CN106328719A - Schottky diode processing method and Schottky diode - Google Patents
Schottky diode processing method and Schottky diode Download PDFInfo
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- CN106328719A CN106328719A CN201510329110.7A CN201510329110A CN106328719A CN 106328719 A CN106328719 A CN 106328719A CN 201510329110 A CN201510329110 A CN 201510329110A CN 106328719 A CN106328719 A CN 106328719A
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- 238000003672 processing method Methods 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- 229910002601 GaN Inorganic materials 0.000 claims description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 29
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 26
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 25
- 239000004411 aluminium Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052733 gallium Inorganic materials 0.000 claims description 25
- 238000003475 lamination Methods 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 230000003647 oxidation Effects 0.000 claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 125000004494 ethyl ester group Chemical group 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a Schottky diode processing method and a Schottky diode. The Schottky diode processing method comprises steps: an AlGaN layer and a composite insulated layer are sequentially formed on the front surface of a substrate with a GaN layer, wherein the composite insulated layer comprises a first insulated layer and a second insulated layer which are overlapped; a corresponding composite insulated layer above a cathode area of the GaN layer is removed to enable a first contact hole capable of exposing the cathode area of the GaN layer to be formed; a corresponding composite insulated layer above an anode area of the GaN layer is removed to enable a second contact hole capable of exposing the anode area of the GaN layer to be formed, wherein the aperture of the second contact hole corresponding to the first insulated layer is larger than that of the second contact hole corresponding to the second insulated layer; and metal electrodes are formed in the first contact hole and the second contact hole, and the Schottky diode is made. Thus, through the technical scheme provided by the invention, reverse leakage can be reduced, and the device structure is optimized.
Description
Technical field
The present invention relates to semiconductor processing technology field, in particular to a kind of Schottky diode
Processing method and a kind of Schottky diode.
Background technology
At present, the Schottky diode of GaN (gallium nitride) base have that switching speed is fast, field intensity is high and
The advantages such as thermal characteristic is good, have good development prospect in power rectifier market.
In correlation technique, as it is shown in figure 1, the basic structure of Schottky diode includes: substrate
101, gallium nitride layer 102, nitrogen gallium aluminium lamination 103, insulating barrier 104 and metal level (105 He in figure
Shown in 106), the problem serious in order to solve Schottky reverse leakage, CMOS
(Complementary Metal Oxide Semiconductor compensates metal-oxide semiconductor (MOS)) work
Skill is applied to little live width, the batch production of high-precision transistor, for example with CMOS technology
Prepare schottky junction terminal etc., can be while reducing the size of Schottky diode, in certain journey
Reverse leakage is reduced on degree, but, use the advanced technologies such as CMOS technology still cannot realize
Extremely low leakage current, causes the poor reliability of Schottky diode.
Therefore, the scheme of processing method of a kind of new Schottky diode how is designed to obtain low drain
Electricity, the Schottky diode of low cost become technical problem urgently to be resolved hurrily.
Summary of the invention
The present invention is based at least one above-mentioned technical problem, it is proposed that a kind of Schottky diode
Processing method and a kind of Schottky diode, at guarantee process compatible while CMOS technology,
Significantly reducing the reverse leakage of Schottky diode, the device improving Schottky diode is reliable
Property.
Realize above-mentioned purpose, embodiment according to the first aspect of the invention, it is provided that a kind of Schottky
The processing method of diode, including: sequentially form nitrogen gallium in the front of the substrate being formed with gallium nitride layer
Aluminium lamination and composite insulation layer, described composite insulation layer includes the first insulating barrier and second insulation of stacking
Layer；Remove composite insulation layer corresponding above the cathode zone of described gallium nitride layer, expose to be formed
First contact hole of the cathode zone of described gallium nitride layer；Remove on the anode region of described gallium nitride layer
The composite insulation layer that side is corresponding, to form the second contact of the anode region exposing described gallium nitride layer
Hole, wherein, the aperture of the second contact hole that described first insulating barrier is corresponding is more than described second insulating barrier
The aperture of the second corresponding contact hole；Metal is formed at described first contact hole and described second contact hole
Electrode, to complete the making of described Schottky diode.
In this technical scheme, by forming the first contact hole above cathode zone and anode region
Second contact hole of top, and the second contact hole is in rank arrangement of falling from power, and has defined metal, has been combined absolutely
The anode electrode that edge layer and nitrogen gallium aluminium lamination are constituted, the especially improvement of composite insulation layer, at Schottky two
When pole pipe turns off, the projection of composite insulation layer ensure that rapidly switching off of device, ensure that simultaneously
The low on state characteristic of Schottky diode, improves the reliability of Schottky diode.
In technique scheme, it is preferable that in the front shape successively of the substrate being formed with gallium nitride layer
Become nitrogen gallium aluminium lamination and composite insulation layer, including step in detail below: in the front of described semiconductor base
After sequentially forming described gallium nitride layer and described nitrogen gallium aluminium lamination, use chemical vapor deposition method described
Forming described first insulating barrier above nitrogen gallium aluminium lamination, wherein, described first insulating barrier is silicon nitride layer.
In this technical scheme, by forming the first insulating barrier, it is achieved that the negative electrode of Schottky diode
Isolation between region and anode region, thus ensure that the electrical reliability of Schottky diode.
In technique scheme, it is preferable that also include: be just formed with the substrate of gallium nitride layer
Face sequentially forms nitrogen gallium aluminium lamination and composite insulation layer, also includes step in detail below: described first exhausted
Organic oxide layer and/or inorganic oxide layer is formed, with described organic oxidation layer and/or described nothing in edge layer
Machine oxide layer is as described second insulating barrier, and wherein, described inorganic oxide layer includes silicon oxide layer, institute
State organic oxidation layer and include tetraethyl orthosilicate layer.
In this technical scheme, by forming the second insulating barrier, ensure that further cathode zone and
Isolation between anode region, namely when the first insulating barrier is more loose, by increasing by the second insulation
Layer, compensates the fault of construction of the first insulating barrier, uses thermal oxidation technology and/or silicic acid four
Ethyl ester deposition technology forms the oxide-film of densification.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, including step in detail below: use thermal oxidation technology to be formed on described first insulating barrier described
Oxide layer.
In this technical scheme, on the first insulating barrier, form oxide layer by thermal oxidation technology, promote
The reliability of insulating barrier, reduces the possibility that insulation layer fails causes the fault of Schottky diode
Property.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, also includes step in detail below: use chemical vapor deposition method on described first insulating barrier
Form described oxide layer.
In this technical scheme, on the first insulating barrier, form oxidation by chemical vapor deposition method
Layer, while ensureing the reliability of insulating barrier, the most additionally improves process costs, is more suitable for Schottky
The batch production of diode.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, also includes step in detail below: use low pressure tetrasilicic acid ethyl ester depositing technics described first exhausted
Described tetrasilicic acid methacrylate layer is formed in edge layer.
In this technical scheme, prepare tetrasilicic acid methacrylate layer by low pressure tetrasilicic acid ethyl ester depositing technics,
Ensure that the compactness of insulating barrier, simultaneously, it is ensured that the homogeneity of insulating barrier is good, and stress is little.
In technique scheme, it is preferable that in described first contact hole and described second contact hole shape
Become metal electrode, to complete the making of described Schottky diode, including step in detail below: use
A kind of technique in metal sputtering processes, evaporation process and electroplating technology or any group of kinds of processes
Close, described first contact hole is formed the cathode electrode of described cathode zone.
In this technical scheme, by forming metal electrode at the first contact hole and the second contact hole, really
Protect the hardware foundation that Schottky diode is integrated in application-level circuitry.
In technique scheme, it is preferable that remove above the anode region of described gallium nitride layer corresponding
Composite insulation layer, to form the second contact hole of anode region exposing described gallium nitride layer, also
Including step in detail below: formed after described cathode electrode, use etching technics to described second exhausted
Edge layer is patterned process, to form the second insulating barrier mask；Cover forming described second insulating barrier
After film, described first insulating barrier is carried out photoetching treatment and etching processing, to form described second contact
Hole, wherein, the cross-sectional area of described second insulating barrier mask is less than the first insulating barrier through over etching
Cross-sectional area, by and do not covered by described second insulating barrier mask in the first insulating barrier of over etching
Region is as supplemantary electrode region.
In this technical scheme, by forming supplemantary electrode region, improve the pass of Schottky diode
Disconnected control ability, improves the device reliability of Schottky diode, and the most additional process does not becomes
This, be conducive to the Schottky diode of low reverse leakage, low conducting voltage is carried out popularization and application.
In technique scheme, it is preferable that in described first contact hole and described second contact hole shape
Become metal electrode, to complete the making of described Schottky diode, also include step in detail below: adopt
With a kind of technique in metal sputtering processes, evaporation process and electroplating technology or any group of kinds of processes
Close, described second contact hole is formed the cathode zone electrode of described cathode zone, wherein, described
Cathode zone electrode, the electrode nitrogen gallium aluminium lamination corresponding with described cathode zone in described supplemantary electrode region
Together constitute the anode electrode of described Schottky diode.
In this technical scheme, by forming cathode electrode and anode electrode, define Schottky two pole
The hardware foundation of pipe, it is ensured that Schottky diode realizes its switch control functions.
According to the second aspect of the invention, it is also proposed that a kind of Schottky diode, such as above-mentioned skill is used
The processing method of the Schottky diode described in any one in art scheme is made.
By above technical scheme, improve the device reliability of Schottky diode, the most extra
Increase process costs, be conducive to pushing away the Schottky diode of low reverse leakage, low conducting voltage
Wide application.
Accompanying drawing explanation
Fig. 1 shows the generalized section of Schottky diode in correlation technique；
Fig. 2 shows the signal stream of the processing method of Schottky diode according to an embodiment of the invention
Cheng Tu；
Fig. 3 to Fig. 7 shows the course of processing of Schottky diode according to an embodiment of the invention
Generalized section.
Detailed description of the invention
In order to be more clearly understood that the above-mentioned purpose of the present invention, feature and advantage, below in conjunction with attached
The present invention is further described in detail by figure and detailed description of the invention.It should be noted that not
In the case of conflict, the feature in embodiments herein and embodiment can be mutually combined.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but,
The present invention can implement to use other to be different from other modes described here, therefore, and the present invention
Protection domain do not limited by following public specific embodiment.
Fig. 2 shows the signal stream of the processing method of Schottky diode according to an embodiment of the invention
Cheng Tu.
As in figure 2 it is shown, the processing method of Schottky diode according to an embodiment of the invention, bag
Include: step S1, sequentially form nitrogen gallium aluminium lamination in the front of the substrate being formed with gallium nitride layer and be combined
Insulating barrier, described composite insulation layer includes the first insulating barrier and second insulating barrier of stacking；Step
S2, removes composite insulation layer corresponding above the cathode zone of described gallium nitride layer, exposes to be formed
First contact hole of the cathode zone of described gallium nitride layer；Step S3, removes described gallium nitride layer
Composite insulation layer corresponding above anode region, to form the anode region exposing described gallium nitride layer
The second contact hole, wherein, the aperture of the second contact hole that described first insulating barrier is corresponding is more than described
The aperture of the second contact hole that the second insulating barrier is corresponding；Step S4, in described first contact hole and institute
State the second contact hole and form metal electrode, to complete the making of described Schottky diode.
In this technical scheme, by forming the first contact hole above cathode zone and anode region
Second contact hole of top, and the second contact hole is in rank arrangement of falling from power, and has defined metal, has been combined absolutely
The anode electrode that edge layer and nitrogen gallium aluminium lamination are constituted, the especially improvement of composite insulation layer, at Schottky two
When pole pipe turns off, the projection of composite insulation layer ensure that rapidly switching off of device, ensure that simultaneously
The low on state characteristic of Schottky diode, improves the reliability of Schottky diode.
In technique scheme, it is preferable that in the front shape successively of the substrate being formed with gallium nitride layer
Become nitrogen gallium aluminium lamination and composite insulation layer, including step in detail below: step S11, at described quasiconductor
After the front of substrate sequentially forms described gallium nitride layer and described nitrogen gallium aluminium lamination, use chemical vapor deposition
Technique forms described first insulating barrier above described nitrogen gallium aluminium lamination, and wherein, described first insulating barrier is
Silicon nitride layer.
In this technical scheme, by forming the first insulating barrier, it is achieved that the negative electrode of Schottky diode
Isolation between region and anode region, thus ensure that the electrical reliability of Schottky diode.
In technique scheme, it is preferable that also include: be just formed with the substrate of gallium nitride layer
Face sequentially forms nitrogen gallium aluminium lamination and composite insulation layer, also includes step in detail below: step S12,
Organic oxide layer and/or inorganic oxide layer is formed, with described organic oxidation layer on described first insulating barrier
And/or described inorganic oxide layer is as described second insulating barrier, wherein, described inorganic oxide layer includes
Silicon oxide layer, described organic oxidation layer includes tetraethyl orthosilicate layer.
In this technical scheme, by forming the second insulating barrier, ensure that further cathode zone and
Isolation between anode region, namely when the first insulating barrier is more loose, by increasing by the second insulation
Layer, compensates the fault of construction of the first insulating barrier, uses thermal oxidation technology and/or silicic acid four
Ethyl ester deposition technology forms the oxide-film of densification.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, including step in detail below: step S121, uses thermal oxidation technology to insulate described first
Described oxide layer is formed on layer.
In this technical scheme, on the first insulating barrier, form oxide layer by thermal oxidation technology, promote
The reliability of insulating barrier, reduces the possibility that insulation layer fails causes the fault of Schottky diode
Property.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, also includes step in detail below: step 122, uses chemical vapor deposition method described the
Described oxide layer is formed on one insulating barrier.
In this technical scheme, on the first insulating barrier, form oxidation by chemical vapor deposition method
Layer, while ensureing the reliability of insulating barrier, the most additionally improves process costs, is more suitable for Schottky
The batch production of diode.
In technique scheme, it is preferable that formed on described first insulating barrier organic oxide layer and
/ or inorganic oxide layer, using described organic oxidation layer and/or described inorganic oxide layer as described second exhausted
Edge layer, also includes step in detail below: step S123, uses low pressure tetrasilicic acid ethyl ester depositing technics
Described first insulating barrier is formed described tetrasilicic acid methacrylate layer.
In this technical scheme, prepare tetrasilicic acid methacrylate layer by low pressure tetrasilicic acid ethyl ester depositing technics,
Ensure that the compactness of insulating barrier, simultaneously, it is ensured that the homogeneity of insulating barrier is good, and stress is little.
In technique scheme, it is preferable that in described first contact hole and described second contact hole shape
Become metal electrode, to complete the making of described Schottky diode, including step in detail below: step
S41, uses a kind of technique in metal sputtering processes, evaporation process and electroplating technology or kinds of processes
Combination in any, described first contact hole is formed the cathode electrode of described cathode zone.
In this technical scheme, by forming metal electrode at the first contact hole and the second contact hole, really
Protect the hardware foundation that Schottky diode is integrated in application-level circuitry.
In technique scheme, it is preferable that remove above the anode region of described gallium nitride layer corresponding
Composite insulation layer, to form the second contact hole of anode region exposing described gallium nitride layer, also
Including step in detail below: step S31, after forming described cathode electrode, use etching technics pair
Described second insulating barrier is patterned process, to form the second insulating barrier mask；Step S32,
After forming described second insulating barrier mask, described first insulating barrier is carried out at photoetching treatment and etching
Reason, to form described second contact hole, wherein, the cross-sectional area of described second insulating barrier mask is less than
Through the cross-sectional area of the first insulating barrier of over etching, by the first insulating barrier of over etching and not by institute
State the region of the second insulating barrier mask covering as supplemantary electrode region.
In this technical scheme, by forming supplemantary electrode region, improve the pass of Schottky diode
Disconnected control ability, improves the device reliability of Schottky diode, and the most additional process does not becomes
This, be conducive to the Schottky diode of low reverse leakage, low conducting voltage is carried out popularization and application.
In technique scheme, it is preferable that in described first contact hole and described second contact hole shape
Become metal electrode, to complete the making of described Schottky diode, also include step in detail below: adopt
With a kind of technique in metal sputtering processes, evaporation process and electroplating technology or any group of kinds of processes
Close, described second contact hole is formed the cathode zone electrode of described cathode zone, wherein, described
Cathode zone electrode, the electrode nitrogen gallium aluminium lamination corresponding with described cathode zone in described supplemantary electrode region
Together constitute the anode electrode of described Schottky diode.
In this technical scheme, by forming cathode electrode and anode electrode, define Schottky two pole
The hardware foundation of pipe, it is ensured that Schottky diode realizes its switch control functions.
Below in conjunction with Fig. 3 to Fig. 7, the course of processing of the Schottky diode according to the present invention is had
Body illustrates, wherein, in Fig. 3 to Fig. 7, the structure name of reference and correspondence is referred to as: 101 substrates,
102 gallium nitride, 103 nitrogen gallium aluminium laminations, 104 first insulating barriers, 105 second insulating barriers, 106 negative electrodes
Electrode, 107 anode electrodes.
As it is shown on figure 3, after forming gallium nitride layer 102 in substrate 101, on gallium nitride layer 102
Sequentially form nitrogen gallium aluminium lamination 103.
As shown in Figure 4, nitrogen gallium aluminium lamination 103 forms composite insulation layer (the first insulating barrier 104 He
Second insulating barrier 105).
As shown in Figure 5 and Figure 6, the compound inslation that the cathode zone of etching Schottky diode is corresponding
Layer, to form the first contact hole, and forms cathode electrode in the first contact hole.
As it is shown in fig. 7, the composite insulation layer that the anode region of etching Schottky diode is corresponding, with shape
Become the second contact hole, and in the second contact hole, form metal electrode 107 and supplemantary electrode, Ye Jitai
Stage structure 108, wherein, metal electrode 107, supplemantary electrode 108 and the common structure of nitrogen gallium aluminium lamination 103
Become the anode of Schottky diode.
Technical scheme being described in detail above in association with accompanying drawing, the present invention proposes a kind of Xiao Te
The processing method of based diode and a kind of Schottky diode, the device that improve Schottky diode can
By property, the most not additional process cost, be conducive to low reverse leakage, Xiao of low conducting voltage
Special based diode carries out popularization and application.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for
For those skilled in the art, the present invention can have various modifications and variations.All essences in the present invention
Within god and principle, any modification, equivalent substitution and improvement etc. made, should be included in the present invention
Protection domain within.
Claims (10)
1. the processing method of a Schottky diode, it is characterised in that including:
Nitrogen gallium aluminium lamination and composite insulation layer, institute is sequentially formed in the front of the substrate being formed with gallium nitride layer
State composite insulation layer and include the first insulating barrier and second insulating barrier of stacking；
Remove composite insulation layer corresponding above the cathode zone of described gallium nitride layer, expose to be formed
First contact hole of the cathode zone of described gallium nitride layer；
Remove composite insulation layer corresponding above the anode region of described gallium nitride layer, expose to be formed
Second contact hole of the anode region of described gallium nitride layer, wherein, described first insulating barrier corresponding
The aperture of the second contact hole that the aperture of two contact holes is corresponding more than described second insulating barrier；
Metal electrode is formed, to complete described Xiao Te at described first contact hole and described second contact hole
The making of based diode.
The processing method of Schottky diode the most according to claim 1, it is characterised in that
Sequentially form nitrogen gallium aluminium lamination and composite insulation layer in the front of the substrate being formed with gallium nitride layer, including with
Lower concrete steps:
After the front of described semiconductor base sequentially forms described gallium nitride layer and described nitrogen gallium aluminium lamination,
Chemical vapor deposition method is used to form described first insulating barrier above described nitrogen gallium aluminium lamination, wherein,
Described first insulating barrier is silicon nitride layer.
The processing method of Schottky diode the most according to claim 2, it is characterised in that
Sequentially form nitrogen gallium aluminium lamination and composite insulation layer in the front of the substrate being formed with gallium nitride layer, also include
Step in detail below:
Described first insulating barrier forms organic oxide layer and/or inorganic oxide layer, with described organic
Oxide layer and/or described inorganic oxide layer are as described second insulating barrier, wherein, described inorganic oxide
Layer includes that silicon oxide layer, described organic oxidation layer include tetraethyl orthosilicate layer.
The processing method of Schottky diode the most according to claim 3, it is characterised in that
Described first insulating barrier forms organic oxide layer and/or inorganic oxide layer, with described organic oxidation
Layer and/or described inorganic oxide layer are as described second insulating barrier, including step in detail below:
Thermal oxidation technology is used to form described oxide layer on described first insulating barrier.
The processing method of Schottky diode the most according to claim 3, it is characterised in that
Described first insulating barrier forms organic oxide layer and/or inorganic oxide layer, with described organic oxidation
Layer and/or described inorganic oxide layer, as described second insulating barrier, also include step in detail below:
Chemical vapor deposition method is used to form described oxide layer on described first insulating barrier.
The processing method of Schottky diode the most according to claim 3, it is characterised in that
Described first insulating barrier forms organic oxide layer and/or inorganic oxide layer, with described organic oxidation
Layer and/or described inorganic oxide layer, as described second insulating barrier, also include step in detail below:
Low pressure tetrasilicic acid ethyl ester depositing technics is used to form described tetrasilicic acid second on described first insulating barrier
Ester layer.
7. according to the processing method of the Schottky diode according to any one of claim 3 to 6,
It is characterized in that, form metal electrode, to complete at described first contact hole and described second contact hole
The making of described Schottky diode, including step in detail below:
Use a kind of technique in metal sputtering processes, evaporation process and electroplating technology or kinds of processes
Combination in any, forms the cathode electrode of described cathode zone in described first contact hole.
The processing method of Schottky diode the most according to claim 4, it is characterised in that
Remove composite insulation layer corresponding above the anode region of described gallium nitride layer, expose with formation described
Second contact hole of the anode region of gallium nitride layer, also includes step in detail below:
After forming described cathode electrode, use etching technics that described second insulating barrier is patterned
Process, to form the second insulating barrier mask；
After forming described second insulating barrier mask, described first insulating barrier is carried out photoetching treatment and quarter
Erosion processes, to form described second contact hole,
Wherein, the cross-sectional area of described second insulating barrier mask is less than the first insulating barrier through over etching
Cross-sectional area, by and do not covered by described second insulating barrier mask in the first insulating barrier of over etching
Region is as supplemantary electrode region.
The processing method of Schottky diode the most according to claim 5, it is characterised in that
Metal electrode is formed, to complete described Schottky two at described first contact hole and described second contact hole
The making of pole pipe, also includes step in detail below:
Use a kind of technique in metal sputtering processes, evaporation process and electroplating technology or kinds of processes
Combination in any, forms the cathode zone electrode of described cathode zone in described second contact hole,
Wherein, described cathode zone electrode, the electrode in described supplemantary electrode region and described cathode zone
Corresponding nitrogen gallium aluminium lamination together constitutes the anode electrode of described Schottky diode.
10. a Schottky diode, it is characterised in that use as appointed in claims 1 to 9
The processing method of one described Schottky diode is made.
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| CN108336129A (en) * | 2018-01-12 | 2018-07-27 | 中国科学院微电子研究所 | Super junction Schottky diode and manufacturing method thereof |
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