CN106415772A - Integrated micro-electromechanical switches and a related method thereof - Google Patents
Integrated micro-electromechanical switches and a related method thereof Download PDFInfo
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- CN106415772A CN106415772A CN201580034300.4A CN201580034300A CN106415772A CN 106415772 A CN106415772 A CN 106415772A CN 201580034300 A CN201580034300 A CN 201580034300A CN 106415772 A CN106415772 A CN 106415772A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2239/00—Miscellaneous
- H01H2239/004—High frequency adaptation or shielding
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Abstract
A system includes a plurality of micro-electromechanical switches including a plurality of gates, coupled to each other. Each micro-electromechanical switch includes a beam electrode disposed on a substrate. A beam includes an anchor portion coupled to the beam electrode. The beam includes a first beam portion extending from the anchor portion along a first direction; and a second beam portion extending from the anchor portion along a second direction opposite to the first direction. A first control electrode and a first contact electrode are disposed on the substrate, facing the first beam portion. A second control electrode and a second contact electrode are disposed on the substrate, facing the second beam portion. The first control electrode and the second control electrode are coupled to form a gate among the plurality of gates. The plurality of micro-electromechanical switches is arranged in at least one of a series arrangement, parallel arrangement.
Description
To Cross-Reference to Related Applications
This application is entitled " the A MICRO-ELECTROMECHANICAL SWITCH AND submitting on November 30th, 2011
The partly continuous case of the U.S. Patent application No. 13/307262 of A RELATED METHOD THEREOF ".
Background technology
The present invention relates generally to microelectromechanicdevices devices, and more specifically it relates to integrated micro-electro-mechanical switch.
MEMS（MEMS）Device has extensively various applications, and generally in commercial product.A type of
MEMS device is mems switch.Common mems switch includes the one or more mems switches to arrange with array.MEMS opens
Close the application being very suitable for including mobile phone, wireless network, communication system and radar system.In a wireless device,
Mems switch can be used as duplexer, mode switch, transmission/reception switch, and the like.
Common mems switch using the plated metal cantilever being supported at one end and is arranged in the another of metal cantilever
The electricity at end touches position.Coordination electrode is positioned in below metal cantilever.Direct current（“DC”）Excitation（actuation）Voltage is across control
Electrode is applied to metal cantilever, force metal cantilever to be bent downwardly and with bottom signal trace（trace）Form electrical contact.One
Denier establishes electrical contact, then closing of circuit and the signal of telecommunication can pass through metal cantilever to bottom signal traces.
A type of MEMS device is MEMS radio frequency（RF）Switch.Low driving power characteristic due to MEMS RF switch
And its ability of operating in radio-frequency region, MEMS RF switch is used for wireless device.However, working as significant RF voltage quilt
It is applied to beam（beam）When between electrode and contact electrode, problem continually occurs in MEMS RF switch.Such voltage can coupling
Close in coordination electrode, and autoexcitation is carried out to switch.In other words, these mems switches are generally subjected to the cantilever in its breaker in middle
Beam is due to high voltage RF signal thus can encourage in "Off" state（Autoexcitation）Problem.Thus, high voltage RF signal produces
Enough electrostatic force is come the beam that to pull down switch, and causes fault.
Another shortcoming being associated with MEMS RF switch is based on the residual amount of energy contacting electrode generation and generates
" thermal switch " voltage.Such residual amount of energy can be based on the residual voltage from system and from gate（gate）Circuit connects to described
The coupling energy of touched electrode is being generated.
Exist for a kind of needs of the system of raising, it overcomes and voltage isolation（standoff）Capacity
（capability）And the shortcoming that the generation of thermal switch voltage is associated.
Content of the invention
According to an example embodiment, disclose a kind of have be coupled to each other, multiple microcomputers including multiple gates
The system of electric switch.Each micro-electromechanical switch includes being arranged in suprabasil beam electrode.Beam includes being coupled to described beam electrode
Anchor section.The first beam portion that described beam includes extending from described anchor section in the first direction is divided；And edge and described first party
The second beam portion extending from described anchor section to contrary second direction is divided.First coordination electrode contacts electrode with first and is arranged
On the substrate, divide towards described first beam portion.Second coordination electrode contacts electrode with second and is arranged on the substrate,
Divide towards described second beam portion.Described first coordination electrode and described second coordination electrode are coupled, to form the plurality of door
Gate among control.The plurality of micro-electromechanical switch to be arranged with least one of serial arrangement, arranged in parallel.
According to another example embodiment, disclose a kind of correlating method.Methods described comprises equably to apply excitation electricity
Be pressed onto be coupled to each other, include multiple gates multiple micro-electromechanical switch.Each micro-electromechanical switch includes being arranged in substrate
On beam electrode.Beam includes being coupled to the anchor section of described beam electrode.Described beam includes prolonging from described anchor section in the first direction
The first beam portion stretched is divided；And the second beam portion extending from described anchor section along second direction opposite to the first direction
Point.First coordination electrode contacts electrode and is arranged on the substrate with first, divides towards described first beam portion.Second controls electricity
Pole contacts electrode and is arranged on the substrate with second, divides towards described second beam portion.Described first coordination electrode and described
Second coordination electrode is coupled, to form the gate among the plurality of gate.The plurality of micro-electromechanical switch with serial arrangement,
At least one of arranged in parallel is arranging.
Brief description
The these and other feature of the present invention, aspect and advantage, will when being read with reference to the drawings described in detail below
Become to be best understood from.In the drawing, similar character representation is in the part similar everywhere of figure, wherein：
Fig. 1 is the micro- of an one or more surface coils example embodiment, being used for decoupling coil system according to the present invention
Mechatronic Systems（MEMS）The graphic representation of device；
Fig. 2 is the section view of a MEMS device example embodiment, having mems switch system according to the present invention；
Fig. 3 is the graphic representation of the mems switch of the embodiment according to Fig. 2；And
Fig. 4 is the graphic representation of the mems switch of the embodiment according to Fig. 2；
Fig. 5 is the illustrative circuitry diagram illustrating the multiple mems switches being coupled to each other according to an example embodiment；
Fig. 6 be illustrate according to an example embodiment be coupled to each other and multiple MEMS of being provided with multiple impedance means open
The illustrative circuitry diagram closed；
Fig. 7 be illustrate according to another example embodiment be coupled to each other and be provided with multiple impedance means multiple
The illustrative circuitry diagram of mems switch；And
Fig. 8 be illustrate according to also have another example embodiment be coupled to each other and be provided with multiple impedance means
The illustrative circuitry diagram of multiple mems switches.
Specific embodiment
According to certain embodiments of the present invention, a kind of system include being coupled to each other, there are multiple gates multiple micro-
Electric mechanical switch.Each micro-electromechanical switch includes being arranged in suprabasil beam electrode.Micro-electromechanical switch further includes beam, this beam
There is the anchor section being coupled to beam electrode, the first beam portion extending from anchor section in the first direction is divided and edge and first direction
The second beam portion that contrary second direction extends from anchor section is divided.Micro-electromechanical switch also includes divide, arrangement towards the first beam portion
Contact electrode with first in suprabasil first coordination electrode, and divide towards the second beam portion, be arranged in suprabasil second
Coordination electrode contacts electrode with second.First coordination electrode and the second coordination electrode are coupled, to be formed at the plurality of gate
Among gate.The plurality of micro-electromechanical switch to be arranged with least one of serial arrangement, arranged in parallel.
With reference to Fig. 1, disclose one kind and be used for decoupling radio frequency（RF）Device 15（For example, nuclear magnetic resonance（MRI）System）In
One or more surface coils 12 of coil system 14 MEMS（MEMS）Device 10.Herein should be noted that
Although disclosing MRI system, in other embodiments, MEMS device 10 can be used for other applications.For example, exist
In another embodiment, device 15 can be radar system.In the embodiment illustrated, MEMS device 10 allows to be switched
To isolate one or more surface coils 12, particularly radio frequency（RF）Magnetic resonance coil.In one embodiment, transmit in MRI
During the operation, MEMS device 10 is operable to the surface coils 12 being configured as receiving surface coil are decoupled.One
In individual embodiment, MEMS device 10 is in open mode during transfer operation, by surface coils 12（Receive RF coil）
Decouple from coil system 14.MEMS device 10 receive during the operation be in closure state so that surface coils 12 with received
MR signal resonate and couple so that the MR signal being received is sent to RF receptor 16.MEMS device 10 is by on-off control
Controlling, MEMS device 10 is switched to closure state from open mode to device 18 by switch controller 18, and vice versa.At some
In embodiment, MEMS device 10 is in normally open state when coil system 14 does not bias（Decoupled state）In.However,
In other embodiments, MEMS device 10 is in normally closed state when coil system 14 does not bias.
Herein it is to be noted that in other embodiments, MEMS device 10 can be with regard to operation in different frequency
Different types of surface coil MR（Herein also referred to as " surface coils "）To use.Described surface coils can
To be unifrequency or bifrequency（Dual tuned）RF coil.In certain embodiments, bifrequency RF coil includes ceoncentrically wound coil unit
Part, described ceoncentrically wound coil element is tuned to resonate in different frequencies, and for example, for carbon, one is resonated and common for one, proton
Shake, that is, the Larmor resonating in carbon and proton（Larmor）Frequency, to induce the Larmor precession in carbon atom and proton.Should
It is noted that MEMS device 10 is not constrained to be coupled only to receiving surface coil.For example, MEMS device 10 can be coupled to
The combination of the only coil of transmission or transmission/receiving coil.
The various embodiments of MEMS device 10 are provided as single mode or the part of multi-modal magnetic resonance imaging system.
MRI system can be combined with different types of medical imaging system, the tomography of such as calculating（Computed Tomography,
CT）, PET (positron emission tomography)（PET）, single photon emission calculate tomography（SPECT）, and ultrasonic system, or energy
Enough generate image（The particularly mankind）Any other system.Additionally, described various embodiment is not restricted in for right
The medical imaging system that human subjects are imaged, but can include for nonhuman target, luggage, or the like
Veterinary's or non-medical the system being imaged.
MEMS device 10 can be coupled to one or more surface coils 12, for example, one or more receiving surface coils.
In one embodiment, single MEMS device 10 can be coupled to each surface coils 12.In another embodiment, single
MEMS device 10 can be coupled to multiple surface coils 12.In one embodiment, independent MEMS device 10 can be coupled
Each of to surface coils 12.In addition, MEMS device 10 can be configured to all of surface coils 12 or surface coils 12
In selected those decoupled.Although surface coils 12 can specifically arrange to be illustrated, such as wherein Inside coil
Element and outer member form loop coil pair（Bifrequency or dual tuned RF coil part）, but MEMS device 10 can be used to control
System any kind of MRI coil is decoupled, particularly any kind of magnetic resonance reception surface coils or transmission surface line
Circle.It is to be noted that MEMS device 10 is not constrained to be coupled only to receiving surface coil.In one embodiment,
MEMS device 10 can be coupled to coil or the combination transmission/receiving coil of only transmission.
With reference to Fig. 2, MEMS device 10 is illustrated.In the embodiment illustrated, MEMS device 10 includes mems switch 20.
MEMS device 10 includes substrate 22, beam 24, beam electrode 26, the first and second coordination electrodes 28,30, and the first and second contacts
Electrode 32,34.In certain embodiments, more than one substrate can be used.This back-to-back configuration can be passed through or a substrate
Or multiple substrate carrys out instantiation.
In the embodiment illustrated, the first intermediate layer 36 is arranged in substrate 22.First coordination electrode 28 is via second
Intermediate layer 38 is arranged on the first intermediate layer 36.Second coordination electrode 30 is arranged in the first intermediate layer 36 via the 3rd intermediate layer 40
On.First contact electrode 32 is arranged on the first intermediate layer 36 via the 4th intermediate layer 42.Second contact electrode 34 is via the 5th
Intermediate layer 44 is arranged on the first intermediate layer 36.Beam electrode 26 is arranged on the first intermediate layer 36 via the 6th intermediate layer 37.?
Herein it is to be noted that the quantity in intermediate layer can be dependent on application and changes.
Beam 24 includes anchor section 46, the first beam portion divide 48 and second beam portion divide 50.In certain embodiments, beam 24 can
Including more than one anchor section, wherein anchor section is electrically coupled to one another.In the embodiment illustrated, anchor section 46 is via in the 7th
Interbed 52 is coupled to beam electrode 26.First beam portion divides 48 54 to extend from anchor section 46 in the first direction, and the second beam portion divides 50 edges
The second direction 56 contrary with first direction 54 extends from anchor section 46.First coordination electrode 28 contact with first electrode 32 towards
First beam portion divides 48 to arrange.Second coordination electrode 30 contacts electrode 34 with second and divides 50 to arrange towards the second beam portion.Institute
In the embodiment illustrating, the first coordination electrode 28 and the second coordination electrode 30 are coupled for forming gate 58.Gate 58 is any
The voltage source of type, for example, square-wave voltage source, this square-wave voltage source can drive or biased mem S switch 20 is to cause MEMS to open
Close the beam 24 in 20 to bend or tilt so that passing through the power path of mems switch 20（That is, the closure state of mems switch 20）Quilt
There is provided.Seed Layer 60 is formed on beam 24, towards beam electrode 26, the first and second coordination electrodes 28,30, the first and second contacts
Electrode 32,34, and the first intermediate layer 36.
Beam 24 can be formed from different materials.For example, beam 24 can from one or more different metals, such as gold, billon,
Nickel, nickel alloy, tungsten, or the like being formed.Substrate 22 may include silicon, Silicon stone, quartz, or the like, and intermediate layer can
Including silicon nitride, silicon oxide, adhesion layer, or the like.Electrode 26,28,30,32,34 may include metal, such as gold, platinum,
Tantalum, or the like.In one embodiment, electrode 26,28,30,32,34 may include metal-oxide.Herein should
When it is noted that the composition of beam disclosed herein 24, substrate 22 and electrode 26,28,30,32,34 is not including all
, and can be dependent on application and change.Mems switch 20 can use and comprise deposition, anodising, patterning（patterning）、
Etching, or the like technology manufacturing.
The size of beam 24 is for example based on specific bending or tilt requirements（All to bend or inclined beams if desired for how much power
24）It can be change.The size of beam 24 and configuration can also be based on be applied to gate 58 and beam electrode 26 between, for
The voltage of inclined beams 24.The size of beam 24 and configuration can also be the voltage based on the gate 58 for bent beam 24.Herein
In it is to be noted that mems switch 20 can be formed from different materials with using different processes（For example be based on for
The application-specific of MEMS device 20（For example, MRI system application））, with guarantee device in the case of not affecting environment rightly
Operation is in specific environment.
In certain embodiments, MEMS device 10 may include multiple mems switches 20, and the plurality of mems switch 20 is in quilt
It is coupled to during surface coils and be based on such as imaging system（For example, MRI system）Whether it is in transmission or reception pattern, to distinguish
Operation open or closure state in.In certain embodiments, mems switch 20 can couple to form group in series.Some
In embodiment, the set of mems switch 20 or group can be coupled in parallel to each other.
When do not have driving voltage be applied in gate 58 and beam electrode 26 between when, the first beam portion divide 48 and second beam portion divide
50 are disposed in primary importance, make the first beam contact portion 62 and the second beam portion that the first beam portion divides 48 in such a way that
Points 50 the second beam contact portion 64 contact electrode 32 and second respectively and contacts electrode 34 and separates with first, and this is called
" open mode ".When driving voltage be applied in gate 58 and beam electrode 26 between when, the first beam portion divide 48 and second beam portion divide
50 are biased to the second position from primary importance, make the first beam contact portion 62 and the second beam contact site in such a way that
Divide 64 to contact the first contact electrode 32 respectively and contact electrode 34 with second, thus allowing electric current from the first and second beam contact portions
62nd, 64 flow to the first and second contact electrodes 32,34, and this is called " closure state ".
As discussed previously, MEMS RF switch is used for wireless device, because their low power characteristic and penetrating
The ability of operation in frequency scope.If however, conventional three terminal MEMS switches are provided to RF blocking in path, in switch
In open mode, voltage is generated between contact electrode and coordination electrode.This voltage is because in contact electrode and beam electrode
Between electric capacity there is same order and be generated with contacting the electric capacity between electrode and coordination electrode.If switch is in resistance
The relatively low voltage of the disconnected gate voltage being compared to switch, then this voltage is probably bad.However, when contact electrode and beam electricity
When RF voltage between pole increases, more voltages will be generated across coordination electrode, which increase the self-energizing risk of switch
（It leads to the damage of mems switch）.
According to embodiments of the invention, two coordination electrodes, i.e. the first coordination electrode 28 and the second coordination electrode 30, by coupling
Close and to form gate 58.First coordination electrode 28 and the second coordination electrode 30 to configure in such a and to swash so that working as
When encouraging voltage and being applied between gate 58 and beam electrode 26, driving voltage is equably applied to the first coordination electrode 28 and the
Two coordination electrodes 30.This allow to encourage using identical gate-control signal the first beam portion divide 48 and second beam portion divide 50.
With reference to Fig. 3, show the mems switch 20 of the back-to-back orientation of inclusion of an embodiment according to Fig. 2.Shown
Embodiment in, mems switch 20 have be coupled to contact electrode 32,34, be modeled as two trianglees 66,68（Each
Triangle has three capacitors）Asymmetrical arrangement.Triangle 66 has instruction gate 58 and the first beam portion divides the electricity between 48
The second capacitor 72 of electric capacity between the first capacitor 70, instruction gate 58 and the first contact electrode 32 that hold and instruction
First beam portion divides 48 and first the 3rd capacitors 74 contacting the electric capacity between electrode 32.Triangle 68 has instruction gate 58 Hes
Second beam portion divides the of the electric capacity between the 4th capacitor 76 of the electric capacity between 50, instruction gate 58 and the second contact electrode 34
Five capacitors 78 and instruction the second beam portion divide 50 and second the 6th capacitors 80 contacting the electric capacity between electrode 34.
With reference to Fig. 4, mems switch 20 includes the back-to-back orientation of the embodiment according to Fig. 2.In shown embodiment
In, mems switch 20 has similar as shown in Figure 3 arrangement.In addition, switch 20 is modeled as thering is instruction gate 58 and beam
The capacitor 82 of the electric capacity between electrode 26.
As discussed above, when mems switch 20 is in open mode（Wherein first and second beam portions divide 48,50 points
Do not contact electrode 32,34 with first and second to separate）When middle, radiofrequency signal blocks and is performed.The electricity generating across mems switch 20
Briquetting includes high-frequency signal, and this causes the capacitive couplings in each of the electric capacity across mems switch 20 across electric capacity.Make
For result, in such configuration, the voltage at beam electrode 26 is equal to of the voltage across the first and second contact electrodes 32,34
Half.If described electric capacity is equal, the voltage at gate 58 is also equal to across the first and second voltages contacting electrodes 32,34
Half.As the result of such configuration, the autoexcitation of switch 20 is prevented from.
The back-to-back configuration of mems switch 20 allows in described two coordination electrodes 28,30（Shown in Fig. 2）Between
Telecommunication.In one embodiment, this telecommunication to complete via resistor, and in other embodiments, this telecommunication via
Capacitor and/or inducer passively to complete.In some other embodiments, this telecommunication uses control logic on one's own initiative
To complete.This telecommunication causes identical voltage at described coordination electrode both sides, and the voltage of the voltage at gate and Liang Chu
Identical.Wherein under conditions of the electric capacity of switch 20 is equal, the voltage generating between beam electrode and gate close to zero, that is,
Make to be in the presence of having fully higher radiofrequency signal.Demonstration mems switch 20 has the isolation electricity more than 300 volts
Pressure, to stop the autoexcitation of the switch 20 when mems switch 20 is in open mode.
According to certain embodiments of the present invention, divide and the first contact electrode between in the first beam portion, and in the second beam
Electric capacity between part and the second contact electrode is identical.In certain embodiments, in the first contact electrode and the first control
Between electrode, and the electric capacity between the second contact electrode and the second coordination electrode is identical.In a specific embodiment
In, the electric capacity between beam and gate is more than the electric capacity between the first coordination electrode and the first contact electrode of at least twice.
The symmetry of the back-to-back configuration of switch 20 is based on the assembling configuration switching, process variability and layout.Add
One or more elements to switch can generate symmetrical arrangements, causes to be generated between the gate and beam electrode of switch
Residual voltage.In one embodiment, this residual voltage passively can be subtracted using capacitor between gate and beam electrode
Gently.In another embodiment, this residual voltage can be mitigated on one's own initiative using control logic.As discussed previously, show
Model switch may include one or more substrates.
In certain embodiments, the life-span of mems switch 20 can be by providing the first of the plurality of capacitor and switch 20
Contact electrode 32,34 with second and connect to be enhanced.These capacitors promote thermal switch voltage and thermal switch energy（That is, exist
The total electrical charge transmitted during the closure of switch）The two minimizes.This realization is terminated to the impact of gate control logic in switch 20
When be especially advantageous.
Fig. 5 is the illustrative circuitry diagram illustrating according to example embodiment, being coupled to multiple mems switches 20 each other.?
In shown embodiment, four mems switches 20 are shown coupled to each other.Two mems switches 20 being shown in top are gone here and there
Connection is coupled to each other.Further, two mems switches 20 being shown in bottom are also to be coupled in series to each other.It is shown in top
Two mems switches 20 be coupled in parallel to be shown in that two mems switches 20 of bottom.
In other embodiments, quantity and the series/parallel arrangement of mems switch 20 can be changed.In an embodiment
In, multiple mems switches can only be coupled with connecting.In another embodiment, multiple mems switches can be only with parallel next
Coupling.The quantity of mems switch 20 can be dependent on specific application（For example, mems switch 20 operates in environment therein）And become
Change.For example, in the environment or RF environment of magnetic, the quantity of mems switch 20 can be determined based on potential pulse effect so that every
Insulation pressure is overcome.Specifically, voltage, the quantity of mems switch 20 and configuration alterable are completely cut off so that believing from RF based on RF
Number autoexcitation be prevented from.
Fig. 6 is an illustrative circuitry example embodiment, being coupled to multiple mems switches 20 each other illustrating according to Fig. 5
Diagram.In addition, in the embodiment illustrated, two impedance means 84,86 are coupled to the first of each mems switch 20
Contact electrode 32,34 with second.Specifically, described two impedance means 84,86 are inducers.In another embodiment, institute
Stating two impedance means can be resistor.In other embodiments, the quantity of impedance means can be dependent on application and changes.Institute
State impedance means 84,86 to promote the voltage across the first and second contact electrodes 32,34 during the switching manipulation of mems switch
Minimize.
Fig. 7 is the illustrative circuitry illustrating according to an example embodiment, being coupled in series to two mems switches 20 each other
Diagram.In the embodiment illustrated, four impedance means 84,86,88,90 are coupled to the first of each mems switch 20
Contact electrode 32,34 and beam 24 with second.Specifically, described four impedance means 84,86,88,90 are inducers.Another
In individual embodiment, described four impedance means can be resistor.In another embodiment also having, described four impedances dress
Putting can be capacitor.In other embodiments, the quantity of impedance means can be dependent on application and changes.
According to shown embodiment, during closing the plurality of micro-electromechanical switch 20, connect in beam electrode 26 and first
The voltage that touched electrode 32, second contacts between electrode 34 is maintained below 0.5 volt via described impedance means 84,86,88,90
Special.
Fig. 8 is the illustrative circuitry illustrating according to an example embodiment, being coupled in series to two mems switches 20 each other
Diagram.In the embodiment illustrated, four impedance means 84,86,88,90 are coupled to the first of each mems switch 20
Contact electrode 32,34 and beam 24 with second.In addition, two impedance means 92,94 are coupled to the door of each mems switch
Control 58.Further, two other impedance means 96,98 is coupled to the beam 24 of each mems switch 20.Specifically, impedance
Device 92,94,96,98 is resistor.In another embodiment, described additional impedance means can be capacitor.Also
In another embodiment having, described additional impedance means can be inducer.In other embodiments, the number of impedance means
Amount can be dependent on application and changes.According to shown embodiment, Far Left and rightmost line（wire）（Not shown）Quilt
It is coupled to high voltage（For example, 1500 volts）, altofrequency（For example, more than 50 MHz）Source, for example, magnetic resonance coil element.When
During the plurality of switch 20 in high voltage crossing open mode, due to the parasitism of the impedance means of the plurality of mems switch 20
Impedance, and the parasitic capacitance more particularly between the beam 24 and gate 58 of each switch 20, the voltage being applied is by opening
Close 20 to share.
According to embodiments of the invention, during sharing driving voltage between the plurality of micro-electromechanical switch, beam electrode 26
Voltage and gate 58 between is maintained less than 10 volts via impedance means 92,94,96,98.When voltage is in beam electrode and door
When being established between control, the isolation capacity of switch is lowered.Such voltage is due to the parasitic capacitance of switch（From beam electrode to door
Control）And be established.Because the impedance between the plurality of gate of switch starts to affect the performance of switch, therefore is set up
Voltage starts when a series of mems switches are coupled to each other to lose efficacy（break down）.For example, for being coupled to each other
Multiple switch, if the impedance between the gate circuit of central mems switch and leftmost mems switch is less, this is the most left
The gate voltage of the switch on side moves towards the beam voltage of central mems switch, thus causing the reduction in isolation voltage.According to
Embodiments of the invention, when impedance is added between gate, such voltage is mobile to be reduced.The size of the impedance between gate
Being electric capacity between the gate based on each mems switch and beam electrode to be determined.
As discussed previously, the electricity of the possible some times of back-to-back mems switches of voltage generating in magnetic resonance coil
Pressure-volume amount.According to the embodiment of Fig. 5-8, the plurality of mems switch 20 is configured to share applying across the plurality of mems switch 20
Making alive, prevention bridge touched electrode from the excess voltage coupling of the first and second contact electrodes 32,34 to gate 58 and maintenance
32nd, 34 low-voltage（During switching manipulation）.In one embodiment, the plurality of mems switch 20 is configured to equably divide
Enjoy the applied voltage across the plurality of mems switch 20.In a specific embodiment, the plurality of mems switch 20 is configured to
The voltage between the plurality of mems switch is controlled to couple via the plurality of gate 58.The plurality of impedance means promote
Change the impact of the outside stimuluss around the plurality of micro-electromechanical switch 20.
Herein it is to be noted that the life-span of mems switch can be based on being in closure state in mems switch
When, the amount of the residual voltage that bridging touched electrode is generated.Such voltage can be commonly referred to as " thermal switch voltage ".Thermal switch electricity
Pressure can based on the residual voltage from system, and be also based on being given birth to from gate circuit to the coupling energy of contact electrode
Become.This residual voltage on contact electrode is due to gating and contacting the parasitic capacitance between electrode.RF voltage is swashing wherein
Encourage in the application being removed before switch, due to low open mode electric capacity and low leakage current, therefore may have that remnants' is low
Frequency or D/C voltage still across switch keep.According to embodiments of the invention, such effect is passed through to permit in each switch
Permitted telecommunication between contact electrode and beam electrode being mitigated.This telecommunication can be via impedance means（Such as, resistor,
Inducer, capacitor, or the like）To complete.Such telecommunication allows the low frequency component of signal to pass through the switch opened,
The altofrequency simultaneously maintaining requirement blocks.In certain embodiments, single gate is used to encourage the array of the switch 20 of series connection,
This permission to double gate voltage in the case of not increasing for the needs of extra gate.
Although only some features of the present invention are herein shown and described, those skilled in the art
Many modifications and changes will be expected.Therefore, it is understood that, appended claims are intended to cover the real essence falling into the present invention
All such modifications and changes in god.
Claims (19)
1. a kind of system, including：
Be coupled to each other, multiple micro-electromechanical switch including multiple gates, each of which micro-electromechanical switch further includes：
Substrate；
Beam electrode, is arranged on the substrate；
Beam, including be coupled to described beam electrode anchor section, in the first direction from described anchor section extend the first beam portion divide, with
And the second beam portion extending from described anchor section along second direction opposite to the first direction divides；
First coordination electrode contacts electrode with first, described first coordination electrode contact with described first electrode be disposed in described
In substrate, divide towards described first beam portion；And
Second coordination electrode contacts electrode with second, described second coordination electrode contact with described second electrode be disposed in described
In substrate, divide towards described second beam portion；Wherein said first coordination electrode and described second coordination electrode are coupled, to be formed
Gate among the plurality of gate；
Wherein, the plurality of micro-electromechanical switch to be arranged with least one of serial arrangement, arranged in parallel.
2. the system as claimed in claim 1, further includes at least one impedance means, at least one impedance means coupling described
Close each micro-electromechanical switch（i）The plurality of gate,（ii）Described first contact electrode and described first beam portion divide,
（iii）Described second contact electrode and described second beam portion divide,（iv）At least one of described beam.
3. system as claimed in claim 2, at least one impedance means wherein said include the plurality of micro-electromechanical switch
Spurious impedance.
4. the system as claimed in claim 1, each of which micro-electromechanical switch includes micro electronmechanical radio-frequency (RF) switch.
5. the system as claimed in claim 1, each of which micro-electromechanical switch is disposed in and is configured to behaviour in radio-frequency region
In the device made.
6. system as claimed in claim 5, wherein said device includes magnetic resonance imaging system, described magnetic resonance imaging system
Including single mode imaging system or multi-mode imaging system.
7. system as claimed in claim 6, each micro-electromechanical switch wherein said is configured to described nuclear magnetic resonance system
One or more radio frequency reception surface coilss of system, radio frequency transmission surface coils are coupled and are decoupled.
8. a kind of method, including：
Equably driving voltage is applied to be coupled to each other, include multiple gates multiple micro-electromechanical switch, each of which
Individual micro-electromechanical switch further includes：
Substrate；
Beam electrode, is arranged on the substrate；
Beam, including be coupled to described beam electrode anchor section, in the first direction from described anchor section extend the first beam portion divide, with
And the second beam portion extending from described anchor section along second direction opposite to the first direction divides；
First coordination electrode contacts electrode with first, described first coordination electrode contact with described first electrode be disposed in described
In substrate, divide towards described first beam portion；And
Second coordination electrode contacts electrode with second, described second coordination electrode contact with described second electrode be disposed in described
In substrate, divide towards described second beam portion；Wherein said first coordination electrode and described second coordination electrode are coupled, to be formed
Gate among the plurality of gate；
Wherein, the plurality of micro-electromechanical switch to be arranged with least one of serial arrangement, arranged in parallel.
9. method as claimed in claim 8, wherein said multiple micro-electromechanical switch include at least one impedance means, described extremely
Few impedance means are coupled to each micro-electromechanical switch（i）The plurality of gate,（ii）Described first contact electrode and
Described first beam portion divides,（iii）Described second contact electrode and described second beam portion divide,（iv）At least one of described beam.
10. method as claimed in claim 9, further includes at during the closure of the plurality of micro-electromechanical switch via described
Voltage between described beam electrode and described first contact electrode, described second contact electrode is tieed up by least one impedance means
Hold less than 0.5 volt.
11. methods as claimed in claim 9, further include to generate for described many via at least one impedance means described
The spurious impedance of individual micro-electromechanical switch.
12. methods as claimed in claim 9, further include to change via at least one impedance means described the plurality of
The impact of the outside stimuluss around micro-electromechanical switch.
13. methods as claimed in claim 8, further include to share driving voltage across the plurality of micro-electromechanical switch.
14. methods as claimed in claim 13, further include at and share described excitation between the plurality of micro-electromechanical switch
During voltage, via at least one impedance means described, voltage between described beam electrode and described gate is maintained at a below
10 volts.
15. methods as claimed in claim 8, further include to generate the parasitic capacitance between described beam and described gate.
16. methods as claimed in claim 8, further include that equably applying driving voltage establishes by cable to the plurality of microcomputer
Close.
17. methods as claimed in claim 8, further include control from described first and second contact electrodes at least one
Voltage coupling to described gate.
18. methods as claimed in claim 8, further include to control the plurality of microcomputer to establish by cable via the plurality of gate
Voltage coupling between pass.
19. methods as claimed in claim 8, will be across the described first and second contact electricity during further including at switching manipulation
The voltage minimization of pole.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/314344 | 2014-06-25 | ||
| US14/314,344 US9117610B2 (en) | 2011-11-30 | 2014-06-25 | Integrated micro-electromechanical switches and a related method thereof |
| PCT/US2015/037155 WO2015200307A2 (en) | 2014-06-25 | 2015-06-23 | Integrated micro-electromechanical switches and a related method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106415772A true CN106415772A (en) | 2017-02-15 |
| CN106415772B CN106415772B (en) | 2019-08-13 |
Family
ID=54938927
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580034300.4A Active CN106415772B (en) | 2014-06-25 | 2015-06-23 | Integrated micro-electro-mechanical switch and its correlation technique |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3161847B1 (en) |
| JP (1) | JP6781048B2 (en) |
| CN (1) | CN106415772B (en) |
| CA (1) | CA2952661C (en) |
| SG (1) | SG11201610176YA (en) |
| WO (1) | WO2015200307A2 (en) |
Cited By (4)
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| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN107424875A (en) * | 2017-07-24 | 2017-12-01 | 中北大学 | A kind of cross SP3T switch |
| CN107437482A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of practical RF MEMS Switches of board-type |
| CN111064456A (en) * | 2019-12-04 | 2020-04-24 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3815123A1 (en) * | 2018-06-28 | 2021-05-05 | Menlo Microsystems, Inc. | Switch self-actuation mitigation using a tracking signal |
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| US20130134018A1 (en) * | 2011-11-30 | 2013-05-30 | General Electric Company | Micro-electromechanical switch and a related method thereof |
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- 2015-06-23 CN CN201580034300.4A patent/CN106415772B/en active Active
- 2015-06-23 CA CA2952661A patent/CA2952661C/en active Active
- 2015-06-23 JP JP2016574280A patent/JP6781048B2/en active Active
- 2015-06-23 WO PCT/US2015/037155 patent/WO2015200307A2/en active Application Filing
- 2015-06-23 EP EP15810992.6A patent/EP3161847B1/en active Active
- 2015-06-23 SG SG11201610176YA patent/SG11201610176YA/en unknown
Patent Citations (4)
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| US6037719A (en) * | 1998-04-09 | 2000-03-14 | Hughes Electronics Corporation | Matrix-addressed display having micromachined electromechanical switches |
| CN1519877A (en) * | 2002-12-05 | 2004-08-11 | 欧姆龙株式会社 | Contact switch and appts. provided with contact switch |
| US20090159409A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Mems microswitch having a dual actuator and shared gate |
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| CN107393767A (en) * | 2017-07-24 | 2017-11-24 | 中北大学 | A kind of T-shaped double cantilever beam formula single-pole double-throw switch (SPDT) |
| CN107424875A (en) * | 2017-07-24 | 2017-12-01 | 中北大学 | A kind of cross SP3T switch |
| CN107437482A (en) * | 2017-07-24 | 2017-12-05 | 中北大学 | A kind of practical RF MEMS Switches of board-type |
| CN111064456A (en) * | 2019-12-04 | 2020-04-24 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
| CN111064456B (en) * | 2019-12-04 | 2023-08-29 | 维沃移动通信有限公司 | Radio frequency switch and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2952661A1 (en) | 2015-12-30 |
| WO2015200307A3 (en) | 2016-02-25 |
| CN106415772B (en) | 2019-08-13 |
| WO2015200307A2 (en) | 2015-12-30 |
| SG11201610176YA (en) | 2017-01-27 |
| CA2952661C (en) | 2023-01-17 |
| JP2017527949A (en) | 2017-09-21 |
| JP6781048B2 (en) | 2020-11-04 |
| EP3161847A4 (en) | 2018-01-31 |
| EP3161847B1 (en) | 2023-05-31 |
| EP3161847A2 (en) | 2017-05-03 |
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