CN106409939B - 平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 - Google Patents
平面型侧向收集结构铟镓砷红外探测器芯片的制备方法 Download PDFInfo
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Abstract
本发明公开了平面型侧向收集结构铟镓砷红外探测器芯片的制备方法，步骤包括：1)外延材料清洗，2)淀积氮化硅扩散掩膜，3)第一次光刻，4)开扩散窗口，5)光刻胶剥离，6)闭管扩散，7)开管取片，8)第二次光刻，9)生长P电极，10)光刻胶剥离，11)淀积二氧化硅增透膜，12)P电极退火，13)第三次光刻，14)开P电极孔，15)光刻胶剥离，16)第四次光刻，17)加厚P电极，18)光刻胶剥离，19)背面抛光，20)生长N电极，21)划片。本发明制备方法制得的芯片减小了光敏元的扩散区域，可有效地减少扩散带来的热损伤，并引入双层钝化工艺减小表面复合，增加少数载流子的寿命、降低器件的暗电流和盲元率、提高探测器的探测率。
Description
技术领域
本发明涉及红外探测器芯片，具体涉及一种正照射平面型侧向收集结构铟镓砷红外探测器芯片的制备方法。
背景技术
铟镓砷短波红外探测器可以在室温下工作，在民用、军事和航空航天领域具有广泛的应用前景。目前PIN铟镓砷探测器主要分为平面型和台面型两类。台面型器件由于侧面钝化困难，导致器件可靠性降低、暗电流较大，这在很大程度上限制了器件探测率的提高。平面型探测器作为铟镓砷探测器的主流结构，主要在n-InP/i-InGaAs/n-InP外延材料中采用Zn高温扩散的方法制备器件的PN结区，具有钝化容易、暗电流低、可靠性高等优点，非常适用于航空遥感领域。但此制备工艺在高温扩散的过程中使器件表面容易形成扩散热损伤，另外在后续的热处理过程中Zn及P元素的外扩散，这些因素增加了外延层中的缺陷密度，导致PN结性能变差，这在很大程度上限制了探测器暗电流和盲元率的进一步降低。
发明内容
本发明的目的在于克服现有技术的不足，提供一种基于侧向收集结构的平面型铟镓砷探测器新结构，即通过增加载流子侧向收集区，减少外延材料的扩散热损伤，利用载流子的侧向收集效应达到降低器件的暗电流和盲元率的目的。
上述目的是通过如下技术方案实现的：
一种平面型侧向收集结构铟镓砷红外探测器芯片的制备方法，步骤包括：1)外延材料清洗，2)淀积氮化硅扩散掩膜，3)第一次光刻，4)开扩散窗口，5)光刻胶剥离，6)闭管扩散，7)开管取片，8)第二次光刻，9)生长P电极，10)光刻胶剥离，11)淀积二氧化硅增透膜，12)P电极退火，13)第三次光刻，14)开P电极孔，15)光刻胶剥离，16)第四次光刻，17)加厚P电极，18)光刻胶剥离，19)背面抛光，20)生长N电极，21)划片；其中：步骤4)开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺，ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃；氢氟酸缓冲液配比为体积比HF:NH4F:H2O＝3:6:10；步骤6)闭管扩散，采用粉末状Zn3As2作为扩散源，真空度为2～3×10-4Pa，在550℃温度下保持6min。
优选地，步骤2)采用等离子体增强化学气相沉积工艺淀积氮化硅扩散掩膜，衬底温度为330℃，气体流量SiH4:N2＝50mL/min:900mL/min。
优选地，步骤9)采用离子束溅射工艺淀积Au用作P电极，真空度为3×10-2Pa，离子束能量为100eV。
优选地，步骤11)采用磁控溅射镀膜工艺淀积二氧化硅增透膜，衬底温度为80℃，RF功率为350～400W。
优选地，步骤17)采用离子束溅射依次淀积Cr、Au用作加厚电极，真空度为3×10- 2Pa，离子束能量为100eV。
通过上述方法可以制备一种平面型侧向收集结构铟镓砷红外探测器芯片，包括N型InP衬底、N型InP层、铟镓砷本征吸收层、N型InP帽层、氮化硅扩散掩膜层、载流子侧向收集扩散阻挡区、PN结区、载流子侧向收集区、P电极、二氧化硅增透层、加厚电极、N电极。首先在N型InP衬底上通过外延方法依次排列生长N型InP层、铟镓砷本征吸收层、N型InP帽层，铟镓砷本征吸收层的厚度为1～3μm，然后在NIN型外延片上淀积氮化硅扩散掩膜层用作扩散掩膜层，同时起到钝化层的作用。通过感应耦合等离子体刻蚀技术(ICP)刻蚀和湿法腐蚀工艺形成矩形的载流子侧向收集扩散阻挡区，数量大于等于2，面阵或者线列排列。在考虑到开扩散窗口时扩散掩膜的侧向钻蚀和闭管扩散时掺杂元素横向扩散的前提下，扩散阻挡区边长尺寸为5～10μm，中心距相同。闭管扩散形成子像元PN结区，PN结为浅结，位于载流子侧向收集的扩散阻挡区以下的未扩散区域作为载流子侧向收集区。在光敏元的四周生长环形的单层Au作为P电极，然后在芯片表面淀积二氧化硅增透层作为芯片的增透膜，同时起到退火阻挡层及钝化层的作用。快速热退火后，通过常规湿法腐蚀工艺打开P电极孔，依次生长Cr、Au用作加厚电极，加厚电极为环形遮盖电极，内围尺寸与整个器件的光敏元大小保持一致以对光敏面进行定义，芯片背面抛光后生长单层Au用作N电极，最后，将芯片涂胶后划片。
本发明的有益效果：
1、本发明制备方法制得的芯片减小了光敏元的扩散区域，可有效地减少扩散带来的热损伤，并引入双层钝化工艺减小表面复合，增加少数载流子的寿命、降低器件的暗电流和盲元率、提高探测器的探测率；
2、本发明制备方法制得的芯片中载流子侧向收集的扩散阻挡区边长尺寸设计为5～10μm，产生在载流子侧向收集区的光生载流子可以被周围的结区有效地收集，光敏元响应均匀。
附图说明
图1为平面型侧向收集结构铟镓砷探测器芯片的俯视图；
图2为平面型侧向收集结构铟镓砷探测器芯片沿加厚电极方向并经过侧向收集扩散阻挡区的剖面结构示意图；
图3为工艺步骤流程图。
图中：1、N型InP衬底；2、N型InP层；3、铟镓砷本征吸收层；4、N型InP帽层；5、氮化硅扩散掩膜层；6、载流子侧向收集扩散阻挡区；7、PN结区；8、载流子侧向收集区；9、P电极；10、二氧化硅增透层；11、加厚电极；12、N电极。
具体实施方式
下面结合附图具体介绍本发明的技术方案。
图3为本发明平面型侧向收集结构铟镓砷红外探测器芯片的制备方法，步骤包括：
1)外延材料清洗，2)淀积氮化硅扩散掩膜，3)第一次光刻，4)开扩散窗口，5)光刻胶剥离，6)闭管扩散，7)开管取片，8)第二次光刻，9)生长P电极，10)光刻胶剥离，11)淀积二氧化硅增透膜，12)P电极退火，13)第三次光刻，14)开P电极孔，15)光刻胶剥离，16)第四次光刻，17)加厚P电极，18)光刻胶剥离，19)背面抛光，20)生长N电极，21)划片；其中，步骤4)开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺，ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃；氢氟酸缓冲液配比为体积比HF：NH4F：H2O＝3：6：10；步骤6)闭管扩散，采用粉末状Zn3As2作为扩散源，真空度为2～3×10-4Pa，在550℃温度下保持6min。
具体制备工艺步骤如下：
1)依次使用三氯甲烷、乙醚、丙酮、乙醇、去离子水清洗外延片，然后氮气吹干；
2)采用等离子体增强化学气相沉积工艺淀积厚度为230nm的氮化硅扩散掩膜层5，衬底温度为330℃，气体流量SiH4：N2＝50mL/min：900mL/min；
3)第一次光刻，采用正胶光刻，显影后于85℃热板上烘烤50min；
4)采用ICP干法刻蚀氮化硅扩散掩膜，ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃，然后采用氢氟酸缓冲液在0℃下腐蚀5s，去离子水冲洗，氮气吹干，形成载流子侧向收集扩散阻挡区6；
5)光刻胶剥离，丙酮浮胶，乙醇清洗，氮气吹干；
6)采用粉末状Zn3As2作为扩散源进行闭管扩散，在550℃温度下保持6min，形成PN结区7和载流子侧向收集区8；
7)打开石英管将外延片取出，并依次用三氯甲烷、乙醚、丙酮、乙醇、去离子水清洗外延片，氮气吹干；
8)第二次光刻，采用正胶光刻，显影后于65℃热板上烘烤30min；
9)采用离子束溅射工艺淀积厚度50nm的Au用作P电极9，真空度为3×10-2Pa，离子束能量为100eV；
10)光刻胶剥离，工艺条件与步骤5)相同；
11)采用磁控溅射镀膜工艺淀积厚度为280nm的二氧化硅增透层10，衬底温度为80℃，RF功率为350～400W；
12)在氮气保护气氛下进行快速热退火，温度为450℃，保持时间为10s；
13)第三次光刻，采用正胶光刻，显影后于85℃热板上烘烤50min；
14)采用氢氟酸缓冲液在0℃下腐蚀二氧化硅增透层打开P电极孔，腐蚀条件与步骤4)相同；
15)光刻胶剥离，工艺条件与步骤5)相同；
16)第四次光刻，采用正胶光刻，显影后于65℃热板上烘烤10min；
17)采用离子束溅射依次淀积厚度分别为20nm、400nm的Cr、Au用作加厚电极11，淀积条件与步骤9)相同；
18)光刻胶剥离，工艺条件与步骤5)相同；
19)正面涂光刻胶保护后于65℃热板烘烤30min，然后背面抛光，材料背面减薄20～30μm；
20)采用离子束溅射淀积厚度为400nm的Au用作N电极12，淀积条件与步骤9)相同；
21)划片后使用丙酮、乙醇、去离子水依次清洗，氮气吹干，侧向收集结构器件制作完毕，见附图2，其俯视图如附图1所示：
外延片为采用金属有机化学气相沉积(MOCVD)技术在厚度为300μm，载流子浓度>3×1018cm-3的N型InP衬底1上依次生长厚度为0.5μm的N型InP层2，载流子浓度>2×1018cm-3；厚度为2.5μm的铟镓砷本征吸收层3，载流子浓度5×1016cm-3；厚度为1μm的N型InP帽层4，载流子浓度5×1016cm-3。本实施例的载流子侧向收集扩散阻挡区6为4×4面阵结构，每个阻挡区尺寸均为10×10μm2。
上述实施例的作用仅在于说明本发明的实质性内容，但并不以此限定本发明的保护范围。
Claims (5)
1.一种平面型侧向收集结构铟镓砷红外探测器芯片的制备方法，其特征在于，包括步骤：1）外延材料清洗，2）淀积氮化硅扩散掩膜，3）第一次光刻，4）开扩散窗口，5）光刻胶剥离，6）闭管扩散，7）开管取片，8）第二次光刻，9）生长P电极，10）光刻胶剥离，11）淀积二氧化硅增透膜，12）P电极退火，13）第三次光刻，14）开P电极孔，15）光刻胶剥离，16）第四次光刻，17）加厚P电极，18）光刻胶剥离，19）背面抛光，20）生长N电极，21）划片；其中，步骤4）开扩散窗口采用ICP干法刻蚀和氢氟酸缓冲液湿法腐蚀工艺，ICP功率2000W、RF功率40W、SF6气体流量45sccm、腔体压强9.4mTorr、温度5℃；氢氟酸缓冲液配比为体积比HF:NH4F:H2O=3:6:10；步骤6）闭管扩散，采用粉末状Zn3As2作为扩散源，真空度为2~3×10-4Pa，在550℃温度下保持6min。
2.根据权利要求1所述的制备方法，其特征在于：步骤2）采用等离子体增强化学气相沉积工艺淀积氮化硅扩散掩膜，衬底温度为330℃，气体流量SiH4:N2=50mL/min:900mL/min。
3.根据权利要求1所述的制备方法，其特征在于：步骤9）采用离子束溅射工艺淀积Au用作P电极，真空度为3×10-2Pa，离子束能量为100eV。
4.根据权利要求1所述的制备方法，其特征在于：步骤11）采用磁控溅射镀膜工艺淀积二氧化硅增透膜，衬底温度为80℃，RF功率为350~400W。
5.根据权利要求1所述的制备方法，其特征在于：步骤17）采用离子束溅射依次淀积Cr、Au用作加厚电极，真空度为3×10-2Pa，离子束能量为100eV。
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| CN102544043A (zh) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | 一种平面型子像元结构铟镓砷红外探测器芯片 |
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| US8299485B2 (en) * | 2008-03-19 | 2012-10-30 | Soitec | Substrates for monolithic optical circuits and electronic circuits |
| CN102376824A (zh) * | 2011-10-18 | 2012-03-14 | 中国科学院上海技术物理研究所 | 一种台面型铟镓砷探测器制备方法 |
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