CN106340507A - Microelectromechanical system sensing chip package - Google Patents
Microelectromechanical system sensing chip package Download PDFInfo
- Publication number
- CN106340507A CN106340507A CN201510402853.2A CN201510402853A CN106340507A CN 106340507 A CN106340507 A CN 106340507A CN 201510402853 A CN201510402853 A CN 201510402853A CN 106340507 A CN106340507 A CN 106340507A
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- CN
- China
- Prior art keywords
- mems sensor
- sensor chip
- signal transmission
- base plate
- transmission electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Abstract
The invention discloses micro-electromechanical system sensing chip package which comprises a circuit substrate, a driving chip and a micro-electromechanical system sensing chip. The circuit substrate comprises a first surface and a second surface. The driving chip is buried in the circuit substrate. The driving chip comprises at least one first signal transmission electrode, at least one second signal transmission electrode and at least one third signal transmission electrode. The micro-electromechanical system sensing chip is arranged on the first surface of the circuit substrate. The circuit substrate comprises at least one first conductive wire electrically connected with the first signal transmission electrode and at least one second conductive wire electrically connected with the second signal transmission electrode. The first conductive wire is exposed only on the first surface. The second conductive wire is exposed only on the second surface. The micro-electromechanical system sensing chip is electrically connected with the first signal transmission electrode through the first conductive wire. The micro-electromechanical system sensing chip package provided by the invention is not easily affected by static electricity, and solves the problem of reduced package yield due to the electrostatic susceptibility of the driving chip.
Description
Technical field
The present invention relates to a kind of chip package, in particular to a kind of MEMS (micro-electro-mechanical
System, mems) sensor chip encapsulation.
Background technology
With scientific and technological progress, electronic product is invariably towards the trend development of lightweight and miniaturization.Taking mike as a example, MEMS sensor chip (mems
Sensors) it has been widely used in this field.Traditional mike includes MEMS sensor chip, in order to drive the driving chip of MEMS sensor chip and the circuit board in order to carry MEMS sensor chip and driving chip.Circuit board, in addition to conductive layer with dielectric layer, also has some conductive through holes (conductive
Through via), and the driving chip in mike would generally be electrically connected with these conductive through holes.In the encapsulation process of MEMS sensor chip, when buildup of static electricity to a certain degree produce electric discharge phenomena when, because driving chip is electrically connected with these conductive through holes, therefore driving chip is highly susceptible to the impact of static discharge and is compromised, and then leads to encapsulate the decline of yield.
In sum, how in the situation significantly not changing encapsulation procedure, effectively lift the encapsulation yield of MEMS sensor chip, actually research staff desires most ardently one of problem of solution at present.
Content of the invention
The present invention provides a kind of MEMS sensor chip encapsulation, and it is less susceptible to by electrostatic influence.
The MEMS sensor chip encapsulation of the present invention, including circuit base plate, driving chip and MEMS sensor chip.Circuit base plate has first surface and the second surface relative with first surface, and be embedded in driving chip in circuit base plate, and driving chip includes at least one first signal transmission electrode, at least one second signal transmission electrode and at least one the 3rd signal transmission electrode.MEMS sensor chip is configured on the first surface of circuit base plate.Circuit base plate include at least one and first signal transmission electrode be electrically connected with the first wire and at least one with second signal transmission electrode electric connection the second wire, first wire is only revealed on first surface, and the second wire is only revealed on second surface, and MEMS sensor chip passes through the first wire and the first signal transmission electrode is electrically connected with.
In one embodiment of this invention, above-mentioned circuit base plate can further include at least one privates being simultaneously revealed on first surface and second surface, and privates is electrically independent with driving chip.
In one embodiment of this invention, above-mentioned circuit base plate has Yi Yinbu (sound
Port), and MEMS sensor chip has a cavity, and sound port correspond to cavity.
In one embodiment of this invention, above-mentioned driving chip is embedded in inside circuit base plate, and maintains a distance between driving chip and sound port.
In one embodiment of this invention, above-mentioned driving chip is, for example, ASIC (application
Specific integrated circuit, asic).
In one embodiment of this invention, above-mentioned MEMS sensor chip is, for example, sound sensing chip.
In one embodiment of this invention, the first above-mentioned signal transmission electrode, the second signal transmission electrode and the 3rd signal transmission electrode are distributed on the same surface of driving chip.
In one embodiment of this invention, the first above-mentioned signal transmission electrode is signal input electrode, and the second signal transmission electrode is signal output electrode, and the 3rd signal transmission electrode is ground electrode.
In one embodiment of this invention, the 3rd above-mentioned signal transmission electrode is on the second surface be electrically connected to circuit base plate.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further include multiple conductive projections, and wherein MEMS sensor chip is to pass through conductive projection in flip mode to be electrically connected with circuit base plate.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further include multiple bonding wires, and wherein MEMS sensor chip is passed through bonding wire and is electrically connected with circuit base plate.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further include an electronic building brick, and electronic building brick is configured on first surface, and electronic building brick is passed through circuit base plate and is electrically connected with driving chip.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further include a lid, and this lid is configured on first surface, and lid covers MEMS sensor chip.In other embodiments, aforesaid lid can be a conductive cover, and this conductive cover is passed through circuit base plate and is electrically connected with driving chip.
In one embodiment of this invention, above-mentioned circuit base plate can further include at least one privates being simultaneously revealed on first surface and second surface, and privates is electrically connected with conductive cover.
In sum, in the MEMS sensor chip of the present invention encapsulates, the first wire due to being electrically connected with driving chip is only revealed on first surface, and be only revealed on second surface with the second wire of driving chip electric connection, therefore, the MEMS sensor chip encapsulation of the present invention is less susceptible to be affected by electrostatic, and encapsulation yield is higher.
Features described above and advantage for enabling the present invention become apparent, and especially exemplified by embodiment, and coordinate institute's accompanying drawings to be described in detail below.
Brief description
Fig. 1 a and Fig. 1 b is the schematic diagram of the MEMS sensor chip encapsulation according to first embodiment of the invention.
Fig. 2 a and Fig. 2 b is the schematic diagram of the MEMS sensor chip encapsulation according to second embodiment of the invention.
Fig. 3 a and Fig. 3 b is the schematic diagram of the MEMS sensor chip encapsulation according to third embodiment of the invention.
Symbol description
100a ~ 100f: MEMS sensor chip encapsulates
110: circuit base plate
110a: first surface
110b: second surface
112: the first wires
114: the second wires
116: privates
118: sound port
120: driving chip
122: the first signal transmission electrodes
124: the second signal transmission electrodes
126: the three signal transmission electrodes
130: MEMS sensor chip
132: cavity
140: conductive projection
150: bonding wire
160: electronic building brick
170: lid
D: distance
Specific embodiment
Fig. 1 a and Fig. 1 b is the schematic diagram of the MEMS sensor chip encapsulation according to first embodiment of the invention.Referring to Fig. 1 a and Fig. 1 b, the MEMS sensor chip encapsulation 100a of the present embodiment includes circuit base plate 110, driving chip 120 and MEMS sensor chip 130.Above-mentioned circuit base plate 110 has the first surface 110a and second surface 110b relative with first surface 110a, and be embedded in driving chip 120 in circuit base plate 110, and driving chip 120 includes at least one first signal transmission electrode 122, at least one second signal transmission electrode 124 and at least one the 3rd signal transmission electrode 126.MEMS sensor chip 130 is configured on the first surface 110a of circuit base plate 110.In the present embodiment, aforesaid circuit base plate can be the printed circuit board (PCB) with multi-layered patterned conductor layer, aforesaid driving chip 120 can be ASIC (asic), and aforesaid MEMS sensor chip 130 can be sound sensing chip.Driving chip 120 is fully to be embedded among circuit base plate 110, and specifically, driving chip 120 is coated by circuit base plate 110 and is not revealed in outer.The circuit base plate 110 of the present embodiment includes at least one the first wire 112 being electrically connected with the first signal transmission electrode 122 of driving chip 120 and at least one the second wire 114 being electrically connected with the second signal transmission electrode 124 of driving chip 120, wherein first wire 112 is only revealed on first surface 110a, and the second wire 114 is only revealed on second surface 110b, and MEMS sensor chip 130 is electrically connected with the first signal transmission electrode 122 of driving chip 120 through the first wire 112 being revealed on first surface 110a.
In the present embodiment, first signal transmission electrode 122, the second signal transmission electrode 124 and the 3rd signal transmission electrode 126 are distributed on the same surface of driving chip 120, generally, driving chip 120 has the first signal transmission electrode 122, the second signal transmission electrode 124 and the 3rd signal transmission electrode 126 surface and be defined as its active surface.First signal transmission electrode 122 can be signal input electrode, second signal transmission electrode 124 can be signal output electrode, and the 3rd signal transmission electrode 126 can be ground electrode, and the 3rd signal transmission electrode (i.e. ground electrode) 126 can be electrically connected on the second surface 110b of circuit base plate 110.Hold above-mentioned, the 3rd signal transmission electrode (i.e. ground electrode) 126 in the present embodiment can be electrically connected with the second wire 114 of part.In other words, the 3rd signal transmission electrode (i.e. ground electrode) 126 signal being transmitted can be transmitted to the second surface 110b of circuit base plate 110 by the second wire 114 of part, to reach the purpose of ground connection.
It should be noted that first wire 112 of the present embodiment is only revealed on first surface 110a, it is not revealed on second surface 110b；And second wire 114 of the present embodiment is only revealed on second surface 110b, it is not revealed on first surface 110a.In other words, aforesaid first wire 112 and the second wire 114 are not all revealed on first surface 110a and second surface 110b simultaneously.In encapsulation process, when buildup of static electricity to a certain degree produce electric discharge phenomena when, because the first wire 112 and the second wire 114 are not all revealed on first surface 110a and second surface 110b simultaneously, therefore driving chip 120 is subjected to static discharge and damaged probability can be greatly reduced.This field has quantity and the kenel that usually intellectual can change the first wire 112 and the second wire 114 according to actual design demand, and the present embodiment does not limit quantity and the kenel of the first wire 112 and the second wire 114.
As shown in Fig. 1 a and Fig. 1 b, in addition to the first wire 112 and the second wire 114, circuit base plate 110 in the present embodiment can further include at least one privates 116 being simultaneously revealed on first surface 110a and second surface 110b, and privates 116 and the electrical independence of driving chip 120.This field has quantity and the kenel that usually intellectual can change privates 116 according to actual design demand, and the present embodiment does not limit quantity and the kenel of privates 116.
In order that MEMS sensor chip 130 can sense the sound coming from circuit base plate 110 side, the circuit base plate 110 of the present embodiment optionally has a sound port 118, and MEMS sensor chip 130 has a cavity 132, and sound port 118 corresponds to cavity 132.In the present embodiment, the cavity 132 of MEMS sensor chip 130 includes backboard (back plate) and vibrating diaphragm (diaphragm), maintains a gap between its dorsulum and vibrating diaphragm.The vibrational energy of sound can be converted to electric signal by MEMS sensor chip 130, and this can be read by the first wire 112, driving chip 120 and circuit base plate 110 from electric signal produced by MEMS sensor chip 130.
Because driving chip 120 is the inside being fully embedded in circuit base plate 110; one therefore can be maintained between the sound port 118 of driving chip 120 and circuit base plate 110 specifically apart from d; outside this may insure that driving chip 120 will not be revealed in circuit base plate 110 apart from d, so that driving chip 120 obtains the protection of appropriateness.
As shown in Figure 1a, the MEMS sensor chip encapsulation 100a of the present embodiment can further include multiple conductive projections 140, wherein conductive projection 140 is located between MEMS sensor chip 130 and circuit base plate 110, and MEMS sensor chip 130 is to be electrically connected with circuit base plate 110 and driving chip 120 so that flip (flip-chip bonding) mode passes through conductive projection 140.MEMS sensor chip 130 can have multiple weld pad (bonding
Pads), the weld pad of a part be can pass through the conductive projection 140 of part and the first wire 112 and is electrically connected with the driving chip 120 in circuit base plate 110, and the conductive projection 140 that the weld pad of another part can pass through another part is electrically connected with circuit substrate 110.For example, aforesaid conductive projection 140 can be Solder Bumps (solder bumps), golden projection (gold
Bumps), conductive polymer projection (polymer conductive bumps) etc., the present embodiment is not limited.
As shown in Figure 1 b, the MEMS sensor chip encapsulation 100b of the present embodiment can further include multiple bonding wires 150, and MEMS sensor chip 130 is electrically connected with circuit base plate 110 through bonding wire 150.In detail, MEMS sensor chip 130 can have multiple weld pads, the weld pad of a part be can pass through the bonding wire 150 of part and the first wire 112 and is electrically connected with the driving chip 120 in circuit base plate 110, and the bonding wire 150 that the weld pad of another part can pass through another part is electrically connected with circuit substrate 110.For example, aforesaid bonding wire 150 can be gold thread (gold wires) etc., and right the present embodiment is not limited.
Fig. 2 a and Fig. 2 b is the schematic diagram of the MEMS sensor chip encapsulation according to second embodiment of the invention.Refer to Fig. 2 a and Fig. 2 b, it is similar with MEMS sensor chip encapsulation 100a, 100b of first embodiment that the MEMS sensor chip of the present embodiment encapsulates 100c, 100d, it is in place of two embodiment Main Differences: MEMS sensor chip encapsulation 100c, 100d further include an electronic building brick 160, and this electronic building brick 160 is configured on the first surface 110a of circuit base plate 100, and electronic building brick 160 is electrically connected with driving chip 120 through circuit base plate 110.In the present embodiment, aforesaid electronic building brick 160 is, for example, the passive component such as resistance, electric capacity, inductance, and the present embodiment is not limited.
As shown in Fig. 2 a and Fig. 2 b, aforesaid electronic building brick 160 can be electrically connected with through the first wire 112 on first surface 110a and the second signal transmission electrode (i.e. signal output electrode) 124 of driving chip 120.In addition, electronic building brick 160 also can be electrically connected with the privates 116 of circuit base plate 110, so that the signal that the second signal transmission electrode 124 of driving chip 120 is exported can be transferred on the second surface 110b of circuit base plate 110 via the first wire 112, electronic building brick 160 and privates 116.
Fig. 3 a and Fig. 3 b is the schematic diagram of the MEMS sensor chip encapsulation according to third embodiment of the invention.Referring to Fig. 3 a and Fig. 3 b, it is similar with MEMS sensor chip encapsulation 100a, 100b of first embodiment that the MEMS sensor chip of the present embodiment encapsulates 100e, 100f, it is in place of two embodiment Main Differences: MEMS sensor chip encapsulation 100e, 100f further include a lid 170, and this lid 170 is configured on the first surface 110a of circuit base plate 100, and cover MEMS sensor chip 130.
For example, aforesaid lid 170 can be a conductive cover, and this conductive cover is electrically connected with driving chip 120 through circuit base plate 110, to shield noise.In other feasible embodiments, conductive cover 170 can be electrically connected with the ground path (such as privates 116) in circuit base plate 110, to shield noise.Additionally, conductive cover 170 is also optionally electrically connected with the signal circuit of circuit base plate 110, with transmitting signals.It should be noted that in the present embodiment, the first wire 112 of the 3rd signal transmission electrode (i.e. ground electrode) the 126 such as permeation parts of driving chip 120 is connected with conductive cover 170, and conductive cover 170 is connected with privates 116 again.In other words, the 3rd signal transmission electrode 126 can pass through the first wire 114, conductive cover 170 and the privates 116 of part, to reach the purpose of ground connection.In other words, the 3rd signal transmission electrode (i.e. ground electrode) 126 of aforesaid driving chip 120 is to be grounded through conductive cover 170.
In other feasible embodiments, the 3rd signal transmission electrode (i.e. ground electrode) 126 of driving chip 120 also can be directed through the second wire 114 being only revealed on second surface 100b and be electrically connected on the second surface 110b of circuit base plate 110 and (do not illustrate), to reach the purpose of ground connection.Additionally, the conductive cover 170 of the present embodiment can be electrically connected on the second surface 110b of circuit base plate 110 through the privates 116 in circuit base plate 110, to reach the purpose of ground connection.In other words, the 3rd signal transmission electrode (i.e. ground electrode) 126 of aforesaid driving chip 120 and conductive cover 170 are ground connection out of the ordinary.
In each embodiment (the first to 3rd embodiment) stated before this invention, the first wire 112 due to being electrically connected with driving chip 120 is only revealed on first surface 110a, and be only revealed on second surface 110b with the second wire 114 of driving chip 120 electric connection, therefore, the probability that the MEMS sensor chip encapsulation 100a ~ 100f of the present invention is subject to electrostatic discharge effect and damages can decline, therefore encapsulation yield can obtain a certain degree of lifting.
Although the present invention is disclosed above with embodiment; so it is not limited to the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; when can make a little change and retouching, therefore protection scope of the present invention is when being defined by the scope that claims are defined.
Claims (15)
1. a kind of MEMS sensor chip encapsulation, comprising:
One circuit base plate, has first surface and the second surface relative with first surface；
One driving chip, is inside embedded in circuit base plate, and driving chip includes at least one first signal transmission electrode, at least one second signal transmission electrode and at least one the 3rd signal transmission electrode；And
One MEMS sensor chip, it is configured on the first surface of circuit base plate, wherein circuit base plate include at least one and first signal transmission electrode be electrically connected with the first wire and at least one with second signal transmission electrode electric connection the second wire, first wire is only revealed on this first surface, and the second wire is only revealed on this second surface, and MEMS sensor chip passes through the first wire and the first signal transmission electrode is electrically connected with.
2. MEMS sensor chip encapsulation as claimed in claim 1, wherein circuit base plate includes at least one privates being simultaneously revealed on this first surface and this second surface, and this privates is electrically independent with this driving chip.
3. MEMS sensor chip encapsulation as claimed in claim 1, wherein circuit base plate has Yi Yinbu (sound port), and MEMS sensor chip has a cavity, and sound port corresponds to this cavity.
4. MEMS sensor chip encapsulation as claimed in claim 3, wherein driving chip is embedded in inside this circuit base plate, and maintains certain distance between this driving chip and sound port.
5. MEMS sensor chip encapsulation as claimed in claim 1, wherein this driving chip includes an integrated circuit.
6. MEMS sensor chip encapsulation as claimed in claim 1, the wherein first signal transmission electrode, the second signal transmission electrode and the 3rd signal transmission electrode are distributed on the same surface of driving chip.
7. MEMS sensor chip encapsulation as claimed in claim 1, the wherein first signal transmission electrode is signal input electrode, and the second signal transmission electrode is signal output electrode, and the 3rd signal transmission electrode is ground electrode.
8. MEMS sensor chip encapsulation as claimed in claim 7, the wherein the 3rd signal transmission electrode is on the second surface be electrically connected to circuit base plate.
9. MEMS sensor chip encapsulation as claimed in claim 1, wherein MEMS sensor chip includes a sound sensing chip.
10. MEMS sensor chip encapsulation as claimed in claim 1, including multiple conductive projections, wherein MEMS sensor chip is to pass through these conductive projections in flip mode to be electrically connected with circuit base plate.
11. MEMS sensor chip encapsulation as claimed in claim 1, including multiple bonding wires, wherein MEMS sensor chip is passed through these bonding wires and is electrically connected with this circuit base plate.
12. MEMS sensor chip encapsulation as claimed in claim 1, including an electronic building brick, are configured on this first surface, wherein this electronic building brick is passed through this circuit base plate and is electrically connected with this driving chip.
13. MEMS sensor chip encapsulation as claimed in claim 1, including a lid, lid is configured on first surface, and wherein this lid covers this MEMS sensor chip.
14. MEMS sensor chip encapsulation as claimed in claim 13, wherein lid is a conductive cover, and conductive cover is passed through this circuit base plate and is electrically connected with this driving chip.
15. MEMS sensor chip encapsulation as claimed in claim 14, wherein circuit base plate includes at least one privates being simultaneously revealed on this first surface and this second surface, and this privates is electrically connected with this conductive cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510402853.2A CN106340507B (en) | 2015-07-10 | 2015-07-10 | The encapsulation of MEMS sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510402853.2A CN106340507B (en) | 2015-07-10 | 2015-07-10 | The encapsulation of MEMS sensor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106340507A true CN106340507A (en) | 2017-01-18 |
| CN106340507B CN106340507B (en) | 2019-04-19 |
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| CN201510402853.2A Expired - Fee Related CN106340507B (en) | 2015-07-10 | 2015-07-10 | The encapsulation of MEMS sensor chip |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120087521A1 (en) * | 2010-10-12 | 2012-04-12 | Analog Devices, Inc. | Microphone Package with Embedded ASIC |
| TW201325261A (en) * | 2011-12-01 | 2013-06-16 | Ind Tech Res Inst | MEMS acoustic transducer and method for manufacturing the same |
| TW201336321A (en) * | 2012-02-22 | 2013-09-01 | Merry Electronics Co Ltd | MEMS microphone module |
| CN104244154A (en) * | 2013-06-18 | 2014-12-24 | 美商楼氏电子有限公司 | Open Cavity Substrate in a MEMS Microphone Assembly and Method of Manufacturing the Same |
-
2015
- 2015-07-10 CN CN201510402853.2A patent/CN106340507B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120087521A1 (en) * | 2010-10-12 | 2012-04-12 | Analog Devices, Inc. | Microphone Package with Embedded ASIC |
| TW201325261A (en) * | 2011-12-01 | 2013-06-16 | Ind Tech Res Inst | MEMS acoustic transducer and method for manufacturing the same |
| TW201336321A (en) * | 2012-02-22 | 2013-09-01 | Merry Electronics Co Ltd | MEMS microphone module |
| CN104244154A (en) * | 2013-06-18 | 2014-12-24 | 美商楼氏电子有限公司 | Open Cavity Substrate in a MEMS Microphone Assembly and Method of Manufacturing the Same |
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| CN106340507B (en) | 2019-04-19 |
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