CN106381478A - Air inlet structure of wafer chemical vapor deposition reaction device - Google Patents
Air inlet structure of wafer chemical vapor deposition reaction device Download PDFInfo
- Publication number
- CN106381478A CN106381478A CN201610885351.4A CN201610885351A CN106381478A CN 106381478 A CN106381478 A CN 106381478A CN 201610885351 A CN201610885351 A CN 201610885351A CN 106381478 A CN106381478 A CN 106381478A
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- CN
- China
- Prior art keywords
- cavity
- air inlet
- inlet structure
- vapor deposition
- chemical vapor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to an air inlet structure of a wafer chemical vapor deposition reaction device. The air inlet structure comprises a cavity. An air inlet end and an air outlet end are arranged on the cavity. An inner cavity of the cavity comprises a reaction cavity in the upper portion and a pressure boosting cavity in the lower portion. An air guide pipe is arranged in the reaction cavity. The two ends of the air guide pipe are communicated with the pressure boosting cavity. The pressure boosting cavity is connected with a pressure boosting pump outside the cavity. The air inlet structure is simple and compact. The pressure boosting manner is adopted, the reaction speed is increased, and namely the forming speed of thin films is increased.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to the chemical vapor deposition reaction chamber of wafer.
Background technology
Films Prepared by APCVD refers to insert in reaction chamber by reacting gas, and reacting gas diffuses to the crystalline substance in reaction chamber
Circular surfaces, the reaction zone near crystal column surface reacts formation thin film.The structure design of existing normal pressure chemical reaction chamber
Unreasonable, reacting gas can not uniformly diffuse to crystal column surface, and the uneven film thickness resulting in is even.
Content of the invention
The problems referred to above existing for prior art, applicant is studied and is improved, and provides a kind of wafer chemical gas phase
The air intake structure of deposit reaction unit.
In order to solve the above problems, the present invention adopts following scheme：
A kind of air intake structure of wafer chemical vapor deposition reaction unit, including cavity, cavity is provided with inlet end and goes out
Gas end, the inner chamber of described cavity includes the reaction chamber on top and the booster cavity of bottom, and airway is arranged in described reaction chamber, institute
The two ends stating airway are connected with described booster cavity, and described booster cavity is connected with the booster pump outside cavity.
The method have technical effect that：
The structure of the present invention is simple, compact；Using supercharging mode, improve response speed, that is, improve the shaping speed of thin film.
Brief description
Fig. 1 is the structural representation of the present invention.
In figure：1st, cavity；10th, reaction chamber；11st, booster cavity；2nd, bracing frame；21st, fix bar；22nd, chuck；3rd, airway；
4th, wafer；5th, booster pump；101st, inlet end；102nd, outlet side.
Specific embodiment
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further.
As shown in figure 1, the wafer chemical vapor deposition reaction unit of the present embodiment, including cavity 1, cavity 1 be provided with into
Gas end 101 and outlet side 102, are built-in with airway 3 and the bracing frame 2 for supporting wafer 4, the inner chamber bag of cavity 1 in cavity 1
Include the reaction chamber 10 on top and the booster cavity 11 of bottom, airway 3 and bracing frame 2 are located in reaction chamber 10, and bracing frame 2 includes one
Fix bar 21 and the chuck 22 being installed on fix bar 21 upper end, wafer 4 is installed in chuck 22；Airway 3 is located under wafer 4
Fang Bingyu booster cavity 11 connects, and booster cavity 11 is connected with the booster pump 5 outside cavity 1.The two ends of airway 3 are provided with and booster cavity 11
The joint of connection, the tube wall of airway 3 between two joints is provided with the passage of wafer 4.
During use, reacting gas is directed in reaction chamber 10 by airway 3, starts booster pump 5, in airway 3
Supercharging, improves the air pressure in airway 3, thus improving haptoreaction speed.
Embodiment provided above is the better embodiment of the present invention, is only used for the convenient explanation present invention, not to this
Bright make any pro forma restriction, any those of ordinary skill in the art, if without departing from the carried skill of the present invention
In the range of art feature, using the Equivalent embodiments locally changed done by disclosed technology contents or modify, and
Without departing from the technical characteristic content of the present invention, all still fall within the range of the technology of the present invention feature.
Claims (1)
1. a kind of air intake structure of wafer chemical vapor deposition reaction unit, including cavity (1), cavity (1) is provided with inlet end
(101) and outlet side (102) it is characterised in that：The inner chamber of described cavity (1) includes the reaction chamber (10) on top and the increasing of bottom
Pressure chamber (11), airway (3) is arranged in described reaction chamber (10), the two ends of described airway (3) and described booster cavity (11)
Connection, booster pump (5) outward is connected described booster cavity (11) with cavity (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610885351.4A CN106381478A (en) | 2016-10-10 | 2016-10-10 | Air inlet structure of wafer chemical vapor deposition reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610885351.4A CN106381478A (en) | 2016-10-10 | 2016-10-10 | Air inlet structure of wafer chemical vapor deposition reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106381478A true CN106381478A (en) | 2017-02-08 |
Family
ID=57937198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610885351.4A Withdrawn CN106381478A (en) | 2016-10-10 | 2016-10-10 | Air inlet structure of wafer chemical vapor deposition reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106381478A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132780A (en) * | 1991-11-11 | 1993-05-28 | Matsushita Electric Ind Co Ltd | Method for forming thin film and device therefor |
| CN201437552U (en) * | 2009-06-12 | 2010-04-14 | 中芯国际集成电路制造(上海)有限公司 | Gas inlet system |
| CN103194737A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor used in atomic layer deposition device |
| CN203700517U (en) * | 2014-02-26 | 2014-07-09 | 湖南中航超强金刚石膜高科技有限公司 | Multilayer jet type diamond film coating equipment |
-
2016
- 2016-10-10 CN CN201610885351.4A patent/CN106381478A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05132780A (en) * | 1991-11-11 | 1993-05-28 | Matsushita Electric Ind Co Ltd | Method for forming thin film and device therefor |
| CN201437552U (en) * | 2009-06-12 | 2010-04-14 | 中芯国际集成电路制造(上海)有限公司 | Gas inlet system |
| CN103194737A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor used in atomic layer deposition device |
| CN203700517U (en) * | 2014-02-26 | 2014-07-09 | 湖南中航超强金刚石膜高科技有限公司 | Multilayer jet type diamond film coating equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170208 |
|
| WW01 | Invention patent application withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170208 |
|
| WD01 | Invention patent application deemed withdrawn after publication |