CN106356411A - Antireflection layer structure suitable for black silicon wafer and manufacturing method thereof - Google Patents
Antireflection layer structure suitable for black silicon wafer and manufacturing method thereof Download PDFInfo
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- CN106356411A CN106356411A CN201610986914.9A CN201610986914A CN106356411A CN 106356411 A CN106356411 A CN 106356411A CN 201610986914 A CN201610986914 A CN 201610986914A CN 106356411 A CN106356411 A CN 106356411A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 173
- 239000010703 silicon Substances 0.000 claims abstract description 173
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 170
- 239000000463 material Substances 0.000 claims abstract description 141
- 150000004767 nitrides Chemical class 0.000 claims abstract description 84
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 3
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 10
- 230000009466 transformation Effects 0.000 abstract description 9
- 230000006698 induction Effects 0.000 abstract 1
- 230000003667 anti-reflective effect Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 150000003376 silicon Chemical class 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to an antireflection layer structure suitable for a black silicon wafer. The antireflection layer structure comprises a silicon substrate and an antireflection layer formed on the silicon substrate, wherein the antireflection layer comprises a nitride material layer of the first silicon formed on the silicon substrate; a nitride material layer of the second silicon formed on the nitride material layer of the first silicon; a nitride material layer of the third silicon formed on the nitride material layer of the second silicon; a nitric oxide material layer of the silicon formed on the nitride material layer of the third silicon; and an oxide material layer of the silicon formed on the nitric oxide material layer of the silicon. The antireflection layer structure suitable for the black silicon wafer can enhance the antireflection effect, the technical problem that the traditional black silicon wafer is bad in passivation effect is solved, the anti-potential induction attenuation is facilitated, and then the transformation efficiency of the black silicon wafer is improved.
Description
Technical field
The present invention relates to photovoltaic art, more particularly to a kind of antireflection layer structure being applied to black silicon silicon chip and its making
Method.
Background technology
The special microcosmic nanostructured of black silicon material makes it possess the reflection preventing ability of brilliance, is widely used at present too
Sun can battery industry.However, there is contradiction between its excellent reflection preventing ability and serious Carrier recombination, collection, difficult
To reach good balance.At present, sinx film is widely adopted in photovoltaic research and industrialization field, and it is applied not only to
Antireflective, is also used for surface passivation and body passivation.
Traditional black silicon material is due to being used for antireflective, its antireflective being formed merely with sinx film merely with sinx film
The antireflecting effect of layer is poor, passivation effect is poor, transformation efficiency is low.
Content of the invention
Based on this it is necessary to for above-mentioned black silicon material antireflection layer antireflecting effect poor, passivation effect is poor, turn
Change the low problem of efficiency, provide a kind of there is good anti-reflective effect, passivation effect and high transformation efficiency be applied to black silicon
Silicon chip antireflection layer structure.
A kind of antireflection layer structure being applied to black silicon silicon chip, silicon substrate and the antireflective being formed on described silicon substrate
Layer, described antireflection layer includes:
The layer of nitride material of the first silicon being formed in described silicon substrate；
The layer of nitride material of the second silicon being formed in the layer of nitride material of described first silicon；
The layer of nitride material of the 3rd silicon being formed in the layer of nitride material of described second silicon；
The oxymtride material layer of the silicon being formed in the layer of nitride material of described 3rd silicon；
And on the oxymtride material layer of described silicon formed silicon layer of oxide material.
The above-mentioned antireflection layer structure being applied to black silicon silicon chip can strengthen its anti-reflective effect, solves traditional black silicon
The technical problem of silicon chip passivation effect difference, is conducive to resisting potential induced degradation, and then improves the transformation efficiency of black silicon silicon chip.
Wherein in an embodiment, the layer of nitride material of described first silicon, the layer of nitride material of the second silicon, the 3rd
The refractive index of the oxymtride material layer of the layer of nitride material of silicon, the oxymtride material layer of silicon and silicon is sequentially reduced.
Wherein in an embodiment, the thickness range of the layer of nitride material of described first silicon is 10～20nm, described
The thickness range of the layer of nitride material of the second silicon is 10～25nm, and the thickness range of the layer of nitride material of described 3rd silicon is
40～60nm, the thickness range of the oxymtride material layer of described silicon is 10～25nm, the thickness of the layer of oxide material of described silicon
Degree scope is 2～5nm.
Wherein in an embodiment, the chemical formula of the nitrogen oxides of silicon in the oxymtride material layer of described silicon is
sixnyoz, the interval of wherein said x be 1～4, y interval be the interval of 1～2, z be 1～4.
Wherein in an embodiment, the chemical formula of the oxide of the silicon in the layer of oxide material of described silicon is sixoy,
The interval of wherein said x is the interval of 1～2, y is 2～4.
A kind of antireflection layer construction manufacturing method being applied to black silicon silicon chip, comprises the following steps:
Form the layer of nitride material of the first silicon in described black silicon substrate；
The layer of nitride material of the second silicon is formed on the layer of nitride material of described first silicon；
The layer of nitride material of the 3rd silicon is formed on the layer of nitride material of described second silicon；
The oxymtride material layer of silicon is formed on the layer of nitride material of described 3rd silicon；
The layer of oxide material of silicon is formed on the oxymtride material layer of described silicon.
Its antireflective effect can be strengthened by the antireflection layer structure being applied to black silicon silicon chip that above-mentioned manufacture method obtains
Really, solve the technical problem of traditional black silicon silicon chip passivation effect difference, be conducive to resisting potential induced degradation, and then improve black silicon
The transformation efficiency of silicon chip.
Wherein in an embodiment, the silicon source of the oxymtride material layer of described silicon is sih4, nitrogen source be nh3And oxygen source
For n2o.
Wherein in an embodiment, the silicon source of the oxymtride material layer of described silicon is sih4, oxygen source be n2o.
Wherein in an embodiment, the layer of nitride material of the first silicon, the layer of nitride material of the second silicon and/or the 3rd
The silicon source of the layer of nitride material of silicon is sih4, nitrogen source be nh3.
Wherein in an embodiment, the layer of nitride material of the first silicon, the layer of nitride material of the second silicon, the 3rd silicon
The layer of oxide material of layer of nitride material, the oxymtride material layer of silicon and silicon passes through plasma enhanced chemical vapor deposition
Mode formed.
Brief description
Fig. 1 is the structural representation of the antireflection layer structure being applied to black silicon silicon chip of the present invention one preferred implementation；
Fig. 2 is the stream of the manufacture method of antireflection layer structure being applied to black silicon silicon chip of another side of being preferable to carry out of the present invention
Cheng Tu.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, and
It is not used in the restriction present invention.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field belonging to the present invention
The implication that technical staff is generally understood that is identical.The term being used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body is it is not intended that in limiting the present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all of combination of the Listed Items closing.
As shown in figure 1, present embodiment discloses the antireflection layer structure 100 being applied to black silicon silicon chip, this antireflection layer
Structure 100 includes the antireflection layer being formed on black silicon substrate 10, and this antireflection layer has reflection preventing ability, can reduce irradiation
In the reflection of the surface of black silicon silicon chip 10.
Specifically, this antireflection layer structure 100 includes the nitride material of the first silicon in above-mentioned black silicon substrate 10 formation
Layer 110, the layer of nitride material 120 of the second silicon being formed in the layer of nitride material 110 of above-mentioned first silicon；Above-mentioned second
The layer of nitride material 130 of the 3rd silicon being formed in the layer of nitride material 120 of silicon；Layer of nitride material in above-mentioned 3rd silicon
The oxymtride material layer 140 of the silicon being formed on 130；And the silicon being formed on the oxymtride material layer 140 of above-mentioned silicon
Layer of oxide material 150.
Wherein, the layer of nitride material 110 of above-mentioned first silicon, the layer of nitride material 120 of the second silicon, the nitridation of the 3rd silicon
The refractive index of the layer of oxide material 150 of thing material layer 130, the oxymtride material layer 140 of silicon and silicon is sequentially reduced.
Specifically, the scope of the refractive index of layer of nitride material 110 of above-mentioned first silicon be 2.20～2.30, and this first
The thickness range of the layer of nitride material 110 of silicon is 10～20nm, in detail, the layer of nitride material 110 of above-mentioned first silicon
In the nitride of silicon chemical formula be sixny, wherein this sixnyIn x interval be 1～4, y interval be 1
～3.
The scope of the refractive index of layer of nitride material 120 of above-mentioned second silicon is 2.15～2.25, and the nitrogen of this second silicon
The thickness range of compound material layer 120 is 10～25nm, the chemistry of the nitride of silicon in the layer of nitride material 120 of the second silicon
Formula is sixny, wherein this sixnyIn x interval be 1～4, y interval be 1～3.
The scope of the refractive index of layer of nitride material 130 of above-mentioned 3rd silicon is 1.95～2.05, and the nitrogen of the 3rd silicon
The thickness range of compound material layer 130 is 40～60nm, the chemistry of the nitride of silicon in the layer of nitride material 130 of the 3rd silicon
Formula is sixny, wherein this sixnyIn x interval be 1～4, y interval be 1～3.
The scope of the refractive index of oxymtride material layer 140 of above-mentioned silicon is 1.8～2.0, and the nitrogen oxides material of this silicon
The thickness range of the bed of material 140 is 10～25nm, and the chemical formula of the nitrogen oxides of silicon in the oxymtride material layer of silicon is
sixnyoz, the interval of wherein said x be 1～4, y interval be the interval of 1～2, z be 1～4.This embodiment party
The oxymtride material layer 140 of the silicon in formula advantageously reduces the spilling of h, improves the open-circuit voltage of above-mentioned black silicon silicon chip 100
(uoc), so improve black silicon silicon chip 100 transformation efficiency.
The scope of the refractive index of layer of oxide material 150 of above-mentioned silicon is 1.4～1.6.And the layer of oxide material of this silicon
150 thickness range is 2～5nm.The chemical formula of the oxide of the silicon in the layer of oxide material of silicon is sixoy, wherein said x
Interval be 1～2, y interval be 2～4.The layer of oxide material 150 of the above-mentioned silicon of present embodiment is conducive to
Resisting potential induced degradation (pid, potential induced degradation), layer of oxide material 150 energy of this silicon simultaneously
Enough strengthen the anti-reflective effect of black silicon silicon chip, and then improve the transformation efficiency of black silicon silicon chip.
The above-mentioned antireflection layer structure 100 being applied to black silicon silicon chip can strengthen the anti-reflective effect of black silicon silicon chip, solves
The technical problem of traditional black silicon silicon chip passivation effect difference, is conducive to resisting potential induced degradation, and then improves black silicon silicon chip
Transformation efficiency.
Another preferred implementation of the present invention discloses the making side of the above-mentioned antireflection layer structure being applied to black silicon silicon chip
Method, this manufacture method mainly comprises the steps that
S10: form the layer of nitride material of the first silicon in described black silicon substrate；
In this step, the layer of nitride material of above-mentioned first silicon is to be led to nitrogen source (for example) using silicon source (for example)
The mode crossing plasma enhanced chemical vapor deposition is formed, and in this step, above-mentioned silicon source is sih4, above-mentioned nitrogen source be nh3, tool
Body ground condition is as shown in table 1.
S20: the layer of nitride material of the second silicon is formed on the layer of nitride material of described first silicon；
In this step, the layer of nitride material of above-mentioned second silicon is in the layer of nitride material of above-mentioned first silicon, profit
Formed by way of plasma enhanced chemical vapor deposition with nitrogen source (for example) with silicon source (for example), in this step,
Above-mentioned silicon source is sih4, above-mentioned nitrogen source be nh3, specifically condition is as shown in table 1.
S30: the layer of nitride material of the 3rd silicon is formed on the layer of nitride material of described second silicon；
In this step, the layer of nitride material of above-mentioned 3rd silicon is in the layer of nitride material of above-mentioned second silicon, profit
Formed by way of plasma enhanced chemical vapor deposition with nitrogen source with silicon source, in this step, above-mentioned silicon source is sih4, on
Stating nitrogen source is nh3, specifically condition is as shown in table 1.
S40: the oxymtride material layer of silicon is formed on the layer of nitride material of described 3rd silicon；
In this step, the oxymtride material layer of above-mentioned silicon is in the layer of nitride material of above-mentioned 3rd silicon, utilizes
Silicon source, nitrogen source and oxygen source are formed by way of plasma enhanced chemical vapor deposition, and in this step, above-mentioned silicon source is
sih4, above-mentioned nitrogen source be nh3, oxygen source be n2O, specifically condition is as shown in table 1.
S50: the layer of oxide material of silicon is formed on the oxymtride material layer of described silicon.
In this step, the layer of oxide material of above-mentioned silicon is on the oxymtride material layer of above-mentioned silicon, using silicon source,
Nitrogen source and oxygen source are formed by way of plasma enhanced chemical vapor deposition, and in this step, above-mentioned silicon source is sih4, above-mentioned
Nitrogen source is nh3, oxygen source be n2O, specifically condition is as shown in table 1.
Table 1
| Antireflection layer | Ground floor | The second layer | Third layer | 4th layer | Layer 5 |
| The step time | 80～105 | 80～120 | 400～600 | 80～120 | 10～100 |
| Temperature | 450 | 450 | 450 | 450 | 450 |
| sih4 | 800～1100 | 800～1100 | 800～1100 | 800～1100 | 800～1100 |
| nh3 | 4500～6000 | 4500～6000 | 4500～6000 | 4500～6000 | 4500～6000 |
| n2o | 0 | 0 | 0 | 0～1000 | 500～5000 |
| Pressure | 1500～1650 | 1500～1650 | 1500～1650 | 1500～1650 | 1500～1650 |
| Rf power | 5500～8500 | 5500～8500 | 5500～8500 | 5500～8500 | 5500～8500 |
| Pulse is opened | 40～60 | 40～60 | 40～60 | 40～60 | 40～60 |
| Pulse is closed | 450～700 | 450～700 | 450～700 | 450～700 | 450～700 |
Its anti-reflective effect can be strengthened by the black silicon silicon chip that above-mentioned manufacture method obtains, solve traditional black silicon silicon
The technical problem of piece passivation effect difference, is conducive to resisting potential induced degradation, and then improves the transformation efficiency of black silicon silicon chip.
Each technical characteristic of embodiment described above can arbitrarily be combined, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic applied in example is all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope of this specification record.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, some deformation can also be made and improve, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of antireflection layer structure being applied to black silicon silicon chip it is characterised in that on black silicon substrate formed antireflection layer,
Described antireflection layer includes:
The layer of nitride material of the first silicon being formed in described silicon substrate；
The layer of nitride material of the second silicon being formed in the layer of nitride material of described first silicon；
The layer of nitride material of the 3rd silicon being formed in the layer of nitride material of described second silicon；
The oxymtride material layer of the silicon being formed in the layer of nitride material of described 3rd silicon；
And on the oxymtride material layer of described silicon formed silicon layer of oxide material.
2. the antireflection layer structure being applied to black silicon silicon chip according to claim 1 is it is characterised in that described first silicon
Layer of nitride material, the layer of nitride material of the second silicon, the layer of nitride material of the 3rd silicon, the oxymtride material layer of silicon and silicon
The refractive index of oxymtride material layer be sequentially reduced.
3. the antireflection layer structure being applied to black silicon silicon chip according to claim 1 is it is characterised in that described first silicon
The thickness range of layer of nitride material is 10～20nm, the thickness range of the layer of nitride material of described second silicon is 10～
25nm, the thickness range of the layer of nitride material of described 3rd silicon is 40～60nm, the thickness of the oxymtride material layer of described silicon
Degree scope is 10～25nm, and the thickness range of the layer of oxide material of described silicon is 2～5nm.
4. the antireflection layer structure being applied to black silicon silicon chip according to claim 1 is it is characterised in that the nitrogen oxygen of described silicon
The chemical formula of the nitrogen oxides of the silicon in compound material layer is sixnyoz, the interval of wherein said x is the value of 1～4, y
The interval interval for 1～2, z is 1～4.
5. the antireflection layer structure being applied to black silicon silicon chip according to claim 1 is it is characterised in that the oxidation of described silicon
The chemical formula of the oxide of the silicon in thing material layer is sixoy, the interval of wherein said x is the interval of 1～2, y is 2
～4.
6. a kind of manufacture method of the antireflection layer structure being applied to black silicon silicon chip is it is characterised in that comprise the following steps:
Form the layer of nitride material of the first silicon in described black silicon substrate；
The layer of nitride material of the second silicon is formed on the layer of nitride material of described first silicon；
The layer of nitride material of the 3rd silicon is formed on the layer of nitride material of described second silicon；
The oxymtride material layer of silicon is formed on the layer of nitride material of described 3rd silicon；
The layer of oxide material of silicon is formed on the oxymtride material layer of described silicon.
7. the manufacture method of the antireflection layer structure being applied to black silicon silicon chip according to claim 6 is it is characterised in that institute
The silicon source stating the oxymtride material layer of silicon is sih4, nitrogen source be nh3And oxygen source is n2o.
8. the manufacture method of the antireflection layer structure being applied to black silicon silicon chip according to claim 6 is it is characterised in that institute
The silicon source stating the oxymtride material layer of silicon is sih4, oxygen source be n2o.
9. the manufacture method of the antireflection layer structure being applied to black silicon silicon chip according to claim 6 is it is characterised in that
The silicon source of the layer of nitride material of the layer of nitride material of one silicon, the layer of nitride material of the second silicon and/or the 3rd silicon is sih4、
Nitrogen source is nh3.
10. the antireflection layer structure being applied to black silicon silicon chip according to claim 6 manufacture method it is characterised in that
The layer of nitride material of the first silicon, the layer of nitride material of the second silicon, the layer of nitride material of the 3rd silicon, the nitrogen oxides material of silicon
The layer of oxide material of the bed of material and silicon is formed by way of plasma enhanced chemical vapor deposition.
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