CN106374740A - Boosting circuit with high heat dissipation - Google Patents
Boosting circuit with high heat dissipation Download PDFInfo
- Publication number
- CN106374740A CN106374740A CN201610909572.0A CN201610909572A CN106374740A CN 106374740 A CN106374740 A CN 106374740A CN 201610909572 A CN201610909572 A CN 201610909572A CN 106374740 A CN106374740 A CN 106374740A
- Authority
- CN
- China
- Prior art keywords
- diode
- inductance
- pmos pipe
- bit
- electric capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a boosting circuit with high heat dissipation, relates to a boosting circuit design, and solves the technical problems of low boosting efficiency, difficult heat dissipation and the like existing in the prior art. The boosting circuit mainly comprises a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a first inductor, a second inductor, a third inductor, a first PMOS tube, a second PMOS tube, a first capacitor, a second capacitor and a load, wherein the first inductor, the second inductor, the first diode, the second diode and the third diode form a first boosting module; the third inductor and the second PMOS tube form a second boosting module; the second capacitor and the load form an output module; and the first diode to the fifth diode selectively use high heat-dissipating diodes respectively.
Description
Technical field
The present invention relates to booster circuit design is and in particular to a kind of booster circuit of high radiating.
Background technology
With the fast development of new forms of energy, the distributed generation system with green power supply as primary power source receives much concern.So
And, as the photovoltaic generation of primary power source, the electricity generation system such as fuel cell is different with traditional DC source output characteristics, exists
Output voltage is low and the obvious feature of Voltage Drop.Therefore, the front end in system needs to connect a DC booster converter by newly
The low-voltage that the energy sends raises.In addition, in real work, a lot of clients need when being welded to axial diode on pcb plate
Want clubfoot, will chip both sides pin bending.In Forging Process, the stress of generation can extend to crystal grain by pin to pin
On, cause crystal grain slight damage, lead to its electric property and reliability performance to reduce.So, how could be in low cost, efficiently
Design under conditions of rate and there is the DC converter of high voltage gain just become a highly important problem.
Content of the invention
For above-mentioned prior art, present invention aim at providing a kind of booster circuit of high radiating, solve prior art
There is the technical problems such as low, the radiating difficulty of boosting efficiency.
For reaching above-mentioned purpose, the technical solution used in the present invention is as follows:
A kind of booster circuit of high radiating, includes the first diode, the second diode, the 3rd diode, the four or two pole
Pipe, the 5th diode, the first inductance, the second inductance, the 3rd inductance, a pmos pipe, the 2nd pmos pipe, the first electric capacity, second
Electric capacity and load；Described the first inductance, the second inductance, the first diode, the second diode and the 3rd diode constitute first
Level boost module；The 3rd described inductance and the 2nd pmos pipe constitute second level boost module；The second described electric capacity and load
Constitute output module；First diode to the 5th diode is all from high radiating diode.
In such scheme, the positive pole of described one end of the first inductance, the anode of the first diode and DC source connects；
The anode of the other end of the first inductance, the anode of the second diode and the 3rd diode is connected to a bit；The moon of first diode
Pole, the negative electrode of the second diode and the second inductance connection are in a bit；The negative electrode of the 3rd diode, one end of the second inductance, the 4th
The source electrode of the anode of diode and a pmos pipe is connected to a bit；The negative electrode of the 4th diode, one end of the 3rd inductance and
One end of one electric capacity is connected to a bit；The source electrode of the other end, the anode of the 5th diode and the 2nd pmos pipe of the 3rd inductance is even
It is connected to a bit；The negative electrode of the 5th diode, one end of the second electric capacity and load are connected to a bit；The drain electrode of the first pmos pipe,
The other end of one electric capacity, the drain electrode of the 2nd pmos pipe, the negative pole of the other end of the second electric capacity, load and DC source are connected to one
Point；A described pmos pipe and the 2nd pmos pipe control conducting by the first control signal and the second control signal respectively or cut
Only.
In such scheme, described high radiating diode, including
Two pins, plastic-sealed body and chip, in plastic packaging body, described two pins connect chip to described chip package respectively
Input and outfan stretch that plastic packaging is external it is characterised in that described two pins are in curved in the external part of plastic packaging
Curved, described two pins are 90 degree in the angle of bend of plastic-sealed body exterior section, and the solder side of described two pins is in flat
Shape, described plastic-sealed body and described two pin solder side identical sides are also in flat.
In such scheme, described plastic-sealed body is in that the side of flat is provided with fin.
Compared with prior art, beneficial effects of the present invention:
It is applicable to the application scenario of high voltage gain, solve the gain restricted problem of traditional boost circuit, structure
Simply it is easy to control；Improve the heat sinking function of power device, improve whole efficiency.
Brief description
Fig. 1 is the circuit diagram of the present invention；
Fig. 2 is the present invention high radiating diode structure schematic diagram.
Specific embodiment
All features disclosed in this specification, or disclosed all methods or during step, except mutually exclusive
Feature and/or step beyond, all can combine by any way.
The present invention will be further described below in conjunction with the accompanying drawings:
Embodiment 1
As Fig. 1, the positive pole of described one end of the first inductance l1, the anode of the first diode vd1 and DC source u1 is even
Connect；The anode of the other end of the first inductance l1, the anode of the second diode vd2 and the 3rd diode vd3 is connected to a bit；First
The negative electrode of diode vd1, the negative electrode of the second diode vd2 and the second inductance l2 are connected to a bit；The moon of 3rd diode vd3
Pole, the source electrode of one end, the anode of the 4th diode vd4 and a pmos pipe q1 of the second inductance l2 are connected to a bit；Four or two
One end of the negative electrode of pole pipe vd4, one end of the 3rd inductance l3 and the first electric capacity c1 is connected to a bit；3rd inductance l3's is another
The source electrode of end, the anode of the 5th diode vd0 and the 2nd pmos pipe q2 is connected to a bit；The negative electrode of the 5th diode vd0, second
One end of electric capacity c2 and load r are connected to a bit；The drain electrode of the first pmos pipe q1, the other end of the first electric capacity c1, the 2nd pmos
The drain electrode of pipe q2, the other end of the second electric capacity c2, the negative pole of load r and DC source u1 are connected to a bit；Described first
Pmos pipe q1 and the 2nd pmos pipe q2 controls on or off by the first control signal vt1 and the second control signal vt2 respectively.
As Fig. 2, described two pins 1, plastic-sealed body 3 and chip 2.Described chip 2 is encapsulated in plastic-sealed body 3, and described two
Root pin 1 connects the input of chip 2 and outfan respectively and stretches outside plastic-sealed body 3, and described two pins 1 are external in plastic packaging
3 part is in bending.Described two pins 1 are 90 degree in the angle of bend optimum of plastic-sealed body 3 exterior section.
The solder side of described two pins 1 is in flat, described plastic-sealed body 3 and described two pins 1 solder side identical
Side is also in flat.In order to improve the heat sinking function of high power device, described plastic-sealed body 3 is in that the side of flat is provided with radiating
Piece.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Belong to those skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in, all answer
It is included within the scope of the present invention.
Claims (4)
1. a kind of booster circuit of high radiating it is characterised in that: include the first diode vd1, the second diode vd2, the 3rd
Diode vd3, the 4th diode vd4, the 5th diode vd0, the first inductance l1, the second inductance l2, the 3rd inductance l3, first
Pmos pipe q1, the 2nd pmos pipe q2, the first electric capacity c1, the second electric capacity c2 and load r；Described the first inductance l1, the second inductance
L2, the first diode vd1, the second diode vd2 and the 3rd diode vd3 constitute first order boost module；The 3rd described electricity
Sense l3 and the 2nd pmos pipe q2 constitutes second level boost module；The second described electric capacity c2 and load r constitutes output module；First
Diode vd1 to the 5th diode vd0 is all from high radiating diode.
2. a kind of high radiating according to claim 1 booster circuit it is characterised in that: the one of the first described inductance l1
The positive pole of end, the anode of the first diode vd1 and DC source u1 connects；The other end of the first inductance l1, the second diode vd2
Anode and the anode of the 3rd diode vd3 be connected to a bit；The negative electrode of the first diode vd1, the negative electrode of the second diode vd2
And second inductance l2 be connected to a bit；The negative electrode of the 3rd diode vd3, one end of the second inductance l2, the sun of the 4th diode vd4
The source electrode of pole and a pmos pipe q1 is connected to a bit；The negative electrode of the 4th diode vd4, one end of the 3rd inductance l3 and the first electricity
The one end holding c1 is connected to a bit；The source of the other end, the anode of the 5th diode vd0 and the 2nd pmos pipe q2 of the 3rd inductance l3
Pole is connected to a bit；The negative electrode of the 5th diode vd0, one end of the second electric capacity c2 and load r are connected to a bit；First pmos pipe
The drain electrode of q1, the other end of the first electric capacity c1, the drain electrode of the 2nd pmos pipe q2, the other end of the second electric capacity c2, load r and direct current
The negative pole of power supply u1 is connected to a bit；A described pmos pipe q1 and the 2nd pmos pipe q2 is respectively by the first control signal vt1
Control on or off with the second control signal vt2.
3. a kind of high radiating according to claim 1 and 2 booster circuit it is characterised in that: described high radiating two poles
Pipe, including
Two pins, plastic-sealed body and chip, in plastic packaging body, described two pins connect the defeated of chip to described chip package respectively
Enter end and outfan and stretch plastic packaging in vitro it is characterised in that described two pins are in bending in the external part of plastic packaging,
Described two pins are 90 degree in the angle of bend of plastic-sealed body exterior section, and the solder side of described two pins is in flat, institute
Stating plastic-sealed body with described two pin solder side identical sides is also in flat.
4. a kind of high radiating according to claim 3 booster circuit it is characterised in that: described plastic-sealed body is in flat
Side is provided with fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610909572.0A CN106374740A (en) | 2016-10-19 | 2016-10-19 | Boosting circuit with high heat dissipation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610909572.0A CN106374740A (en) | 2016-10-19 | 2016-10-19 | Boosting circuit with high heat dissipation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106374740A true CN106374740A (en) | 2017-02-01 |
Family
ID=57896457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610909572.0A Pending CN106374740A (en) | 2016-10-19 | 2016-10-19 | Boosting circuit with high heat dissipation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106374740A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063311A (en) * | 2020-01-17 | 2020-04-24 | 京东方科技集团股份有限公司 | Boost circuit, backlight drive circuit and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204119028U (en) * | 2014-08-16 | 2015-01-21 | 慈溪锐恩电子科技有限公司 | A kind of twin-stage Boost circuit |
| CN204257664U (en) * | 2014-12-06 | 2015-04-08 | 滨海治润电子有限公司 | Diode |
| CN204886697U (en) * | 2015-07-09 | 2015-12-16 | 安徽明赫新能源有限公司 | High -gain boost circuit |
| CN105490530A (en) * | 2015-12-27 | 2016-04-13 | 华南理工大学 | Quasi Z source converter employing switched inductor and voltage lifting technique |
| CN105529923A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Novel Trans-Z source boost converter |
-
2016
- 2016-10-19 CN CN201610909572.0A patent/CN106374740A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204119028U (en) * | 2014-08-16 | 2015-01-21 | 慈溪锐恩电子科技有限公司 | A kind of twin-stage Boost circuit |
| CN204257664U (en) * | 2014-12-06 | 2015-04-08 | 滨海治润电子有限公司 | Diode |
| CN204886697U (en) * | 2015-07-09 | 2015-12-16 | 安徽明赫新能源有限公司 | High -gain boost circuit |
| CN105490530A (en) * | 2015-12-27 | 2016-04-13 | 华南理工大学 | Quasi Z source converter employing switched inductor and voltage lifting technique |
| CN105529923A (en) * | 2015-12-31 | 2016-04-27 | 华南理工大学 | Novel Trans-Z source boost converter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063311A (en) * | 2020-01-17 | 2020-04-24 | 京东方科技集团股份有限公司 | Boost circuit, backlight drive circuit and display panel |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170201 |