CN106425128B - The method for preparing grade deep hole at silk using femtosecond laser - Google Patents
The method for preparing grade deep hole at silk using femtosecond laser Download PDFInfo
- Publication number
- CN106425128B CN106425128B CN201611021371.3A CN201611021371A CN106425128B CN 106425128 B CN106425128 B CN 106425128B CN 201611021371 A CN201611021371 A CN 201611021371A CN 106425128 B CN106425128 B CN 106425128B
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- China
- Prior art keywords
- femtosecond laser
- silk
- hole
- profound
- laser
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
Abstract
The present invention relates to laser punching technical fields, and in particular to the method for preparing grade deep hole at silk using femtosecond laser, comprising: femtosecond laser is focused into silk using lens, femtosecond laser forms metastable chevilled silk channel in air；The mean power for adjusting femtosecond laser changes chevilled silk passage length；Target is placed at the different location in chevilled silk channel respectively under the same conditions, finds out ablation intensity point of maximum intensity in chevilled silk channel, then target is fixed at ablation point of maximum intensity and is processed, to obtain millimetre-sized profound and subtle hole；The pore size and surface topography in profound and subtle hole are observed using scanning electron microscope；The profound and subtle hole of different parameters is obtained by changing mean power and the process time of femtosecond laser again.Since femtosecond laser can be formed in air with very high intensity, uniformity is good, propagation distance is longer and metastable chevilled silk channel, the requirement to experiment porch are relatively low, the cost of profound and subtle hole preparation is greatly reduced.
Description
Technical field
The present invention relates to laser punching technical fields, and in particular to prepares the side of grade deep hole at silk using femtosecond laser
Method.
Background technique
With the rapid hair of the modern industries such as aerospace, automobile, engineering device and biologic medical and science and technology
Exhibition, the composite material that intensity is big, hardness is high, flexibility is strong using more and more extensive, therefore, process height on these materials
The profound and subtle hole of quality is current urgent problem to be solved.Traditional drilling technology much can not meet many high, precision and frontier products
The requirement of profound and subtle hole machined on key part.Laser drilling has precision height, repeatable strong, at low cost, material consumption
The advantage of all various aspects such as few, makes laser drilling play increasingly important role in modern manufacturing field.Femtosecond swashs
Although light punching longer pulse laser boring has apparent advantage, from femtosecond laser punching one from the point of view of existing report at present
As be all confined to process micropore on some layer materials.Therefore, the processing method in profound and subtle hole is also just at current cheesing techniques
Urgent problem to be solved.Due to femtosecond laser at silk have very high intensity, uniformity is good and propagation distance is longer.Therefore, it adopts
Then the taper in hole can be substantially reduced with disposal pore-forming at the method for silk with femtosecond laser, improve the surface quality in hole.Benefit
The profound and subtle hole of grade processed with femtosecond laser at silk can not only obtain widely actually answering in aerospace field
With, but also the application of practicality can be obtained in actual biologic medical or engineering device.
Currently with method there are mainly two types of the method for femtosecond laser punching；
1, femtosecond laser replica method processes hole, does not have relative displacement between laser beam work in-process and workpiece, but repeats
Fixing on certain point in workpiece is hit, therefore the aperture that this method processes is smaller.
2, femtosecond laser profile detour method processes hole, and as machining shape is by laser beam and workpiece to be machined relative displacement rail
Processing method determined by mark, using this processing method can process different pore size circular hole in addition arbitrary shape it is different
Type hole.Obtain the controllable high circularity high-precision aperture in aperture.
But in the prior art the method for above two punching there is a problem that it is various:
1, the micro-pore shape that replica method processes is determined by light beam focusing quality, thus this method is for the matter of light beam
Amount is very high, and the control in aperture is relatively difficult, depth-to-width ratio is larger.
2, requirement of the profile detour method processing processing hole to workbench is very high, and economic cost is high, and positioning accuracy has
Limit, deep hole machining taper are larger.
Summary of the invention
Aiming at the shortcomings existing in the above problems, the present invention, which provides, a kind of at silk prepares grade using femtosecond laser
The method of deep hole.
To achieve the above object, the present invention provides a kind of method for preparing grade deep hole at silk using femtosecond laser, should
Method the following steps are included:
Femtosecond laser is focused into silk using lens, the femtosecond laser forms metastable chevilled silk in air
Channel, the lens front are provided with aperture diaphragm, and the focal length of the lens is 500mm-1000mm, also put in front of the lens
It is equipped with light-beam forming unit；
Adjust the femtosecond laser mean power change and focal length of lens size come change the chevilled silk passage length and
Beam waist diameter size；
Target is placed at the different location in the chevilled silk channel respectively under the same conditions, is found out in the chevilled silk channel
Ablation intensity point of maximum intensity, then the target is fixed at the ablation point of maximum intensity and is processed, to obtain millimetre-sized depth
Micropore；
The pore size and surface topography in the profound and subtle hole are observed using scanning electron microscope；
The profound and subtle hole of different parameters is obtained by changing mean power and the process time of the femtosecond laser again.
In the above-mentioned method for preparing grade deep hole at silk using femtosecond laser, preferably, the depth micropore size has
Lesser taper and biggish depth-to-width ratio.
In the above-mentioned method for preparing grade deep hole at silk using femtosecond laser, preferably, the femto-second laser pulse
It is generated by Ti:Sapphire laser femtosecond laser regenerative amplifier.
In the above-mentioned method for preparing grade deep hole at silk using femtosecond laser, preferably, the focal length of the lens is
750mm。
In the above-mentioned method for preparing grade deep hole at silk using femtosecond laser, preferably, the target with a thickness of
5mm。
In the above-mentioned method for preparing grade deep hole at silk using femtosecond laser, preferably, the material of the target is
PMMA。
In the above-mentioned technical solutions, the side provided in an embodiment of the present invention for preparing grade deep hole at silk using femtosecond laser
Femtosecond laser is focused into silk compared with prior art, by lens by method, and femtosecond laser forms relatively stable in air
Chevilled silk channel, adjust femtosecond laser mean power change chevilled silk passage length, blank sheet of paper is placed on to the different positions in chevilled silk channel
Place is set, calcination point of maximum intensity is the focus in chevilled silk channel, and target is fixed on focal point and is processed, to obtain millimetre-sized profound and subtle
Hole, scanning electron microscope observe the pore size and surface topography in profound and subtle hole, change the mean power and processing of femtosecond laser
Time obtains the profound and subtle hole of different parameters.It is logical with very high strong to improve the chevilled silk that femtosecond laser is formed in air
Degree, uniformity is good, propagation distance is longer and relatively stable road, it is therefore not necessary to special environmental requirement, the requirement to experiment porch
It is relatively low, therefore, greatly reduces the cost of profound and subtle hole preparation.
Detailed description of the invention
Fig. 1 is the flow chart for preparing the method for grade deep hole in one embodiment of the invention at silk using femtosecond laser.
Specific embodiment
The present invention is described in further detail below by specific embodiment combination attached drawing.
In view of there is a continuing need for tracking hole front end points for the laser point that focuses in current existing method, therefore it will cause hole
Coagulated again in the straight wall of hole, again accumulation, surface roughness is big, greatly reduces the problem of its depth-to-width ratio, the present invention provides using flying
The method that second laser filament prepares grade deep hole.
Method includes the following steps:
Femtosecond laser is focused into silk using lens, it is logical that femtosecond laser forms metastable chevilled silk in air
Road；
The mean power for adjusting femtosecond laser changes chevilled silk passage length；
Target is placed at the different location in the chevilled silk channel respectively under the same conditions, is found out in the chevilled silk channel
Ablation intensity point of maximum intensity, then the target is fixed at the ablation point of maximum intensity and is processed, to obtain millimetre-sized depth
Micropore；
The pore size and surface topography in profound and subtle hole are observed using scanning electron microscope；
The profound and subtle hole of different parameters is obtained by changing mean power and the process time of femtosecond laser again.
To improve chevilled silk that femtosecond laser is formed in air it is logical with very high intensity, uniformity is good, propagation distance
Longer and relatively stable road, it is therefore not necessary to special environmental requirement, the requirement to experiment porch is relatively low, therefore, significantly
Reduce the cost of profound and subtle hole preparation.
Next this is described in detail using femtosecond laser at the method that silk prepares grade deep hole:
Embodiment 1: the method for preparing grade deep hole at silk using femtosecond laser, as shown in Figure 1, using lens by femtosecond
Laser is focused into silk, and femtosecond laser is formed in air with very high intensity, uniformity is good, propagation distance is longer and phase
To stable chevilled silk channel.
The mean power for adjusting femtosecond laser changes chevilled silk passage length.
Target is placed at the different location in the chevilled silk channel respectively under the same conditions, is found out in the chevilled silk channel
Ablation intensity point of maximum intensity, then the target is fixed at the ablation point of maximum intensity and is processed, to obtain millimetre-sized depth
Micropore；
The pore size and surface topography in profound and subtle hole are observed using scanning electron microscope (SEM)；
The profound and subtle hole of different parameters is obtained by changing mean power and the process time parameter of femtosecond laser again, is obtained
Optimal collocation parameter, so that the taper in hole is minimum, depth-to-width ratio is maximum, and has preferable surface topography.
Wherein it is possible to place aperture diaphragm in front of condenser lens, so as to improve hot spot circularity, and then it is profound and subtle to change processing
The circularity in hole.
Wherein it is possible to place light-beam forming unit in front of condenser lens, thus by Gauss beam reshaping at flat top beam,
To change light distribution, and then reduce the taper in hole.
In the present embodiment, deep micropore size has lesser taper and biggish depth-to-width ratio, in femtosecond laser mean power
In the case where certain, with the increase of process time, the pore size in hole becomes larger, depth-to-width ratio decline；After the taper in hole first increases
Reduction is further added by, but increase tendency is presented on the whole.The timing of process time one, with the increase of femtosecond laser mean power,
The pore size and taper in hole have apparent increase tendency, and depth-to-width ratio declines.
In the present embodiment, femto-second laser pulse is generated by Ti:Sapphire laser femtosecond laser regenerative amplifier.The Ti:Sapphire laser femtosecond swashs
The central wavelength of photo reversal amplifier is 800nm, pulse width 35fs, repetition rate 1kHz, maximum average power 3W.Laser is flat
Equal power is respectively 1W, 1.2W, 1.4W ... 2.6W, and process time is respectively 3s, 5s, 7s ... 21s.
In the present embodiment, the focal length of lens is 500mm-1000mm.When the focal length of lens is 500mm, although focal spot is more saturating
Mirror focal length is small when being 750mm, but its chevilled silk length and intensity compared to the chevilled silk length and intensity that the focal length of lens is 750mm also under
It has dropped very much.Therefore, although aperture is smaller when the focal length of lens is 500mm, taper increases, and depth-to-width ratio also reduced；In lens
When focal length is 1000mm, although its chevilled silk length and intensity are compared to the chevilled silk length and intensity that the focal length of lens is 750mm
Enhancing, but its focal spot greatly increases when 750mm compared with the focal length of lens.Therefore, although taper is when the focal length of lens is 500mm
Reduce, depth-to-width ratio increased, but aperture considerably increases.Focal spot size, chevilled silk length and intensity, lens are arrived taking into account the above
Focal length is that 750mm is optimal selection.
In the present embodiment, the material of target is PMMA.The target has preferable chemical stability and weatherability, easy processing
Dyeing, attractive appearance, asepsis environment-protecting, good light transmission rate and have the characteristics that good dielectric and electrical insulation capability, is
One of most widely used material in transparent material is synthesized so far, is had a wide range of applications.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of method for preparing grade deep hole at silk using femtosecond laser, which is characterized in that method includes the following steps:
Femtosecond laser is focused into silk using lens, it is logical that the femtosecond laser forms metastable chevilled silk in air
Road, the lens front are provided with aperture diaphragm, and the focal length of the lens is 500mm-1000mm, also place in front of the lens
There is light-beam forming unit；
The mean power of the femtosecond laser is adjusted to change the chevilled silk passage length；
Target is placed at the different location in the chevilled silk channel respectively under the same conditions, finds out ablation in the chevilled silk channel
Intensity point of maximum intensity, then the target is fixed at the ablation intensity point of maximum intensity and is processed, to obtain millimetre-sized depth
Micropore；
The pore size and surface topography in the profound and subtle hole are observed using scanning electron microscope；
The profound and subtle hole of different parameters is obtained by changing mean power and the process time of the femtosecond laser again.
2. the method for preparing grade deep hole at silk using femtosecond laser as described in claim 1, it is characterised in that: the depth
Micropore size has lesser taper and biggish depth-to-width ratio.
3. the method for preparing grade deep hole at silk using femtosecond laser as described in claim 1, it is characterised in that: described to fly
Second laser is generated by Ti:Sapphire laser femtosecond laser regenerative amplifier.
4. the method for preparing grade deep hole at silk using femtosecond laser as described in claim 1, it is characterised in that: described
The focal length of mirror is 750mm.
5. the method for preparing grade deep hole at silk using femtosecond laser as described in claim 1, it is characterised in that: the target
Material with a thickness of 5mm.
6. the method for preparing grade deep hole at silk using femtosecond laser as described in claim 1, it is characterised in that: the target
The material of material is PMMA.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611021371.3A CN106425128B (en) | 2016-11-21 | 2016-11-21 | The method for preparing grade deep hole at silk using femtosecond laser |
Applications Claiming Priority (1)
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| CN201611021371.3A CN106425128B (en) | 2016-11-21 | 2016-11-21 | The method for preparing grade deep hole at silk using femtosecond laser |
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| CN106425128A CN106425128A (en) | 2017-02-22 |
| CN106425128B true CN106425128B (en) | 2019-02-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104570363A (en) * | 2015-02-03 | 2015-04-29 | 大族激光科技产业集团股份有限公司 | Gauss laser beam shaping method and device and precise laser micropore processing device |
| CN104959736A (en) * | 2015-07-23 | 2015-10-07 | 深圳英诺激光科技有限公司 | Apparatus and method for processing micropore through filamentous laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY184075A (en) * | 2010-07-12 | 2021-03-17 | Rofin Sinar Tech Inc | Method of material processing by laser filamentation |
| CN103240531B (en) * | 2013-05-10 | 2015-02-11 | 中国电子科技集团公司第五十四研究所 | Segmentation laser punching method |
| US9102011B2 (en) * | 2013-08-02 | 2015-08-11 | Rofin-Sinar Technologies Inc. | Method and apparatus for non-ablative, photoacoustic compression machining in transparent materials using filamentation by burst ultrafast laser pulses |
| US20150121960A1 (en) * | 2013-11-04 | 2015-05-07 | Rofin-Sinar Technologies Inc. | Method and apparatus for machining diamonds and gemstones using filamentation by burst ultrafast laser pulses |
| CN103878496A (en) * | 2014-04-15 | 2014-06-25 | 北京理工大学 | Method for efficiently processing high-quality micro hole with large ratio of pit-depth to pit-diameter through femtosecond laser |
| CN105458529A (en) * | 2016-01-21 | 2016-04-06 | 北京理工大学 | Method for efficiently making large-depth-diameter-ratio micropore arrays |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104570363A (en) * | 2015-02-03 | 2015-04-29 | 大族激光科技产业集团股份有限公司 | Gauss laser beam shaping method and device and precise laser micropore processing device |
| CN104959736A (en) * | 2015-07-23 | 2015-10-07 | 深圳英诺激光科技有限公司 | Apparatus and method for processing micropore through filamentous laser |
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