CN106328806B - A kind of electronic device switch based on magnetoresistance - Google Patents
A kind of electronic device switch based on magnetoresistance Download PDFInfo
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- 238000002955 isolation Methods 0.000 claims abstract description 13
- 239000002070 nanowire Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910003321 CoFe Inorganic materials 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
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- 238000000926 separation method Methods 0.000 claims 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 230000005855 radiation Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
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Abstract
本发明提供一种基于磁阻效应的电子器件开关，该开关包括有源层、隔离层和控制线；其中，有源层包括源电极、漏电极以及连接二者的导电沟道；隔离层覆盖有源层；在隔离层上形成与导电沟道方向一致的控制线。当控制线中无电流流过时，不激发磁场，有源层中的电流从源电极流经导电沟道，从漏电极流出，导电沟道中的电子不受洛伦兹力影响，无磁阻现象，开关处于开态；当控制线中有电流流过时，激发出环形磁场，此时导电沟道中的电子受到洛伦兹力的影响，发生偏转而与沟道表面间的散射加剧，致使载流子沿沟道方向的速度损失，出现磁阻现象，有源层中的电流被关断，开关处于关态。与现有技术相比，本发明具有良好的抗辐射性、开关效率高。
The invention provides an electronic device switch based on the magnetoresistance effect, the switch includes an active layer, an isolation layer and a control line; wherein, the active layer includes a source electrode, a drain electrode and a conductive channel connecting the two; the isolation layer covers An active layer; a control line in the same direction as the conductive channel is formed on the isolation layer. When no current flows in the control line, the magnetic field is not excited, the current in the active layer flows from the source electrode through the conductive channel, and flows out from the drain electrode. The electrons in the conductive channel are not affected by the Lorentz force, and there is no magnetoresistance phenomenon , the switch is in the open state; when there is current flowing in the control line, a circular magnetic field is excited, and the electrons in the conductive channel are affected by the Lorentz force, deflected and the scattering between the surface of the channel is intensified, resulting in a current-carrying The velocity loss along the direction of the channel causes the phenomenon of magnetoresistance, the current in the active layer is turned off, and the switch is in the off state. Compared with the prior art, the invention has good radiation resistance and high switching efficiency.
Description
技术领域technical field
本发明属于电子器件装置，涉及一种基于磁阻效应的电子器件开关。The invention belongs to electronic device devices, and relates to an electronic device switch based on magnetoresistance effect.
背景技术Background technique
电子开关是指利用电子元器件和电路实现通断控制的单元，传统的开关器件均由半导体材料制备而成，例如，最常见的金属氧化物半导体场效应晶体管(MOSFET)可以通过栅电压控制电流在开态与关态之间自由切换，实现开关作用。又如，晶闸管(Thyristor)，它具有整流特性，可以在高电压、大电流条件下工作，是典型的通过小电流控制大电流通断的电子元件。An electronic switch refers to a unit that uses electronic components and circuits to achieve on-off control. Traditional switching devices are made of semiconductor materials. For example, the most common metal-oxide-semiconductor field-effect transistor (MOSFET) can control the current through the gate voltage. Switch freely between the on state and the off state to realize the switch function. Another example is a thyristor, which has rectification characteristics and can work under high voltage and high current conditions. It is a typical electronic component that controls large current on and off through small current.
然而，MOSFET作为电子开关使用时，其栅介质在栅电压的不断作用下会发生退化，开关的耐久性并不理想。而晶闸管的工作状态是要有载流子参与的大注入状态，大量的正负电荷的产生与消失都需要很长时间，所以晶闸管的导通与关断时间都较长，工作频率也较低。再者，由于这些传统的开关器件都是基于半导体材料的，其抗辐射能力弱，在高能粒子入射的情况下，可能出现失效的情况，限制了其在航天领域的应用。However, when the MOSFET is used as an electronic switch, its gate dielectric will degrade under the continuous action of the gate voltage, and the durability of the switch is not ideal. The working state of the thyristor is a large injection state with the participation of carriers. It takes a long time to generate and disappear a large amount of positive and negative charges, so the turn-on and turn-off time of the thyristor is longer and the operating frequency is lower. . Furthermore, since these traditional switching devices are based on semiconductor materials, their radiation resistance is weak, and they may fail when high-energy particles are incident, which limits their application in the aerospace field.
发明内容Contents of the invention
针对以上问题，本发明提供了一种基于磁阻效应的电子器件开关，以改善现有的公知技术。In view of the above problems, the present invention provides an electronic device switch based on the magnetoresistance effect to improve the existing known technology.
本发明的目的在于提供一种基于磁阻效应的电子器件开关。The object of the present invention is to provide an electronic device switch based on the magnetoresistance effect.
本发明的一种基于磁阻效应的电子器件开关包括：有源层、隔离层、控制线；其中，有源层包括源电极、漏电极以及连接二者的导电沟道；隔离层覆盖有源层；在隔离层上形成与导电沟道方向一致的控制线。当控制线中无电流流过时，不激发磁场，有源层中的电流从源电极流经导电沟道，从漏电极流出，导电沟道中的电子不受洛伦兹力影响，无磁阻现象，开关处于开态；当控制线中有电流流过时，激发出环形磁场，此时导电沟道中的电子受到洛伦兹力的影响，发生偏转而与沟道表面间的散射加剧，致使载流子沿沟道方向的速度损失，出现磁阻现象，有源层中的电流被关断，开关处于关态。当导电沟道的尺寸越小时，只需微弱的偏转即可使载流子与界面发生碰撞，磁阻效应反而越大。A magnetoresistance effect-based electronic device switch of the present invention includes: an active layer, an isolation layer, and a control line; wherein, the active layer includes a source electrode, a drain electrode, and a conductive channel connecting the two; the isolation layer covers the active layer; forming a control line in the same direction as the conductive channel on the isolation layer. When no current flows in the control line, the magnetic field is not excited, the current in the active layer flows from the source electrode through the conductive channel, and flows out from the drain electrode. The electrons in the conductive channel are not affected by the Lorentz force, and there is no magnetoresistance phenomenon , the switch is in the open state; when there is current flowing in the control line, a circular magnetic field is excited, and the electrons in the conductive channel are affected by the Lorentz force, deflected and the scattering between the surface of the channel is intensified, resulting in a current-carrying The speed loss along the direction of the channel, the magnetoresistance phenomenon occurs, the current in the active layer is turned off, and the switch is in the off state. When the size of the conductive channel is smaller, only a weak deflection is needed to cause the carriers to collide with the interface, and the magnetoresistance effect is larger.
进一步地，本发明所述有源层，可以是具有磁阻效应的磁性材料，如CoFe、CoFeB、NiFe，也可以是具有磁阻效应的半导体材料，如硅、石墨烯；导电沟道的结构可以是单根的一维纳米线，也可以是多根一维纳米线的并联，甚至可以是无限多根纳米线并联等效成的连续导电薄膜。Further, the active layer of the present invention can be a magnetic material with a magnetoresistance effect, such as CoFe, CoFeB, NiFe, or a semiconductor material with a magnetoresistance effect, such as silicon and graphene; the structure of the conductive channel It can be a single one-dimensional nanowire, or a parallel connection of multiple one-dimensional nanowires, or even a continuous conductive film equivalent to infinitely many nanowires connected in parallel.
进一步地，本发明所述的隔离层，是具有电学隔离性质的介质材料，如Al2O3、MgO。Further, the isolation layer of the present invention is a dielectric material with electrical isolation properties, such as Al 2 O 3 and MgO.
进一步地，本发明所述的控制线，是具有低电阻率的金属材料或其复合叠层，如Al、Ag、Pt、Cu、Ti。Furthermore, the control line of the present invention is a metal material with low resistivity or its composite laminate, such as Al, Ag, Pt, Cu, Ti.
本发明的优点和积极效果如下：Advantage of the present invention and positive effect are as follows:
1)本发明提出的电子器件开关可以采用磁性材料制备，相比于半导体材料而言，不会受到射线的影响而产生电子空穴对，因此具有良好的抗辐射性；1) The electronic device switch proposed by the present invention can be made of magnetic materials. Compared with semiconductor materials, it will not be affected by radiation to generate electron-hole pairs, so it has good radiation resistance;
2)本发明通过在控制线中通断电流来控制磁场的存在，进而实现开关特性，理论上来说可以进行无限次的开与关，具有很好的耐久性；2) The present invention controls the existence of the magnetic field by turning on and off the current in the control line, and then realizes the switching characteristics. In theory, it can be turned on and off infinitely, and has good durability;
3)本发明可以通过增大控制线中的电流强度和减小有源层中的导电沟道尺寸来提高开关速度；3) The present invention can increase the switching speed by increasing the current intensity in the control line and reducing the size of the conductive channel in the active layer;
4)有源层中的导电沟道无论是单根纳米线，还是多根纳米线并联结构，亦或是连续的导电薄膜，都可以由一条控制线来实现电流的通断，开关效率高；4) Whether the conductive channel in the active layer is a single nanowire, a parallel structure of multiple nanowires, or a continuous conductive film, the current can be switched on and off by a control line, and the switching efficiency is high;
5)可以通过传统的集成电路制造技术将本发明制备成微型开关器件，也可以做成大尺寸的分立型电子开关元件。5) The present invention can be prepared into a micro switch device through traditional integrated circuit manufacturing technology, and can also be made into a large-sized discrete electronic switch element.
附图说明Description of drawings
图1为基于磁阻效应的电子器件开关的三维示意图；Fig. 1 is a three-dimensional schematic diagram of an electronic device switch based on the magnetoresistance effect;
图2为基于磁阻效应的电子器件开关处于开态时的剖面图；Fig. 2 is the sectional view when the switch of the electronic device based on the magnetoresistance effect is in the open state;
图3为基于磁阻效应的电子器件开关处于关态时的剖面图；Fig. 3 is the sectional view when the switch of the electronic device based on the magnetoresistance effect is in the off state;
图4为图1-3的图例。Figure 4 is a legend for Figures 1-3.
具体实施方式Detailed ways
根据下列步骤可以实现有源层导电沟道为CoFe材料的电子器件开关：According to the following steps, an electronic device switch in which the conductive channel of the active layer is a CoFe material can be realized:
1)在二氧化硅的基片上淀积一层100nm的CoFe材料作为有源层；1) Deposit a layer of 100nm CoFe material on a silicon dioxide substrate as an active layer;
2)通过光刻技术定义源漏电极和导电沟道，源漏电极一般为微米级别的大块图形，作为流入电流和流出电流的端口；而导电沟道是跨接在源电极和漏电极之间的电子运输通路，其结构可以是单根的一维纳米线，也可以是多根一维纳米线的并联，甚至可以是无限多根纳米线并联等效成的连续导电薄膜，要求作为导电沟道的纳米线或是薄膜的尺寸要小于源漏电极的尺寸，如纳米线的直径或薄膜的厚度一般为纳米级别；2) The source-drain electrodes and the conductive channel are defined by photolithography. The source-drain electrodes are generally micron-level large-scale patterns, which serve as ports for inflow and outflow current; and the conductive channel is connected between the source electrode and the drain electrode. The electron transport path between them, its structure can be a single one-dimensional nanowire, it can also be a parallel connection of multiple one-dimensional nanowires, or even a continuous conductive film equivalent to an infinite number of nanowires connected in parallel, which is required as a conductive The size of the nanowire or film of the channel is smaller than the size of the source and drain electrodes, such as the diameter of the nanowire or the thickness of the film is generally at the nanometer level;
3)以光刻胶为掩蔽，刻蚀CoFe材料，形成大块的源漏电极和跨接在源漏电极之间的导电沟道，构成源漏电极和导电沟道的材料均为有源层材料(即CoFe)；3) Use photoresist as a mask to etch the CoFe material to form a large source-drain electrode and a conductive channel across the source-drain electrode. The materials that constitute the source-drain electrode and the conductive channel are active layers material (i.e. CoFe);
4)淀积一层MgO材料作为隔离层，隔离层覆盖有源层；4) Depositing a layer of MgO material as an isolation layer, the isolation layer covers the active layer;
5)淀积一层金属Ti材料，金属Ti材料覆盖隔离层；5) Depositing a layer of metal Ti material, and the metal Ti material covers the isolation layer;
6)通过光刻技术定义控制线，控制线一般为与导电沟道方向一致的线状图形，作为电流激发磁场以引起磁阻效应的来源；控制线的尺寸越大，其中通以的电流强度就越大，激发的磁场越强，引起的磁阻效应越强；6) The control line is defined by photolithography technology. The control line is generally a linear pattern consistent with the direction of the conductive channel, which is used as the source of the current excitation magnetic field to cause the magnetoresistance effect; the larger the size of the control line, the greater the current intensity passing through it. The larger the value, the stronger the excited magnetic field and the stronger the magnetoresistance effect caused;
7)以光刻胶为掩蔽，刻蚀金属Ti材料，形成与有源层中的导电沟道方向一致的金属Ti控制线。7) Using the photoresist as a mask to etch the metal Ti material to form a metal Ti control line in the same direction as the conductive channel in the active layer.
本发明实施例并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案作出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均仍属于本发明技术方案保护的范围内。The embodiments of the present invention are not intended to limit the present invention. Any person familiar with the art, without departing from the scope of the technical solution of the present invention, can use the methods and technical content disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent implementation of equivalent changes example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention, which do not deviate from the technical solution of the present invention, still fall within the protection scope of the technical solution of the present invention.
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| CN1732573A (en) * | 2002-12-25 | 2006-02-08 | 松下电器产业株式会社 | Magnetic switch element and magnetic memory using same |
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