CN106410034A - Perovskite solar cell with thermochromism performance and preparation method thereof - Google Patents
Perovskite solar cell with thermochromism performance and preparation method thereof Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention relates to a perovskite solar cell with thermochromism performance and preparation method thereof. The solar cell is obtained through the following operations: forming a rutile phase vanadium dioxide film on a non-conductive surface of a transparent conducting substrate, and orderly forming an electronic transmission layer, a perovskite absorbing layer, a hole transporting layer and a back electrode on a conducting surface on the transparent conducting substrate, wherein the thickness of the vanadium dioxide film is 500 nanometers to 100 microns. The perovskite solar cell with thermochromism performance prepared by the invention can effectively regulate the indoor temperature while realizing the photoelectric conversion, the resource and energy are saved, and the solar cell use ratio is improved.
Description
Technical field
The invention belongs to field of inorganic nano material is and in particular to a kind of perovskite solar energy with thermochromic properties
Battery and its preparation method and application field.
Background technology
In recent years, gradually aggravate in energy crisis, under the background that environmental gradually deepens, global photoelectricity research neck
Domain achieves great progress, becomes one of study hotspot of this century most prospect and strategic importance.In this area, due to
Low cost, process is simple and excellent performance, perovskite solaode becomes the study hotspot of field of photoelectric devices.This electricity
The sun light conversion efficiency that pond proposes for 2009 first is only 4%, and through the development of 7 years, nowadays authentication efficiency was up to
22%, exceed non-crystal silicon solar cell and the current electricity conversion of copper indium gallium selenium solar cell, there is the monocrystalline that matches in excellence or beauty
Silicon and the potentiality of multi-junction gallium arsenide battery.Therefore, actively develop the research for perovskite battery, optimize battery structure and composition
Material, and innovation and development sustainable to national economy from now on has great meaning.Realize the base that battery possesses high conversion efficiency
This approach is exactly to improve the extraction of photo-generated carrier, the ability separating and transporting.
Perovskite solaode comprises 5 portion of material, and this 5 part is to be transparency conductive electrode first respectively, conventional
It is FTO (mixing F tin ash) or ITO (tin indium oxide) electro-conductive glass;It is followed by electron transfer layer, for transporting photoproduction in time
Electronics and stop photohole, suppression light induced electron and photohole compound;It is perovskite absorbing material, mainly calcium again
Titanium ore type Organic leadP halogenide (ABX3:A=CH3NH3, B=Pb, X=Cl, I, Br);It is hole transmission layer again, for timely
Transport photohole and stop the compound of light induced electron, suppression light induced electron and photohole;It is finally back electrode, conventional is
Gold, silver and copper.Perovskite solaode is the novel solar battery based on organic amino group lead halide for the class.Because it has concurrently
Process is simple and the high advantage of photoelectric transformation efficiency, the shortcoming overcoming traditional silica-based solar cell complex process, same to timeliness
Rate is far above organic solar batteries and DSSC etc., is expected to realization simple process preparation efficiency and exceedes
20% electrooptical device.
Additionally, the intelligent power saving glass based on vanadium dioxide material, using its special metal semiconductor temperature control phase transformation
Thermochromic properties, have structure simply, completely dispense with switch or any artificial energy source can be achieved with temperature change of according with one's environment
The remarkable advantage such as full-automatic photo-thermal regulation and control, especially adapt to China's major part cold summer thermally area and various building demand, and
China takes its place in the front ranks of the world in this regard, is expected to obtain breakthrough in a short time, takes the lead in realizing industrialization.
Content of the invention
The present invention is directed to perovskite solaode in prior art and does not absorb for infrared ray, keeps asking of high state thoroughly
Topic, it is therefore intended that providing a kind of perovskite solaode with thermochromic properties, compares simple vanadium dioxide intelligence
For window or perovskite solaode, can effectively economize on resources the energy, improves solar energy utilization ratio.
Here, the present invention provides a kind of perovskite solaode with thermochromic properties, described solaode
Form rutile phase hypovanadic oxide thin film by the non-conductive surfaces in transparent conductive substrate and in described transparent conductive substrate
Conductive surface sequentially forms electron transfer layer, perovskite absorbed layer, hole transmission layer and back electrode and obtains, described vanadium dioxide
The thickness of thin film is 500 nanometers~100 microns, preferably 500 nanometers~50 microns, more preferably 20~50 microns.
Only absorb the visible ray in natural light for solaode, present invention introduces thermochromic material-Rutile Type
Vanadium dioxide adjusts infrared part light.Rutile phase hypovanadic oxide material has excellent SEMICONDUCTOR-METAL phase-change characteristic, when
When temperature rises to transformation temperature, because the internal phonon-electronic vibration lead device structure of vanadium dioxide changes, by monocline quasiconductor phase
It is changed into quadratic metal phase, the thin-film material of its preparation is visible high saturating, is capable of infrared regulation.The present invention proposes in perovskite
Introduce rutile phase hypovanadic oxide material in solaode, can have in conjunction with perovskite solaode and vanadium dioxide material
The energy that economizes on resources of effect, with Intelligent adjustment infrared light transmission, and can effectively control the transmission of heat.
The perovskite solaode with thermochromic properties of the present invention can be used for smart window, mainly in can
See the less demanding region of light transmission rate.Available light first passes around perovskite solaode, wherein 60% visible ray quilt
Absorption is converted to electric energy.Band gap due to perovskite absorbed layer is 1.5eV, and region of ultra-red is not absorbed.Therefore pass through battery
Some visible light and whole infrared light through vanadium dioxide Intelligent adjustment layer.When temperature is relatively low, the vanadium dioxide of semiconductor form
Infrared ray is not absorbed, keeps high permeability state.Absorb visible ray with perovskite solaode, base reservoir temperature raises,
When reaching phase transition temperature of vanadium dioxide, vanadium dioxide undergoes phase transition accordingly, is metal phase by quasiconductor phase in version, to ultrared
The light in domain produces strong absorption, thus can effectively adjust indoor temperature.This calcium titanium with thermochromic properties
Ore deposit solaode is used as window-glass, not only can effectively absorb visible ray and be converted to electric energy, and can be with intelligent control
Heat is to indoor transmission, thus saving the energy for indoor refrigeration.As can be seen here, present invention preparation has thermal discoloration
The perovskite solaode of energy can also carry out energy conversion while energy-conservation.
It is preferred that the thickness of described electron transfer layer (such as titanium deoxid film) is 10 nanometers~100 nanometers.
With respect to conventional perovskite solaode, need to control the thickness of perovskite absorbed layer, control it to visible ray
Absorb it is ensured that indoor certain visible light transmissivity.But it is as visible absorption to reduce, battery performance weakens.By adjusting
Section perovskite absorber thickness, balancing battery performance and indoor transmitance.In the present invention, the thickness of described perovskite absorbed layer is
100 nanometers~1000 nanometers, preferably 100 nanometers~500 nanometers, more preferably 100~300.Vanadium dioxide film is inhaled with perovskite
The thickness ratio receiving layer can be 200:1~50:1.
It is preferred that the thickness of described hole transmission layer is 10 nanometers~100 nanometers.
It is preferred that the thickness of described back electrode is 50 nanometers~500 nanometers.
The present invention also provide a kind of prepare the above-mentioned perovskite solaode method with thermochromic properties, including:
Rutile phase hypovanadic oxide slurry is deposited in the non-conductive surfaces of transparent conductive substrate using spin-coating method, is incubated 1 in 80-100 DEG C
Form rutile phase hypovanadic oxide thin film within~2 hours;Deposited in the conductive surface of described transparent conductive substrate using magnetron sputtering
Electron transfer layer, method is steamed altogether using double source and spin-coating method be sequentially depositing on the electron transport layer perovskite absorb layer material and
Hole transport layer material, prepares perovskite absorbed layer and hole transmission layer, is sunk on the hole transport layer by being evaporated in vacuo
Long-pending back electrode, has the perovskite solaode of thermochromic properties described in acquisition.
It is preferred that described rutile phase hypovanadic oxide slurry is by mass ratio 1:5~20 hypovanadic oxide powder and solvent mix
Close and be obtained, described solvent is preferably ethanol.
It is preferred that spin-coating method deposition rutile vanadium dioxide slurry during, rotating speed be 500 revs/min~2800 turns/
Minute, spin-coating time is 5 seconds~120 seconds.
It is preferred that it is CH that described perovskite absorbs layer material3NH3PbX3, wherein, X is at least one in Cl, Br, I.
It is preferred that described hole transport layer material is Spiro-OMeTAD.
It is preferred that described back electrode material is gold, silver-colored or copper.
By adjusting perovskite absorber thickness, being capable of balancing battery performance and indoor transmitance.Meanwhile, titanium dioxide
Vanadium material can be with Intelligent adjustment infrared transmittivity, and the corresponding heat that reduces is to indoor transmission.Therefore, present invention preparation has thermic
The perovskite solaode of discoloration, while realizing opto-electronic conversion, can effectively adjust the temperature of interior, saves money
The source energy.Additionally, the preparation method preparation process is simple of the present invention, practical.
Brief description
Fig. 1:Thermochromism perovskite solar battery structure figure of the present invention;
Fig. 2:The embodiment of the present invention 2 thermochromism perovskite solar battery efficiency;
Fig. 3:The embodiment of the present invention 2 vanadium dioxide film thermochromic properties.
Specific embodiment
Further illustrate the present invention below in conjunction with accompanying drawing and following embodiment it should be appreciated that accompanying drawing and following embodiment
It is merely to illustrate the present invention and the unrestricted present invention.
The present invention relates to one kind has thermochromic properties perovskite solaode, described solaode passes through saturating
Two surfaces of bright conductive substrates, that is, positive and negative prepare perovskite solaode (PSC) and vanadium dioxide nano thin film respectively
(VO2) and obtain.In conjunction with perovskite solaode and vanadium dioxide material, this perovskite with thermochromic properties is too
Sun can be used as window-glass by battery, not only can effectively absorb visible ray and be converted to electric energy, and can be with intelligent control heat
To indoor transmission, thus saving the energy for indoor refrigeration.
As shown in figure 1, the perovskite solaode with thermochromic properties of the present invention includes being formed at transparent leading
Electric substrate (such as FTO electro-conductive glass:FTO glass) the vanadium dioxide film of non-conductive surfaces and be sequentially formed in institute
State electron transfer layer, perovskite absorbed layer (the such as CH of the conductive surface of transparent conductive substrate3NH3PbI3), hole transmission layer
HTL and back electrode (such as Ag).It is assumed that forming vanadium dioxide film at the back side of transparent conductive substrate in this embodiment,
Form each layer of perovskite solaode in the front of transparent conductive substrate.
In the present invention, described transparent conductive substrate is not particularly limited, for example, can adopt FTO transparent conductive substrate, ITO
Transparent conductive substrate or AZO transparent conductive substrate etc..
Vanadium dioxide film in the present invention adopts rutile phase hypovanadic oxide material, and it has excellent quasiconductor-gold
Belong to phase-change characteristic, during quasiconductor phase, infrared transmittivity is higher, and during metal phase, infrared transmittivity is relatively low, the thin-film material of its composition can
See high saturating, be capable of infrared regulation.
Described rutile phase hypovanadic oxide thin film can be obtained using spin-coating method deposition rutile phase hypovanadic oxide slurry.Its
In, as spin coating liquid rutile phase hypovanadic oxide slurry by mass ratio 1:5~20 hypovanadic oxide powder and alcohol solvent mix
Close and be obtained, hybrid mode can be that the slurry of mixing is carried out 2800 revs/min, husky mill 4 hours.In addition, solvent is not limited to second
Alcohol or isopropanol, normal propyl alcohol etc..
During spin-coating method deposition rutile vanadium dioxide slurry, rotating speed can be at 500 revs/min~2800 revs/min
Clock, spin-coating time is 5 seconds~120 seconds.The thickness of vanadium dioxide film can be at 500 nanometers to 100 microns, preferably 500 nanometers
To 50 microns, more preferably 20~50 microns.The thickness of vanadium dioxide film, when 500 nanometers to 100 microns, has sunlight and adjusts
Section performance and the advantage of visible light transmissivity balance.
Form rutile phase hypovanadic oxide thin film through certain process after spin coating.Specifically, as an example, can wrap
Include:At the back side of transparent conducting glass, depositing ethanol and hypovanadic oxide powder ratio by spin-coating method is 20:1 Rutile Type
Vanadium dioxide slurry, rotating speed is 2600 rpms, and spin-coating time 40 seconds is allowed to film forming, and thickness is 500 nanometers, through 80-
Dry the rutile phase hypovanadic oxide thin film that 1-2 hour forms densification for 100 DEG C.
In this embodiment, sequentially form electron transfer layer, perovskite absorbed layer, sky in the front of transparent conductive substrate
Cave transport layer HTL and back electrode, to obtain perovskite solaode.In the present invention, each to perovskite solaode
Ingredient is not particularly limited, and its structure and preparation method are described below as an example.
First, in one layer of fine and close titanium deoxid film of transparent conductive substrate front magnetron sputtering deposition as electric transmission
Layer.
In the present invention, the thickness of titanium deoxid film can be at 10 nanometers -100 nanometers.Specifically, as an example,
Sputter procedure includes:Cavity air pressure 1.5Pa, argon and oxygen proportion 1:6, sputtering power 700W, sputter 15 minutes, form thickness
30 nano titanium oxide compacted zones.
Then, method and spin-coating method are steamed altogether by double source and perovskite absorbed layer and hole are sequentially prepared on titanium deoxid film
Transport layer.
Described perovskite absorbs layer material and can adopt CH3NH3PbX3, wherein X is halogen (Cl, Br, I), Ke Yishi
Wherein some element or the mixing of two or more element.
In the present invention, by being controlled to the thickness of perovskite absorbed layer, control it to the absorption of visible ray it is ensured that room
Interior certain visible light transmissivity.Reduce with visible absorption, battery performance weakens.Absorb thickness by adjusting perovskite
Degree, balancing battery performance and indoor transmitance.The thickness of the perovskite absorbed layer of the present invention is 100 nanometers~1000 nanometers, excellent
Select 100 nanometers~500 nanometers, more preferably 100~300nm.The thickness of perovskite absorbed layer when 100 nanometers~1000 nanometers,
There is certain visible light transmissivity.Specifically, as an example, the preparation process of perovskite absorbed layer includes:Double source steams altogether
PbI2And CH3NH3I forms the perovskite absorbed layer that thickness is 100 nanometers.
Hole transport layer material can adopt Spiro-OMeTAD.
The thickness of hole transmission layer can be 10 nanometers -100 nanometers.Specifically, as an example, hole transmission layer
Spin coating process includes:The solution that spin coating has been configured, forms the hole transmission layer that thickness is 30 nanometers after drying.
Finally, vacuum evaporation deposition back electrode is passed through on hole transmission layer.In the present invention, back electrode material can be golden,
Silver or copper.
Back electrode thickness can be 50 nanometers -500 nanometers.Specifically, as an example, vacuum evaporation deposition back electrode
Process include:Evaporation current selects 34A, evaporation time 15min, forms the back electrode that thickness is 50 nanometers.
In the present invention, vanadium dioxide film is prepared on a surface of transparent conductive substrate by spin-coating method, and transparent
Another surface of conductive substrates forms perovskite solaode does not have specific sequencing, for example, can first lead transparent
Electric substrate back prepares rutile phase hypovanadic oxide thin film, subsequently prepares perovskite solaode it is also possible to elder generation in FTO front
Prepare perovskite solaode, then prepare vanadium dioxide film.
As described above, the present invention introduces rutile phase hypovanadic oxide material in perovskite solaode, in energy-conservation
Energy conversion can also be carried out simultaneously.In conjunction with perovskite solaode and vanadium dioxide material, this have thermal discoloration
The perovskite solaode of energy is used as window-glass, not only can effectively absorb visible ray and be converted to electric energy, and permissible
Adjust infrared transmittivity intelligent control heat to indoor transmission, thus saving the energy for indoor refrigeration.
Advantages of the present invention:
Prepared by the present invention has the perovskite solaode of thermochromic properties while realizing opto-electronic conversion, Ke Yiyou
Effect adjusts indoor temperature, for comparing simple vanadium dioxide smart window or perovskite solaode, effectively saves
Energy resource, improves solar energy utilization ratio;
The preparation method preparation process is simple of the present invention, practical.
Enumerate embodiment further below to describe the present invention in detail.It will similarly be understood that following examples are served only for this
Invention is further described it is impossible to be interpreted as limiting the scope of the invention, those skilled in the art is according to this
Some nonessential improvement that bright the above is made and adjustment belong to protection scope of the present invention.Following examples are specific
Technological parameter is also only one of OK range example, and that is, those skilled in the art can be done suitably by the explanation of this paper
In the range of select, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment 1
First, at the back side of transparent conducting glass, rutile phase hypovanadic oxide slurry, rotating speed 1600r/ are deposited by spin-coating method
Min, the vanadium dioxide film of 20 μm about of prepared thickness, after 80 DEG C are processed 1 hour, form fine and close rutile vanadium dioxide
Thin film.Secondly, perovskite solaode is prepared on transparent conducting glass.Caused by magnetron sputtering deposition in conductive layer surface
Close titanium deoxid film, air pressure keeps 1.5Pa, and argon oxygen compares 6:1, sputtering power 700W, sputtering time 15min.Subsequently, double source
Method of steaming altogether prepares the perovskite absorbing material that thickness is 100nm, and it is 100nm hole transmission layer that spin-coating method prepares thickness, finally leads to
Cross vacuum evaporation deposition back electrode, evaporation current 34A, evaporation time 15min.Final acquisition has the calcium titanium of thermochromic properties
Ore deposit solaode.The perovskite solar-electricity that this has thermochromic properties is recorded by ultraviolet-visible spectrophotometer
The visible light transmissivity in pond is 15%.This is recorded by standard perovskite solar cell test system there are thermochromic properties
Perovskite solaode photoelectric transformation efficiency be 2.16%.
Embodiment 2
First, at the back side of transparent conducting glass, rutile phase hypovanadic oxide slurry, 20 μm of prepared thickness are deposited by spin-coating method
The vanadium dioxide film of left and right, after 80 DEG C are processed 1 hour, forms fine and close rutile vanadium dioxide film.Secondly, transparent
Perovskite solaode is prepared on electro-conductive glass.Thin by the fine and close titanium dioxide of magnetron sputtering deposition in conductive layer surface
Film, subsequently steams method altogether by double source and spin-coating method is sequentially prepared the perovskite absorbed layer that thickness is 300nm and hole transmission layer,
Pass through vacuum evaporation deposition back electrode (referring to embodiment 1) afterwards.Final acquisition has the perovskite solar energy of thermochromic properties
Battery.The visible light transmissivity recording the perovskite solaode that this has thermochromic properties is 13.7%.Record this tool
The photoelectric transformation efficiency having the perovskite solaode of thermochromic properties is 3.34%.
Embodiment 3
First, at the back side of transparent conducting glass, rutile phase hypovanadic oxide slurry, 20 μm of prepared thickness are deposited by spin-coating method
The vanadium dioxide film of left and right, after 80 DEG C are processed 1 hour, forms fine and close rutile vanadium dioxide film.Secondly, transparent
Perovskite solaode is prepared on electro-conductive glass.Thin by the fine and close titanium dioxide of magnetron sputtering deposition in conductive layer surface
Film, subsequently steams method altogether by double source and spin-coating method is sequentially prepared the perovskite absorbed layer that thickness is 500nm and hole transmission layer,
Pass through vacuum evaporation deposition back electrode (referring to embodiment 1) afterwards.Final acquisition has the perovskite solar energy of thermochromic properties
Battery.The visible light transmissivity recording the perovskite solaode that this has thermochromic properties is 9.26%.Record this tool
The photoelectric transformation efficiency having the perovskite solaode of thermochromic properties is 3.86%.
Embodiment 4
First, at the back side of transparent conducting glass, rutile phase hypovanadic oxide slurry, 50 μm of prepared thickness are deposited by spin-coating method
The vanadium dioxide film of left and right, after 80 DEG C are processed 1 hour, forms fine and close rutile vanadium dioxide film.Secondly, transparent
Perovskite solaode is prepared on electro-conductive glass.Thin by the fine and close titanium dioxide of magnetron sputtering deposition in conductive layer surface
Film, subsequently steams method altogether by double source and spin-coating method is sequentially prepared the perovskite absorbed layer that thickness is 200nm and hole transmission layer,
Pass through vacuum evaporation deposition back electrode (referring to embodiment 1) afterwards.Final acquisition has the perovskite solar energy of thermochromic properties
Battery.The visible light transmissivity recording the perovskite solaode that this has thermochromic properties is 11.54%.Record this tool
The photoelectric transformation efficiency having the perovskite solaode of thermochromic properties is 3.19%.
Embodiment 5
First, at the back side of transparent conducting glass, rutile phase hypovanadic oxide slurry, prepared thickness 100 μ are deposited by spin-coating method
M about vanadium dioxide film, after 80 DEG C are processed 1 hour, form fine and close rutile vanadium dioxide film.Secondly, saturating
Perovskite solaode is prepared on bright electro-conductive glass.Thin in one layer of fine and close titanium dioxide of conductive layer surface magnetron sputtering deposition
Film, subsequently steams method altogether by double source and spin-coating method is sequentially prepared the perovskite absorbed layer that thickness is 100nm and hole transmission layer,
Pass through vacuum evaporation deposition back electrode (referring to embodiment 1) afterwards.Final acquisition has the perovskite solar energy of thermochromic properties
Battery.The visible light transmissivity recording the perovskite solaode that this has thermochromic properties is 5.19%.Record this tool
The photoelectric transformation efficiency having the perovskite solaode of thermochromic properties is 1.86%.
Fig. 2 illustrates the embodiment of the present invention 2 thermochromism perovskite solar battery efficiency, PSC/VO2Represent sunlight from
Perovskite solaode face enters, and vanadium dioxide thermochromic layer enters as shown in Figure 2, and what Fig. 2 represented is that both is different
In the case of, the conversion efficiency of solaode.Fig. 3 illustrates the embodiment of the present invention 2 vanadium dioxide film thermochromic properties, by scheming
3 understand that the vanadium dioxide film of the present invention has infrared regulatory function well.Contrast different-thickness perovskite absorbed layer and
Vanadium dioxide film, can balance the perovskite solaode visible light transmissivity with thermochromic properties and opto-electronic conversion
Efficiency.For different demands, bias toward opto-electronic conversion performance or bias toward room brilliancy, thus making corresponding regulation.
Claims (10)
1. a kind of perovskite solaode with thermochromic properties is it is characterised in that described solaode passes through
The non-conductive surfaces of transparent conductive substrate form rutile phase hypovanadic oxide thin film the conductivity meter in described transparent conductive substrate
Face sequentially forms electron transfer layer, perovskite absorbed layer, hole transmission layer and back electrode and obtains, described vanadium dioxide film
Thickness is 500 nanometers~100 microns.
2. solaode according to claim 1 it is characterised in that described electron transfer layer thickness be 10 nanometers~
100 nanometers.
3. solaode according to claim 1 and 2 is it is characterised in that the thickness of described perovskite absorbed layer is 100
Nanometer~1000 nanometers.
4. solaode according to any one of claim 1 to 3 is it is characterised in that the thickness of described hole transmission layer
Spend for 10 nanometers~100 nanometers.
5. solaode according to any one of claim 1 to 4 is it is characterised in that the thickness of described back electrode is
50 nanometers~500 nanometers.
6. a kind of perovskite solaode side with thermochromic properties prepared any one of claim 1 to 5
Method is it is characterised in that methods described includes:
Rutile phase hypovanadic oxide slurry is deposited in the non-conductive surfaces of transparent conductive substrate using spin-coating method, in 80~100 DEG C
Insulation forms rutile phase hypovanadic oxide thin film in 1~2 hour;
Electron transfer layer is deposited in the conductive surface of described transparent conductive substrate using magnetron sputtering, method and rotation are steamed altogether using double source
Coating is sequentially depositing perovskite on the electron transport layer and absorbs layer material and hole transport layer material, prepares perovskite and absorbs
Layer and hole transmission layer, deposit back electrode on the hole transport layer by being evaporated in vacuo, and have thermochromism described in acquisition
The perovskite solaode of performance.
7. method according to claim 6 is it is characterised in that described rutile phase hypovanadic oxide slurry is by mass ratio 1:5
~20 hypovanadic oxide powder and solvent are mixed to prepare, and described solvent is preferably ethanol.
8. the method according to claim 6 or 7 is it is characterised in that spin-coating method deposits the mistake of rutile vanadium dioxide slurry
Cheng Zhong, rotating speed is 500 revs/min~2800 revs/min, and spin-coating time is 5 seconds~120 seconds.
9. the method according to any one of claim 6 to 8 is it is characterised in that described perovskite absorption layer material is
CH3NH3PbX3, wherein, X is at least one in Cl, Br, I.
10. the perovskite solaode with thermochromic properties any one of a kind of claim 1 to 5 is used for intelligence
The purposes of energy window.
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CN109742234A (en) * | 2019-01-21 | 2019-05-10 | 暨南大学 | A kind of translucent organic solar batteries and preparation method thereof based on thermochromism |
CN112687805A (en) * | 2020-12-28 | 2021-04-20 | 华侨大学 | Perovskite solar cell electronic transmission layer and preparation method thereof |
CN115032209A (en) * | 2022-08-11 | 2022-09-09 | 中国华能集团清洁能源技术研究院有限公司 | Quality detection method for transparent conductive film |
CN115268160A (en) * | 2022-08-08 | 2022-11-01 | 安徽华菱汽车有限公司 | Automobile and color-changing glass |
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CN109742234A (en) * | 2019-01-21 | 2019-05-10 | 暨南大学 | A kind of translucent organic solar batteries and preparation method thereof based on thermochromism |
CN112687805A (en) * | 2020-12-28 | 2021-04-20 | 华侨大学 | Perovskite solar cell electronic transmission layer and preparation method thereof |
CN112687805B (en) * | 2020-12-28 | 2023-06-02 | 华侨大学 | Preparation method of perovskite solar cell electron transport layer |
CN115268160A (en) * | 2022-08-08 | 2022-11-01 | 安徽华菱汽车有限公司 | Automobile and color-changing glass |
CN115032209A (en) * | 2022-08-11 | 2022-09-09 | 中国华能集团清洁能源技术研究院有限公司 | Quality detection method for transparent conductive film |
CN115032209B (en) * | 2022-08-11 | 2022-11-15 | 中国华能集团清洁能源技术研究院有限公司 | Quality detection method for transparent conductive film |
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