CN106409632A - 一种碳纳米管冷阴极的制备方法 - Google Patents

一种碳纳米管冷阴极的制备方法 Download PDF

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CN106409632A
CN106409632A CN201610477878.3A CN201610477878A CN106409632A CN 106409632 A CN106409632 A CN 106409632A CN 201610477878 A CN201610477878 A CN 201610477878A CN 106409632 A CN106409632 A CN 106409632A
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carbon nanotube
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cold cathode
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乔宪武
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes

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  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

本发明涉及一种平板显示器制作方法，具体涉及一种碳纳米管冷阴极的制备方法。一种碳纳米管冷阴极的制备方法，包括如下步骤：步骤1：将待沉积的柔性导电材料加热至70‑90℃，并且保持恒定温度；步骤2：柔性导电材料表面沉积1‑3μm厚金属薄膜；步骤3：采用CVD法在金属薄膜表面生长碳纳米管；步骤4：将沉积好的阴极材料取出，常温冷却并且封装。褶皱层碳纳米管结构，降低了电磁屏蔽对场发射性能的影响。

Description

一种碳纳米管冷阴极的制备方法
技术领域
本发明涉及一种平板显示器制作方法，具体涉及一种碳纳米管冷阴极的制备方法。
背景技术
碳纳米管是一种非常优良的场发射材料。它具有开启电压低、长径比大、稳定性高的特点，在较低的电压下就可以发射电子，而且长时间经受较大的电流也不容易被破坏，很适合用于平板显示器。
碳纳米管场发射性能主要体现在碳纳米管尖端场发射，碳纳米管尖端密度过大时就会出现电磁场屏蔽现象，导致影响场发射电流密度。改变碳纳米管阵列的整体取向，可以改变碳纳米管尖端电场分布，从而达到场发射显示器高亮度的要求。
场发射显示器的核心部件是冷阴极结构，如何在单位空间内增加碳纳米管冷阴极结构的场发射强度，一直是本领域研究的重点。
发明内容：
本发明是针对上述技术的问题，提出以下发明内容：
一种碳纳米管冷阴极的制备方法，包括如下步骤：
步骤1：将待沉积的柔性导电材料加热至70-90℃，并且保持恒定温度；
步骤2：柔性导电材料表面沉积1-3μm厚金属薄膜；
步骤3：采用CVD法在金属薄膜表面生长碳纳米管；
步骤4：将沉积好的阴极材料取出，常温冷却并且封装。
优选地，柔性导电材料可以选用PDMS。
优选地，阴极材料常温冷却2-5天。
优选地，冷却后的冷阴极材料金属表面呈U型褶皱状屈曲结构，碳纳米管垂直于金属表面生长。
本发明的有益效果：褶皱层碳纳米管结构，增加了单位空间的场发射面积，而且降低了电磁屏蔽对场发射性能的影响。
附图说明
图1碳纳米管冷阴极平面结构
图2碳纳米管冷阴极褶皱结构
具体实施方式
实施例1：将处理好的PDMS3放入真空溅射设备，恒温加热到所需温度70-90℃，PDMS3表面溅射所需金属薄膜2，通过时间控制得到所需薄膜厚度1-3μm。采用CVD法在金属薄膜2表面生长碳纳米管1，催化剂采用铁、钴、镍等纳米颗粒。如图1所示，控制催化剂的阵列及碳纳米管1的密度，同时控制得到所需碳纳米管1高度。
实施例2：将阴极材料常温冷却2-5天，在应力作用下，PDMS3会产生有规律的褶皱，金属薄2膜由于粘附PDMS3表面，也会产生相应的屈曲形变，得到如图2所示的形状效果，同时碳纳米管1垂直所在的金属薄膜2微小平面。
褶皱层碳纳米管结构，增加了单位空间的场发射面积，而且降低了电磁屏蔽对场发射性能的影响。

Claims (4)

1.一种碳纳米管冷阴极的制备方法，包括如下步骤：
步骤1：将待沉积的柔性导电材料加热至70-90℃，并且保持恒定温度；
步骤2：柔性导电材料表面沉积1-3μm厚金属薄膜；
步骤3：采用CVD法在金属薄膜表面生长碳纳米管；
步骤4：将沉积好的阴极材料取出，常温冷却并且封装。
2.根据权利要求1所述一种碳纳米管冷阴极的制备方法，其特征在于：柔性导电材料可以选用PDMS。
3.根据权利要求1所述一种碳纳米管冷阴极的制备方法，其特征在于：阴极材料常温冷却2-5天。
4.根据权利要求1或权利要求3所述一种碳纳米管冷阴极的制备方法，其特征在于：冷却后的冷阴极材料金属表面呈U型褶皱状屈曲结构，碳纳米管垂直于金属表面生长。
CN201610477878.3A 2016-06-21 2016-06-21 一种碳纳米管冷阴极的制备方法 Pending CN106409632A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108233166A (zh) * 2018-02-06 2018-06-29 太原理工大学 基于不同周期pdms褶皱的可调随机激光芯片及制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1585067A (zh) * 2004-06-11 2005-02-23 华东师范大学 一种点阵式纳米碳基薄膜冷阴极的制备方法
US20080030122A1 (en) * 2006-02-22 2008-02-07 Masashi Yamage Electron emitting element, manufacturing method for electron emitting element, and display device having electron emitting element
CN102208350A (zh) * 2011-05-19 2011-10-05 北京大学 一种选择性湿法刻蚀制备内嵌碳纳米管沟槽结构的方法
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1585067A (zh) * 2004-06-11 2005-02-23 华东师范大学 一种点阵式纳米碳基薄膜冷阴极的制备方法
US20080030122A1 (en) * 2006-02-22 2008-02-07 Masashi Yamage Electron emitting element, manufacturing method for electron emitting element, and display device having electron emitting element
CN102208350A (zh) * 2011-05-19 2011-10-05 北京大学 一种选择性湿法刻蚀制备内嵌碳纳米管沟槽结构的方法
CN102324351A (zh) * 2011-09-07 2012-01-18 郑州航空工业管理学院 一种新型碳纳米管场发射冷阴极及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108233166A (zh) * 2018-02-06 2018-06-29 太原理工大学 基于不同周期pdms褶皱的可调随机激光芯片及制备方法
CN108233166B (zh) * 2018-02-06 2020-06-16 太原理工大学 基于不同周期pdms褶皱的可调随机激光芯片及制备方法

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