CN104505598A - Metal/flexible medium layer/metal periodic structure wave-absorbing material and preparation method thereof - Google Patents
Metal/flexible medium layer/metal periodic structure wave-absorbing material and preparation method thereof Download PDFInfo
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Abstract
The invention provides a wave-absorbing material with a metal/flexible medium layer/metal periodic structure on a flexible substrate and a preparation method of the wave-absorbing material. The method comprises the following steps of depositing a metal film on one side of the flexible substrate; coating electronic beam photoresist on the other side of the flexible substrate in a spin coating manner, and exposing the photoresist to form a photoresist pattern with a periodic structure; depositing another layer of metal film for peeling to form the wave-absorbing material of the metal film with a metal/flexible medium layer/metal periodic structure on the flexible substrate. The method for preparing the structural wave-absorbing material on the flexible substrate is simple and feasible, the absorbing frequency band of electromagnetic waves can be adjusted by adjusting the shape and period of the periodic structure and the thickness of the medium layer, and the prepared wave-absorbing material has high wave-absorbing performance.
Description
Technical field
The invention belongs to absorbing material field, particularly relate to the metal/flexible media layer/metal periodic structure absorbing material in the regulatable flexible substrate of a kind of absorption frequency.
Background technology
Absorbing material refer to can absorb, the electromagnetic wave of attenuate incident its electromagnetic energy is converted to the class material that thermal energy consumption dissipates or make electromagnetic wave to disappear because of interference.Owing to having important application in, electromagnetic shielding anti-interference at electromagnetism, radar invisible etc., absorbing material has become the important branch of modern materials science research.Tradition Coated With Absorbing Material has that ferrite, electrical carbon are black, iron-based micro mist, modified carbon nano-tube, acetylene carbon black, ceramic material carbon fiber, iron carbonyl and barium titanate ceramic etc., often kind of material has the absorbing property of its uniqueness, but all exists and inhale that ripple frequency range is narrow, quality is large, density is high and the shortcoming such as thicker.
Structural absorbing mater ials realizes the electromagnetic absorption of any frequency range by regulating size, is subject to the attention of researcher in the last few years gradually.As patent CN103700951A discloses a kind of complex media double-deck FSS structure SRR metal level ultra-thin absorbing material, comprise first frequency option table surface resistance layer from top to bottom successively, first medium layer, second frequency option table surface resistance layer, second dielectric layer and metallic reflector, first frequency option table surface resistance layer is made up of the carbon film chip unit of periodic arrangement, second frequency option table surface resistance layer is made up of the perforate unit of periodic arrangement on carbon film, metallic reflector is made up of the perforate unit of periodic arrangement on metal cladding, perforate unit on metal cladding is resonant ring structure.Patent CN102732210A discloses the electromagnetic-wave absorbent with periodic structure, and comprise magnetic and inhale ripple block and dielectric material grid, the mesh on dielectric material grid is through hole, and magnetic inhales ripple block according to the embedding cloth of some cycles in the through hole of dielectric material grid.Patent CN102724857A discloses the light foam material layer covered on metal plate, the surface periodic of sponge layer be provided with copper array of line segments, described copper line surface is coated with iron-base magnetic absorbing material.The above-mentioned absorbing material related to just improves absorbing property by design physically, does not relate to the structural absorbing mater ials prepared by micro-processing method.
Inventor discloses a kind of absorbing material made on silicon substrate material and preparation method thereof in patent CN103779667A, and its dielectric material is that low stress 25 μm is thick in silicon dielectric layer, but its cost of manufacture is relatively high.Along with the fast development of the flexible electronics such as flexible media and Organic Light Emitting Diode (OLED) technology, the absorbing material in flexible substrate will play its important function, not yet has the patent relating to flexible substrate absorbing material and preparation method thereof at present.
Summary of the invention
For the problems referred to above, the invention provides a kind of method preparing the regulatable metal of absorption frequency/flexible media layer/metal periodic structure absorbing material on flexible substrates, use micro fabrication preparation to have the absorbing material of metal/flexible media film/metal periodic structure, preparation technology's simple possible, cost are low.
For reaching this object, the present invention by the following technical solutions:
A preparation method for metal/flexible media layer/metal periodic structure absorbing material, the method comprises the following steps:
(1) metal film is prepared in the one side of flexible substrate;
(2) at the another side spin coating photoresist of flexible substrate, and toast;
(3) photoresist exposed and after developing, obtain photoresist periodic structure figure;
(4) in the one side having photoresist periodic structure figure, electron-beam evaporation metal film is adopted;
(5) stripping technology is utilized to obtain the absorbing material of the metal film structures with metal/flexible media layer/metal periodic structure.
The preparation method that the present invention is used, first prepares metal film in the one side of flexible substrate, then at another side spin coating photoresist and depositing metallic films, flexible substrate can be made so both as support structure, again as dielectric material.
Regulate dielectric constant and magnetic permeability by the shape and size of regulating cycle micro-structural, adjust dielectric material thickness simultaneously, absorptivity in certain frequency range can be made close to 1.As optimal technical scheme, in step of the present invention (1) flexible substrate be in polyimides (PI) film, ultra-thin glass, PETG (PET) or polyethylene naphthalate (PEN) etc. any one, be generally conventional flexible substrate material.
The frequency range that the thickness of flexible substrate absorbs according to ripple in described step (1) and determining, being preferably 3-30 μm, such as, is 3 μm, 4 μm, 4.3 μm, 5 μm, 6 μm, 6.8 μm, 8 μm, 9 μm, 10.8 μm, 13 μm, 15 μm, 17 μm, 20 μm, 23 μm, 25 μm, 27 μm or 30 μm etc.
The present invention's substrate used needs clean pollution-free, and generally can be removed the attachments such as the impurity of substrate surface by cleaning, the process of cleaning substrate well known to a person skilled in the art, such as can use the cleaning such as deionized water and/or ethanol.As optimal technical scheme, method of the present invention, described in step (1), substrate is through following preliminary treatment:
(1) flexible substrate is put into acetone soln ultrasonic cleaning 5-10min, such as 5min, 6min, 7min, 8min, 9min or 10min etc.;
(2) take out substrate and put into isopropyl alcohol (IPA) ultrasonic cleaning 5-10min, such as 5min, 6min, 7min, 8min, 9min or 10min etc.;
(3) take out substrate washed with de-ionized water clean, use nitrogen gun to be dried up by substrate.
Described step (1) and the middle metal film of step (4) can adopt various metals, are not particularly limited metal.As optimal technical scheme, the metal that in method of the present invention, step (1) and the middle metal film of step (4) adopt is the combination of Ti and/or Au, such as Ti, Au or Ti and Au.The metal that in step (1) and step (4), metal film is used can be identical metal, also can be different metals.When using metal A u, during plating Au film, need thick Cr or Ti of preplating 5nm, to increase the adhesiveness of golden film and substrate.
Prepare the method for metal film in described step (1) for sputtering and/or electron beam evaporation process, sputtering or electron beam evaporation process are ordinary skill in the art means, and the present invention repeats no more.
In described step (1) and step (4) thickness of metal film for make electromagnetic wave not through, be preferably not less than 200nm, such as 200nm, 250nm, 300nm, 350nm, 400nm or 500nm etc.
In described step (2), the method for spin coating photoresist is spin coating electron beam positive photoresist and/or spin coating optics etching glue.
In described step (2), baking is completed by hot plate and/or baking oven.
Baking temperature in described step (2) during spin coating electron beam positive photoresist is 150 ~ 200 DEG C, such as 150 DEG C, 155 DEG C, 160 DEG C, 170 DEG C, 175 DEG C, 180 DEG C, 185 DEG C, 190 DEG C, 195 DEG C or 200 DEG C etc., preferably 180 DEG C.
The time adopting hot plate bake in described step (2) during spin coating electron beam positive photoresist is 1 ~ 10min, such as 1min, 2min, 3mmin, 4min, 5min, 6min, 7min, 8min, 9min or 10min etc., preferred 2min.
Adopt during spin coating electron beam positive photoresist in described step (2) baking oven baking time >=10min, such as 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min, 60min, 65min, 70min, 75min, 80min or 85min etc., be preferably 10 ~ 60min.
The temperature of the baking in described step (2) during spin coating optics etching glue is 80 ~ 120 DEG C, such as 80 DEG C, 85 DEG C, 90 DEG C, 95 DEG C, 100 DEG C, 105 DEG C, 110 DEG C, 115 DEG C or 120 DEG C etc., preferably 110 DEG C.
The time adopting hot plate bake in described step (2) during spin coating optics etching glue is 1 ~ 10min, such as 1min, 2min, 3mmin, 4min, 5min, 6min, 7min, 8min, 9min or 10min etc., preferred 5min.
Adopt during spin coating optics etching glue in described step (2) baking oven baking time >=10min, such as 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min, 60min, 65min, 70min, 75min, 80min or 85min etc., be preferably 10 ~ 60min.
In described step (2), the electron beam positive photoresist of spin coating electron beam positive photoresist is ZEP 520A (methyl styrene chloromethyl propylene acid esters) and/or PMMA (polymethyl methacrylate); For the ease of metal-stripping, the thickness of described electron beam positive photoresist needs to be greater than metal layer thickness, is preferably not less than 1.5 times of metal thickness, carries out adjustment thickness according to actual needs.The ZEP 520A photoresist adopted has very high resolution, and microstructure graph size can be expanded to nanometer range, electron beam positive photoresist used is conventional photoresist, and be easy to realize, replicability is strong.
In described step (2), the optics etching glue of spin coating optics etching glue is S1813 (ethyl cellosolve acetate).
As optimal technical scheme, in described step (3), photoresist is exposed and develop and to be completed by direct electronic beam writing technology or ultraviolet photolithographic.
The detailed process of step of the present invention (2) and (3) can be: spin coating electron beam resist ZEP 520A, PMMA or optics etching glue S1813 on step (1) gained sample, and baking makes it dry on hot plate, then direct electronic beam writing technology and/or ultraviolet photolithographic is utilized to expose on the substrate being coated with electron beam resist, then use developer solution to develop, form the photoetching offset plate figure in micro-structural cycle on flexible substrates.
As optimal technical scheme, the stripping technology in described step (5) is: use adhesive remover, and carry out ultrasonic process.
Adhesive remover in described step (5) is the mixture of acetone and/or butanone, such as acetone and butanone.
An object of the present invention is also to provide a kind of flexible substrate structural wave-absorbing material, and described absorbing material is prepared by the method for the invention.
Compared with prior art, the present invention has following beneficial effect:
(1) method of the present invention, preparation technology is simple first prepares metal film in the one side of flexible substrate, again at another side spin coating photoresist and depositing metallic films, preparation has the absorbing material of metal/flexible media layer/metal periodic structure, obtained absorbing material can be made like this to have good absorbing property, to also provide effective simultaneously, the novel processing method of low cost.
(2) method of the present invention, the flexible substrate that PI, ultra-thin glass etc. are conventional prepares absorbing material, compatible with the micro fabrication of routine, by the thickness of the shape of adjustment micro-structural cycle graph, size, cycle and dielectric layer, be easy to the absorbing material preparing different frequency range.
(3) method of the present invention, uses conventional micro fabrication to prepare absorbing material, is easy to large-scale production.
Accompanying drawing explanation
Fig. 1 is the unit schematic top plan view in the micro-structural cycle that the present invention adopts;
Wherein, w is cross width, L
1, L
2be respectively the length of diesis, g is the spacing of diesis, and P is the cycle;
Fig. 2 is the unit section schematic diagram in the micro-structural cycle that the present invention adopts;
Wherein, 1 is structured metal layer, and 2 is flexible substrate/dielectric layer, and 3 is metal level;
Fig. 3 is the process chart of preparation flexible substrate structural wave-absorbing material;
Wherein, S1 is for preparing metal film, and S2 is spin coating photoresist, and S3 obtains micro-structural cycle photoetching offset plate figure for exposing and developing, and S4 is deposited metal film, and S5 obtains metal micro structure cycle graph after peeling off;
Fig. 4 be adopt the embodiment of the present invention 1 obtain the electron micrograph of absorbing material.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.
Those skilled in the art should understand, described embodiment is only help to understand the present invention, should not be considered as concrete restriction of the present invention.
The method preparing metal/flexible media layer/metal periodic structure absorbing material on flexible substrates provided by the invention, adopt conventional micro fabrication, the absorbing material micro-structural periodic unit of preparation is diesis shape as shown in Figure 1, Fig. 1 is the front view of the absorbing material micro-structural periodic unit of preparation, and Fig. 2 is the profile of the absorbing material micro-structural periodic unit of preparation.
The present invention ZEP used 520A is that Japanese Marubeni produces, and PMMA is that German Allresist company produces, and S1813 is that Shipley company of the U.S. produces.
Fig. 2 is the process chart of preparation flexible substrate structural wave-absorbing material.
Embodiment 1:
Method metal/flexible media layer/metal periodic structure absorbing material preparing by flexible substrate provided by the invention comprises the following steps:
Step 1: at cleaned flexible PI deposited on substrates metal A u layer.
In this step, adopt electron beam evaporation technique, at cleaned 20 μm of thick metal A u layers of thick PI deposited on substrates 200nm.For ensure electromagnetic wave not through, require that the thickness of Au film is not less than 200nm.For increasing the adhesiveness of golden film and substrate, during plating Au film, need thick Cr or Ti of preplating 5nm.
Step 2: spin coating electron beam resist on the another side of flexible PI substrate, form the electron beam lithography glue pattern in micro-structural cycle after exposure imaging, detailed process is as follows:
A, spin coating ZEP 520A electron beam positive photoresist, and to be placed on hot plate 180 DEG C of bakings 2 minutes.
In this step, for ease of next step metal lift-off material, ZEP 520A glue is thick in about 500nm.
B, employing direct electronic beam writing technology expose photoresist, and development obtains the photoetching offset plate figure in micro-structural cycle.
In this step, use the developer solution corresponding with electron beam adhesive ZEP 520A, the ZEP glue of exposure is developed; The developer solution used in the embodiment of the present invention is n-amyl acetate.
Step 3: deposit another layer of Au.
In this step, adopt electron beam evaporation process, with the sample of photoetching offset plate figure depositing the thick Au film of 200nm; For ensureing the smooth of metal stripper wire bar, this step should not use magnetron sputtering technique to realize.
Step 4: adopt stripping technology, forms structural absorbing mater ials.
Use glue-dispenser butanone, and with suitably ultrasonic, after stripping, realize Au micro-structural cycle graph.
Fig. 3 for adopting prepared by the PI flexible substrate that obtains of the present embodiment 1 scanning electron microscopic picture in the front surface A u micro-structural cycle of Au/PI film/Au periodic structure absorbing material, can find out, diesis shape Au micro-structural lines uniformity, the smooth of the edge, has good wave-absorbing effect.
Embodiment 2:
Method metal/flexible media layer/metal periodic structure absorbing material preparing by flexible substrate provided by the invention comprises the following steps:
Step 1: at cleaned ultra-thin glass deposited on substrates metal Ti layer.
In this step, adopt magnetron sputtering technique, at cleaned 30 μm of thick metal Ti layers of heavy sheet glass deposited on substrates 300nm.
Step 2: spin coating electron beam resist on the another side of glass substrate, form the electron beam lithography glue pattern in micro-structural cycle after exposure imaging, detailed process is as follows:
A, spin coating PMMA electron beam positive photoresist, and to be placed in baking oven 200 DEG C of bakings 40 minutes.
In this step, for ease of next step metal lift-off material, PMMA glue is thick in about 600nm.
B, employing electron beam lithography expose photoresist, and development obtains the photoetching offset plate figure in micro-structural cycle.
In this step, use the developer solution corresponding with electron beam adhesive PMMA, the PMMA glue of exposure is developed; The mixed liquor (volume ratio 1:3) that the developer solution used in the embodiment of the present invention is MIBK and IPA.
Step 3: deposit another layer of Ti.
In this step, adopt electron beam evaporation process, with the sample of photoetching offset plate figure depositing the thick Ti film of 300nm; For ensureing the smooth of metal stripper wire bar, this step should not use magnetron sputtering technique to realize.
Step 4: adopt stripping technology, forms structural absorbing mater ials.
Use glue-dispenser acetone, and with suitably ultrasonic, after stripping, realize Ti micro-structural cycle graph.
Embodiment 3:
Method metal/flexible media film/metal periodic structure absorbing material preparing by flexible substrate provided by the invention comprises the following steps:
Step 1: at cleaned PET deposited on substrates metal Ti layer.
In this step, adopt magnetron sputtering technique, at cleaned 25 μm of thick metal Ti layers of thick PET deposited on substrates 250nm.
Step 2: spin coating ultraviolet photoresist on the another side of PET substrate, form the photoetching offset plate figure in micro-structural cycle after exposure imaging, detailed process is as follows:
A, spin coating S1813 positive photoresist, and to be placed in baking oven 110 DEG C of bakings 40 minutes.
In this step, for ease of next step metal lift-off material, S1813 glue is thick in about 1 μm.
B, employing ultraviolet photolithographic technology expose photoresist, and development obtains the photoetching offset plate figure in micro-structural cycle.
In this step, use the developer solution corresponding with S1813, the photoresist of exposure is developed; The developer solution used in the embodiment of the present invention is Tetramethylammonium hydroxide (TMAH) solution of 1%.
Step 3: deposit another layer of metal A u.
In this step, adopt electron beam evaporation process, with the sample of photoetching offset plate figure depositing the thick Au film of 300nm; For increasing the adhesiveness of golden film and substrate, during plating Au film, need thick Cr or Ti of preplating 5nm.For ensureing the smooth of metal stripper wire bar, this step should not use magnetron sputtering technique to realize.
Step 4: adopt stripping technology, forms structural absorbing mater ials.
Use glue-dispenser acetone, and with suitably ultrasonic, after stripping, realize Au micro-structural cycle graph.
Embodiment 4:
Except spin coating ZEP 520A electron beam positive photoresist in step 2, and to be placed on hot plate outside 150 DEG C of bakings 10 minutes, other processes are all in the same manner as in Example 1, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 5:
Except spin coating ZEP 520A electron beam positive photoresist in step 2, and to be placed on hot plate outside 200 DEG C of bakings 1 minute, other processes are all in the same manner as in Example 1, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 6:
Except spin coating PMMA electron beam positive photoresist in step 2, and to be placed in baking oven outside 180 DEG C of bakings 60 minutes, other processes are all in the same manner as in Example 2, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 7:
Except spin coating PMMA electron beam positive photoresist in step 2, and to be placed in baking oven outside 200 DEG C of bakings 10 minutes, other processes are all in the same manner as in Example 2, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 8:
Except spin coating S1813 positive photoresist in step 2, and to be placed on hot plate outside 120 DEG C of bakings 1 minute, other processes are all in the same manner as in Example 3, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 9:
Except spin coating S1813 positive photoresist in step 2, and to be placed on hot plate outside 80 DEG C of bakings 10 minutes, other processes are all in the same manner as in Example 3, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 10:
Except spin coating S1813 positive photoresist in step 2, and to be placed on hot plate outside 110 DEG C of bakings 5 minutes, other processes are all in the same manner as in Example 3, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 11:
Except spin coating S1813 positive photoresist in step 2, and to be placed in baking oven outside 110 DEG C of bakings 60 minutes, other processes are all in the same manner as in Example 3, and obtained periodic structure absorbing material has good absorbing property.
Embodiment 12:
Except spin coating S1813 positive photoresist in step 2, and to be placed in baking oven outside 120 DEG C of bakings 10 minutes, other processes are all in the same manner as in Example 3, and obtained periodic structure absorbing material has good absorbing property.
The flexible substrate that the embodiment of the present invention 2 ~ 12 makes prepares the scanning electron microscopic picture in the front metal micro-structural cycle of metal/flexible media film/metal periodic structure absorbing material and is similar to Fig. 3.
In sum, the present invention adopts and first prepares metal film in the one side of flexible substrate, again at another side spin coating photoresist and the method for depositing metallic films, by the simple technique of routine as the combination of spin coating glue, electron-beam evaporation, stripping technology etc., can to obtain on flexible substrates and using flexible substrate as dielectric layer and there is good absorbing property, there is the novel wave-absorbing material of metal/flexible media layer/metal periodic structure.By preparing absorbing material on flexible substrates, compatible with the micro fabrication of routine, by the thickness of the shape of adjustment micro-structural cycle graph, size, cycle and dielectric layer, be easy to prepare the absorbing material with different frequency range.
Applicant states, the present invention illustrates detailed process equipment and process flow process of the present invention by above-described embodiment, but the present invention is not limited to above-mentioned detailed process equipment and process flow process, namely do not mean that the present invention must rely on above-mentioned detailed process equipment and process flow process and could implement.Person of ordinary skill in the field should understand, any improvement in the present invention, to equivalence replacement and the interpolation of auxiliary element, the concrete way choice etc. of each raw material of product of the present invention, all drops within protection scope of the present invention and open scope.
Claims (10)
1. a preparation method for metal/flexible media layer/metal periodic structure absorbing material, it is characterized in that, the method comprises the following steps:
(1) metal film is prepared in the one side of flexible substrate;
(2) at the another side spin coating photoresist of flexible substrate, and toast;
(3) photoresist exposed and after developing, obtain photoresist periodic structure figure;
(4) in the one side having photoresist periodic structure figure, electron-beam evaporation metal film is adopted;
(5) stripping technology is utilized to obtain the absorbing material of the metal film structures of metal/flexible media layer/metal periodic structure.
2. preparation method according to claim 1, it is characterized in that, flexible substrate is the combination of any one or at least two kinds in polyimide film, ultra-thin glass, PETG or polyethylene naphthalate in described step (1).
3. preparation method according to claim 1 and 2, is characterized in that, in described step (1), flexible substrate is through following preliminary treatment:
(1) flexible substrate is put into acetone soln ultrasonic cleaning 5-10min;
(2) take out substrate and put into isopropyl alcohol ultrasonic cleaning 5-10min;
(3) take out substrate washed with de-ionized water clean, use nitrogen gun to be dried up by substrate.
4. the preparation method according to any one of claim 1-3, is characterized in that, the metal that described step (1) and the middle metal film of step (4) adopt is Ti and/or Au independently;
Preferably, the method for metal film is prepared in described step (1) for sputtering and/or electron beam evaporation process;
Preferably, in described step (1) and step (4) thickness of metal film independently for make electromagnetic wave not through;
Preferably, described step (1) and the middle thickness of metal film of step (4) are independently for being not less than 200nm.
5. the preparation method according to any one of claim 1-4, is characterized in that, in described step (2), the method for spin coating photoresist is spin coating electron beam positive photoresist and/or spin coating optics etching glue;
Preferably, in described step (2), baking is completed by hot plate and/or baking oven.
6. preparation method according to claim 5, is characterized in that, in described step (2), the method for spin coating photoresist is spin coating electron beam positive photoresist, and its baking temperature is 150 ~ 200 DEG C;
Preferably, in described step (2), the baking temperature of spin coating electron beam positive photoresist is 180 DEG C;
Preferably, in described step (2), spin coating electron beam positive photoresist adopts the time of hot plate bake to be 1 ~ 10min;
Preferably, in described step (2), spin coating electron beam positive photoresist adopts the time of hot plate bake to be 2min;
Preferably, in described step (2) spin coating electron beam positive photoresist adopt baking oven baking time >=10min;
Preferably, in described step (2), spin coating electron beam positive photoresist adopts the time of baking oven baking to be 10 ~ 60min.
7. the preparation method according to any one of claim 5-6, is characterized in that, in described step (2), the method for spin coating photoresist is spin coating optics etching glue, and its baking temperature is 80 ~ 120 DEG C;
Preferably, the baking temperature in described step (2) during spin coating optics etching glue is 110 DEG C;
Preferably, the time adopting hot plate bake in described step (2) during spin coating optics etching glue is 1 ~ 10min;
Preferably, the time adopting hot plate bake in described step (2) during spin coating optics etching glue is 5min;
Preferably, adopt during spin coating optics etching glue in described step (2) baking oven baking time >=10min;
Preferably, the time adopting baking oven baking in described step (2) during spin coating optics etching glue is 10 ~ 60min.
8. the preparation method according to any one of claim 5-7, is characterized in that, in described step (2), the electron beam positive photoresist of spin coating electron beam positive photoresist is ZEP 520A and/or PMMA;
Preferably, in described step (2), the optics etching glue of spin coating optics etching glue is S1813.
9. the preparation method according to any one of claim 1-8, is characterized in that, exposes and develop to be completed by direct electronic beam writing technology or ultraviolet photolithographic in described step (3) to photoresist;
Preferably, the stripping technology in described step (5) is: use adhesive remover, and carry out ultrasonic process;
Preferably, the adhesive remover in described step (5) is acetone and/or butanone.
10. one kind as described in any one of claim 1-9 preparation method prepare metal/flexible media layer/metal periodic structure absorbing material.
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| CN108000973A (en) * | 2017-12-07 | 2018-05-08 | 山东非金属材料研究所 | A kind of gradient multi-layered magnetic electromagentic wave absorption film and preparation method thereof |
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