CN106329146B - A kind of flexibility Terahertz Meta Materials wave absorbing device and preparation method thereof - Google Patents
A kind of flexibility Terahertz Meta Materials wave absorbing device and preparation method thereof Download PDFInfo
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- CN106329146B CN106329146B CN201610813900.7A CN201610813900A CN106329146B CN 106329146 B CN106329146 B CN 106329146B CN 201610813900 A CN201610813900 A CN 201610813900A CN 106329146 B CN106329146 B CN 106329146B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention discloses a kind of flexible Terahertz Meta Materials wave absorbing devices and preparation method thereof；The wave absorbing device from top to bottom successively includes metallic film, one layer of flexible media film and the one layer of continuous metallic film of a layer pattern；The production method of the wave absorbing device are as follows: deposit one layer of continuous metallic film on a surface of flexible media film；Patterned coverage film is covered on another surface of flexible media film, then another layer of metallic film is deposited on surface, film will be covered again to separate with flexible media film, be obtained on another surface of flexible media film with the patterned metallic film with coverage film complementary patterns.Flexible Terahertz Meta Materials wave absorbing device of the invention has the characteristics that flexible, telescopic, it can be bent by applying external force, thus change its absorption coefficient, therefore its Terahertz response performance can easily be adjusted, and production method of the invention is simple, and made coverage film can be used repeatedly.
Description
Technical field
The invention belongs to Terahertz Technology field, it is related to a kind of flexible Terahertz Meta Materials wave absorbing device and preparation method thereof.
Background technique
THz wave (THz) is often referred to the electromagnetic wave that frequency is 0.1-10THz, has some unique physical characteristics, such as
High permeability, it is possible to apply the field of non destructive testing in safety check or quality check process；Low energy, not will lead to photoionization and
Analyte is destroyed, is highly suitable for for fields such as the biopsies of human body or other biological sample；Fingerprint spectrality, therefore terahertz
Hereby spectral imaging technology can differentiate the pattern of object, identify the component of object, the physicochemical properties of object analysis.Exactly by
In the advantage of THz wave uniqueness, it is increasingly becoming international research hot spot, Terahertz basis and application achievements are all given in countries in the world
Great concern is given.
It is a kind of with not available for natural material due to being difficult to search out effective Terahertz responsive materials in nature
The artificial composite structure of extraordinary electromagnetic response property, i.e. electromagnetism Meta Materials (Metamaterial, abbreviation Meta Materials), increasingly draw
Play academia and industry it is extensive pay attention to (referring to R.M.Walser, " Electromagnetic matematerials ",
Proc.SPIE, 2001,4467,1-15 document).Using Meta Materials, it is perfect that perfect lens, stealthy cape, electromagnetic wave may be implemented
The particular devices such as absorber, perfect filter are (referring to Zheludev N I, " The road ahead for
Metamaterials ", Science, 2010,328 (5978), 582-583 document).
Regrettably, traditional Meta Materials once prepare completion, are only capable of generating response (referring to Tao to the THz of specific wavelength
H,Bingham C M,Strikwerda A C,et al.,“Highly flexible wide angle of incidence
terahertz metamaterial absorber:design,fabrication,and characterization”,
Phys.Rev.B 2008,78 (24), 241103 documents).If it is desired to which the THz wave to different frequencies generates absorption, then
It needs to redesign, preparation.Moreover, the preparation of Terahertz Meta Materials is usually to pass through traditional photoetching, technological parameter
With the change of litho pattern, there are difference.Relevant Meta Materials redesign and preparation process is comparatively laborious.Therefore, ability
Domain, which is urgently developed, prepares more simple and regulatable Terahertz Meta Materials wave absorbing device.
Summary of the invention
An object of the present invention provides a kind of flexible Terahertz Meta Materials wave absorbing device, can to Terahertz response characteristic into
Row is adjusted.
The second object of the present invention provides a kind of production method of flexible Terahertz Meta Materials wave absorbing device, production method letter
It is single, and reusable material.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of flexibility Terahertz Meta Materials wave absorbing device, the wave absorbing device from top to bottom successively include the metal of a layer pattern
Film, one layer of flexible media film and one layer of continuous metallic film；The metallic pattern of the patterned metallic film is presented
For Terahertz response pattern.
The metallic pattern of the patterned metallic film is not particularly limited, and can be Terahertz response known in the industry
The periodic structure figure of one or more of one of figure, such as square, round and ellipse mixing shape.
The metallic film is not particularly limited, such as aluminium (Al), gold (Au), titanium (Ti), titanium nitride (TiNx), titanium silicide
(TiSix), titanium-tungsten (TiWx), tungsten (W), tungsten silicide (WSix), tungsten nitride (WNx), nickel (Ni), nickle silicide (NiSix), nitridation
Nickel (NiNx), tantalum (Ta), tantalum nitride (TaNx), iron (Fe), platinum (Pt), copper (Cu), silver-colored (Ag), chromium (Cr) and nichrome
One or more of (NiCr) compound, metallic film with a thickness of 5-4000nm.
The flexible media film is not particularly limited, such as polyimides (PI) film, polyethylene (PE) film, poly- third
Alkene (PP) film, polystyrene (PS) film, benzocyclobutene (BCB) film, Parylene (Parylene) film, silicon nitride
(SiNx) film, amorphous silicon (α-Si) film, silicon oxynitride (SiNxOy) film, aluminium oxide (AlOx) film, chromium oxide (CrOx)
Film and chromium oxide aluminium (CrxAlyOne or more of) O compound, flexible media film with a thickness of 1-100 μm, dielectric
Constant is 1-12.
The present invention can be adjusted by Terahertz response characteristic of the curved form of external force to the wave absorbing device: when
When wave absorbing device is bent to underlying metal direction, forms concave surface under external force, relatively not by the response of wave absorbing device when external force
Red shift occurs for frequency, and bending degree is bigger, then red shift is more obvious；When wave absorbing device under external force is to coating metal direction
When bending, formation convex surface, blue shift is not occurred by the response frequency of wave absorbing device when external force relatively, and bending degree is bigger,
Then blue shift is more obvious.
The production method of above-mentioned flexibility Terahertz Meta Materials wave absorbing device: one layer is deposited on a surface of flexible media film
Continuous metallic film；Patterned coverage film is covered on another surface of flexible media film, then on surface
Another layer of metallic film is deposited, then film will be covered and separated with flexible media film, on another surface of flexible media film
On obtain with inhaling wave with the patterned metallic film for covering film complementary patterns to get to the flexible Terahertz Meta Materials
Device.
As a preferred solution of the present invention, the production method comprising the following specific steps
(1) substrate of twin polishing is cleaned, and is dried；
(2) one or more layers amorphous media film is deposited in the one side of substrate；
(3) it in one layer photoresist of surface spin coating of amorphous media film, and toasts；
(4) photoresist is exposed, after development, obtains the periodic structure figure of photoresist；
(5) it uses reactive ion etching amorphous media film and removes remaining photoresist, obtain the tool of amorphous media film
There is the periodic structure figure of one or more of square, round and ellipse mixing shape；
(6) step (2)-(3) are repeated to the another side of substrate；
(7) photoresist is exposed, after development, obtains the fenestration figure of photoresist；
(8) it uses reactive ion etching amorphous media film and removes remaining photoresist, obtain opening for amorphous media film
Window construction figure；
(9) lithographic method is used, the exposed substrate of fenestration figure that step (8) obtains is performed etching, is had
There are the amorphous media film of periodic structure figure, i.e., patterned coverage film；
(10) flexible media film is cleaned, and is dried；
(11) one layer of continuous metallic film is deposited on a surface of flexible media film；
(12) patterned coverage film prepared by step (9) is covered on another surface of flexible media film,
Then another layer of metallic film is deposited on surface；
(13) film will be covered to separate with flexible media film, is had on another surface of flexible media film
With the patterned metallic film of covering film complementary patterns to get to the flexible Terahertz Meta Materials wave absorbing device.
Preferred embodiment as above-mentioned production method:
The substrate is monocrystalline substrate；When step (9) use dry etching, the substrate is silicon (100), silicon
(111) and one of silicon (110) monocrystalline substrate；When step (9) use wet etching, the substrate is that silicon (100) are single
Crystalline silicon substrate, the corrosive liquid used is the KOH aqueous solution that concentration is 1wt.% -60wt.%, using water-bath, oil bath or air bath
The reaction temperature of wet etching is controlled, range of reaction temperature is 30-120 DEG C, and the time of wet etching is 0.5-20h.
The amorphous media film is one or more of silicon nitride film, silicon oxide film and silicon oxynitride film
Composite membrane, with a thickness of 10nm-10 μm；In the step (2), the method for deposited amorphous dielectric film is plasma enhancing
Learn vapor deposition, low-pressure chemical vapor deposition, aumospheric pressure cvd, electron beam evaporation, vacuum thermal evaporation and magnetron sputtering
One of system；When using plasma enhance chemical vapor deposition when, working frequency be high frequency, low frequency or high frequency with it is low
Frequency is alternately used in mixed way.
In the step (5) and (8), the reaction gas that reactive ion etching uses is CF4、CHF3、C3F8、SF6And NF3In
One or more.
In the step (5) and (8), the method for the remaining photoresist of removal are as follows: using in acetone, butanone, methanol and ethyl alcohol
One or more of reagents remaining photoresist is removed by ultrasound as adhesive remover.
In the step (11) and (12), the method for deposited metal film is electron beam evaporation, vacuum thermal evaporation, magnetic control splash
One of penetrate with metal-organic chemical vapor deposition equipment.
The beneficial effects of the present invention are:
1, flexible Terahertz Meta Materials wave absorbing device of the invention has the characteristics that flexible, telescopic, can be outer by applying
Power bends, and thus changes Meta Materials parameter, therefore can easily adjust its Terahertz response performance.
2, production method of the invention is simple, and made coverage film can be used repeatedly, and reduces photoetching time
Number, reduces costs, and also makes subsequent preparation more simple.
Detailed description of the invention
Fig. 1 is the schematic diagram of flexible Terahertz Meta Materials wave absorbing device；
Fig. 2 is the pictorial diagram of flexible Terahertz Meta Materials wave absorbing device；
Fig. 3 is the fabrication processing figure of flexible Terahertz Meta Materials wave absorbing device；
Fig. 4 is the photo in kind for covering film；
Fig. 5 is the Terahertz response test result of flexible Terahertz Meta Materials wave absorbing device.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to of the invention excellent
Embodiment is selected to be described in detail.
Fig. 1 is the schematic diagram of the flexible Terahertz Meta Materials wave absorbing device of the present embodiment；Fig. 2 is the flexible terahertz of the present embodiment
The hereby pictorial diagram of Meta Materials wave absorbing device, a are optical microscope photograph, photo when b is bending；As shown, the wave absorbing device by
Successively including 1, one layer of flexible media film 2 of metallic film and one layer of continuous metallic film 3 of a layer pattern under；Institute
The metallic pattern for stating patterned metallic film is rendered as the periodic structure figure of square, and P is 72 μ of square unit period side length
M, a are 52 μm of square side length.
As shown in figure 3, the production method of the flexible Terahertz Meta Materials wave absorbing device of the present embodiment, including walk in detail below
It is rapid:
(1) silicon (100) monocrystalline substrate of twin polishing is cleaned, and is dried；
In this step, cleaning process are as follows: first place the substrate into and be cleaned by ultrasonic 10min in acetone soln；Substrate is taken out, then
It is put into dehydrated alcohol and is cleaned by ultrasonic 10min；Substrate is taken out, then is rinsed 4 times with deionized water, until cleaning up, is finally used
Nitrogen dries up substrate；
(2) using plasma enhancing chemical vapor deposition (PECVD) deposits one layer of amorphous SiN in the one side of substratexIt is situated between
Matter film (as shown in a in Fig. 3)；
In this step, SiN is deposited using PECVDxThe process conditions of film are as follows: RF operating frequency is high frequency
13.56MHz, low frequency 380KHz, the two are used alternatingly；Reaction gas is SiH4And NH3, ventilation flow rate ratio SiH4:NH3=1:
5；Depositing temperature is 250 DEG C；Amorphous SiNxThe deposition thickness of film is 1 μm；
(3) in amorphous SiNxOne layer photoresist of surface spin coating of dielectric film, and toast；
In this step, sample is first placed into 120 DEG C of baking 20min in an oven, removes the moisture on surface；Then, spin coating
Photoresist, and it is placed on 100 DEG C of baking 3min on hot plate；
(4) photoresist is exposed, after development, obtains the periodic structure figure of the square of photoresist (such as b institute in Fig. 3
Show)；
In this step, photoresist is exposed using ultraviolet photolithographic technology, the periodicity of the square of photoresist is obtained after development
Structure graph；
(5) reactive ion etching amorphous SiN is usedxDielectric film simultaneously removes remaining photoresist, obtains amorphous SiNxMedium is thin
The periodic structure figure of the square of film (as shown in c in Fig. 3)；
In this step, reactive ion etching SiNxThe process conditions of film are as follows: etching reaction gas is CHF3, gas flow
For 20sccm, etch rate 60nm/min, etch period 20min；Quarter 20% is spent, so that the SiN that structure graph is exposedxIt is thin
Film is etched completely, until substrate surface；The structure etched is subjected to ultrasound in acetone, removes remaining photoresist；
(6) step (2)-(3) (as shown in d in Fig. 3) is repeated to the another side of substrate；
(7) photoresist is exposed, after development, obtain the fenestration figure of photoresist (as shown in e in Fig. 3)；
In this step, photoresist is exposed using ultraviolet photolithographic technology, the fenestration figure of photoresist is obtained after development；
(8) reactive ion etching amorphous SiN is usedxDielectric film simultaneously removes remaining photoresist, obtains amorphous SiNxMedium is thin
The fenestration figure of film (as shown in f in Fig. 3)；
(9) wet etching method is used, the exposed substrate of fenestration figure that step (8) obtains is performed etching, is obtained
To the amorphous SiN with periodic structure figurexDielectric film, i.e., (as shown in g in Fig. 3, material object is such as patterned coverage film
Shown in Fig. 4)；
In wet etching, exposed substrate is etched away in the middle part of fenestration figure, and fenestration graphic edge is not carved
The SiN of erosionxFilm will prevent substrate from being etched；The substrate not being etched is as frame structure, convenient for subsequent step to wave absorbing device
It is operated；
The process conditions of wet etching are as follows: corrosive liquid is 33.3wt.%KOH aqueous solution, and etching reaction temperature is 75 DEG C；It adopts
Reaction temperature is controlled with water-bath or oil bath, etch period 6h or so finally leaves SiN until substrate etching is completexFilm and silicon
Frame；
(10) flexible media film is cleaned, and is dried；
In this step, cleaning process are as follows: first flexible media film is put into acetone soln and is cleaned by ultrasonic 10min；It takes out
Flexible media film, is then placed in dehydrated alcohol and is cleaned by ultrasonic 10min；Flexible media film is taken out, then is rushed with deionized water
It washes 2 times, until cleaning up, flexible media film is finally dried in aeration cabinet；
(11) magnetron sputtering is used, it is continuous in one layer that a surface deposition thickness of flexible media film is 200nm
Al metallic film (as shown in h and i in Fig. 3)；
(12) patterned coverage film prepared by step (9) is covered on another surface of flexible media film,
Then use magnetron sputtering in surface deposition thickness for another layer of Al metallic film of 200nm (as shown in j and k in Fig. 3)；
(13) film will be covered to separate with flexible media film, is had on another surface of flexible media film
With the patterned Al metallic film of covering film complementary patterns to get to described flexible Terahertz Meta Materials wave absorbing device (such as Fig. 3
Shown in middle l).
It is analyzed as follows, the flexible Terahertz Meta Materials wave absorbing device of provable the present embodiment is bent by applying external force, from
And adjust Terahertz and absorb frequency range, it is the Terahertz filtering wave absorbing device of function admirable.
Using the far infrared component of the Spectrum400 Fourier infrared spectrograph of PerkinElmer company, to embodiment
The flexible Terahertz Meta Materials wave absorbing device of production carries out absorbent properties test.
The actual test of Fig. 5 is not the results show that when by external force, and radius of curvature is infinity, measured suction at this time
The center response frequency of wave device is 4.80THz, " R=∞ " curve shown in Fig. 5；Applying external force makes wave absorbing device to underlying metal direction
Bending forms concave surface, and when radius of curvature is 2.5cm, the center response frequency of measured wave absorbing device is 4.63THz, shown in Fig. 5
“Rin1=2.5 " curves；Same direction increase applies external force, makes wave absorbing device to the bending of underlying metal direction, forms concave surface, and is bent
When rate radius is 1.0cm, the center corresponding frequencies of measured wave absorbing device are 4.57THz, " R shown in Fig. 5in2=1.0 " curves；After
Continue and apply external force in same direction increase, makes wave absorbing device to the bending of underlying metal direction, forms concave surface, and radius of curvature is
When 0.8cm, the center response frequency of measured wave absorbing device is 4.45THz, " R shown in Fig. 5in3=0.8 " curve.
On the other hand, if applying external force, make wave absorbing device to the bending of coating metal direction, form convex surface, and radius of curvature
When for 2.5cm, the center response frequency of measured wave absorbing device is 4.80THz, " Rout shown in Fig. 51=2.5 " curves；Same side
To increase apply external force, make wave absorbing device to coating metal direction bending, formed convex surface, and radius of curvature be 1.0cm when, it is measured
The center response frequency of wave absorbing device is 4.92THz, " Rout shown in Fig. 52=1.0 " curves；Continue to increase and apply external force, makes to inhale wave
Device is bent to coating metal direction, forms convex surface, and when radius of curvature is 0.8cm, the center of measured super wave absorbing device responds frequency
Rate is 5.26THz, " Rout shown in Fig. 53=0.8 " curve.
Fig. 5 the result shows that, when external force make wave absorbing device to underlying metal direction bending, formed concave surface when, relatively not by
Red shift occurs for the response frequency of wave absorbing device when external force, and bending degree is bigger, then red shift is more obvious；When external force makes
When wave absorbing device is bent to coating metal direction, forms convex surface, do not occurred relatively by the response frequency of wave absorbing device when external force blue
It moves, and bending degree is bigger, then blue shift is more obvious.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although passing through ginseng
According to the preferred embodiment of the present invention, invention has been described, it should be appreciated by those of ordinary skill in the art that can
To make various changes to it in the form and details, without departing from the present invention defined by the appended claims
Spirit and scope.
Claims (7)
1. a kind of flexibility Terahertz Meta Materials wave absorbing device, it is characterised in that: the wave absorbing device from top to bottom successively includes one layer of figure
The metallic film of shape, one layer of flexible media film and one layer of continuous metallic film；The gold of the patterned metallic film
Belong to figure and is rendered as Terahertz response pattern；When wave absorbing device is bent to underlying metal direction, forms concave surface under external force,
Red shift is not occurred by the response frequency of wave absorbing device when external force relatively, and bending degree is bigger, then red shift is more obvious；When
When wave absorbing device is bent to coating metal direction, forms convex surface under external force, relatively not by the response of wave absorbing device when external force
Blue shift occurs for frequency, and bending degree is bigger, then blue shift is more obvious；
The flexible media film is Kapton, polyethylene film, polypropylene film, polystyrene film, benzo ring
Butylene film, Parylene film, silicon nitride film, amorphous silicon membrane, silicon oxynitride film, aluminum oxide film, chromium oxide film
With the compound of one or more of chromium oxide aluminium film, flexible media film with a thickness of 1-100 μm, dielectric constant 1-
12；
The metallic pattern of the patterned metallic film is rendered as the periodic structure figure of square, can be bent by external force
Form the Terahertz response characteristic of the wave absorbing device is adjusted: P be 72 μm of square unit period side length, a be square side
It is 52 μm long.
2. flexibility Terahertz Meta Materials wave absorbing device according to claim 1, it is characterised in that: the metallic film be aluminium,
Gold, titanium, titanium nitride, titanium silicide, titanium-tungsten, tungsten, tungsten silicide, tungsten nitride, nickel, nickle silicide, nickel oxide, tantalum, tantalum nitride, iron,
The compound of one or more of platinum, copper, silver, chromium and nichrome, metallic film with a thickness of 5-4000nm.
3. the production method of flexible Terahertz Meta Materials wave absorbing device described in claim 1 to 2 any one, it is characterised in that:
One layer of continuous metallic film is deposited on a surface of flexible media film；Patterned coverage film is covered on flexible Jie
On another surface of matter film, another layer of metallic film then is deposited on surface, then film and flexible media film will be covered
It separates, is obtained on another surface of flexible media film with the patterned metal foil with coverage film complementary patterns
Film is to get to the flexible Terahertz Meta Materials wave absorbing device.
4. the production method of flexibility Terahertz Meta Materials wave absorbing device according to claim 3, it is characterised in that: the production
Method comprising the following specific steps
(1) substrate of twin polishing is cleaned, and is dried；
(2) one or more layers amorphous media film is deposited in the one side of substrate；
(3) it in one layer photoresist of surface spin coating of amorphous media film, and toasts；
(4) photoresist is exposed, after development, obtains the periodic structure figure of photoresist；
(5) it uses reactive ion etching amorphous media film and removes remaining photoresist, obtain amorphous media film as periodically
There is one or more of square, round and ellipse to mix shape for structure graph, the periodic structure figure；
(6) step (2)-(3) are repeated to the another side of substrate；
(7) photoresist is exposed, after development, obtains the fenestration figure of photoresist；
(8) it uses reactive ion etching amorphous media film and removes remaining photoresist, obtain the windowing knot of amorphous media film
Composition shape；
(9) lithographic method is used, the exposed substrate of fenestration figure that step (8) obtains is performed etching, obtains that there is week
The amorphous media film of phase property structure graph, i.e., patterned coverage film；
(10) flexible media film is cleaned, and is dried；
(11) one layer of continuous metallic film is deposited on a surface of flexible media film；
(12) patterned coverage film prepared by step (9) is covered on another surface of flexible media film, then
Another layer of metallic film is deposited on surface；
(13) film will be covered to separate with flexible media film, obtains having and screening on another surface of flexible media film
The patterned metallic film of film complementary patterns is covered to get the flexible Terahertz Meta Materials wave absorbing device is arrived.
5. the production method of flexibility Terahertz Meta Materials wave absorbing device according to claim 4, it is characterised in that: the substrate
For monocrystalline substrate；When step (9) use dry etching, the substrate is one of silicon 100, silicon 111 and silicon 110 monocrystalline
Silicon substrate；When step (9) use wet etching, the substrate is 100 monocrystalline substrate of silicon, and the corrosive liquid used is that concentration is
The KOH aqueous solution of 1wt.% -60wt.%, using the reaction temperature of water-bath, oil bath or air bath control wet etching, reaction temperature
Spending range is 30-120 DEG C, and the time of wet etching is 0.5-20h.
6. the production method of flexibility Terahertz Meta Materials wave absorbing device according to claim 4, it is characterised in that: the amorphous
Dielectric film is the composite membrane of one or more of silicon nitride film, silicon oxide film and silicon oxynitride film, with a thickness of
10nm-10μm；In the step (2), the method for deposited amorphous dielectric film is plasma enhanced chemical vapor deposition, low pressure
One of chemical vapor deposition, aumospheric pressure cvd, electron beam evaporation, vacuum thermal evaporation and magnetic control sputtering system；When
When using plasma enhances chemical vapor deposition, working frequency, which replaces for high frequency, low frequency or high frequency with low frequency, to be used in mixed way.
7. the production method of flexibility Terahertz Meta Materials wave absorbing device according to claim 4, it is characterised in that: the step
(5) and in (8), the reaction gas that reactive ion etching uses is CF4、CHF3、C3F8、SF6And NF3One or more of；Institute
It states in step (5) and (8), the method for removing remaining photoresist are as follows: use one of acetone, butanone, methanol and ethyl alcohol or several
Kind reagent removes remaining photoresist by ultrasound as adhesive remover；In the step (11) and (12), deposited metal film
Method be one of electron beam evaporation, vacuum thermal evaporation, magnetron sputtering and metal-organic chemical vapor deposition equipment.
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