CN104143589A - 一种太阳能电池的双面扩散方法 - Google Patents
一种太阳能电池的双面扩散方法 Download PDFInfo
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- CN104143589A CN104143589A CN201410376746.2A CN201410376746A CN104143589A CN 104143589 A CN104143589 A CN 104143589A CN 201410376746 A CN201410376746 A CN 201410376746A CN 104143589 A CN104143589 A CN 104143589A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 105
- 235000012431 wafers Nutrition 0.000 claims abstract description 124
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000012535 impurity Substances 0.000 claims abstract description 60
- 239000007788 liquid Substances 0.000 claims description 53
- 239000000126 substance Substances 0.000 claims description 50
- 230000007797 corrosion Effects 0.000 claims description 28
- 238000005260 corrosion Methods 0.000 claims description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 83
- 239000013078 crystal Substances 0.000 description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000009972 noncorrosive effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- -1 preferably Chemical compound 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410376746.2A CN104143589B (zh) | 2014-08-01 | 2014-08-01 | 一种太阳能电池的双面扩散方法 |
Applications Claiming Priority (1)
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CN201410376746.2A CN104143589B (zh) | 2014-08-01 | 2014-08-01 | 一种太阳能电池的双面扩散方法 |
Publications (2)
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CN104143589A true CN104143589A (zh) | 2014-11-12 |
CN104143589B CN104143589B (zh) | 2020-02-14 |
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CN201410376746.2A Active CN104143589B (zh) | 2014-08-01 | 2014-08-01 | 一种太阳能电池的双面扩散方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107425093A (zh) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | 双面电池的掺杂方法 |
JP2018093200A (ja) * | 2016-12-05 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
CN109285772A (zh) * | 2018-07-06 | 2019-01-29 | 横店集团东磁股份有限公司 | 一种多晶硅电池片链式背抛光方法及其装置 |
CN110289213A (zh) * | 2019-05-09 | 2019-09-27 | 江苏格林保尔光伏有限公司 | 一种太阳能电池片的刻蚀方法 |
CN110870082A (zh) * | 2017-07-20 | 2020-03-06 | 国际太阳能研究中心康斯坦茨协会 | 用于制造pert太阳能电池的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011009754A (ja) * | 2010-07-12 | 2011-01-13 | Hitachi Ltd | 太陽電池の製造方法 |
CN102623563A (zh) * | 2012-03-30 | 2012-08-01 | 苏州阿特斯阳光电力科技有限公司 | 一种双面受光型晶体硅太阳电池的制备方法 |
CN103026494A (zh) * | 2010-07-16 | 2013-04-03 | 希拉克电池株式会社 | 具有硼扩散层的硅太阳能电池单元及其制造方法 |
CN103887347A (zh) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | 一种双面p型晶体硅电池结构及其制备方法 |
-
2014
- 2014-08-01 CN CN201410376746.2A patent/CN104143589B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011009754A (ja) * | 2010-07-12 | 2011-01-13 | Hitachi Ltd | 太陽電池の製造方法 |
CN103026494A (zh) * | 2010-07-16 | 2013-04-03 | 希拉克电池株式会社 | 具有硼扩散层的硅太阳能电池单元及其制造方法 |
CN102623563A (zh) * | 2012-03-30 | 2012-08-01 | 苏州阿特斯阳光电力科技有限公司 | 一种双面受光型晶体硅太阳电池的制备方法 |
CN103887347A (zh) * | 2014-03-13 | 2014-06-25 | 中国东方电气集团有限公司 | 一种双面p型晶体硅电池结构及其制备方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107425093A (zh) * | 2016-05-24 | 2017-12-01 | 上海凯世通半导体股份有限公司 | 双面电池的掺杂方法 |
JP2018093200A (ja) * | 2016-12-05 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
JP7182052B2 (ja) | 2016-12-05 | 2022-12-02 | エルジー エレクトロニクス インコーポレイティド | 太陽電池の製造方法 |
CN110870082A (zh) * | 2017-07-20 | 2020-03-06 | 国际太阳能研究中心康斯坦茨协会 | 用于制造pert太阳能电池的方法 |
CN110870082B (zh) * | 2017-07-20 | 2023-08-29 | 国际太阳能研究中心康斯坦茨协会 | 用于制造pert太阳能电池的方法 |
CN109285772A (zh) * | 2018-07-06 | 2019-01-29 | 横店集团东磁股份有限公司 | 一种多晶硅电池片链式背抛光方法及其装置 |
CN110289213A (zh) * | 2019-05-09 | 2019-09-27 | 江苏格林保尔光伏有限公司 | 一种太阳能电池片的刻蚀方法 |
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Publication number | Publication date |
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CN104143589B (zh) | 2020-02-14 |
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Effective date of registration: 20160531 Address after: 101204 Beijing city Pinggu District No. 316 West Industrial Square Applicant after: Beijing Flight Boda Electronics Ltd. Address before: 100016 Jiuxianqiao East Road, Beijing, No. 1, No. Applicant before: Qixinghuachuang Electronic Co., Ltd., Beijing |
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Effective date of registration: 20200131 Address after: 100176 No. 8, Wenchang Avenue, Daxing District economic and Technological Development Zone, Beijing Applicant after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: 101204 Beijing city Pinggu District No. 316 West Industrial Square Applicant before: Beijing Flight Boda Electronics Ltd. |
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