CN106374855A - Radio frequency power amplifier module and radio frequency front end module - Google Patents
Radio frequency power amplifier module and radio frequency front end module Download PDFInfo
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- CN106374855A CN106374855A CN201610736340.XA CN201610736340A CN106374855A CN 106374855 A CN106374855 A CN 106374855A CN 201610736340 A CN201610736340 A CN 201610736340A CN 106374855 A CN106374855 A CN 106374855A
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- power amplifier
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- amplifier module
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a radio frequency power amplifier module and a radio frequency front end module. The radio frequency power amplifier module comprises a controller based on an SOI (Silicon-On-Insulator) technology or a CMOS (Complementary Metal Oxide Semiconductor) technology, wherein the controller comprises a substrate and a function structure located on the bottom surface of the substrate, and the surface of the substrate is equipped with at least one groove; a power amplifier module located in the groove, wherein the power amplifier module is connected with the controller through a re-wiring layer of the controller; and a switch module located in the groove or on the surface of the substrate, wherein the switch module is connected with the controller and the power amplifier through the re-wiring layer of the controller. According to the radio frequency power amplifier module, in a mode of reducing sizes of bonding pads for realizing electrical connection among the controller, the power amplifier module and the switch module, and the line width and line distance among lines, the area of the substrate occupied by the bonding pads and the number of employed bonding lines are reduced, thereby reducing the cost of the module.
Description
Technical field
The application is related to Design of RF Power Amplifier technical field, more particularly, it relates to a kind of radio-frequency power amplifies
Device module and RF front-end module.
Background technology
Radio-frequency power amplifier module is an important composition part of RF front-end module, as shown in figure 1, described radio frequency
Power amplifier module mainly includes controller controller, switch module switch, filter module filter and power
Amplifier module pa；Wherein, described controller controller, switch module switch and power amplifier module pa are described
The main composition part of radio-frequency power amplifier, described controller controller connect respectively described switch module switch and
Described power amplifier module pa, described switch module switch are by described filter module filter and described power amplification
Device module pa connects.Wherein, described switch module switch is based primarily upon soi (silicon-on-insulator, dielectric substrate
On silicon) technique or gaas phemt technique manufactures；Described controller controller is based primarily upon cmos
(complementary metal oxide semiconductor, complementary metal oxide semiconductors (CMOS)) technique or soi technique system
Make；Described power amplifier module pa is based primarily upon gaas technique manufacture.Described filter segment mainly adopt discrete inductance and
Electric capacity is realized it is also possible to be based on ipd technique or surface acoustic wave (surface acoustic wave, saw) or bulk acoustic wave (bulk
Acoustic resonato, baw) or film bulk acoustic (film bulk acoustic resonato, fbar) realization.
But, above-mentioned four modules based on different process are arranged on one piece of substrate simultaneously, and realize between them
Electrical connection, needs to arrange the pad of substantial amounts on the substrate, then in substrate by way of bonding line or back-off
Enterprising walking line connects.With realized based on gaas phemt technique described switch module switch, based on cmos technique realize
Described controller controller, deposit with the power amplifier module pa that realized based on gaas technique with ipd die form
Filtration module as a example, when this four chips is set simultaneously on the substrate, every due to described switch module switch
One switching branches are required at least one rf inputs mouth, two control ports, radio frequency output port and grounding ports,
Need on the tube core of described switch module switch to manufacture at least 50 pads；32 control port pads among these need logical
Cross the corresponding weldering being connected to the described controller controller realizing based on cmos technique by the way of bonding line or back-off
On disk.And the restriction due to packaging technology, the size of the pad of this 32 control ports needs in more than 80 μm of 80 μ m, this
A little pads can take substantial amounts of die area, and connect numerous bonding lines of these pads described radio-frequency power can be made to amplify
The cost of manufacture of device module is very high.
Content of the invention
For solving above-mentioned technical problem, the invention provides a kind of radio-frequency power amplifier module and RF front-end module,
To realize reducing being fabricated to of described radio-frequency power amplifier module by the bonding line quantity reducing pad size and used
This purpose.
For realizing above-mentioned technical purpose, embodiments provide following technical scheme:
A kind of radio-frequency power amplifier module, comprising:
Based on the controller of soi technique or cmos technique, described controller includes substrate and is located at described substrate surface
Functional structure, described substrate surface has at least one groove；
Power amplifier module in described groove, described power amplifier module passes through the cloth again of described controller
Line layer is connected with described controller；
In described groove or described substrate surface switch module, described switch module pass through described controller again
Wiring layer is connected with described controller and power amplifier.
Preferably, it is fixed on the top of module in described groove and described controller top distance in the horizontal direction
Difference is less than predeterminable range.
Preferably, the span of described predeterminable range is 20 μm -30 μm, including endpoint value.
Preferably, also include: filter module；
Described filter module includes at least one wave filter, and by described wiring layer again and described switch module and work(
Rate amplifier module connects.
Preferably, described filter module is arranged in described groove, and the top of described filter module is recessed with described
The top of groove is in same horizontal line；
Described wave filter is based on ipd technique or surface acoustic wave or bulk acoustic wave or the preparation of film bulk acoustic technique.
Preferably, described wave filter includes inductance and electric capacity；
Described inductance passes through described wiring layer again and realizes, described electric capacity be manufactured in described switch module or controller work(
In energy structure.
Preferably, when described switch module is located in described groove, described switch module is based on soi technique or gaas
The switch module of phemt technique；
When described switch module is located at described substrate surface, described controller is the controller based on soi technique, described
Switch module is the switch module based on soi technique.
Preferably, the quantity of described groove is at least 3；
Described power amplifier module includes low-power mode power amplifier, middle power mode power amplifier and Gao Gong
Rate mode power amplifier；
Described low-power mode power amplifier, middle power mode power amplifier and high-power mode power amplifier divide
It is not fixed in 3 described grooves.
A kind of RF front-end module, including at least one radio-frequency power amplifier mould as described in above-mentioned any embodiment
Block.
From technique scheme as can be seen that embodiments providing a kind of radio-frequency power amplifier module and radio frequency
Front-end module, wherein, described radio-frequency power amplifier module passes through in the substrate based on soi technique or the controller of cmos technique
Surface arranges at least one groove, to arrange described power amplifier module or switch module using described groove, then passes through
Described wiring layer again realizes the electrical connection between described power amplifier module and switch module.Due to real by wiring layer again
The pad required for electrical connection of existing chip internal be smaller in size than 40 μm of 40 μ m, much smaller than realize on substrate chip it
Between electrical connection pad size, and required using the live width between the cabling of the setting of wiring layer again and line-spacing (less than 15 μm/
15 μm) require also much smaller than the live width required by arrangement cabling on substrate and line-spacing.Therefore, described radio-frequency power amplifier mould
Block passes through to reduce realizes the pad size of electrical connection and cabling between described controller, power amplifier module and switch module
Live width line-spacing mode, reduce described Substrate Area and the bonding line quantity being used that described pad takies, thus
Reduce the cost of described radio-frequency power amplifier module.
And described power amplifier module and switch module each may lie in substrate surface or the groove of described controller
In it is not necessary to extra arrange fixing substrate, thus reducing the thickness of described radio-frequency power amplifier module.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
Fig. 1 is the structural representation of radio-frequency power amplifier module；
A kind of structural representation of radio-frequency power amplifier module for an embodiment offer of the application for the Fig. 2；
A kind of structural representation of radio-frequency power amplifier module for a specific embodiment offer of the application for the Fig. 3；
A kind of structural representation of radio-frequency power amplifier module for another specific embodiment offer of the application for the Fig. 4
Figure；
A kind of structural representation of radio-frequency power amplifier module for another specific embodiment offer of the application for the Fig. 5
Figure；
A kind of structural representation of RF front-end module for a specific embodiment offer of the application for the Fig. 6.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The embodiment of the present application provides a kind of radio-frequency power amplifier module, as shown in Figure 2, comprising:
Based on the controller of soi technique or cmos technique, described controller includes substrate 100 and is located at described substrate
The functional structure (not shown in accompanying drawing 2) on 100 surfaces, described substrate 100 surface has at least one groove 200；
Power amplifier module pa in described groove 200, described power amplifier module pa is by described control
The wiring layer again (not shown in accompanying drawing 2) of device is connected with described controller；
In described groove 200 or described substrate 100 surface switch module (not shown in accompanying drawing 2), described switch
Module is connected with described controller and power amplifier module pa by the wiring layer again of described controller.
It should be noted that the functional structure of described controller can include other in addition to substrate 100 of described controller
Structure, in addition, in some embodiments of the present application, the functional structure of described controller removes substrate except including described controller
Beyond other structures outside 100, the radio-frequency power driving stage part in described power amplifier module pa can also be included, at this
In a little embodiments, described radio-frequency power driving stage part in described power amplifier module pa, can not be included.
Whether described switch module may be located at the making work that described substrate 100 surface depends primarily on described controller
Skill:
When described controller is realized based on soi technique, described switch module can substrate 100 based on described controller
It is prepared by soi technique；Certainly described switch module can also be arranged in the groove 200 on described substrate 100 surface, leads to
Cross binding agent and realize the fixed bonding with described substrate 100.
When described controller is realized based on cmos technique, described switch module may only be arranged at described substrate 100 table
In the groove 200 in face, the fixed bonding with described substrate 100 is realized by binding agent.But, when described switch module is arranged at
When in described groove 200, its processing technology can identical from described controller it is also possible to different, that is, described switch module both may be used
To be prepared by soi technique it is also possible to be prepared by gaasphemt technique.The application does not limit to this, specifically regards reality
Depending on situation.
Described radio-frequency power amplifier module can be based on gaas hbt technique or gaas phetm technique or gan technique system
Standby, the application does not limit to this, specifically depending on practical situation.
Described radio-frequency power amplifier module passes through in substrate 100 table based on soi technique or the controller of cmos technique
Face arranges at least one groove 200, to arrange described power amplifier module pa or switch module using described groove 200, so
Afterwards the electrical connection between described power amplifier module pa and switch module is realized by described wiring layer again.Due to by again
What wiring layer realized the pad required for electrical connection of chip internal is smaller in size than 40 μm of 40 μ m, real much smaller than on substrate
The pad size of electrical connection between existing chip, and will using the live width between the cabling of the described setting of wiring layer again and line-spacing
(less than 15 μm of 15 μ m) is asked to require also much smaller than the live width required by arrangement cabling on substrate and line-spacing.Therefore, described penetrate
Frequency power amplifier module realizes electrical connection between described controller, power amplifier module pa and switch module by reduction
Pad size and cabling live width line-spacing mode, reduce described substrate 100 area that described pad takies and made
Bonding line quantity, thus reduce the cost of described radio-frequency power amplifier module.
And described power amplifier module pa and switch module each may lie in described controller substrate 100 surface or
It is not necessary to extra arrange fixing substrate, thus reducing the thickness of described radio-frequency power amplifier module in groove 200.
Also, it should be noted described groove 200 can be formed by etching technics it is also possible to pass through lathe Physical Processing
Formed, in addition described etching technics includes but is not limited to wet etching or dry etching.The application is to described groove 200 institute of formation
Using specific technique do not limit, concrete depending on practical situation.
In addition the application does not also limit to the size of described groove 200, as long as can accommodate what needs were fixed therein
Module, can have certain gap it is also possible to not have between described groove 200 surrounding and the module being fixed therein, but
Gap between fluted 200 surroundings and the module being fixed therein can not be excessive, excessive to avoid these gaps to take
Substrate 100 area and increase the cost of described radio-frequency power amplifier module.
On the basis of above-described embodiment, in a preferred embodiment of the application, described radio-frequency power amplifier mould
Block can also include filter module；
Described filter module includes at least one wave filter.
Described filter module can be realized by way of outside piece, but it is preferable that described filter module is arranged at institute
State in groove 200, and the top of described filter module is in same horizontal line, by institute with the top of described groove 200
State again wiring layer to be connected with described switch module and power amplifier module pa；
In the present embodiment, described wave filter be based on ipd technique or surface acoustic wave (surface acoustic wave,
) or bulk acoustic wave (bulk acoustic resonato, baw) or film bulk acoustic (film bulk acoustic saw
Resonato, fbar) preparation.
On the basis of above-described embodiment, in another preferred embodiment of the application, described filter module setting
In described substrate 100 surface and other modules, specifically, in the present embodiment, described wave filter includes inductance and electric capacity；
Described inductance passes through described wiring layer again and realizes, described electric capacity be manufactured in described switch module or controller work(
In energy structure.
In the present embodiment, described radio-frequency power amplifier module can also include filter module.
On the basis of above-described embodiment, in an embodiment of the application, it is fixed on the module in described groove 200
Top and described controller top range difference in the horizontal direction be less than predeterminable range.
It should be noted that the module being fixed in described groove 200 can be described power amplifier module pa, also may be used
To be described switch module, can also be described filter module.
By the top of the module being fixed in described groove 200 and described controller top range difference in the horizontal direction
The purpose in predeterminable range is controlled to be easy for connecting described controller and being fixed in described groove 200 using described wiring layer again
Module, it is to avoid because excessive drop makes to connect described controller and be fixed on described groove using described wiring layer again
Situations such as during module in 200, broken string occurs.So preferred, be fixed on the top of module in described groove 200 with described
Controller top range difference in the horizontal direction is zero, is so connected described controller and is fixed on using described wiring layer again
Completely avoid during module in described groove 200 due to the top being fixed on the module in described groove 200 and described control
Between device top exist drop and lead to break risk.
On the basis of above-described embodiment, the application another embodiment provides for a kind of feasible described predeterminable range
Span, in the present embodiment, the span of described predeterminable range is 20 μm -30 μm, including endpoint value.In the application
An embodiment in, the value of described predeterminable range is 20 μm, in another embodiment of the application, described predeterminable range
Value be 30 μm.The application does not limit to this, specifically depending on practical situation.
In order to be better understood from the described radio-frequency power amplifier module of present invention offer, below will be with several specific realities
Apply example described radio-frequency power amplifier module is illustrated.
On the basis of above-described embodiment, in a specific embodiment of the application, as shown in figure 3,
Pass through etching technics or Physical Processing side on substrate 100 surface based on cmos technique or the controller of soi technique
Formula forms two grooves 200, and described switch module is based on gaas phemt technique or soi technique is formed, and is fixed on wherein one
In the middle of individual groove 200；Described power amplifier module pa is based on gaas hbt or gaas phemt or the preparation of gan technique, and solid
In the middle of another groove 200, in fig. 3, including the chip of described switch module and described power amplifier module pa
Represented with b1 and b2；The top of described switch module and power amplifier module pa is in same water with the top of described controller
Put down and highly go up.There is inside described substrate 100 surface and chip b1, b2 multiple first kind pads and multiple Equations of The Second Kind pad,
If pad1, pad2, pad3, pad4, pad5, pad10 and the pad15 in accompanying drawing 3 is described first kind pad, its size is typically
80 80 μm of μ m, for being drawn by way of bonding line or back-off；Pad6 in accompanying drawing 3, pad7, pad8, pad9, pad11,
Pad12, pad13, pad14, pad16, pad17, pad18 and pad19 are described Equations of The Second Kind pad, typically smaller than 40 μm of its size
× 40 μm, for realizing the electricity between described power amplifier module pa, switch module and controller by described wiring layer again
Gas connects.Encapsulate because the size of the pad (described Equations of The Second Kind pad) of fan-out-type chip-scale package requirement is much smaller than bonding line
The size of the pad (described first kind pad) requiring, and realize the cabling of chip internal connection using described wiring layer again
Live width line-spacing (typically smaller than 15 μm/15 μm), also much smaller than the live width line-spacing of the cabling requiring using bonding line, therefore realizes core
The shared bonding pad area of piece interconnection and cabling area are minimum, thus reducing what described radio-frequency power amplifier module was used
Substrate 100 area, and then reduce the cost of described radio-frequency power amplifier module.And remove in described radio-frequency power amplifier
Other chips outside controller can be realized fixing by way of being fixed on the groove 200 in described substrate 100, without
Want extra substrate, thus reducing the thickness of described radio-frequency power amplifier module.
The way of realization of described filter module is not defined in the present embodiment, can be by described substrate
100 surfaces increase the mode of grooves 200, arrange described filter module, and by described wiring layer again realize with described
Power amplifier module pa and the connection of switch module.Can also be realized and described power amplifier and switch by piece external square type
The connection of module, in addition in a preferred embodiment of the application, described filter module can also be by described wiring layer again
The inductance constituting and the electric capacity being manufactured in described switch module or the functional structure of controller are constituted, specifically regarding practical situation
Fixed.
On the basis of above-described embodiment, in another specific embodiment of the application, as shown in figure 4, wherein, substrate
On 100, setting is based on cmos technique or soi technique, has other structures in addition to substrate 100 for the controller and described radio-frequency power
Driving stage part.Chip b is the radio-frequency power amplifier part not including described radio-frequency power driving stage part.Described controller
Substrate 100 surface there is a groove 200, chip b is fixed in described groove 200, and the top of chip b and substrate 100
On top device be in same level and highly go up.There are inside described substrate 100 surface and chip b multiple first kind pads
It is described first kind pad with multiple Equations of The Second Kind pads, such as pad1, pad2, pad3, pad4, pad5 and the pad10 in accompanying drawing 4,
Its size is typically 80 μm of 80 μ m, for being drawn by way of bonding line or back-off；Pad6, pad7, pad8 in accompanying drawing 4
It is described Equations of The Second Kind pad with pad9, its size is typically smaller than 40 μm of 40 μ m.
The way of realization of described filter module and switch module is not defined in the present embodiment, described switching molding
Block can be fixed in this groove 200 by way of increasing a groove 200 on described substrate 100 surface, and by described
Wiring layer realizes the connection with described power amplifier module pa again.In addition, working as other knots that there is controller in addition to substrate 100
When structure and described radio-frequency power driving stage part are to be realized based on soi technique, described switch module can also directly be made in described
On substrate 100.
Likewise, described filter module can by described substrate 100 surface increase a groove 200 by way of,
Described filter module is set, and realizes the company with described power amplifier module pa and switch module by described wiring layer again
Connect.Can also be by the connection of the realization of piece external square type and described power amplifier and switch module, in addition at one of the application
In preferred embodiment, inductance that described filter module can also be made up of described wiring layer again and be manufactured in described switch module
Or the electric capacity in the functional structure of controller is constituted, specifically depending on practical situation.
On the basis of above-described embodiment, in another specific embodiment of the application, as shown in figure 5, in accompanying drawing 5
In, setting on substrate 100 is based on cmos technique or soi technique, has other structures in addition to substrate 100 for the described controller and institute
State radio-frequency power driving stage part.Chip b1, b2 and b3 are described power amplifier module, and their material can be gaas
Hbt, gaas phemt or gan etc..Wherein b1 is low-power mode power amplifier, and b2 is middle power mode power amplifier,
B3 is high-power mode power amplifier；Described substrate 100 surface has three grooves 200, for fixed chip b1, b2 respectively
And b3.The top layer of chip b1, b2 and b3 put in described groove 200 has described controller in addition to substrate 100 with described
The top layer of other structures and described radio-frequency power driving stage part is highly gone up in same level.Described substrate 100 surface and chip
There is inside b1, b2 and b3 multiple first kind pads and multiple Equations of The Second Kind pad, pad1 such as in accompanying drawing 5, pad2, pad3,
Pad4, pad5, pad10, pad15, pad20 and pad21 are described first kind pad, and its size is typically 80 μm of 80 μ m, uses
In being drawn by way of bonding line or back-off；Pad6 in accompanying drawing 5, pad7, pad8, pad9, pad11, pad12, pad13,
Pad14, pad16, pad17, pad18 and pad19 are described Equations of The Second Kind pad, and its size is typically smaller than 40 μm of 40 μ m.Due to
The size of the pad (described Equations of The Second Kind pad) that fan-out-type chip-scale package requires is much smaller than the pad that bonding line encapsulation requires
The size of (described first kind pad), and the live width line-spacing of the cabling of chip internal connection is realized using described wiring layer again
(typically smaller than 15 μm/15 μm), also much smaller than the live width line-spacing of the cabling requiring using bonding line, therefore realize chip interconnection institute
The bonding pad area taking and cabling area are minimum, thus reducing the substrate 100 that described radio-frequency power amplifier module is used
Area, and then reduce the cost of described radio-frequency power amplifier module.And remove controller in described radio-frequency power amplifier
Other outer chips can be realized fixing, without extra by way of being fixed on the groove 200 in described substrate 100
Substrate, thus reducing the thickness of described radio-frequency power amplifier module.
Accordingly, the embodiment of the present application additionally provides a kind of RF front-end module, including at least one as any of the above-described reality
Apply the radio-frequency power amplifier module described in example.
On the basis of above-described embodiment, in a preferred embodiment of the application, described RF front-end module low
Noise amplifier is arranged in the groove of substrate surface in described radio-frequency power amplifier module.
Specifically, as shown in fig. 6, in figure 6, substrate 100 is provided with based on cmos technique or soi technique, has
Other structures in addition to substrate 100 for the described controller and described radio-frequency power driving stage part.Chip b1 is based on phetm technique
The low noise amplifier chip, chip b2 is the switch module based on soi or gaas phemt technique, and chip b3 is based on gaas
The power amplifier module pa of hbt, gaas phemt or gan technique；Described substrate 100 surface has three grooves 200, is used for
Fixed chip b1, b2 and b3 respectively.The top layer of chip b1, b2 and b3 put in described groove 200 has described control with described
The top layer of other structures in addition to substrate 100 for the device processed and described radio-frequency power driving stage part is highly gone up in same level.Described
There is multiple first kind pads and multiple Equations of The Second Kind pad, inside substrate 100 surface and chip b1, b2 and b3 in Fig. 6
Pad1, pad2, pad3, pad4, pad5, pad10, pad15, pad28 and pad29 are described first kind pad, and its size is usual
It is 80 μm of 80 μ m, for being drawn by way of bonding line or back-off；Pad6 in accompanying drawing 6, pad7, pad8, pad9,
pad11、pad12、pad13、pad14、pad16、pad17、pad18、pad19、pad20、pad21、pad22、pad23、
Pad24, pad25, pad26 and pad27 are described Equations of The Second Kind pad, and its size is typically smaller than 40 μm of 40 μ m.Due to fan-out-type
The size of the pad (described Equations of The Second Kind pad) that chip-scale package requires is much smaller than the pad (described that bonding line encapsulation requires
One class pad) size, and using described wiring layer again realize chip internal connection cabling live width line-spacing (typically smaller than
15 μm/15 μm) also much smaller than the cabling being required using bonding line live width line-spacing, therefore realize the shared pad of chip interconnection
Area and cabling area are minimum, thus reducing substrate 100 area that described radio-frequency power amplifier module is used, and then drop
The low cost of described radio-frequency power amplifier module.And other chips in addition to controller in described radio-frequency power amplifier
Can realize fixing by way of being fixed on the groove 200 in described substrate 100, without extra substrate, thus
Reduce the thickness of described radio-frequency power amplifier module.Certainly, can also be not used for the of external connection in b1, b2 and b3
One class pad, only for the Equations of The Second Kind pad connecting inside described RF front-end module, then by based on cmos or soi technique
First kind pad is drawn by the way of bonding line or back-off.
In sum, the embodiment of the present application provides a kind of radio-frequency power amplifier module and RF front-end module, wherein,
Described radio-frequency power amplifier module by substrate 100 surface based on soi technique or the controller of cmos technique arrange to
A few groove 200, to arrange described power amplifier module pa or switch module using described groove 200, then passes through institute
State wiring layer again and realize the electrical connection between described power amplifier module pa and switch module.Due to real by wiring layer again
The pad required for electrical connection of existing chip internal be smaller in size than 40 μm of 40 μ m, much smaller than realize on substrate chip it
Between electrical connection pad size, and required using the live width between the cabling of the setting of wiring layer again and line-spacing (less than 15 μm/
15 μm) require also much smaller than the live width required by arrangement cabling on substrate and line-spacing.Therefore, described radio-frequency power amplifier mould
Block passes through to reduce the pad size realizing being electrically connected between described controller, power amplifier module pa and switch module and walks
The mode of the live width line-spacing of line, reduces described substrate 100 area and the bonding line quantity being used that described pad takies,
Thus reducing the cost of described radio-frequency power amplifier module.
And described power amplifier module pa and switch module each may lie in described controller substrate 100 surface or
It is not necessary to extra arrange fixing substrate, thus reducing the thickness of described radio-frequency power amplifier module in groove 200.
In this specification, each embodiment is described by the way of going forward one by one, and what each embodiment stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (9)
1. a kind of radio-frequency power amplifier module is it is characterised in that include:
Based on the controller of soi technique or cmos technique, the work(that described controller includes substrate and is located at described substrate surface
Energy structure, described substrate surface has at least one groove；
Power amplifier module in described groove, described power amplifier module passes through the wiring layer again of described controller
It is connected with described controller；
In described groove or described substrate surface switch module, described switch module passes through the connecting up again of described controller
Layer is connected with described controller and power amplifier.
2. radio-frequency power amplifier module according to claim 1 is it is characterised in that the module that is fixed in described groove
Top and described controller top range difference in the horizontal direction be less than predeterminable range.
3. radio-frequency power amplifier module according to claim 2 is it is characterised in that the span of described predeterminable range
For 20 μm -30 μm, including endpoint value.
4. radio-frequency power amplifier module according to claim 1 is it is characterised in that also include: filter module；
Described filter module includes at least one wave filter, and is put by described wiring layer again and described switch module and power
Big device module connects.
5. radio-frequency power amplifier module according to claim 4 is it is characterised in that described filter module is arranged at institute
State in groove, and the top of described filter module is in same horizontal line with the top of described groove；
Described wave filter is based on ipd technique or surface acoustic wave or bulk acoustic wave or the preparation of film bulk acoustic technique.
6. radio-frequency power amplifier module according to claim 4 is it is characterised in that described wave filter includes inductance and electricity
Hold；
Described inductance passes through described wiring layer again and realizes, and described electric capacity is manufactured in described switch module or the function of controller is tied
In structure.
7. radio-frequency power amplifier module according to claim 1 is it is characterised in that work as described switch module positioned at described
When in groove, described switch module is the switch module based on soi technique or gaas phemt technique；
When described switch module is located at described substrate surface, described controller is the controller based on soi technique, described switch
Module is the switch module based on soi technique.
8. radio-frequency power amplifier module according to claim 1 is it is characterised in that the quantity of described groove is at least 3
Individual；
Described power amplifier module includes low-power mode power amplifier, middle power mode power amplifier and high power mould
Formula power amplifier；
Described low-power mode power amplifier, middle power mode power amplifier and high-power mode power amplifier are solid respectively
In 3 described grooves.
9. a kind of RF front-end module is it is characterised in that include at least one radio frequency work(as described in any one of claim 1-8
Rate amplifier module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610736340.XA CN106374855B (en) | 2016-08-26 | 2016-08-26 | A kind of radio-frequency power amplifier module and RF front-end module |
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| CN110086484A (en) * | 2019-04-28 | 2019-08-02 | 宜确半导体（苏州）有限公司 | Driving device and preparation method thereof and communication equipment |
| US10510694B2 (en) | 2018-04-18 | 2019-12-17 | Analog Devices, Inc. | Radio frequency communication systems |
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