CN106410604A - Butterfly packaged SG-DBR (Sampled Grating Distributed Bragg Reflector) tunable semiconductor laser module control method - Google Patents
Butterfly packaged SG-DBR (Sampled Grating Distributed Bragg Reflector) tunable semiconductor laser module control method Download PDFInfo
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- CN106410604A CN106410604A CN201610920193.1A CN201610920193A CN106410604A CN 106410604 A CN106410604 A CN 106410604A CN 201610920193 A CN201610920193 A CN 201610920193A CN 106410604 A CN106410604 A CN 106410604A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- Condensed Matter Physics & Semiconductors (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a butterfly packaged SG-DBR (Sampled Grating Distributed Bragg Reflector) tunable semiconductor laser module control method, which is characterized in that a DSP chip adjusts an integrated constant current source driving chip in a single-chip integrated voltage-controlled constant current source driving circuit through an SPI bus, and is used for changing current output so as to control wavelength output of a light source module; a high-precision TEC circuit is used for controlling the temperature of an operating environment of a laser to remain constant at a set value; the DSP chip outputs a voltage value to a corresponding pin of a temperature control chip by the means of a DA function so as to set the temperature value or corresponding resistance in a circuit at the periphery of the temperature control chip is changed directly so as to set the temperature value; and an optical wavelength locking circuit acquires two paths of current outputted by the light source module, converts the current into voltage, converts the voltage into digital signals through an AD module, sends the digital signals to the DSP chip or directly inputs the digital signals to the AD module arranged in the DSP chip so as to perform acquisition, and is used for feeding back and controlling the output of the compensation constant current source and ensuring the wavelength and the power output of a laser module to be stable.
Description
Technical field
One kind according to the present invention is for aerospace based on tunable laser in optical fiber grating sensing testing system
The control of module, is mainly based upon a kind of SG-DBR of butterfly encapsulation
(SampledGratingDistributedBraggReflector) control method of tunable laser.
Background technology
Semiconductor laser is most important light source in current optical communication system and Fibre Optical Sensor, has small volume, weight
Amount is light, high conversion efficiency, the features such as power saving, is easy to that to realize monolithic photoelectron integrated with other devices.And within the specific limits may be used
With the continuous semiconductor laser with tunable changing laser output wavelength, due to its characteristic property by each company of the world with grind
Study carefully mechanism to be paid attention to, this field also constantly achieves new progress.Particularly in dense wavelength division multiplexing system and all-optical network
Middle as crucial opto-electronic device, according to the market demand, the tunable laser compact conformation of butterfly encapsulation, stable.Behaviour
Make convenient, perfect performance, cost reduces, the output of the many power of achievable multi-wavelength.So the tunable of butterfly packing forms swashs
The application of light device is more and more extensive.
The tuning of external semiconductor laser with tunable is realized principle and be can be divided mainly into three kinds at present：Electric current tuning, temperature
Tuning and mechanical tuning, and selected semiconductor laser light source is also determined by tuning manner.
Electric current tuning is the tuning realizing wavelength by changing injection current, and its tuned speed is ns rank, mainly should
For SG-DBR (sampling grating DBR) and GCSR (auxiliary grating directional couple dorsad samples reflection) laser instrument.Its General Principle
It is by changing the fiber grating of diverse location and the electric current of phase control part in tunable laser, making the phase of fiber grating
Refractive index changes, and produces different spectrum.The superposition of the different spectrum being produced by zones of different fiber grating is carried out
The selection of specific wavelength, thus produce the laser of the specific wavelength of needs.Injection electricity by Bragg grating area before and after changing
Stream changes therewith changing echo area material effective refractive index, bragg wavelength, completes the coarse adjustment of wavelength.Then adjust phase region
Electric current make chamber mould unanimously realize fine tuning with the reflection peak of echo area.
But this type tunable laser has mode hopping problem, in order to eliminate the impact of pilot process transient mode, lead to
Often in one SOA (semiconductor optical amplifier) of front end single-chip integration of the front grating section of DBR type semiconductor laser with tunable,
During wavelength switching, SOA cuts off the output of laser instrument as a photoswitch, thus reaching shielding transient state excitation mode
Effect.
Content of the invention
The present invention is in order to solve the above problems, there is provided a kind of butterfly encapsulates SG-DBR continuously adjustable semiconductor laser
Control method it is characterised in that：Including single-chip integration voltage controlled current source drive circuit, optical wavelength lock circuit, the control of high accuracy TEC
Circuit processed, dsp chip and light source module it is characterised in that：Described dsp chip adjusts described single-chip integration by spi bus
Integrated constant-current source drive chip in voltage controlled current source drive circuit, exports to control described light source module for changing electric current
Wavelength exports；Described high accuracy TEC circuit is for controlling the operating ambient temperature of laser instrument constant in setting value；It is by described
Dsp chip arranges temperature value by the respective pin of DA fuction output magnitude of voltage to temperature control chip or directly changes temperature
Corresponding resistor in the circuit of control chip periphery is arranging；Described optical wavelength lock circuit gathers the two-way of light source module output
Current value, and be converted to voltage, digital signal is converted to by A/D module and delivers to dsp chip or be directly inputted into described DSP core
The built-in A/D module of piece is acquired, and the output for feedback control compensation constant-current source is it is ensured that laser module wavelength and power
Export stablizes.
Preferably, described control circuit also includes optical modulator circuit and PD testing circuit, and described optical modulator circuit will be outer
The optical signal input in portion, the A/D module that the voltage signal after described PD testing circuit is changed delivers to dsp chip is acquired.
Preferably, the wavelength information that described dsp chip gathers to described optical wavelength lock circuit is corrected, resolves correlation
Process and to compensate tuning current operation and fast demodulation is carried out to the external environment condition data receiving.
Preferably, described dsp chip interface also includes SDRAM chip.
Preferably, the temperature stability of all temperature control chips that described high accuracy TEC control circuit controls be ±
Less than 0.003 DEG C.
Preferably, described dsp chip interface also includes FLASH chip, and described FLASH chip is used for storing " wavelength-electricity
Stream " look-up table.
Preferably, described dsp chip interface also includes SDRAM, serial communication circuit, and described serial communication circuit is
RS232 or RS485 interface circuit forms, and is used for testing tunable semiconductor for sending electric current tuning order by host computer
" wavelength-electric current " look-up table of laser instrument, can upload the demodulation result that dsp chip exports in host computer simultaneously.
Preferably, described feedback signal includes reference signal and standard signal.
Preferably, integrated constant-current source drive chip includes five road electric current output areas, respectively semiconductor optical amplifier electric current
Output area, gain region electric current output area, phase-section current output area, front grating and rear light gate current output area, wherein above-mentioned
The current value range of each area adjustment is different.
Preferably, described wave length shift is subject to temperature drift effects, and described high accuracy TEC control circuit controls light source module
Wavelength drift scope is 5pm.
It should be appreciated that aforementioned description substantially and subsequently detailed description are exemplary illustration and explanation, should not
As the restriction to the claimed content of the present invention.
Brief description
With reference to the accompanying drawing enclosed, the more purpose of the present invention, function and advantage will be as follows by embodiment of the present invention
Description is illustrated, wherein：
Fig. 1 schematically shows and is controlled according to the butterfly encapsulation SG-DBR continuously adjustable semiconductor laser module of the present invention
Schematic diagram.
Specific embodiment
By reference to one exemplary embodiment, the purpose of the present invention and function and the side for realizing these purposes and function
Method will be illustrated.However, the present invention is not limited to one exemplary embodiment disclosed below；Can by multi-form Lai
It is realized.The essence of description is only to aid in the detail of the various equivalent modifications Integrated Understanding present invention.
Hereinafter, embodiments of the invention will be described with reference to the drawings.In the accompanying drawings, identical reference represent identical
Or similar part.
The control method of the present invention be dsp chip by spi bus function adjust single-chip integration voltage controlled current source chip Lai
Change 5 road electric currents and export to control the wavelength of laser instrument to export, simultaneously under high accuracy TEC temperature control it is ensured that laser instrument by
It is minimal within 5 pm in temperature drift effects wave length shift, constant-current source and temperature control all can control wavelength in a timing
Interior is relatively stable, but after long-play, wavelength can change with temperature characteristics, leads to wavelengths centered frequency
Shift, light source module is internally integrated sensing and the compensation to this side-play amount of optical wavelength side-play amount, so light source module
Reference signal can be exported and standard signal two-way is delivered to dsp chip to determine each tuning section through certain calculating after AD conversion
The offset of electric current, is further ensured that stablizing of laser wavelength and power output.
Whole control section includes：Digital signal processor DSP utilizes the integrated constant-current source of SPI communication Interface Controller to drive core
Piece realizes the control design case of the 5 road electric currents to tunable optical source；DSP realizes to high accuracy TEC Design of Drive and Control Circuit；Monolithic
The feedback signal of the optical wavelength output of module that formula SG-DBR is tunable is delivered to dsp chip by A/D chip and is carried out process circuit and sets
Meter；The peripheral FLASH of dsp chip, SDRAM, serial communication circuit design；Later stage is used for the PD detection electricity of tunable wavelength demodulation
Road design etc..
As shown in figure 1, encapsulating SG-DBR continuously adjustable semiconductor laser module for the single-chip integration butterfly of the present invention
Control principle drawing.Control method includes single-chip integration voltage controlled current source drive circuit, optical wavelength lock circuit, the control of high accuracy TEC
Circuit processed, dsp chip and light source module, wherein：
Including single-chip integration voltage controlled current source drive circuit, optical wavelength lock circuit, high accuracy TEC control circuit, DSP core
Piece and light source module it is characterised in that：
Described dsp chip adjusts the integrated constant current in described single-chip integration voltage controlled current source drive circuit by SPI1 bus
Source drive chip, exports to control the wavelength of described light source module to export for changing electric current；
Described high accuracy TEC circuit is for controlling the operating ambient temperature of laser instrument constant in setting value；It is by described DSP
Chip arranges temperature value or direct change temperature control by the respective pin of DA fuction output magnitude of voltage to temperature control chip
Corresponding resistor in the circuit of chip perimeter processed is arranging；
Described optical wavelength lock circuit gathers the two-way current value of light source module output, and is converted to voltage, by AD mould
Block is converted to digital signal and delivers to dsp chip or be directly inputted into the built-in A/D module of described dsp chip and be acquired, for anti-
The output of feedback control and compensation constant-current source is it is ensured that stablizing of laser module wavelength and power output.
The function that all designs are all based on one chip SG-DBR tunable optical source module is carried out, and below modules is entered
One step describes in detail：
(1) single-chip integration constant current source driving circuit：Its core is integrated constant-current source drive chip, exportable 9 of this chip
The electric current of passage, but the butterfly encapsulated laser module of the present invention only needs to 5 paths inputs, so dsp chip passes through
SPI1 bus transfer control command gives this integrated constant-current source drive chip so as to 5 road electric currents of output different range are meeting butterfly
Shape encapsulates the electric current input requirements of semiconductor laser.Defeated with the continuous wavelength that reaches current control tunable semiconductor laserses
Go out.
SG-DBR semiconductor laser with tunable module need 5 road Constant current inputs, including before Bragg grating area, gain
Area, phase adjustment area and rear Bragg grating area, quasiconductor amplification region.
The current value range of the required adjustment in each area is different, is single-chip integration voltage controlled current source used in invention, integrated
Degree is high, good stability, the features such as peripheral circuit design is simple, is MAX5113, this chip is 14,9 lead to used in design
Road, the DAC chip of electric current output, this chip is powered using 3V, tries one's best with other parts power system design in system and unifies；
MAX5113 comprises an internal reference voltage source, and SPI interface driving period clock speed reaches as high as 25MHz, and 9 passages divide
Constant-current source can be provided, there is very high output synchronicity.And the minimum dimension of this chip is up to 3mm*3mm.With some discrete 5
The constant-current sources such as road mirror image, howland are compared, and it is little that single-chip integration formula constant-current source has a size, and speed is fast, and output current numerical control is continuous
Adjust, output synchronicity good the features such as.Be the SPI module that is internally integrated using DSP in this invention to be to realize to MAX5113
Control output, be highly suitable for automatically controlled semiconductor laser with tunable.
(2) high accuracy TEC control circuit:Its core is temperature control chip, for ensureing butterfly encapsulation semiconductor laser
The operating ambient temperature of device constant in some setting value.Temperature control chip is to be exclusively used in temperature control, high precision, and safety is good,
Peripheral circuit is simple, according to some temperature value of design temperature steady operation, DSP can control temperature control chip enable and
The steady statue situation of collecting temperature control chip.
Two ways is provided with for preferred temperature arranges value：A.DSP chip can pass through DA fuction output magnitude of voltage
Respective pin to temperature control chip to arrange temperature value；B. can directly change in the circuit of temperature control chip periphery
Corresponding resistor arranging, after respective resistivity values determine, just cannot change by temperature settings.
Generally, semiconductor laser light source will appear from wave length shift with the rising of temperature, and emission wavelength is with temperature
Degree change turns to 0.2～0.3nm/ DEG C, and spectral width increases therewith, affects bright-colored degree.In addition, temperature often raises 1 DEG C, partly lead
The luminous intensity of body laser can correspondingly reduce 1% about.Therefore, using good radiating and constant temperature system for guarantee half
The reliable and stable operation of conductor laser has great importance, in order to design high-resolution continuous tunable frequency-stabilized laser light source
Output, the temperature stability of all temperature control chips of application claims is less than ± 0.003 DEG C, for example：MAX1978,
HTC1500, WTC3243 etc..So high accuracy TEC control circuit is namely based on the TEC temperature control chip of these high stabilities
It is designed.General butterfly encapsulation inside great majority are integrated with the critesistor of a negative temperature coefficient, to sense tunable half
Temperature change within conductor laser light source module, the fiducial temperature input of this thermo-sensitive resistor temperature sensor and design enters
Differential amplifier circuit, the deviation now producing is delivered to compensation network (PID network) and is compensated to control driving rear class driving stage
Output；Mostly integrated simulation proportional plus integral control loop circuit (PID network) wherein inside temperature control chip, by adjusting week
The capacitance resistance on side can be adjusted it is possible to arrange the maximum heating of TEC, refrigeration electric current and bias voltage；It is big that TEC exports
Power drive electric current usually has MOSFET pipe or H-bridge circuit to realize, and the TEC control chip of high stable typically all can be driving
Circuit is integrated and chip internal.Based on above principle explanation, this high accuracy TEC control circuit can achieve can to outside SG-DBR
The high accuracy temperature control of tuned laser light source module, realizes the stable output of external laser.
(3) optical wavelength lock circuit design：Directly modulation or ripple are being carried out to SG-DBR semiconductor laser with tunable
Larger frequency jitter can be introduced in the output of laser instrument during long switching, when this occurs can be in optic communication and light sensing
The deterioration of whole system when in measuring system, can be caused.So in order to ensure stablizing of laser output wavelength, simultaneously according to list
The piece integrated SG-DBR tunable semiconductor light source module characteristic of itself, invention is that the current signal exporting light source module is changed
For passing through positive feedback amplifying circuit after voltage signal, the AD pin being fed directly to dsp processor is acquired, and the putting of amplifier
Big multiple is come programme-control amplification by DSP by SPI2.It is further ensured that the reliability of hardware circuit it is ensured that input is believed
Number within the zone of reasonableness of the AD port of DSP.Remove luminous power as the feedback impact to system for the signal simultaneously.
The two-way current value that semiconductor laser with tunable module exports is turned by optical wavelength lock circuit through Acquisition Circuit
After being changed to voltage, by two ways, follow-up data algorithm is processed.Method is：A. pass through high-resolution A/D chip (extremely
It is 12 A/D chip less) be converted to digital signal and deliver to dsp chip and carry out follow-up data algorithm process:B. it is directly inputted into DSP
The A/D module of built-in chip type is acquired, and then carries out follow-up data algorithm process.Result after the completion of process is used for feedback control
System compensates the output of constant-current source it is ensured that stablizing of wavelength and power.
Because the current value fluctuation range of object semiconductor laser with tunable output is big, in order to ensure the extremely outside AD of output
Institute's permissible range of the A/D module that chip or DSP are internally integrated, so employ digital potentiometer to control in Acquisition Circuit
The amplification of amplifying circuit.The resistance size of this digital potentiometer is to be controlled by SPI2 by DSP.
(4) optical modulator circuit design：Wavelength output based on tunable semiconductor light source, through the test mesh of external environment
Mark change, can cause the change of output wavelength.Sometime in the case of known output wavelength, environment becomes to external world simultaneously
The change that change causes carries out contrast with known wavelength after the collection of PD Acquisition Circuit and is demodulated, and this invention is by light source
With demodulator circuit with being designed on one piece of circuit board, demodulator circuit is by outside optical signal input, by control circuit
PD testing circuit (adopts photodiode, realizes opto-electronic conversion, it is low, sensitive that it is followed by a stability height, good linearity, noise
The trsanscondutance amplifier of degree does preposition amplification, and the signal after amplification is filtered through two grades of RC filter circuits), the electricity after conversion
The A/D module that pressure signal delivers to DSP is acquired.The detection that tunable optical inputs to external world of this circuit realiration, is the later stage to control mould
The demodulation of block in house software provides data basis.
(5) communication interface of PERCOM peripheral communication, usually serial ports RS232 or anti-interference energy are also included in this control system
The stronger transmission range of power RS485 interface circuit composition farther out.Purpose can be by host computer and sends electric current tuning order use
" wavelength-electric current " look-up table in test semiconductor laser with tunable.Simultaneously can by the demodulation result that DSP exports upload in
Host computer.Next extends out Flash chip and is used for storing " wavelength-electric current " look-up table etc..In order to ensure laser output wavelength work(
Rate stability and shorter wavelength stabilization output time, DSP can carry out school to the wavelength information of optical wavelength lock circuit collection
Just, resolve relevant treatment to compensate tuning current operation；And fast demodulation is carried out to the external environment condition data receiving it is desirable to
Processor has the ability processing quick processing data and storage, so this control circuit also extends out SDRAM chip.Can meet can
The high performance nature of tunable semiconductor laserses.
The butterfly encapsulation semiconductor laser with tunable of the SG-DBR based on this kind of control system has small volume, weight
Gently, wavelength output resolution ratio is high, the features such as good stability, is particularly well-suited in jumbo optical fiber sensing network, especially suitable
For the special aerospace field of environmental requirement.
Described accompanying drawing is only and draws schematically and not in scale.Although entering to the present invention already in connection with preferred embodiment
Go description, it is to be understood that protection scope of the present invention is not limited to embodiment as described herein.
Explanation in conjunction with the present invention disclosing here and practice, the other embodiment of the present invention is for those skilled in the art
All will be readily apparent and understand.Illustrate and embodiment be to be considered only as exemplary, the true scope of the present invention and purport equal
It is defined in the claims.
Claims (10)
1. a kind of butterfly encapsulates SG-DBR semiconductor laser with tunable module control method, including single-chip integration voltage controlled current source
Drive circuit, optical wavelength lock circuit, high accuracy TEC control circuit, dsp chip and light source module it is characterised in that：
The integrated constant-current source that described dsp chip is adjusted by spi bus in described single-chip integration voltage controlled current source drive circuit drives
Dynamic chip, exports to control the wavelength of described light source module to export for changing electric current；
Described high accuracy TEC circuit is for controlling the operating ambient temperature of laser instrument constant in setting value；It is by described dsp chip
Temperature value or direct change temperature control core are arranged by the respective pin of A/D module output voltage values to temperature control chip
Corresponding resistor in the circuit of piece periphery is arranging；
Described optical wavelength lock circuit gathers the two-way current value of light source module output, and is converted to voltage, is turned by A/D module
It is changed to digital signal to deliver to dsp chip or be directly inputted into the built-in A/D module of described dsp chip and be acquired, for feedback control
System compensates the output of constant-current source it is ensured that stablizing of laser module wavelength and power output.
2. control method according to claim 1 it is characterised in that：Described control circuit also include optical modulator circuit and
PD testing circuit, outside optical signal is inputted by described optical modulator circuit, the voltage letter after described PD testing circuit is changed
The A/D module number delivering to dsp chip is acquired.
3. control method according to claim 2 it is characterised in that：Described dsp chip is to described optical wavelength lock circuit
Collection wavelength information be corrected, resolve relevant treatment come to compensate tuning current operation and to the external environment condition number receiving
According to carrying out fast demodulation.
4. control method according to claim 3 it is characterised in that：Described dsp chip interface also includes SDRAM chip.
5. control method according to claim 1 it is characterised in that：It is all that described high accuracy TEC control circuit controls
The temperature stability of temperature control chip is less than ± 0.003 DEG C.
6. control method according to claim 1 it is characterised in that：Described dsp chip interface also includes FLASH chip,
Described FLASH chip is used for storing " wavelength-electric current " look-up table.
7. control method according to claim 1 it is characterised in that：Described dsp chip interface also includes SDRAM, serial ports
Telecommunication circuit, described serial communication circuit is that RS232 or RS485 interface circuit forms, for sending electric current by host computer
Tune command is used for testing " wavelength-electric current " look-up table of semiconductor laser with tunable, can export dsp chip simultaneously
Demodulation result uploads in host computer.
8. control method according to claim 1 it is characterised in that：Described feedback signal includes reference signal and standard letter
Number.
9. control method according to claim 1 it is characterised in that：It is defeated that integrated constant-current source drive chip includes five road electric currents
Go out area, respectively semiconductor optical amplifier electric current output area, gain region electric current output area, phase-section current output area, front grating
And after light gate current output area, the current value range of wherein above-mentioned each area adjustment is different.
10. control method according to claim 1 it is characterised in that：Described wave length shift is subject to temperature drift effects, described
It is 5pm that high accuracy TEC control circuit controls the wavelength drift scope of light source module.
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| CN201910292365.9A CN109802298B (en) | 2016-10-21 | 2016-10-21 | Butterfly-shaped packaged SG-DBR tunable semiconductor laser module control system |
| CN201610920193.1A CN106410604B (en) | 2016-10-21 | 2016-10-21 | Butterfly encapsulates SG-DBR semiconductor laser with tunable module control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107543537A (en) * | 2017-07-10 | 2018-01-05 | 北京控制工程研究所 | A kind of method for improving optic fiber gyroscope graduation factor stability |
| CN108964773A (en) * | 2018-06-06 | 2018-12-07 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module temperature-compensation method and device |
| CN113392750A (en) * | 2021-06-10 | 2021-09-14 | 武汉光迅科技股份有限公司 | Method and device for searching wavelength of tunable laser |
| CN113964646A (en) * | 2019-12-25 | 2022-01-21 | 飞巽传感技术(上海)有限公司 | Control method and device of tunable laser |
| CN114204411A (en) * | 2021-11-03 | 2022-03-18 | 武汉光迅科技股份有限公司 | Laser equipment |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020075918A1 (en) * | 2000-05-04 | 2002-06-20 | Crowder Paul F. | Open loop control of SGDBR lasers |
| CN101694922A (en) * | 2009-10-19 | 2010-04-14 | 浙江大学 | System for controlling stability of high-stability semiconductor laser light source |
| CN103701033A (en) * | 2013-11-26 | 2014-04-02 | 上海华魏光纤传感技术有限公司 | Work protection system for DFB (distributed feed back) laser |
| CN103715604A (en) * | 2013-12-16 | 2014-04-09 | 上海华魏光纤传感技术有限公司 | Driving system and driving method of DFB laser |
| CN105764177A (en) * | 2014-12-15 | 2016-07-13 | 青岛海信宽带多媒体技术有限公司 | Driving method and driving circuit of laser in optical module |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IES20020710A2 (en) * | 2002-09-02 | 2004-03-10 | Intune Technologies Ltd | Method for detection of regions of instability in tunable laser |
| JP5556137B2 (en) * | 2009-11-18 | 2014-07-23 | 住友電気工業株式会社 | Semiconductor laser device |
| CN102545007B (en) * | 2012-02-08 | 2013-12-11 | 武汉奥新科技有限公司 | Tunable laser and method for locking and monitoring wavelength of tunable laser |
| CN103811994A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Working point variable semiconductor laser |
| CN103297147A (en) * | 2013-05-21 | 2013-09-11 | 武汉奥新科技有限公司 | SG-DBR (sampled grafting distributed bragg reflection) tunable laser device module and control method implemented by same |
-
2016
- 2016-10-21 CN CN201610920193.1A patent/CN106410604B/en active Active
- 2016-10-21 CN CN201910292365.9A patent/CN109802298B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020075918A1 (en) * | 2000-05-04 | 2002-06-20 | Crowder Paul F. | Open loop control of SGDBR lasers |
| CN101694922A (en) * | 2009-10-19 | 2010-04-14 | 浙江大学 | System for controlling stability of high-stability semiconductor laser light source |
| CN103701033A (en) * | 2013-11-26 | 2014-04-02 | 上海华魏光纤传感技术有限公司 | Work protection system for DFB (distributed feed back) laser |
| CN103715604A (en) * | 2013-12-16 | 2014-04-09 | 上海华魏光纤传感技术有限公司 | Driving system and driving method of DFB laser |
| CN105764177A (en) * | 2014-12-15 | 2016-07-13 | 青岛海信宽带多媒体技术有限公司 | Driving method and driving circuit of laser in optical module |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107543537A (en) * | 2017-07-10 | 2018-01-05 | 北京控制工程研究所 | A kind of method for improving optic fiber gyroscope graduation factor stability |
| CN107543537B (en) * | 2017-07-10 | 2019-12-20 | 北京控制工程研究所 | Method for improving scale factor stability of fiber-optic gyroscope |
| CN108964773A (en) * | 2018-06-06 | 2018-12-07 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module temperature-compensation method and device |
| CN113964646A (en) * | 2019-12-25 | 2022-01-21 | 飞巽传感技术(上海)有限公司 | Control method and device of tunable laser |
| CN113964646B (en) * | 2019-12-25 | 2023-08-01 | 飞巽传感技术(上海)有限公司 | Control method and device of tunable laser |
| CN113392750A (en) * | 2021-06-10 | 2021-09-14 | 武汉光迅科技股份有限公司 | Method and device for searching wavelength of tunable laser |
| CN114204411A (en) * | 2021-11-03 | 2022-03-18 | 武汉光迅科技股份有限公司 | Laser equipment |
| CN114204411B (en) * | 2021-11-03 | 2023-10-03 | 武汉光迅科技股份有限公司 | Laser equipment |
Also Published As
| Publication number | Publication date |
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| CN109802298A (en) | 2019-05-24 |
| CN109802298B (en) | 2021-03-19 |
| CN106410604B (en) | 2019-05-07 |
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