CN106411267B - A kind of three tunnel Doherty power amplifier of broadband and its implementation - Google Patents

A kind of three tunnel Doherty power amplifier of broadband and its implementation Download PDF

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CN106411267B
CN106411267B CN201610889946.7A CN201610889946A CN106411267B CN 106411267 B CN106411267 B CN 106411267B CN 201610889946 A CN201610889946 A CN 201610889946A CN 106411267 B CN106411267 B CN 106411267B
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power
peak value
circuit
peak
europe
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CN106411267A (en
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程知群
张明
刘国华
董志华
周涛
柯华杰
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Hangzhou Electronic Science and Technology University
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42Modifications of amplifiers to extend the bandwidth
    • H03F1/48Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/486Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits

Abstract

The present invention provides a kind of three tunnel Doherty power amplifier of broadband and its implementation, wherein, three tunnels etc. divide power splitter for being exported respectively after input power is carried out equal part to carrier power amplifying circuit, the first peak value power amplification circuit and the second peak power amplifying circuit, the output of carrier power amplifying circuit terminates 86.6 Europe quarter wavelength impedance transducer T1, and is connected with the output end of the first peak value power amplification circuit and the second peak power amplifying circuit and is combined power output to load.Compared with the existing technology, the load modulation network that the present invention passes through the traditional three tunnel Doherty power amplifiers of improvement, it reduces the impedance transformation ratio of load modulation network and reduces the size of Doherty power amplifier, the compensating line of peak value branch is added in peak value output matching circuit simultaneously, the quality factor for reducing overall peaks output matching circuit, have greatly widened the bandwidth of operation of three tunnel Doherty power amplifiers.

Description

A kind of three tunnel Doherty power amplifier of broadband and its implementation
Technical field
The present invention relates to radio-frequency communication technical field more particularly to a kind of three tunnel Doherty power amplifier of broadband and its Implementation method.
Background technique
It is mechanical, electrical to be widely used in WLAN, hand for nearly half a century, the development that frequency microwave technology is advanced by leaps and bounds The wireless communication fields such as sub- confrontation, satellite communication.RF power amplification unit is the core component in wireless communication system, in order to realize Signal transmits at a distance, ensures signal reliable reception, must be put using power amplifier in wireless communication system transmitting-receiving subassembly Big signal.It may be said that the performance quality of power amplifier will directly influence the working condition of whole system, it is wireless receiving and dispatching system The core component of radio-frequency front-end in system.
With the rapid development of wireless communication technique, frequency microwave technology is more and more important in people's daily life. In order to transmit data volume as big as possible in limited spectral bandwidth, communication quotient generallys use extremely complex modulation system, And this peak-to-average force ratio (PAPR) that will lead to signal becomes larger, and traditional power amplifier such as A class, AB class is used to believe non-permanent envelope It is very low number to amplify efficiency, especially when high-power rollback.The radio-frequency power for taking into account high efficiency and high linearity is put Big device becomes one of academia and the research hotspot of industry.Doherty power amplifier is because of energy high efficiency amplifier modulated signal And cost is relatively low and becomes the current dominant form for wirelessly communicating used power amplifier.One typical two-way Doherty Power amplifier includes major-minor two power amplifiers, and signal is divided into two defeated respectively by major-minor power amplifier input terminal by power splitter Enter, signal is combined by a load modulation network and is exported by output end, according to the major-minor function of size dynamic modulation of input signal The payload impedance of rate amplifier, so that Doherty power amplifier be made still to have in the case where output power significantly retracts Very high efficiency.
But with the fast development of the communication technology, modulation system is also all the more complicated, traditional two-way Doherty power amplification The range of device back-off 6dB is no longer satisfied the requirement of current wireless communication system, therefore, three road Doherty power amplifiers with Generation.Three road Doherty technologies can improve the efficiency of power amplifier in the case where higher power retracts, and increase high efficiency power The range of rollback.
However, there is also common fault-bands of traditional Doherty power amplifier for three tunnel in the prior art Doherty power amplifier The relatively narrow problem of width.The load modulation network of three tunnel Doherty power amplifiers is still logical using the prior art in the prior art With 50 ohm of quarter wavelength impedance transducer, this causes its impedance transformation ratio larger, therefore, significantly limits band It is wide.Meanwhile the size of prior art Doherty power amplifier is larger, limits its scope of application to a certain extent.
In face of the worsening shortages of frequency spectrum resource, multiple working frequency range can be covered simultaneously and are compatible with the wireless of various protocols standard Wide-band communication system has become the development priority of wireless technology.Therefore, be badly in need of develop broadband Doherty power amplifier with Meet the requirement of current and future wireless communication system high-transmission digit rate.Broadband Doherty power amplifier is also natural to be become The hot spot of academia and industry research.
Therefore for drawbacks described above present in currently available technology, it is really necessary to be studied, to provide a kind of scheme, Solve defect existing in the prior art.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of three tunnel Doherty power amplifier of broadband and its realization sides Method reduces the impedance transformation of load modulation network by improving the load modulation network of traditional three tunnel Doherty power amplifiers Than, while the compensating line of peak value branch being added in peak value output matching circuit, reduce overall peaks output matching circuit Quality factor greatly widen the bandwidth of operation of three tunnel Doherty power amplifiers.
In order to overcome the drawbacks of the prior art, the invention adopts the following technical scheme:
A kind of broadband three tunnel Doherty power amplifier, including three tunnels etc. divide power splitter, carrier power amplifying circuit, One peak power amplifying circuit, the second peak power amplifying circuit and load modulation network, wherein power splitter is divided on described three tunnel etc. For being exported respectively after input power is carried out trisection to the carrier power amplifying circuit, the first peak value power amplification circuit With the second peak power amplifying circuit, the carrier power amplifying circuit, the first peak value power amplification circuit and the second peak work The output power of rate amplifying circuit is exported after the load modulation network to load;
The impedance of the load is 50 ohm;The load modulation network is become using the quarter-wave impedance in 86.6 Europe Parallel operation T1;The output end of the carrier power amplifying circuit is connected with one end of the impedance transformer T1, and the impedance becomes The other end of parallel operation T1 is connected with the output end of the first peak value power amplification circuit and the second peak power amplifying circuit, And be connected jointly with one end of the load, the other end ground connection of the load;
The carrier power amplifying circuit includes carrier wave input matching circuit, Carrier Power Amplifier and the load being sequentially connected in series Wave output matching circuit debugs what the carrier wave output matching circuit made the carrier power amplifying circuit in low input power Load impedance is 150 Europe and the load impedance in high input power is 50 Europe;The first peak value power amplification circuit includes It is sequentially connected in series the first peak value input matching circuit, the first peak value power amplifier and the first peak value output matching circuit, debugs institute Stating the first peak value output matching circuit makes load impedance 150 of the first peak value power amplification circuit in high input power Europe, while the first compensating line of integrated setting C1 puts first peak power in the first peak value output matching circuit Big load impedance of the circuit in low input power is infinity;The second peak power amplifying circuit includes being sequentially connected in series the Two peak value input matching circuits, the second peak power amplifier and the second peak value output matching circuit debug second peak value Output matching circuit makes load impedance 150 Europe of the second peak power amplifying circuit in high input power, while The second compensating line of integrated setting C2 makes the second peak power amplifying circuit exist in the second peak value output matching circuit Load impedance when low input power is infinity.
Preferably, the first compensating line C1 is 150 Europe.
Preferably, the second compensating line C2 is 150 Europe.
Preferably, the front end of the first peak value input matching circuit is additionally provided with the quarter-wave phase delay in 50 Europe Line.
Preferably, the front end of the second peak value input matching circuit is additionally provided with the quarter-wave phase delay in 50 Europe Line.
Preferably, the Carrier Power Amplifier is AB power-like amplifier, the first peak value power amplifier and institute Stating the second peak power amplifier is C power-like amplifier.
Preferably, the Carrier Power Amplifier, the first peak value power amplifier and second peak power are put Big device is all made of transistor realization.
In order to overcome the drawbacks of the prior art, the invention also discloses a kind of three tunnel Doherty power amplifiers of broadband Implementation method is achieved by the steps of:
The AB power-like amplifier for debugging a standard as Carrier Power Amplifier, and debugs carrier wave output matching electricity Road makes load impedance 150 Europe of the carrier power amplifying circuit in low input power and the load impedance in high input power For 50 Europe;
The C power-like amplifier for debugging a standard as the first peak value power amplifier, and debugs the output of the first peak value Match circuit makes load impedance 150 Europe of the first peak value power amplification circuit in high input power;
The C power-like amplifier for debugging a standard as the second peak power amplifier, and debugs the output of the second peak value Match circuit makes load impedance 150 Europe of the second peak power amplifying circuit in high input power;
First compensating line C1 and the output matching of the first peak value of integrated debugging are set in the first peak value output matching circuit Circuit and the first compensating line C1 keep load impedance of the first peak value power amplification circuit in low input power infinitely great;? Second compensating line C2 is set in two peak value output matching circuits and integrated debugging the second peak value output matching circuit and second is mended It is infinitely great to repay the load impedance that line C2 makes the second peak power amplifying circuit in low input power;
A load modulation network is debugged, the load modulation network uses the quarter-wave impedance transformer in 86.6 Europe T1;
Divide power splitter by the carrier power amplifying circuit debugged, the first peak value power amplification circuit, using three tunnels etc. Two peak power amplifying circuits and load modulation network combine, and constitute three tunnel Doherty power amplifier of broadband, wherein The output end of carrier power amplifying circuit is connected with one end of the impedance transformer T1, and the impedance transformer T1's is another End be connected with the output end of the first peak value power amplification circuit and the second peak power amplifying circuit, and jointly with it is described One end of load is connected, the other end ground connection of the load.
Preferably, the first compensating line C1 and the second compensating line C2 is 150 Europe.
Preferably, 50 Ou Si are equipped in the front end of the first peak value input matching circuit and the second peak value input matching circuit The delay line phase of/mono- wavelength.
Compared with the prior art, present invention improves over the load modulation network of traditional three tunnel Doherty power amplifiers, tradition The impedance transformation ratio of three tunnel Doherty power amplifier load modulation networks is 9:1 (150 Europe to 16.67 Europe), is born in the present invention The impedance transformation ratio for carrying modulating network is 3:1 (150 Europe to 50 Europe), reduces the impedance transformation ratio of load modulation network, meanwhile, The present invention is not necessarily in combining output end one section of quarter-wave transmission line of series connection, and therefore, the present invention is increasing Doherty work The chip area of whole Doherty is reduced while bandwidth.Meanwhile the compensation of traditional three road Doherty power amplifier auxiliary branch Line is defined with single center frequency points, and the quality factor of output matching circuit are increased, so that three road Doherty's of inhibition is whole Compensating line is added in peak value output matching circuit by body bandwidth, the present invention, reduces the Q value of peak value output matching circuit, increases three The bandwidth of operation of road Doherty power amplifier.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of three tunnel Doherty power amplifier of broadband in the present invention.
Fig. 2 is that characteristic impedance is ZTQuarter-wave transmission line impedance transformation characteristic.
Fig. 3 is the working principle diagram of three tunnel Doherty power amplifier of middle width strip of the present invention.
Fig. 4 a is the main amplification of traditional three road Doherty schemes and three road Doherty scheme Imitating of middle width strip of the present invention Device at saturation point (high-power) load impedance reality imaginary part with frequency variation relation.
Fig. 4 b is the main amplification of traditional three road Doherty schemes and three road Doherty scheme Imitating of middle width strip of the present invention Device at rollback point (small-power) load impedance reality imaginary part with frequency variation relation.
Specific embodiment
Following is a specific embodiment of the present invention in conjunction with the accompanying drawings, technical scheme of the present invention will be further described, However, the present invention is not limited to these examples.
In view of the defects existing in the prior art, structure of the applicant to three tunnel Doherty power amplifiers in the prior art It conducts in-depth research, it is found by the applicant that the load modulation of three tunnel Doherty power amplifier carrier power amplifiers in the prior art Quarter wavelength impedance transducer impedance transformation ratio in network is larger, makes traditional three tunnel Doherty power amplifiers load The impedance transformation ratio of modulating network is 9:1 (150 Europe to 16.67 Europe), to inhibit the bandwidth of operation of three road Doherty, together When the prior art load modulation network be usually made of multiple impedance transformers, increase the ruler of Doherty power amplifier It is very little, and the compensating line of traditional three road Doherty power amplifier auxiliary branch is defined with single center frequency points, will increase output Quality factor with circuit, to inhibit the overall bandwidth of three road Doherty.
Applicant passes through theory analysis discovery, the approximate expression of quatrter-wavelength line bandwidth of operation are as follows:
Wherein Δ f/f0Indicate the relative bandwidth of quarter-wave impedance transformation line;ΓmIt is for maximum receptible reflection Number;Z0And ZLIndicate the impedance value of two ports;In order to increase Δ f/f0Value, can pass through reduce Z0And ZLRatio.
Referring to fig. 2, showing characteristic impedance is ZTQuarter-wave transmission line impedance transformation characteristic.According to fig. 2 It is Z that characteristic impedance, which can be obtained,TThe input impedance of quarter-wave transmission line be
Impedance transformation ratio is defined as the impedanoe ratio of quarter-wave transmission line input and output two-port, i.e. impedance converts Than
By the bandwidth of operation expression formula of quarter-wave transmission line it is found that working as Z0And ZLImpedance value closer to when, i.e., four The impedance transformation ratio of/mono- wavelength transmission line is smaller, and bandwidth of operation is wider.Therefore, in order to increase Δ f/f0Value, can lead to Cross reduction Z0And ZLRatio, that is, reduce quarter-wave transmission line impedance transformation ratio k.
In order to overcome the drawbacks of the prior art, the application show this hair referring to Fig. 1 using a kind of load modulation network Bright a kind of broadband three tunnel Doherty power amplifier, including three tunnels etc. divide power splitter, carrier power amplifying circuit, the first peak value Power amplification circuit, the second peak power amplifying circuit and load modulation network, wherein three tunnels etc. divide power splitter for that will input Power is exported respectively after carrying out equal part to carrier power amplifying circuit and the first peak value power amplification circuit and the second peak power Amplifying circuit, the output of carrier power amplifying circuit terminate 86.6 Europe quarter wavelength impedance transducer T1, and and first peak The output end of value power amplification circuit and the second peak power amplifying circuit, which is connected, to be combined power output to load;
Carrier power amplifying circuit includes that the carrier wave input matching circuit, Carrier Power Amplifier and the carrier wave that are sequentially connected in series are defeated Match circuit out, debugging carrier wave output matching circuit make load impedance of the carrier power amplifying circuit in low input power 150 Europe and load impedance in high input power are 50 Europe;First peak value power amplification circuit includes being sequentially connected in series first peak It is worth input matching circuit, the first peak value power amplifier and the first peak value output matching circuit, debugging the first peak value output matching Circuit makes load impedance 150 Europe of the first peak value power amplification circuit in high input power, while exporting in the first peak value The first compensating line of integrated setting C1 makes load resistance of the first peak value power amplification circuit in low input power in match circuit Resist for infinity;Second peak power amplifying circuit includes being sequentially connected in series the second peak value input matching circuit, the second peak power Amplifier and the second peak value output matching circuit, the second peak value output matching circuit of debugging make the second peak power amplifying circuit exist Load impedance when high input power is 150 Europe, while integrated setting second compensates in the second peak value output matching circuit Line C2 keeps load impedance of the second peak power amplifying circuit in low input power infinitely great.Load modulation network is by one section 86.6 Europe quarter wavelength impedance transducer TI composition;Carrier wave amplifying circuit passes through the impedance transformer TI and first in 86.6 Europe Peak power amplifying circuit and the second peak power amplifying circuit, which are connected, to be combined power output to load.
By adopting the above technical scheme, load modulation network is only by one section of 86.6 Europe quarter wavelength impedance transducer TI structure At reducing the impedance transformation ratio of load modulation network and greatly reduce the size of Doherty power amplifier;Simultaneously by peak The compensating line of value power amplifier output end is added in peak value output matching circuit, so that it is auxiliary to overcome traditional three road Doherty power amplifiers The compensating line for helping branch is the technological deficiency defined with single center frequency points, greatly reduces the quality of peak value output matching circuit Factor, to greatly widen the bandwidth of operation of three road Doerty.
In a preferred embodiment, the first compensating line C1 and the second compensating line C2 is 150 Europe, and compensating line, which is added, is In order to make the load impedance nothing of the first peak value output matching circuit and the second peak power amplifying circuit in low input power Poor big, simultaneously because high input power is to be matched to 150 Europe, the compensating line using 150 Europe is exactly high defeated in order to further increase Enter performance when power.
The design principle of above-mentioned technical proposal is described in detail further below.Referring to Fig. 3, it show three tunnel of middle width strip of the present invention The working principle diagram of Doherty power amplifier.Load ZLOn voltage can indicate are as follows:
VL=ZL(IC'+IP)
IP=IP1+IP2
The output impedance of major-minor (two auxiliary branch are classified as a branch) two branches can indicate respectively are as follows:
The voltage-current relationship at carrier power amplifier output end quarter-wave impedance transformation line both ends are as follows:
VP·IC'=VC·IC
Wherein,
VP=VP1=VP2
Then,
In addition, can be obtained by quarter-wave impedance transformation line principle:
According to VC=IC·ZC, have,
Wherein ZT=86.6 Ω, ZL=50 Ω.
When low input power state, only carrier power amplifier is opened, and all input signals are amplified through carrier power amplifier, two-way peak Value power amplifier completely closes (IP1=IP2=0), then carrier power amplifier and peak work are lowerd the output impedance under power and can be indicated are as follows:
ZP1,Low=ZP2,Low=∞
The impedance being then combined under low power state a little is 50 ohm.
When high input power state, major-minor power amplifier works together, and when input power reaches maximum, major-minor power amplifier is simultaneously Saturation, entirety Doherty power amplifier output power is maximum at this time, and two-way peak value power amplifier output end is matched to 150 ohm at this time, Even ZP1,High=ZP2,HighMain power amplifier output end is matched to 50 ohm in saturation state, then by 86.6 Ou Si by=150 Ω / mono- wavelength impedance transformation line convert quarter-wave transformation line obtains 150 ohm, three 150 ohm in parallel must to be combined a little Impedance is 50 ohm, i.e., it is 50 ohm that point impedance is combined under low-power and high power state.Again because Doherty is integrally combined Output end load impedance is 50 ohm, it is therefore not necessary in combining output end one section of quarter-wave transmission line of series connection, therefore, The present invention reduces the chip area of whole Doherty while increasing Doherty bandwidth of operation.
In a preferred embodiment, the front end of the first peak value input matching circuit is additionally provided with 50 Europe a quarters The delay line phase of wavelength.
In a preferred embodiment, the front end of the second peak value input matching circuit is additionally provided with 50 Europe a quarters The delay line phase of wavelength.
In a preferred embodiment, the Carrier Power Amplifier is AB power-like amplifier, first peak value Power amplifier and the second peak power amplifier are C power-like amplifier.
In a preferred embodiment, the Carrier Power Amplifier, the first peak value power amplifier and described Second peak power amplifier is all made of transistor realization.
In order to overcome the drawbacks of the prior art, the present invention also proposes a kind of reality of three tunnel Doherty power amplifier of broadband Existing method, is achieved by the steps of:
Step 1: the AB power-like amplifier of one standard of debugging as Carrier Power Amplifier, and debugs carrier wave output Match circuit makes load impedance 150 Europe of the carrier power amplifying circuit in low input power and bearing in high input power Load impedance is 50 Europe;
Step 2: the C power-like amplifier of one standard of debugging as the first peak value power amplifier, and debugs first Peak value output matching circuit makes load impedance 150 Europe of the first peak value power amplification circuit in high input power;
Step 3: the C power-like amplifier of one standard of debugging as the second peak power amplifier, and debugs second Peak value output matching circuit makes load impedance 150 Europe of the second peak power amplifying circuit in high input power;
Step 4: being arranged the first compensating line C1 in the first peak value output matching circuit and the first peak value of integrated debugging is defeated Match circuit and the first compensating line C1 keep load impedance of the first peak value power amplification circuit in low input power infinite out Greatly;Be arranged in the second peak value output matching circuit the second compensating line C2 and integrated debugging the second peak value output matching circuit and Second compensating line C2 keeps load impedance of the second peak power amplifying circuit in low input power infinitely great;The prior art is logical It is often on the basis of not changing match circuit, to redesign this root compensating line after output matching circuit designs;The prior art Compensating line design method cause compensating line to be to define with single center frequency points, increasing compensating line will increase output matching electricity The quality factor on road, to inhibit the overall bandwidth of three road Doherty.The present invention is integrated by output matching circuit and compensating line Setting and debugging, compensating line is added in peak value output matching circuit and makees peak value output matching circuit, to reduce peak value output The Q value of match circuit has greatly widened the bandwidth of operation of three road Doherty power amplifiers;
Step 5: one load modulation network of debugging, the load modulation network use the quarter-wave resistance in 86.6 Europe Resistance parallel operation T1;
Step 6: divide power splitter by the carrier power amplifying circuit debugged, the first peak value power amplification using three tunnels etc. Circuit, the second peak power amplifying circuit and load modulation network combine, and constitute three road Doherty power amplification of broadband Device, wherein the output end of carrier power amplifying circuit is connected with one end of the impedance transformer T1, the impedance transformer The other end of T1 is connected with the output end of the first peak value power amplification circuit and the second peak power amplifying circuit, and altogether It is connected with one end of the load, the other end ground connection of the load.
A and Fig. 4 b referring to fig. 4 show traditional three road Doherty schemes and three road Doherty scheme of middle width strip of the present invention The main amplifier of Imitating at saturation point (high-power) and rollback point (small-power) load impedance reality imaginary part with frequency variation Relationship, from the diagram of Fig. 4 a and Fig. 4 b it is found that the present invention has greatly widened the bandwidth of operation of three road Doherty power amplifiers.
The above description of the embodiment is only used to help understand the method for the present invention and its core ideas.It should be pointed out that pair For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out Some improvements and modifications, these improvements and modifications also fall within the scope of protection of the claims of the present invention.To these embodiments A variety of modifications are it will be apparent that General Principle defined herein can be for those skilled in the art It is realized in other embodiments in the case where not departing from the spirit or scope of the present invention.Therefore, the present invention is not intended to be limited to These embodiments shown in the application, and be to fit to consistent with principle disclosed in the present application and features of novelty widest Range.

Claims (10)

1. a kind of three tunnel Doherty power amplifier of broadband, which is characterized in that divide power splitter, carrier power to put including three tunnels etc. Big circuit, the first peak value power amplification circuit, the second peak power amplifying circuit and load modulation network, wherein three tunnel Equal part power splitter is used to after input power is carried out trisection exported respectively to the carrier power amplifying circuit, the first peak work Rate amplifying circuit and the second peak power amplifying circuit, the carrier power amplifying circuit, the first peak value power amplification circuit and The output power of second peak power amplifying circuit is exported after the load modulation network to load;
The impedance of the load is 50 ohm;The load modulation network uses the quarter-wave impedance transformer in 86.6 Europe T1;The output end of the carrier power amplifying circuit is connected with one end of the impedance transformer T1, the impedance transformer The other end of T1 is connected with the output end of the first peak value power amplification circuit and the second peak power amplifying circuit, and altogether It is connected with one end of the load, the other end ground connection of the load;
The carrier power amplifying circuit includes that the carrier wave input matching circuit, Carrier Power Amplifier and the carrier wave that are sequentially connected in series are defeated Match circuit out, debugging the carrier wave output matching circuit makes load of the carrier power amplifying circuit in low input power Impedance is 150 Europe and the load impedance in high input power is 50 Europe;The first peak value power amplification circuit includes successively It concatenates the first peak value input matching circuit, the first peak value power amplifier and the first peak value output matching circuit, debugs described the One peak value output matching circuit makes load impedance 150 Europe of the first peak value power amplification circuit in high input power, The first compensating line of integrated setting C1 makes the first peak value power amplification in the first peak value output matching circuit simultaneously Load impedance of the circuit in low input power is infinity;The second peak power amplifying circuit includes being sequentially connected in series second It is defeated to debug second peak value for peak value input matching circuit, the second peak power amplifier and the second peak value output matching circuit Match circuit makes load impedance 150 Europe of the second peak power amplifying circuit in high input power out, while in institute Stating the second compensating line of integrated setting C2 in the second peak value output matching circuit makes the second peak power amplifying circuit low Load impedance when input power is infinity.
2. three tunnel Doherty power amplifier of broadband according to claim 1, which is characterized in that first compensating line C1 is 150 Europe.
3. three tunnel Doherty power amplifier of broadband according to claim 1, which is characterized in that second compensating line C2 is 150 Europe.
4. three tunnel Doherty power amplifier of broadband according to claim 1, which is characterized in that first peak value is defeated The front end for entering match circuit is additionally provided with the quarter-wave delay line phase in 50 Europe.
5. three tunnel Doherty power amplifier of broadband according to claim 1, which is characterized in that second peak value is defeated The front end for entering match circuit is additionally provided with the quarter-wave delay line phase in 50 Europe.
6. three tunnel Doherty power amplifier of broadband according to claim 1, which is characterized in that the carrier power is put Big device is AB power-like amplifier, and the first peak value power amplifier and the second peak power amplifier are C class power Amplifier.
7. three tunnel Doherty power amplifier of broadband according to claim 6, which is characterized in that the carrier power is put Big device, the first peak value power amplifier and the second peak power amplifier are all made of transistor realization.
8. a kind of implementation method of three tunnel Doherty power amplifier of broadband, which is characterized in that be achieved by the steps of:
The AB power-like amplifier for debugging a standard as Carrier Power Amplifier, and is debugged carrier wave output matching circuit and is made Load impedance of the carrier power amplifying circuit in low input power is 150 Europe and the load impedance in high input power is 50 Europe;
The C power-like amplifier for debugging a standard as the first peak value power amplifier, and debugs the output matching of the first peak value Circuit makes load impedance 150 Europe of the first peak value power amplification circuit in high input power;
The C power-like amplifier for debugging a standard as the second peak power amplifier, and debugs the output matching of the second peak value Circuit makes load impedance 150 Europe of the second peak power amplifying circuit in high input power;
First compensating line C1 and integrated debugging the first peak value output matching circuit are set in the first peak value output matching circuit Keep load impedance of the first peak value power amplification circuit in low input power infinitely great with the first compensating line C1;At the second peak Second compensating line C2 and integrated debugging the second peak value output matching circuit and the second compensating line are set in value output matching circuit C2 keeps load impedance of the second peak power amplifying circuit in low input power infinitely great;
A load modulation network is debugged, the load modulation network uses the quarter-wave impedance transformer T1 in 86.6 Europe;
Divide power splitter by the carrier power amplifying circuit debugged, the first peak value power amplification circuit, the second peak using three tunnels etc. Value power amplification circuit and load modulation network combine, and constitute three tunnel Doherty power amplifier of broadband, wherein carrier wave The output end of power amplification circuit is connected with one end of the impedance transformer T1, the other end of the impedance transformer T1 with The output end of the first peak value power amplification circuit and the second peak power amplifying circuit is connected, and jointly with the load One end be connected, the other end of load ground connection.
9. the implementation method of three tunnel Doherty power amplifier of broadband according to claim 8, which is characterized in that described First compensating line C1 and the second compensating line C2 is 150 Europe.
10. the implementation method of three tunnel Doherty power amplifier of broadband according to claim 8, which is characterized in that The front end of one peak value input matching circuit and the second peak value input matching circuit is equipped with the quarter-wave phase in 50 Europe and prolongs Slow line.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107453714A (en) * 2017-06-15 2017-12-08 江苏大学 A kind of Doherty power amplifier based on the matching of double states and double state matching process
CN107332519A (en) * 2017-07-07 2017-11-07 杭州电子科技大学 A kind of broadband Doherty power amplifier and its implementation that combiner is exported based on modified
CN107508559A (en) * 2017-08-07 2017-12-22 电子科技大学 A kind of road Doherty power amplifier devices of new digital dual input three
CN107547051B (en) * 2017-08-28 2020-10-23 广东顺德中山大学卡内基梅隆大学国际联合研究院 Doherty power amplifier based on distributed broadband impedance transformation structure
CN109274343A (en) * 2018-11-09 2019-01-25 华南理工大学 A kind of power amplifier stackable with energy
CN109660212B (en) * 2018-11-27 2023-07-18 江苏大学 3-path Doherty power amplifier adopting reactance compensation to expand bandwidth
CN109660214A (en) * 2018-12-20 2019-04-19 佛山臻智微芯科技有限公司 One kind being applied to the 5th third-generation mobile communication base station Doherty power amplifier
CN112448677A (en) * 2019-08-30 2021-03-05 天津大学青岛海洋技术研究院 Doherty power amplifier structure with large bandwidth and compact structure
CN111740703B (en) * 2020-05-25 2024-04-05 杭州电子科技大学 pseudo-Doherty self-input-control load modulation balance type power amplifier and implementation method thereof
CN112543002B (en) * 2020-12-23 2023-10-27 杭州电子科技大学 Broadband differential Doherty power amplifier and design method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101534093A (en) * 2009-04-14 2009-09-16 武汉正维电子技术有限公司 Final three-route power synthesizing amplifying circuit applied to power amplifier of mobile communication base station system
CN102832886A (en) * 2011-06-17 2012-12-19 英飞凌科技股份有限公司 Wideband doherty amplifier circuit having constant impedance combiner
CN104167995A (en) * 2013-05-15 2014-11-26 香港城市大学 Power amplifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8400216B2 (en) * 2010-11-05 2013-03-19 Postech Academy-Industry Foundation 3-way Doherty power amplifier using driving amplifier
US9503028B2 (en) * 2015-01-30 2016-11-22 Mitsubishi Electric Research Laboratories, Inc. Three-way sequential power amplifier system for wideband RF signal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101534093A (en) * 2009-04-14 2009-09-16 武汉正维电子技术有限公司 Final three-route power synthesizing amplifying circuit applied to power amplifier of mobile communication base station system
CN102832886A (en) * 2011-06-17 2012-12-19 英飞凌科技股份有限公司 Wideband doherty amplifier circuit having constant impedance combiner
CN104167995A (en) * 2013-05-15 2014-11-26 香港城市大学 Power amplifier

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