CN106340323B - A kind of programmed method suitable for MTM antifuse PROM - Google Patents
A kind of programmed method suitable for MTM antifuse PROM Download PDFInfo
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- CN106340323B CN106340323B CN201610693862.6A CN201610693862A CN106340323B CN 106340323 B CN106340323 B CN 106340323B CN 201610693862 A CN201610693862 A CN 201610693862A CN 106340323 B CN106340323 B CN 106340323B
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- programmed
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- programming pulse
- antifuse
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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Abstract
The present invention relates to a kind of programmed methods suitable for MTM antifuse PROM, comprising: precharge is first programmed before applying each programming pulse to the antifuse to be programmed；After the completion of a upper programming pulse, thermal relaxation time first certain to PROM circuit before applying next programming pulse；Programming pulse is grouped, two one group, during second programming pulse of each group of programming pulse, is programmed electric current Ipp detection, and after the completion of each group of programming pulse, carries out the byte data and read verifying；After the completion of programming to all bytes, the verification of full sheet reading data is carried out.Using programmed method of the invention, antifuse can be effectively prevented from and accidentally programmed, promote the programming success rate of chip, by optimizing programmed algorithm, improve the reliability of antifuse PROM circuit after programming.
Description
Technical field
The invention belongs to programmable antifuse technical fields, are related to a kind of programmed method suitable for MTM antifuse PROM.
Background technique
Antifuse is a kind of very important programmable interconnection cell.MTM (metal-to-metal) antifuse is wide
It is applied to field programmable gate array (FieldProgrammable GateArray, FPGA) and programmable storage generally
In (Programmable Read-OnlyMemory, PROM).In specific integrated circuit, anti-fuse cell is located at top-level metallic
Between N layers and N-1 layers of metal, antifuse be before programming it is in an off state, by the fuel factor of program current to anti-
Fuse is programmed, and antifuse is changed on state by off state after programming, forms low resistance connection.
Antifuse manufacture needs special process, and only external fewer companies have grasped the technology at present.Due to MTM antifuse
Important function, the country also gradually carried out including MTM antifuse technology, MTM anti-fuse circuit designing technique, test skill
The research and research of technique of the key technologies such as art, programmed method, programmable device designing technique.
MTM antifuse PROM is a kind of highly reliable nonvolatile memory, is often used as program generation in astrionic system
The storage of code and other key messages.Due to its special application field, external such circuit is often to the country in embargo
State, and carry out technology blockage.The present invention gives a kind of suitable for melting based on domestic 0.18 μm of more mature MTM is counter
The programmed method of the PROM circuit of silk technological design.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the existing defects, provides a kind of suitable for MTM antifuse PROM's
Programmed method solves the problems, such as to miss programming in MTM antifuse PROM programming process, improves the programming success rate of chip, improves
The reliability of antifuse PROM circuit after programming.
In order to solve the above-mentioned technical problems, the present invention provides the following technical solutions:
A kind of programmed method suitable for MTM antifuse PROM of the present invention, comprising: programmable device successfully connects with PROM circuit
It connects；Programmed algorithm appropriate is selected according to the PROM circuit model of reading；To PROM circuit sky piece inspection；Programmable device is according to load
Addressing is programmed to the data and corresponding address that PROM circuit is programmed, further includes: it is anti-molten to what is programmed
Silk is first programmed precharge before applying each programming pulse；After the completion of a upper programming pulse, apply next programming
Thermal relaxation time first certain to PROM circuit before pulse；Programming pulse is grouped, two one group, in each group of programming
During second programming pulse of pulse, it is programmed electric current Ipp detection, and after the completion of each group of programming pulse, is carried out
The byte data reads verifying；After the completion of programming to all bytes, the verification of full sheet reading data is carried out.
Further, programming precharge is before programming pulse, and pre-charge pressure is identical as program voltage numerical value, and numerical value exists
Between 8V~10V.
Further, programming pulse time width is 2 times for programming precharge time width, wherein programming precharge time
In 3ms~5ms, programming pulse time width is in 6ms~10ms.
Further, the thermal relaxation time width between two programming pulses and programming precharge time are of same size,
Thermal relaxation time between middle programming pulse is 3ms~5ms.
Further, second programming pulse of the program current detection each time in each group of programming pulse in programming process
At 2/3 time of width.
Further, byte data reads verification after second thermal relaxation time each time in programming process, then
It carries out byte and reads verification.
The present invention is compared with tradition is to the programmed method of MTM antifuse PROM, other than being programmed according to byte-by-byte,
It has the advantages that
1, in order to avoid antifuse is accidentally programmed, before applying programming pulse, increase programming pre-charging stage, make with
The lower electrode that the antifuse to be programmed is in other all antifuse of same row fills certain voltage with.
2, thermal relaxation time is increased between two programming pulses, prevents antifuse from crossing programming, and then after raising programming
Antifuse reliability, while preventing chip overheating when programming from burning circuit or programming process is made to become unreliable.
3, judge whether antifuse programs success: programming pulse is grouped, two one group, in every group of programming pulse
During second programming pulse, it is programmed electric current Ipp detection, and after the completion of each group of programming pulse, carries out the byte
Reading data verifying；Program current Ipp detection and reading data, which verify two links, must all pass through, and could judge the antifuse
It programs successfully, is programmed into next byte, otherwise continued to next group of programming pulse, until verification passes through or reaches maximum
Program number.
4, judge whether chip programs success: after the completion of programming to all bytes, it is necessary to pass through full sheet reading data school
It tests, after verification passes through, could judge chip programming success.
5, using programmed method of the invention, antifuse can be effectively prevented from and accidentally programmed, being programmed to for chip is promoted
Power improves the reliability of antifuse PROM circuit after programming by optimizing programmed algorithm.
Detailed description of the invention
Fig. 1 is the device figure for programming antifuse in MTM antifuse PROM；
Fig. 2 is the program timing sequence figure being programmed using the present invention to MTM antifuse PROM circuit；
Fig. 3 is the flow chart being programmed using the present invention to MTM antifuse PROM circuit.
Specific embodiment
Embodiment cited by the present invention, is merely used to help understand the present invention, should not be construed as protecting model to the present invention
The restriction enclosed for those skilled in the art without departing from the inventive concept of the premise, can also be right
The present invention makes improvements and modifications, these improvement and modification are also fallen into the range of the claims in the present invention protection.
As shown in Figure 1, the right is the MTM antifuse PROM circuit 1 comprising antifuse F1~F6, wherein F1~F6 is anti-molten
Silk, M1~M6 are programming current limiting tube, and N1~N6 is preliminary filling electric control pipe.Antifuse F1~F6 initial state is off state, is intended to pair
Some antifuse is programmed, and MTM antifuse PROM programmable device 2 is anti-to MTM by five ports ADR, DQ, PEN, CEN, OEN
Fuse PROM circuit 1 applies signal, opens corresponding w (w1~w2) switch simultaneously by addressing inside circuit and programmed circuit 11
And apply suitable precharge pulse and programming pulse on bit (bit1~bit3) line, complete antifuse programming.
In order to avoid antifuse is accidentally programmed, before applying programming pulse, programming pre-charging stage is increased, makes and is intended to
The lower electrode that the antifuse of programming is in other all antifuse of same row fills certain voltage with.As shown in Fig. 2, for by scheming
What 1 left side MTM antifuse PROM programmable device 2 generated is applied on the right of Fig. 1 program timing sequence on MTM antifuse PROM circuit 1.Preliminary filling
Electric pulse and programming pulse are provided by MTM antifuse PROM programmable device 2 by the port PEN.During the low pulse of t0, by address end
Signal on mouthful ADR and data port DQ is latched, the time cycle of t0 depending on specific MTM antifuse PROM circuit 1,
It can be set as 500us.
After the completion of address and data latch, into the t1 stage, to other institutes for being in same row with the antifuse to be programmed
There is the lower electrode of antifuse to be pre-charged, pre-charge pressure is 8V~10V, according to the addressing inside MTM antifuse PROM circuit 1
With 11 structure of programmed circuit, using the pre-charge pressure of 8V~10V, reach the pre-charge pressure of electrode under antifuse 4.1V~
4.5V, t1 precharge time in stage are generally 3ms~5ms.
After the completion of precharge, into t2 stage, i.e. antifuse programming phases, programming pulse voltage is 8V~10V, according to
11 structure of addressing and programmed circuit inside MTM antifuse PROM circuit 1 is reached anti-using the programming pulse voltage of 8V~10V
The voltage of the top electrode of fuse be 6.5V~8V, according to the MTM antifuse processing line of setting provide anti-fuse cell characteristic,
For MTM antifuse breakdown voltage at 6V (± 0.5V), the t2 phase programming pulse time is generally 2 times of precharge time, i.e. and 6ms~
10ms.It can satisfy antifuse breakdown using the program voltage of the 6.5V~8V to require, and pre-charge pressure is unlikely to anti-molten
Silk causes accidentally to program.
For example, being programmed to antifuse F1, pass through the addressing inside MTM antifuse PROM circuit 1 and programming electricity first
Precharge switch PRE (all w shutdowns at this time) are opened on road 11, are pre-charged (bit2 at this time to d1 and d4 node by bit1
It is 0V with bit3)；After the completion of precharge, precharge switch PRE is turned off, w1 (w2 is turned off at this time) is opened, is applied by bit1 and compiled
Journey pulse pair antifuse F1 is programmed (at this time bit2 and bit3 be 0V), effectively anti-due to preliminary filling voltage before d4 node
The mistake programming to antifuse F4 is stopped.
After the completion of first programming pulse voltage, antifuse has generally been completed to program, in order to which antifuse can be compiled sufficiently
Journey needs to carry out to apply programming pulse (strengthening programming) again, but before applying second programming pulse, need to
The certain thermal relaxation time of MTM antifuse PROM circuit 1, i.e. t3 stage.The thermal relaxation time in t3 stage is generally programming pulse
The half of time, i.e. 3ms~5ms.And then the t3 stage carries out second and programs, it is also necessary to it is pre-charged, i.e. the t4 stage,
Time is as t1.It is exactly programming phases, only the stage is divided into two stages t5 and t6, t5 after the completion of second is pre-charged
Time be time of 2/3, t6 of t2 be the 1/3 of t2.Antifuse programming is carried out at the beginning of the finish time of t5 and t6
Current detecting (current threshold Ith), current values up to standard are that antifuse programs one of successful necessary condition.Complete the t6 stage
Afterwards, by the thermal relaxation time in t7 stage, into the t8 stage, read check is carried out to programmed byte.To programmed byte
Read check be successfully to judge that the byte programs one of successful necessary condition.
As shown in figure 3, for the flow chart being programmed using the present invention to MTM antifuse PROM circuit.The first step, it is desirable that
Programmable device carries out engaged test, it is ensured that PROM circuit and programming successful connection；And then second step carries out PROM after engaged test
The reading of circuit model selects programmed algorithm appropriate according to circuit model；Third step carries out empty piece inspection to PROM circuit,
The PROM circuit for ensuring to be programmed is that blank does not have data；4th step, programmable device load will be programmed PROM circuit
Data and corresponding address；5th step is programmed addressing according to the data of load and address；6th step, according to fig. 2
Program timing sequence applies precharge pulse to the lower electrode for other all antifuse for being in same row with the antifuse to be programmed,
Apply programming pulse in the antifuse top electrode to be programmed；7th step, program timing sequence according to fig. 2, is programmed electric current and reading
Verification is taken, after program current detects (Ipp > Ith) and reading verification passes through, judges that the antifuse programs successfully, otherwise,
According to above method, precharge pulse and programming pulse are continued to, until meeting program current detection and reading verification item
Part records program current Ipp and reads data, into the programming of next byte or reaches the predetermined maximum times programmed and end
It only programs, and records last time program current and read data；After completing the programming of the last byte antifuse, to chip
It carries out full sheet and reads verifying, if the verification passes, judge chip programming success, otherwise, provide chip programming failure information.
Claims (6)
1. a kind of programmed method suitable for MTM antifuse PROM, comprising: programmable device is successfully connected with PROM circuit；According to reading
The PROM circuit model taken selects programmed algorithm appropriate；To PROM circuit sky piece inspection；Programmable device is according to the right of load
The data and corresponding address that PROM circuit is programmed are programmed addressing, which is characterized in that further include: to what is programmed
Antifuse is first programmed precharge before applying each programming pulse；After the completion of a upper programming pulse, apply next
Thermal relaxation time first certain to PROM circuit before programming pulse；Programming pulse is grouped, two one group, at each group
During second programming pulse of programming pulse, it is programmed electric current Ipp detection, and after the completion of each group of programming pulse,
Byte data in being programmed reads verifying；After the completion of programming to all bytes, the verification of full sheet reading data is carried out.
2. the programmed method according to claim 1 suitable for MTM antifuse PROM, it is characterised in that: the programming is pre-
Charging is before programming pulse, and pre-charge pressure is identical as program voltage numerical value, and numerical value is between 8V~10V.
3. the programmed method according to claim 1 suitable for MTM antifuse PROM, which is characterized in that the programming arteries and veins
Rushing time width is 2 times for programming precharge time width, wherein programming precharge time is in 3ms~5ms, programming pulse time
Width is in 6ms~10ms.
4. the programmed method according to claim 1 suitable for MTM antifuse PROM, which is characterized in that described two volumes
Thermal relaxation time width between journey pulse and programming precharge time are of same size, wherein when thermal relaxation between programming pulse
Between be 3ms~5ms.
5. the programmed method according to claim 1 suitable for MTM antifuse PROM, which is characterized in that described programmed
Program current detection each time is at 2/3 time of second programming pulse width of each group of programming pulse in journey.
6. the programmed method according to claim 1 suitable for MTM antifuse PROM, which is characterized in that described programmed
Byte data reads verification after second thermal relaxation time each time in journey, then carries out byte and read verification.
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| CN201610693862.6A CN106340323B (en) | 2016-08-19 | 2016-08-19 | A kind of programmed method suitable for MTM antifuse PROM |
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| CN201610693862.6A CN106340323B (en) | 2016-08-19 | 2016-08-19 | A kind of programmed method suitable for MTM antifuse PROM |
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| CN106340323A CN106340323A (en) | 2017-01-18 |
| CN106340323B true CN106340323B (en) | 2019-08-20 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10803966B1 (en) * | 2019-07-16 | 2020-10-13 | Nanya Technology Corporation | Method of blowing an antifuse element |
| CN111125000A (en) * | 2019-12-12 | 2020-05-08 | 中国电子科技集团公司第五十八研究所 | Programming method of MTM antifuse FPGA |
| CN114113991A (en) * | 2021-11-19 | 2022-03-01 | 中国电子科技集团公司第五十八研究所 | Anti-fuse type FPGA anti-fuse null-seeking test design circuit and method |
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| US7538598B1 (en) * | 2004-11-24 | 2009-05-26 | Actel Corporation | Circuit and method for supplying programming potential at voltages larger than BVDss of programming transistors |
| CN101755306A (en) * | 2007-07-18 | 2010-06-23 | 株式会社东芝 | A resistance change memory device and programming method thereof |
| CN103022042A (en) * | 2011-09-23 | 2013-04-03 | 权义弼 | Highly integrated programmable non-volatile memory and manufacturing method thereof |
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