CN106328806A - Electronic device switch based on magnetoresistive effect - Google Patents
Electronic device switch based on magnetoresistive effect Download PDFInfo
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- CN106328806A CN106328806A CN201610751139.9A CN201610751139A CN106328806A CN 106328806 A CN106328806 A CN 106328806A CN 201610751139 A CN201610751139 A CN 201610751139A CN 106328806 A CN106328806 A CN 106328806A
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- electronic device
- switch
- magnetoresistance
- active layer
- device based
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
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Abstract
The invention provides an electronic device switch based on a magnetoresistive effect. The switch comprises an active layer, an isolating layer and a control line; wherein, the active layer comprises a source electrode, a drain electrode and a conducting channel for connecting the both; the isolating layer covers the active layer; and the control line consistent with the conducting channel in direction is formed on the isolating layer. When no current flows through the control line, a magnetic field is not excited, the current in the active layer flows from the source electrode to the conducting channel and flows out of the drain electrode, electrons in the conducting channel are not influenced by Lorentz force, a magnetoresistive phenomenon is avoided, and the switch is turned on; when current flows through the control line, an annular magnetic field is excited, electrons in the conducting channel deflect under the influence of Lorentz force and are scattered intensively from the surface of the channel, the speed of current carrier in the channel direction is lost, a magnetoresistive phenomenon appears, the current in the active layer is cut off, and the switch is turned off. Compared with the prior art, the electronic device switch has the advantages of good radiation resistance and high efficiency.
Description
Technical field
The invention belongs to electronic component device, relate to a kind of electronic device based on magnetoresistance switch.
Background technology
Electrical switch refers to utilize the unit that electronic devices and components and circuit realiration break-make control, traditional switching device by
Semi-conducting material is prepared from, and such as, modal mos field effect transistor (MOSFET) can pass through
Gate voltage controls electric current and freely switches between ON state and OFF state, it is achieved on-off action.And for example, IGCT (Thyristor), it
There is rectification characteristic, can work under high voltage, big current condition, typically by the big current switching of Small current control
Electronic component.
But, when MOSFET uses as electrical switch, its gate medium can be degenerated under the constantly effect of gate voltage,
The durability of switch is unsatisfactory.And the duty of IGCT be intended to carrier participate in big injection state, substantial amounts of just
The generation of negative charge and disappearance are required for for a long time, so the conducting of IGCT is the longest with the turn-off time, operating frequency is also
Relatively low.Furthermore, the switching device traditional due to these is all based on semi-conducting material, and its capability of resistance to radiation is weak, at high energy grain
In the case of sub-incidence, in fact it could happen that the situation of inefficacy, limit its application at space industry.
Summary of the invention
For problem above, the invention provides a kind of electronic device based on magnetoresistance switch, existing to improve
Known technology.
It is an object of the invention to provide a kind of electronic device based on magnetoresistance switch.
A kind of based on magnetoresistance the electronic device switch of the present invention includes: active layer, sealing coat, control line；Wherein,
Active layer includes source electrode, drain electrode and connects the conducting channel of the two；Sealing coat is coated with active layer；Sealing coat is formed
The control line consistent with conducting channel direction.When no current flows through in control line, do not excite magnetic field, the electric current in active layer from
Source electrode flows through conducting channel, flows out from drain electrode, and the electronics in conducting channel is not affected by Lorentz force, without Magnetoresistance Phenomena,
Switch is in ON state；When there being electric current to flow through in control line, inspiring toroidal magnetic field, now the electronics in conducting channel is by Lip river
The impact of Lun Zili, deflect and and between channel surface scattering aggravation, cause carrier along the speed loss of channel direction,
Magnetoresistance Phenomena occur, the electric current in active layer is turned off, and switch is in OFF state.When conducting channel size more hour, only need micro-
Weak deflection can make carrier collide with interface, and magnetoresistance is the biggest.
Further, active layer of the present invention, can be the magnetic material with magnetoresistance, as CoFe, CoFeB,
NiFe, it is also possible to be the semi-conducting material with magnetoresistance, such as silicon, Graphene；The structure of conducting channel can be single
One-dimensional nano line, it is also possible to be the parallel connection of many one-dimensional nano lines, it might even be possible to be that the most nano wire parallel equivalent become
Continuous conduction thin film.
Further, sealing coat of the present invention, is the dielectric material with electric isolation character, such as Al2O3、MgO。
Further, control line of the present invention, is metal material or its composite laminate with low-resistivity, as
Al、Ag、Pt、Cu、Ti。
Advantages of the present invention and good effect are as follows:
1) the electronic device switch that the present invention proposes can use magnetic material to prepare, for semi-conducting material,
Will not be affected by ray and be produced electron hole pair, therefore be there is good radiation resistance；
2) present invention controls the existence in magnetic field by electric current of make-and-break in control line, and then realizes switching characteristic, theoretical
Unlimited number of Push And Release can be carried out on, there is good durability；
3) present invention can come by increasing the current intensity in control line and the conducting channel size reduced in active layer
Improve switching speed；
4) the either single nano-wire of the conducting channel in active layer, or many nano wire parallel-connection structures, also or even
Continuous conductive film, can be realized the break-make of electric current by a control line, and switch efficiency is high；
5) by traditional ic manufacturing technology, the present invention can be prepared as micro-switching device, it is also possible to make
Large-sized discrete type electronic switching element.
Accompanying drawing explanation
Fig. 1 is the schematic three dimensional views of electronic device based on magnetoresistance switch；
Fig. 2 is the profile that electronic device based on magnetoresistance switchs when being in ON state；
Fig. 3 is the profile that electronic device based on magnetoresistance switchs when being in OFF state；
Fig. 4 is the legend of Fig. 1-3.
Detailed description of the invention
Can realize, according to the following step, the electronic device that active layer conducting channel is CoFe material to switch:
1) on the substrate of silicon dioxide, the CoFe material of one layer of 100nm is deposited as active layer；
2) by photoetching technique definition source-drain electrode and conducting channel, source-drain electrode is generally the bulk figure of micron level
Shape, as inflow current and the port of outflow electric current；And conducting channel is the electronics fortune being connected across between source electrode and drain electrode
Transmission path, its structure can be single one-dimensional nano line, it is also possible to be the parallel connection of many one-dimensional nano lines, it might even be possible to be nothing
Limit the continuous conduction thin film that many nano wire parallel equivalent become, it is desirable to nano wire or the size of thin film as conducting channel are wanted
It is generally Nano grade less than the size of source-drain electrode, the such as diameter of nano wire or the thickness of thin film；
3) with photoresist for sheltering, etch CoFe material, form the source-drain electrode of bulk and be connected across between source-drain electrode
Conducting channel, the material constituting source-drain electrode and conducting channel is active layer material (i.e. CoFe)；
4) one layer of MgO material of deposit is coated with active layer as sealing coat, sealing coat；
5) deposit layer of metal Ti material, metal Ti material covers sealing coat；
6) defining control line by photoetching technique, control line is generally the threadlike graph consistent with conducting channel direction, makees
Excite magnetic field to cause the source of magnetoresistance for electric current；The size of control line is the biggest, and the current intensity wherein passed to is the biggest,
The magnetic field excited is the strongest, and the magnetoresistance caused is the strongest；
7) with photoresist for sheltering, etch metal Ti material, form the gold consistent with the conducting channel direction in active layer
Belong to Ti control line.
The embodiment of the present invention is not limited to the present invention.Any those of ordinary skill in the art, without departing from this
Under bright technical scheme ambit, technical solution of the present invention is made many by the method and the technology contents that all may utilize the disclosure above
Possible variation and modification, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from technical solution of the present invention
Content, the technical spirit of the foundation present invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, the most still belongs to
In the range of technical solution of the present invention is protected.
Claims (9)
1. electronic device based on a magnetoresistance switch, it is characterised in that this electronic device switch includes active layer, isolation
Layer and control line；Wherein, active layer is made up of source electrode, drain electrode and conducting channel, and conducting channel is positioned at source electrode and electric leakage
Between pole；Conducting channel is the electronics trafficking pathways being connected across between source electrode and drain electrode, and its structure is a single wiener
Rice noodle, or the parallel connection of many one-dimensional nano lines, or the continuous conduction thin film that the most nano wire parallel equivalent become, every
Absciss layer is coated with active layer；Sealing coat is formed the control line consistent with conducting channel direction.
2. electronic device based on magnetoresistance switch as claimed in claim 1, it is characterised in that the source electricity of described active layer
Pole and drain electrode use the magnetic material with magnetoresistance.
3. electronic device based on magnetoresistance switch as claimed in claim 2, it is characterised in that described magnetic material is
CoFe, CoFeB or NiFe.
4. electronic device based on magnetoresistance switch as claimed in claim 1, it is characterised in that the source electricity of described active layer
Pole and drain electrode use the semi-conducting material with magnetoresistance.
5. electronic device based on magnetoresistance switch as claimed in claim 4, it is characterised in that described semi-conducting material is
Silicon or Graphene.
6. electronic device based on magnetoresistance switch as claimed in claim 1, it is characterised in that described sealing coat uses tool
There is the dielectric material of electric isolation character.
7. electronic device based on magnetoresistance switch as claimed in claim 6, it is characterised in that described dielectric material is
Al2O3Or MgO.
8. electronic device based on magnetoresistance switch as claimed in claim 1, it is characterised in that described control line uses tool
There are metal material and the composite laminate thereof of low-resistivity.
9. electronic device based on magnetoresistance switch as claimed in claim 8, it is characterised in that described metal material is
Al, Ag, Pt, Cu or Ti.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610751139.9A CN106328806B (en) | 2016-08-29 | 2016-08-29 | A kind of electronic device switch based on magnetoresistance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610751139.9A CN106328806B (en) | 2016-08-29 | 2016-08-29 | A kind of electronic device switch based on magnetoresistance |
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| Publication Number | Publication Date |
|---|---|
| CN106328806A true CN106328806A (en) | 2017-01-11 |
| CN106328806B CN106328806B (en) | 2018-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610751139.9A Active CN106328806B (en) | 2016-08-29 | 2016-08-29 | A kind of electronic device switch based on magnetoresistance |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1732573A (en) * | 2002-12-25 | 2006-02-08 | 松下电器产业株式会社 | Magnetic switching device and magnetic memory using the same |
| CN101060135A (en) * | 2007-06-05 | 2007-10-24 | 北京大学 | A double silicon nanowire wrap gate field-effect transistor and its manufacture method |
| CN104766879A (en) * | 2014-01-02 | 2015-07-08 | 格罗方德半导体公司 | Semiconductor device with multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation |
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2016
- 2016-08-29 CN CN201610751139.9A patent/CN106328806B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1732573A (en) * | 2002-12-25 | 2006-02-08 | 松下电器产业株式会社 | Magnetic switching device and magnetic memory using the same |
| CN101060135A (en) * | 2007-06-05 | 2007-10-24 | 北京大学 | A double silicon nanowire wrap gate field-effect transistor and its manufacture method |
| CN104766879A (en) * | 2014-01-02 | 2015-07-08 | 格罗方德半导体公司 | Semiconductor device with multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation |
Non-Patent Citations (1)
| Title |
|---|
| WOOYOUNG SHIM等: "Programmable Resistive-Switch Nanowire Transistor Logic Circuits", 《NANO LETTERS》 * |
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| CN106328806B (en) | 2018-10-19 |
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