CN106409732A - Method using UV to separate wafer and glass - Google Patents
Method using UV to separate wafer and glass Download PDFInfo
- Publication number
- CN106409732A CN106409732A CN201611051648.7A CN201611051648A CN106409732A CN 106409732 A CN106409732 A CN 106409732A CN 201611051648 A CN201611051648 A CN 201611051648A CN 106409732 A CN106409732 A CN 106409732A
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- Prior art keywords
- glass
- wafer
- layer
- bonding
- high temperature
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a method using UV to separate a wafer and glass. The method comprises the steps that a protective layer is arranged on the surface of the glass; the temporary bonding of the glass and the wafer is realized through a bonding adhesive layer, and a wafer back process is completed; a high temperature resistance protective film and a high reflective film on the surface of the glass are eliminated; and a UV dispergation machine is used to separate the glass and the wafer. According to the method used for separating the wafer and the glass, the bonding adhesive layer is processed by 365nm conventional UV light to realize bonding disassembly; yield loss is prevented in the separation process; the output efficiency is greatly improved; the production cost is reduced; and the method can be applied to a mass production process.
Description
Technical field
The present invention relates to microelectronic packaging technology field, particularly a kind of handling process of wafer.
Background technology
With the development of semiconductor technology, electronic device does less and less, integrated level more and more higher, and the function of comprising is increasingly
Many, the overall performance of device is more and more stronger, thus leads to the production of thin device wafers and being processed into for volume production of thin chip
The trend of ultrathin products industry, but because its unstability, therefore drawn interim bonding on this basis and torn bonding technology open.
Interim bonding has following advantage with tearing open to be bonded：First, carry wafer to provide mechanically for thin device wafers
Support protection, thus back process can be carried out by the equipment of normal component wafer fabrication.For ultra thin device
Wafer, it is possible to achieve the PROCESS FOR TREATMENT of device wafers level.Therefore, by being bonded and tearing bonding techniques open temporarily, using device wafers
Every equipment of factory can process thin device wafers, and need not conversion unit again, and be not required to special fixture or device
Wafer cassette.
Interim bonding techniques solve holding and the fragment problems in technical process of thin wafer, but due to wafer separate
When a lot of unstability factors, there is also very big fragment risk in wafer separate.At the detached medium of wafer current
Reason mode has heat treatment, Zonebond and laser to tear the technology modes such as bonding open, but all there is certain defect.Wherein, at heat
Because heating can make, interim bonding body produces certain warpage to reason and certain heat budget considers, therefore cold by a lot of manufacturers
Fall；And Zonebond technology is more popular at present, but a disadvantage is that the pre-soaking time before bonding of tearing open is longer, and waste
More chemical reagent, thus have impact on yield and not enabling volume production；Laser is torn bonding technology open and is now subjected to more concern, but
Equipment cost is higher, and laser energy may be damaged to device wafers, limits the application that laser tears bonding technology open.
Content of the invention
The technical problem to be solved in the invention is to provide one kind to realize wafer method detached with glass, to realize batch
Produce, and no yield loss, improve output efficiency further, reduce production cost.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows.
One kind realizes wafer method detached with glass using UV, specifically includes following steps：
A. deposit a floor height reflectance coating in glass surface, and attach one layer on highly reflecting films and protective effect is formed to glass surface
High temperature resistant protecting film；
B. realize glass using bonding glue-line to be bonded with the interim of wafer, and complete wafer rear technique；
C. high temperature resistant protecting film and the highly reflecting films of glass surface are removed；
D. realize glass using UV dispergation machine to separate with wafer.
Above-mentioned one kind realizes wafer method detached with glass using UV, and highly reflecting films described in step A are metal material
Film, high temperature resistant protecting film is Xanthan gum band.
Above-mentioned one kind realizes wafer method detached with glass using UV, described in step B bonding glue-line be Rotating fields,
Double-layer structure or three-decker.
The bonding glue-line of described three-decker is followed successively by releasing layer, bonded layer and protective layer from bottom to top.
Above-mentioned one kind realizes wafer method detached with glass using UV, and the machine of UV dispergation described in step D is 365nm wavelength
UV dispergation board.
Due to employing above technical scheme, the invention technological progress is as follows.
The present invention is separated with glass for realizing wafer, carries out being bonded the process of glue-line using 365nm routine UV light, from
And realize tearing bonding open, and separation process no yield loss, output efficiency is greatly improved, reduces production cost, be applicable to
In batch production process.
Brief description
Fig. 1 is the schematic diagram that in step A of the present invention, glass surface deposits highly reflecting films and high temperature resistant protecting film；
Fig. 2 is the schematic diagram that in step B of the present invention, glass slide is bonded with device wafers temporarily；
Fig. 3 is the integrated schematic diagram of back process in step B of the present invention；
Fig. 4 is the schematic diagram removing glass surface protective film and highly reflecting films in step C of the present invention；
Fig. 5 is the schematic diagram carrying out UV light irradiation in step D of the present invention in glass surface；
Fig. 6 completes, for the present invention, the thin wafer schematic diagram that wafer is separated with glass and removes bonding glue；
Fig. 7 is the flow chart of the present invention.
Wherein：1. glass, 2. highly reflecting films, 3. high temperature resistant protecting film, 4. it is bonded glue-line, 5. the wiring of front passivator, 6.
Silicon substrate, 7. insulating barrier, 8. backside passivation layer, 9. back side salient point, 10.RDL layer.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in further detail.
In the present invention, glass, as interim bonding slide glass, plays the effect carrying simultaneously protection device wafer.
One kind realizes wafer method detached with glass using UV, realizes tearing open after the process carrying out bonding glue-line using UV light
Bonding, its flow process is as shown in fig. 7, specifically include following steps.
A. deposit a floor height reflectance coating 2 on glass 1 surface, and attach one layer on highly reflecting films 3 and glass surface is formed
The high temperature resistant protecting film 3 of protective effect, as shown in Figure 1.
Highly reflecting films in this step are used for realizing the high reflection characteristic of glass, generally select the highly reflecting films of metal material
Film is naturally it is also possible to be the highly reflecting films of other materials；White light emission can be gone out by highly reflecting films, it is to avoid white light para-linkage glue
Viscosity produces and has an impact.High temperature resistant protecting film is used for glass surface is formed protective effect, generally selects Xanthan gum band.
B. realize glass 1 using bonding glue-line 4 to be bonded with the interim of wafer, and complete wafer rear technique.Wherein, it is bonded
Glue-line is Rotating fields, double-layer structure or three-decker, from three-decker bonding glue-line when, bonding glue-line include under
And on be followed successively by releasing layer, bonded layer and protective layer.
Wafer be bonded with glass after structure as shown in Fig. 2 wafer mainly include silicon substrate 6 and front passivator wiring 5；
The backside structure of wafer is as shown in figure 3, mainly include RDL layer 10, insulating barrier 7, backside passivation layer 8 and back side salient point 9.
C. high temperature resistant protecting film 3 and the highly reflecting films 2 of glass surface are removed, as shown in figure 4, in order to the UV in step D
Light can be irradiated to bonded interface through glassy layer.
D. realize glass using UV dispergation machine to separate with wafer.In this step, the UV light using the transmitting of UV dispergation machine is straight
Connect and irradiate the surface that glass removes high temperature resistant protecting film and highly reflecting films, as shown in Figure 5；After the irradiation of 30s ~ 5min, glue
Film is reduced with the adhesiveness of wafer, and glass is just completely separated with wafer, and the wafer after separating is as shown in Figure 6.
In the present invention, the UV dispergation board of 365nm wavelength selected by UV dispergation machine, it is possible to decrease glass is separated into wafer
This, and reliability is higher.
Claims (5)
1. one kind realizes wafer method detached with glass it is characterised in that specifically including following steps using UV：
A. deposit a floor height reflectance coating in glass surface, and attach one layer on highly reflecting films and protective effect is formed to glass surface
High temperature resistant protecting film；
B. realize glass using bonding glue-line to be bonded with the interim of wafer, and complete wafer rear technique；
C. high temperature resistant protecting film and the highly reflecting films of glass surface are removed；
D. realize glass using UV dispergation machine to separate with wafer.
2. according to claim 1 a kind of realize wafer method detached with glass using UV it is characterised in that step A
Described in highly reflecting films be metallic material film, high temperature resistant protecting film be Xanthan gum band.
3. according to claim 1 a kind of realize wafer method detached with glass using UV it is characterised in that step B
Described in bonding glue-line be Rotating fields, double-layer structure or three-decker.
4. according to claim 3 a kind of realize wafer method detached with glass using UV it is characterised in that described three
The bonding glue-line of Rotating fields is followed successively by releasing layer, bonded layer and protective layer from bottom to top.
5. according to claim 1 a kind of realize wafer method detached with glass using UV it is characterised in that step D
Described in UV dispergation machine be 365nm wavelength UV dispergation board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051648.7A CN106409732B (en) | 2016-11-25 | 2016-11-25 | A method of realizing that wafer is separated with glass using UV |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051648.7A CN106409732B (en) | 2016-11-25 | 2016-11-25 | A method of realizing that wafer is separated with glass using UV |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409732A true CN106409732A (en) | 2017-02-15 |
| CN106409732B CN106409732B (en) | 2019-09-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611051648.7A Active CN106409732B (en) | 2016-11-25 | 2016-11-25 | A method of realizing that wafer is separated with glass using UV |
Country Status (1)
| Country | Link |
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| CN (1) | CN106409732B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611075A (en) * | 2017-09-04 | 2018-01-19 | 华进半导体封装先导技术研发中心有限公司 | A kind of interim bonding structure and interim bonding method |
| CN108466474A (en) * | 2018-05-15 | 2018-08-31 | 江苏微纳激光应用技术研究院有限公司 | The separation method of full fitting screen |
| CN111446151A (en) * | 2020-03-27 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
| CN112908922A (en) * | 2021-01-28 | 2021-06-04 | 蔡德昌 | Bonding and stripping process for reusable transparent hard carrier and wafer to be thinned |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060051935A1 (en) * | 2001-05-02 | 2006-03-09 | Silverbrook Research Pty Ltd | Method of separating MEMS devices from a composite structure |
| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
| CN104718605A (en) * | 2012-10-11 | 2015-06-17 | 国际商业机器公司 | Advanced handler wafer debonding method |
| WO2016071793A1 (en) * | 2014-11-07 | 2016-05-12 | International Business Machines Corporation | Double layer release temporary bond and debond processes and systems |
| CN105659356A (en) * | 2013-08-01 | 2016-06-08 | 国际商业机器公司 | Wafer debonding using mid-wavelength infrared radiation ablation |
-
2016
- 2016-11-25 CN CN201611051648.7A patent/CN106409732B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060051935A1 (en) * | 2001-05-02 | 2006-03-09 | Silverbrook Research Pty Ltd | Method of separating MEMS devices from a composite structure |
| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
| CN104718605A (en) * | 2012-10-11 | 2015-06-17 | 国际商业机器公司 | Advanced handler wafer debonding method |
| CN105659356A (en) * | 2013-08-01 | 2016-06-08 | 国际商业机器公司 | Wafer debonding using mid-wavelength infrared radiation ablation |
| WO2016071793A1 (en) * | 2014-11-07 | 2016-05-12 | International Business Machines Corporation | Double layer release temporary bond and debond processes and systems |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611075A (en) * | 2017-09-04 | 2018-01-19 | 华进半导体封装先导技术研发中心有限公司 | A kind of interim bonding structure and interim bonding method |
| CN108466474A (en) * | 2018-05-15 | 2018-08-31 | 江苏微纳激光应用技术研究院有限公司 | The separation method of full fitting screen |
| CN111446151A (en) * | 2020-03-27 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
| CN112908922A (en) * | 2021-01-28 | 2021-06-04 | 蔡德昌 | Bonding and stripping process for reusable transparent hard carrier and wafer to be thinned |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106409732B (en) | 2019-09-20 |
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