CN106384758B - 一种防边缘漏电的太阳电池刻边方法 - Google Patents
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Abstract
本发明公开了一种防边缘漏电的太阳电池刻边方法，包括如下步骤：S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置5‑10min，刻蚀浆料和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉；S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；S3：将洗掉刻蚀浆料的硅片放进温度范围为60‑80℃浓度为30％‑50％的KOH抛光液中反应2‑5min，之后用去离子水清洗最后烘干。本发明通过采用只会和PSG/BSG反应的刻蚀浆料，实现了在保证电池两面扩散层完整的前提下，很好地刻蚀掉硅片边缘的扩散层，从而有效地防止电池边缘漏电现象的发生。采用本方法刻边，太阳电池Rsh提升到3000Ω以上，IRev1降至0.2以下，FF提升了0.3％以上，Eta提升了0.1％以上。
Description
技术领域
本发明涉及一种太阳电池刻边的方法，尤其涉及一种防边缘漏电的太阳电池刻边方法，属于太阳电池制造技术领域。
背景技术
硅片在扩散的时候不仅在所需要的某一面形成pn结/高低结(pp+，nn+)，同时也会在硅片的边缘形成pn结/高低结，这个地方的pn结/高低结一定要去除掉或者与需要那面的pn结/高低结隔离开来，才能杜绝电池的边缘漏电。
传统的防边缘漏电采用的是刻边方法，刻边方法一种是用水上漂的方式利用HF/HNO3体系来刻蚀边缘pn结/高低结，还有一种是先用水上漂的方式先去除边缘的PSG/BSG，然后用碱来刻蚀掉边缘pn结/高低结。但是，上述两种方法只能针对只需要单面扩散层的电池，例如常见的普通P型多晶和PERC单晶电池；如果电池两面都需要有扩散层，像N型双面太阳电池，那么以上两种方法必定会破坏电池某一面的扩散层。所以需要一种新的刻边方法，以适用于双面太阳能电池的防边缘漏电。
发明内容
本发明针对现有两种常规刻边方法无法适用于双面太阳电池的技术问题，提供一种防边缘漏电新的刻边方法，针对两面都有扩散层硅片的边缘扩散层，在能保证硅片两面扩散层完整的前提下，可以很好地刻蚀掉硅片四周边缘的扩散层，彻底解决了两面都有扩散层太阳电池边缘漏电的问题。
为此，本发明采用如下技术方案：
一种新的防边缘漏电的太阳电池刻边方法，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置5-10min，刻蚀浆料和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为60-80℃浓度为30％-50％的KOH抛光液中反应2-5min，之后用去离子水清洗最后烘干。
进一步地，所述防边缘漏电的太阳电池刻边方法，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置6-8min；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为65-75℃，浓度为35％-45％的KOH抛光液中反应3-5min，之后用去离子水清洗最后烘干。
进一步地，所述防边缘漏电的太阳电池刻边方法，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置6-7min；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为68-75℃，浓度为38％-45％的KOH抛光液中反应3-5min，之后用去离子水清洗最后烘干。
本发明的有益效果：
本发明使用了只会刻蚀PSG/BSG的刻蚀浆料来去掉扩散后硅片四周边缘的PSG/BSG，所以在后续与碱反应过程中只有硅片四周边缘的pn结/高低结就被刻蚀掉，实现了在保证电池两面扩散层完整的前提下，很好地刻蚀掉硅片四周边缘的扩散层，从而有效地防止电池边缘漏电现象的发生。采用本方法刻边，太阳电池Rsh提升到3000Ω以上，IRev1降至0.2以下，FF提升了0.3％以上，Eta提升了0.1％以上。
具体实施方式
以下实施例对本发明作进一步详细描述。
实施例1：
先用刻蚀浆料均匀涂到扩散后硅片的四周边缘，在空气中静置5min，刻蚀浆料会和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉，然后再用去离子水洗掉涂在硅片边缘的刻蚀浆料；接下来再用碱刻蚀，具体为：将洗掉刻蚀浆料的硅片放进温度范围为65℃，浓度为30％的KOH抛光液中反应5min，之后用去离子水清洗最后烘干。被刻蚀浆料刻蚀掉的地方因为PSG/BSG被去除掉，硅基体彻底裸露出来，与碱一接触就会开始反应，然而硅片其他地方因为都被PSG/BSG覆盖保护，不会被碱刻蚀，所以硅片边缘的pn结/高低结就会被碱刻蚀掉，阻断漏电通道，防止边缘漏电。
实施例2：
先用刻蚀浆料均匀涂到扩散后硅片的四周边缘，在空气中静置10min，刻蚀浆料会和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉，然后再用去离子水洗掉涂在硅片边缘的刻蚀浆料；接下来再用碱刻蚀，具体为：将洗掉刻蚀浆料的硅片放进温度范围为80℃，浓度为48％的KOH抛光液中反应2min，之后用去离子水清洗最后烘干。被刻蚀浆料刻蚀掉的地方因为PSG/BSG被去除掉，硅基体彻底裸露出来，与碱一接触就会开始反应，然而硅片其他地方因为都被PSG/BSG覆盖保护，不会被碱刻蚀，所以硅片边缘的pn结/高低结就会被碱刻蚀掉，阻断漏电通道，防止边缘漏电。
实施例3：
先用刻蚀浆料均匀涂到扩散后硅片的四周边缘，在空气中静置8min，刻蚀浆料会和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉，然后再用去离子水洗掉涂在硅片边缘的刻蚀浆料；接下来再用碱刻蚀，具体为：将洗掉刻蚀浆料的硅片放进温度范围为70℃，浓度为40％的KOH抛光液中反应3min，之后用去离子水清洗最后烘干。被刻蚀浆料刻蚀掉的地方因为PSG/BSG被去除掉，硅基体彻底裸露出来，与碱一接触就会开始反应，然而硅片其他地方因为都被PSG/BSG覆盖保护，不会被碱刻蚀，所以硅片边缘的pn结/高低结就会被碱刻蚀掉，阻断漏电通道，防止边缘漏电。
Claims (3)
1.一种防边缘漏电的太阳电池刻边方法，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置5-10min,刻蚀浆料和与之接触到地方的PSG/BSG反应，并把这个地方的PSG/BSG刻蚀掉；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为60-80℃，浓度为30％-50％的KOH抛光液中反应2-5min，之后用去离子水清洗最后烘干。
2.根据权利要求1所述的防边缘漏电的太阳电池刻边方法，其特征在于，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置6-8min；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为65-75℃，浓度为35％-45％的KOH抛光液中反应3-5min，之后用去离子水清洗最后烘干。
3.根据权利要求1所述的防边缘漏电的太阳电池刻边方法，其特征在于，包括如下步骤：
S1：用刻蚀浆料均匀涂到扩散后硅片的四周边缘，并在空气中静置6-7min；
S2：用去离子水洗掉涂在硅片四周边缘的刻蚀浆料；
S3：将洗掉刻蚀浆料的硅片放进温度范围为68-75℃，浓度为38％-45％的KOH抛光液中反应3-5min，之后用去离子水清洗最后烘干。
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