CN106374855B - A kind of radio-frequency power amplifier module and RF front-end module - Google Patents
A kind of radio-frequency power amplifier module and RF front-end module Download PDFInfo
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- CN106374855B CN106374855B CN201610736340.XA CN201610736340A CN106374855B CN 106374855 B CN106374855 B CN 106374855B CN 201610736340 A CN201610736340 A CN 201610736340A CN 106374855 B CN106374855 B CN 106374855B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Abstract
This application discloses a kind of radio-frequency power amplifier module and RF front-end modules, wherein, the radio-frequency power amplifier module includes: the controller based on SOI technology or CMOS technology, the controller includes substrate and the functional structure positioned at the substrate surface, and the substrate surface has at least one groove；Power amplifier module in the groove, the power amplifier module are connect by the wiring layer again of the controller with the controller；In the groove or the switch module of the substrate surface, the switch module are connect by the wiring layer again of the controller with the controller and power amplifier.The radio-frequency power amplifier module is by way of reducing the line width line-spacing for realizing the pad size and cabling that are electrically connected between the controller, power amplifier module and switch module, the Substrate Area and used bonding line quantity that the pad occupies are reduced, to reduce own cost.
Description
Technical field
This application involves Design of RF Power Amplifier technical fields, amplify more specifically to a kind of radio-frequency power
Device module and RF front-end module.
Background technique
Radio-frequency power amplifier module is an important composition part of RF front-end module, as shown in Figure 1, the radio frequency
Power amplifier module mainly includes controller Controller, switch module Switch, filter module Filter and power
Amplifier module PA；Wherein, the controller Controller, switch module Switch and power amplifier module PA are described
The main composition part of radio-frequency power amplifier, the controller Controller be separately connected the switch module Switch and
The power amplifier module PA, the switch module Switch pass through the filter module Filter and the power amplification
The PA connection of device module.Wherein, the switch module Switch is based primarily upon SOI (Silicon-On-Insulator, insulating substrate
On silicon) technique or GaAs pHEMT technique manufacture；The controller Controller is based primarily upon CMOS
(Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) technique or SOI technology system
It makes；The power amplifier module PA is based primarily upon the manufacture of GaAs technique.The filter segment mainly use discrete inductance and
Capacitor is realized, IPD technique or surface acoustic wave (Surface Acoustic Wave, SAW) or bulk acoustic wave (Bulk can also be based on
Acoustic Resonato, BAW) or film bulk acoustic (Film Bulk Acoustic Resonato, FBAR) realization.
But above-mentioned four modules based on different process are set simultaneously on one piece of substrate, and realize between them
Electrical connection, needs to be arranged on the substrate the pad of substantial amounts, then in substrate by way of bonding line or back-off
Enterprising walking line connection.With realized based on GaAs pHEMT technique the switch module Switch, based on CMOS technology realize
The controller Controller, deposit with the power amplifier module PA that is realized based on GaAs technique and with IPD die form
Filter module for, it is every due to the switch module Switch on the substrate simultaneously when this four chips is set
One switching branches requires at least one rf inputs mouth, two control ports, radio frequency output port and grounding ports,
It needs to manufacture at least 50 pads on the tube core of the switch module Switch；32 control port pads among these need logical
Cross the corresponding weldering that the controller Controller realized based on CMOS technology is connected to by the way of bonding line or back-off
On disk.And due to the limitation of packaging technology, the size of the pad of this 32 control ports is needed at 80 μm of 80 μ m or more, this
Numerous bonding lines that a little pads can occupy a large amount of die area, and connect these pads can make the radio-frequency power amplify
The cost of manufacture of device module is very high.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of radio-frequency power amplifier module and RF front-end module,
Being fabricated to for the radio-frequency power amplifier module is reduced by reducing pad size and used bonding line quantity to realize
This purpose.
To realize the above-mentioned technical purpose, the embodiment of the invention provides following technical solutions:
A kind of radio-frequency power amplifier module, comprising:
Controller based on SOI technology or CMOS technology, the controller include substrate and be located at the substrate surface
Functional structure, the substrate surface have at least one groove；
Power amplifier module in the groove, the power amplifier module pass through the cloth again of the controller
Line layer is connect with the controller；
In the groove or the switch module of the substrate surface, the switch module pass through the controller again
Wiring layer is connect with the controller and power amplifier.
Preferably, be fixed on the top of the module in the groove at the top of the controller in the horizontal direction at a distance from
Difference is less than pre-determined distance.
Preferably, the value range of the pre-determined distance is 20 μm -30 μm, including endpoint value.
Preferably, further includes: filter module；
The filter module includes at least one filter, and passes through the wiring layer again and the switch module and function
The connection of rate amplifier module.
Preferably, the filter module is set in the groove, and the top of the filter module with it is described recessed
The top of slot is in same horizontal line；
The filter is based on IPD technique or surface acoustic wave or bulk acoustic wave or the preparation of film bulk acoustic technique.
Preferably, the filter includes inductance and capacitor；
The inductance realizes that the capacitor is manufactured in the switch module or the function of controller by the wiring layer again
In energy structure.
Preferably, when the switch module is located in the groove, the switch module is based on SOI technology or GaAs
The switch module of pHEMT technique；
When the switch module is located at the substrate surface, the controller is the controller based on SOI technology, described
Switch module is the switch module based on SOI technology.
Preferably, the quantity of the groove is at least three；
The power amplifier module includes low-power mode power amplifier, middle power mode power amplifier and Gao Gong
Rate mode power amplifier；
The low-power mode power amplifier, middle power mode power amplifier and high-power mode power amplifier point
It is not fixed in 3 grooves.
A kind of RF front-end module, the radio-frequency power amplifier mould including at least one as described in above-mentioned any embodiment
Block.
It can be seen from the above technical proposal that the embodiment of the invention provides a kind of radio-frequency power amplifier module and radio frequencies
Front-end module, wherein the radio-frequency power amplifier module passes through in the substrate based on SOI technology or the controller of CMOS technology
At least one groove is arranged in surface, the power amplifier module or switch module is arranged using the groove, then passes through
The wiring layer again realizes the electrical connection between the power amplifier module and switch module.Due to real by wiring layer again
The size of pad required for the electrical connection of existing chip interior less than 40 μm of 40 μ m, much smaller than realized on substrate chip it
Between the pad size that is electrically connected, and using between the cabling of the setting of wiring layer again line width and line-spacing require (less than 15 μm/
15 μm) also much smaller than line width required by the arrangement cabling on substrate and line-spacing requirement.Therefore, the radio-frequency power amplifier mould
Block is by reducing the pad size and cabling realizing and be electrically connected between the controller, power amplifier module and switch module
Line width line-spacing mode, reduce the Substrate Area and used bonding line quantity that the pad occupies, thus
Reduce the cost of the radio-frequency power amplifier module.
And the power amplifier module and switch module each may lie in the substrate surface or groove of the controller
In, it does not need that fixed substrate additionally is arranged, to reduce the thickness of the radio-frequency power amplifier module.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the structural schematic diagram of radio-frequency power amplifier module；
Fig. 2 is a kind of structural schematic diagram for radio-frequency power amplifier module that one embodiment of the application provides；
Fig. 3 is a kind of structural schematic diagram for radio-frequency power amplifier module that the specific embodiment of the application provides；
Fig. 4 is a kind of structural representation for radio-frequency power amplifier module that another specific embodiment of the application provides
Figure；
Fig. 5 is a kind of structural representation for radio-frequency power amplifier module that another specific embodiment of the application provides
Figure；
Fig. 6 is a kind of structural schematic diagram for RF front-end module that the specific embodiment of the application provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present application provides a kind of radio-frequency power amplifier module, as shown in Figure 2, comprising:
Controller based on SOI technology or CMOS technology, the controller include substrate 100 and be located at the substrate
The functional structure (being not shown in attached drawing 2) on 100 surfaces, 100 surface of substrate have at least one groove 200；
Power amplifier module PA, the power amplifier module PA in the groove 200 pass through the control
The wiring layer again (being not shown in attached drawing 2) of device is connect with the controller；
In the groove 200 or the switch module on 100 surface of the substrate (being not shown in attached drawing 2), the switch
Module is connect by the wiring layer again of the controller with the controller and power amplifier module PA.
It should be noted that the functional structure of the controller may include other in addition to substrate 100 of the controller
Structure, in addition, the functional structure of the controller is in addition to including that the controller removes substrate in some embodiments of the present application
It can also include the radio-frequency power driving stage part in the power amplifier module PA, at this other than other structures outside 100
It can not include radio-frequency power driving stage part in the power amplifier module PA in a little embodiments.
Whether the switch module can be located at the production work that 100 surface of substrate depends primarily on the controller
Skill:
When the controller, which is based on SOI technology, to be realized, the switch module can be based on the substrate 100 of the controller
It is prepared by SOI technology；Certain switch module also can be set in the groove 200 on 100 surface of substrate, lead to
Cross the fixed bonding of adhesive realization and the substrate 100.
When the controller, which is based on CMOS technology, to be realized, the switch module may only be set to 100 table of substrate
In the groove 200 in face, the fixed bonding with the substrate 100 is realized by adhesive.But when the switch module is set to
When in the groove 200, manufacture craft can be identical as the controller, can also be different, i.e., the described switch module both may be used
To be prepared by SOI technology, can also be prepared by GaAspHEMT technique.To this and without limitation, specific view is practical by the application
Depending on situation.
The radio-frequency power amplifier module can be based on GaAs HBT technique or GaAs pHETM technique or GaN technique system
It is standby, the application to this and without limitation, specifically depending on actual conditions.
The radio-frequency power amplifier module passes through in 100 table of substrate based on SOI technology or the controller of CMOS technology
At least one groove 200 is arranged in face, the power amplifier module PA or switch module is arranged using the groove 200, so
The electrical connection between the power amplifier module PA and switch module is realized by the wiring layer again afterwards.Due to by again
Wiring layer realizes that the size of pad required for the electrical connection of chip interior less than 40 μm of 40 μ m, is much smaller than real on substrate
The pad size being electrically connected between existing chip, and using between the cabling of the setting of wiring layer again line width and line-spacing want
It asks (less than 15 μm of 15 μ m) also much smaller than arranging line width required by cabling and line-spacing requirement on substrate.Therefore, described to penetrate
Frequency power amplifier module is electrically connected between the realization controller, power amplifier module PA and switch module by reducing
Pad size and cabling line width line-spacing mode, reduce 100 area of the substrate and made that the pad occupies
Bonding line quantity, to reduce the cost of the radio-frequency power amplifier module.
And the power amplifier module PA and switch module each may lie in the controller 100 surface of substrate or
In groove 200, do not need that fixed substrate additionally is arranged, to reduce the thickness of the radio-frequency power amplifier module.
It should also be noted that, the groove 200 can be formed by etching technics, lathe Physical Processing can also be passed through
It is formed, in addition the etching technics includes but is not limited to wet etching or dry etching.The application is to formation 200 institute of groove
The specific technique and without limitation used is specific depending on actual conditions.
In addition the application to the size of the groove 200 also without limitation, need to be fixed therein as long as can accommodate
Module can have certain gap between 200 surrounding of groove and the module being fixed therein, can also not have, but
Gap between fluted 200 surrounding and the module being fixed therein cannot be excessive, occupied to avoid these gaps excessive
100 area of substrate and the cost for increasing the radio-frequency power amplifier module.
On the basis of the above embodiments, in the preferred embodiment of the application, the radio-frequency power amplifier mould
Block can also include filter module；
The filter module includes at least one filter.
The filter module can be realized by the mode outside piece, but it is preferable that the filter module is set to institute
It states in groove 200, and the top of the filter module and the top of the groove 200 are in same horizontal line, pass through institute
Wiring layer is stated again to connect with the switch module and power amplifier module PA；
In the present embodiment, the filter be based on IPD technique or surface acoustic wave (Surface Acoustic Wave,
) or bulk acoustic wave (Bulk Acoustic Resonato, BAW) or film bulk acoustic (Film Bulk Acoustic SAW
Resonato, FBAR) preparation.
On the basis of the above embodiments, in another preferred embodiment of the application, the filter module setting
In 100 surface of substrate and other modules, specifically, in the present embodiment, the filter includes inductance and capacitor；
The inductance realizes that the capacitor is manufactured in the switch module or the function of controller by the wiring layer again
In energy structure.
In the present embodiment, the radio-frequency power amplifier module can also include filter module.
On the basis of the above embodiments, in one embodiment of the application, the module that is fixed in the groove 200
Top and the controller at the top of range difference in the horizontal direction be less than pre-determined distance.
It should be noted that the module being fixed in the groove 200 can be the power amplifier module PA, it can also
To be the switch module, the filter module can also be.
The range difference at the top of the top and the controller of the module in the groove 200 in the horizontal direction will be fixed on
The purpose controlled in pre-determined distance is easy for connecting the controller using the wiring layer again and being fixed in the groove 200
Module, avoid making due to excessive drop connecting the controller using the wiring layer again and be fixed on the groove
Situations such as breaking when module in 200.It is so preferred, be fixed on the top of the module in the groove 200 with it is described
Range difference at the top of controller in the horizontal direction is zero, connects the controller using the wiring layer again in this way and is fixed on
Completely avoided when module in the groove 200 module due to being fixed in the groove 200 top and the control
Existing drop between at the top of device and the risk for leading to broken string.
On the basis of the above embodiments, the application another embodiment provides for a kind of feasible pre-determined distances
Value range, in the present embodiment, the value range of the pre-determined distance is 20 μm -30 μm, including endpoint value.In the application
One embodiment in, the value of the pre-determined distance is 20 μm, in another embodiment of the application, the pre-determined distance
Value be 30 μm.The application to this and without limitation, specifically depending on actual conditions.
The radio-frequency power amplifier module provided in order to better understand the present invention, below will be with several specific realities
Example is applied to be illustrated the radio-frequency power amplifier module.
On the basis of the above embodiments, in the specific embodiment of the application, as shown in figure 3,
Pass through etching technics or Physical Processing side on 100 surface of substrate based on CMOS technology or the controller of SOI technology
Formula forms two grooves 200, and the switch module is based on GaAs pHEMT technique or SOI technology and is formed, and is fixed on wherein one
In a groove 200；The power amplifier module PA is prepared based on GaAs HBT or GaAs pHEMT or GaN technique, and solid
In another groove 200, in fig. 3, the chip including the switch module and the power amplifier module PA
It is indicated with B1 and B2；The top of the switch module and power amplifier module PA and the top of the controller are in same water
In flat height.There is multiple first kind pads and multiple second class pads inside 100 surface of substrate and chip B1, B2,
If Pad1, Pad2, Pad3, Pad4, Pad5, Pad10 and Pad15 in attached drawing 3 are the first kind pad, size is usually
80 80 μm of μ ms, for being drawn by way of bonding line or back-off；Pad6, Pad7, Pad8, Pad9, Pad11 in attached drawing 3,
Pad12, Pad13, Pad14, Pad16, Pad17, Pad18 and Pad19 are the second class pad, and size is usually less than 40 μm
× 40 μm, for realizing the electricity between the power amplifier module PA, switch module and controller by the wiring layer again
Gas connection.Since the size of the pad (the second class pad) of fan-out-type chip-scale package requirement is encapsulated much smaller than bonding line
It is required that pad (first kind pad) size, and realize the cabling of chip interior connection using the wiring layer again
The line width line-spacing for the cabling that line width line-spacing (usually less than 15 μm/15 μm) is required also much smaller than use bonding line, therefore realize core
Piece interconnects occupied bonding pad area and cabling area is minimum, to reduce used in the radio-frequency power amplifier module
100 area of substrate, thereby reduces the cost of the radio-frequency power amplifier module.And it is removed in the radio-frequency power amplifier
Other chips outside controller can realize fixation by way of the groove 200 being fixed in the substrate 100, without
Additional substrate is wanted, to reduce the thickness of the radio-frequency power amplifier module.
The way of realization of the filter module is not defined in the present embodiment, it can be by the substrate
100 surfaces increase the mode of a groove 200, are arranged the filter module, and by the wiring layer again realize with it is described
The connection of power amplifier module PA and switch module.It can also be realized and the power amplifier and switch by piece external square type
The connection of module, in addition in the preferred embodiment of the application, the filter module can also be by the wiring layer again
The inductance of composition and the capacitor being manufactured in the functional structure of the switch module or controller are constituted, it is specific regard actual conditions and
It is fixed.
On the basis of the above embodiments, in another specific embodiment of the application, as shown in Figure 4, wherein substrate
Setting is based on CMOS technology or SOI technology on 100, has other structures and the radio-frequency power of the controller in addition to substrate 100
Driving stage part.Chip B is the radio-frequency power amplifier part for not including radio-frequency power driving stage part.The controller
100 surface of substrate there is a groove 200, chip B is fixed in the groove 200, and the top of chip B and substrate 100
On top device be in same level height.There are multiple first kind pads inside 100 surface of substrate and chip B
It is the first kind pad with multiple second class pads, such as Pad1, Pad2, Pad3, Pad4, Pad5 and Pad10 in attached drawing 4,
Its size is usually 80 μm of 80 μ m, for being drawn by way of bonding line or back-off；Pad6, Pad7, Pad8 in attached drawing 4
It is the second class pad with Pad9, size is usually less than 40 μm of 40 μ m.
The way of realization of the filter module and switch module is not defined in the present embodiment, the switching molding
Block can be fixed in the groove 200 in such a way that 100 surface of substrate increases a groove 200, and by described
Wiring layer realizes the connection with the power amplifier module PA again.In addition, when having other knots of controller in addition to substrate 100
Structure and radio-frequency power driving stage part are when being realized based on SOI technology, and the switch module can also directly be made in described
On substrate 100.
Likewise, the filter module can 100 surface of substrate increase a groove 200 by way of,
The filter module is set, and realizes the company with the power amplifier module PA and switch module by the wiring layer again
It connects.The connection with the power amplifier and switch module can also be realized by piece external square type, in addition at one of the application
In preferred embodiment, inductance and be manufactured in the switch module that the filter module can also be made of the wiring layer again
Or the capacitor in the functional structure of controller is constituted, specifically depending on actual conditions.
On the basis of the above embodiments, in another specific embodiment of the application, as shown in figure 5, in attached drawing 5
In, setting is based on CMOS technology or SOI technology on substrate 100, has other structures and institute of the controller in addition to substrate 100
State radio-frequency power driving stage part.Chip B1, B2 and B3 are the power amplifier module, their material can be GaAs
HBT, GaAs pHEMT or GaN etc..Wherein B1 is low-power mode power amplifier, and B2 is middle power mode power amplifier,
B3 is high-power mode power amplifier；There are three grooves 200 for 100 surface of the substrate tool, for distinguishing fixed chip B1, B2
And B3.The top layer for being put into chip B1, B2 and B3 in the groove 200 has the controller in addition to substrate 100 with described
The top layer of other structures and radio-frequency power driving stage part is in same level height.100 surface of substrate and chip
There is inside B1, B2 and B3 multiple first kind pads and multiple second class pads, as in attached drawing 5 Pad1, Pad2, Pad3,
Pad4, Pad5, Pad10, Pad15, Pad20 and Pad21 are the first kind pad, and size is usually 80 μm of 80 μ m, are used
It is drawn in by way of bonding line or back-off；Pad6, Pad7, Pad8, Pad9, Pad11, Pad12, Pad13 in attached drawing 5,
Pad14, Pad16, Pad17, Pad18 and Pad19 are the second class pad, and size is usually less than 40 μm of 40 μ m.Due to
The size for the pad (the second class pad) that fan-out-type chip-scale package requires is much smaller than the pad that bonding line encapsulation requires
The size of (first kind pad), and the line width line-spacing of the cabling using the realization of the wiring layer again chip interior connection
The line width line-spacing for the cabling that (usually less than 15 μm/15 μm) are required also much smaller than use bonding line, therefore realize that chip interconnects institute
The bonding pad area and cabling area of occupancy are minimum, to reduce substrate 100 used in the radio-frequency power amplifier module
Area thereby reduces the cost of the radio-frequency power amplifier module.And controller is removed in the radio-frequency power amplifier
Other outer chips can realize fixation by way of the groove 200 being fixed in the substrate 100, without additional
Substrate, to reduce the thickness of the radio-frequency power amplifier module.
Correspondingly, the embodiment of the present application also provides a kind of RF front-end modules, including at least one is such as any of the above-described reality
Apply radio-frequency power amplifier module described in example.
On the basis of the above embodiments, in the preferred embodiment of the application, the RF front-end module it is low
Noise amplifier is set in the radio-frequency power amplifier module in the groove of substrate surface.
Specifically, as shown in fig. 6, in figure 6, being provided on substrate 100 based on CMOS technology or SOI technology, being had
Other structures and radio-frequency power driving stage part of the controller in addition to substrate 100.Chip B1 is based on pHETM technique
The low noise amplifier chip, chip B2 be the switch module based on SOI or GaAs pHEMT technique, chip B3 be based on GaAs
The power amplifier module PA of HBT, GaAs pHEMT or GaN technique；There are three grooves 200 for 100 surface of the substrate tool, are used for
Fixed chip B1, B2 and B3 respectively.The top layer for being put into chip B1, B2 and B3 in the groove 200 has the control with described
The top layer of other structures and radio-frequency power driving stage part of the device processed in addition to substrate 100 is in same level height.It is described
There is multiple first kind pads and multiple second class pads inside 100 surface of substrate and chip B1, B2 and B3, in Fig. 6
Pad1, Pad2, Pad3, Pad4, Pad5, Pad10, Pad15, Pad28 and Pad29 are the first kind pad, and size is usual
It is 80 μm of 80 μ m, for being drawn by way of bonding line or back-off；Pad6, Pad7, Pad8, Pad9 in attached drawing 6,
Pad11、Pad12、Pad13、Pad14、Pad16、Pad17、Pad18、Pad19、Pad20、Pad21、Pad22、Pad23、
Pad24, Pad25, Pad26 and Pad27 are the second class pad, and size is usually less than 40 μm of 40 μ m.Due to fan-out-type
The size for the pad (the second class pad) that chip-scale package requires is much smaller than the pad (described that bonding line encapsulation requires
A kind of pad) size, and realize the line width line-spacing of the cabling of chip interior connection (usually less than using the wiring layer again
15 μm/15 μm) also much smaller than the line width line-spacing of the cabling required using bonding line, therefore realize that chip interconnects occupied pad
Area and cabling area are minimum, to reduce 100 area of substrate used in the radio-frequency power amplifier module, and then drop
The low cost of the radio-frequency power amplifier module.And other chips in the radio-frequency power amplifier in addition to controller
Fixation can be realized by way of the groove 200 being fixed in the substrate 100, without additional substrate, thus
Reduce the thickness of the radio-frequency power amplifier module.It certainly, can also be without for external connection in B1, B2 and B3
A kind of pad, only for the second class pad connected inside the RF front-end module, then by based on CMOS or SOI technology
First kind pad is drawn by the way of bonding line or back-off.
In conclusion the embodiment of the present application provides a kind of radio-frequency power amplifier module and RF front-end module, wherein
The radio-frequency power amplifier module by 100 surface of substrate based on SOI technology or the controller of CMOS technology be arranged to
Then a few groove 200 passes through institute so that the power amplifier module PA or switch module is arranged using the groove 200
It states wiring layer again and realizes electrical connection between the power amplifier module PA and switch module.Due to real by wiring layer again
The size of pad required for the electrical connection of existing chip interior less than 40 μm of 40 μ m, much smaller than realized on substrate chip it
Between the pad size that is electrically connected, and using between the cabling of the setting of wiring layer again line width and line-spacing require (less than 15 μm/
15 μm) also much smaller than line width required by the arrangement cabling on substrate and line-spacing requirement.Therefore, the radio-frequency power amplifier mould
Block is by reducing the pad size being electrically connected between the realization controller, power amplifier module PA and switch module and walking
The mode of the line width line-spacing of line reduces 100 area of the substrate and used bonding line quantity that the pad occupies,
To reduce the cost of the radio-frequency power amplifier module.
And the power amplifier module PA and switch module each may lie in the controller 100 surface of substrate or
In groove 200, do not need that fixed substrate additionally is arranged, to reduce the thickness of the radio-frequency power amplifier module.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of radio-frequency power amplifier module characterized by comprising
Controller based on SOI technology or CMOS technology, the controller include substrate and the function positioned at the substrate surface
Energy structure, the substrate surface have at least one groove；
Power amplifier module in the groove, the power amplifier module pass through the wiring layer again of the controller
It is connect with the controller；
In the groove or the switch module of the substrate surface, the switch module are routed again by the controller
Layer is connect with the controller and power amplifier.
2. radio-frequency power amplifier module according to claim 1, which is characterized in that the module being fixed in the groove
Top and the controller at the top of range difference in the horizontal direction be less than pre-determined distance.
3. radio-frequency power amplifier module according to claim 2, which is characterized in that the value range of the pre-determined distance
For 20 μm -30 μm, including endpoint value.
4. radio-frequency power amplifier module according to claim 1, which is characterized in that further include: filter module；
The filter module includes at least one filter, and is put by the wiring layer again with the switch module and power
Big device module connection.
5. radio-frequency power amplifier module according to claim 4, which is characterized in that the filter module is set to institute
It states in groove, and the top of the filter module and the top of the groove are in same horizontal line；
The filter is based on IPD technique or surface acoustic wave or the preparation of bulk acoustic wave technique.
6. radio-frequency power amplifier module according to claim 4, which is characterized in that the filter includes inductance and electricity
Hold；
The inductance realizes that the capacitor is manufactured in the switch module or the function knot of controller by the wiring layer again
In structure.
7. radio-frequency power amplifier module according to claim 1, which is characterized in that described in being located at when the switch module
When in groove, the switch module is the switch module based on SOI technology or GaAs pHEMT technique；
When the switch module is located at the substrate surface, the controller is the controller based on SOI technology, the switch
Module is the switch module based on SOI technology.
8. radio-frequency power amplifier module according to claim 1, which is characterized in that the quantity of the groove is at least 3
It is a；
The power amplifier module includes low-power mode power amplifier, middle power mode power amplifier and high power mould
Formula power amplifier；
The low-power mode power amplifier, middle power mode power amplifier and high-power mode power amplifier are solid respectively
Due in 3 grooves.
9. a kind of RF front-end module, which is characterized in that including at least one such as the described in any item radio frequency function of claim 1-8
Rate amplifier module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610736340.XA CN106374855B (en) | 2016-08-26 | 2016-08-26 | A kind of radio-frequency power amplifier module and RF front-end module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610736340.XA CN106374855B (en) | 2016-08-26 | 2016-08-26 | A kind of radio-frequency power amplifier module and RF front-end module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106374855A CN106374855A (en) | 2017-02-01 |
| CN106374855B true CN106374855B (en) | 2019-06-14 |
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| CN102456612A (en) * | 2010-10-27 | 2012-05-16 | 上海华虹Nec电子有限公司 | Manufacturing method and structure of semiconductor integrated inductor |
| CN103533749A (en) * | 2013-10-31 | 2014-01-22 | 华为技术有限公司 | Circuit board of power amplifier and manufacturing method of circuit board |
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| CN102456612A (en) * | 2010-10-27 | 2012-05-16 | 上海华虹Nec电子有限公司 | Manufacturing method and structure of semiconductor integrated inductor |
| CN103533749A (en) * | 2013-10-31 | 2014-01-22 | 华为技术有限公司 | Circuit board of power amplifier and manufacturing method of circuit board |
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