CN215479745U - Device for preparing silicon nitride through plasma gas-phase reaction - Google Patents
Device for preparing silicon nitride through plasma gas-phase reaction Download PDFInfo
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- CN215479745U CN215479745U CN202122146293.2U CN202122146293U CN215479745U CN 215479745 U CN215479745 U CN 215479745U CN 202122146293 U CN202122146293 U CN 202122146293U CN 215479745 U CN215479745 U CN 215479745U
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- Prior art keywords
- reaction box
- baffle
- partition plate
- pipe
- reaction
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000010574 gas phase reaction Methods 0.000 title claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 238000005192 partition Methods 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 15
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 abstract description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The utility model relates to the technical field of silicon nitride processing, in particular to a device for preparing silicon nitride through plasma gas-phase reaction, which comprises a reaction box, wherein a first partition plate distributed along the horizontal direction is arranged at the upper section in the reaction box, a liquid inlet pipe is arranged on the side wall of the reaction box and above the first partition plate, an air inlet pipe is arranged on the side wall of the reaction box and below the first partition plate, a discharge pipe is arranged at the bottom end of the reaction box, a submersible pump is arranged on the top surface of the first partition plate, a spray pipe is arranged on the bottom surface of the first partition plate, atomizing nozzles are uniformly arranged on the bottom side of the spray pipe, and the water outlet end of the submersible pump is communicated with the spray pipe through a liquid supply pipeline. The utility model can change the space for chemical reaction by using the movement of the piston plate, thereby improving the concentration of ammonia gas and being beneficial to improving the efficiency of chemical reaction.
Description
Technical Field
The utility model relates to the technical field of silicon nitride processing, in particular to a device for preparing silicon nitride by plasma gas phase reaction.
Background
At present, the plasma gas phase reaction is a common means for preparing silicon nitride, and the principle is that silicon chloride and ammonia gas are used for reaction, and the silicon chloride is reacted to generate silicon nitride, so that the silicon nitride film can be conveniently prepared and used for producing solar panels. In the prior art, utility model with publication number CN207756132U provides a plasma gas phase reaction silicon nitride preparation device, which includes: reaction box, internal circulation device, unloading pipe baffle, get and put structures such as door, in specific use, all let in silicon chloride liquid and ammonia and carry out chemical reaction in the reaction box for production silicon nitride. However, because the contact area between the silicon chloride liquid and the ammonia gas in the device is limited, the production efficiency of preparing the silicon nitride by using the device is not high, and the reaction efficiency is further influenced because the reaction box body is internally provided with air, so that the concentration of the ammonia gas in the reaction box body is low. Therefore, a plasma gas phase reaction silicon nitride preparation device is provided to well solve the above disadvantages.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a device for preparing silicon nitride by plasma gas phase reaction, which is used for solving the problems in the background technology.
The above object of the present invention is achieved by the following technical solutions:
a device for preparing silicon nitride through plasma gas phase reaction comprises a reaction box, wherein a first partition plate distributed along the horizontal direction is arranged at the upper section in the reaction box, a liquid inlet pipe is arranged on the side wall of the reaction box and above the first partition plate, an air inlet pipe is arranged on the side wall of the reaction box and below the first partition plate, a discharge pipe is arranged at the bottom end of the reaction box, a submersible pump is arranged on the top surface of the first partition plate, a spray pipe is arranged on the bottom surface of the first partition plate, atomizing nozzles are uniformly arranged on the bottom side of the spray pipe, and the water outlet end of the submersible pump is communicated with the spray pipe through a liquid supply pipeline; the inside of reaction box just is located the below sliding connection of first baffle and has the piston board of oscilaltion, the bottom surface of piston board is equipped with row material pipe, and arranges and is provided with the solenoid valve on the material pipe.
Preferably, the inside of reaction box and the below that is located the piston board are equipped with the second baffle, run through on the second baffle and seted up the confession arrange the round hole that the material pipe passed, and the bottom surface of second baffle is equipped with the actuating mechanism who is used for controlling the piston board and goes up and down.
Preferably, actuating mechanism includes servo motor, driving gear and rack, servo motor fixes on the bottom surface of second baffle, and servo motor's output shaft and driving gear coaxial coupling, the rack distributes and fixed laminating on the outer wall of arranging the material pipe along vertical direction, the driving gear sets up with the rack meshing.
Preferably, the bottom surface of piston plate is equipped with many guide bars that distribute along vertical direction perpendicularly, the guide bar runs through the second baffle and extends to the below of second baffle, and the outside cover of guide bar is equipped with the spring, the both ends of spring laminate with the bottom surface of piston plate and the top surface of second baffle respectively.
Preferably, an air pump is fixedly arranged on the bottom surface of the first partition plate, an air outlet end of the air pump is connected with a hose, and one end, far away from the air pump, of the hose is fixedly attached to the top surface of the piston plate through a pipe clamp.
Compared with the prior art, the utility model provides a device for preparing silicon nitride by plasma gas phase reaction, which has the following beneficial effects:
1. the utility model can change the space for chemical reaction by using the movement of the piston plate, thereby improving the concentration of ammonia gas and being beneficial to improving the efficiency of chemical reaction;
2. the silicon chloride liquid in the utility model is sprayed out through the atomizing spray head, so that the contact area of the silicon chloride liquid and ammonia gas is fully increased, and the efficiency of producing silicon nitride is improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the structure of a discharge pipe according to the present invention.
In the figure: 1. a reaction box; 2. a first separator; 3. a liquid inlet pipe; 4. an air inlet pipe; 5. a discharge pipe; 6. a submersible pump; 7. a shower pipe; 8. a liquid supply conduit; 9. a piston plate; 10. a discharge pipe; 11. a second separator; 12. a circular hole; 13. a servo motor; 14. a driving gear; 15. a rack; 16. a guide bar; 17. a spring; 18. an air pump; 19. a hose.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example (b): referring to fig. 1, a device for preparing silicon nitride by plasma gas phase reaction comprises a reaction box 1, a first partition plate 2 distributed along the horizontal direction is arranged at the upper section inside the reaction box 1, a liquid inlet pipe 3 is arranged on the side wall of the reaction box 1 and above the first partition plate 2, silicon chloride liquid can be introduced into the reaction box 1 by using the liquid inlet pipe 3, an air inlet pipe 4 is arranged on the side wall of the reaction box 1 and below the first partition plate 2, ammonia gas can be introduced into the reaction box 1 by using the air inlet pipe 4, a discharge pipe 5 is arranged at the bottom end of the reaction box 1, a submersible pump 6 is arranged on the top surface of the first partition plate 2, a spray pipe 7 is arranged on the bottom surface of the first partition plate 2, atomizing nozzles are uniformly arranged on the bottom side of the spray pipe 7, the water outlet end of the submersible pump 6 is communicated with the spray pipe 7 through a liquid supply pipe 8, namely, the submersible pump 6 pumps the silicon chloride liquid inside the reaction box 1 into the spray pipe 7, then spraying out the silicon chloride liquid through an atomizing nozzle; but the inside of reaction box 1 and the below sliding connection who is located first baffle 2 have piston plate 9 of oscilaltion, but the bottom surface of piston plate 9 is equipped with row material pipe 10, and is provided with the solenoid valve on arranging material pipe 10, space between piston plate 9 and the first baffle 2, the space that carries out chemical reaction promptly, the side laminating of piston plate 9 is equipped with sealed rubber ring, and the effect prevents that the liquid of piston plate 9 top from revealing from the inner wall gap of piston plate 9 and reaction box 1.
The fixed air pump 18 that is provided with in bottom surface of first baffle 2, the end of giving vent to anger of air pump 18 is connected with hose 19, and the one end that air pump 18 was kept away from to hose 19 passes through the pipe strap and fixes the laminating on the top surface of piston plate 9, when the top of piston plate 9 accumulates certain silicon chloride liquid, usable air pump 18 lets in surplus ammonia in the silicon chloride liquid, further improves reaction efficiency.
Please refer to fig. 1 and fig. 2, a second partition 11 is disposed inside the reaction box 1 and below the piston plate 9, a circular hole 12 for the discharge pipe 10 to pass through is formed in the second partition 11, a driving mechanism for controlling the piston plate 9 to ascend and descend is disposed on the bottom surface of the second partition 11, the driving mechanism includes a servo motor 13, a driving gear 14 and a rack 15, the servo motor 13 is fixed on the bottom surface of the second partition 11, an output shaft of the servo motor 13 is coaxially connected with the driving gear 14, the rack 15 is distributed along a vertical direction and fixedly attached to an outer wall of the discharge pipe 10, and the driving gear 14 is engaged with the rack 15, so that the piston plate 9 can be controlled to ascend and descend by the servo motor 13. The bottom surface of piston plate 9 is equipped with many guide bars 16 that distribute along vertical direction perpendicularly, guide bar 16 runs through second baffle 11 and extends to the below of second baffle 11, and the outside cover of guide bar 16 is equipped with spring 17, the both ends of spring 17 laminate with the bottom surface of piston plate 9 and the top surface of second baffle 11 respectively, the effect of guide bar 16 is the stability that improves piston plate 9, avoid guide bar 16 to produce the slope, in addition, spring 17's natural length is greater than the interval of first baffle 2 and second baffle 11, consequently, when piston plate 9 does not receive system's external force, the interval of piston plate 9 and first baffle 2 is the minimum.
In conclusion, in the using process of the utility model, firstly, the silicon chloride liquid is introduced into the reaction box 1 from the liquid inlet pipe 3, then the ammonia gas is introduced into the reaction box 1 from the gas inlet pipe 4, and the piston plate 9 is gradually lowered along with the gradual increase of the ammonia gas concentration in the reaction box 1; after the silicon chloride liquid and the ammonia gas are conveyed, starting the submersible pump 6, pumping the silicon chloride liquid into the spray pipe 7 by using the submersible pump 6, and then spraying out by the atomizing nozzle at the bottom side of the spray pipe 7; when a certain amount of silicon chloride liquid is accumulated above the piston plate 9, the air pump 18 can be started to blow the residual ammonia gas in the reaction box 1 into the silicon chloride liquid, so that the reaction efficiency is further improved, and after the reaction is finished, the electromagnetic valve on the discharge pipe 10 and the valve on the discharge pipe 5 are opened to pour out the residual waste liquid and the silicon nitride product.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a plasma gas phase reaction preparation silicon nitride device, includes reaction box (1), its characterized in that: the reaction device is characterized in that a first partition plate (2) distributed in the horizontal direction is arranged at the upper section in the reaction box (1), a liquid inlet pipe (3) is arranged on the side wall of the reaction box (1) and above the first partition plate (2), an air inlet pipe (4) is arranged on the side wall of the reaction box (1) and below the first partition plate (2), a discharge pipe (5) is arranged at the bottom end of the reaction box (1), a submersible pump (6) is arranged on the top surface of the first partition plate (2), a spray pipe (7) is arranged on the bottom surface of the first partition plate (2), atomizing nozzles are uniformly arranged on the bottom side of the spray pipe (7), and the water outlet end of the submersible pump (6) is communicated with the spray pipe (7) through a liquid supply pipeline (8); the inside of reaction box (1) and the below sliding connection that is located first baffle (2) have piston plate (9) of oscilaltion, the bottom surface of piston plate (9) is equipped with row material pipe (10), and is provided with the solenoid valve on arranging material pipe (10).
2. The apparatus according to claim 1, wherein: the inside of reaction box (1) and the below that is located piston plate (9) are equipped with second baffle (11), run through on second baffle (11) and seted up the confession arrange round hole (12) that material pipe (10) passed, and the bottom surface of second baffle (11) is equipped with the actuating mechanism who is used for controlling piston plate (9) and goes up and down.
3. The apparatus according to claim 2, wherein: actuating mechanism includes servo motor (13), driving gear (14) and rack (15), servo motor (13) are fixed on the bottom surface of second baffle (11), and the output shaft and driving gear (14) coaxial coupling of servo motor (13), rack (15) distribute and fixed laminating on the outer wall of arranging material pipe (10) along vertical direction, driving gear (14) set up with rack (15) meshing.
4. The apparatus according to claim 2, wherein: the bottom surface of piston board (9) is equipped with many guide bar (16) that distribute along vertical direction perpendicularly, guide bar (16) run through second baffle (11) and extend to the below of second baffle (11), and the outside cover of guide bar (16) is equipped with spring (17), the both ends of spring (17) laminate with the bottom surface of piston board (9) and the top surface of second baffle (11) respectively.
5. The apparatus according to claim 1, wherein: the bottom surface of the first partition plate (2) is fixedly provided with an air suction pump (18), the air outlet end of the air suction pump (18) is connected with a hose (19), and one end, far away from the air suction pump (18), of the hose (19) is fixedly attached to the top surface of the piston plate (9) through a pipe clamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122146293.2U CN215479745U (en) | 2021-09-07 | 2021-09-07 | Device for preparing silicon nitride through plasma gas-phase reaction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122146293.2U CN215479745U (en) | 2021-09-07 | 2021-09-07 | Device for preparing silicon nitride through plasma gas-phase reaction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215479745U true CN215479745U (en) | 2022-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122146293.2U Expired - Fee Related CN215479745U (en) | 2021-09-07 | 2021-09-07 | Device for preparing silicon nitride through plasma gas-phase reaction |
Country Status (1)
| Country | Link |
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| CN (1) | CN215479745U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116119627A (en) * | 2023-02-08 | 2023-05-16 | 华瓷聚力(厦门)新材料有限公司 | High alpha phase silicon nitride powder synthesis method |
-
2021
- 2021-09-07 CN CN202122146293.2U patent/CN215479745U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116119627A (en) * | 2023-02-08 | 2023-05-16 | 华瓷聚力(厦门)新材料有限公司 | High alpha phase silicon nitride powder synthesis method |
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|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20220111 |
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| CF01 | Termination of patent right due to non-payment of annual fee |