CN106340323A - Programming method for MTM antifuse PROM - Google Patents
Programming method for MTM antifuse PROM Download PDFInfo
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- CN106340323A CN106340323A CN201610693862.6A CN201610693862A CN106340323A CN 106340323 A CN106340323 A CN 106340323A CN 201610693862 A CN201610693862 A CN 201610693862A CN 106340323 A CN106340323 A CN 106340323A
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- Prior art keywords
- programming
- programmed
- antifuse
- programming pulse
- prom
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- Read Only Memory (AREA)
Abstract
The invention relates to a programming method for MTM (metal-to-metal) antifuse PROM (Programmable Read-Only Memory). The method comprises the following steps: carrying out programming pre-charging before applying each programming pulse on antifuse which is to be programmed; giving a PROM circuit a thermal relaxation time after completing the last programming pulse and before applying the next programming pulse; grouping the programming pulse for two in one group, carrying out programmable current Ipp detection during the secondary programming pulse of each group of programming pulse, and carrying out the byte data reading verification after completing each group of programming pulse; and carrying out full data reading verification after completing all byte-programming. By the programming method, error programming of the antifuse can be effectively avoided, and programming success rate of a chip is raised. By optimizing the programming algorithm, reliability of the antifuse PROM circuit is raised after programming.
Description
Technical field
The invention belongs to programmable antifuse technical field, it is related to a kind of programmed method being applied to mtm antifuse prom.
Background technology
Antifuse is a kind of very important programmable interconnection cell.Mtm (metal-to-metal) antifuse is wide
It is applied to field programmable gate array (fieldprogrammable gatearray, fpga) and programmable storage generally
In (programmable read-onlymemory, prom).In concrete integrated circuit, anti-fuse cell is located at top-level metallic
Between n-layer and n-1 layer metal, antifuse is in off state before programming, by the fuel factor of program current to anti-
Fuse is programmed, and after programming, antifuse is changed into conducting state by off state, forms low resistance and connects.
Antifuse manufacture needs special process, and only external fewer companies have grasped this technology at present.Due to mtm antifuse
Important function, domestic also gradually carried out inclusion mtm antifuse technology, mtm anti-fuse circuit designing technique, test skill
The research of key technology and the researches of technique such as art, programmed method, programmable device designing technique.
Mtm antifuse prom is a kind of highly reliable nonvolatile memory, is often used as astrionic system Program generation
Code and the storage of other key messages.Due to its special application, abroad such circuit is often in embargo to domestic
State, and carry out blockade on new techniques.The present invention gives a kind of being applied to is melted based on domestic 0.18 μm of more ripe mtm is counter
The programmed method of the prom circuit of silk technological design.
Content of the invention
The technical problem to be solved in the present invention is to overcome existing defect, provides a kind of mtm antifuse prom that is applied to
Programmed method, solves the problems, such as programming by mistake in mtm antifuse prom programming process, improves the programming success rate of chip, improve
The reliability of antifuse prom circuit after programming.
In order to solve above-mentioned technical problem, the invention provides following technical scheme:
A kind of programmed method being applied to mtm antifuse prom of the present invention, comprising: programmable device is successfully connected with prom circuit
Connect；Suitable programmed algorithm is selected according to the prom circuit model reading；To the sky piece inspection of prom circuit；Programmable device is according to loading
Data prom circuit will being programmed and corresponding address be programmed addressing, also include: counter melted to program
Silk is first programmed being pre-charged before applying each programming pulse；After the completion of a upper programming pulse, apply next programming
First give prom circuit certain thermal relaxation time before pulse；Programming pulse is grouped, two one group, is programmed at each group
During second programming pulse of pulse, it is programmed electric current ipp detection, and after the completion of each group of programming pulse, carries out
This byte data reads checking；After the completion of to the programming of all bytes, carry out full sheet digital independent verification.
Further, before programming pulse, pre-charge pressure is identical with program voltage numerical value, and numerical value all exists for programming precharge
Between 8v～10v.
Further, programming pulse time width is 2 times of programming precharge time width, wherein programs precharge time
In 3ms～5ms, programming pulse time width is in 6ms～10ms.
Further, the thermal relaxation time width between two programming pulses is identical with programming precharge time width, its
Thermal relaxation time between middle programming pulse is 3ms～5ms.
Further, in programming process, program current detects second programming pulse in each group of programming pulse each time
At 2/3 time of width.
Further, in programming process, byte data reads verification after second thermal relaxation time each time, then
Carry out byte and read verification.
Compared with the present invention and tradition programmed method to mtm antifuse prom, in addition to being programmed according to byte-by-byte,
Have the advantages that
1st, in order to avoid antifuse is programmed by mistake, apply programming pulse before, increased programming pre-charging stage, make with
The bottom electrode that the antifuse to be programmed is in other all antifuse of same row fills certain voltage with.
2nd, increased thermal relaxation time between two programming pulses, prevent antifuse from crossing programming, and then after raising programming
Antifuse reliability, when preventing from programming, chip overheating burns circuit or makes the unreliable of programming process change simultaneously.
3rd, judge whether antifuse programs successfully: programming pulse is grouped, two one group, in every group of programming pulse
During second programming pulse, it is programmed electric current ipp detection, and after the completion of each group of programming pulse, carries out this byte
Digital independent is verified；Program current ipp detection data reads two links of checking and all must pass through, and could judge this antifuse
Program successfully, enter next byte programming, otherwise continue to organize programming pulse to next, until verifying by or reaching maximum
Programming number of times.
4th, judge whether chip programs successfully: it is necessary to through full sheet digital independent school after the completion of to the programming of all bytes
Test, after verification is passed through, chip programming success could be judged.
5th, adopt the programmed method of the present invention, antifuse can be effectively prevented from and programmed by mistake, lift being programmed to of chip
Power, by optimizing programmed algorithm, improves the reliability of antifuse prom circuit after programming.
Brief description
Fig. 1 is the installation drawing of antifuse in programming mtm antifuse prom；
Fig. 2 is program timing sequence figure mtm antifuse prom circuit being programmed using the present invention；
Fig. 3 is flow chart mtm antifuse prom circuit being programmed using the present invention.
Specific embodiment
Embodiment cited by the present invention, is only intended to help and understands the present invention, should not be construed as protecting model to the present invention
The restriction enclosed, for those skilled in the art, without departing from the inventive concept of the premise, can also be right
The present invention makes improvements and modifications, and these improve and modification also falls in the range of the claims in the present invention protection.
As shown in figure 1, the right is the mtm antifuse prom circuit 1 comprising antifuse f1～f6, wherein f1～f6 is counter melting
Silk, m1～m6 is programming current limiting tube, and n1～n6 is precharge control pipe.Antifuse f1～f6 initial state is off state, and it is right to be intended to
Certain antifuse is programmed, and it is anti-to mtm that mtm antifuse prom programmable device 2 passes through five ports of adr, dq, pen, cen, oen
Fuse prom circuit 1 applies signal, opens corresponding w (w1～w2) by the addressing within circuit and programmed circuit 11 and switchs simultaneously
And apply appropriate precharge pulse and programming pulse on bit (bit1～bit3) line, complete antifuse programming.
In order to avoid antifuse is programmed by mistake, before applying programming pulse, increased programming pre-charging stage, make and be intended to
The bottom electrode of other all antifuse that the antifuse of programming is in same row fills certain voltage with.As shown in Fig. 2 being by scheming
What 1 left side mtm antifuse prom programmable device 2 produced is applied to program timing sequence on mtm antifuse prom circuit 1 on the right of Fig. 1.Preliminary filling
Electric pulse and programming pulse are provided by pen port by mtm antifuse prom programmable device 2.During the low pulse of t0, by address end
Signal on mouth adr data port dq is latched, depending on the time cycle of t0 is according to concrete mtm antifuse prom circuit 1,
Can be set as 500us.
After the completion of address data latches, enter the t1 stage, to other institutes being in same row with the antifuse to be programmed
The bottom electrode having antifuse enters line precharge, and pre-charge pressure is 8v～10v, the addressing according within mtm antifuse prom circuit 1
With programmed circuit 11 structure, using the pre-charge pressure of 8v～10v, reach the pre-charge pressure of antifuse bottom electrode 4.1v～
4.5v, t1 precharge time in stage is generally 3ms～5ms.
After the completion of precharge, enter t2 stage, i.e. antifuse programming phases, programming pulse voltage is 8v～10v, according to
Addressing within mtm antifuse prom circuit 1 and programmed circuit 11 structure, using the programming pulse voltage of 8v～10v, reach anti-
The voltage of the Top electrode of fuse is 6.5v～8v, the anti-fuse cell characteristic being provided according to the mtm antifuse processing line setting,
At 6v (± 0.5v), the t2 phase programming pulse time is generally 2 times of precharge time to mtm antifuse breakdown voltage, that is, 6ms～
10ms.Disclosure satisfy that antifuse punctures requirement using the program voltage of this 6.5v～8v, and pre-charge pressure is unlikely to melt to counter
Silk causes to program by mistake.
For example, antifuse f1 is programmed, first passes through the addressing within mtm antifuse prom circuit 1 and programming electricity
Precharge switch pre (now all w turn off) is opened on road 11, by bit1, d1 and d4 node is entered with line precharge (now bit2
It is 0v with bit3)；After the completion of precharge, turn off precharge switch pre, open w1 (now w2 turns off), apply to compile by bit1
Journey pulse is programmed (now bit2 and bit3 be 0v) to antifuse f1, due to preliminary filling voltage before d4 node, effectively anti-
Stop the mistake programming to antifuse f4.
After the completion of first programming pulse voltage, antifuse has typically completed to program, in order to antifuse can fully be compiled
Journey, needs to carry out to apply a programming pulse (strengthening programming) again, but before applying second programming pulse, need to
The certain thermal relaxation time of mtm antifuse prom circuit 1, i.e. the t3 stage.The thermal relaxation time in t3 stage is generally programming pulse
The half of time, i.e. 3ms～5ms.And then the t3 stage, carry out second programming in addition it is also necessary to enter line precharge, i.e. the t4 stage,
Time is as t1.It is simply that programming phases after the completion of being pre-charged for second, it is to be divided into two stage t5 and t6, t5 this stage
Time be time of 2/3, t6 of t2 be the 1/3 of t2.Carry out antifuse programming in the finish time of t5 and the start time of t6
Current detecting (current threshold is ith), current values are up to standard to be that antifuse programs one of successful necessary condition.Complete the t6 stage
Afterwards, through the thermal relaxation time in t7 stage, enter the t8 stage, to being programmed that byte carries out read check.To being programmed that byte
Read check be successfully to judge that this byte programs one of successful necessary condition.
As shown in figure 3, being flow chart mtm antifuse prom circuit being programmed using the present invention.The first step it is desirable to
Programmable device carry out engaged test it is ensured that prom circuit with programming successful connection；Second step, and then carries out prom after engaged test
The reading of circuit model, selects suitable programmed algorithm according to circuit model；3rd step, carries out sky piece inspection to prom circuit,
Guarantee that the prom circuit to be programmed is that blank does not have data；4th step, programmable device loading will be programmed to prom circuit
Data and corresponding address；5th step, according to the data loading and address, is programmed addressing；6th step, according to Fig. 2's
Program timing sequence, applies precharge pulse to the bottom electrode of other all antifuse being in same row with the antifuse to be programmed,
Apply programming pulse in the antifuse Top electrode to be programmed；7th step, according to the program timing sequence of Fig. 2, is programmed electric current and reading
Take verification, after program current detection (ipp > ith) and reading verification are all passed through, judge that this antifuse programs successfully, otherwise,
According to above method, continue to precharge pulse and programming pulse, until meeting program current detection and reading verification bar
Part, record program current ipp and reading data, enter next byte programming or reach the maximum times making a reservation for program and end
Only program, and record last program current and read data；After completing the programming of last byte antifuse, to chip
Carry out full sheet and read checking, if the verification passes, judge chip programming success, otherwise, provide chip programming failure information.
Claims (6)
1. a kind of programmed method being applied to mtm antifuse prom, comprising: programmable device is successfully connected with prom circuit；According to reading
The prom circuit model taking selects suitable programmed algorithm；To the sky piece inspection of prom circuit；Programmable device is right according to load
The data that prom circuit is programmed and corresponding address are programmed addressing it is characterised in that also including: to be programmed
Antifuse is first programmed being pre-charged before applying each programming pulse；After the completion of a upper programming pulse, apply next
First give prom circuit certain thermal relaxation time before programming pulse；Programming pulse is grouped, two one group, at each group
During second programming pulse of programming pulse, it is programmed electric current ipp detection, and after the completion of each group of programming pulse,
Carry out this byte data and read checking；After the completion of to the programming of all bytes, carry out full sheet digital independent verification.
2. the programmed method being applied to mtm antifuse prom according to claim 1 it is characterised in that: described programming is pre-
Charged before programming pulse, pre-charge pressure is identical with program voltage numerical value, and numerical value is all between 8v～10v.
3. the programmed method being applied to mtm antifuse prom according to claim 1 is it is characterised in that described programming arteries and veins
Rush 2 times that time width is programming precharge time width, wherein programming precharge time in 3ms～5ms, programming pulse time
Width is in 6ms～10ms.
4. the programmed method being applied to mtm antifuse prom according to claim 1 is it is characterised in that described two volume
Thermal relaxation time width between journey pulse is identical with programming precharge time width, during thermal relaxation wherein between programming pulse
Between be 3ms～5ms.
5. the programmed method being applied to mtm antifuse prom according to claim 1 is it is characterised in that described programmed
In journey, program current detected at 2/3 time of second programming pulse width of each group of programming pulse each time.
6. the programmed method being applied to mtm antifuse prom according to claim 1 is it is characterised in that described programmed
In journey, byte data reads verification after second thermal relaxation time each time, then carries out byte and read verification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610693862.6A CN106340323B (en) | 2016-08-19 | 2016-08-19 | A kind of programmed method suitable for MTM antifuse PROM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610693862.6A CN106340323B (en) | 2016-08-19 | 2016-08-19 | A kind of programmed method suitable for MTM antifuse PROM |
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| Publication Number | Publication Date |
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| CN106340323A true CN106340323A (en) | 2017-01-18 |
| CN106340323B CN106340323B (en) | 2019-08-20 |
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| CN201610693862.6A Active CN106340323B (en) | 2016-08-19 | 2016-08-19 | A kind of programmed method suitable for MTM antifuse PROM |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111125000A (en) * | 2019-12-12 | 2020-05-08 | 中国电子科技集团公司第五十八研究所 | Programming method of MTM antifuse FPGA |
| CN112242378A (en) * | 2019-07-16 | 2021-01-19 | 南亚科技股份有限公司 | Method for fusing anti-fuse element |
| CN114113991A (en) * | 2021-11-19 | 2022-03-01 | 中国电子科技集团公司第五十八研究所 | Anti-fuse type FPGA anti-fuse null-seeking test design circuit and method |
| CN112242378B (en) * | 2019-07-16 | 2024-05-10 | 南亚科技股份有限公司 | Method for blowing anti-fuse element |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242378A (en) * | 2019-07-16 | 2021-01-19 | 南亚科技股份有限公司 | Method for fusing anti-fuse element |
| CN112242378B (en) * | 2019-07-16 | 2024-05-10 | 南亚科技股份有限公司 | Method for blowing anti-fuse element |
| CN111125000A (en) * | 2019-12-12 | 2020-05-08 | 中国电子科技集团公司第五十八研究所 | Programming method of MTM antifuse FPGA |
| CN114113991A (en) * | 2021-11-19 | 2022-03-01 | 中国电子科技集团公司第五十八研究所 | Anti-fuse type FPGA anti-fuse null-seeking test design circuit and method |
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| Publication number | Publication date |
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| CN106340323B (en) | 2019-08-20 |
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