CN108241185A - Micro nano structure optical element and preparation method and application - Google Patents
Micro nano structure optical element and preparation method and application Download PDFInfo
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- CN108241185A CN108241185A CN201611217866.3A CN201611217866A CN108241185A CN 108241185 A CN108241185 A CN 108241185A CN 201611217866 A CN201611217866 A CN 201611217866A CN 108241185 A CN108241185 A CN 108241185A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The present invention provides a kind of micro nano structure optical element and preparation method and application, the micro nano structure optical element is characterized in forming back taper micro nano structure array in transparent rigid substrate, the micro nano structure optical element not only has wide spectrum wide-angle antireflection characteristic, also with higher mechanical strength.The micro nano structure optical element can also light refractive indexes different from one or more layers material combine, realize the wide spectrum wide-angle anti-reflective effect to incident light selectivity.The present invention combines the graded index of 3-D nano, structure, the mechanical stability of inverted cone-shaped structure and the regulation and control of optically coated spectrum, can obtain selective wide spectrum wide-angle antireflective and the optical element with more high mechanical properties.The novel optical element that the present invention obtains has broad application prospects in fields such as illumination, display, thermoelectricity, photocatalysis, photovoltaics.
Description
Technical field
The present invention relates to micro Process manufacturing technology field, more particularly to a kind of micro nano structure optical element and its preparation
Method and application.
Background technology
Anti-reflection antireflective coating is with its excellent optical property in fields such as illumination, display, lenticule, photovoltaic, showcase glass
All it is widely used.Conventional anti-reflection antireflective coating preparation method is to deposit one layer of certain thickness low refraction in device surface
Rate material (such as silica, silicon nitride and magnesium fluoride).This antireflective coating can only often be inhibited using delustring principle is interfered
The reflection of relatively narrow wavelength bands.If you need to the antireflective antireflective effect of wide spectrum, the multilayer film of different-thickness and material system need to be just deposited,
Cause complex process, it is expensive.It, can there are materials in addition, the material of this film plating process deposition is generally different from base material
During preparation or long-time use, easily there is obscission in thermal mismatching and stress mismatch between material, and reliability is poor.
Another method is the biomimetic features using moth eyes, and three-dimensional manometer circular cone array is constructed in substrate surface, this
Kind of structure provides the effective refractive index of graded for material surface, with respect to film plating process, subtracts with wide spectrum, extensive angle
The characteristics of reflecting and be more inexpensive.Such as patent " wide spectrum wide-angle antireflection polymer nano bionic membrane and preparation method thereof
(CN102250377A) " wide spectrum wide-angle antireflection macromolecule membrane has been constructed.Although such film has excellent optics spy
Property, but since high molecular material mechanical strength is poor, the application fields such as touch screen, photovoltaic panel can not be met.Article
“Patterning of light-extraction nanostructures on sapphire substrates using
nanoimprint and ICP etching with different masking materials(Nanotechnology
26 (2015) 085302) " using nanometer embossing, and successively deposit SiO2With Cr layers, finally with SiO2It is mask in sapphire
On etch periodic nano-cone array.Above-mentioned nanocone is used as the substrate of LED epitaxial growths, improves out light efficiency
Rate.Author does not characterize the optical characteristics of substrate, and theoretically its structure can inhibit the reflection of light.This method complex process, and
The nanocone of acquisition is mutual indepedent, although mechanical strength is improved relative to polymer, but still difficulty meets actual demand.Exist simultaneously
Display and illumination field, it is also necessary to blue violet light be inhibited to penetrate, reduce the injury to human eye.And traditional three-dimensional micro-nano structure is wide
Antireflective that spectrum is anti-reflection can equally increase the transmission of blue violet light.
Based on the above, a kind of transmission and reflection that there are high mechanical properties, can realize regulation and control specific wavelength is provided
Micro nano structure optical element and preparation method thereof be necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of micro nano structure optical elements
And preparation method and application, to realize that a kind of three-dimensional manometer built in rigid transparent substrates using micro-nano technology means is fallen
Pyramidal structure compared with traditional nanocone (moth eye) structure, has superior mechanical strength and weatherability, this nanometer of back taper
Shape structure can be combined with optical coating, form composite construction, realize the transmission and reflection of regulation and control specific wavelength, in illumination, show
Show, thermoelectricity, photocatalysis, the fields such as photovoltaic have broad application prospects.
In order to achieve the above objects and other related objects, the present invention provides a kind of micro nano structure optical element, described micro-
Nanostructured optical elements include：Transparent rigid substrate and be formed in the transparent rigid substrate surface back taper it is micro-nano
Array of structures, the back taper micro nano structure array have the anti-reflection antireflection characteristic of wide spectrum wide-angle and high mechanical properties.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure array
Surface is also formed with the optical material layer of different light refractive indexes more than one or two layers, to realize to incident light selectivity
Wide spectrum wide-angle anti-reflective effect.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure are put down
Face size range is 100nm~10 μm.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure array
Include back taper groove structure array.
Further, in the back taper micro nano structure array, the carrier material at the top of each back taper micro nano structure
It interconnects so that the back taper micro nano structure array has high mechanical properties.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure array
For periodic ordered structure or random disordered structure.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the transparent rigid substrate include glass
One kind in glass, sapphire, quartz, gallium nitride, silicon carbide.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure array
Carrier be transparent rigid substrate in itself or be the Coating Materials deposited in the transparent rigid substrate or be the plating membrane material
The combination of material and the transparent rigid substrate, the Coating Materials include silica, tantalum oxide, aluminium oxide, silicon nitride, magnesium fluoride
With the combination of one or more of lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the back taper micro nano structure array
It is formed in the one side of the transparent rigid substrate or is formed in the opposite two sides of the transparent rigid substrate.
A kind of preferred embodiment of micro nano structure optical element as the present invention, the transparent rigid substrate include plane
One kind in structure or curved-surface structure.
The present invention also provides a kind of preparation method of micro nano structure optical element, including step：Step 1) provides one thoroughly
Bright rigid basement；Step 2) forms patterned mask material using micro-nano technology means in the transparent rigid substrate surface；
Step 3), using wet-etching technology and/or dry etch process in preparing back taper micro-nano in the transparent rigid substrate
Rice array of structures, the back taper micro nano structure array have the anti-reflection antireflection characteristic of wide spectrum wide-angle and high machinery by force
Degree.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention in step 1), also wraps
Include in the transparent rigid substrate surface make Coating Materials the step of；Mask material in step 2) is formed in the plating membrane material
Expect surface；Back taper micro nano structure array in step 3) is formed in the Coating Materials or is formed simultaneously in the plating
In membrane material and the transparent rigid substrate.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, further includes step 4),
In the heteropleural of the surface of the back taper micro nano structure array and/or the back taper micro nano structure array deposit one layer or
The optical material layer of more than two layers of different light refractive indexes, the optical material layer and the back taper micro nano structure array
Compound back taper micro nano structure array is formed, to the reflection and transmission spectrum coordinated regulation of incident light.
Further, optical material layer of the optical material layer for different light refractive indexes more than one or two layers,
Including silica, tantalum oxide, aluminium oxide, silicon nitride, magnesium fluoride and lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide one
The lamination of kind or two or more compositions.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, step 1) further include pair
The transparent rigid substrate carries out the step of cleaning and technics of enhancing viscosity.
Preferably, the cleaning is included in liquid phase cleaning, gas phase cleaning and ultraviolet lighting cleaning
One or more kinds of combinations.
Further, the gas phase cleaning includes one kind in gaseous plasma cleaning and ozone clean, clearly
The transparent rigid substrate surface is activated while washing, to improve the transparent rigid substrate and subsequent technique film
Binding force.
Further, substrate of glass respectively cleans it using acetone, ethyl alcohol and water；Sapphire substrates are adopted
With dense H2SO4And H2O2Mixed solution it is cleaned.
Preferably, the technics of enhancing viscosity is included in the transparent rigid substrate surface formation polymer, metal or oxide
In one kind, including using gas-phase deposition deposit hexamethyldisilazane HMDS, using the poly- methyl-prop of spin coating proceeding spin coating
E pioic acid methyl ester PMMA or hmds HMDS.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, the mask material of step 2)
Material includes one kind in uv-curable glue and heat-curable glue, is coated by the way of spin coating, blade coating, printing, printing.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, the micro-nano technology hand
Section includes one kind in ultraviolet photolithographic, electron beam exposure, nano impression, interference lithography, printing, printing, patterned to be formed
Mask material.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, the wet etching work
Skill includes one kind in isotropic corrosion and anisotropic corrosion.
Further, for substrate of glass, corrosive liquid HF, NH4F and H2The mixed liquor of O compositions, corrosion temperature is room temperature；
For sapphire substrates, corrosive liquid H2SO4And H3PO4The mixed liquor of composition, corrosion temperature control are 240~320 DEG C.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, the dry etching skill
Art includes one kind in ion beam etching, reactive ion etching, inductively coupled plasma etching, laser ablation.
Further, it for substrate of glass, using reactive ion etching, etches the gas used and includes CF4、SF6And He,
It is no more than 600W to etch power；For sapphire substrates, using inductively coupled plasma etching, etching gas includes
BCl3And Cl2, one kind in Ar, HBr and two or more combinations.
A kind of preferred embodiment of the preparation method of micro nano structure optical element as the present invention, it is described patterned to cover
Membrane material is the mask material for including bowl configurations or column structure.
Preferably, the wet-etching technology and/or dry etch process are directly on the mask material of bowl configurations
Direct etching, in transparent rigid substrate, Coating Materials or simultaneously in the Coating Materials and the transparent rigid substrate
Obtain the anti-reflection anti-reflection structure of back taper micro nano structure array.
Preferably, the wet-etching technology and/or dry etch process include：First in the mask material of column structure
The second mask layer of upper deposition, subsequent selective removal mask material retain latticed second mask layer and are performed etching as mask,
To obtain back taper in transparent rigid substrate, Coating Materials or simultaneously in the Coating Materials and the transparent rigid substrate
Micro nano structure array is anti-reflection anti-reflection structure.
Further, second mask layer includes one kind in metal layer and compound layer, the metal layer include tantalum,
One kind in chromium, aluminium, the compound layer include one kind in aluminium oxide, silica, silicon nitride.
The present invention also provides a kind of application of micro nano structure optical element, the micro nano structure optical element application
In photophore and display.
A kind of preferred embodiment of the application of micro nano structure optical element as the present invention, the micro nano structure optics
Element acts synergistically with photophore and display, inhibits the transmission of blue violet light, while increase the transmission of long wavelength, to reduce to people
The injury of stereoscopic nethike embrane, while the brightness of photophore and display is improved, inhibit dazzle.
A kind of preferred embodiment of the application of micro nano structure optical element as the present invention, for the display, institute
The period for stating the back taper micro nano structure array of micro nano structure optical element is below 400nm；It is described micro- for photophore
The period of the back taper micro nano structure array of nanostructured optical elements is not limited to below 400nm.
As described above, micro nano structure optical element of the present invention and preparation method and application, has below beneficial to effect
Fruit：
1) present invention utilizes the micro-nano technologies such as ultraviolet photolithographic, electron beam exposure, nano impression, interference lithography, printing, printing
Means realize the preparation of the anti-reflection anti-reflection structure of the micro-nano array of back taper, have reached the anti-reflection antireflective of wide spectrum, extensive angle
Purpose.
2) the carrier selection of the back taper micro nano structure array prepared by is freer, can be transparent rigid substrate sheet
Body or the other materials deposited in substrate, such as silica, aluminium oxide, silicon nitride, magnesium fluoride, lithium fluoride, carbonization
Silicon, gold, silver, titanium oxide, zinc oxide etc..
3) manufacturing cost of back taper micro-nano structure array is low, and characteristic size can controllably be adjusted between 100nm to 10 μm
Section.Such as in display, show window, the application of showcase field, periodic dimensions are in below 400nm；Such as in illumination or photovoltaic application field,
Size can be not necessarily limited to below 400nm.
4) the back taper micro-nano structure array prepared by compared with traditional nanocone (moth eye) structure, has more excellent
Mechanical strength and weatherability.
5) the back taper nanometer antireflection structure prepared by, can also be combined with optical coating, realize specific band, difference
The anti-reflection effect of spectral width.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of the micro nano structure optical element of the present invention.
Fig. 2 a~Fig. 2 f are the morphology characterization figure for the result that each step obtains and the sample being prepared in embodiment 1
Light transmission rate performance chart.Wherein, Fig. 2 a are back taper micro nano structure array schematic diagram, and 21 be the micro-nano knot of back taper
Structure array, 22 be sapphire cover board, and Fig. 2 b are the shape appearance figure of nickel caster in second step, and Fig. 2 c are flexible polymeric film shape appearance figure,
Fig. 2 d are imprint result shape appearance figure in third step, and Fig. 2 e are that result shape appearance figure is etched in the 4th step, and 23 be back taper groove structure,
24 be the carrier material at the top of each back taper groove structure, and Fig. 2 f are the light transmission rate performance chart of sample in the 5th step.
Fig. 3 a~Fig. 3 f are the morphology characterization figure for the result that each step obtains and the sample being prepared in embodiment 2
Light transmission rate performance chart.Wherein, Fig. 3 a are back taper micro nano structure array schematic diagram, and 31 be SiO2Film plating layer, 32
For sapphire cover board, Fig. 3 b are the shape appearance figure of nickel caster in second step, and Fig. 3 c are flexible polymeric film shape appearance figure, and Fig. 3 d are third
Imprint result shape appearance figure in step, Fig. 3 e are that result shape appearance figure is etched in the 4th step, and Fig. 3 f are the light transmission rate of sample in the 5th step
Performance chart.
Fig. 4 a~Fig. 4 g are the morphology characterization figure for the result that each step obtains and the sample being prepared in embodiment 3
Light transmission rate performance chart.Wherein, Fig. 4 a are glass cover-plate schematic diagram, and 42 be glass cover-plate, and 41 and 43 be two-sided back taper
Shape micro nano structure array, Fig. 4 b are back taper micro nano structure array schematic diagram, and 44 and 46 be the micro nano structure of back taper
Array, 45 be glass cover-plate, and Fig. 4 c are the shape appearance figure of nickel caster in second step, and Fig. 4 d are flexible polymeric film shape appearance figure, Fig. 4 e
For imprint result shape appearance figure in third step and the 4th step, Fig. 4 f are that result shape appearance figure is etched in the 5th step, and Fig. 4 g are in the 6th step
The light transmission rate performance chart of sample.
Fig. 5 a~Fig. 5 c are the flow chart of 4 each processing step of embodiment.Wherein, Fig. 5 a are the moulding process signal of third step
Figure, 51 be coining mantle, and 52 be the coining glue of spin coating, and 53 be curved substrate；Fig. 5 b are result schematic diagram after third step demoulding；
Fig. 5 c are the back taper micro nano structure array in curved substrate for result schematic diagram after the 4th step etching, 54.
Fig. 6 a~Fig. 6 d are the pattern schematic diagram of the result that each step obtains in embodiment five.Wherein, Fig. 6 a are graphical
Sapphire structures schematic diagram, 61 be back taper micro nano structure array, and 62 be Sapphire Substrate, and Fig. 6 b are mask in second step
Schematic diagram, 63 be light tight region, and 64 be transmission region, and Fig. 6 c are structure and morphology schematic diagram after third step ultraviolet photolithographic, and 65 are
Cylindrical array of structures, 66 be Sapphire Substrate, and Fig. 6 d are to deposit SiO in the 4th step2Pattern schematic diagram after layer, 67 be grid
The SiO of shape2Film layer, 68 be exposed Sapphire Substrate.
Fig. 7 a~Fig. 7 c are the pattern schematic diagram for the result that each step obtains and the sample being prepared in embodiment six
Light transmission rate performance chart.Wherein, Fig. 7 a be ultraviolet light filter structure schematic representation, 71 be the first optical material layer, 72
It is Sapphire Substrate layer for back taper micro nano structure array, 73,74 be the second optical material layer, after Fig. 7 b is third step etchings
Structure and morphology schematic diagram, Fig. 7 c are the light transmission rate performance chart of sample in the 6th step.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Fig. 7 c.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in illustrating then
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout form may also be increasingly complex.
The present invention provides a kind of micro nano structure optical element, and the micro nano structure optical element includes：Transparent rigid
Substrate and the back taper micro nano structure array for being formed in the transparent rigid substrate surface, the back taper micro nano structure
Array has the anti-reflection antireflection characteristic of wide spectrum wide-angle and high mechanical properties.
As an example, the back taper micro nano structure array surface is also formed with different optics more than one or two layers
The optical material layer of refractive index, to realize the wide spectrum wide-angle anti-reflective effect to incident light selectivity.
As an example, planar dimension ranging from 100nm~10 μm of the back taper micro nano structure.
As an example, the back taper micro nano structure array includes back taper groove structure array.Further, it is described
In back taper micro nano structure array, the carrier material at the top of each back taper micro nano structure interconnects so that institute
Back taper micro nano structure array is stated with high mechanical properties.
As an example, the back taper micro nano structure array is periodic ordered structure or random disordered structure.
As an example, the transparent rigid substrate includes one kind in glass, sapphire, quartz, gallium nitride, silicon carbide.
As an example, the carrier of the back taper micro nano structure array is transparent rigid substrate in itself or is described
The Coating Materials that is deposited in bright rigid basement is the Coating Materials and the basic combination of the transparent rigid, the plated film
Material includes silica, tantalum oxide, aluminium oxide, silicon nitride, magnesium fluoride and lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide
One or more of combination.
As an example, the back taper micro nano structure array is formed in the one side of the transparent rigid substrate or is formed
In the opposite two sides of the transparent rigid substrate.
As an example, the transparent rigid substrate includes one kind in planar structure or curved-surface structure.
One idiographic flow of the preparation method of the micro nano structure optical element of the present invention is as shown in Figure 1, the present invention carries
For a kind of preparation method of micro nano structure optical element, including step：
Step 1) provides a transparent rigid substrate.
As an example, step 1) further includes the step of carrying out cleaning and technics of enhancing viscosity to the transparent rigid substrate.
Preferably, the cleaning is included in liquid phase cleaning, gas phase cleaning and ultraviolet lighting cleaning
One or more kinds of combinations.
Further, the gas phase cleaning includes one kind in gaseous plasma cleaning and ozone clean, clearly
The transparent rigid substrate surface is activated while washing, to improve the transparent rigid substrate and subsequent technique film
Binding force.
Further, substrate of glass respectively cleans it using acetone, ethyl alcohol and water；Sapphire substrates are adopted
With dense H2SO4And H2O2Mixed solution it is cleaned.
Preferably, the technics of enhancing viscosity is included in the transparent rigid substrate surface formation polymer, metal or oxide
In one kind, including using gas-phase deposition deposit hexamethyldisilazane HMDS, using the poly- methyl-prop of spin coating proceeding spin coating
E pioic acid methyl ester PMMA or hmds HMDS.
Step 2) forms patterned mask material using micro-nano technology means in the transparent rigid substrate surface.
As an example, the mask material of step 2) includes one kind in uv-curable glue and heat-curable glue, using spin coating, scrape
It applies, print, the mode of printing is coated.
As an example, the micro-nano technology means include ultraviolet photolithographic, electron beam exposure, nano impression, interference lithography, print
One kind in brush, printing, to form patterned mask material.
Step 3) is prepared down using wet-etching technology and/or dry etch process in the transparent rigid substrate
Taper micro nano structure array, the back taper micro nano structure array have the anti-reflection antireflection characteristic of wide spectrum wide-angle and height
Mechanical strength.
As an example, the wet-etching technology includes one kind in isotropic corrosion and anisotropic corrosion.Into one
Step ground, for substrate of glass, corrosive liquid HF, NH4F and H2The mixed liquor of O compositions, corrosion temperature is room temperature；For process for sapphire-based
Bottom, corrosive liquid H2SO4And H3PO4The mixed liquor of composition, corrosion temperature control are 240~320 DEG C.
As an example, the dry etching technology includes ion beam etching, reactive ion etching, inductively coupled plasma
One kind in etching, laser ablation.Further, for substrate of glass, using reactive ion etching, the gas packet used is etched
Include CF4、SF6And He, etching power are no more than 600W；For sapphire substrates, using inductively coupled plasma etching, carve
It loses gas and includes BCl3And Cl2, one kind in Ar, HBr and two or more combinations.
As an example, the patterned mask material is the mask material for including bowl configurations or column structure.
The wet-etching technology and/or dry etch process is directly directly carve on the mask material of bowl configurations
Erosion, to be fallen in transparent rigid substrate, Coating Materials or simultaneously in the Coating Materials and the transparent rigid substrate
Taper micro nano structure array is anti-reflection anti-reflection structure.
Alternatively, the wet-etching technology and/or dry etch process include：First on the mask material of column structure
The second mask layer is deposited, subsequent selective removal mask material retains latticed second mask layer and is performed etching as mask, with
In transparent rigid substrate, Coating Materials or simultaneously in the Coating Materials and the transparent rigid substrate, acquisition back taper is micro-
Nano-structure array is anti-reflection anti-reflection structure.Further, second mask layer includes one in metal layer and compound layer
Kind, the metal layer includes one kind in tantalum, chromium, aluminium, and the compound layer includes one in aluminium oxide, silica, silicon nitride
Kind.
Step 4), in the surface of the back taper micro nano structure array and/or the back taper micro nano structure array
Heteropleural deposition one or two layers more than different light refractive indexes optical material layer, the optical material layer and the back taper
Shape micro nano structure array forms compound back taper micro nano structure array, to the reflection and transmission spectrum coordinated regulation of incident light.
Further, optical material layer of the optical material layer for different light refractive indexes more than one or two layers, including oxidation
Silicon, tantalum oxide, aluminium oxide, silicon nitride, magnesium fluoride and lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide one or two
The lamination of composition described above.
As an example, in step 1), further include in the transparent rigid substrate surface makes Coating Materials the step of；Step
2) mask material is formed in the Coating Materials surface；Back taper micro nano structure array in step 3) is formed in the plating
In membrane material or it is formed simultaneously in the Coating Materials and the transparent rigid substrate.
The present invention also provides a kind of application of micro nano structure optical element, the micro nano structure optical element application
In photophore and display.
As an example, the micro nano structure optical element acts synergistically with photophore and display, inhibit blue violet light
Through while increasing the transmission of long wavelength, to reduce the injury to human body retina, while improve the bright of photophore and display
Degree inhibits dazzle.
As an example, for the display, the back taper micro nano structure array of the micro nano structure optical element
Period be below 400nm；For photophore, the week of the back taper micro nano structure array of the micro nano structure optical element
Phase is not limited to below 400nm.
Embodiment 1
The present embodiment provides a kind of methods using nano impression to prepare the micro-nano knot of back taper on sapphire cover board
Structure array, as shown in Figure 2 a, wherein 21 be back taper micro nano structure array, 22 be sapphire cover board.This structure can be real
The anti-reflection effect of existing wide range, also has mechanical strength and wear resistance well.In fields such as illumination, display, showcases
With application prospect.
The present embodiment is described in detail below, the preparation method of the micro nano structure optical element of the present embodiment includes
Step：
The first step：The cleaning and surface treatment of sapphire cover board.One piece of sapphire cover board is taken, it is 125 to be put into temperature
Degree Celsius the concentrated sulfuric acid and hydrogen peroxide ratio be 3:In 1 mixed solution, clean 10 minutes.Then, 120 degrees Celsius of bakings are placed on
It is toasted 30 minutes in case, to remove the moisture on surface.
Second step：Nano impression soft mode version is reprinted and anti-stick processing.First, anti-stick processing is carried out to nickel caster,
The period is carried in the nickel master mold version as 250nm, inverted cone-shaped structure (groove) of the depth for 400nm, the anti-stick method used
For monolayer vapour deposition process, the antiplastering aid used is fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl
Trichlorosilane, perfluorododecyl trichlorosilane etc..Secondly, the pattern on nickel caster is reprinted with siloxane polymer, it is described
Siloxane polymer includes double-layer structure, with the PDMS (dimethyl silicone polymer) that pattern contacts layer is high-modulus, rear support
Layer is the PDMS of low modulus.Finally, anti-stick processing is carried out to the soft mode version reprinted, the anti-stick method used is monolayer gas
Phase sedimentation, the antiplastering aid used are fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl trichlorosilane, complete
Fluorine dodecyltrichlorosilane etc..Nickel master tooling and the SEM of soft mode version (Scanning Electron microscope) photo are respectively such as Fig. 2 b and 2c
It is shown.
Third walks：Nano impression process.First, the lamination of spin coating one print on treated in the first step sapphire cover board
Glue, the coining glue are negative photoresist (UV1502 of such as NanoCarve companies imprints glue), and spin coating rate is 300rpm, after spin coating
The thickness of glue is 200nm.The coining glue needs to carry out preliminary drying, and preliminary drying condition is 80 degrees Celsius of holding 120s.Secondly, by second
The polymer soft mode version prepared in step is affixed on coining glue upper surface, and gives certain pressure, makes soft mode version and coining glue abundant
Fitting ensures the quality of imprinted pattern.Then, the ultraviolet light (200- of doses is given right over soft mode version
600mJ/cm2), make coining glue crosslinking curing.Finally, soft mode version with cover board is detached, i.e., is left and polymer on coining glue
The opposite patterning of soft mode version (i.e. the inverted cone-shaped structure of groove-like).The SEM photograph of imprint result is as shown in Figure 2 d.
4th step：Dry etching.After the completion of coining back taper is etched on sapphire cover board with the method for dry etching
Structure, the dry etching are inductively coupled plasma etching, and it is BCl to etch the gas used3、Cl3, Ar and HBr, etching
Power is 200W, etch period 150s.Etch result SEM photograph as shown in Figure 2 e, by Fig. 2 e as it can be seen that the back taper is micro-
Nano-structure array includes 23 array of back taper groove structure, also, 24 phase of carrier material at the top of each back taper groove structure
Interconnection is connected together so that the back taper micro nano structure array has high mechanical properties.
5th step：Transmitance performance test is carried out to the cover board after etching, test result is as shown in figure 2f.It can be found that
The micro nano structure of the back taper of the present invention has good wide spectrum angular anti-reflection effect.
Embodiment 2
Back taper micro nano structure array is combined by the present embodiment with plated film, and compound back taper is formed on sapphire cover board
Shape micro nano structure array, as shown in Figure 3a, wherein 31 be SiO2Film plating layer has back taper micro nano structure array, and 32 are
Sapphire cover board.The structure can realize the anti-reflection effect of wide range, while blue violet light is penetrated and is made with certain inhibition
With in fields such as illumination, displays with application prospect.
The present embodiment is described in detail below, the preparation method of the micro nano structure optical element of the present embodiment includes
Step：
The first step：The cleaning and surface treatment of sapphire cover board.One piece of sapphire cover board is taken, it is 125 to be put into temperature
Degree Celsius the concentrated sulfuric acid and hydrogen peroxide ratio be 3:In 1 mixed solution, clean 10 minutes.Then, 120 degrees Celsius of bakings are placed on
It is toasted 30 minutes in case, to remove the moisture on surface.Finally, with the method for magnetron sputtering in lid surface deposition 300nm thickness
SiO2Layer, as the film plating layer in compound back taper micro nano structure array.
Second step：Nano impression soft mode version is reprinted and anti-stick processing.First, anti-stick processing is carried out to nickel caster,
The period is carried in the nickel master mold version as 250nm, is highly the inverted cone-shaped structure of 400nm, the anti-stick method used is single point
Sublayer vapour deposition process, the antiplastering aid used is fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl trichlorine silicon
Alkane, perfluorododecyl trichlorosilane etc..Secondly, the pattern on nickel caster, the siloxanes are reprinted with siloxane polymer
Polymer includes double-layer structure, and with the PDMS (dimethyl silicone polymer) that pattern contacts layer is high-modulus, rear support layer is low
The PDMS of modulus.Finally, anti-stick processing is carried out to the soft mode version reprinted, the anti-stick method used is vapor-deposited for monolayer
Method, the antiplastering aid used is fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl trichlorosilane, perfluor 12
Alkyltrichlorosilanes etc..Nickel master tooling and the SEM photograph of soft mode version difference are as shown in figures 3 b and 3 c.
Third walks：Nano impression process.First, the lamination of spin coating one print on treated in the first step sapphire cover board
Glue, the coining glue are negative photoresist (UV1502 of such as NanoCarve companies imprints glue), and the thickness of glue is 200nm after spin coating.Institute
Stating coining glue needs to carry out preliminary drying, and preliminary drying condition is 80 degrees Celsius of holding 120s.Secondly, it is the polymer prepared in second step is soft
Masterplate is affixed on coining glue upper surface, and gives certain pressure, and soft mode version is made fully to be bonded with coining glue, ensures imprinted pattern
Quality.Then, the ultraviolet light (200-600mJ/cm of doses is given right over soft mode version2), hand over coining glue
Connection curing.Finally, soft mode version with cover board is detached, i.e., leaves the patterning opposite with polymer soft mode version on coining glue
(i.e. inverted cone-shaped structure).The SEM photograph of imprint result is as shown in Figure 3d.
4th step：Dry etching.It is etched using RIE, in SiO2Inverted cone-shaped structure is etched in material layer.The etching makes
Gas is：CF4、SF6, He, the power of the etching is 200W, and the etch period is 2 minutes.In this etching technics
Under the conditions of, SiO2Layer can't be cut through, and still have one layer of complete SiO between inverted cone-shaped structure and sapphire cover board2Layer.It carves
Lose the SEM photograph of result as shown in Figure 3 e.
5th step：Transmitance performance test is carried out to the cover board after etching, test result is as illustrated in figure 3f.It can be found that
The structure can realize the anti-reflection effect of wide range, have certain inhibiting effect simultaneously for blue violet light.
Embodiment 3
The present embodiment using the method for nano impression in the surface 1 of glass cover-plate (42 in Fig. 4 a) (41 in Fig. 4 a) and
Surface 2 (43 in Fig. 4 a) builds two-sided back taper micro nano structure array, as shown in Figure 4 b, wherein 44 and 46 be back taper
Micro nano structure array, 45 be glass cover-plate.This structure can increase substantially the light transmission rate of glass close to 100%.
The present embodiment is described in detail below, the preparation method of the micro nano structure optical element of the present embodiment includes
Step：
The first step：The cleaning and surface treatment of glass base lid plate.One piece of glass substrate is taken, with acetone, ethyl alcohol and deionization
Water respectively cleans 15 minutes, removes the impurity such as molecule and the organic matter on surface.Then it is surface-treated with oxygen plasma,
Hydrophilic radical is introduced in glass surface, improves the coating quality of follow-up coining glue.
Second step：Nano impression soft mode version is reprinted and anti-stick processing.First, anti-stick processing is carried out to nickel caster,
The period is carried in the nickel master mold version as 250nm, is highly the inverted cone-shaped structure of 400nm, the anti-stick method used is single point
Sublayer vapour deposition process, the antiplastering aid used is fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl trichlorine silicon
Alkane, perfluorododecyl trichlorosilane etc..Secondly, the pattern on nickel caster, the siloxanes are reprinted with siloxane polymer
Polymer includes double-layer structure, and with the PDMS (dimethyl silicone polymer) that pattern contacts layer is high-modulus, rear support layer is low
Modulus PDMS.Finally, anti-stick processing is carried out to the soft mode version reprinted, the anti-stick method used is vapor-deposited for monolayer
Method, the antiplastering aid used is fluorine-containing silane, such as perfluoro decyl triethoxysilane, perfluoro capryl trichlorosilane, perfluor 12
Alkyltrichlorosilanes etc..Nickel master tooling and the SEM photograph of soft mode version are respectively as shown in Fig. 4 c and 4d.
Third walks：Nano impression process 1.First, spin coating one is laminated in glass cover plate surfaces 1 that treated in the first step
Glue is printed, the coining glue is negative photoresist (UV1503 of such as NanoCarve companies imprints glue), and the thickness of glue is 300nm after spin coating.
The coining glue needs to carry out preliminary drying, and preliminary drying condition is 80 degrees Celsius of holding 120s.Secondly, the polymer that will be prepared in second step
Soft mode version is affixed on coining glue upper surface, and gives certain pressure, and soft mode version is made fully to be bonded with coining glue, ensures imprinted pattern
Quality.Then, the ultraviolet light (200-600mJ/cm of doses is given right over soft mode version2), make coining glue
Crosslinking curing.Finally, soft mode version with cover board is detached, i.e., leaves the patterning opposite with polymer soft mode version on coining glue
(i.e. inverted cone-shaped structure).The SEM photograph of imprint result is as shown in fig 4e.
4th step：Nano impression process 2.First, spin coating one is laminated in glass cover plate surfaces 2 that treated in the first step
Glue is printed, the coining glue is negative photoresist (UV1503 of such as NanoCarve companies imprints glue), and the thickness of glue is 300nm after spin coating.
The coining glue needs to carry out preliminary drying, and preliminary drying condition is 80 degrees Celsius of holding 120s.Secondly, the polymer that will be prepared in second step
Soft mode version is affixed on coining glue upper surface, and gives certain pressure, and soft mode version is made fully to be bonded with coining glue, ensures imprinted pattern
Quality.Then, the ultraviolet light of doses is given right over soft mode version, makes coining glue crosslinking curing.Finally, will
Soft mode version is detached with cover board, i.e., leaves the patterning (i.e. inverted cone-shaped structure) opposite with polymer soft mode version on coining glue.
The SEM photograph of imprint result is as shown in fig. 4f.
5th step：Dry etching.Etched using RIE, to the inverted cone-shaped structure in glass cover plate surfaces 41 and 42 respectively into
Row etching, the gas used that etches are：CF4、SF6, He, the power of the etching is 200W, and the etch period is 3 points
Clock.Finally, it is respectively formed back taper micro-nano structure array in glass cover plate surfaces 41 and 42.The inverted cone-shaped structure has been carved
It loses in glass material.
6th step：Transmitance performance test is carried out to the glass substrate after etching, test result is as shown in figure 4g.It can send out
Existing, the light transmission rate of glass is increased to more than 98% by this structure.
Embodiment 4
The present embodiment builds back taper micro-nano structure array in curved substrate, is illuminated in lenticule, car light and curved surface
The fields of grade have broad application prospects.The present embodiment is described in detail below.Process flow chart such as Fig. 5 a~Fig. 5 c institutes
Show.
The first step：The cleaning and surface treatment of curved substrate.The material of the curved surface cover board is glass, with acetone, ethyl alcohol
It is respectively cleaned with deionized water 15 minutes, removes the molecule and impurity on surface.Then it is surface-treated with oxygen plasma,
Hydrophilic radical is introduced in glass surface, improves the coating quality of follow-up coining glue.The mode of the coating is blade coating.
Second step：Nano impression soft mode version is reprinted and anti-stick processing.First, anti-stick processing is carried out to nickel caster,
The period is carried in the nickel master mold version as 250nm, is highly the inverted cone-shaped structure of 400nm, the anti-stick method used is single point
Sublayer vapour deposition process, the antiplastering aid used are fluorine-containing silane, such as：Perfluoro decyl triethoxysilane, perfluoro capryl three
Chlorosilane, perfluorododecyl trichlorosilane etc..Secondly, the pattern on nickel caster, the silicon are reprinted with siloxane polymer
Oxygen alkane polymer includes double-layer structure, with the PDMS (dimethyl silicone polymer) that pattern contacts layer is high-modulus, rear support layer
PDMS for low modulus.Finally, anti-stick processing is carried out to the soft mode version reprinted, the anti-stick method used is monolayer gas phase
Sedimentation, the antiplastering aid used are fluorine-containing silane, such as：It is perfluoro decyl triethoxysilane, perfluoro capryl trichlorosilane, complete
Fluorine dodecyltrichlorosilane etc..
Third walks：Nano impression process.First, the lamination of spin coating one print on treated in the first step sapphire cover board 53
Glue 52, the coining glue are negative photoresist (UV1506 of such as NanoCarve companies imprints glue), and the thickness of glue is 600nm after spin coating.
The coining glue needs to carry out preliminary drying, and preliminary drying condition is 120 degrees Celsius of holding 60s.Secondly, the polymer that will be prepared in second step
Soft mode version 51 is affixed on coining glue upper surface, and gives certain pressure, and soft mode version is made fully to be bonded with coining glue, ensures imprinted pattern
The quality of case.Then, the ultraviolet light (200-600mJ/cm of doses is given right over soft mode version2), make coining
Glue crosslinking curing.Finally, soft mode version with cover board is detached, i.e., leaves the pattern knot opposite with polymer soft mode version on coining glue
Structure (i.e. inverted cone-shaped structure).Moulding process schematic diagram is as shown in figure 5a and 5b.
4th step：Dry etching.It is etched using RIE, back taper micro nano structure battle array is etched in bend glass substrate
Row 54.The gas that uses of etching is：CF4、SF6, He, the power of the etching is 100W, and the etch period is 6 minutes.
Etch result schematic diagram as shown in Figure 5 c.
Embodiment 5
The present embodiment prepares patterned Sapphire Substrate using the method for ultraviolet photolithographic, and the pattern is back taper micro-nano
Rice array of structures, as shown in Figure 6 a, wherein 61 be back taper micro nano structure array, 62 be Sapphire Substrate.It is led in LED industry
On the one hand domain, this patterned Sapphire Substrate are conducive to the growth of the luminescent materials such as gallium nitride, are on the one hand conducive to light
Extraction efficiency.
The present embodiment is described in detail below, the preparation method of the micro nano structure optical element of the present embodiment includes
Step：
The first step：The cleaning and surface treatment of Sapphire Substrate.One piece of sapphire cover board is taken, it is 125 to be put into temperature
Degree Celsius the concentrated sulfuric acid and hydrogen peroxide ratio be 3:In 1 mixed solution, impregnate 10 minutes.Then, 120 degrees Celsius of bakings are placed on
It is toasted 30 minutes in case, to remove the moisture on surface.
Second step：Spin coating photoresist in Sapphire Substrate after cleaning.The photoresist be positive photoresist, glue after spin coating
Thickness is 3 μm.The photoresist good to spin coating carries out preliminary drying operation, and preliminary drying condition is kept for 5 minutes for 110 degrees Celsius.
Third walks：Ultraviolet photolithographic is carried out using mask means.The mask for Hexagonal Close-packed circular array (such as Fig. 6 b institutes
Show), 2 μm of round diameter, wherein 3 μm of period, circular portion are light tight region (as shown in the 63 of Fig. 6 b), remaining is transparent area
Domain (as shown in the 64 of Fig. 6 b).The step of ultraviolet photolithographic, is as follows：1st, it is aligned, will need the region etched and mask using microscope
Version regional alignment；2nd, it exposes, is exposed with ultraviolet lamp, exposure dose 200mJ/cm2；3rd, develop, with developer solution to exposure after
Sample develops, and the region being exposed is completely dissolved removal, exposes Sapphire Substrate.Sample shape after ultraviolet photolithographic
As fig. 6 c, wherein 65 be cylindrical array of structures, 66 be Sapphire Substrate to looks.
4th step：Deposit SiO2Layer, the mask as subsequent wet etching.One layer is deposited on sample in the third step
300nm thickness SiO2Layer then spends glue and removes cylindrical photoresist array completely, expose Sapphire Substrate, such as schemes
Shown in the 68 of 6d.In this way, leave behind latticed SiO on entire substrate2Film layer, as shown in the 67 of Fig. 6 d.
5th step：Dry etching.Dry etching is carried out to the sample obtained in the 4th step, the dry etching is inductance coupling
Plasma etching is closed, it is BCl to etch the gas used3、Cl3, Ar and HBr, etching power is 200W, etch period 300s.
Etch the SEM photograph of result as shown in Figure 6 a.After the completion of Sapphire Substrate etching, then with HF by remaining SiO2Mask layer dissolves
Removal.So far, i.e., back taper micro nano structure array is obtained on a sapphire substrate, as shown in Figure 6 a.
Embodiment 6
The present embodiment prepares ultraviolet light-filter on a sapphire substrate using the method for electron beam lithography.Such as Fig. 7 a institutes
Show, this filter is made of the micro nano structure array and multilayer functional material of back taper, wherein 71 be the first optical material
Layer, 72 be back taper micro nano structure array, and 73 be Sapphire Substrate layer, and 74 be the second optical material layer.This composite construction
The transmission of ultraviolet light can effectively be inhibited, additionally it is possible to ensure that its all band has higher transmitance.
The present embodiment is described in detail below, the preparation method of the micro nano structure optical element of the present embodiment includes
Step：
The first step：The cleaning and surface treatment of sapphire substrate.The cleaning and surface treatment of Sapphire Substrate.Take one piece of indigo plant
Jewel cover board, it is 3 to be put into the concentrated sulfuric acid that temperature is 125 degrees Celsius and hydrogen peroxide ratio:In 1 mixed solution, 10 are impregnated
Minute.Then, it is placed in 120 degrees Celsius of baking ovens and toasts 30 minutes, to remove the moisture on surface.
Second step：Spin-coating erosion resistant agent in Sapphire Substrate after cleaning.The resist is positive photoresist, after spin coating
The thickness of glue is 150nm.The photoresist good to spin coating carries out preliminary drying operation, and preliminary drying condition is kept for 5 minutes for 110 degrees Celsius.
Third walks：Photoresist is exposed using the method for electron beam lithography.The type of the electron beam lithography is straight
Formula photoetching is write, does not need to optical mask.Then, coordinate etching technics, obtain the array of structures of back taper on a sapphire substrate,
As shown in Figure 7b.The etching technics is inductively coupled plasma etching, and it is BCl to etch the gas used3、Cl3, Ar and
HBr, etching power are 300W, etch period 100s.The obtained period of back taper micro nano structure array is 100nm, deep
It spends for 100nm.
4th step：The first optical material layer is deposited, as shown in 71 in Fig. 7 a.The substrate top surface obtained in the third step is sunk
The SiO of one layer of 10nm thickness of product2Film introduces relatively low refraction materials (refractive index 1.5), further improves light transmittance.
5th step：The second optical material layer is deposited, as shown in 74 in Fig. 7 a.The substrate lower surface obtained in the 4th step
The ZnO film of one layer of 100nm thickness is deposited, since ZnO (refractive index is 1.9 or so) films are in UV light region (being less than 400nm)
With good absorption coefficient, it can effectively inhibit UV light permeability.
6th step：Spectral characterization is carried out to filter, as shown in Figure 7 c.It can be found that the composite construction of this multilayer has
Effect increases the transmission of long wavelength, while inhibits the transmission of blue violet light (wavelength 300-420nm), on the one hand can also improve illumination
With display device brightness, inhibition dazzle, on the other hand reduce injury of the ultraviolet light to human body.
As described above, micro nano structure optical element of the present invention and preparation method and application, has below beneficial to effect
Fruit：
1) present invention utilizes the micro-nano technologies such as ultraviolet photolithographic, electron beam exposure, nano impression, interference lithography, printing, printing
Means realize the preparation of the anti-reflection anti-reflection structure of the micro-nano array of back taper, have reached the anti-reflection antireflective of wide spectrum, extensive angle
Purpose.
2) the carrier selection of the back taper micro nano structure array prepared by is freer, can be transparent rigid substrate sheet
Body or the other materials deposited in substrate, such as silica, aluminium oxide, silicon nitride, magnesium fluoride, lithium fluoride, carbonization
Silicon, gold, silver, titanium oxide, zinc oxide etc..
3) manufacturing cost of back taper micro-nano structure array is low, and characteristic size can controllably be adjusted between 100nm to 10 μm
Section.Such as in display, show window, the application of showcase field, periodic dimensions are in below 400nm；Such as in illumination or photovoltaic application field,
Size can be not necessarily limited to below 400nm.
4) the back taper micro-nano structure array prepared by compared with traditional nanocone (moth eye) structure, has more excellent
Mechanical strength and weatherability.
5) the back taper nanometer antireflection structure prepared by, can also be combined with optical coating, realize specific band, difference
The anti-reflection effect of spectral width.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, all those of ordinary skill in the art without departing from disclosed spirit with being completed under technological thought
All equivalent modifications or change, should by the present invention claim be covered.
Claims (32)
1. a kind of micro nano structure optical element, which is characterized in that the micro nano structure optical element includes：Transparent rigid base
Bottom and the back taper micro nano structure array for being formed in the transparent rigid substrate surface, the back taper micro nano structure battle array
Row have the anti-reflection antireflection characteristic of wide spectrum wide-angle and high mechanical properties.
2. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure battle array
List face is also formed with the optical material layer of different light refractive indexes more than one or two layers, to realize to incident light selectivity
Wide spectrum wide-angle anti-reflective effect.
3. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure
Planar dimension ranging from 100nm~10 μm.
4. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure battle array
Row include back taper groove structure array.
5. micro nano structure optical element according to claim 4, it is characterised in that：The back taper micro nano structure battle array
In row, the carrier material at the top of each back taper micro nano structure interconnects so that the back taper micro nano structure
Array has high mechanical properties.
6. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure battle array
It is classified as periodic ordered structure or random disordered structure.
7. micro nano structure optical element according to claim 1, it is characterised in that：The transparent rigid substrate includes glass
One kind in glass, sapphire, quartz, gallium nitride, silicon carbide.
8. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure battle array
The carrier of row is transparent rigid substrate in itself or is the Coating Materials deposited in the transparent rigid substrate or is the plated film
The combination of material and the transparent rigid substrate, the Coating Materials include silica, tantalum oxide, aluminium oxide, silicon nitride, fluorination
The combination of one or more of magnesium and lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide.
9. micro nano structure optical element according to claim 1, it is characterised in that：The back taper micro nano structure battle array
Row are formed in the one side of the transparent rigid substrate or are formed in the opposite two sides of the transparent rigid substrate.
10. micro nano structure optical element according to claim 1, it is characterised in that：The transparent rigid substrate includes
One kind in planar structure or curved-surface structure.
11. a kind of preparation method of micro nano structure optical element, which is characterized in that including step：
Step 1) provides a transparent rigid substrate；
Step 2) forms patterned mask material using micro-nano technology means in the transparent rigid substrate surface；
Step 3), using wet-etching technology and/or dry etch process in preparing back taper in the transparent rigid substrate
Micro nano structure array, the back taper micro nano structure array have the anti-reflection antireflection characteristic of wide spectrum wide-angle and high machinery
Intensity.
12. the preparation method of micro nano structure optical element according to claim 11, it is characterised in that：In step 1),
Further include in the transparent rigid substrate surface make Coating Materials the step of；Mask material in step 2) is formed in the plating
Membrane material surface；Back taper micro nano structure array in step 3) is formed in the Coating Materials or is formed simultaneously in institute
It states in Coating Materials and the transparent rigid substrate.
13. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：It further includes
Step 4), the heteropleural in the surface of the back taper micro nano structure array and/or the back taper micro nano structure array sink
The optical material layer of different light refractive indexes more than product one or two layers, the optical material layer and the back taper are micro-nano
Array of structures forms compound back taper micro nano structure array, to the reflection and transmission spectrum coordinated regulation of incident light.
14. the preparation method of micro nano structure optical element according to claim 13, it is characterised in that：The optics material
Optical material layer of the bed of material for different light refractive indexes more than one or two layers, including silica, tantalum oxide, aluminium oxide, nitrogen
SiClx, magnesium fluoride and lithium fluoride, silicon carbide, gold, silver, titanium oxide, zinc oxide one or more kinds of compositions laminations.
15. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：Step 1)
Further include the step of cleaning and technics of enhancing viscosity are carried out to the transparent rigid substrate.
16. the preparation method of micro nano structure optical element according to claim 15, it is characterised in that：The scavenger
Skill includes the combination of one or more of liquid phase cleaning, gas phase cleaning and ultraviolet lighting cleaning.
17. the preparation method of micro nano structure optical element according to claim 16, it is characterised in that：The gas phase is clear
It washes technique and includes one kind in gaseous plasma cleaning and ozone clean, to the transparent rigid substrate table while cleaning
Face is activated, to improve the binding force of the transparent rigid substrate and subsequent technique film.
18. the preparation method of micro nano structure optical element according to claim 16, it is characterised in that：To substrate of glass
It is cleaned respectively using acetone, ethyl alcohol and water；Dense H is used for sapphire substrates2SO4And H2O2Mixed solution pair
It is cleaned.
19. the preparation method of micro nano structure optical element according to claim 15, it is characterised in that：The thickening work
Skill is included in one kind that the transparent rigid substrate surface is formed in polymer, metal or oxide, including using vapor deposition
Process deposits hexamethyldisilazane HMDS, using spin coating proceeding spin coating polymetylmethacrylate or hmds
HMDS。
20. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：Step 2)
In mask material include one kind in uv-curable glue and heat-curable glue, by the way of spin coating, blade coating, printing, printing into
Row coating.
21. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：It is described micro-
Manufacturing process of receiving includes one kind in ultraviolet photolithographic, electron beam exposure, nano impression, interference lithography, printing, printing, to be formed
Patterned mask material.
22. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：It is described wet
Method etching technics includes one kind in isotropic corrosion and anisotropic corrosion.
23. the preparation method of micro nano structure optical element according to claim 22, it is characterised in that：For glass base
Bottom, corrosive liquid HF, NH4F and H2The mixed liquor of O compositions, corrosion temperature is room temperature；For sapphire substrates, corrosive liquid is
H2SO4And H3PO4The mixed liquor of composition, corrosion temperature control are 240~320 DEG C.
24. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：It is described dry
Method lithographic technique includes one kind in ion beam etching, reactive ion etching, inductively coupled plasma etching, laser ablation.
25. the preparation method of micro nano structure optical element according to claim 24, it is characterised in that：For glass base
Bottom using reactive ion etching, etches the gas used and includes CF4、SF6And He, etching power are no more than 600W；For indigo plant
Jewel substrate, using inductively coupled plasma etching, etching gas includes BCl3And Cl2, one kind and two in Ar, HBr
Kind combination of the above.
26. the preparation method of the micro nano structure optical element according to claim 11 or 12, it is characterised in that：The figure
The mask material of case is the mask material for including bowl configurations or column structure.
27. the preparation method of micro nano structure optical element according to claim 26, it is characterised in that：The wet method is carved
Etching technique and/or dry etch process are the direct etching directly on the mask material of bowl configurations, with transparent rigid substrate,
Coating Materials obtains the increasing of back taper micro nano structure array in the Coating Materials and the transparent rigid substrate simultaneously
Saturating anti-reflection structure.
28. the preparation method of micro nano structure optical element according to claim 26, it is characterised in that：The wet method is carved
Etching technique and/or dry etch process include：The second mask layer is deposited on the mask material of column structure first, is then selected
Property removal mask material, retain latticed second mask layer performs etching as mask, in transparent rigid substrate, Coating Materials
Or the anti-reflection antireflective of back taper micro nano structure array is obtained in the Coating Materials and the transparent rigid substrate simultaneously
Structure.
29. the preparation method of micro nano structure optical element according to claim 28, it is characterised in that：Described second covers
Film layer includes one kind in metal layer and compound layer, and the metal layer includes one kind in tantalum, chromium, aluminium, the compound layer
Including one kind in aluminium oxide, silica, silicon nitride.
30. a kind of application of micro nano structure optical element as described in claim 1~10 any one, it is characterised in that：
The micro nano structure optical element is applied to photophore and display.
31. the application of micro nano structure optical element according to claim 30, it is characterised in that：The micro nano structure
Optical element acts synergistically with photophore and display, inhibits the transmission of blue violet light, while increase the transmission of long wavelength, to reduce
Injury to human body retina, while the brightness of photophore and display is improved, inhibit dazzle.
32. the application of micro nano structure optical element according to claim 30, it is characterised in that：For the display
Device, the period of the back taper micro nano structure array of the micro nano structure optical element is below 400nm；For photophore,
The period of the back taper micro nano structure array of the micro nano structure optical element is not limited to below 400nm.
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| CN109305757A (en) * | 2018-10-17 | 2019-02-05 | 东莞法克泰光电科技有限公司 | A kind of antireflection waterproof glass |
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| CN110927833A (en) * | 2019-12-09 | 2020-03-27 | 无锡物联网创新中心有限公司 | Wide-spectrum anti-reflection and anti-reflection structure, preparation process thereof and grating |
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| CN115201944A (en) * | 2022-07-07 | 2022-10-18 | 鲁隽韬 | Bionic color-changing material, preparation process thereof and bionic color-changing system |
| WO2024047256A1 (en) * | 2022-09-02 | 2024-03-07 | Fusion Bionic Gmbh | Substrate having anti-fogging properties |
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