CN106340507B - The encapsulation of MEMS sensor chip - Google Patents
The encapsulation of MEMS sensor chip Download PDFInfo
- Publication number
- CN106340507B CN106340507B CN201510402853.2A CN201510402853A CN106340507B CN 106340507 B CN106340507 B CN 106340507B CN 201510402853 A CN201510402853 A CN 201510402853A CN 106340507 B CN106340507 B CN 106340507B
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- Prior art keywords
- sensor chip
- mems sensor
- base plate
- signal transmission
- circuit base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- Micromachines (AREA)
Abstract
The invention discloses a kind of encapsulation of MEMS sensor chip comprising circuit base plate, driving chip and MEMS sensor chip.Circuit base plate has first surface and second surface, is embedded in circuit base plate in driving chip, and driving chip includes at least one first signal transmission electrode, at least one second signal transmission electrode and an at least third signal transmission electrode.MEMS sensor chip is configured on the first surface of circuit base plate.Circuit base plate include at least one and first signal transmission electrode be electrically connected the first conducting wire and at least one with second signal transmission electrode electric connection the second conducting wire, first conducting wire is only revealed on first surface, second conducting wire is only revealed on second surface, and MEMS sensor chip is electrically connected through the first conducting wire and the first signal transmission electrode.MEMS sensor chip encapsulation provided by the invention solves the problems, such as the pilot's cause encapsulation yield decline that shows a film since driving chip is susceptible to static electricity not vulnerable to electrostatic influence.
Description
Technical field
The present invention relates to a kind of chip packages, in particular to a kind of MEMS (Micro-Electro-
Mechanical System, MEMS) sensor chip encapsulation.
Background technique
With the development of science and technology electronic product is without the trend development not towards lightweight and micromation.By taking microphone as an example,
MEMS sensor chip (MEMS sensors) has been widely used in this field.Traditional microphone includes microcomputer
Electric system sensor chip, the driving chip to drive MEMS sensor chip and to carry MEMS sensing
The circuit board of chip and driving chip.Circuit board also has some conductive through holes other than conductive layer and dielectric layer
(conductive through via), and the driving chip in microphone would generally be electrically connected with these conductive through holes.?
In the encapsulation process of MEMS sensor chip, when buildup of static electricity is to a certain degree and when generating electric discharge phenomena, due to driving
Chip and these conductive through holes are electrically connected, therefore driving chip is highly susceptible to the influence of static discharge and is compromised, in turn
Lead to the decline for encapsulating yield.
In conclusion effectively promoting MEMS sensor chip how the case where significantly not changing encapsulation procedure
Encapsulation yield, actually current research staff one of wants to solve the problems, such as.
Summary of the invention
The present invention provides a kind of MEMS sensor chip encapsulation, is less susceptible to by electrostatic influence.
MEMS sensor chip encapsulation of the invention, including circuit base plate, driving chip and micro-electro-mechanical systems togetherness
Survey chip.Circuit base plate has first surface and the second surface opposite with first surface, and route is embedded in driving chip
In substrate, and driving chip includes at least one first signal transmission electrode, at least one second signal transmission electrode and at least 1 the
Three signal transmission electrodes.MEMS sensor chip is configured on the first surface of circuit base plate.Circuit base plate includes at least
One and first signal transmission electrode be electrically connected the first conducting wire and at least one with second signal transmission electrode electric connection
Second conducting wire, the first conducting wire is only revealed on first surface, and the second conducting wire is only revealed on second surface, and MEMS
Sensor chip is electrically connected through the first conducting wire and the first signal transmission electrode.
In one embodiment of this invention, above-mentioned circuit base plate can further comprise at least one while be revealed in the first table
Privates on face and second surface, and privates and driving chip are electrically independent.
In one embodiment of this invention, above-mentioned circuit base plate has a sound port (sound port), and micro-electro-mechanical systems
Sensor chip of uniting has a cavity, and sound port corresponds to cavity.
In one embodiment of this invention, above-mentioned driving chip is inside circuit base plate, and driving chip and sound end
A distance is maintained between mouthful.
In one embodiment of this invention, above-mentioned driving chip is, for example, special application integrated circuit (Application
Specific Integrated Circuit, ASIC).
In one embodiment of this invention, above-mentioned MEMS sensor chip is, for example, sound sensing chip.
In one embodiment of this invention, the first above-mentioned signal transmission electrode, the second signal transmission electrode and third news
Number transmission electrode is distributed on the same surface of driving chip.
In one embodiment of this invention, the first above-mentioned signal transmission electrode is signal input electrode, and the second signal passes
Transmission of electricity extremely signal output electrode, and third signal transmission electrode is grounding electrode.
In one embodiment of this invention, above-mentioned third signal transmission electrode is be electrically connected to circuit base plate second
On surface.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further comprise multiple conductions
Convex block, wherein MEMS sensor chip is to be electrically connected with rewinding method through conductive bump and circuit base plate.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further comprise multiple welderings
Line, wherein MEMS sensor chip is electrically connected through bonding wire and circuit base plate.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further comprise an electronics group
Part, electronic building brick are configured on first surface, and electronic building brick is electrically connected through circuit base plate and driving chip.
In one embodiment of this invention, above-mentioned MEMS sensor chip encapsulation can further comprise a lid,
This lid is configured on first surface, and lid covers MEMS sensor chip.In other embodiments, lid above-mentioned
It can be a conductive cover, and this conductive cover is electrically connected through circuit base plate and driving chip.
In one embodiment of this invention, above-mentioned circuit base plate can further comprise at least one while be revealed in the first table
Privates on face and second surface, and privates and conductive cover are electrically connected.
In conclusion in MEMS sensor chip encapsulation of the invention, due to what is be electrically connected with driving chip
First conducting wire is only revealed on first surface, and the second conducting wire being electrically connected with driving chip is only revealed on second surface,
Therefore, MEMS sensor chip of the invention encapsulation is less susceptible to the influence by electrostatic, and encapsulation yield is higher.
To enable features described above and advantage of the invention to be clearer and more comprehensible, spy is for embodiment, and it is detailed to cooperate institute's accompanying drawings to make
Carefully it is described as follows.
Detailed description of the invention
Figure 1A and Figure 1B is the schematic diagram encapsulated according to the MEMS sensor chip of first embodiment of the invention.
Fig. 2A and Fig. 2 B is the schematic diagram encapsulated according to the MEMS sensor chip of second embodiment of the invention.
Fig. 3 A and Fig. 3 B is the schematic diagram encapsulated according to the MEMS sensor chip of third embodiment of the invention.
Symbol description
100a ~ 100f: MEMS sensor chip encapsulation
110: circuit base plate
110a: first surface
110b: second surface
112: the first conducting wires
114: the second conducting wires
116: privates
118: sound port
120: driving chip
122: the first signal transmission electrodes
124: the second signal transmission electrodes
126: third signal transmission electrode
130: MEMS sensor chip
132: cavity
140: conductive bump
150: bonding wire
160: electronic building brick
170: lid
D: distance
Specific embodiment
Figure 1A and Figure 1B is the schematic diagram encapsulated according to the MEMS sensor chip of first embodiment of the invention.It please be same
When A and Figure 1B referring to Fig.1, the MEMS sensor chip encapsulation 100a of the present embodiment includes circuit base plate 110, driving chip
120 and MEMS sensor chip 130.Above-mentioned circuit base plate 110 has first surface 110a and and first surface
110a opposite second surface 110b, and be embedded in driving chip 120 in circuit base plate 110, and driving chip 120 includes at least
One first signal transmission electrode 122, at least one second signal transmission electrode 124 and at least a third signal transmission electrode 126.It is micro-
Mechatronic Systems sensor chip 130 is configured on the first surface 110a of circuit base plate 110.In the present embodiment, route above-mentioned
Substrate can be the printed circuit board with multi-layered patterned conductor layer, and driving chip 120 above-mentioned can be the integrated electricity of special applications
Road (ASIC), and MEMS sensor chip 130 above-mentioned can be sound sensing chip.Driving chip 120 is fully embedding
Among circuit base plate 110, specifically, driving chip 120 is coated by circuit base plate 110 without outside being revealed in.This implementation
The circuit base plate 110 of example includes the first conducting wire of at least one with the first signal transmission electrode 122 electric connection of driving chip 120
112 and at least one the second conducting wire 114 for being electrically connected with the second signal transmission electrode 124 of driving chip 120, wherein first
Conducting wire 112 is only revealed on first surface 110a, and the second conducting wire 114 is only revealed on second surface 110b, and micro-electro-mechanical systems
System sensor chip 130 is transmitted through the first signal of the first conducting wire 112 and driving chip 120 that are revealed on first surface 110a
Electrode 122 is electrically connected.
In the present embodiment, the first signal transmission electrode 122, the second signal transmission electrode 124 and third signal transmission electricity
Pole 126 is distributed on the same surface of driving chip 120, in general, on driving chip 120 have the first signal transmission electrode 122,
Second signal transmission electrode 124 and 126 surface of third signal transmission electrode are defined as its active surface.First signal transmission electricity
Pole 122 can be signal input electrode, and the second signal transmission electrode 124 can be signal output electrode, and third signal transmission electrode
126 can be grounding electrode, and third signal transmission electrode (i.e. grounding electrode) 126 can be electrically connected to the of circuit base plate 110
On two surface 110b.Hold above-mentioned, the third signal transmission electrode (i.e. grounding electrode) 126 in the present embodiment can be with the second of part
Conducting wire 114 is electrically connected.In other words, the signal that third signal transmission electrode (i.e. grounding electrode) 126 is transmitted can pass through part
The second conducting wire 114 be transmitted on the second surface 110b of circuit base plate 110, to reach the purpose of ground connection.
It is worth noting that, first conducting wire 112 of the present embodiment is only revealed on first surface 110a, it is not revealed in second
On the 110b of surface；And second conducting wire 114 of the present embodiment is only revealed on second surface 110b, is not revealed in first surface 110a
On.In other words, the first conducting wire 112 above-mentioned and the second conducting wire 114 are not all revealed in first surface 110a and second surface simultaneously
On 110b.In encapsulation process, when buildup of static electricity is to when generating electric discharge phenomena to a certain degree, due to the first conducting wire 112 and
Two conducting wires 114 are not all revealed on first surface 110a and second surface 110b simultaneously, therefore driving chip 120 is by electrostatic
Electric discharge and damaged probability can be greatly reduced.This field tool usually intellectual can change the according to actual design demand
The quantity and kenel of one conducting wire 112 and the second conducting wire 114, the present embodiment do not limit the number of the first conducting wire 112 and the second conducting wire 114
Amount and kenel.
Route base as shown in Figure 1A and Figure 1B, other than the first conducting wire 112 and the second conducting wire 114, in the present embodiment
Plate 110 can further comprise at least one while the privates 116 that is revealed on first surface 110a and second surface 110b, and
Privates 116 and driving chip 120 are electrically independent.This field has usually intellectual can according to actual design demand and more
The quantity and kenel of dynamic privates 116, the present embodiment do not limit the quantity and kenel of privates 116.
In order to enable MEMS sensor chip 130 to sense the sound from 110 side of circuit base plate, the present embodiment
Circuit base plate 110 optionally have a sound port 118, and MEMS sensor chip 130 have a cavity 132, and
Sound port 118 corresponds to cavity 132.In the present embodiment, the cavity 132 of MEMS sensor chip 130 includes backboard
(back plate) and vibrating diaphragm (diaphragm), maintains a gap between dorsulum and vibrating diaphragm.MEMS senses core
The vibrational energy of sound can be converted to electric signal by piece 130, and this electric signal meeting caused by the MEMS sensor chip 130
It is read by the first conducting wire 112, driving chip 120 and circuit base plate 110.
Since driving chip 120 is the inside for being fully embedded in circuit base plate 110, driving chip 120 and route base
Maintaining one between the sound port 118 of plate 110, specifically distance D, this distance D may insure that driving chip 120 will not be revealed in line
Except base board 110, so that driving chip 120 obtains appropriate protection.
As shown in Figure 1A, the MEMS sensor chip encapsulation 100a of the present embodiment can further comprise multiple conductive studs
Block 140, wherein conductive bump 140 is between MEMS sensor chip 130 and circuit base plate 110, and MEMS
Sensor chip 130 be in a manner of flip (flip-chip bonding) through conductive bump 140 and with circuit base plate 110 and
Driving chip 120 is electrically connected.MEMS sensor chip 130 can have multiple weld pads (bonding pads), a part
Weld pad can pass through part conductive bump 140 and the first conducting wire 112 and with the electricity of driving chip 120 in circuit base plate 110
Property connection, and the weld pad of another part can pass through another part conductive bump 140 and circuit substrate 110 be electrically connected.Citing
For, conductive bump 140 above-mentioned can lead for Solder Bumps (solder bumps), golden convex block (gold bumps), macromolecule
Electric convex block (polymer conductive bumps) etc., the present embodiment is not limited.
As shown in Figure 1B, the MEMS sensor chip encapsulation 100b of the present embodiment can further comprise multiple bonding wires
150, and MEMS sensor chip 130 is electrically connected through bonding wire 150 and circuit base plate 110.In detail, MEMS
Sensor chip 130 can have multiple weld pads, a part of weld pad can pass through part bonding wire 150 and the first conducting wire 112 and with
Driving chip 120 in circuit base plate 110 is electrically connected, and the weld pad of another part can pass through the bonding wire 150 of another part with
Circuit substrate 110 is electrically connected.For example, bonding wire 150 above-mentioned can be gold thread (gold wires) etc., and right the present embodiment is not
As limit.
Fig. 2A and Fig. 2 B is the schematic diagram encapsulated according to the MEMS sensor chip of second embodiment of the invention.It please join
According to Fig. 2A and Fig. 2 B, the micro-electro-mechanical systems of the encapsulation of MEMS sensor chip 100c, 100d and first embodiment of the present embodiment
Togetherness survey chip package 100a, 100b is similar, is in place of two embodiment main differences: the encapsulation of MEMS sensor chip
100c, 100d further comprise an electronic building brick 160, and this electronic building brick 160 is configured at the first surface of circuit base plate 100
On 110a, and electronic building brick 160 is electrically connected through circuit base plate 110 and driving chip 120.In the present embodiment, above-mentioned
Electronic building brick 160 is, for example, that passive components, the present embodiment such as resistance, capacitor, inductance are not limited.
As shown in Fig. 2A and Fig. 2 B, electronic building brick 160 above-mentioned be can be through first be located on first surface 110a
Second signal transmission electrode (i.e. signal output electrode) 124 of conducting wire 112 and driving chip 120 is electrically connected.In addition, electronics group
Part 160 can be also electrically connected with the privates 116 of circuit base plate 110, so that the second signal transmission electrode of driving chip 120
124 signals exported can be transferred to circuit base plate via the first conducting wire 112, electronic building brick 160 and privates 116
On 110 second surface 110b.
Fig. 3 A and Fig. 3 B is the schematic diagram encapsulated according to the MEMS sensor chip of third embodiment of the invention.It please be same
When referring to Fig. 3 A and Fig. 3 B, the microcomputer of the encapsulation of MEMS sensor chip 100e, 100f and first embodiment of the present embodiment
Electric system sensor chip encapsulation 100a, 100b is similar, is in place of two embodiment main differences: MEMS sensor chip envelope
Filling 100e, 100f further comprises a lid 170, and this lid 170 is configured on the first surface 110a of circuit base plate 100,
And cover MEMS sensor chip 130.
For example, lid 170 above-mentioned can be a conductive cover, and this conductive cover through circuit base plate 110 and is driven
Dynamic chip 120 is electrically connected, to shield noise.In other feasible embodiments, conductive cover 170 can be with circuit base plate 110
Interior ground path (such as privates 116) is electrically connected, to shield noise.In addition, conductive cover 170 is also optionally
It is electrically connected with the signal circuit of circuit base plate 110, with transmitting signals.It is worth noting that, in the present embodiment, driving chip
The first conducting wire 112 and the conductive cover 170 of 120 126 such as permeation parts of third signal transmission electrode (i.e. grounding electrode) connect
It connects, and conductive cover 170 is connect with privates 116 again.In other words, third signal transmission electrode 126 can pass through the of part
One conducting wire 114, conductive cover 170 and privates 116, to reach the purpose of ground connection.In other words, driving chip above-mentioned
120 third signal transmission electrode (i.e. grounding electrode) 126 is grounded through conductive cover 170.
In other feasible embodiments, the third signal transmission electrode (i.e. grounding electrode) 126 of driving chip 120 also may be used
The second surface for being directed through the second conducting wire 114 being only revealed on second surface 100b and being electrically connected to circuit base plate 110
110b upper (not being painted), to reach the purpose of ground connection.In addition, the conductive cover 170 of the present embodiment can penetrate circuit base plate 110
In privates 116 and be electrically connected on the second surface 110b of circuit base plate 110, to reach the purpose of ground connection.Change speech
It, the third signal transmission electrode (i.e. grounding electrode) 126 of driving chip 120 above-mentioned is distinctly to be grounded with conductive cover 170.
In each embodiment (first to 3rd embodiment) stated before this invention, due to electrically connecting with driving chip 120
The first conducting wire 112 connect is only revealed on first surface 110a, and the second conducting wire 114 being electrically connected with driving chip 120 is only
It is revealed on second surface 110b, therefore, MEMS sensor chip encapsulation 100a ~ 100f of the invention is by static discharge
The probability for influencing and damaging can decline, therefore a degree of promotion can be obtained by encapsulating yield.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any technical field
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, thus it is of the invention
Protection scope when being subject to the range that claims are defined.
Claims (14)
1. a kind of MEMS sensor chip encapsulation, comprising:
One circuit base plate has first surface and the second surface opposite with first surface；
One driving chip, is inside embedded in circuit base plate, and driving chip includes at least one first signal transmission electrode, at least one second
Signal transmission electrode and at least a third signal transmission electrode；And
One MEMS sensor chip, is configured on the first surface of circuit base plate, wherein circuit base plate include at least one with
First signal transmission electrode be electrically connected the first conducting wire and at least one with second signal transmission electrode electric connection second
Conducting wire, the first conducting wire is only revealed on the first surface, and the second conducting wire is only revealed on the second surface, and MEMS
Sensor chip is electrically connected through the first conducting wire and the first signal transmission electrode；
Wherein circuit base plate includes at least one while the privates that is revealed on the first surface and the second surface, and this
Three wires and the driving chip are electrically independent.
2. MEMS sensor chip encapsulation as described in claim 1, wherein circuit base plate has a sound port (sound
Port), MEMS sensor chip has a cavity, and sound port corresponds to the cavity.
3. MEMS sensor chip encapsulation as claimed in claim 2, wherein driving chip is embedded in inside the circuit base plate,
And certain distance is maintained between the driving chip and sound port.
4. MEMS sensor chip encapsulation as described in claim 1, wherein the driving chip includes an integrated circuit.
5. MEMS sensor chip encapsulation as described in claim 1, wherein the first signal transmission electrode, the second signal pass
Transmission pole and third signal transmission electrode are distributed on the same surface of driving chip.
6. MEMS sensor chip encapsulation as described in claim 1, wherein the first signal transmission electrode is signal input
Electrode, the second signal transmission electrode is signal output electrode, and third signal transmission electrode is grounding electrode.
7. MEMS sensor chip encapsulation as claimed in claim 6, wherein third signal transmission electrode is to be electrically connected
Onto the second surface of circuit base plate.
8. MEMS sensor chip encapsulation as described in claim 1, wherein MEMS sensor chip includes a sound
Sound sensor chip.
9. MEMS sensor chip as described in claim 1 encapsulates, including multiple conductive bumps, wherein MEMS
Sensor chip is to be electrically connected with rewinding method through these conductive bumps and circuit base plate.
10. MEMS sensor chip as described in claim 1 encapsulates, including multiple bonding wires, wherein micro-electro-mechanical systems togetherness
Chip is surveyed to be electrically connected through these bonding wires and the circuit base plate.
11. MEMS sensor chip encapsulation as described in claim 1, including an electronic building brick, are configured at first table
On face, wherein the electronic building brick is electrically connected through the circuit base plate and the driving chip.
12. MEMS sensor chip encapsulation as described in claim 1, including a lid, lid are configured at first surface
On, wherein the lid covers the MEMS sensor chip.
13. MEMS sensor chip as claimed in claim 12 encapsulation, wherein lid is a conductive cover, and conductive cap
Body is electrically connected through the circuit base plate and the driving chip.
14. MEMS sensor chip encapsulation as claimed in claim 13, wherein circuit base plate includes at least one aobvious simultaneously
The privates being exposed on the first surface and the second surface, and the privates and the conductive cover are electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510402853.2A CN106340507B (en) | 2015-07-10 | 2015-07-10 | The encapsulation of MEMS sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510402853.2A CN106340507B (en) | 2015-07-10 | 2015-07-10 | The encapsulation of MEMS sensor chip |
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| Publication Number | Publication Date |
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| CN106340507A CN106340507A (en) | 2017-01-18 |
| CN106340507B true CN106340507B (en) | 2019-04-19 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104244154A (en) * | 2013-06-18 | 2014-12-24 | 美商楼氏电子有限公司 | Open Cavity Substrate in a MEMS Microphone Assembly and Method of Manufacturing the Same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9407997B2 (en) * | 2010-10-12 | 2016-08-02 | Invensense, Inc. | Microphone package with embedded ASIC |
| TWI504279B (en) * | 2011-12-01 | 2015-10-11 | Ind Tech Res Inst | Mems acoustic transducer and method for manufacturing the same |
| TWI573469B (en) * | 2012-02-22 | 2017-03-01 | 美律實業股份有限公司 | Mems microphone module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104244154A (en) * | 2013-06-18 | 2014-12-24 | 美商楼氏电子有限公司 | Open Cavity Substrate in a MEMS Microphone Assembly and Method of Manufacturing the Same |
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