CN108821228A - Nano structure capable of realizing asymmetric transmission and preparation method thereof - Google Patents
Nano structure capable of realizing asymmetric transmission and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of micro-nano optics, in particular to a nano structure capable of realizing asymmetric transmission and a preparation method thereof, wherein the nano structure is formed by sequentially connecting a first nano film, a dielectric layer and a second nano film from top to bottom, the first nano film and the second nano film are completely the same and are formed by connecting a plurality of nano units with the same structure according to a rectangular periodic array, each nano unit is formed by a metal film, each nano unit also comprises an inclined rectangular hole, an included angle α is formed between the long edge of the rectangular hole and the periodic direction of the nano unit, the rectangular holes on the first nano film and the second nano film are the same in position and are communicated up and down, and the metal film is made of noble metal.
Description
Technical field
The invention belongs to micronano optical technical fields, and in particular to a kind of nanostructure of achievable asymmetric transmission and its
Preparation method.
Background technique
Asymmetric transmission (AsymmetricTransmission, AT) refers to there is the electromagnetic wave incident knot of different polarization states
The effect of different transmission performances is shown after structure, wherein it is transmission, absorption, reflection etc. that transmission performance, which is mainly studied,.In biology
Molecule field, chiral molecules is generally all weaker, and artificial micro-nano metal structure is greatly improved its chirality, and AT value is as chiral
The detectable signal of molecule is just particularly important, so we need to reach big when designing the structure of this asymmetric transmission
Asymmetric transmission efficiency, i.e., big AT value and AT signal as much as possible.Therefore, to different type asymmetric transmission device
Design and the research realized, have critically important realistic meaning.
By the circularly polarized light of vertical incident different polarization states, asymmetric biography is further reflected by transmission performance
Defeated effect, formula indicate：
Wherein, subscript "+" ("-") represents right (left side) rotation；Subscript " -+" ("+- ") represent right (left side) rounding polarised light incidence
Structure, right (left side) rounding polarised light extraction structure.This special optical property has very deep application potential, in Integrated Light
Have in the fields such as road, communication, modern military and is widely applied very much.In optical field, the optical characteristics of asymmetric transmission is also by depth
It studies with entering, excites the great significance for design of the phasmon structure of strong asymmetric transmission performance.
Surface phasmon be a kind of free electron and photon in metal surface area interact to be formed along metal
The electronic sparse wave that surface is propagated, it is this that electric-field enhancing can be realized by incident light activated free electron cluster oscillation, inhale
Receive the effect of enhancing.The phasmon structure of engineer has many peculiar electromagnetic performances, in Surface-enhanced spectroscopic, biology
Sensing etc. has a wide range of applications.In recent years, the design of phasmon chiral metal structure have become one it is important
Research direction produces the chiral nanostructure of many three-dimensionals, such as metal spiral shell using this property of chiral phasmon structure
Revolve structure etc..But the structure by preparing Corkscrews with top-down manufacturing technology from bottom to top is extremely complex, it is difficult to grasp
Make, is difficult to promote the use of a large area.
The asymmetric transmission effect of circularly polarized light, linearly polarized light is realized by double-layer structure in the prior art, but mostly
Structure is complicated, and the process for preparing figure is complicated, low efficiency；In addition, for straight incident circularly polarized light, most of three-dimensional structure and
The asymmetric transmission signal of single layer structure is weak, and the application to asymmetric transmission effect is greatly to limit.
Summary of the invention
It is complicated in order to solve most of three-dimensional structure preparation process existing in the prior art, planar structure and three-dimensional knot
The structure problem weak for straight incident circularly polarized light asymmetric transmission signal, the present invention provides a kind of achievable asymmetric transmissions
Nanostructure and preparation method thereof, structure is simple, and preparation is simple, and compare single layer and three-dimensional structure may be implemented it is biggish non-right
Claim transmission, generate bigger AT signal, easily prepared and precision is high, can be generated very by simple structure and preparation method thereof
Strong asymmetric transmission effect.
The technical problem to be solved in the present invention is achieved through the following technical solutions：
A kind of nanostructure of achievable asymmetric transmission, the nanostructure are received by the first nano thin-film, dielectric layer and second
Rice film is sequentially connected composition from top to bottom；First nano thin-film and the second nano thin-film are identical, by multiple knots
The identical nano unit of structure is formed by connecting by rectangular Periodic array；Each nano unit is made of a metallic film；It is described
Each nano unit further includes having an inclined rectangular hole, and the rectangular opening long side and nano unit period direction have an angle α；
Rectangle hole site on first nano thin-film and the second nano thin-film corresponds, and up and down；The metallic film
It is made of noble metal.
Further, thickness h=80nm of the nano unit；The thickness of dielectric layers d=120nm；The nanometer list
Period Px=Py=560~720nm of member.
Further, length l=520~560nm of the rectangular opening, width w=180~220nm, the long side of rectangular opening
With angle α=0 °~90 ° in nano unit period direction.
Further, the noble metal is gold or ag material；The dielectric layer material is SiO2。
Further, it can be achieved that the preparation method of the nanostructure of asymmetric transmission, includes the following steps：
Step 1, prepare substrate：Prepare ito glass substrate and cleans drying；
Step 2, resist coating：PMMA photoresist is coated in the ready ito glass substrate of step 1 with photoresist spinner；
Step 3, it is dried after gluing：The substrate of step 2 coating PMMA photoresist is placed on hot plate and is dried；
Step 4, electron beam exposure structure graph：The second of the nanostructure that asymmetric transmission can be achieved is designed with pattern generator
Nano thin-film structure graph, and the substrate with electron beam exposure, after being exposed；
Step 5, develop：Under room temperature, the substrate exposed in step 4 is put into impregnate in developer solution and is developed；
Step 6, it is fixed：Step 5 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, takes substrate after the completion of fixing
Out, with being dried with nitrogen；
Step 7, it is dried after fixing：Step 6 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；
Step 8, noble metal is plated：The substrate dried after step 7 fixing is put into electron beam vacuum evaporating coating machine plating noble metal, is steamed
It is further taken out after having plated cooling 10min~20min；
Step 9, PMMA photoresist is removed：Using lift-off technique, the substrate after step 8 Vacuum Deposition noble metal is steeped in acetone
In, the time is at least 30min, dissolves PMMA photoresist；
Step 10, it dries up：Substrate after drying up the removing PMMA photoresist that step 9 obtains with nitrogen gun, it is non-right to obtain can be achieved
Claim the second nano thin-film of the nanostructure of transmission；
Step 11, dielectric layer is plated：The substrate that step 10 is dried is put into electron beam vacuum evaporating coating machine plating SiO2Layer, as two
Dielectric layer between layer nano thin-film, further takes out after cooling 10min~20min has been deposited；
Step 12, resist coating：PMMA photoresist is coated in the ready substrate of step 11 with photoresist spinner；
Step 13, it is dried after gluing：The substrate of step 12 coating PMMA photoresist is placed on hot plate and is dried；
Step 14, electron beam exposure structure graph：The of the nanostructure that asymmetric transmission can be achieved is designed with pattern generator
One nano thin-film structure graph, and the substrate with electron beam exposure, after being exposed；
Step 15, develop：Under room temperature, the substrate exposed in step 14 is put into impregnate in developer solution and is developed；
Step 16, it is fixed：Step 15 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, by substrate after the completion of fixing
It takes out, with being dried with nitrogen；
Step 17, it is dried after fixing：Step 16 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；
Step 18, noble metal is plated：The substrate dried after step 17 fixing is put into electron beam vacuum evaporating coating machine plating noble metal,
It is further taken out after cooling 10min~20min has been deposited；
Step 19, PMMA photoresist is removed：Using lift-off technique, the substrate after step 18 Vacuum Deposition noble metal is steeped third
In ketone, the time is at least 30min, dissolves PMMA photoresist；
Step 20, it dries up：Substrate after drying up the removing PMMA photoresist that step 19 obtains with nitrogen gun obtains described by bilayer
The nanostructure for the achievable asymmetric transmission that nano thin-film is constituted.
Further, step 1 concrete operations are：Prepare with a thickness of 1.0mm, length and width dimensions are 20.0mm × 20.0mm
Ito glass, and the ito glass of preparation is put into cleaning solution and is cleaned, after deionized water ultrasound 15min, with acetone ultrasound
15min, then be put into nitrogen cabinet after finally being dried up with nitrogen gun with alcohol ultrasound 15min later with deionized water ultrasound 5min
It is spare.
Further, in the step 2 and step 12 photoresist with a thickness of 80nm, the revolving speed of photoresist spinner is 4000rpm,
Time is 60s；The temperature dried in the step 3, step 7, step 13 and step 17 is 150 DEG C, time 3min.
Further, in the step 5 and step 15 developer solution by two pentanone of tetramethyl and isopropanol with volume ratio for 3：1
Cooperation is made, and the time for impregnating development is 60s；The time that fixing is impregnated in the step 6 and step 16 is 60s；The step 8
Be not more than 3 × 10-6torr with the vacuum degree of vacuum evaporating coating machine in step 18, vapor deposition plating noble metal with a thickness of 80nm.
Compared with prior art, beneficial effects of the present invention：
(1) nanostructure of the invention, nano unit by the first nano thin-film and the second nano thin-film carry out structure combine and
At characterizing the Chiral properties of structure by periodic arrangement, and pass through the different response machines to left-hand polarization light and right-handed polarized light
System, the light of polarization state needed for obtaining, further applies in the devices such as polarisation transformer, electromagnetism, polarization rotator, practical application
It is in extensive range.
(2) nanostructure of the present invention can generate strong asymmetric transmission effect, reach as high as 39%, traditional plane
Structure realizes asymmetric transmission signal only in 10% or so, when the embodiment of the present application nanostructure is irradiated in right-handed rotation, emergent light
In there is 39% to be converted into left-handed rotation, generate strong asymmetric transmission effect, detectable signal is strong, and resonance wave section is located at visible light wave
Section, is easy to the detection of the signal of chiral molecules.
(3) nanostructure of the invention, using the field coupling between two layers of nanostructure in structure design, so that the knot
The AT effect generation Cascaded amplification effect of structure, rather than the simple addition of simple two double-layer structures AT signal, that is to say, that
AT ≠ 10%+10%=20%, but close to 40%.The embodiment of the present application proposes the new tool for improving structure AT signal,
It is exactly to achieve the effect that Cascaded amplification using the coupling of two interlayer of the double-deck rectangular opening, is the design of asymmetric transmission optical device
A kind of new thinking is provided with research.
(4) nanostructure of the present invention can by adjust nano thin-film on tilt rectangular opening in such as rectangular opening length,
Width, the vibration wavelength that asymmetric transmission is adjusted with the parameters such as the angle α in nano unit period direction, and can also be to it
The strong and weak of signal carries out controllable adjustment.
(5) nanostructure dielectric layer of the present invention uses SiO2Material, it is cheap and easy to get, and there is good light transmission, in
Between dielectric layer can be changed to other such as thermo-sensitive materials, to realize the regulation of AT signal.
Detailed description of the invention
Fig. 1 is nanostructure three dimensional structure diagram of the present invention；
Fig. 2 is the structural schematic diagram of nanostructure nano unit of the present invention；
Fig. 3 is nanostructure asymmetric transmission polarization conversion spectrogram of the present invention.
Wherein, in Fig. 1 and Fig. 2：1, the first nano thin-film；2, the second nano thin-film；3, dielectric layer；4, rectangular opening.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment 1：
It as depicted in figs. 1 and 2, is a kind of nanostructure of achievable asymmetric transmission of the embodiment of the present application, to solve existing skill
Most three-dimensional structure preparation process complexity, planar structure and three-dimensional structure present in art are asymmetric for straight incident circularly polarized light
The weak problem of transmission effects signal, the embodiment of the present application provide a kind of nanostructure of achievable asymmetric transmission, structure letter
Single, preparation is simple, and compares single layer and biggish asymmetric transmission effect may be implemented in three-decker, generates bigger AT letter
Number, easily prepared and precision is high, can generate very strong asymmetric transmission effect by simple structure and preparation method thereof.
As shown in Figure 1, a kind of nanostructure of achievable asymmetric transmission, by the first nano thin-film 1, dielectric layer 3 and
Two nano thin-films 2 are sequentially connected composition from top to bottom, and the first nano thin-film 1 is identical with the second nano thin-film 2, by multiple
The identical nano unit of structure is formed by connecting by rectangular Periodic array.
As shown in Fig. 2, each nano unit is made of a metallic film, each nano unit further includes having an inclined rectangular
Hole 4,4 long side of rectangular opening and nano unit period direction have an angle α, on the first nano thin-film 1 and the second nano thin-film 2
4 position of rectangular opening corresponds, and up and down, metallic film is made of noble metal, and the embodiment of the present application is preferably golden material,
Dielectric layer 3 is preferably SiO2Material.
The polarization state in direction and incidence wave that asymmetric transmission effect and wave are propagated, which all has, closely to be contacted, when light enters
When penetrating, strong coupling is generated between electromagnetic wave and the embodiment of the present application nanostructure, by irradiating in the opposite direction
The wave that the wave of identical polarization state obtains different polarization states generates polarization conversion, obtains different polarization conversion ratios, to generate strong
Strong asymmetric transmission.
The nano unit of the nanostructure of the embodiment of the present application is tied by the first nano thin-film 1 and the second nano thin-film 2
Structure combination, the Chiral properties of structure, under the excitation of circularly polarized light, the first nano thin-film 1 and second are characterized by periodic arrangement
Strong coupling is generated between nano thin-film 2, realizes the AT signal cascade amplification of structure.The embodiment of the present application nanostructure
Strong asymmetric transmission effect can be generated, reaches as high as 39%, i.e., when right-handed rotation incidence the embodiment of the present application nanostructure, out
Penetrating in light has 39% to be converted into left-handed rotation, has very big mention relative to traditional planar structure asymmetric transmission signal 10% or so
Height, this has very strong practical popularization and application on optical polarization device.
In the present embodiment, it can be achieved that the nanostructure of asymmetric transmission is equipped with inclined rectangular on each nano unit
Hole 4 generates strong AT signal on two layers of nano thin-film.Apply for that embodiment nanostructure asymmetric transmission performance is prominent, it can
Be applied in the production of asymmetric transmission device well, when changing the embodiment of the present application nano structured unit size, example
Such as the length of rectangular opening 4, width, can be asymmetric with the adjustment of predictability with the angle α parameter in nano unit period direction
The power of the vibration frequency band and AT signal of transmission, can play huge in the production of the devices such as polarization converter, electromagnetic switch
Effect.
Embodiment 2：
Based on the nanostructure that asymmetric transmission can be achieved disclosed in embodiment 1, the embodiment of the present application discloses a kind of can be achieved
The preparation method of the nanostructure of asymmetric transmission, specific step is as follows：
Step 1, prepare substrate：Prepare ito glass substrate and cleans drying；
Specifically, step 1 concrete operations are：Preparing with a thickness of 1.0mm, length and width dimensions are the ito glass of 20.0mm × 20.0mm,
And the ito glass of preparation is put into cleaning solution and is cleaned, after deionized water ultrasound 15min, with acetone ultrasound 15min, then use
Alcohol ultrasound 15min uses deionized water ultrasound 5min later, is put into after finally being dried up with nitrogen gun spare in nitrogen cabinet.
Step 2, resist coating：PMMA photoresist is coated in the ready ito glass substrate of step 1 with photoresist spinner；Tool
Body, photoresist with a thickness of 80nm, the revolving speed of photoresist spinner is 4000rpm, time 60s；
Step 3, it is dried after gluing：The substrate of step 2 coating PMMA photoresist is placed on hot plate and is dried；The temperature of drying is
150 DEG C, time 3min.
Step 4, electron beam exposure structure graph：The nanostructure that asymmetric transmission can be achieved is designed with pattern generator
Second nano thin-film, 2 structure graph, and the substrate with electron beam exposure, after being exposed；
Step 5, develop：Under room temperature, the substrate exposed in step 4 is put into impregnate in developer solution and is developed；
Step 6, it is fixed：Step 5 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, takes substrate after the completion of fixing
Out, with being dried with nitrogen；
Step 7, it is dried after fixing：Step 6 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；The temperature of drying is equal
It is 150 DEG C, time 3min.
Step 8, noble metal is plated：The substrate dried after step 7 fixing is put into your gold electron beam vacuum evaporating coating machine plates
Belong to, is further taken out after cooling 10min~20min has been deposited；
Step 9, PMMA photoresist is removed：Using lift-off technique, the substrate after step 8 Vacuum Deposition noble metal is steeped in acetone
In, the time is at least 30min, dissolves PMMA photoresist；
Step 10, it dries up：Substrate after drying up the removing PMMA photoresist that step 9 obtains with nitrogen gun, it is non-right to obtain can be achieved
Claim the second nano thin-film 2 of the nanostructure of transmission；
Step 11, dielectric layer 3 is plated：The substrate that step 10 is dried is put into electron beam vacuum evaporating coating machine plating SiO2Layer, as
Dielectric layer 3 between two layers of nano thin-film, further takes out after cooling 10min~20min has been deposited；
Step 12, resist coating：PMMA photoresist is coated in the ready substrate of step 11 with photoresist spinner；
Specifically, photoresist with a thickness of 80nm, the revolving speed of photoresist spinner is 4000rpm, time 60s；
Step 13, it is dried after gluing：The substrate of step 12 coating PMMA photoresist is placed on hot plate and is dried；The temperature of drying is equal
It is 150 DEG C, time 3min.
Step 14, electron beam exposure structure graph：The nanostructure that asymmetric transmission can be achieved is designed with pattern generator
1 structure graph of the first nano thin-film, and the substrate with electron beam exposure, after being exposed；
Step 15, develop：Under room temperature, the substrate exposed in step 14 is put into impregnate in developer solution and is developed；
Step 16, it is fixed：Step 15 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, by substrate after the completion of fixing
It takes out, with being dried with nitrogen；
Step 17, it is dried after fixing：Step 16 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；The temperature of drying
It is 150 DEG C, time 3min.
Step 18, noble metal is plated：It is expensive that the substrate dried after step 17 fixing is put into the plating of electron beam vacuum evaporating coating machine
Metal further takes out after cooling 10min~20min has been deposited；
Step 19, PMMA photoresist is removed：Using lift-off technique, the substrate after step 18 Vacuum Deposition noble metal is steeped third
In ketone, the time is at least 30min, dissolves PMMA photoresist；
Step 20, it dries up：Substrate after drying up the removing PMMA photoresist that step 19 obtains with nitrogen gun, obtains by double-layer nanometer
The nanostructure for the achievable asymmetric transmission that film is constituted.
Specifically, wherein in step 5 and step 15 developer solution by two pentanone of tetramethyl and isopropanol with volume ratio for 3：1 matches
Conjunction is made, and the time for impregnating development is 60s；The time that fixing is impregnated in step 6 and step 16 is 60s；In step 8 and step 18
The vacuum degree of vacuum evaporating coating machine be not more than 3 × 10-6torr, vapor deposition plating noble metal with a thickness of 80nm.
In the preparation method of above structure, the embodiment of the present application nanostructure is by nano unit by rectangular Periodic array group
At strong asymmetric transmission double-level-metal nanostructure, structure is simple, during the preparation process the step of few, electron beam exposure knot
When composition shape, speed is fast, high-efficient, uses manpower and material resources sparingly and experimental cost, and the precision of shaping structures is high.
Embodiment 3：
For the nanostructure that asymmetric transmission can be achieved disclosed in embodiment 1 is further described, the embodiment of the present application discloses one
The asymmetric transmission effect of the nanostructure of the achievable asymmetric transmission of kind, the 3D using COMSOL Multiphysics are limited
First method to carry out analogue simulation to the embodiment of the present application nano-structured optical characteristic.
As depicted in figs. 1 and 2, a kind of nanostructure of achievable asymmetric transmission, by the first nano thin-film 1, dielectric layer 3
It is sequentially connected composition from top to bottom with the second nano thin-film 2, the first nano thin-film 1 is identical with the second nano thin-film 2, by
The identical nano unit of multiple structures is formed by connecting by rectangular Periodic array.Thickness h=80nm of nano unit, dielectric layer 3 are thick
Spend d=120nm, the period Px=Py=620nm of nano unit, the length l=540nm of rectangular opening 4, width w=200nm, square
The long side in shape hole 4 and angle α=22.5 ° in the direction nano unit x.First nano thin-film 1 and the first nano thin-film 1 are preferably gold
Material, 3 material of dielectric layer are SiO2。
It is different to the polarization state conversion ratio of incident light when LCP and RCP are incident from the front of structure respectively, to produce
Raw asymmetric transmission effect, obtains AT signal.Especially turn when incident light is left-hand polarization light, emergent light is dextropolarization light
Change that transmissivity than incident light is right-handed polarized light, emergent light is the high of left-handed deflect light.
Such as the asymmetric transmission spectrogram that Fig. 3 is the embodiment of the present application nanostructure, wherein Fig. 3 (a) is the application implementation
The transmitted light spectrogram of example, Fig. 3 (b) are the asymmetric transmission polarization conversion spectrogram of the embodiment of the present application, use LCP and RCP respectively
It is irradiated in a manner of straight incident, the embodiment of the present application nanostructure shows different transmissivities under different-waveband, 550~
800nm wave band, the circular polarization transfer efficiency of LCP are greater than the circular polarization transfer efficiency of RCP, it is significantly corresponding to produce two differences
Formant, in the corresponding strong asymmetric transmission signal for generating two different-wavebands in resonance paddy position of transmitted spectrum, respectively
The mode II of mode I and the 645nm wave band of 700nm wave band, as shown in figure 3, being indicated respectively by two vertical dotted lines.
As shown in Fig. 3 (a), resonate wave band (λ=700nm) to mode I, when LCP is directly incident, the embodiment of the present application nanometer
Structure is 40% to the transmissivity of left-hand polarization light, and at the peak being located in the incident light transmission spectrum curve；When RCP is directly incident
When, nanostructure is 1% to the transmissivity of right-handed polarized light,.Because the Cascaded amplification of AT characteristic acts on, so that RCP light directly enters
Very low to the transmissivity of right-handed polarized light when penetrating, the transmission difference of left and right polarised light increases, so as to cause the AT of total
Signal is very strong.
It resonates wave band (λ=645nm) to mode II, when LCP is directly incident, the embodiment of the present application nanostructure is to left-handed inclined
The transmissivity of vibration light is 12%, and at the peak being located in the incident light transmission spectrum curve；When RCP is directly incident, the application is real
Applying a nanostructure is 0.2% to the transmissivity of right-handed polarized light,.Equally, because the Cascaded amplification of AT characteristic acts on, left and right is inclined
The transmission difference of vibration light increases, also very strong so as to cause the AT signal of the mode.
The design of the embodiment of the present application nanostructure makes the resonance pair of the transmissivity peak valley of left-hand polarization light and right-handed polarized light
Strong asymmetric transmission effect should be generated.Chiral structure and conventional monolayers structure are compared in the design of nanostructure, for difference
The corresponding asymmetric transmission difference on effect of the transmitted spectrum of circularly polarized light incidence is obvious, and Cascaded amplification effect believes the AT of structure
Number intensity increases substantially.Pass through the light field coupling in the case where incident light excites, between the first nano thin-film 1 and the second nano thin-film 2
Cooperation enhancing resonance effects, so that strong asymmetric transmission effect is generated, as shown in Fig. 3 (b), respectively mode I：λ=
When 700nm, AT=39%；Mode II：In λ=645nm, AT=11.8%, the corresponding wave band of two kinds of strong resonance modes is divided equally
It is distributed in visible light, naked eyes are as it can be seen that greatly facilitate the detection of chiral molecules AT signal.
A kind of nanostructure of achievable asymmetric transmission of the present embodiment can generate strong asymmetric transmission effect.
Traditional planar structure realizes asymmetric transmission signal 10% or so, but nanostructure disclosed in the embodiment of the present application can
Strong asymmetric transmission effect is generated, reaches as high as 39%, i.e., when the incident structure of right-handed rotation, has 39% to be converted into emergent light
Left-handed rotation meets the requirement of most of optical polarization devices.In addition, strong between the first nano thin-film 1 and the second nano thin-film 2
Light field coupling can realize enhancing resonance effects, using preparation process prepare simple structure to improve structure prepare essence
Degree, the research for fields such as optical device manufacture, theoretical research, high field enhancing technologies provide new thinking.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (8)
1. a kind of nanostructure of achievable asymmetric transmission, it is characterised in that：The nanostructure is by the first nano thin-film, Jie
Matter layer and the second nano thin-film are sequentially connected composition from top to bottom；
First nano thin-film and the second nano thin-film are identical, by the identical nano unit of multiple structures by rectangle week
Phase array is formed by connecting；Each nano unit is made of a metallic film；
Each nano unit further includes having an inclined rectangular hole, and the rectangular opening long side has with nano unit period direction
One angle α；Rectangle hole site on first nano thin-film and the second nano thin-film corresponds, and up and down；
The metallic film is made of noble metal.
2. nanostructure according to claim 1, it is characterised in that：Thickness h=80nm of the nano unit；It is given an account of
Matter layer thickness d=120nm；Period Px=Py=560 ~ 720nm of the nano unit.
3. nanostructure according to claim 2, it is characterised in that：The length of the rectangular openingl=520 ~ 560nm, it is wide
Spend w=180 ~ 220nm, the long side of rectangular opening and angle α=0 ° ~ 90 ° in nano unit period direction.
4. nanostructure according to claim 1, it is characterised in that：The noble metal is gold or ag material；It is given an account of
Matter layer material is SiO2。
5. the preparation method of the nanostructure of any achievable asymmetric transmission described in -4, feature exist according to claim 1
In：Include the following steps：
Step 1, prepare substrate：Prepare ito glass substrate and cleans drying；
Step 2, resist coating：PMMA photoresist is coated in the ready ito glass substrate of step 1 with photoresist spinner；
Step 3, it is dried after gluing：The substrate of step 2 coating PMMA photoresist is placed on hot plate and is dried；
Step 4, electron beam exposure structure graph：The second of the nanostructure that asymmetric transmission can be achieved is designed with pattern generator
Nano thin-film structure graph, and the substrate with electron beam exposure, after being exposed；
Step 5, develop：Under room temperature, the substrate exposed in step 4 is put into impregnate in developer solution and is developed；
Step 6, it is fixed：Step 5 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, takes substrate after the completion of fixing
Out, with being dried with nitrogen；
Step 7, it is dried after fixing：Step 6 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；
Step 8, noble metal is plated：The substrate dried after step 7 fixing is put into electron beam vacuum evaporating coating machine plating noble metal, is steamed
It is further taken out after having plated cooling 10min~20min；
Step 9, PMMA photoresist is removed：Using lift-off technique, the substrate after step 8 Vacuum Deposition noble metal is steeped in acetone
In, the time is at least 30min, dissolves PMMA photoresist；
Step 10, it dries up：Substrate after drying up the removing PMMA photoresist that step 9 obtains with nitrogen gun, it is non-right to obtain can be achieved
Claim the second nano thin-film of the nanostructure of transmission；
Step 11, dielectric layer is plated：The substrate that step 10 is dried is put into electron beam vacuum evaporating coating machine plating SiO2Layer, as two
Dielectric layer between layer nano thin-film, further takes out after cooling 10min~20min has been deposited；
Step 12, resist coating：PMMA photoresist is coated in the ready substrate of step 11 with photoresist spinner；
Step 13, it is dried after gluing：The substrate of step 12 coating PMMA photoresist is placed on hot plate and is dried；
Step 14, electron beam exposure structure graph：The of the nanostructure that asymmetric transmission can be achieved is designed with pattern generator
One nano thin-film structure graph, and the substrate with electron beam exposure, after being exposed；
Step 15, develop：Under room temperature, the substrate exposed in step 14 is put into impregnate in developer solution and is developed；
Step 16, it is fixed：Step 15 is impregnated the substrate after development and is put into fixing solution and impregnates fixing, by substrate after the completion of fixing
It takes out, with being dried with nitrogen；
Step 17, it is dried after fixing：Step 16 is impregnated after being fixed and the substrate of drying is placed on hot plate and dries；
Step 18, noble metal is plated：The substrate dried after step 17 fixing is put into electron beam vacuum evaporating coating machine plating noble metal,
It is further taken out after cooling 10min~20min has been deposited；
Step 19, PMMA photoresist is removed：Using lift-off technique, the substrate after step 18 Vacuum Deposition noble metal is steeped third
In ketone, the time is at least 30min, dissolves electron beam PMMA photoresist；
Step 20, it dries up：Substrate after drying up the removing PMMA photoresist that step 19 obtains with nitrogen gun obtains described by bilayer
The nanostructure for the achievable asymmetric transmission that nano thin-film is constituted.
6. preparation method according to claim 5, it is characterised in that：Step 1 concrete operations are：Prepare with a thickness of
1.0mm, length and width dimensions are the ito glass of 20.0mm × 20.0mm, and the ito glass of preparation is put into cleaning solution and is cleaned, and use
After deionized water ultrasound 15min, with acetone ultrasound 15min, then with alcohol ultrasound 15min, deionized water ultrasound 5min is used later,
It is put into after finally being dried up with nitrogen gun spare in nitrogen cabinet.
7. preparation method according to claim 5, it is characterised in that：The thickness of photoresist in the step 2 and step 12
For 80nm, the revolving speed of photoresist spinner is 4000rpm, and the time is 60 s；It is dried in the step 3, step 7, step 13 and step 17
Temperature be 150 DEG C, time 3min.
8. preparation method according to claim 5, it is characterised in that：Developer solution is by tetramethyl in the step 5 and step 15
Two pentanone of base and isopropanol are with volume ratio for 3：1 cooperation is made, and the time for impregnating development is 60s；In the step 6 and step 16
The time for impregnating fixing is 60s；The vacuum degree of vacuum evaporating coating machine is not more than 3 × 10- in the step 8 and step 18
6torr, vapor deposition plating noble metal with a thickness of 80nm.
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Application publication date: 20181116 |