CN106300922A - A kind of high temperature driven protection device - Google Patents
A kind of high temperature driven protection device Download PDFInfo
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- CN106300922A CN106300922A CN201510303056.9A CN201510303056A CN106300922A CN 106300922 A CN106300922 A CN 106300922A CN 201510303056 A CN201510303056 A CN 201510303056A CN 106300922 A CN106300922 A CN 106300922A
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- module
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- power device
- refrigeration module
- drives
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Abstract
The invention provides a kind of high temperature driven protection device, drive module and refrigeration module including power device;Refrigeration module has two pieces, is separately positioned on power device and drives on the two sides of module;Power device drives module, for driving and guaranteed output proper device operation;Refrigeration module, for driving module heat dissipating to power device.Compared with prior art; a kind of high temperature driven protection device that the present invention provides; use the method design that semiconductor refrigerating technology and silicon-based semiconductor integrated circuit technique combine; can the normal work in high temperature environments of effective guarantee silicon-based semiconductor integrated circuit, make high-temperature carborundum power field effect pipe constant power device obtain good driving and protection.
Description
Technical field
The present invention relates to power electronics protection field, be specifically related to a kind of high temperature driven protection device.
Background technology
The excellent properties that sic semiconductor device has that switching speed is high, turns off pressure height, temperature tolerance is high, extremely suitable height
Applied power electronics under temperature environment.Along with the fast development of manufacturing process, device high pressure tolerance, switching speed have obtained
Having arrived rapid lifting, higher device temperature ability to work starts to become the focus of research, it is believed that high-temperature device also will occur rapidly.
In existing silicon carbide device, it is suitable for the application under hot environment the most with field effect transistor, in order to make full use of silicon carbide power
The hot operation potentiality of field effect transistor, it is desirable to be able to be equally used for the Drive Protecting Circuit cooperating of hot environment.But, by
The most ripe in silicon carbide integrated circuit technology, market today there is no silicon carbide integrated circuit product, still need to use the integrated electricity of silicon
Road builds Drive Protecting Circuit.But, cannot be applied in hot environment owing to the characteristic of semiconductor of silicon determines silicon integrated circuit,
On current market, Drive Protecting Circuit based on silicon integrated circuit is only 85 degrees Celsius, it is impossible in the environment temperature higher than 85 degrees Celsius
The lower silicon carbide power field effect transistor driving working junction temperature to may be up to 250 degrees Celsius of degree.It is thus desirable to it is existing to provide one to use
The high-temperature carborundum power field effect pipe having silicon device drives protection device, makes high-temperature carborundum power field effect be in control good
Drive and protection.
Summary of the invention
In order to meet the needs of prior art, the invention provides a kind of high temperature driven protection device.
The technical scheme is that
Described device includes that power device drives module and refrigeration module;Described refrigeration module has two pieces, is separately positioned on power device
Part drives on the two sides of module;
Described power device drives module, for driving and guaranteed output proper device operation;
Described refrigeration module, for driving module heat dissipating to power device.
Preferably, described refrigeration module and described power device drive the contact side of module, and in refrigeration module with this contact side
Being provided with metal shell on corresponding side, described metal shell is used for heat conduction;
Preferably, the side of described device is provided with high-temperature heat insulation silica gel, for sealing device;
Preferably, described power device drives module to be fixed between two locating grooves;
Preferably, described refrigeration module is high temperature semiconductors refrigeration module;
Preferably, described power device drives module to be silica-based integration module;
Preferably, described power device drives module, including input port, output port, and the signal condition being sequentially connected with
Circuit, signal isolation circuit and drive circuit;
Described signal conditioning circuit is connected with input port, and a branch road of drive circuit is connected with output port, another branch road
It is connected with output port by protection circuit, between described protection circuit and output port, is also associated with testing circuit;
Described testing circuit gathers the current signal of power device, and described current signal is sent to protection circuit;
Described protection circuit, it is judged that whether described current signal exceedes the output-current rating of power device, if exceeding, to driving
Circuit transmit power device block signal, prevents power device generation overcurrent damage;
Preferably, described power device drives module, also includes temperature observation circuit, the refrigeration module control circuit being sequentially connected with
With DCDC Switching Power Supply, described DCDC Switching Power Supply is connected with input port;
Described temperature observation circuit, drives the temperature value of inside modules, and is sent to by described temperature value for gathering power device
Refrigeration module control circuit;
Described refrigeration module control circuit, relatively described temperature value and temperature threshold, adjust DCDC according to the temperature difference of the two and open
Close the voltage output value of power supply;
Described DCDC Switching Power Supply, the voltage signal output it is sent to refrigeration module, and refrigeration module is believed according to described voltage
Number realizing heat inversely transmits, and power device drives the heat of module be delivered in the external environment condition of described device;
Preferably, described power device drives module, also includes the DCDC insulating power supply being connected with input port, described DCDC
Insulating power supply is powered to drive circuit, protection circuit, testing circuit and DCDC Switching Power Supply.
Compared with immediate prior art, the excellent effect of the present invention is:
A kind of high temperature driven protection device that the present invention provides, makes full use of the feature of semiconductor refrigerating technology, in hot environment
Carry out reverse heat transfer, promote entirety and drive the radiating efficiency of protection device, simplify apparatus structure, reduce device volume,
Drive module to combine with power device semiconductor refrigerating module, be extremely applicable to silicon carbide power field effect transistor under hot environment
Drive the application of protection device;
A kind of high temperature driven protection device that the present invention provides, makes full use of power device and drives the feature of module, by quasiconductor system
The control circuit part of chill block and power device drive module to be integrated on same circuit board, and monitoring power device drives mould in real time
The operating ambient temperature of block, and the temperature of this working environment is adjusted by controlling semiconductor refrigerating module, it is extremely applicable to high temperature ring
Under border, silicon carbide power field effect transistor drives the inner shell ambient temperature of protection device to control.
Accompanying drawing explanation
The present invention is further described below in conjunction with the accompanying drawings.
Fig. 1: a kind of high temperature driven protection device schematic diagram in the embodiment of the present invention;
Fig. 2: a kind of high temperature driven protection device front view in the embodiment of the present invention;
Fig. 3: a kind of high temperature driven protection device top view in the embodiment of the present invention;
Fig. 4: a kind of high temperature driven protection device side view in the embodiment of the present invention;
Fig. 5: in the embodiment of the present invention, power device drives module circuit diagram;
Wherein, 1: metal shell;2: locating groove;3: metal shell;4: input port;5: output port;6: electricity
Source supply lines.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most identical or
Similar label represents same or similar element or has the element of same or like function.Describe below with reference to accompanying drawing
Embodiment is exemplary, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
A kind of high temperature driven protection device that the present invention provides, uses semiconductor refrigerating technology and silicon-based semiconductor integrated circuit technique
The method design combined, it is possible to effective guarantee silicon-based semiconductor integrated circuit normal work in high temperature environments, makes pyrocarbon
SiClx power field effect pipe constant power device obtains good driving and protection.
One, in the present embodiment, the concrete structure of high temperature driven protection device is:
As it is shown in figure 1, this device includes that power device drives module and refrigeration module.
Wherein, refrigeration module has two pieces, is separately positioned on power device and drives on the two sides of module, refrigeration module and power device
Part drives the contact side of module, and is provided with outside the metal of heat conduction on side corresponding with this contact side in refrigeration module
Shell, metal shell 1 as shown in Figure 1 and metal shell 3.
Such as Fig. 2, shown in 3 and 4, the side of described device is provided with high-temperature heat insulation silica gel, for sealing device.
Power device drives module, is fixed between two locating grooves 2, for driving and guaranteed output proper device operation;
Refrigeration module, for driving module heat dissipating to power device.
1, power drive device module
As it is shown in figure 5, power drive device module includes that input port 4, output port 5, signal conditioning circuit, signal are isolated
Circuit, drive circuit, temperature observation circuit, refrigeration module control circuit, DCDC Switching Power Supply and DCDC insulating power supply.
Concrete annexation is:
(1) signal conditioning circuit, signal isolation circuit and drive circuit are sequentially connected with, wherein:
Signal conditioning circuit is connected with input port 4;
One branch road of drive circuit is connected with output port 5, and another branch road is connected with output port 5 by protection circuit,
It is also associated with testing circuit between protection circuit and output port 5.
Testing circuit gathers the current signal of power device, and current signal is sent to protection circuit;Protection circuit, it is judged that electric current
Whether signal exceedes the output-current rating of power device, if exceeding, to drive circuit transmit power device block signal, prevents
Power device generation overcurrent damage.
(2) temperature observation circuit, refrigeration module control circuit and DCDC Switching Power Supply are sequentially connected with, wherein:
DCDC Switching Power Supply is connected with input port, and DCDC insulating power supply is connected with input port.
Temperature observation circuit, drives the temperature value of inside modules, and temperature value is sent to refrigeration module for gathering power device
Control circuit;In the present embodiment, temperature observation circuit includes temperature sensor, gathers metal shell 1 and metal shell 3 forms shell
The internal temperature of body.
Refrigeration module control circuit, C.T value and temperature threshold, adjust DCDC Switching Power Supply according to the temperature difference of the two
Voltage output value;Temperature threshold in the present embodiment refers to guaranteed output device drive module and normally works the maximum that can bear
Temperature value.
DCDC Switching Power Supply, the voltage signal output it is sent to refrigeration module, and refrigeration module realizes heat according to voltage signal
The reverse transmission of amount, drives the heat of module to be delivered in the external environment condition of device by power device.
DCDC insulating power supply is powered to drive circuit, protection circuit, testing circuit and DCDC Switching Power Supply.
In the present embodiment, power device drives module to be silica-based integration module.
2, refrigeration module
In the present embodiment, refrigeration module is high temperature semiconductors refrigeration module, and high temperature semiconductors refrigeration module makes full use of quasiconductor system
Can inversely the conducting heat of refrigeration technique, reliability is high, control easy, the feature of simple in construction, for cannot hot operation silica-based integrated
The i.e. power device of circuit drives module to provide suitable operating temperature, makes silicon carbide power based on traditional silicon base integrated circuit technique
The Drive Protecting Circuit of field effect transistor constant power device together can work with carborundum constant power device in high temperature.
As it is shown in figure 1, the contact side of metal shell 1 and refrigeration module is its hot junction, connecing of metal shell 3 and refrigeration module
Tactile side is its cold end, and when the temperature of metal shell 1 is higher than the temperature of hot environment, metal shell 1 passes to hot environment forward
Pass heat, therefore rely on the reverse heat transfer principle of refrigeration module, still can ensure that power drive device module is far below high temperature
The desired operating temperatures changed normally works.Refrigeration module absorbs heat from low temperature side, discharges heat to high temperature side, effectively alleviates
The burden of other refrigeration systems, improve refrigerating efficiency, it is to avoid conventional liquid chiller system is run in hot environment, with
Time absorb heat again by the process of liquid-circulating heat radiation from low temperature side and hot environment.
Setting the temperature of hot environment in the present embodiment as 125~175 DEG C, the temperature that power drive device module normally works is
25~85 DEG C.
Finally should be noted that: described embodiment is only some embodiments of the present application rather than whole embodiments.
Based on the embodiment in the application, those of ordinary skill in the art obtained under not making creative work premise all its
His embodiment, broadly falls into the scope of the application protection.
Claims (9)
1. a high temperature driven protection device, it is characterised in that described device includes that power device drives module and refrigeration module;
Described refrigeration module has two pieces, is separately positioned on power device and drives on the two sides of module;
Described power device drives module, for driving and guaranteed output proper device operation;
Described refrigeration module, for driving module heat dissipating to power device.
2. device as claimed in claim 1, it is characterised in that described refrigeration module drives connecing of module with described power device
Touching and be provided with metal shell on side corresponding with this contact side in side, and refrigeration module, described metal shell is used for heat conduction.
3. device as claimed in claim 1, it is characterised in that the side of described device is provided with high-temperature heat insulation silica gel, uses
In device is sealed.
4. device as claimed in claim 1, it is characterised in that described power device drives module to be fixed on two locating grooves
Between.
5. device as claimed in claim 1, it is characterised in that described refrigeration module is high temperature semiconductors refrigeration module.
6. device as claimed in claim 1, it is characterised in that described power device drives module to be silica-based integration module.
7. device as claimed in claim 1, it is characterised in that described power device drives module, including input port, defeated
Go out port, and signal conditioning circuit, signal isolation circuit and the drive circuit being sequentially connected with;
Signal conditioning circuit is connected with described input port, and a branch road of drive circuit is connected with described output port, another
Branch road is connected with output port by protection circuit, is also associated with testing circuit between described protection circuit and output port;
Described testing circuit gathers the current signal of power device, and described current signal is sent to protection circuit;
Described protection circuit, it is judged that whether described current signal exceedes the output-current rating of power device, if exceeding, to driving
Circuit transmit power device block signal, prevents power device generation overcurrent damage.
8. device as claimed in claim 7, it is characterised in that described power device drives module, also includes being sequentially connected with
Temperature observation circuit, refrigeration module control circuit and DCDC Switching Power Supply, described DCDC Switching Power Supply is connected with input port;
Described temperature observation circuit, drives the temperature value of inside modules, and is sent to by described temperature value for gathering power device
Refrigeration module control circuit;
Described refrigeration module control circuit, relatively described temperature value and temperature threshold, adjust DCDC according to the temperature difference of the two and open
Close the voltage output value of power supply;
Described DCDC Switching Power Supply, the voltage signal output it is sent to refrigeration module, and refrigeration module is believed according to described voltage
Number realizing heat inversely transmits, and power device drives the heat of module be delivered in the external environment condition of described device.
9. device as claimed in claim 7 or 8, it is characterised in that described power device drives module, also includes and input
The DCDC insulating power supply that port connects, described DCDC insulating power supply is to drive circuit, protection circuit, testing circuit and DCDC
Switching Power Supply is powered.
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CN201510303056.9A CN106300922B (en) | 2015-06-04 | 2015-06-04 | A kind of high temperature driven protective device |
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CN201510303056.9A CN106300922B (en) | 2015-06-04 | 2015-06-04 | A kind of high temperature driven protective device |
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CN106300922A true CN106300922A (en) | 2017-01-04 |
CN106300922B CN106300922B (en) | 2019-08-06 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112540634A (en) * | 2019-09-20 | 2021-03-23 | 触景无限科技(北京)有限公司 | Heating system for low-temperature heating of electronic equipment and electronic equipment thereof |
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CN102931818A (en) * | 2012-10-24 | 2013-02-13 | 广东美的暖通设备有限公司 | Frequency conversion module heat abstractor and air conditioner |
CN104180576A (en) * | 2014-09-03 | 2014-12-03 | 四川航天系统工程研究所 | Low-temperature semiconductor refrigerator and method for providing linear voltage for chilling plates of refrigerator |
CN104656696A (en) * | 2013-11-18 | 2015-05-27 | 西安丁子电子信息科技有限公司 | High temperature environment-resisting circuit board system |
CN104682676A (en) * | 2013-11-28 | 2015-06-03 | 北车大连电力牵引研发中心有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
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2015
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010283932A (en) * | 2009-06-02 | 2010-12-16 | Honda Motor Co Ltd | Controller for load-driving system |
CN102931818A (en) * | 2012-10-24 | 2013-02-13 | 广东美的暖通设备有限公司 | Frequency conversion module heat abstractor and air conditioner |
CN104656696A (en) * | 2013-11-18 | 2015-05-27 | 西安丁子电子信息科技有限公司 | High temperature environment-resisting circuit board system |
CN104682676A (en) * | 2013-11-28 | 2015-06-03 | 北车大连电力牵引研发中心有限公司 | IGBT (Insulated Gate Bipolar Translator) driving protection circuit |
CN104180576A (en) * | 2014-09-03 | 2014-12-03 | 四川航天系统工程研究所 | Low-temperature semiconductor refrigerator and method for providing linear voltage for chilling plates of refrigerator |
Cited By (1)
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CN112540634A (en) * | 2019-09-20 | 2021-03-23 | 触景无限科技(北京)有限公司 | Heating system for low-temperature heating of electronic equipment and electronic equipment thereof |
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