CN106415772B - Integrated micro-electro-mechanical switch and its correlation technique - Google Patents
Integrated micro-electro-mechanical switch and its correlation technique Download PDFInfo
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- CN106415772B CN106415772B CN201580034300.4A CN201580034300A CN106415772B CN 106415772 B CN106415772 B CN 106415772B CN 201580034300 A CN201580034300 A CN 201580034300A CN 106415772 B CN106415772 B CN 106415772B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2239/00—Miscellaneous
- H01H2239/004—High frequency adaptation or shielding
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Abstract
A kind of system includes being coupled to multiple micro-electromechanical switch mutual, including multiple gates.Each micro-electromechanical switch includes the beam electrode being arranged in substrate.Beam includes the anchor section for being coupled to the beam electrode.The beam includes the first beam portion point extended along first direction from the anchor section；And the second beam portion point extended along second direction opposite to the first direction from the anchor section.First coordination electrode and the first contact electrode are arranged on the substrate, towards first beam portion point.Second coordination electrode and the second contact electrode are arranged on the substrate, towards second beam portion point.First coordination electrode and second coordination electrode are coupled, with the gate being formed among the multiple gate.The multiple micro-electromechanical switch is arranged at least one of serial arrangement, arranged in parallel.
Description
Cross-reference to related applications
This application is entitled " the A MICRO-ELECTROMECHANICAL SWITCH submitted on November 30th, 2011
The continuous case in part of the U.S. Patent application No. 13/307262 of AND A RELATED METHOD THEREOF ".
Background technique
The present invention relates generally to microelectromechanicdevices devices, and more specifically it relates to integrated micro-electro-mechanical switchs.
MEMS (MEMS) device has applications various extensively, and generally in commercial product.It is a type of
MEMS device is mems switch.Common mems switch includes one or more mems switches with array to arrange.MEMS is opened
Close be very suitable for include mobile phone, wireless network, communication system and radar system application.In a wireless device,
Mems switch can be used as duplexer, mode switch, transmission/reception switch, and the like.
Common mems switch is using the plating metal cantilever being supported at one end and is arranged in the another of metal cantilever
The electricity touching position at end.Coordination electrode is positioned in below metal cantilever.Direct current (" DC ") motivates (actuation) voltage across control
Electrode is applied to metal cantilever, forces metal cantilever to be bent downwardly and formed with bottom signal trace (trace) and is in electrical contact.One
Denier establishes electrical contact, then closing of circuit and electric signal can pass through metal cantilever to bottom signal traces.
A type of MEMS device is MEMS radio frequency (RF) switch.Due to the low driving power characteristic of MEMS RF switch
And its ability for operating in radio-frequency region, MEMS RF switch are used for wireless device.However, working as significant RF voltage quilt
When being applied between beam (beam) electrode and contact electrode, problem continually occurs in MEMS RF is switched.Such voltage can coupling
It closes in coordination electrode, and split puts row autoexcitation into.In other words, these mems switches be generally subjected to wherein to switch in cantilever
Beam motivates the problem of (autoexcitation) in "Off" state due to high voltage RF signal.Thus, high voltage RF signal generates
Enough electrostatic force causes failure come the beam that pulls down switch.
Associated have another disadvantage that based on the residual amount of energy generated in contact electrode is switched with MEMS RF and is generated
" thermal switch " voltage.Such residual amount of energy can be connect described in based on the residual voltage from system and from gate (gate) route
The coupling energy of touched electrode is generated.
In the presence of a kind of needs of the system for raising, overcomes and completely cut off (standoff) capacity with voltage
(capability) and the associated disadvantage of the generation of thermal switch voltage.
Summary of the invention
According to an example embodiment, disclose a kind of with being coupled to multiple microcomputers mutual, including multiple gates
The system of electric switch.Each micro-electromechanical switch includes the beam electrode being arranged in substrate.Beam includes being coupled to the beam electrode
Anchor section.The beam includes the first beam portion point extended along first direction from the anchor section；And along and the first party
The second beam portion extended to opposite second direction from the anchor section point.First coordination electrode and the first contact electrode are arranged
On the substrate, towards first beam portion point.Second coordination electrode and the second contact electrode are arranged on the substrate,
Towards second beam portion point.First coordination electrode and second coordination electrode are coupled, to form the multiple door
Gate among control.The multiple micro-electromechanical switch is arranged at least one of serial arrangement, arranged in parallel.
According to another example embodiment, a kind of correlating method is disclosed.The method includes equably to apply excitation electricity
It is pressed onto and is coupled to multiple micro-electromechanical switch mutual, including multiple gates.Each micro-electromechanical switch includes being arranged in substrate
On beam electrode.Beam includes the anchor section for being coupled to the beam electrode.The beam includes prolonging along first direction from the anchor section
The first beam portion stretched point；And the second beam portion extended along second direction opposite to the first direction from the anchor section
Point.First coordination electrode and the first contact electrode are arranged on the substrate, towards first beam portion point.Second control electricity
Pole and the second contact electrode are arranged on the substrate, towards second beam portion point.First coordination electrode and described
Second coordination electrode is coupled, to form the gate among the multiple gate.The multiple micro-electromechanical switch with serial arrangement,
At least one of arranged in parallel arranges.
Detailed description of the invention
These and other feature, aspect and advantage of the invention, will when being read with reference to the drawings described in detail below
Become to be best understood from.In the drawing, similar character representation similar component everywhere in figure, in which:
Fig. 1 is one or more surface coils according to an example embodiment of the invention, for decoupling coil system
MEMS (MEMS) device graphic representation；
Fig. 2 is the section view of MEMS device according to an example embodiment of the invention, with mems switch system；
Fig. 3 is the graphic representation according to the mems switch of an embodiment of Fig. 2；And
Fig. 4 is the graphic representation according to the mems switch of an embodiment of Fig. 2；
Fig. 5 is the illustrative circuitry diagram for being coupled to mutual multiple mems switches shown according to an example embodiment；
Fig. 6 is to show being coupled to mutual and be provided with the multiple of multiple impedance means according to an example embodiment
The illustrative circuitry of mems switch illustrates；
Fig. 7 is to show being coupled to mutual and be provided with the more of multiple impedance means according to another example embodiment
The illustrative circuitry of a mems switch illustrates；And
Fig. 8 is to show being coupled to mutual and be provided with multiple impedances dress according to another example embodiment also
The illustrative circuitry for the multiple mems switches set illustrates.
Specific embodiment
According to certain embodiments of the present invention, a kind of system include be coupled to it is mutual, with the multiple micro- of multiple gates
Electric mechanical switch.Each micro-electromechanical switch includes the beam electrode being arranged in substrate.Micro-electromechanical switch further comprises beam, the beam
With being coupled to the anchor section of beam electrode, the first beam portion extended from anchor section along first direction point and edge and first direction
The second beam portion that opposite second direction extends from anchor section point.Micro-electromechanical switch further includes towards the first beam portion point, arrangement
The first coordination electrode and the first contact electrode in substrate, and dividing towards the second beam portion, being arranged in substrate second
Coordination electrode and the second contact electrode.First coordination electrode and the second coordination electrode are coupled, to be formed in the multiple gate
Among gate.The multiple micro-electromechanical switch is arranged at least one of serial arrangement, arranged in parallel.
Referring to Fig.1, disclose a kind of for decoupling radio frequency (RF) device 15(for example, magnetic resonance imaging (MRI) system) in
Coil system 14 one or more surface coils 12 MEMS (MEMS) device 10.It should be noted that herein
Although disclosing MRI system, in other embodiments, MEMS device 10 can be used for other applications.For example,
In another embodiment, device 15 can be radar system.In the embodiment illustrated, MEMS device 10 allows to be switched
One or more surface coils 12, especially radio frequency (RF) magnetic resonance coil are isolated.In one embodiment, it is transmitted in MRI
During operation, MEMS device 10 is operable to decouple the surface coils 12 for being configured as receiving surface coil.One
In a embodiment, during MEMS device 10 is in the open state during transfer operation, surface coils 12(is received into RF coil)
It is decoupled from coil system 14.MEMS device 10 receive operation during be in closed state so that surface coils 12 with received
MR signal resonate and couple so that the received MR signal of institute is sent to RF receiver 16.MEMS device 10 is by switch control
Device 18 controls, and MEMS device 10 is switched to closed state from opening state by switch controller 18, and vice versa.Some
In embodiment, MEMS device 10 is not when coil system 14 is biased in normally open state (decoupled state).However,
In other embodiments, MEMS device 10 is not when coil system 14 is biased in normally closed state.
Herein it is to be noted that in other embodiments, MEMS device 10 can be about operation in different frequency
Different types of surface coil MR (herein also referred to as " surface coils ") use.The surface coils can
To be unifrequency or bifrequency (dual tuned) RF coil.In some embodiments, bifrequency RF coil includes ceoncentrically wound coil member
Part, the ceoncentrically wound coil element are tuned resonance in different frequencies, for example, altogether for one, carbon resonance and for one, proton
Vibration is resonated in Larmor (Larmor) frequency of carbon and proton, to induce the Larmor precession in carbon atom and proton.It should
It is noted that MEMS device 10 is not restricted to be coupled only to receiving surface coil.For example, MEMS device 10 can be coupled to
The coil only transmitted or the combination of transmission/receiving coil.
The various embodiments of MEMS device 10 are provided as the component of single mode or multi-modal magnetic resonance imaging system.
MRI system can be combined with different types of medical imaging system, the tomography that such as calculates (Computed Tomography,
CT), the tomography (SPECT) and ultrasonic system or energy that positron emission tomography (PET), single photon emission calculate
Enough generate any other system of image (the especially mankind).In addition, the various embodiments be not restricted in for pair
The medical imaging system that human subjects are imaged, but may include for nonhuman target, luggage, or the like
Be imaged animal doctor's or non-medical system.
MEMS device 10 can be coupled to one or more surface coils 12, for example, one or more receiving surface coils.
In one embodiment, single MEMS device 10 can be coupled to each surface coils 12.In another embodiment, individually
MEMS device 10 can be coupled to multiple surface coils 12.In one embodiment, independent MEMS device 10 can be coupled
Each of to surface coils 12.In addition, MEMS device 10 can be configured to all surface coils 12 or surface coils 12
In those of be selected and to be decoupled.Although surface coils 12 can specifically arrange to be shown, such as wherein Inside coil
Element and outer member form loop coil to (bifrequency or dual tuned RF coil part), but MEMS device 10 can be used to control
System decouples any kind of MRI coil, especially any kind of magnetic resonance reception surface coils or transmission surface line
Circle.It is to be noted that MEMS device 10 is not restricted to be coupled only to receiving surface coil.In one embodiment,
MEMS device 10 can be coupled to the coil only transmitted or combination transmission/receiving coil.
Referring to Fig. 2, MEMS device 10 is shown.In the embodiment illustrated, MEMS device 10 includes mems switch 20.
MEMS device 10 includes substrate 22, beam 24, beam electrode 26, the contact of the first and second coordination electrodes 28,30 and first and second
Electrode 32,34.In some embodiments, more than one substrate can be used.This back-to-back configuration can by or a substrate
Or multiple substrates instantiate.
In the embodiment illustrated, the first middle layer 36 is arranged in substrate 22.First coordination electrode 28 is via second
Middle layer 38 is arranged in the first middle layer 36.Second coordination electrode 30 is arranged in the first middle layer 36 via third middle layer 40
On.First contact electrode 32 is arranged in the first middle layer 36 via the 4th middle layer 42.Second contact electrode 34 is via the 5th
Middle layer 44 is arranged in the first middle layer 36.Beam electrode 26 is arranged in the first middle layer 36 via the 6th middle layer 37.?
Herein it is to be noted that the quantity of middle layer can be dependent on application and change.
Beam 24 includes anchor section 46, the first beam portion point 48 and the second beam portion point 50.In some embodiments, beam 24 can
Including more than one anchor section, wherein anchor section is electrically coupled to one another.In the embodiment illustrated, anchor section 46 is via in the 7th
Interbed 52 is coupled to beam electrode 26.First beam portion point 48 extends along first direction 54 from anchor section 46, and 50 edges of the second beam portion point
The second direction 56 opposite with first direction 54 extends from anchor section 46.First coordination electrode 28 and the first contact electrode 32 towards
First beam portion divides 48 to arrange.Second coordination electrode 30 and the second contact electrode 34 are arranged towards the second beam portion point 50.Institute
In the embodiment shown, the first coordination electrode 28 and the second coordination electrode 30 are coupled for forming gate 58.Gate 58 is any
The voltage source of type, for example, square-wave voltage source, which can be driven or biased mem S switch 20 is to cause MEMS to open
The bending of beam 24 or the inclination in 20 are closed, so that passing through power path (that is, closed state of mems switch 20) quilt of mems switch 20
It provides.Seed layer 60 is formed on beam 24, towards beam electrode 26, the first and second coordination electrodes 28,30, the first and second contacts
Electrode 32,34 and the first middle layer 36.
Beam 24 can be formed from different materials.For example, beam 24 can from one or more different metals, such as gold, billon,
Nickel, nickel alloy, tungsten, or the like formed.Substrate 22 may include silicon, silica, quartz, or the like, and middle layer can
Including silicon nitride, silica, adhesion layer, or the like.Electrode 26,28,30,32,34 may include metal, such as gold, platinum,
Tantalum, or the like.In one embodiment, electrode 26,28,30,32,34 may include metal oxide.It answers herein
When it is noted that the composition of beam disclosed herein 24, substrate 22 and electrode 26,28,30,32,34 is not to include all
, and can be dependent on application and change.Mems switch 20 can be used comprising deposition, anode processing, patterning (patterning),
Etching, or the like technology manufacture.
For example based on specific bending or tilt requirements, (such as need how much power is bent or inclined beams the size of beam 24
24) it can be variation.The size of beam 24 and configuration be also possible to based on be applied to gate 58 and beam electrode 26 between, be used to
The voltage of inclined beams 24.The size of beam 24 and configuration can also be the voltage based on the gate 58 for being used to bent beam 24.Herein
In it is to be noted that mems switch 20 can be formed from different materials and using different processes (such as based on for
The specific application (for example, MRI system application) of MEMS device 20), to ensure device in the case where not influencing environment properly
Operation is in specific environment.
In some embodiments, MEMS device 10 may include multiple mems switches 20, and the multiple mems switch 20 is in quilt
Whether it is in the mode of sending or receive when being coupled to surface coils based on such as imaging system (for example, MRI system), to distinguish
Operation or open or closed state in.In some embodiments, mems switch 20 can be coupled in series to form group.Certain
In embodiment, the set or group of mems switch 20 can be coupled in parallel to each other.
When there is no driving voltage to be applied between gate 58 and beam electrode 26, the first beam portion point 48 and the second beam portion point
50 are disposed in first position, make the first beam contact portion 62 and the second beam portion of the first beam portion point 48 in such a way that
50 the second beam contact portion 64 is divided to separate respectively with the first contact electrode 32 and the second contact electrode 34, this is called
" opening state ".When driving voltage is applied between gate 58 and beam electrode 26, the first beam portion point 48 and the second beam portion point
50 are biased to the second position from first position, make the first beam contact portion 62 and the second beam contact portion in such a way that
64 are divided to contact the first contact electrode 32 and the second contact electrode 34 respectively, to allow electric current from the first and second beam contact portions
62,64 the first and second contact electrodes 32,34 are flowed to, this is called " closed state ".
As discussed previously, MEMS RF switch is used for wireless device, because their low power characteristic and penetrating
The ability operated in frequency range.However, being blocked in path if conventional three terminal MEMS switches are provided to RF, in switch
In opening state, voltage is generated between contact electrode and coordination electrode.The voltage is because in contact electrode and beam electrode
Between capacitor and contact electrode and coordination electrode between capacitor have same order and be generated.If switch is hindering
The relatively low voltage of the disconnected gate voltage for being compared to switch, then the voltage may be bad.However, when contact electrode and beam electricity
When RF voltage between pole increases, more voltages will be generated across coordination electrode, and which increase the self-energizing risks of switch
(it leads to the damage of mems switch).
According to the embodiment of the present invention, two coordination electrodes, i.e. the first coordination electrode 28 and the second coordination electrode 30, by coupling
It closes to form gate 58.First coordination electrode 28 and the second coordination electrode 30 configure in such a, so that when swashing
When encouraging voltage and being applied between gate 58 and beam electrode 26, driving voltage is equably applied to the first coordination electrode 28 and the
Two coordination electrodes 30.This allows to motivate the first beam portion point 48 and the second beam portion point 50 using identical gate-control signal.
Referring to Fig. 3, the mems switch 20 including back-to-back orientation of the embodiment according to Fig. 2 is shown.Shown
Embodiment in, mems switch 20 have be coupled to contact electrode 32,34, be modeled as two triangles 66,68(each
Triangle tool is there are three capacitor) asymmetrical arrangement.Triangle 66 has the electricity between instruction gate 58 and the first beam portion point 48
Second capacitor 72 of the capacitor between the first capacitor device 70 of appearance, instruction gate 58 and the first contact electrode 32 and instruction
The third capacitor 74 of capacitor between first beam portion point 48 and the first contact electrode 32.Triangle 68 has instruction 58 Hes of gate
The of capacitor between 4th capacitor 76 of the capacitor between the second beam portion points 50, instruction gate 58 and the second contact electrode 34
6th capacitor 80 of the capacitor between five capacitors 78 and instruction the second beam portion point 50 and the second contact electrode 34.
Referring to Fig. 4, mems switch 20 includes the back-to-back orientation according to an embodiment of Fig. 2.In shown embodiment
In, mems switch 20 has similar as shown in Figure 3 arrange.In addition, switch 20 is modeled as having instruction gate 58 and beam
The capacitor 82 of capacitor between electrode 26.
As discussed above, when (wherein 48,50 points of the first and second beam portions point in the open state of mems switch 20
Not with first and second contact electrodes 32,34 separate) in when, radiofrequency signal blocking be performed.The electricity generated across mems switch 20
Briquetting includes high-frequency signal, this causes the capacitive couplings across capacitor in each of capacitor across mems switch 20.Make
For as a result, the voltage at beam electrode 26 is equal to one of the voltage across the first and second contact electrodes 32,34 in such configuration
Half.If the capacitor be it is equal, the voltage at gate 58 is also equal to the voltage across the first and second contact electrodes 32,34
Half.As such configuration as a result, the autoexcitation of switch 20 is prevented from.
The back-to-back configuration of mems switch 20 allows shown in Figure 2 in described two coordination electrodes 28,30() between
Telecommunication.In one embodiment, which completes via resistor, and in other embodiments, the telecommunication via
Capacitor and/or inductor are passively completed.In certain other embodiments, which uses control logic initiatively
To complete.The telecommunication causes the identical voltage at the coordination electrode both sides, and the voltage of the voltage and Liang Chu at gate
It is identical.Under conditions of the capacitor wherein across switch 20 is equal, the voltage generated between beam electrode and gate is close to zero, i.e.,
Make to be in the presence of having abundant higher radiofrequency signal.Mems switch 20 of demonstrating has the isolation electricity greater than 300 volts
Pressure, to prevent the autoexcitation of the switch 20 when mems switch 20 is in the open state middle.
According to certain embodiments of the present invention, between the first beam portion point and the first contact electrode, and in the second beam
Capacitor between part and the second contact electrode is identical.In some embodiments, in the first contact electrode and the first control
Capacitor between electrode, and between the second contact electrode and the second coordination electrode is identical.In a specific embodiment
In, the capacitor between beam and gate is greater than the capacitor between the first coordination electrode and the first contact electrode of at least twice.
Assembling configuration, process variability and layout of the symmetry of the back-to-back configuration of switch 20 based on switch.Addition
One or more elements to switch produce symmetrical arrangements, cause to be generated between the gate and beam electrode of switch
Residual voltage.In one embodiment, which can passively be subtracted between gate and beam electrode using capacitor
Gently.In another embodiment, which is able to use control logic and is initiatively mitigated.As discussed previously, show
Model switch may include one or more substrates.
In some embodiments, the service life of mems switch 20 can be by providing the first of the multiple capacitor and switch 20
It is enhanced with the second contact electrode 32,34 series connection.These capacitors promote by thermal switch voltage and thermal switch energy (that is,
The total electrical charge transmitted when the closure of switch) the two minimum.The realization is terminated to the influence of gate control logic in switch 20
When be especially advantageous.
Fig. 5 be show according to example embodiment, be coupled to mutual multiple mems switches 20 illustrative circuitry diagram.?
In shown embodiment, four mems switches 20 are shown coupled to each other.Two mems switches 20 string at top is shown
Connection is coupled to each other.Further, showing two mems switches 20 in bottom is also to be coupled in series to each other.It shows at top
Two mems switches 20 be coupled in parallel to that two mems switches 20 shown in bottom.
In other embodiments, the quantity and series/parallel arrangement of mems switch 20 can be changed.In one embodiment
In, multiple mems switches can be coupled only with connecting.In another embodiment, multiple mems switches can only be come with parallel connection
Coupling.The quantity of mems switch 20, which can be dependent on, specifically to be become using (for example, mems switch 20 operates in environment therein)
Change.For example, the quantity of mems switch 20 can be determined based on voltage pulse effect in the environment or RF environment of magnetic, so that every
Insulation pressure is overcome.Specifically, voltage is completely cut off based on RF, the quantity and configuration of mems switch 20 are alterable, so that believing from RF
Number autoexcitation be prevented from.
Fig. 6 be show according to Fig. 5 an example embodiment, be coupled to the illustrative circuitry of mutual multiple mems switches 20
Diagram.In addition, in the embodiment illustrated, two impedance means 84,86 are coupled to the first of each mems switch 20
With the second contact electrode 32,34.Specifically, described two impedance means 84,86 are inductors.In another embodiment, institute
Stating two impedance means can be resistor.In other embodiments, the quantity of impedance means can be dependent on application and change.Institute
Impedance means 84,86 are stated to promote the voltage across the first and second contact electrodes 32,34 during the switch operation of mems switch
It minimizes.
Fig. 7 is the illustrative circuitry for showing according to an example embodiment, being coupled in series to mutual two mems switches 20
Diagram.In the embodiment illustrated, four impedance means 84,86,88,90 are coupled to the first of each mems switch 20
With the second contact electrode 32,34 and beam 24.Specifically, four impedance means 84,86,88,90 are inductors.Another
In a embodiment, four impedance means can be resistor.In another embodiment also, four impedances dress
It sets and can be capacitor.In other embodiments, the quantity of impedance means can be dependent on application and change.
It is connect during being closed the multiple micro-electromechanical switch 20 in beam electrode 26 and first according to shown embodiment
The voltage that touched electrode 32, second contacts between electrode 34 is maintained below 0.5 volt via the impedance means 84,86,88,90
It is special.
Fig. 8 is the illustrative circuitry for showing according to an example embodiment, being coupled in series to mutual two mems switches 20
Diagram.In the embodiment illustrated, four impedance means 84,86,88,90 are coupled to the first of each mems switch 20
With the second contact electrode 32,34 and beam 24.In addition, two impedance means 92,94 are coupled to the door of each mems switch
Control 58.Further, other two impedance means 96,98 is coupled to the beam 24 of each mems switch 20.Specifically, impedance
Device 92,94,96,98 is resistor.In another embodiment, the additional impedance means can be capacitor.Also
In another embodiment having, the additional impedance means can be inductor.In other embodiments, the number of impedance means
Amount can be dependent on application and change.According to shown embodiment, line (wire) (not shown) quilt of Far Left and rightmost
It is coupled to high voltage (for example, 1500 volts), high-frequency (for example, being greater than 50 MHz) source, for example, magnetic resonance coil element.When
When the multiple switch 20 in high voltage crossing opening state, due to the parasitism of the impedance means of the multiple mems switch 20
Impedance, and the parasitic capacitance more particularly between the beam 24 of each switch 20 and gate 58, the voltage applied is by opening
20 are closed to share.
According to the embodiment of the present invention, during sharing driving voltage between the multiple micro-electromechanical switch, beam electrode 26
Voltage between gate 58 is maintained via impedance means 92,94,96,98 lower than 10 volts.When voltage is in beam electrode and door
When being established between control, the isolation capacity of switch is lowered.Such voltage is the parasitic capacitance due to switch (from beam electrode to door
Control) and be established.Because the impedance between the multiple gate of switch starts to influence the performance of switch, therefore established
Voltage starts to fail (break down) when a series of mems switches are coupled to each other.For example, mutual for being coupled to
Multiple switch, if the impedance between the gate route and leftmost mems switch of central mems switch is smaller, this is most left
The beam voltage of the gate voltage of the switch on side towards central mems switch is mobile, so as to cause the reduction in isolation voltage.According to
The embodiment of the present invention, when impedance is added between gate, such voltage is mobile to be reduced.The size of impedance between gate
It is to be determined based on the capacitor between the gate of each mems switch and beam electrode.
As discussed previously, the electricity of the possible several times of back-to-back mems switches of the voltage generated in magnetic resonance coil
Pressure-volume amount.According to the embodiment of Fig. 5-8, the multiple mems switch 20 is configured to share applying across the multiple mems switch 20
Making alive prevents the excess voltage from the first and second contact electrodes 32,34 to gate 58 from coupling and maintain bridging touched electrode
32,34 low-voltage (during switching operation).In one embodiment, the multiple mems switch 20 is configured to equably divide
Enjoy the application voltage across the multiple mems switch 20.In a specific embodiment, the multiple mems switch 20 is configured to
The coupling of the voltage between the multiple mems switch is controlled via the multiple gate 58.The multiple impedance means promote
Modify the influence of the outside stimulus around the multiple micro-electromechanical switch 20.
Herein it is to be noted that the service life of mems switch can be based on being in closed state in mems switch
When, bridge the amount of touched electrode residual voltage generated.Such voltage can be commonly referred to as " thermal switch voltage ".Thermal switch electricity
Pressure can be given birth to based on the residual voltage from system, and also based on from gate route to the coupling energy of contact electrode
At.The residual voltage contacted on electrode is due to gating and contacting the parasitic capacitance between electrode.RF voltage is swashing wherein
It encourages in the application being removed before switch, due to low opening state capacitor and low leakage current, therefore may have remaining low
Frequency or D/C voltage still across switch keep.According to the embodiment of the present invention, such effect in each switch by permitting
Perhaps the telecommunication between electrode and beam electrode is contacted to be mitigated.The telecommunication can via impedance means (such as, resistor,
Inductor, capacitor, or the like) complete.Such telecommunication allows the low frequency component of signal to pass through the switch opened,
Desired high-frequency is maintained to block simultaneously.In some embodiments, single gate is used to motivate the array of concatenated switch 20,
This allows to double gate voltage in the case where not increasing for additional gate the case where needs.
Although only certain features of the invention are shown and described herein, those skilled in the art
It will expect many modifications and changes.Therefore, it is understood that, appended claims, which are intended to cover, falls into real essence of the invention
All such modifications and changes in mind.
Claims (14)
1. a kind of system for micro-electromechanical switch, comprising:
It is coupled to multiple micro-electromechanical switch mutual, including multiple gates, wherein each micro-electromechanical switch further comprises:
Substrate；
Beam electrode, is arranged on the substrate；
Beam, including be coupled to the anchor section of the beam electrode, the first beam portion extended from the anchor section along first direction point, with
And the second beam portion point extended along second direction opposite to the first direction from the anchor section；
First coordination electrode and the first contact electrode, first coordination electrode and the first contact electrode are disposed in described
In substrate, towards first beam portion point；And
Second coordination electrode and the second contact electrode, second coordination electrode and the second contact electrode are disposed in described
In substrate, towards second beam portion point；Wherein first coordination electrode and second coordination electrode are coupled, to be formed
Gate among the multiple gate；And
At least one impedance means comprising the spurious impedance of the multiple micro-electromechanical switch, at least one described impedance means
Be coupled to each micro-electromechanical switch the multiple gate of (i), the (ii) first contact electrode and first beam portion point,
(iii) at least one of the second contact electrode and second beam portion point, the described beam of (iv)；
Wherein, the multiple micro-electromechanical switch is arranged at least one of serial arrangement, arranged in parallel.
2. the system as claimed in claim 1, wherein each micro-electromechanical switch includes micro electronmechanical RF switch.
3. the system as claimed in claim 1, wherein each micro-electromechanical switch, which is disposed in, is configured to grasp in radio-frequency region
In the device of work.
4. system as claimed in claim 3, wherein described device includes magnetic resonance imaging system, the magnetic resonance imaging system
Including single mode imaging system or multi-mode imaging system.
5. system as claimed in claim 4, wherein each described micro-electromechanical switch is configured to the magnetic resonance imaging system
One or more radio frequency reception surface coils, the radio frequency transmission surface coils of system are coupled and are decoupled.
6. a kind of method for micro-electromechanical switch, comprising:
Equably driving voltage is applied to and is coupled to multiple micro-electromechanical switch mutual, including multiple gates, wherein each
A micro-electromechanical switch further comprises:
Substrate；
Beam electrode, is arranged on the substrate；
Beam, including be coupled to the anchor section of the beam electrode, the first beam portion extended from the anchor section along first direction point, with
And the second beam portion point extended along second direction opposite to the first direction from the anchor section；
First coordination electrode and the first contact electrode, first coordination electrode and the first contact electrode are disposed in described
In substrate, towards first beam portion point；And
Second coordination electrode and the second contact electrode, second coordination electrode and the second contact electrode are disposed in described
In substrate, towards second beam portion point；Wherein first coordination electrode and second coordination electrode are coupled, to be formed
Gate among the multiple gate；And
The spurious impedance for the multiple micro-electromechanical switch is generated via at least one impedance means；
The (i) that wherein at least one described impedance means are coupled to each micro-electromechanical switch is the multiple to be gated, described in (ii)
First contacts electrode and first beam portion point, the (iii) second contact electrode and second beam portion point, the (iv) beam
At least one of；
Wherein, the multiple micro-electromechanical switch is arranged at least one of serial arrangement, arranged in parallel.
7. further comprising method as claimed in claim 6, during the closure of the multiple micro-electromechanical switch via described
At least one impedance means ties up the voltage between the beam electrode and the first contact electrode, the second contact electrode
It holds lower than 0.5 volt.
8. further comprising method as claimed in claim 6, the multiple to modify via at least one described impedance means
The influence of outside stimulus around micro-electromechanical switch.
9. method as claimed in claim 6, further comprising sharing driving voltage across the multiple micro-electromechanical switch.
10. method as claimed in claim 9 further comprises sharing the excitation electricity between the multiple micro-electromechanical switch
During pressure, the voltage between the beam electrode and the gate is maintained at a below 10 via at least one described impedance means
Volt.
11. method as claimed in claim 6, further comprising the parasitic capacitance generated between the beam and the gate.
12. method as claimed in claim 6, further comprise control from it is described first and second contact electrode at least one
Voltage to the gate couples.
13. method as claimed in claim 6, further comprising being established by cable via the multiple gate to control the multiple microcomputer
Voltage coupling between pass.
14. method as claimed in claim 6, further comprising will be across the first and second contacts electricity during switching operation
The voltage minimization of pole.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/314344 | 2014-06-25 | ||
| US14/314,344 US9117610B2 (en) | 2011-11-30 | 2014-06-25 | Integrated micro-electromechanical switches and a related method thereof |
| PCT/US2015/037155 WO2015200307A2 (en) | 2014-06-25 | 2015-06-23 | Integrated micro-electromechanical switches and a related method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106415772A CN106415772A (en) | 2017-02-15 |
| CN106415772B true CN106415772B (en) | 2019-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580034300.4A Active CN106415772B (en) | 2014-06-25 | 2015-06-23 | Integrated micro-electro-mechanical switch and its correlation technique |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3161847B1 (en) |
| JP (1) | JP6781048B2 (en) |
| CN (1) | CN106415772B (en) |
| CA (1) | CA2952661C (en) |
| SG (1) | SG11201610176YA (en) |
| WO (1) | WO2015200307A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107424875B (en) * | 2017-07-24 | 2020-06-09 | 中北大学 | Cross single-pole triple-throw switch |
| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN114758928A (en) * | 2017-07-24 | 2022-07-15 | 中北大学 | Straight plate type practical radio frequency MEMS switch |
| MX2021000152A (en) * | 2018-06-28 | 2021-05-27 | Menlo Microsystems Inc | Switch self-actuation mitigation using a tracking signal. |
| CN111064456B (en) * | 2019-12-04 | 2023-08-29 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
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| US6037719A (en) * | 1998-04-09 | 2000-03-14 | Hughes Electronics Corporation | Matrix-addressed display having micromachined electromechanical switches |
| CN1519877A (en) * | 2002-12-05 | 2004-08-11 | 欧姆龙株式会社 | Contact switch and appts. provided with contact switch |
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| EP1426992A3 (en) * | 2002-12-05 | 2005-11-30 | Omron Corporation | Electrostatic mems switch |
| KR100661347B1 (en) * | 2004-10-27 | 2006-12-27 | 삼성전자주식회사 | Micro thin film structure, micro electro mechanical system switch using the same and manufacturing method of them |
| US8610519B2 (en) * | 2007-12-20 | 2013-12-17 | General Electric Company | MEMS microswitch having a dual actuator and shared gate |
| US8749237B2 (en) * | 2011-01-11 | 2014-06-10 | General Electric Company | Optically controlled MEMS switch and method of using the same |
| US8638093B2 (en) * | 2011-03-31 | 2014-01-28 | General Electric Company | Systems and methods for enhancing reliability of MEMS devices |
| US20130134018A1 (en) * | 2011-11-30 | 2013-05-30 | General Electric Company | Micro-electromechanical switch and a related method thereof |
-
2015
- 2015-06-23 JP JP2016574280A patent/JP6781048B2/en active Active
- 2015-06-23 WO PCT/US2015/037155 patent/WO2015200307A2/en active Application Filing
- 2015-06-23 CA CA2952661A patent/CA2952661C/en active Active
- 2015-06-23 EP EP15810992.6A patent/EP3161847B1/en active Active
- 2015-06-23 CN CN201580034300.4A patent/CN106415772B/en active Active
- 2015-06-23 SG SG11201610176YA patent/SG11201610176YA/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037719A (en) * | 1998-04-09 | 2000-03-14 | Hughes Electronics Corporation | Matrix-addressed display having micromachined electromechanical switches |
| CN1519877A (en) * | 2002-12-05 | 2004-08-11 | 欧姆龙株式会社 | Contact switch and appts. provided with contact switch |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015200307A2 (en) | 2015-12-30 |
| EP3161847A2 (en) | 2017-05-03 |
| CN106415772A (en) | 2017-02-15 |
| EP3161847B1 (en) | 2023-05-31 |
| JP6781048B2 (en) | 2020-11-04 |
| CA2952661A1 (en) | 2015-12-30 |
| WO2015200307A3 (en) | 2016-02-25 |
| JP2017527949A (en) | 2017-09-21 |
| CA2952661C (en) | 2023-01-17 |
| EP3161847A4 (en) | 2018-01-31 |
| SG11201610176YA (en) | 2017-01-27 |
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