CN106384757A - Method for improving and processing dirty wafer after film plating - Google Patents
Method for improving and processing dirty wafer after film plating Download PDFInfo
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- CN106384757A CN106384757A CN201610749718.XA CN201610749718A CN106384757A CN 106384757 A CN106384757 A CN 106384757A CN 201610749718 A CN201610749718 A CN 201610749718A CN 106384757 A CN106384757 A CN 106384757A
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- etchant solution
- dirty
- pickling
- washing
- treatmentcorrosion science
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012545 processing Methods 0.000 title abstract description 7
- 238000007747 plating Methods 0.000 title abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 39
- 238000005260 corrosion Methods 0.000 claims description 25
- 230000007797 corrosion Effects 0.000 claims description 25
- 238000005406 washing Methods 0.000 claims description 14
- 238000005554 pickling Methods 0.000 claims description 13
- 229920001296 polysiloxane Polymers 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- GLXDVVHUTZTUQK-UHFFFAOYSA-M lithium;hydroxide;hydrate Chemical compound [Li+].O.[OH-] GLXDVVHUTZTUQK-UHFFFAOYSA-M 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 25
- 239000010703 silicon Substances 0.000 abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 238000005530 etching Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- 238000003486 chemical etching Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 239000010408 film Substances 0.000 description 26
- 239000000243 solution Substances 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 208000020442 loss of weight Diseases 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for improving and processing a dirty wafer after film plating, which is characterized in that a chemical etching solution capable of etching silicon is adopted to perform etching processing on a dirty wafer with a silicon nitride film being removed. The method provided by the invention for improving and processing a water hanging dirty wafer after film plating can well solve a problem of re-plated water hanging dirty wafers, thereby greatly reducing the production cost, and improving the appearance quality of solar cells.
Description
Technical field
The invention belongs to field of photovoltaic technology, after more particularly, to a kind of improvement processes plated film, dirty flow process crystal silicon solar is electric
The method in pond.
Background technology
Solar energy is the inexhaustible regenerative resource of the mankind, is also clean energy resource, does not produce any ring
Border is polluted.In the middle of the effectively utilizes of solar energy, sun can solar photovoltaic utilization be research with fastest developing speed in the last few years, most active greatly
Field, is one of project of wherein attracting most attention.For this reason, people develop and develop solaode.Solaode be by
Solar energy is directly translated into electric energy, and will not produce any harmful substance in use, is a kind of environment friendly and pollution-free product
Product.Therefore, solaode gains great popularity in terms of solving the problems, such as energy and environment, has fabulous market prospect.
Make solaode to be mainly based on semi-conducting material, its operation principle is using photoelectric material absorbing light
Can after there is photoelectricity in conversion reaction.In manufacture of solar cells technical process, plated film can effectively reduce solar battery surface
Reflection and improve solaode minority carrier life time, thus improving the transformation efficiency of solaode.At present, crystal silicon solar
Battery typically carries out surface passivation and antireflective using silicon nitride film.
Silicon nitride film has many advantages, such as insulation, corrosion-resistant, antireflective, but can make silicon after cvd nitride silicon thin film
The sightless impurity in piece surface and the dirty exterior quality highlighting, affecting crystal silicon solar batteries.Process this species at present
After the plated film of type, dirty typically adopts making herbs into wool again after striping -- diffusion etc., but a disadvantage is that making herbs into wool cost of idleness, easy shape again
The bad cell piece of Cheng Xin.
Content of the invention
In view of problems of the prior art, it is an object of the invention to provide dirty after a kind of improvement process plated film
Method.Dirty of " the extension water " that the present invention produces after being directed to plated film proposes a kind of practicable method, can reduce production cost,
Improve solaode exterior quality.
For reaching this purpose, the present invention employs the following technical solutions：
A kind of method that improvement processes dirty after plated film is using corrodible chemistry of silicones etchant solution, thin to removing silicon nitride
Dirty after film carries out corrosion treatmentCorrosion Science, reaches and removes the purpose that silicon chip surface hangs water.
The method dirty after plated film being increased after removing silicon nitride film one alkali cleaning, silicon chip surface is removing silicon nitride
After thin film, alkali liquor is reacted with silicon chip surface thus removing the part silicon of silicon chip surface presence and dirty, raising silicon chip surface
Hydrophobicity, reaches " extension water " phenomenon effectively removing silicon chip surface by corrosion.
Preferably, described corrodible chemistry of silicones etchant solution be alkali hydroxide soln, preferably potassium hydroxide,
Sodium hydroxide, Lithium hydrate, more preferably sodium hydroxide.
Preferably, temperature during etchant solution corrosion treatmentCorrosion Science is 10-40 DEG C, for example, 13 DEG C, 18 DEG C, 22 DEG C, 26 DEG C,
33 DEG C, 36 DEG C etc., for example, preferably 20-30 DEG C, more preferably 23-27 DEG C.
Preferably, corrosion rate during etchant solution corrosion treatmentCorrosion Science is 0.001-0.1g/min, for example, 0.008g/
min、0.011g/min、0.015g/min、0.02g/min、0.025g/min、0.032g/min、0.041g/min、0.048g/
Min etc., preferably 0.01-0.03g/min.
Preferably, the time of etchant solution corrosion treatmentCorrosion Science is 2-20s, for example, 4s, 7s, 9s, 12s, 16s, 19s etc.,
It is preferably 5-15s.It is dirty that etching time cannot remove surface less than 2s；Etching time is more than 20s, then have a strong impact on the crystal silicon sun
Can battery efficiency.
Preferably, methods described includes：By remove silicon nitride film after dirty successively experience pickling, washing, can corruption
Erosion chemistry of silicones etchant solution wash, wash, pickling, washing.
Preferably, using HF during described pickling.
Preferably, methods described includes：By remove silicon nitride film after dirty successively experience pickling, washing, can corruption
Erosion chemistry of silicones etchant solution wash, wash, pickling, washing；
Temperature during etchant solution corrosion treatmentCorrosion Science is 23-27 DEG C；Corrosion rate during etchant solution corrosion treatmentCorrosion Science is 0.01-
0.03g/min；The time of etchant solution corrosion treatmentCorrosion Science is 5-15s.
The present invention creatively proposes a kind of method improved and process " extension water " after plated film dirty, can remove again well
The problem of dirty of plated film " extension water ", greatly reduces production cost, improves the exterior quality of solaode.
Brief description
Fig. 1 is the image that unused NaOH corrodes plated film again；
Fig. 2 is the image corroding again plated film with NaOH.
The present invention is described in more detail below.But following examples is only the simple example of the present invention, not generation
Table or restriction the scope of the present invention, protection scope of the present invention is defined by claims.
Specific embodiment
Further illustrate technical scheme below in conjunction with the accompanying drawings and by specific embodiment.
For the present invention is better described, readily appreciate technical scheme, the present invention's is typical but non-limiting
Embodiment is as follows：
Embodiment 1
Experiment flow process be：HF pickling, washing, alkali cleaning, washing, HF pickling, washing, plated film, printing.
Taking NaOH etchant solution as a example, " extension water " dirty after taking 50 plated films, first adopt HF to remove silicon nitride film, then
Washing 1min, takes 25 silicon chips, is 1% with NaOH solution concentration, solution temperature is 25 DEG C, and etching time is 5s, and corrosion terminates
First adopt deionized water rinsing 3 minutes afterwards, be then placed in hydrochloric acid (concentration is 6%), in Fluohydric acid. (concentration is 3%) mixed solution
Soaking and washing 3min, puts into drying baker and dries silicon chip after the completion of cleaning.Gained silicon chip processing procedure is controlled and is shown in Table 1.
Table 1
| Loss of weight | Cleaning front-reflection rate | Cleaning back reflection rate | Sheet resistance increases |
| 0.002g | 20.942 | 21.272 | 12Ω/□ |
Embodiment 2
NaOH solution etching time is 15s, and other processes are in the same manner as in Example 1.Gained silicon chip processing procedure is controlled
It is shown in Table 2.
Table 2
| Loss of weight | Cleaning front-reflection rate | Cleaning back reflection rate | Sheet resistance increases |
| 0.05 | 20.901 | 21.684 | 17Ω/□ |
Comparative example 1
General flow of the prior art is：HF pickling, wash, return making herbs into wool, diffusion, etching, plated film, printing.
Put into hydrochloric acid (concentration is 6%) without 25 silicon chips of NaOH corrosion through 3min, Fluohydric acid. (concentration is 3%) mixes
Close soaking and washing 3min in solution, equally put into drying baker after the completion of cleaning and dry silicon chip, other processes are same as Example 1.
After the completion of drying, the silicon chip of embodiment 1 and comparative example 1 is put into and under identical conditions, carries out plated film, the figure after plated film
Piece is shown in Fig. 1, Fig. 2.
Silicon chip silicon chip surface no " extension water " phenomenon after plated film again from Fig. 1, Fig. 2 as can be seen that after NaOH cleaning,
Silicon chip surface " extension water " phenomenon without NaOH corrosion is serious.
Comparative example 2
NaOH solution etching time is 25s, and other processes are in the same manner as in Example 1.Gained silicon chip processing procedure is controlled
It is shown in Table 2.
Table 3
| Loss of weight | Cleaning front-reflection rate | Cleaning back reflection rate | Sheet resistance increases |
| 0.06g | 20.965 | 21.893 | 20Ω/□ |
To the silicon test electrical performance of cell parameter after embodiment 1,2 and comparative example 1,2 gained plated films, the results are shown in Table 4.
Table 4
| Eta/% | Isc/A | UocV | FF/% | Rs/Ω | Rsh/Ω | IRev2/A | |
| Embodiment 1 | 18.13 | 8.917 | 0.634 | 78.01 | 0.0016 | 38.34 | 0.362 |
| Embodiment 2 | 18.03 | 8.815 | 0.633 | 78.62 | 0.0015 | 26.15 | 0.330 |
| Comparative example 1 | 18.13 | 8.909 | 0.631 | 78.52 | 0.0017 | 30.40 | 0.638 |
| Comparative example 2 | 17.84 | 8.932 | 0.634 | 76.71 | 0.0020 | 54.16 | 0.223 |
As can be seen from Table 4：Through the present invention add caustic corrosion after compared with the comparative example 1 without caustic corrosion crystal silicon
Solar battery efficiency is no decreased obviously.But if aqueous slkali etching time long (as comparative example 2), then loss of weight can be made to increase
Plus, surface matte changes, and PN junction built in field dies down, thus bringing the decline of solar battery efficiency.
Applicant states, the present invention illustrates the detailed construction feature of the present invention by above-described embodiment, but the present invention is simultaneously
It is not limited to above-mentioned detailed construction feature, that is, do not mean that the present invention has to rely on above-mentioned detailed construction feature and could implement.Institute
Belong to those skilled in the art it will be clearly understood that any improvement in the present invention, the equivalence replacement to part selected by the present invention
And the increase of accessory, selection of concrete mode etc., all fall within protection scope of the present invention and open within the scope of.
The preferred embodiment of the present invention described in detail above, but, the present invention is not limited in above-mentioned embodiment
Detail, in the range of the technology design of the present invention, multiple simple variant can be carried out to technical scheme, this
A little simple variant belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned specific embodiment, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the present invention to various can
The compound mode of energy no longer separately illustrates.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as it is without prejudice to this
The thought of invention, it equally should be considered as content disclosed in this invention.
Claims (8)
1. after a kind of improvement processes plated film, the method for dirty is it is characterised in that adopt corrodible chemistry of silicones etchant solution, to removal
Dirty after silicon nitride film carries out corrosion treatmentCorrosion Science.
2. method according to claim 1 is it is characterised in that described corrodible chemistry of silicones etchant solution is alkali metal hydrogen-oxygen
Compound solution, preferably potassium hydroxide, sodium hydroxide, Lithium hydrate, more preferably sodium hydroxide.
3. method according to claim 1 and 2 is it is characterised in that temperature during etchant solution corrosion treatmentCorrosion Science is 10-40
DEG C, preferably 20-30 DEG C, more preferably 23-27 DEG C.
4. the method according to any one of claim 1-3 is it is characterised in that corrosion rate during etchant solution corrosion treatmentCorrosion Science
For 0.002-0.1g/min, preferably 0.01-0.03g/min.
5. the method according to any one of claim 1-4 is it is characterised in that the time of etchant solution corrosion treatmentCorrosion Science is 2-
20s, preferably 5-15s.
6. the method according to any one of claim 1-5 is it is characterised in that methods described includes：Silicon nitride will be gone thin
After film dirty experiences pickling successively, washing, corrodible chemistry of silicones etchant solution are washed, wash, pickling, washing.
7. method according to claim 6 is it is characterised in that using HF during described pickling.
8. the method according to any one of claim 1-7 is it is characterised in that methods described includes：Silicon nitride will be gone thin
After film dirty experiences pickling successively, washing, corrodible chemistry of silicones etchant solution are washed, wash, pickling, washing；
Temperature during etchant solution corrosion treatmentCorrosion Science is 23-27 DEG C；Corrosion rate during etchant solution corrosion treatmentCorrosion Science is 0.01-
0.03g/min；The time of etchant solution corrosion treatmentCorrosion Science is 5-15s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610749718.XA CN106384757A (en) | 2016-08-29 | 2016-08-29 | Method for improving and processing dirty wafer after film plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610749718.XA CN106384757A (en) | 2016-08-29 | 2016-08-29 | Method for improving and processing dirty wafer after film plating |
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| Publication Number | Publication Date |
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| CN106384757A true CN106384757A (en) | 2017-02-08 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531667A (en) * | 2013-10-29 | 2014-01-22 | 海南英利新能源有限公司 | Unqualified solar cell slice processing method |
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
-
2016
- 2016-08-29 CN CN201610749718.XA patent/CN106384757A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531667A (en) * | 2013-10-29 | 2014-01-22 | 海南英利新能源有限公司 | Unqualified solar cell slice processing method |
| CN103887369A (en) * | 2014-03-11 | 2014-06-25 | 衡水英利新能源有限公司 | Reworking method of silicon wafer coating film color shading slices |
| CN104716206A (en) * | 2015-03-23 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Method for improving defective product reworking conversion efficiency after battery is plated with antireflection film |
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Application publication date: 20170208 |