglass is prepared wherein independently filling mode binding plasma dry etching mode using nanosphere between arest neighbors
Away from the antireflective nano graphic array for 100nm -300nm, use stepper litho mode manufacturing cycle for 2 μm -10 μm
Photon crystal structure specifically includes following preparation process：
2~4 inches of sapphire substrate is carried out twin polishing by S1, and the sapphire substrate thickness control after polishing exists
0.2mm~0.7mm, cleaning remove the pollutant of the process for sapphire-based plate surface.
S2, first by the SiO of a diameter of 100nm~300nm2Nanometer ball material is diluted in organic solvent, and controls SiO2
Concentration, the ratio of nanosphere；Then sapphire substrate inclination is immersed into solvent, using solution evaporation or stretches process for sapphire-based
The mode of plate deposits one layer of single layer SiO in sapphire substrate front2Hexagonal closely packed paracycle is presented in nanosphere, nanosphere
Arrangement, SiO2Nanometer bead serves as the effect of mask pattern in etching process.
Sapphire substrate with SiO2 nanometers of beads is put into plasma by S3（ICP）Dry etching is carried out in equipment,
Antireflective nano graphic array is prepared in sapphire surface, which is paraboloid, antireflective nano figure
The height of shape array is 300 nm.
S4 cleans the sapphire substrate with antireflective nano graphic array, and at the back side of sapphire substrate
Spin coating photoresist layer.
Sapphire substrate is put into Stepper lithographic equipments by S5, using step printing mode in sapphire substrate
Photo-resistive mask figure is prepared at the back side, which includes the center that is covered by photoresist layer without graphics field and edge week
The photonic crystal mask pattern region of phase property annular shape.
Sapphire substrate is put into plasma apparatus and carries out dry etching by S6, by the center of photoresist layer covering without figure
Shape region forms central transparent area, and preparing circular ring shape photon crystal structure in sapphire surface forms circular photonic crystal dress
Area is adornd, which is the class triangle with side wall radian, pattern height 500nm -2 μm.
S7 after being cleaned to sapphire substrate, carries out laser scribing cutting, obtains sapphire lens unit.
Embodiment three
Using anodised aluminium（AAO）Mode, stepper litho mode binding plasma dry etching mode realize indigo plant
The method of jewel camera eyeglass, wherein preparing arest neighbors spacing using AAO skill mode binding plasma dry etching modes
For the antireflective nano figure array of protrusions of 100nm~300nm, use stepper litho technology manufacturing cycle for 2 μm~10 μm
Photoresist crystal structure, specifically include following preparation process：
2~4 inches of sapphire substrate is carried out twin polishing by S1, and the sapphire substrate thickness control after polishing exists
0.2mm~0.7mm, cleaning remove the pollutant of the process for sapphire-based plate surface.
S2, using anodised aluminium（AAO）Mode prepares the AAO film layers that arest neighbors spacing is 100nm~300nm；
AAO film layers and aluminium substrate are separated by the way of corrosion, and carry out through hole reason；AAO film layers are attached to sapphire
Below substrate, etch mask figure is served as.
Sapphire substrate with AAO films is put into plasma by S3（ICP）Dry etching is carried out in equipment, in indigo plant
Jewel front prepares antireflective nano graphic array, and the pattern of the antireflective nano graphic array is the director circle cone stood upside down, and is subtracted
The height of reflective nano graphic array is 500 nm.
S4 cleans the sapphire substrate with antireflective nano graphic array, and at the back side of sapphire substrate
Spin coating photoresist layer.
Sapphire substrate is put into Stepper lithographic equipments by S5, using step printing mode in sapphire substrate
Photo-resistive mask figure is prepared at the back side, which includes the center that is covered by photoresist layer without graphics field and edge week
The photonic crystal mask pattern region of phase property annular shape.
Sapphire substrate is put into plasma apparatus and carries out dry etching by S6, by the center of photoresist layer covering without figure
Shape region forms central transparent area, and preparing circular ring shape photon crystal structure in sapphire surface forms circular photonic crystal dress
Area is adornd, which is trapezoidal, and pattern height is 2 μm of 100nm-.
S7 after being cleaned to sapphire substrate, carries out laser scribing cutting, obtains sapphire lens unit.
In addition, can also be moth ocular structure or other shapes with graded index for antireflective nano graphic array
The cross-sectional morphology of shape, circular photonic crystal ornamental area can also be rectangle or other shapes.
It should be noted that described above is not the restriction to technical solution of the present invention, in the wound for not departing from the present invention
Under the premise of making design, any obvious replacement is within protection scope of the present invention.
Claims (3)
1. a kind of preparation method of sapphire camera eyeglass, includes the following steps：
S1 chooses the sapphire substrate of twin polishing, is cleaned；
S2 forms mask pattern in sapphire substrate front, and a diameter of 50nm~300nm of mask pattern, mask pattern is most
Neighbour's spacing is 50nm~300nm；
Mask pattern is transferred to process for sapphire-based plate surface, forms antireflective nano graphic array, the antireflective nano figure by S3
The pattern of array is cone, paraboloid or the moth ocular structure with graded index, and the height of nano graph array is 50nm
~500nm；
S4, the sapphire substrate to being formed with antireflective nano graphic array clean, and are applied at the back side of the sapphire substrate
Cover photoresist layer；
S5 forms photo-resistive mask figure in photoresist layer surface, which includes the center that is covered by photoresist layer without figure
The photonic crystal mask pattern region in shape region and edge period annular shape；
S6, by photo-resistive mask pattern transfer to process for sapphire-based back, in being formed without graphics field by the center that photoresist layer covers
Heart transparent area, photonic crystal mask pattern region then form circular photonic crystal ornamental area, annular shape photonic crystal decoration
The cross-sectional morphology in area includes triangle, trapezoidal or rectangle, and the height of the annular shape photonic crystal ornamental area is 100nm~2 μm；
S7 carries out scribing cutting to sapphire substrate, obtains sapphire camera lens unit.
2. the preparation method of sapphire camera eyeglass according to claim 1, which is characterized in that in the step S2,
Mask pattern is formed in sapphire front using nano impression mode, self-assembly for nanosphere mode or anodised aluminium mode；Step
In rapid S3, mask pattern is being transferred to sapphire substrate just by using plasma dry etching or reactive ion beam etching (RIBE) method
Face.
3. the preparation method of sapphire camera eyeglass according to claim 2, which is characterized in that in the step S5,
Photo-resistive mask figure is formed at the back side of sapphire substrate using nano impression mode or photolithographicallpatterned；In step S6, using etc.
Gas ions dry etching or reactive ion beam etching (RIBE) mode are by photo-resistive mask pattern transfer to process for sapphire-based back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610694763.XA CN106443838B (en) | 2016-08-22 | 2016-08-22 | A kind of sapphire camera eyeglass and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610694763.XA CN106443838B (en) | 2016-08-22 | 2016-08-22 | A kind of sapphire camera eyeglass and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106443838A CN106443838A (en) | 2017-02-22 |
| CN106443838B true CN106443838B (en) | 2018-11-13 |
Family
ID=58181265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610694763.XA Active CN106443838B (en) | 2016-08-22 | 2016-08-22 | A kind of sapphire camera eyeglass and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106443838B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561611B (en) * | 2017-08-04 | 2020-04-28 | 东莞市中图半导体科技有限公司 | Surface patterning processing method of sapphire substrate |
| TWI777542B (en) * | 2020-12-23 | 2022-09-11 | 大立光電股份有限公司 | Imaging lens assembly and electronic device |
| CN114488362A (en) * | 2022-01-19 | 2022-05-13 | 中国科学院上海光学精密机械研究所 | Sapphire window with double-sided anti-reflection microstructure and preparation method thereof |
| CN115595546A (en) * | 2022-10-25 | 2023-01-13 | 中物院成都科学技术发展中心（Cn） | Film coating device and method for sapphire sheet film coating |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308219B (en) * | 2008-06-27 | 2010-09-08 | 吉林大学 | Method for constructing anti-reflection microstructure using single layer nanometer particle as etching blocking layer |
| CN103605215B (en) * | 2013-10-22 | 2015-01-28 | 东南大学 | One-dimensional photonic crystal-based colorful contact lenses and preparation method thereof |
| CN205407917U (en) * | 2016-03-10 | 2016-07-27 | 东莞市富饶光电有限公司 | Camera protects mirror with CD line effect |
| CN105676589A (en) * | 2016-03-25 | 2016-06-15 | 南京京晶光电科技有限公司 | Method for processing compact disc (CD) stripe on substrate surface by applying etching process |
-
2016
- 2016-08-22 CN CN201610694763.XA patent/CN106443838B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106443838A (en) | 2017-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106443838B (en) | A kind of sapphire camera eyeglass and preparation method thereof | |
| CN109328314A (en) | Optical devices, display body, the manufacturing method of the device with display body, optical filtering and Optical devices | |
| CN1985208B (en) | Tinted contact lenses with combined limbal ring and iris patterns | |
| CN112634740B (en) | Manufacturing method and application of non-replicable perovskite fluorescent anti-counterfeiting label | |
| JP2011032159A (en) | Method for producing functional surface | |
| CN108241185A (en) | Micro nano structure optical element and preparation method and application | |
| JP2009128538A (en) | Method for manufacturing antireflection structure | |
| CN208705505U (en) | A kind of integral type lenticule being integrated with optically focused and filtering functions | |
| CN109346618A (en) | OLED display and preparation method thereof | |
| CN113068347A (en) | Cover plate, electronic equipment and preparation method of cover plate | |
| CN100419951C (en) | Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement | |
| CN106098963B (en) | Optical thin film and preparation method thereof with random pyramid pattern matte | |
| JP2009128539A (en) | Method for manufacturing antireflection structure | |
| KR20120131392A (en) | Method for Manufacturing Lens Stamp And Lens Stamp | |
| CN110456555B (en) | Color filter and preparation method thereof | |
| CN104364676A (en) | Lens with pattern and method for manufacturing same | |
| WO2018103142A1 (en) | Decorative sheet for changing spot light into dazzle light and production process | |
| KR20190050158A (en) | A method of manufacturing sunglasses with pattern by using laser etching | |
| JP2009128541A (en) | Method for manufacturing antireflection structure | |
| CN102473531A (en) | Dye sensitized solar cell with improved optical characteristics | |
| CN113970809A (en) | Waveguide lens with inclined nano structure and manufacturing method thereof | |
| JP2009128540A (en) | Method for manufacturing antireflection structure | |
| CN205992063U (en) | A kind of sapphire photographic head eyeglass | |
| CN208737029U (en) | A kind of changeable reflective fabric of phantom | |
| CN103682013B (en) | A kind of method preparing nanoscale spheroplast structure at LED surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Songshan Lake Industrial two North Road 523000 Guangdong city of Dongguan province No. 4 Patentee after: Guangdong Zhongtu Semiconductor Technology Co., Ltd Address before: Songshan Lake Industrial two North Road 523000 Guangdong city of Dongguan province No. 4 Patentee before: DONGGUAN SINOPATT SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |