CN106374179B - A kind of half module substrate integrated wave guide power divider of via hole load - Google Patents

A kind of half module substrate integrated wave guide power divider of via hole load Download PDF

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Publication number
CN106374179B
CN106374179B CN201610839270.0A CN201610839270A CN106374179B CN 106374179 B CN106374179 B CN 106374179B CN 201610839270 A CN201610839270 A CN 201610839270A CN 106374179 B CN106374179 B CN 106374179B
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waveguide
via hole
half module
distribution
transmission
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CN106374179A (en
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林澍
毕延迪
毛宇
王竣
刘璐
刘冠君
杜天尧
赵志华
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Harbin Institute of Technology
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Harbin Institute of Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports

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  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Non-Reversible Transmitting Devices (AREA)

Abstract

The present invention provides a kind of half module substrate integrated wave guide power dividers of via hole load; the power divider is double-sided printed-circuit board structure; two sides mirror symmetry, the power divider include input transmission line part, full mould waveguide transmission part, full mould waveguide distribution portion, half module waveguide transmission part and output transmission line part;The power divider loads to improve impedance matching and reduce port reflection by introducing via hole in place, and the full mould waveguiding structure of delivery outlet is improved to half module waveguiding structure, achievees the purpose that size reduction with this.

Description

A kind of half module substrate integrated wave guide power divider of via hole load
Technical field
The present invention relates to the power dividers more particularly to one in a kind of design for microwave and millimeter wave component and system The half module substrate integrated wave guide power divider of kind via hole load.
Background technique
Microwave and millimeter wave power splitter has obtained a large amount of application in the feeder line of microwave and millimeter wave antenna and millimeter wave instrument, It is a critical component in feeder system, and especially in microwave&millimeter-wave IC, the feed of aerial array needs Use low-loss, wide band power splitter.Common microstrip power divider its characteristic in centre frequency is ideal, but one Frequency deviation occurs for denier, and the performance of entire power splitter can all be deteriorated, to influence the performance of whole system.Utilize substrate integration wave-guide skill Art can produce high q-factor, low-loss, wide band power divider, and reduce processing cost and technology difficulty, and in this base Half module substrate integrated wave guide structure on plinth can more reduce the volume of its half, it is made to be more suitable for microwave and millimeter wave component and be The design of system.
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) is that one kind is real on dielectric substrate It is now guided wave structure similar to metal rectangular waveguide transmission characteristic, since the structure has Low emissivity, filter with low insertion loss, miniaturization, easily In integrated the advantages that, have become a hot topic of research, be also widely used in the design of microwave passive component.By means of printing electricity The low cost batch production of road technique, the high performance microwave passive device based on medium integrated waveguide is possibly realized.
The invention proposes a kind of half module substrate integrated wave guide power divider of via hole load, test result shows this Power divider can realize relatively stable constant power distribution output, the power splitter in the working frequency range of 7.86-9.06GHz It can be widely used in the communication system within the scope of respective frequencies.
Summary of the invention
The purpose of the present invention is to overcome the shortcomings of the existing technology and deficiency, provides a kind of half-module chip of via hole load Integrated waveguide power distributor realizes relatively stable constant power distribution output.
The purpose of the present invention is achieved through the following technical solutions: a kind of half module substrate integrated wave guide power point of via hole load Orchestration, the power divider are double-sided printed-circuit board structure, two sides mirror symmetry, including input transmission line part, Quan Mo Waveguide transmission part, full mould waveguide distribution portion, half module waveguide transmission part and output transmission line part;
The input transmission line part is located at top section, is made of rectangle and isosceles trapezoid gradual change balance microstrip line;
The full mould waveguide transmission part is the rectangular waveguide positioned at upper section, which contains two sides metallization VIA Array;
The full mould waveguide distribution portion is two rectangular waveguides positioned at middle upper section, contains two sides metallization VIA array With three distribution via holes, three distribution via holes are distribution via hole one, distribution via hole two and distribution via hole three;
Half module waveguide transmission part is located at middle section, by four half module waveguides only containing side metallization VIA array Composition arranged in parallel;
The output transmission line part is located at lower section, by the balance micro-strip of the rectangle of right-angled trapezium gradual change, rectangle and bending Line composition.
Further, the distribution via hole one and distribution via hole three are symmetrical about dielectric substrate broadside center line, point It is located at the underface of dielectric substrate broadside center line with via hole two.
Further, dielectric substrate is with a thickness of 1.6mm, relative dielectric constant 4.4.
Further, the dielectric substrate width W of the power divider is 40mm, and dielectric substrate length L is 67.4mm, defeated Enter transmission line rectangle balance microstrip line width wiIt is 3.2mm for 2mm, the trapezoidal balance microstrip line base width ws of input transmission line, Half module transmission waveguide width woFor 1.75mm, full mould transmission waveguide length ainIt is for 13.6mm, half module transmission waveguide spacing gap 2mm, full mould distribution waveguide and the long back gauge w of substrateg1For 2.5mm, half module transmission waveguide and the long back gauge w of substrateg2For 1.5mm, Output transmission line right-angled trapezium balance microstrip line base width ws1For 2.5mm, input transmission line rectangle balance microstrip line length l1 For 5mm, the trapezoidal balance microstrip line length l of input transmission line2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, entirely Mould distributes waveguide segment length l4For 19.6mm, half module transmission waveguide length l5For 18mm, output transmission line rectangle balance microstrip line is long Spend l6For 12mm, the lateral distance k of via hole one and full mould distribution waveguide sidewalls is distributed1For 4.85mm, via hole one and full mould point are distributed Fore-and-aft distance t with waveguide sidewalls1For 4mm, the fore-and-aft distance t of via hole two and full mould distribution waveguide sidewalls is distributed2For 4.8mm, divide With via hole Radius r1For 0.25mm, two radius r of via hole is distributed2For 0.15mm.
The present invention is based on the power dividers of half module substrate integrated wave guide structure mainly by by basic waveguide Y type knot It is cascaded, is loaded by introducing via hole in place to improve impedance matching and reduce port reflection, and by delivery outlet Full mould waveguiding structure is improved to half module waveguiding structure, achievees the purpose that size reduction with this.
Detailed description of the invention
Fig. 1: the mock-up of the half module substrate integrated wave guide power divider of via hole load;
Fig. 2: the structure chart of the half module substrate integrated wave guide power divider of via hole load;
Fig. 3: the S parameter simulation result of half module SIW quartering power divider;
Fig. 4: half module SIW quartering power divider experimental result;
Specific embodiment
Technical solution in the embodiment of the present invention that following will be combined with the drawings in the embodiments of the present invention carries out clear, complete Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts Example is applied, shall fall within the protection scope of the present invention.
In conjunction with Fig. 1, the present invention protects a kind of half module substrate integrated wave guide power divider of via hole load, the power point Orchestration is double-sided printed-circuit board structure, two sides mirror symmetry, including input transmission line part, full mould waveguide transmission part, complete Mould waveguide distribution portion, half module waveguide transmission part and output transmission line part;
The input transmission line part is located at top section, is made of rectangle and isosceles trapezoid gradual change balance microstrip line;
The full mould waveguide transmission part is the rectangular waveguide positioned at upper section, which contains two sides metallization VIA Array;
The full mould waveguide distribution portion is two rectangular waveguides positioned at middle upper section, contains two sides metallization VIA array With three distribution via holes, three distribution via holes are distribution via hole one, distribution via hole two and distribution via hole three;
Half module waveguide transmission part is located at middle section, by four half module waveguides only containing side metallization VIA array Composition arranged in parallel;
The output transmission line part is located at lower section, by the balance micro-strip of the rectangle of right-angled trapezium gradual change, rectangle and bending Line composition.
The distribution via hole one and distribution via hole three are symmetrical about dielectric substrate broadside center line, distribute via hole two In the underface of dielectric substrate broadside center line.The dielectric substrate is with a thickness of 1.6mm, relative dielectric constant 4.4.
In conjunction with Fig. 2, a kind of structure chart of the half module substrate integrated wave guide power divider of via hole load, the power distribution The dielectric substrate width W of device is 40mm, and dielectric substrate length L is 67.4mm, input transmission line rectangle balance microstrip line width wi It is 3.2mm, half module transmission waveguide width w for 2mm, the trapezoidal balance microstrip line base width ws of input transmission lineoFor 1.75mm, entirely Mould transmission waveguide length ainIt is 2mm for 13.6mm, half module transmission waveguide spacing gap, full mould distribution waveguide and the long back gauge of substrate wg1For 2.5mm, half module transmission waveguide and the long back gauge w of substrateg2For 1.5mm, output transmission line right-angled trapezium balance microstrip line bottom Hem width degree ws1For 2.5mm, input transmission line rectangle balance microstrip line length l1For 5mm, the trapezoidal balance microstrip line of input transmission line Length l2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, full mould distributes waveguide segment length l4For 19.6mm, half Mould transmission waveguide length l5For 18mm, output transmission line rectangle balance microstrip line length l6For 12mm, via hole one and full mould point are distributed Lateral distance k with waveguide sidewalls1For 4.85mm, the fore-and-aft distance t of via hole one and full mould distribution waveguide sidewalls is distributed1For 4mm, Distribute the fore-and-aft distance t of via hole two and full mould distribution waveguide sidewalls2For 4.8mm, via hole Radius r is distributed1For 0.25mm, distribution Two radius r of via hole2For 0.15mm.Referring specifically to table 1.
The structural parameters (unit: mm) of the half module substrate integrated wave guide power divider of 1 via hole of table load
The S parameter emulation of the half module substrate integrated wave guide power divider of via hole load is given in conjunction with Fig. 3 and Fig. 4, Fig. 3 As a result, it can be seen from the figure that designed power divider is in the working frequency range of 7.79-9.86GHz | S11| < -10dB, Match condition in band is good, in above-mentioned working frequency range, it can be seen that the output port of the power divider, which has, to be compared Stable power distribution output: transmission coefficient | S21|, | S51| with interior stabilization between -6.94~-8.48dB;Transmission coefficient | S31|, | S41| stablize between -6.37~-7.42dB with interior distribution coefficient, passband fluctuation is smaller.Entire power splitter use pair Claim structure, transmission coefficient | S21| with | S51| curve essentially coincides, transmission coefficient | S31| with | S41| curve essentially coincides, entire function Rate distributor is functional.Fig. 4 gives the S parameter test knot of the half module substrate integrated wave guide power divider of via hole load Fruit, it can be seen from the figure that the power distribution of output port is relatively stable in the working frequency range of 7.86-9.06GHz, Ports 2 several from left to right (port 1 is input port) i.e. from Fig. 2 | S21| it is fluctuated between -8.38~-10.42dB;Port 3 I.e. | S31| it is fluctuated between -8.19~-10.23dB;Port 4 is | S41| it is fluctuated between -8.23~-10.18dB;Port 5 is | S51| It is fluctuated between -7.98~-10.02dB.
A kind of half module substrate integrated wave guide power divider of via hole load provided by the present invention has been carried out in detail above Thin to introduce, used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said It is bright to be merely used to help understand method and its core concept of the invention;At the same time, for those skilled in the art, foundation Thought of the invention, there will be changes in the specific implementation manner and application range, in conclusion the content of the present specification is not It is interpreted as limitation of the present invention.

Claims (1)

1. a kind of half module substrate integrated wave guide power divider of via hole load, the power divider is double-sided printed-circuit board Structure, two sides mirror symmetry, it is characterised in that: including input transmission line part, full mould waveguide transmission part, full mould waveguide distribution Partially, half module waveguide transmission part and output transmission line part;
The input transmission line part is located at top section, is made of rectangle and isosceles trapezoid gradual change balance microstrip line;
The full mould waveguide transmission part is the rectangular waveguide positioned at upper section, which contains two sides metallization VIA battle array Column;
The full mould waveguide distribution portion is two rectangular waveguides positioned at middle upper section, contains two sides metallization VIA array and three A distribution via hole, three distribution via holes are distribution via hole one, distribution via hole two and distribution via hole three;
Half module waveguide transmission part is located at middle section, parallel by four half module waveguides only containing side metallization VIA array It rearranges;
The output transmission line part is located at lower section, by the balance microstrip line group of the rectangle of right-angled trapezium gradual change, rectangle and bending At;
The distribution via hole one and distribution via hole three are symmetrical about dielectric substrate broadside center line, and distribution via hole two, which is located at, to be situated between The underface of matter substrate broadside center line;
Dielectric substrate is with a thickness of 1.6mm, relative dielectric constant 4.4;Dielectric substrate width W is 40mm, and dielectric substrate length L is 67.4mm, input transmission line rectangle balance microstrip line width wiFor 2mm, the trapezoidal balance microstrip line base width ws of input transmission line For 3.2mm, half module transmission waveguide width woFor 1.75mm, full mould transmission waveguide length ainFor 13.6mm, between half module transmission waveguide It is 2mm away from gap, full mould distribution waveguide and the long back gauge w of substrateg1For 2.5mm, half module transmission waveguide and the long back gauge w of substrateg2 For 1.5mm, output transmission line right-angled trapezium balance microstrip line base width ws1For 2.5mm, input transmission line rectangle balances micro-strip Line length l1For 5mm, the trapezoidal balance microstrip line length l of input transmission line2For 4.5mm, full mould transmission waveguide transmission segment length l3For 3.8mm, full mould distribute waveguide segment length l4For 19.6mm, half module transmission waveguide length l5For 18mm, output transmission line rectangle balance Micro-strip line length l6For 12mm, the lateral distance k of via hole one and full mould distribution waveguide sidewalls is distributed1For 4.85mm, via hole one is distributed With the fore-and-aft distance t of full mould distribution waveguide sidewalls1For 4mm, the fore-and-aft distance t of via hole two and full mould distribution waveguide sidewalls is distributed2For 4.8mm distributes via hole Radius r1For 0.25mm, two radius r of via hole is distributed2For 0.15mm.
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CN110661072A (en) * 2019-11-04 2020-01-07 中国电子科技集团公司第三十六研究所 Ka-band waveguide power divider
CN112563711B (en) * 2020-11-23 2021-07-27 杭州电子科技大学 Rectangular patch-half-mode substrate integrated waveguide hybrid 90-degree directional coupler
CN113871829A (en) * 2021-09-27 2021-12-31 上海交通大学 Half-mode and ridge-added coaxial substrate integrated waveguide interconnection device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2796136Y (en) * 2005-05-30 2006-07-12 东南大学 Substrate integrated waveguide broad band multiple path power distributor
CN201117818Y (en) * 2007-11-12 2008-09-17 杭州电子科技大学 H surface sectoral horn antenna embodying filter function
CN105826643A (en) * 2016-04-26 2016-08-03 南京邮电大学 Half-mode substrate integrated waveguide-based compact six-port circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2796136Y (en) * 2005-05-30 2006-07-12 东南大学 Substrate integrated waveguide broad band multiple path power distributor
CN201117818Y (en) * 2007-11-12 2008-09-17 杭州电子科技大学 H surface sectoral horn antenna embodying filter function
CN105826643A (en) * 2016-04-26 2016-08-03 南京邮电大学 Half-mode substrate integrated waveguide-based compact six-port circuit

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