CN106409939B - 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 - Google Patents
平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 Download PDFInfo
- Publication number
- CN106409939B CN106409939B CN201610998201.4A CN201610998201A CN106409939B CN 106409939 B CN106409939 B CN 106409939B CN 201610998201 A CN201610998201 A CN 201610998201A CN 106409939 B CN106409939 B CN 106409939B
- Authority
- CN
- China
- Prior art keywords
- electrode
- diffusion
- preparation
- photoresist lift
- photoetching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 8
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 230000008719 thickening Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 2
- 239000002355 dual-layer Substances 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 29
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005247 gettering Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了平面型侧向收集结构铟镓砷红外探测器芯片的制备方法,步骤包括:1)外延材料清洗,2)淀积氮化硅扩散掩膜,3)第一次光刻,4)开扩散窗口,5)光刻胶剥离,6)闭管扩散,7)开管取片,8)第二次光刻,9)生长P电极,10)光刻胶剥离,11)淀积二氧化硅增透膜,12)P电极退火,13)第三次光刻,14)开P电极孔,15)光刻胶剥离,16)第四次光刻,17)加厚P电极,18)光刻胶剥离,19)背面抛光,20)生长N电极,21)划片。本发明制备方法制得的芯片减小了光敏元的扩散区域,可有效地减少扩散带来的热损伤,并引入双层钝化工艺减小表面复合,增加少数载流子的寿命、降低器件的暗电流和盲元率、提高探测器的探测率。
Description
技术领域
本发明涉及红外探测器芯片,具体涉及一种正照射平面型侧向收集结构铟镓砷红外探测器芯片的制备方法。
背景技术
铟镓砷短波红外探测器可以在室温下工作,在民用、军事和航空航天领域具有广泛的应用前景。目前PIN铟镓砷探测器主要分为平面型和台面型两类。台面型器件由于侧面钝化困难,导致器件可靠性降低、暗电流较大,这在很大程度上限制了器件探测率的提高。平面型探测器作为铟镓砷探测器的主流结构,主要在n-InP/i-InGaAs/n-InP外延材料中采用Zn高温扩散的方法制备器件的PN结区,具有钝化容易、暗电流低、可靠性高等优点,非常适用于航空遥感领域。但此制备工艺在高温扩散的过程中使器件表面容易形成扩散热损伤,另外在后续的热处理过程中Zn及P元素的外扩散,这些因素增加了外延层中的缺陷密度,导致PN结性能变差,这在很大程度上限制了探测器暗电流和盲元率的进一步降低。
发明内容
本发明的目的在于克服现有技术的不足,提供一种基于侧向收集结构的平面型铟镓砷探测器新结构,即通过增加载流子侧向收集区,减少外延材料的扩散热损伤,利用载流子的侧向收集效应达到降低器件的暗电流和盲元率的目的。
上述目的是通过如下技术方案实现的:
一种平面型侧向收集结构铟镓砷红外探测器芯片的制备方法,步骤包括:1)外延材料清洗,2)淀积氮化硅扩散掩膜,3)第一次光刻,4)开扩散窗口,5)光刻胶剥离,6)闭管扩散,7)开管取片,8)第二次光刻,9)生长P电极,10)光刻胶剥离,11)淀积二氧化硅增透膜,12)P电极退火,13)第三次光刻,14)开P电极孔,15)光刻胶剥离,16)第四次光刻,17)加厚P电极,18)光刻胶剥离,19)背面抛光,20)生长N电极,21)划片;其中:步骤4)开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺,ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃;氢氟酸缓冲液配比为体积比HF:NH4F:H2O=3:6:10;步骤6)闭管扩散,采用粉末状Zn3As2作为扩散源,真空度为2~3×10-4Pa,在550℃温度下保持6min。
优选地,步骤2)采用等离子体增强化学气相沉积工艺淀积氮化硅扩散掩膜,衬底温度为330℃,气体流量SiH4:N2=50mL/min:900mL/min。
优选地,步骤9)采用离子束溅射工艺淀积Au用作P电极,真空度为3×10-2Pa,离子束能量为100eV。
优选地,步骤11)采用磁控溅射镀膜工艺淀积二氧化硅增透膜,衬底温度为80℃,RF功率为350~400W。
优选地,步骤17)采用离子束溅射依次淀积Cr、Au用作加厚电极,真空度为3×10- 2Pa,离子束能量为100eV。
通过上述方法可以制备一种平面型侧向收集结构铟镓砷红外探测器芯片,包括N型InP衬底、N型InP层、铟镓砷本征吸收层、N型InP帽层、氮化硅扩散掩膜层、载流子侧向收集扩散阻挡区、PN结区、载流子侧向收集区、P电极、二氧化硅增透层、加厚电极、N电极。首先在N型InP衬底上通过外延方法依次排列生长N型InP层、铟镓砷本征吸收层、N型InP帽层,铟镓砷本征吸收层的厚度为1~3μm,然后在NIN型外延片上淀积氮化硅扩散掩膜层用作扩散掩膜层,同时起到钝化层的作用。通过感应耦合等离子体刻蚀技术(ICP)刻蚀和湿法腐蚀工艺形成矩形的载流子侧向收集扩散阻挡区,数量大于等于2,面阵或者线列排列。在考虑到开扩散窗口时扩散掩膜的侧向钻蚀和闭管扩散时掺杂元素横向扩散的前提下,扩散阻挡区边长尺寸为5~10μm,中心距相同。闭管扩散形成子像元PN结区,PN结为浅结,位于载流子侧向收集的扩散阻挡区以下的未扩散区域作为载流子侧向收集区。在光敏元的四周生长环形的单层Au作为P电极,然后在芯片表面淀积二氧化硅增透层作为芯片的增透膜,同时起到退火阻挡层及钝化层的作用。快速热退火后,通过常规湿法腐蚀工艺打开P电极孔,依次生长Cr、Au用作加厚电极,加厚电极为环形遮盖电极,内围尺寸与整个器件的光敏元大小保持一致以对光敏面进行定义,芯片背面抛光后生长单层Au用作N电极,最后,将芯片涂胶后划片。
本发明的有益效果:
1、本发明制备方法制得的芯片减小了光敏元的扩散区域,可有效地减少扩散带来的热损伤,并引入双层钝化工艺减小表面复合,增加少数载流子的寿命、降低器件的暗电流和盲元率、提高探测器的探测率;
2、本发明制备方法制得的芯片中载流子侧向收集的扩散阻挡区边长尺寸设计为5~10μm,产生在载流子侧向收集区的光生载流子可以被周围的结区有效地收集,光敏元响应均匀。
附图说明
图1为平面型侧向收集结构铟镓砷探测器芯片的俯视图;
图2为平面型侧向收集结构铟镓砷探测器芯片沿加厚电极方向并经过侧向收集扩散阻挡区的剖面结构示意图;
图3为工艺步骤流程图。
图中:1、N型InP衬底;2、N型InP层;3、铟镓砷本征吸收层;4、N型InP帽层;5、氮化硅扩散掩膜层;6、载流子侧向收集扩散阻挡区;7、PN结区;8、载流子侧向收集区;9、P电极;10、二氧化硅增透层;11、加厚电极;12、N电极。
具体实施方式
下面结合附图具体介绍本发明的技术方案。
图3为本发明平面型侧向收集结构铟镓砷红外探测器芯片的制备方法,步骤包括:
1)外延材料清洗,2)淀积氮化硅扩散掩膜,3)第一次光刻,4)开扩散窗口,5)光刻胶剥离,6)闭管扩散,7)开管取片,8)第二次光刻,9)生长P电极,10)光刻胶剥离,11)淀积二氧化硅增透膜,12)P电极退火,13)第三次光刻,14)开P电极孔,15)光刻胶剥离,16)第四次光刻,17)加厚P电极,18)光刻胶剥离,19)背面抛光,20)生长N电极,21)划片;其中,步骤4)开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺,ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃;氢氟酸缓冲液配比为体积比HF:NH4F:H2O=3:6:10;步骤6)闭管扩散,采用粉末状Zn3As2作为扩散源,真空度为2~3×10-4Pa,在550℃温度下保持6min。
具体制备工艺步骤如下:
1)依次使用三氯甲烷、乙醚、丙酮、乙醇、去离子水清洗外延片,然后氮气吹干;
2)采用等离子体增强化学气相沉积工艺淀积厚度为230nm的氮化硅扩散掩膜层5,衬底温度为330℃,气体流量SiH4:N2=50mL/min:900mL/min;
3)第一次光刻,采用正胶光刻,显影后于85℃热板上烘烤50min;
4)采用ICP干法刻蚀氮化硅扩散掩膜,ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃,然后采用氢氟酸缓冲液在0℃下腐蚀5s,去离子水冲洗,氮气吹干,形成载流子侧向收集扩散阻挡区6;
5)光刻胶剥离,丙酮浮胶,乙醇清洗,氮气吹干;
6)采用粉末状Zn3As2作为扩散源进行闭管扩散,在550℃温度下保持6min,形成PN结区7和载流子侧向收集区8;
7)打开石英管将外延片取出,并依次用三氯甲烷、乙醚、丙酮、乙醇、去离子水清洗外延片,氮气吹干;
8)第二次光刻,采用正胶光刻,显影后于65℃热板上烘烤30min;
9)采用离子束溅射工艺淀积厚度50nm的Au用作P电极9,真空度为3×10-2Pa,离子束能量为100eV;
10)光刻胶剥离,工艺条件与步骤5)相同;
11)采用磁控溅射镀膜工艺淀积厚度为280nm的二氧化硅增透层10,衬底温度为80℃,RF功率为350~400W;
12)在氮气保护气氛下进行快速热退火,温度为450℃,保持时间为10s;
13)第三次光刻,采用正胶光刻,显影后于85℃热板上烘烤50min;
14)采用氢氟酸缓冲液在0℃下腐蚀二氧化硅增透层打开P电极孔,腐蚀条件与步骤4)相同;
15)光刻胶剥离,工艺条件与步骤5)相同;
16)第四次光刻,采用正胶光刻,显影后于65℃热板上烘烤10min;
17)采用离子束溅射依次淀积厚度分别为20nm、400nm的Cr、Au用作加厚电极11,淀积条件与步骤9)相同;
18)光刻胶剥离,工艺条件与步骤5)相同;
19)正面涂光刻胶保护后于65℃热板烘烤30min,然后背面抛光,材料背面减薄20~30μm;
20)采用离子束溅射淀积厚度为400nm的Au用作N电极12,淀积条件与步骤9)相同;
21)划片后使用丙酮、乙醇、去离子水依次清洗,氮气吹干,侧向收集结构器件制作完毕,见附图2,其俯视图如附图1所示:
外延片为采用金属有机化学气相沉积(MOCVD)技术在厚度为300μm,载流子浓度>3×1018cm-3的N型InP衬底1上依次生长厚度为0.5μm的N型InP层2,载流子浓度>2×1018cm-3;厚度为2.5μm的铟镓砷本征吸收层3,载流子浓度5×1016cm-3;厚度为1μm的N型InP帽层4,载流子浓度5×1016cm-3。本实施例的载流子侧向收集扩散阻挡区6为4×4面阵结构,每个阻挡区尺寸均为10×10μm2。
上述实施例的作用仅在于说明本发明的实质性内容,但并不以此限定本发明的保护范围。
Claims (5)
1.一种平面型侧向收集结构铟镓砷红外探测器芯片的制备方法,其特征在于,包括步骤:1)外延材料清洗,2)淀积氮化硅扩散掩膜,3)第一次光刻,4)开扩散窗口,5)光刻胶剥离,6)闭管扩散,7)开管取片,8)第二次光刻,9)生长P电极,10)光刻胶剥离,11)淀积二氧化硅增透膜,12)P电极退火,13)第三次光刻,14)开P电极孔,15)光刻胶剥离,16)第四次光刻,17)加厚P电极,18)光刻胶剥离,19)背面抛光,20)生长N电极,21)划片;其中,步骤4)开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺,ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃;氢氟酸缓冲液配比为体积比HF:NH4F:H2O=3:6:10;步骤6)闭管扩散,采用粉末状Zn3As2作为扩散源,真空度为2~3×10-4Pa,在550℃温度下保持6min。
2.根据权利要求1所述的制备方法,其特征在于:步骤2)采用等离子体增强化学气相沉积工艺淀积氮化硅扩散掩膜,衬底温度为330℃,气体流量SiH4:N2=50mL/min:900mL/min。
3.根据权利要求1所述的制备方法,其特征在于:步骤9)采用离子束溅射工艺淀积Au用作P电极,真空度为3×10-2Pa,离子束能量为100eV。
4.根据权利要求1所述的制备方法,其特征在于:步骤11)采用磁控溅射镀膜工艺淀积二氧化硅增透膜,衬底温度为80℃,RF功率为350~400W。
5.根据权利要求1所述的制备方法,其特征在于:步骤17)采用离子束溅射依次淀积Cr、Au用作加厚电极,真空度为3×10-2Pa,离子束能量为100eV。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610998201.4A CN106409939B (zh) | 2016-11-14 | 2016-11-14 | 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610998201.4A CN106409939B (zh) | 2016-11-14 | 2016-11-14 | 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106409939A CN106409939A (zh) | 2017-02-15 |
CN106409939B true CN106409939B (zh) | 2018-05-15 |
Family
ID=59230683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610998201.4A Expired - Fee Related CN106409939B (zh) | 2016-11-14 | 2016-11-14 | 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106409939B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114695592A (zh) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | 降低太阳能电池裂片损伤的方法、太阳能电池及制备方法 |
CN115165033B (zh) * | 2022-07-06 | 2024-06-14 | 中国民航大学 | 一种机场跑道路面高厚度积水测量装置及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555890B2 (en) * | 2000-05-23 | 2003-04-29 | Sensors Unlimited, Inc. | Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes |
CN102376824A (zh) * | 2011-10-18 | 2012-03-14 | 中国科学院上海技术物理研究所 | 一种台面型铟镓砷探测器制备方法 |
CN102544043A (zh) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | 一种平面型子像元结构铟镓砷红外探测器芯片 |
CN102544222A (zh) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | 一种平面型子像元结构铟镓砷红外探测器芯片制备方法 |
US8299485B2 (en) * | 2008-03-19 | 2012-10-30 | Soitec | Substrates for monolithic optical circuits and electronic circuits |
-
2016
- 2016-11-14 CN CN201610998201.4A patent/CN106409939B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555890B2 (en) * | 2000-05-23 | 2003-04-29 | Sensors Unlimited, Inc. | Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and p-i-n photodiodes |
US8299485B2 (en) * | 2008-03-19 | 2012-10-30 | Soitec | Substrates for monolithic optical circuits and electronic circuits |
CN102376824A (zh) * | 2011-10-18 | 2012-03-14 | 中国科学院上海技术物理研究所 | 一种台面型铟镓砷探测器制备方法 |
CN102544043A (zh) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | 一种平面型子像元结构铟镓砷红外探测器芯片 |
CN102544222A (zh) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | 一种平面型子像元结构铟镓砷红外探测器芯片制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106409939A (zh) | 2017-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101527308B (zh) | 一种平面结构铟镓砷阵列红外探测器 | |
WO2018214870A1 (zh) | 一种异质结太阳能电池的制备方法及异质结太阳能电池 | |
TWI718703B (zh) | 太陽能電池及其製造方法 | |
JP6692797B2 (ja) | 太陽電池及びその製造方法 | |
CA2906462A1 (en) | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation | |
CN109346536A (zh) | 一种接触钝化晶体硅太阳能电池结构及制备方法 | |
CN110190137B (zh) | 一种用于正面接触钝化的双层钝化膜及其制备方法 | |
WO2017049801A1 (zh) | 硅片表面钝化方法及n型双面电池的制作方法 | |
CN102544043B (zh) | 一种平面型子像元结构铟镓砷红外探测器芯片 | |
US8900674B2 (en) | Method of coating a substrate | |
TW201351672A (zh) | 太陽能電池及其製造方法 | |
CN109087965A (zh) | 一种背面钝化的晶体硅太阳能电池及其制备方法 | |
CN103413863A (zh) | 一种延伸波长的平面型铟镓砷红外探测器芯片制备方法 | |
CN111799344A (zh) | 一种柔性砷化镓太阳能电池及其制作方法 | |
CN106409939B (zh) | 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 | |
CN206672951U (zh) | 一种SiC雪崩光电二极管 | |
CN104538463A (zh) | 一种改善表面钝化的平面型铟镓砷光敏芯片及制备方法 | |
CN106328752A (zh) | 一种平面型侧向收集结构铟镓砷红外探测器芯片 | |
CN103258728A (zh) | 硅片刻蚀的方法及太阳能电池片的制作方法 | |
CN102376824B (zh) | 一种台面型铟镓砷探测器制备方法 | |
WO2019007189A1 (zh) | 单面polo电池及其制备方法 | |
CN106328736A (zh) | 一种抗lid黑硅太阳能高效电池及其生产方法 | |
CN104009119A (zh) | 一种p型晶体硅刻槽埋栅电池的制备方法 | |
WO2021042626A1 (zh) | 一种紫外探测器及其制备方法 | |
JP2003152205A (ja) | 光電変換素子及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180515 Termination date: 20181114 |