CN106328827A - Thin film packaging method - Google Patents
Thin film packaging method Download PDFInfo
- Publication number
- CN106328827A CN106328827A CN201610953768.XA CN201610953768A CN106328827A CN 106328827 A CN106328827 A CN 106328827A CN 201610953768 A CN201610953768 A CN 201610953768A CN 106328827 A CN106328827 A CN 106328827A
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- Prior art keywords
- line
- organic
- coating
- glue
- film encapsulation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application relates to a thin film packaging method, and the devices to be packaged comprises the lead area, wherein the packaging method comprises the steps of (1) coating organic glue line on the lead area of the devices to be packaged, to form the first intermediate; (2) packaging for the first intermediate is implemented by the upward side of the intermediate, so that to form the second intermediate after covering the packaging film on the upward side of the first intermediate; (3) removing the the packaging film and organic glue line covered at the upward side of the lead area of the second intermediate, to reveal the lead are. The thin film packaging method offered by the application implements the method of installing organic glue line in the lead area and removing organic glue line after thin film packaging to reveal the lead area, which can be used in the operations such as binding drive chip/flexible printed circuit board, point screen etc.
Description
Technical field
The application relates to OLED encapsulation field, particularly relates to a kind of film encapsulation method.
Background technology
Film encapsulation method is various, currently mainly uses and forms organo-mineral complexing structure as basic thin-film package side
Method.Use in the thin-film packing structure that this film encapsulation method obtains, play the mainly inorganic layer of water oxygen iris action, because of
This water oxygen barriering effect improving inorganic layer is most important for the packaging effect of thin-film package.Inorganic layer uses thing in early days
The mode film forming of physical vapor deposition (PVD), thin film compactness is poor, and foreign body covering performance is bad, gradually by other film forming sides
Formula replaces.The thin film that the ald (ALD) of employing, chemical gaseous phase deposition (CVD) mode obtain at present has good water
Oxygen barriering effect, applies relatively broad.
But the thin film great majority using above-mentioned thin film-forming method to be formed are all whole film forming, and cannot use mask plate
(mask) reserved lead district, after encapsulation, device is covered by the thin film of whole film forming, and lead district cannot be exposed, and causing cannot be thin
Carry out on film binding the operation such as driving chip (IC)/flexible PCB (FPC), some screen.
Summary of the invention
This application provides a kind of film encapsulation method, it efficiently solves that existing film encapsulation method exists cannot be
Carry out on thin film binding driving chip (IC)/flexible PCB (FPC), the problem of some screen.
This application provides a kind of film encapsulation method, device to be packaged includes lead district；
Method for packing comprises the following steps:
(1) in the described lead district of described device to be packaged, organic glue-line is coated, to form the first intermediate；
(2) by the top of described first intermediate, described first intermediate is packaged, so that described first intermediate
Top cover after encapsulating film and form the second intermediate；
(3) the described encapsulating film of the top covering of the described lead district of described second intermediate and described organic gel are removed
Layer, exposes described lead district.
Preferably, described device to be packaged also includes that OLED, step (2) including:
(21) by the top of described first intermediate to described first intermediate coating inorganic layer, and by described first
The top of mesosome, for the region coating organic layer of corresponding described OLED, forms the second intermediate；
(22) described organic glue-line of described second intermediate is removed, expose described lead district.
Preferably, in described second intermediate formed in step (2), the portion of described organic at least one side of glue-line
Outside subregion is exposed to.
Preferably, in described second intermediate formed in step (2), the end face of described organic glue-line is coated with higher than last
The end face of the described inorganic layer that plating is formed.
Preferably, in step (3), use wet method to remove photoresist and remove organic glue-line.
Preferably, in step (3), described wet method remove photoresist use the glue that goes be alkali liquor.
Preferably, in step (3), remove institute on described organic glue-line of described second intermediate initially with laser dry etching
The described inorganic layer of coating, then uses oxygen gas plasma dry etching to be ashed described organic glue-line.
Preferably, in step (2), described in organic layer described in coating and coating, inorganic layer is alternately.
Preferably, in step (2), first coating inorganic layer, afterwards coating organic layer, finally repaste plating inorganic layer.
Preferably, in described first intermediate that step (1) is formed, the side of described organic glue-line and described lead district
The angle that formed of surface be right angle or obtuse angle.
The technical scheme that the application provides can reach following beneficial effect:
Film encapsulation method provided herein, without using mask, will draw by first arranging organic glue-line in lead district
Line district covering protection, then carries out film wrapping operation, and the method finally removing organic glue-line makes lead district come out, and then
Can carry out binding the operation such as integrated circuit/flexible PCB, some screen.
It should be appreciated that it is only exemplary that above general description and details hereinafter describe, can not be limited this
Application.
Accompanying drawing explanation
The device architecture schematic diagram that organic glue-line is set in lead district that Fig. 1 is provided by the embodiment of the present application；
The schematic diagram of device after organic glue-line in the removal lead district that Fig. 2 is provided by the embodiment of the present application.
1, substrate；2, thin film transistor (TFT)；3, lead district；4, OLED；5, inorganic layer；6, organic layer；7, organic glue-line.
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the application
Example, and for explaining the principle of the application together with description.
Detailed description of the invention
Below by specific embodiment and combine accompanying drawing the application is described in further detail." front " in literary composition,
" afterwards ", "left", "right", " on ", D score is all with the laying state of the device in accompanying drawing as reference.
Existing thin-film package is essentially Inorganic whisker structure, plays the mainly inorganic layer of water oxygen iris action,
Therefore the water oxygen barriering effect improving inorganic layer is most important for the packaging effect of thin-film package.Existing thin-film package
Inorganic layer mainly use the thin film-forming method of CVD/ALD, but the thin film great majority using above-mentioned thin film-forming method to be formed are all whole
Face film forming, encapsulated device is covered by the thin film of whole film forming, causes to carry out binding driving chip/flexible electrical on thin film
The operations such as road plate (IC/FPC), some screen.
In order to solve above-mentioned technical problem, this application provides a kind of film encapsulation method, as shown in Figure 1-2, wherein, treat
The device of encapsulation includes substrate 1, thin film transistor (TFT) 2, lead district 3 and OLED 4, and thin film transistor (TFT) 2 is arranged on substrate 1
On, lead district 3 is embedded in the region of thin film transistor (TFT) 2 and contacts with substrate 1, lead district can be regarded thin film brilliant as
A part for body pipe, OLED 4 is arranged on thin film transistor (TFT) 2 and dodges lead district 3 and is arranged on the side of lead district 3.This
Device to be packaged in application can be flexible device or rigid device.
This method for packing specifically includes following steps:
First, coating organic glue-line 7 in lead district 3, concrete, organic glue-line 7 uses coating processing procedure, with film crystal
Pixel defining layer in pipe 2 processing procedure or planarization layer molding together, do not increase lithographic process.Define after coating organic glue-line 7
First intermediate.Concrete, organic glue-line 7 of the application can select photoresist.
Then, the first intermediate is packaged the top of aforementioned first intermediate, so that the top of the first intermediate
The second intermediate is formed after covering encapsulating film.Concrete method for packing is referred to prior art.
Then, remove encapsulating film and organic glue-line 7 of the top covering of the lead district 3 of the second intermediate, expose lead district
3。
Lead district 3, without using mask, is covered by above-mentioned film encapsulation method by first arranging organic glue-line 7 in lead district 3
Lid protection, then carries out film wrapping operation, and the method finally removing organic glue-line 7 makes lead district 3 come out, and then can
Carry out binding the operation such as integrated circuit/flexible PCB, some screen.
Further, in above-mentioned film encapsulation method, the step being packaged the first intermediate specifically comprises the steps that
First, by the top of the first intermediate to the first intermediate coating inorganic layer 5, and the top by the first intermediate
For the region coating organic layer 6 of corresponding OLED 4, form the second intermediate, concrete, organic layer 6 and nothing in step (2)
The coating sequencing of machine layer 5 does not limits, and alternately, 6 paintings of organic layer are plated in OLED for coating organic layer 6 and coating inorganic layer 5
The region of device 4 correspondence, inorganic layer 5 coating is to carry out overall coating for device to be packaged and form whole film, passes through coating
Organic layer 6 and inorganic layer 5 form the thin-film encapsulation layer with multiple structure.The effect of inorganic layer 5 is to intercept water oxygen, organic layer 6
Effect be to make thin-film encapsulation layer more smooth, compactness is more preferable, can discharge the stress in thin film of inorganic layer 5 simultaneously.Concrete
Deposition sequence can be first coating inorganic layer 5, afterwards coating organic layer 6, finally repastes plating inorganic layer 5.In this application, it is coated with
After having plated, the thin-film encapsulation layer of corresponding OLED 4 is that inorganic layer 5, organic layer 6, inorganic layer 5 three layers stack formation successively
Structure.And outside the region of OLED 4 correspondence, the thin-film encapsulation layer of formation is that inorganic layer 5, inorganic layer 5 stack shape successively
The structure become.
Finally, the organic glue-line 7 in the second intermediate is removed, make lead district 3 come out.Concrete, the application carries
Two kinds of methods removing organic glue-line 7 are supplied.One removes organic glue-line 7, in order to enable glue for using wet method to remove photoresist
Touch organic glue-line 7, in the second intermediate formed in a previous step, therefore, to assure that organic at least one side of glue-line 7
Subregion be exposed to outside, it is preferred that formed the second intermediate a step in, in the second intermediate formed, organic
The end face of inorganic layer 5 that the end face of glue-line 7 is formed higher than last coating, it is possible to be easy to glue contact with organic glue-line 7 and then
Organic glue-line 7 is removed, outside making lead district 3 be exposed to, in order to carry out bind driving chip/flexible PCB (IC/FPC),
The operations such as some screen.The glue that goes in the application can be alkali liquor.
When carrying out wet method and removing photoresist, the application is formed in the step of organic glue-line 7 in coating organic gel, first formed
In intermediate, the surface that organic glue-line 7 is applied as side and lead district 3 is needed to be formed with the structure at obtuse angle or right angle, if
Organic glue-line 7 is applied as the structure of side and the surface formation acute angle of lead district 3, then the inorganic layer 5 of coating will will have
Machine glue-line 7 is completely covered, thus causes wet method to be removed photoresist and cannot realize, because it is completely complete by inorganic layer 5 to go glue to infiltrate into
Organic glue-line 7 of full cladding, and then cause being peeled off with organic glue-line 7 by inorganic layer 5.
Another method removing organic glue-line 7 of the application is to use laser ablation method.Concrete, do initially with laser
Carve the inorganic layer 5 removed on organic glue-line 7, then use oxygen gas plasma dry etching to be ashed organic glue-line 7.Due to laser dry etching
The problem that there is poor selectivity, during carrying out laser dry etching, is susceptible to laser dry etching overetch and corrodes lead-in wire
The metal in district 3, and the purpose that the application arranges organic glue-line 7 makes organic glue-line 7 can provide excessively quarter for laser dry etching exactly
The buffer area of erosion, after removing inorganic layer 5, recycling oxygen gas plasma selectively etches organic glue-line 7, thus will
Lead district 3 comes out.Using common laser dry etching in the application, preferably 1064nm infrared light is removed inorganic layer 5, is made organic gel
Layer 7 exposes.Laser is used to go gluing method relatively low to the structural requirement ratio of organic glue-line 7, the side of organic glue-line 7 and lead district 3
The angle that formed of surface can not be right angle or obtuse angle, formed higher than last coating without the end face making organic glue-line 7
The end face of inorganic layer 5.
These are only the preferred embodiment of the application, be not limited to the application, for those skilled in the art
For Yuan, the application can have various modifications and variations.All within spirit herein and principle, any amendment of being made,
Equivalent, improvement etc., within should be included in the protection domain of the application.
Claims (10)
1. a film encapsulation method, it is characterised in that device to be packaged includes lead district；
Method for packing comprises the following steps:
(1) in the described lead district of described device to be packaged, organic glue-line is coated, to form the first intermediate；
(2) by the top of described first intermediate, described first intermediate is packaged, so that described first intermediate is upper
Side forms the second intermediate after covering encapsulating film；
(3) described encapsulating film and described organic glue-line, the dew of the top covering of the described lead district of described second intermediate are removed
Go out described lead district.
Film encapsulation method the most according to claim 1, it is characterised in that described device to be packaged also includes OLED device
Part, step (2) including:
(21) by the top of described first intermediate to described first intermediate coating inorganic layer, and by described first intermediate
Top for the region coating organic layer of corresponding described OLED, form the second intermediate；
(22) described organic glue-line of described second intermediate is removed, expose described lead district.
Film encapsulation method the most according to claim 2, it is characterised in that in described second formed in step (2)
In mesosome, outside the subregion of described organic at least one side of glue-line is exposed to.
Film encapsulation method the most according to claim 3, it is characterised in that in described second formed in step (2)
In mesosome, the end face of the described inorganic layer that the end face of described organic glue-line is formed higher than last coating.
5., according to the film encapsulation method described in claim 3 or 4, it is characterised in that in step (3), use wet method to remove photoresist and remove
Remove organic glue-line.
Film encapsulation method the most according to claim 5, it is characterised in that in step (3), described wet method remove photoresist use
Removing glue is alkali liquor.
Film encapsulation method the most according to claim 2, it is characterised in that in step (3), go initially with laser dry etching
Except the described inorganic layer of institute's coating on described organic glue-line of described second intermediate, then use oxygen gas plasma dry etching ash
Change described organic glue-line.
8. according to the film encapsulation method described in claim 2,3 or 4, it is characterised in that in step (2), organic described in coating
Described in layer and coating, inorganic layer is alternately.
Film encapsulation method the most according to claim 8, it is characterised in that in step (2), first coating inorganic layer, it
Rear coating organic layer, finally repastes plating inorganic layer.
10. according to the film encapsulation method described in Claims 2 or 3, it is characterised in that step (1) formed described first
In intermediate, the angle that the side of described organic glue-line and the surface of described lead district are formed is right angle or obtuse angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610953768.XA CN106328827B (en) | 2016-10-26 | 2016-10-26 | A kind of film encapsulation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610953768.XA CN106328827B (en) | 2016-10-26 | 2016-10-26 | A kind of film encapsulation method |
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| CN106328827A true CN106328827A (en) | 2017-01-11 |
| CN106328827B CN106328827B (en) | 2018-08-14 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107391853A (en) * | 2017-07-25 | 2017-11-24 | 奇酷互联网络科技（深圳）有限公司 | PCB encapsulates design method and device |
| CN108321308A (en) * | 2018-01-19 | 2018-07-24 | 昆山国显光电有限公司 | Packaging method and display device |
| CN108448010A (en) * | 2018-05-11 | 2018-08-24 | 云谷（固安）科技有限公司 | Display panel and display terminal |
| CN108461659A (en) * | 2018-03-19 | 2018-08-28 | 深圳市华星光电技术有限公司 | OLED film encapsulation methods |
| CN108520921A (en) * | 2018-05-23 | 2018-09-11 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and its packaging method |
| WO2019051920A1 (en) * | 2017-09-13 | 2019-03-21 | 武汉华星光电半导体显示技术有限公司 | Method for encapsulating oled display panel |
| US10734607B2 (en) | 2018-05-23 | 2020-08-04 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode display panel and method for encapsulating same |
| CN114300632A (en) * | 2021-12-16 | 2022-04-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel mother board and manufacturing method of display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107391853A (en) * | 2017-07-25 | 2017-11-24 | 奇酷互联网络科技（深圳）有限公司 | PCB encapsulates design method and device |
| WO2019051920A1 (en) * | 2017-09-13 | 2019-03-21 | 武汉华星光电半导体显示技术有限公司 | Method for encapsulating oled display panel |
| CN108321308A (en) * | 2018-01-19 | 2018-07-24 | 昆山国显光电有限公司 | Packaging method and display device |
| CN108461659A (en) * | 2018-03-19 | 2018-08-28 | 深圳市华星光电技术有限公司 | OLED film encapsulation methods |
| CN108448010A (en) * | 2018-05-11 | 2018-08-24 | 云谷（固安）科技有限公司 | Display panel and display terminal |
| CN108520921A (en) * | 2018-05-23 | 2018-09-11 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and its packaging method |
| US10734607B2 (en) | 2018-05-23 | 2020-08-04 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light emitting diode display panel and method for encapsulating same |
| CN114300632A (en) * | 2021-12-16 | 2022-04-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel mother board and manufacturing method of display panel |
| CN114300632B (en) * | 2021-12-16 | 2023-07-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel motherboard and manufacturing method of display panel |
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| CN106328827B (en) | 2018-08-14 |
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