CN203661071U - Optical module - Google Patents
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- CN203661071U CN203661071U CN201320889950.5U CN201320889950U CN203661071U CN 203661071 U CN203661071 U CN 203661071U CN 201320889950 U CN201320889950 U CN 201320889950U CN 203661071 U CN203661071 U CN 203661071U
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Abstract
The utility model provides an optical module comprising a light emitting assembly and a control circuit. The light emitting assembly comprises a laser that includes an active region and a distributed Bragg reflection region. The active region is used for outputting optical signals, and the distribution Bragg reflection region is used for modulation of the wavelength of optical signals. The control circuit is used for providing distributed Bragg reflection currents for the laser to control modulation of the wavelength of output optical signals in the distributed Bragg reflection region of the laser. The control circuit of the optical module provides distributed Bragg reflection region currents to the laser and controls wavelength modulation of optical signals output from the active region for the distributed Bragg reflection (DBR) region of the laser. Without a phase adjusting region, optical signals output from the laser just can meet requirements of an optical network. Therefore, the cost of a laser in an ONU optical module is reduced and thus the cost of an ONU optical module is reduced.
Description
Technical field
The utility model relates to optical communication field, relates in particular to a kind of optical module.
Background technology
EPON (Passive Optical Network is called for short PON) is as main Access Network in current communication network, comparatively ripe at present.At present, stacking time-division wavelength division multiplexing (Time-Wavelength Division Multiplexing, be called for short in TWDM) – PON network, optical line terminal (Optical Line Terminal, be called for short OLT) and user's sidelight network element (Optical Network Unit, be called for short ONU) between adopt multiple wavelength channels to carry out data transmit-receive, each ONU adopts the light signal of adjustable wavelength laser transmitting specific wavelength.
In adjustable wavelength laser, active area is for bias current is converted to light signal, and distributed Blatt reflective (Distributed Bragg Reflector is called for short DBR) district and phase place are adjusted district and modulated for the wavelength of the light signal to active area generation.
But, the phase place adjustment control electric current of the distributed Blatt reflective electric current to laser DBR district and phase region is controlled simultaneously, make laser DBR district and phase place adjust the mode that modulate the light signal of laser active area generation simultaneously in district, the circuit structure complexity, the cost that need are high.
Utility model content
The utility model provides a kind of optical module, modulates circuit structure complexity, the problem that cost is high for solve the light signal that utilizes laser DBR district and phase place adjustment district laser active area to be produced simultaneously.
The utility model provides a kind of optical module, comprising: light emission component and control circuit;
Described light emission component comprises laser, and described laser includes source region and distributed Blatt reflective district, and described active area is converted into light signal for the bias current that described control circuit is inputted, and by described light signal output;
Described distributed Blatt reflective district is for modulating the wavelength of described light signal according to the distributed Blatt reflective electric current of described control circuit input.
In the optional scene of the first, above-mentioned control circuit comprises: main control unit, Auxiliary Control Element and the first power cell;
Described main control unit, is used to described Auxiliary Control Element that the first control signal is provided;
Described Auxiliary Control Element, obtains the second control signal for described the first control signal being carried out to negative feedback amplification processing, and described the second control signal is exported to described the first power cell;
Described the first power cell, for generating the first current signal according to the second control signal, and the distributed Blatt reflective district that described the first current signal is exported to described laser, for the distributed Blatt reflective district of described laser provides distributed Blatt reflective electric current, modulate with the wavelength of controlling the light signal of described distributed Blatt reflective district to active area output.
In a kind of implementation in above-mentioned optional scene, described Auxiliary Control Element comprises operational amplifier, the first inductance, the first electric capacity;
The positive power source terminal of described operational amplifier is connected with the first power supply by described the first inductance;
Described the first power supply is connected with ground by described the first electric capacity;
The negative power end of described operational amplifier is connected with ground;
The input of described operational amplifier is connected with the first control signal output of described main control unit;
The first control end of described operational amplifier is connected with the first output of described the first power cell;
The second control end of described operational amplifier is connected with the second output of described the first power cell;
The output of described operational amplifier is connected with the control end of described the first power cell, for described the first power cell provides the second control signal.
Alternatively, described the first power cell in above-mentioned optional scene comprises field-effect transistor, the first resistance, the second inductance and the second electric capacity;
The grid of described field-effect transistor is connected with the output of described operational amplifier, for receiving described the second control signal;
The drain electrode of described field-effect transistor is connected with second source by described the second inductance;
Described second source is connected with ground by described the second electric capacity;
The source electrode of described field-effect transistor is connected with one end of described the first resistance and the first control end of described operational amplifier;
The other end of described the first resistance is connected with the second control end of described operational amplifier and the distributed Blatt reflective current input terminal of described laser, for described laser provides distributed Blatt reflective electric current.
In another kind of optional scene, described light emission component also comprises thermostat unit, and described control circuit also comprises temperature control unit;
Described thermostat unit, for by the temperature of adjusting described laser, modulates the wavelength of the light signal of described laser to output;
Described temperature control unit, for monitoring the temperature of described laser, and controls described thermostat unit and adjusts the temperature of described laser.
In another optional scene, described control circuit also comprises the second power cell, the first switch element and second switch unit;
Described main control unit, is also used to described the second power cell that the 3rd control signal is provided;
Described the second power cell, for generating the second current signal according to described the 3rd control signal;
Described the first switch element, for when the high level signal for described the second electric current provides the first path, make described the second current signal along described the first path circulation;
Described second switch unit, for when the low level signal for described the second current signal provides alternate path, make described the second current signal flow into the active area of described laser along described alternate path, for described laser provides bias current.
In a kind of implementation of a upper optional scene, described the second power cell comprises triode, the second resistance, the 3rd resistance and the 4th resistance;
The base stage of described triode is connected with the 3rd control signal output of described main control unit by described the second resistance, to generate the second current signal according to described the 3rd control signal;
The collector electrode of described triode is connected with the 3rd power supply by described the 3rd resistance, to extract the second electric current from described the 3rd power supply;
The emitter of described triode is connected with the input of described the first switch element and described second switch unit by described the 4th resistance, so that described the second electric current flows into described the first path or described alternate path.
Alternatively, described the first switch element comprises the first diode, the 5th resistance, the 3rd electric capacity, the first switch chip and the 6th resistance;
The input of described the first switch chip is connected with the output of described the second power cell, to receive described the second current signal;
The output of described the first switch chip is connected with ground by described the 6th resistance.
The control end of described the first switch chip is connected with one end of the negative electrode of described the first diode, described the 5th resistance and one end of described the 3rd electric capacity;
The other end of described the 3rd electric capacity is connected with ground;
The power end of described the first switch chip is connected with the 4th power supply, and the earth terminal of described the first switch chip is connected with ground;
The other end of the anode of described the first diode and described the 5th resistance is connected with described high level input, with under the control of described high level signal, controls described the second current signal and flows to output from the input of described the first switch chip;
Alternatively, described second switch unit comprises the second diode, the 4th electric capacity, second switch chip, the 7th resistance and the 3rd inductance;
The input of described second switch chip is connected with the output of described the second power cell, to receive described the second current signal;
The output of described second switch chip is connected with the active area of described laser by described the 3rd inductance;
The control end of described second switch chip is connected with one end of the anode of described the second diode, described the 7th resistance and one end of described the 4th electric capacity;
The other end of described the 4th electric capacity is connected with ground;
The power end of described second switch chip is connected with the 5th power supply, and the earth terminal of described the first switch chip is connected with ground;
The other end of the negative electrode of described the second diode and described the 7th resistance is connected with described low level signal input, with under the control of described low level signal, control described second circuit signal and flow to output from the input of described second switch chip, flow into again the active area of described laser through described the 3rd inductance, for described laser active area provides bias current.
In another optional scene, described light emission component also comprises: diode backlight;
Described diode backlight, for monitoring the power of light signal of described laser output, and is converted into corresponding electric current by the power of the light signal of described laser output and exports to described control circuit;
Described control circuit, for adjusting described tertiary voltage according to the electric current of described diode output backlight, to adjust the second electric current of described the second power cell generation, thereby adjusts the power of the light signal of described laser output.
The optical module that the utility model provides, provide distributed Blatt reflective district electric current by control circuit for laser, control laser distributed Blatt reflective DBR district the light signal of active area output is carried out to wavelength-modulated, adjust district without phase place, can make the light signal of laser output meet optical-fiber network requirement, reduce the cost of laser in ONU optical module, thereby reduced the cost of ONU optical module.
Brief description of the drawings
ONU optical module embodiment mono-structural representation that Fig. 1 provides for the utility model;
ONU optical module embodiment bis-structural representations that Fig. 2 provides for the utility model;
Control circuit embodiment mono-electrical block diagram that Fig. 3 provides for the utility model Fig. 2;
The structural representation of the ONU optical module embodiment tri-that Fig. 4 provides for the utility model;
Another example structure schematic diagram of control circuit that Fig. 5 provides for the utility model.
Embodiment
ONU optical module embodiment mono-structural representation that Fig. 1 provides for the utility model.As shown in Figure 1, this optical module comprises: light emission component 110 and control circuit 120.
Wherein, light emission component 110 comprises laser 111, and laser 111 includes source region 111a and distributed Blatt reflective district 111b, and active area 111a is converted into light signal for the bias current that control circuit 120 is inputted, and by described light signal output; Distributed Blatt reflective district 111b modulates the wavelength of light signal for the distributed Blatt reflective electric current of inputting according to control circuit 120.
Conventionally, laser also comprises substrate, and above-mentioned active area 111a and distributed Blatt reflective DBR district 111b are at Grown; In addition, laser also comprises fiber waveguide, is used to the light signal in laser that path is provided.
Wherein, active area 111a can be identical with distributed Blatt reflective district with the active area in common laser with distributed Blatt reflective district 111b.Control circuit 120 can provide accurate distributed Blatt reflective electric current for laser 111, make the distributed Blatt reflective district 111b of laser 111 can realize the wavelength of light signal is modulated accurately according to accurate distributed Blatt reflective electric current, and without phase region, thereby reduce the cost of laser.
The optical module that the utility model provides, provide distributed Blatt reflective district electric current by control circuit for laser, control laser distributed Blatt reflective DBR district the light signal of active area output is carried out to wavelength-modulated, adjust district without phase place, can make the light signal of laser output meet optical-fiber network requirement, reduce the cost of laser in ONU optical module, thereby reduced the cost of ONU optical module.
ONU optical module embodiment bis-structural representations that Fig. 2 provides for the utility model.As shown in Figure 2, on the basis of the optical module shown in Fig. 1, control circuit 120 comprises: main control unit 210, Auxiliary Control Element 211 and the first power cell 212.
Wherein, main control unit 210 is used to Auxiliary Control Element that the first control signal is provided; Auxiliary Control Element 211 obtains the second control signal for the first control signal being carried out to negative feedback amplification processing, and the second control signal is exported to the first power cell 212; The first power cell 212 is for generating corresponding current signal according to the second control signal, and current signal is exported to the distributed Blatt reflective district 111b of laser, for the distributed Blatt reflective district of laser provides distributed Blatt reflective electric current, modulate with the wavelength of controlling the light signal of distributed Blatt reflective district 111b to active area output.
Concrete, the main control unit 210 in the present embodiment, can be single-chip microcomputer, or is DSP, or is the processor of other type, this is not limited herein.
Wherein, the control signal that the wavelength of light signal that main control unit 210 is exported according to laser and the corresponding relation of distributed Blatt reflective electric current are definite.For instance, if when distributed Blatt reflective electric current is I1, the wavelength of the light signal of laser output is λ
1, when distributed Blatt reflective electric current is I2, the wavelength of the light signal of laser output is λ
2etc., in main control unit according to the corresponding relation of the wavelength of the light signal of distributed Blatt reflective electric current and laser output, determining after the wavelength of the light signal that laser need be exported, can produce the first corresponding control signal, provide corresponding distributed Blatt reflective electric current to control Auxiliary Control Element 211 and the first power cell 212 as the distributed Blatt reflective district 111b of laser 111.For reducing the impact of temperature the first control signal that main control unit 210 is exported, the signal that the first control signal that the first control unit 210 is exported is doubleway output, the first control signal of this doubleway output can input to Auxiliary Control Element 211 with the form of difference, like this, when the signal of exporting when main control unit 210 varies with temperature and changes, because the first control signal is doubleway output, two paths of signals all can vary with temperature and drift about, and drift value is identical, the value (being equivalent to the difference of the first control signal of doubleway output) that makes the first control signal that enters Auxiliary Control Element can variation with temperature and is changed.Thereby avoid due to main control unit 210 temperature influences, and made by the directly distributed Blatt reflective electric current inaccuracy of output of main control unit, and then made the wavelength inaccuracy of the light signal of optical module transmitting.
The ONU optical module that the present embodiment provides, the first control signal that main control unit 210 in control circuit is exported is voltage signal, and this first control signal is the differential signal being made up of two-way voltage signal, Auxiliary Control Element 211 and the first power cell 212 carry out negative feedback to the first control signal of this difference form and amplify after processing, be converted to the distributed Blatt reflective district 111b that exports to laser 111 after current signal, so that the light signal that the distributed Blatt reflective district 111b of laser 111 produces active area 111a carries out wavelength-modulated.Instead of directly utilize the single-chip microcomputer that is integrated with output current function to provide distributed Blatt reflective electric current for laser, reduce controlling cost to laser in optical module, and the control signal of main control unit 210 output difference form-separatings, has also avoided main control unit 210 to be subject to influence of temperature change and has made to export unsettled problem.
Control circuit embodiment mono-electrical block diagram that Fig. 3 provides for the utility model Fig. 2.As shown in Figure 3, the Auxiliary Control Element 211 in this control circuit 120 comprises operational amplifier 310, the first inductance 311 and the first electric capacity 312.
Wherein, the positive power source terminal+Vs of operational amplifier 310 is connected with the first power supply v1 by the first inductance 311; The first power supply v1 is connected with ground GND by the first electric capacity 312; Negative power end-the Vs of operational amplifier 310 is connected with ground GND; The input (+IN ,-IN) of operational amplifier 310 is connected with the first control signal output of main control unit 210; The first control end sense of operational amplifier 310 is connected with the first output of the first power cell 212; The second control end ref of operational amplifier 310 is connected with the second output of the first power cell 212; The output out of operational amplifier 310 is connected with the control end of the first power cell 212, for the first power cell provides the second control signal.
Further, this first power cell 212 comprises field-effect transistor 320, the first resistance 321, the second inductance 322 and the second electric capacity 323.
Wherein, the grid of field-effect transistor 320 is connected with the output out of operational amplifier 310, for receiving the second control signal; The drain electrode of field-effect transistor 320 is connected with second source v2 by the second inductance 322; Second source v2 is connected with ground GND by the second electric capacity 323; The source electrode of field-effect transistor 320 is connected with one end of the first resistance 321 and the first control end sense of operational amplifier 310; The other end of the first resistance 321 is connected with the second control end ref of operational amplifier 310 and the distributed Blatt reflective current input terminal of laser 111, for laser 111 provides distributed Blatt reflective electric current.
Concrete, two voltage signals that vary in size for amplitude of the first control signal output output of main control unit 210, this first control signal is passed through respectively in the positive-negative input end input operational amplifier 310 of operational amplifier 310.
Wherein, above-mentioned the first inductance 311, the first electric capacity 312, the second inductance 322 and the second electric capacity 323 are that the first power supply v1 and second source v2 are carried out to filtering, ensure to be carried in the voltage stabilization on operational amplifier 310 and field-effect transistor 320 and the filtering device that arranges.
For instance, operational amplifier 310 is chip AD8278, and field-effect transistor 320 is N slot field-effect transistor, suppose that the first resistance 321 is connected side voltage with the second control end of operational amplifier 310 is V2, the first resistance 321 is connected side voltage with field-effect transistor 320 is V1, the first resistance 321 resistances are R, and distribution bragg feedback current IDBR can calculate by formula (1):
IDBR=（V1-V2）/R （1）
If the voltage magnitude of the first control signal of the positive input terminal of operational amplifier 310 is VDA1, the voltage magnitude of the first control signal of negative input end is VDA2, can push type (2) according to circuit
（V1-V2）=(VDA1-VDA2)/2 （2）
Be IDBR=(VDA1-VDA2)/(2*R).
Concrete, if main control unit is single-chip microcomputer, VDA1 and VDA2 are the voltage signals of single-chip microcomputer output, it is 2.5V/4096=0.61mv that the voltage signal of single-chip microcomputer output can be controlled each lattice point voltage, can control like this IDBR current precision is 0.61mv/(2*R), thereby just can control wavelength accuracy by IDBR electric current is 1pm, and IDBR can regulate within the scope of the mA of 0mA～(2.5V/(2*R), thereby regulate the wave-length coverage of laser transmitting, so, can save the phase control district in laser, reduce the volume of laser, save the control to laser phase controlled area electric current, reduce the cost of laser.
It should be noted that, the first power supply v1 and second source v2 in the above embodiment of the utility model can be same power supplys, can be also different power supplys, and the present embodiment does not limit this.
DBR district carries out wavelength-modulated according to the size of distribution bragg feedback current Idbr to the light signal of laser output, ensure that wavelength is highly stable on each wavelength, under burst mode, wavelength can be stablized rapidly, thereby has realized the light signal of laser stable output wavelength.
Conventionally, because the performances such as the wavelength of laser output optical signal, spectrum width, side mode suppression ratio, utilizing emitted light power, extinction ratio are all relevant with the working temperature of laser, under different working temperatures, the performance difference of the light signal of laser output.Preferably, above-mentioned light emission component 110 also comprises thermostat unit, and control circuit 120 also comprises temperature control unit.
Wherein, thermostat unit, for by the temperature of adjusting laser 111, modulates the wavelength of the light signal of laser 111 to output; Temperature control unit is for monitoring the temperature of laser 111, and controls described thermostat unit and adjust the temperature of described laser.
Concrete, temperature control unit can be thermoelectric (al) cooler (Thermo Electric Cooler, be called for short TEC) or heater, accordingly, laser 111 also comprises thermistor or temperature sensor, for the working temperature of laser being converted to resistance value or voltage, current signal, and exports to temperature adjustment unit, wherein, for the working temperature of laser 111 is controlled accurately, TEC or heater need fit tightly with laser 111.
Temperature adjustment unit is by the resistance of monitoring thermistor, or the signal to temperature sensor output is monitored, and according to the corresponding relation of the resistance value of thermistor and temperature, or according to the temperature characterisitic of temperature sensor, determine the Current Temperatures of laser 111, and control temperature regulate the temperature of laser is regulated.Such as, if laser works is in the time that temperature is 40 DEG C, exportable wavelength stabilization light signal, and temperature control unit is by the resistance of monitoring thermistor, find that by judgement the current working temperature of laser is lower than 40 DEG C of set points, can control TEC or heater heats laser, make it be operated in 40 DEG C, thereby ensure the performance such as wavelength, spectrum width, side mode suppression ratio, utilizing emitted light power, extinction ratio stable of laser output optical signal.
The optical module that the present embodiment provides, utilize the control circuit of less components and parts composition, can be laser accurate distributed Blatt reflective electric current is provided, make laser adjust district without phase place, only utilize DBR district can realize the accurate modulation of the wavelength of optical signal to laser output, not only reduced the cost of control circuit, also reduced the cost of laser, the cost of optical module in TWDM-PON network is reduced greatly, for the development of TWDM-PON network provides condition.
Conventionally, ONU optical module is divided into symmetrical expression and asymmetric, and symmetrical expression refers to that the emission rate of ONU optical module is identical with receiving velocity, and asymmetric refers to that the emission rate of ONU optical module is different with receiving velocity.For asymmetric ONU optical module, if ONU optical module emission wavelength is that 4*100GHZ is adjustable, be that laser can be modulated four wavelength, wavelength interval is 100 gigahertzs (GHZ), wavelength-modulated refers to that laser can export the light signal of specific wavelength, the wavelength interval of processing due to this ONU is 100GHZ, be that each wavelength interval is 0.8nm, so just require laser very accurate to the modulation of wavelength, for symmetrical expression ONU optical module, the utility model utilizes control circuit to provide the distributed Blatt reflective DBR electric current in district for laser, make its light signal to active area output carry out wavelength-modulated, make wavelength can be stabilized in one very accurately on wavelength.
To asymmetric ONU optical module, if ONU optical module emission wavelength is that 4*100GHZ is adjustable, the wavelength interval that ONU processes is 100GHZ, and emission rate is 2.5Gbt/s, and receiving velocity is 10Gbt/s.The burst transmissions of ONU optical module just refers to if to ONU optical module burst burst control signal, when burst level is while being low, ONU optical module need to be set up rapidly a normal light signal within 12.8 nanoseconds (ns), when burst level is while being high, ONU optical module will be closed laser completely within 12.8ns, not Output optical power, ensures that bright dipping is less than-40 decibels above milliwatts (dBm).
Realize burst transmissions for guarantee asymmetric ONU optical module, need to control the bias current of the active area input of laser in optical module.The structural representation of the ONU optical module embodiment tri-that Fig. 4 provides for the utility model.As shown in Figure 4, the control circuit 120 in the optical module shown in Fig. 2 also comprises: the second power cell 410, the first switch elements 420 and second switch unit 430.
Wherein, main control unit 210 is also used to the second power cell 410 that the 3rd control signal is provided; The second power cell 410 is for generating the second current signal according to the 3rd control signal; The first switch element 420 for when the high level signal for the second current signal provides the first path, make the second current signal along described the first path circulation; Second switch unit 430 for when the low level signal for the second current signal provides alternate path, make the second current signal flow into the active area 111a of laser 111 along alternate path, for laser 111 provides bias current.
Concrete, another example structure schematic diagram of control circuit that Fig. 5 provides for the utility model.As shown in Figure 5, the second power cell 410 in Fig. 4 comprises triode 501, the second resistance 502, the 3rd resistance 503 and the 4th resistance 504.
Wherein, the base stage of triode 501 is connected with the 3rd control signal output of main control unit 120 by the second resistance 502, to generate the second current signal according to the 3rd control signal; The collector electrode of triode 501 is connected with the 3rd power supply v3 by the 3rd resistance 503, to extract the second electric current from the 3rd power supply v3; The emitter of triode 501 is connected with the input of the first switch element 420 and second switch unit 430 by the 4th resistance 504, so that the second electric current flows into the first path or alternate path.
Wherein, the 3rd power supply v3 can be identical with above-mentioned the first power supply v1 or second source v2, also can be different, and the present embodiment does not limit this.
Further, the first switch element 420 comprises the first diode 505, the 5th resistance 506, the 3rd electric capacity 507, the first switch chip 508 and the 6th resistance 509.
Wherein, the input NC of the first switch chip 508 is connected with the output of the second power cell 410, to receive the second current signal; The output COM of the first switch chip 508 is connected with ground GND by the 6th resistance 509.The control end IN of the first switch chip 508 is connected with one end of the negative electrode of the first diode 505, the 5th resistance 506 and one end of the 3rd electric capacity 507; The other end of the 3rd electric capacity 507 is connected with ground GND; The power end V of the first switch chip 508 is connected with the 4th power supply v4, and the earth terminal GND of the first switch chip is connected with ground GND; The other end of the anode of the first diode 505 and the 5th resistance 506 is connected with high level input burst1, with under the control of high level signal, controls the second current signal and flows to output from the input of the first switch chip;
Correspondingly, second switch unit 430 comprises the second diode 510, the 4th electric capacity 511, second switch chip 512, the 7th resistance 513 and the 3rd inductance 514.
Wherein, the input NC of second switch chip 512 is connected with the output of the second power cell 410, to receive the second current signal; The output COM of second switch chip 512 is connected with the active area of laser 111 by the 3rd inductance 514; The control end IN of second switch chip 512 is connected with one end of the anode of the second diode 510, the 7th resistance 513 and one end of the 4th electric capacity 511; The other end of the 4th electric capacity 511 is connected with ground GND; The power end V of second switch chip 512 is connected with the 5th power supply V5, and the earth terminal GND of the first switch chip 512 is connected with ground GND; The other end of the negative electrode of the second diode 510 and the 7th resistance 513 is connected with low level signal burst2 input, with under the control of low level signal, control second circuit signal and flow to output COM from the input NC of second switch chip 512, the active area 111a that flow into again laser 111 through the 3rd inductance 514, for laser, 111 active area 111a provide bias current.
Wherein, high level signal burst1 and low level signal burst2 can be same signal at state in the same time not, the first switch chip 508 and second switch chip 512 are subject to the control of same signal, or also high level signal burst1 and low level signal burst2 can be divided and be arranged, be carried in respectively in the different moment on the control end of the first switch chip 508 and second switch chip 512, to control the on off state of the first switch chip 508 and second switch chip 512.Whether a kind of preferably implementation in the present embodiment is that this high level signal burst1 and low level signal burst2 are the burst control signal by the control system input at optical module place, luminous by this optical module of system control at optical module place.The utility model embodiment describes as the outside same burst control signal of inputting as example taking this high level signal burst1 and low level signal burst2.
For instance, if the first switch chip 508 and second switch chip 512 are respectively MAX4707 and 4706, in the time that signal burst1 is high level, second switch chip 512 is without control signal, its output COM and input NC disconnect, the output COM of the first switch chip 508 is connected with input NC, thereby the electric current that triode 501 produces flows to ground GND through emitter through the 5th resistance 510; When burst1 level is while being low, the first switch chip 508 is without control signal, the output COM of the first switch chip 508 and input NC disconnect, the output COM of second switch chip 512 is connected with input NC, thereby make electric current that triode 501 produces flow into the input of second switch chip 512 through emitter, the active area 111a that exports to again laser 111 from the output output of second switch chip 512 through inductance 514, for laser provides bias current, thereby makes laser luminous.
Wherein, the first diode 505, the 5th resistance 506, the first electric capacity 507, the second diode 510, the introducing of the second electric capacity 511 and the 7th resistance 513, can realize the quick control to the first switch chip 508 and second switch chip 512, make its input and output side connect fast or disconnect, in the time that burst is high level, the first diode 505 conductings, the second diode 510 ends, thereby high level can be controlled the first switch chip 508 rapidly, and due to the existence of the 7th resistance 513, slow down the speed of high level control second switch chip 512, thereby can quick closedown export to the bias current of laser, when burst level is while being low, the first switch chip 508 ends rapidly, second switch chip 512 can be opened rapidly, fast for laser provides bias current.
For match circuit, because laser internal resistance is generally 20 ohm of left and right, so the 6th resistance 509 can adopt 20 ohm, this resistance can be selected different resistance resistance along with the characteristic difference of laser simultaneously, or adopts a fast diode to substitute.
Simultaneously, the size of the current signal that the second power cell 410 produces according to tertiary voltage signal can regulate by the resistance of controlling the second resistance 502, the large I that is the control circuit electric current of exporting to laser active area regulates by the resistance of controlling the second resistance 502, this resistance value is less, the bias current of exporting to laser is larger, thereby makes the luminous power of laser output larger.
In addition, the inductance 513 between the active area input of the output of second switch chip 512 and laser, is used for the bias current that inputs to laser to carry out filtering, and the large I of this inductance regulates according to the characteristic of laser active area.
It should be noted that, above-mentioned the first switch chip 508 and second switch chip 512 can adopt other can realize the switch chip of speed-sensitive switch, and the present embodiment does not limit this.
Consider that laser exists restriction aspect the direct modulation of 10Gb/s speed, in asymmetric ONU optical module, increases semiconductor amplifier SOA and electroabsorption modulator EAM conventionally in light emission component.SOA is for carrying out power amplification to the light signal of laser output; EMA is for carrying out electro-absorption modulation to light signal.In the integrated EAM electroabsorption modulator of SOA front end, modulate by EAM, make to launch light wave and meet the requirement of modulation rate 10Gb/s.
It should be noted that, in the laser in above-mentioned ONU optical module, can also comprise: phase place is adjusted district, for the wavelength of described light signal being carried out to meticulous modulation according to phase control electric current.Wherein, phase place is adjusted district too at Grown.Above-mentioned ONU optical module, adopt high-precision DAC control circuit to provide distributed Blatt reflective electric current for laser, can realize the wavelength to 4*100GHZ, be that wavelength interval is the accurate modulation of the output wavelength of 0.8nm, realize the accurate control to the less output wavelength in wavelength interval if want, as to wavelength interval being the accurate modulation of 0.4nm or less output wavelength, can in laser, increase phase place and adjust district, modulate wavelength jointly in YuDBR district, makes the light wavelength of ONU optical module output more accurate.
Optionally, light emission component 110 also comprises diode backlight.
Wherein, diode backlight is for monitoring the power of the light signal that laser 111 exports, and the power of the light signal that laser 111 is exported is converted into corresponding electric current and exports to control circuit 120; Control circuit 120, for adjusting tertiary voltage according to the electric current of diode backlight output, the second electric current generating to adjust the second power cell 410, thus adjust the power of the light signal of described laser output.
For the light signal of laser output is monitored and is controlled, utilize photodetection diode (Photoelectric detection diode, be called for short PD) can produce the characteristic of the wide little proportional current signal sending to laser, determine by the size of monitoring PD output current the power that laser is exported.In the time that luminous power is less than a certain rated value, increase tertiary voltage, thereby increase the second electric current that the second power cell 410 generates, increase the bias current of exporting to laser active area, the increased power that makes laser output optical signal is power-handling capability.Otherwise, if luminous power is greater than a certain rated value, reduce tertiary voltage, thereby reduce the second electric current that the second power cell 410 generates, reduce the bias current of exporting to laser active area, make the power of laser output optical signal be reduced to power-handling capability.Or the resistance that can also adjust the second resistance 402 according to the electric current of diode backlight output is modulated the size of the second electric current that the second power cell 410 generates.The size of the driving bias current providing for laser by dynamic adjustments, can swash device due to the variation of ambient temperature or the variation of the aging Output optical power causing by auto-compensation, keeps its Output optical power fluctuation range relatively stable.
The control circuit that the present embodiment provides, the bias current of laser active area is controlled with less device, realize laser active area and controlled the impact of electric current, thereby realized the radiative burst transmissions of laser, the condition that provides that is the TWDM-PON of family network with lower cost.
Finally it should be noted that: above each embodiment, only in order to the technical solution of the utility model to be described, is not intended to limit; Although the utility model is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these amendments or replacement do not make the essence of appropriate technical solution depart from the scope of the each embodiment technical scheme of the utility model.
Claims (10)
1. an optical module, is characterized in that, comprising: light emission component and control circuit;
Described light emission component comprises laser, and described laser includes source region and distributed Blatt reflective district, and described active area is converted into light signal for the bias current that described control circuit is inputted, and by described light signal output;
Described distributed Blatt reflective district is for modulating the wavelength of described light signal according to the distributed Blatt reflective electric current of described control circuit input.
2. optical module according to claim 1, is characterized in that, described control circuit comprises: main control unit, Auxiliary Control Element and the first power cell;
Described main control unit, is used to described Auxiliary Control Element that the first control signal is provided;
Described Auxiliary Control Element, obtains the second control signal for described the first control signal being carried out to negative feedback amplification processing, and described the second control signal is exported to described the first power cell;
Described the first power cell, for generating the first current signal according to the second control signal, and the distributed Blatt reflective district that described the first current signal is exported to described laser, for the distributed Blatt reflective district of described laser provides distributed Blatt reflective electric current, modulate with the wavelength of controlling the light signal of described distributed Blatt reflective district to active area output.
3. optical module according to claim 2, is characterized in that, described Auxiliary Control Element comprises operational amplifier, the first inductance and the first electric capacity;
The positive power source terminal of described operational amplifier is connected with the first power supply by described the first inductance;
Described the first power supply is connected with ground by described the first electric capacity;
The negative power end of described operational amplifier is connected with ground;
The input of described operational amplifier is connected with the first control signal output of described main control unit;
The first control end of described operational amplifier is connected with the first output of described the first power cell;
The second control end of described operational amplifier is connected with the second output of described the first power cell;
The output of described operational amplifier is connected with the control end of described the first power cell, for described the first power cell provides the second control signal.
4. optical module according to claim 3, is characterized in that, described the first power cell comprises field-effect transistor, the first resistance, the second inductance and the second electric capacity;
The grid of described field-effect transistor is connected with the output of described operational amplifier, for receiving described the second control signal;
The drain electrode of described field-effect transistor is connected with second source by described the second inductance;
Described second source is connected with ground by described the second electric capacity;
The source electrode of described field-effect transistor is connected with one end of described the first resistance and the first control end of described operational amplifier;
The other end of described the first resistance is connected with the second control end of described operational amplifier and the distributed Blatt reflective current input terminal of described laser, for described laser provides distributed Blatt reflective electric current.
5. according to the arbitrary described optical module of claim 1～4, it is characterized in that, described light emission component also comprises thermostat unit, and described control circuit also comprises temperature control unit;
Described thermostat unit, for by the temperature of adjusting described laser, modulates the wavelength of the light signal of described laser to output;
Described temperature control unit, for monitoring the temperature of described laser, and controls described thermostat unit and adjusts the temperature of described laser.
6. according to the arbitrary described optical module of claim 2～4, it is characterized in that, described control circuit also comprises the second power cell, the first switch element and second switch unit;
Described main control unit, is also used to described the second power cell that the 3rd control signal is provided;
Described the second power cell, for generating the second current signal according to described the 3rd control signal;
Described the first switch element, for when the high level signal for described the second electric current provides the first path, make described the second current signal along described the first path circulation;
Described second switch unit, for when the low level signal for described the second current signal provides alternate path, make described the second current signal flow into the active area of described laser along described alternate path, for described laser provides bias current.
7. optical module according to claim 6, is characterized in that, described the second power cell comprises triode, the second resistance, the 3rd resistance and the 4th resistance;
The base stage of described triode is connected with the 3rd control signal output of described main control unit by described the second resistance, to generate the second current signal according to described the 3rd control signal;
The collector electrode of described triode is connected with the 3rd power supply by described the 3rd resistance, to extract the second electric current from described the 3rd power supply;
The emitter of described triode is connected with the input of described the first switch element and described second switch unit by described the 4th resistance, so that described the second electric current flows into described the first path or described alternate path.
8. according to the optical module described in claim 6 or 7, it is characterized in that, described the first switch element comprises the first diode, the 5th resistance, the 3rd electric capacity, the first switch chip and the 6th resistance;
The input of described the first switch chip is connected with the output of described the second power cell, to receive described the second current signal;
The output of described the first switch chip is connected with ground by described the 6th resistance.
The control end of described the first switch chip is connected with one end of the negative electrode of described the first diode, described the 5th resistance and one end of described the 3rd electric capacity;
The other end of described the 3rd electric capacity is connected with ground;
The power end of described the first switch chip is connected with the 4th power supply, and the earth terminal of described the first switch chip is connected with ground;
The other end of the anode of described the first diode and described the 5th resistance is connected with described high level input, with under the control of described high level signal, controls described the second current signal and flows to output from the input of described the first switch chip;
9. according to the optical module described in claim 6 or 7, it is characterized in that, described second switch unit comprises the second diode, the 4th electric capacity, second switch chip, the 7th resistance and the 3rd inductance;
The input of described second switch chip is connected with the output of described the second power cell, to receive described the second current signal;
The output of described second switch chip is connected with the active area of described laser by described the 3rd inductance;
The control end of described second switch chip is connected with one end of the anode of described the second diode, described the 7th resistance and one end of described the 4th electric capacity;
The other end of described the 4th electric capacity is connected with ground;
The power end of described second switch chip is connected with the 5th power supply, and the earth terminal of described the first switch chip is connected with ground;
The other end of the negative electrode of described the second diode and described the 7th resistance is connected with described low level signal input, with under the control of described low level signal, control described second circuit signal and flow to output from the input of described second switch chip, flow into again the active area of described laser through described the 3rd inductance, for described laser active area provides bias current.
10. optical module according to claim 9, is characterized in that, described light emission component also comprises: diode backlight;
Described diode backlight, for monitoring the power of light signal of described laser output, and is converted into corresponding electric current by the power of the light signal of described laser output and exports to described control circuit;
Described control circuit, for adjusting described tertiary voltage according to the electric current of described diode output backlight, to adjust the second electric current of described the second power cell generation, thereby adjusts the power of the light signal of described laser output.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320889950.5U CN203661071U (en) | 2013-12-31 | 2013-12-31 | Optical module |
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| CN201320889950.5U CN203661071U (en) | 2013-12-31 | 2013-12-31 | Optical module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104539370A (en) * | 2014-12-22 | 2015-04-22 | 青岛海信宽带多媒体技术有限公司 | Laser and optical module |
| CN104753601A (en) * | 2013-12-31 | 2015-07-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN106125212A (en) * | 2016-08-05 | 2016-11-16 | 青岛海信宽带多媒体技术有限公司 | Optical module |
-
2013
- 2013-12-31 CN CN201320889950.5U patent/CN203661071U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104753601A (en) * | 2013-12-31 | 2015-07-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN104753601B (en) * | 2013-12-31 | 2018-04-03 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN104539370A (en) * | 2014-12-22 | 2015-04-22 | 青岛海信宽带多媒体技术有限公司 | Laser and optical module |
| CN106125212A (en) * | 2016-08-05 | 2016-11-16 | 青岛海信宽带多媒体技术有限公司 | Optical module |
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