CN106299153A - A kind of film encapsulation method and structure thereof - Google Patents
A kind of film encapsulation method and structure thereof Download PDFInfo
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- CN106299153A CN106299153A CN201610881373.3A CN201610881373A CN106299153A CN 106299153 A CN106299153 A CN 106299153A CN 201610881373 A CN201610881373 A CN 201610881373A CN 106299153 A CN106299153 A CN 106299153A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Abstract
The application relates to Display Technique field, specifically, relating to a kind of film encapsulation method and structure thereof.The film encapsulation method of the application at least comprises the following steps: device surface to be packaged is sequentially prepared the first inorganic material layer, organic material layer and the second inorganic material layer, when preparing the first inorganic material layer and/or the second inorganic material layer, first use physical vaporous deposition or chemical vapour deposition technique to prepare inorganic layer A, then use atomic layer deposition method to prepare inorganic layer B on the surface of inorganic layer A；Or, first use atomic layer deposition method to prepare inorganic layer B, then use physical vaporous deposition or chemical vapour deposition technique to prepare inorganic layer A on the surface of inorganic layer B.Present invention take advantage of that physical vaporous deposition or chemical vapour deposition technique and atomic layer deposition method prepare the consistency gradual change of composite inorganic layer, the thermal coefficient of expansion deviation making inorganic layer and the organic material layer prepared reduces, and improves the resistance to bending performance of display screen.
Description
Technical field
The application relates to Display Technique field, specifically, relating to a kind of film encapsulation method and structure thereof.
Background technology
Electronic device especially organic electronic device is especially sensitive to the steam in air and oxygen, it is therefore desirable to organic
Device is packaged ensureing the performance and used life of device.The main method of flexible organic electric device encapsulation at present, is straight
It is connected on device surface and makes the fexible film structure stopping that water oxygen permeability is excellent.Owing to flexible polymeric film stops water oxygen
Penetrating power is very limited, then shows when water oxygen ability is higher but reaches certain thickness though fine and close inoranic membrane free of pinholes stops
For rigid structure and easily fragmentation, thus the most most of flexible package research at present is all based on organic/inorganic multilamellar
The encapsulation technology of film alternately composite construction is carried out.Wherein, the main film build method of inorganic layer has: physical vaporous deposition
(PVD), chemical vapour deposition technique (CVD), atomic layer deposition method (ALD).ALD film layer water oxygen barriering effect is optimal, but due to ALD
Film layer compactness and stress ratio are relatively big, differ bigger with organic layer thermal coefficient of expansion, and it is easy to be directly prepared on organic layer
Film layer is caused to ftracture.
In consideration of it, special, the application is proposed.
Summary of the invention
The primary goal of the invention of the application is to propose a kind of film encapsulation method.
Second goal of the invention of the application is to propose the structure of a kind of thin-film package.
In order to complete the purpose of the application, the technical scheme of employing is:
The application relates to a kind of film encapsulation method, at least comprises the following steps:
Device surface to be packaged is sequentially prepared the first inorganic material layer, organic material layer and the second inorganic material layer,
When preparing described first inorganic material layer and/or the second inorganic material layer, physical vaporous deposition or chemical gaseous phase is first used to sink
Area method prepares inorganic layer A, then uses atomic layer deposition method to prepare inorganic layer B on the surface of described inorganic layer A；Or, first use
Atomic layer deposition method prepares inorganic layer B, then uses physical vaporous deposition or chemical vapour deposition technique described inorganic layer B's
Inorganic layer A is prepared on surface.
Preferably, described inorganic layer A is identical with the material of described inorganic layer B.
Preferably, when preparing described first inorganic material layer, when described device surface to be packaged is metallic aluminum, directly
Atomic layer deposition method is used to prepare inorganic layer B at described metallic aluminum1。
Preferably, when preparing described first inorganic material layer and/or the second inorganic material layer, physical vapor is first used to sink
Area method or chemical vapour deposition technique prepare inorganic layer A at described device surface to be packaged, then use atomic layer deposition method in institute
Inorganic layer B is prepared, finally on the surface of described inorganic layer B by physical vaporous deposition or chemistry gas in the surface stating inorganic layer A
Phase sedimentation prepares inorganic layer C.
Preferably, described inorganic layer A, described inorganic layer B are identical with the material of described inorganic layer C.
Preferably, the material of described inorganic material layer is selected from aluminium oxide, silicon oxide, silicon nitride or silicon oxynitride.
Preferably, the thickness of the inorganic layer that described physical vaporous deposition prepares is 50～200nm, described chemistry gas
The thickness of the inorganic layer that phase sedimentation prepares is 100nm～1 μm, the inorganic layer that described atomic layer deposition method prepares
Thickness is 30～70nm.
Preferably, described organic material layer uses the method for coating, inkjet printing or evaporation to prepare, described organic material layer
Material selected from acrylate, epoxy resin, Parylene, organosilicon.
Preferably, described device to be packaged is Organic Light Emitting Diode, and described Organic Light Emitting Diode is luminous organic for top
Light emitting diode and/or end luminescence Organic Light Emitting Diode.
The application relates to a kind of thin-film packing structure, and described thin-film packing structure is arranged at the surface of packaging, described
Packaging surface is disposed with the first inorganic material layer, organic material layer and the second inorganic material layer, described first inorganic
Material layer and/or the second inorganic material layer include the inorganic layer B using atomic layer deposition method to prepare；Described inorganic layer B is extremely
Physical vaporous deposition it is provided with or inorganic layer A prepared by chemical vapour deposition technique on a few surface.
The technical scheme of the application at least has a following beneficial effect:
The inorganic layer using ald to obtain is the finest and close, so the coefficient of expansion is minimum；The inorganic layer of vapour deposition process
Consistency is relatively low, and the coefficient of expansion is relatively low；And the organic layer coefficient of expansion is higher.Present invention take advantage of that physical vaporous deposition or change
Vapour deposition process and atomic layer deposition method prepare the consistency gradual change of composite inorganic layer, make atomic layer deposition method be prepared into
The inorganic layer arrived reduces with the thermal coefficient of expansion deviation of organic material layer, improves the resistance to bending performance of display screen.
Simultaneously as physical vaporous deposition or chemical vapour deposition technique prepare composite inorganic with atomic layer deposition method
Layer coordinates with organic layer, substantially increases the sealing effectiveness of packaging film.
In the preferred technical scheme of the application, atomic layer deposition method inorganic layer uses phase with the inorganic layer of vapour deposition process
Same material, when using identical material, the conjugation of two inorganic layers is more preferable, thus forms more firm connection, can enter
One step improves the resistance to bending performance of display screen.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the thin-film packing structure of a certain detailed description of the invention in the application；
Fig. 2 is the schematic diagram of the thin-film packing structure of still another embodiment in the application；
Fig. 3 is the schematic diagram of the thin-film packing structure of still another embodiment in the application；
Fig. 4 is the schematic diagram of the thin-film packing structure of still another embodiment in the application；
Fig. 5 is the schematic diagram of the thin-film packing structure of still another embodiment in the application；
Wherein, 1-the first inorganic material layer；
A1-inorganic layer A1；
B1-inorganic layer B1；
C1-inorganic layer C1；
2-organic material layer；
3-the second inorganic material layer；
A2-inorganic layer A2；
B2-inorganic layer B2；
C2-inorganic layer C2；
4-OLED；
5-substrate.
Detailed description of the invention
Below in conjunction with specific embodiment, the application is expanded on further.Should be understood that these embodiments are merely to illustrate the application
Rather than restriction scope of the present application.
The application relates to a kind of film encapsulation method, at least comprises the following steps:
Device surface to be packaged is sequentially prepared the first inorganic material layer 1, organic material layer 2 and the second inorganic material layer 3,
When preparing the first inorganic material layer and/or the second inorganic material layer, first use physical vaporous deposition or chemical gaseous phase deposition
Method prepares inorganic layer A, then uses atomic layer deposition method to prepare inorganic layer B on the surface of inorganic layer A；Or, first use atomic layer
Sedimentation prepares inorganic layer B, then uses physical vaporous deposition or chemical vapour deposition technique to prepare nothing on the surface of inorganic layer B
Machine layer A.
Wherein, inorganic layer A and inorganic layer B can use identical material or different materials.By first using vapour deposition process
Prepare the inorganic layer A that consistency is relatively low, use atom deposition method to prepare the inorganic layer B that consistency is higher the most again,
Thus define organic layer and be gradually increased to the consistency between inorganic layer, reduce organic material layer 2 and the second inorganic material
Coefficient of expansion difference between layer 3, thus improve the resistance to bending performance of display screen.
In the preferred technical scheme of the application, inorganic layer A is identical with the material of inorganic layer B, forms the second compound nothing
Machine material layer 3, and use identical material to overlap, its conjugation is good, thus forms more firm connection, further
Improve the resistance to bending performance of display screen.
The thin-film package of the application is mainly used in Organic Light Emitting Diode (OLED), and device the most to be packaged is OLED, bag
Include top-illuminating OLED and end illuminating OLED.
As a kind of improvement of the application film encapsulation method, when preparing the first inorganic material layer 1, when device to be packaged
When surface is metallic aluminum, atomic layer deposition method is directly used to prepare inorganic layer B on the surface of metallic aluminum1.That is, when organic
When optical diode is end illuminating OLED, atomic layer deposition method is used directly to prepare inorganic layer at cathode surface.
Preferably, directly when cathode surface prepares inorganic layer, the inorganic material used is aluminium oxide, because aluminium oxide
Directly contacting with negative electrode Al, thermal coefficient of expansion deviation is smaller, so that thin-film package is more firm with the combination of OLED, improves
The resistance to bending performance of display screen.
As a kind of improvement of the application film encapsulation method, preparing described first inorganic material layer and/or the second nothing
During machine material layer, physical vaporous deposition or chemical vapour deposition technique is first used to prepare inorganic layer at described device surface to be packaged
A, then uses atomic layer deposition method to prepare inorganic layer B on the surface of described inorganic layer A, finally on the surface of described inorganic layer B
Prepare inorganic layer C by physical vaporous deposition or chemical vapour deposition technique, thus reduce the first inorganic material layer 1 and organic material
Coefficient of expansion difference between the bed of material 2.
As a kind of improvement of the application film encapsulation method, inorganic layer A, inorganic layer B are identical with the material of inorganic layer C,
Form the first compound inorganic material layer, make the conjugation between each inorganic layer more preferable, thus more firm connection can be formed.
As a kind of improvement of the application film encapsulation method, inorganic material is selected from aluminium oxide Al Ox(0 < x < 1.5), oxidation
Silicon SiOx(0 < x < 2), silicon nitride SiNx(0 < x < 1.5), silicon oxynitride SiOxNy。
As a kind of improvement of the application film encapsulation method, the thickness of the inorganic layer that physical vaporous deposition prepares
Being 50～200nm, the thickness of the inorganic layer that chemical vapour deposition technique prepares is 100nm～1 μm, prepared by atomic layer deposition method
The thickness of the inorganic layer obtained is 30～70nm.
As a kind of improvement of the application film encapsulation method, organic material layer uses coating, inkjet printing or evaporation
Prepared by method, organic material layer is selected from acrylate, epoxy resin, Parylene, organosilicon etc.；The thickness of organic material layer
It is 1～10 μm.
As a kind of improvement of the application film encapsulation method, device to be packaged is Organic Light Emitting Diode, organic light emission
Diode is top Organic Light Emitting Diode and/or end Organic Light Emitting Diode.
In the application, inorganic layer, the preparation method of organic material layer all use existing method to be prepared.
The application further relates to a kind of thin-film packing structure, and thin-film packing structure is arranged at the surface of packaging, wrapper
Part surface is disposed with the first inorganic material layer, organic material layer and the second inorganic material layer, the first inorganic material layer and
Two inorganic material layers include being provided with at least one surface of the inorganic layer B, inorganic layer B that use atomic layer deposition method to prepare
Use inorganic layer A prepared by physical vaporous deposition or chemical vapour deposition technique.
As a kind of improvement of the application thin-film packing structure, use inorganic layer B that atom deposition method prepares and adopt
The material of the inorganic layer A prepared with physical vaporous deposition or chemical vapour deposition technique is identical.
In a certain detailed description of the invention of the application, this encapsulating structure is arranged on device to be packaged, is followed successively by employing
Inorganic layer B prepared by atomic layer deposition method1, organic material layer 2, use physical vaporous deposition or chemical vapour deposition technique to prepare
Inorganic layer A2, use the inorganic layer B for preparing of atomic layer deposition method2, totally 4 Rotating fields.This structure is preferably applied to work as organic light emission
When diode is end illuminating OLED, atomic layer deposition method is used directly to prepare inorganic layer at cathode surface.Its schematic diagram such as Fig. 1 institute
Show.
In a certain detailed description of the invention of the application, this encapsulating structure is arranged on device to be packaged, is followed successively by employing
Inorganic layer A prepared by physical vaporous deposition or chemical vapour deposition technique1, use the inorganic layer B for preparing of atomic layer deposition method1, have
Inorganic layer A prepared by machine material layer 2, employing physical vaporous deposition or chemical vapour deposition technique2, use ald legal system
Standby inorganic layer B2, totally 5 Rotating fields.Its schematic diagram is as shown in Figure 2.
In a certain detailed description of the invention of the application, this encapsulating structure is arranged on device to be packaged, is followed successively by employing
Inorganic layer B prepared by atomic layer deposition method1, use inorganic layer A prepared by physical vaporous deposition or chemical vapour deposition technique1, have
Inorganic layer A prepared by machine material layer 2, employing physical vaporous deposition or chemical vapour deposition technique2, use ald legal system
Standby inorganic layer B2, totally 5 Rotating fields.Its schematic diagram is as shown in Figure 3.
In a certain detailed description of the invention of the application, this encapsulating structure is arranged on device to be packaged, is followed successively by employing
Inorganic layer B prepared by atomic layer deposition method1, use inorganic layer A prepared by physical vaporous deposition or chemical vapour deposition technique1, have
Inorganic layer A prepared by machine material layer 2, employing physical vaporous deposition or chemical vapour deposition technique2, use ald legal system
Standby inorganic layer B2, use inorganic layer C prepared by physical vaporous deposition or chemical vapour deposition technique2, totally 6 Rotating fields.This structure
It is preferably applied to when Organic Light Emitting Diode is end illuminating OLED, uses atomic layer deposition method directly to prepare nothing at cathode surface
Machine layer.Its schematic diagram is as shown in Figure 4.
In a certain detailed description of the invention of the application, this encapsulating structure is arranged on device to be packaged, is followed successively by employing
Inorganic layer A prepared by physical vaporous deposition or chemical vapour deposition technique1, use the inorganic layer B for preparing of atomic layer deposition method1, adopt
The inorganic layer C prepared with physical vaporous deposition or chemical vapour deposition technique1, organic material layer 2, use physical vaporous deposition
Or inorganic layer A prepared by chemical vapour deposition technique2, use the inorganic layer B for preparing of atomic layer deposition method2, use physical vapour deposition (PVD)
Inorganic layer C prepared by method or chemical vapour deposition technique2, totally 7 Rotating fields.Its schematic diagram is as shown in Figure 5.
Embodiment 1
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 1；
Table 1:
Wherein, 0 < x < 1.5.
Preparation technology:
First, prepare top-illuminating OLED device and drive backboard, device to be packaged is placed in Pvd equipment,
Use aluminum target, carry out reactive sputter-deposition inorganic layer A1, deposit thickness 80nm；Ald it is sent to again after having deposited
In equipment, presoma is trimethyl aluminium TMA and H2O, presoma reaction forms inorganic layer B1, deposit thickness 50nm；Repeat physics gas
Phase deposition process, redeposited AlO thick for 80nmxAs inorganic layer C1, above, complete the encapsulation of the first inorganic layer.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method selecting evaporation, organic monomer is former
Material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Repeat the step of the first inorganic layer, complete the film forming of the second inorganic layer.
Embodiment 2
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 2；
Table 2:
Wherein, 0 < x < 2.
Preparation technology:
First, prepare top-illuminating OLED device and drive backboard, device to be packaged is placed in chemical vapor depsotition equipment,
Using silane and laughing gas is reacting gas, and reaction film forming forms inorganic layer A1, deposit thickness 100nm；Transmit again after having deposited
In atomic layer deposition apparatus, presoma is tetraethyl orthosilicate and oxygen, and reaction forms inorganic layer B1, deposit thickness 50nm；
Repeat chemical vapor deposition processes, redeposited SiO thick for 100nmxAs inorganic layer C1, above, complete the envelope of the first inorganic layer
Dress.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method using evaporation coating, organic list
Body raw material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Repeat the step of the first inorganic layer, complete the film forming of the second inorganic layer.
Embodiment 3
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 3；
Table 3:
Wherein, at SiOxIn 0 < x < 2, at AlOxIn 0 < x < 1.5.
Preparation technology:
First, prepare top-illuminating OLED device and drive backboard, device to be packaged is placed in chemical vapor depsotition equipment,
Silane and laughing gas reaction film forming, form inorganic layer A1, deposit thickness 130nm；It is sent to ald after having deposited again set
Standby interior, trimethyl aluminium and oxygen reaction form inorganic layer B1, deposit thickness 60nm；Again by processes of physical vapor deposition, then sink
Long-pending AlO thick for 80nmxAs inorganic layer C1, above, complete the encapsulation of the first inorganic layer.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method using evaporation coating, organic list
Body raw material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Physical vaporous deposition is used to prepare inorganic layer A2, thickness 100nm；Atomic layer deposition method is used to prepare inorganic layer B2,
The film forming completing the second inorganic layer made above.
Embodiment 4
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 4；
Table 4:
Wherein, 0 < x < 1.5.
Preparation technology:
First, preparation end emitting OLED-device and driving backboard, device to be packaged is placed in atomic layer deposition apparatus, three
Aluminium methyl and oxygen reaction form inorganic layer B1, deposit thickness 70nm；Again by processes of physical vapor deposition, redeposited 80nm is thick
AlOxAs inorganic layer A1, above, complete the encapsulation of the first inorganic layer.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method using evaporation coating, organic list
Body raw material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Physical vaporous deposition is used to prepare inorganic layer A2, thickness 100nm；Atomic layer deposition method is used to prepare inorganic layer B2,
Physical vaporous deposition is used to prepare inorganic layer C2, complete the film forming of the second inorganic layer.
Embodiment 5
A kind of thin-film packing structure, is upwards followed successively by metallic aluminum, the first inorganic material layer 1, You Jicai from OLED surface
The bed of material 2 and the second inorganic material layer 3, its concrete structure, material and thickness are as shown in table 5；
Table 5:
Wherein, 0 < x < 1.5.
Preparation technology:
First, preparation end emitting OLED-device and driving backboard, device to be packaged is placed in atomic layer deposition apparatus, three
Aluminium methyl and oxygen reaction form inorganic layer B1, deposit thickness 70nm；Complete the encapsulation of the first inorganic layer.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method using evaporation coating, organic list
Body raw material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Physical vaporous deposition is used to prepare inorganic layer A2, thickness 100nm；Atomic layer deposition method is used to prepare inorganic layer B2,
Complete the film forming of the second inorganic layer.
Embodiment 6
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 6；
Table 6:
Wherein, 0 < x < 1.5.
Preparation technology:
First, preparation end emitting OLED-device and driving backboard are by device to be packaged by processes of physical vapor deposition, heavy
Long-pending AlO thick for 80nmxAs inorganic layer A1；Being placed in atomic layer deposition apparatus, trimethyl aluminium and oxygen reaction form inorganic layer again
B1, deposit thickness 70nm；More than again, complete the encapsulation of the first inorganic layer.
After first inorganic layer has encapsulated, carry out the film forming of organic material layer.The method using evaporation coating, organic list
Body raw material heating evaporation, condenses film forming on substrate, then carries out UV and solidify to form thin-film package organic layer, deposit thickness 1 μm.
Physical vaporous deposition is used to prepare inorganic layer A2, thickness 100nm；Atomic layer deposition method is used to prepare inorganic layer B2,
Complete the film forming of the second inorganic layer.
Comparative example 1
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 7；
Table 7:
Wherein, 0 < x < 1.5.
Comparative example 2
A kind of thin-film packing structure, is upwards followed successively by the first inorganic material layer 1, organic material layer 2 and the from OLED surface
Two inorganic material layers 3, its concrete structure, material and thickness are as shown in table 8；
Table 8:
Wherein, 0 < x < 1.5.
Experimental example
The comparative example thin-film packing structure that the thin-film packing structure obtained by above-described embodiment 1～4 and comparative example obtain
Testing as follows, concrete outcome is shown in Table 9:
1, it is placed under hot and humid environment (60 DEG C, 90%) and stores 300 hours, observe the encapsulation effect of each thin-film packing structure
Really；
2, after each thin-film packing structure being bent 10000 times, bending resistance folding endurance result is observed.
Table 9:
| Hot and humid test result | Bending resistance folding endurance | |
| Embodiment 1 | Without black line, occur without stain | Without exception |
| Embodiment 2 | Without black line, occur without stain | Without exception |
| Embodiment 3 | Without black line, occur without stain | Without exception |
| Embodiment 4 | Without black line, occur without stain | Without exception |
| Embodiment 5 | Without black line, occur without stain | Without exception |
| Embodiment 6 | Without black line, occur without stain | Without exception |
| Comparative example 1 | More stain and black line it is distributed on panel | There is micro-crack in macroscopic view |
| Comparative example 2 | More stain and black line it is distributed on panel | There is micro-crack in macroscopic view |
Although the application is open as above with preferred embodiment, but is not for limiting claim, any this area skill
Art personnel, on the premise of conceiving without departing from the application, can make some possible variations and amendment, therefore the application
Protection domain should be defined in the range of standard with the application claim.
Claims (10)
1. a film encapsulation method, it is characterised in that at least comprise the following steps:
Device surface to be packaged is sequentially prepared the first inorganic material layer, organic material layer and the second inorganic material layer, in preparation
When described first inorganic material layer and/or described second inorganic material layer, physical vaporous deposition or chemical gaseous phase is first used to sink
Area method prepares inorganic layer A, then uses atomic layer deposition method to prepare inorganic layer B on the surface of described inorganic layer A；Or, first use
Atomic layer deposition method prepares inorganic layer B, then uses physical vaporous deposition or chemical vapour deposition technique described inorganic layer B's
Inorganic layer A is prepared on surface.
Film encapsulation method the most according to claim 1, it is characterised in that the material of described inorganic layer A and described inorganic layer B
Expect identical.
Film encapsulation method the most according to claim 1, it is characterised in that when preparing described first inorganic material layer,
When described device surface to be packaged is metallic aluminum, atomic layer deposition method is directly used to prepare inorganic layer at described metallic aluminum
B1。
Film encapsulation method the most according to claim 1, it is characterised in that prepare described first inorganic material layer and/
Or during the second inorganic material layer, first use physical vaporous deposition or chemical vapour deposition technique in described device surface system to be packaged
Standby inorganic layer A, then uses atomic layer deposition method to prepare inorganic layer B on the surface of described inorganic layer A, finally at described inorganic layer
Inorganic layer C is prepared by physical vaporous deposition or chemical vapour deposition technique in the surface of B.
Film encapsulation method the most according to claim 4, it is characterised in that described inorganic layer A, described inorganic layer B and institute
The material stating inorganic layer C is identical.
6. according to the film encapsulation method described in Claims 1 to 5 any claim, it is characterised in that described inorganic material
The material of layer is selected from aluminium oxide, silicon oxide, silicon nitride or silicon oxynitride.
7. according to the film encapsulation method described in Claims 1 to 5 any claim, it is characterised in that described physical vapor
The thickness of the inorganic layer that sedimentation prepares is 50～200nm, the inorganic layer that described chemical vapour deposition technique prepares
Thickness is 100nm～1 μm, and the thickness of the inorganic layer that described atomic layer deposition method prepares is 30～70nm.
8. according to the film encapsulation method described in Claims 1 to 5 any claim, it is characterised in that described organic material
Layer uses the method for coating, inkjet printing or evaporation to prepare, and the material of described organic material layer is selected from acrylate, asphalt mixtures modified by epoxy resin
Fat, Parylene, organosilicon.
9. according to the film encapsulation method described in Claims 1 to 5 any claim, it is characterised in that described device to be packaged
Part is Organic Light Emitting Diode, and described Organic Light Emitting Diode is the luminous Organic Light Emitting Diode in top and/or luminous organic of the end
Optical diode.
10. a thin-film packing structure, described thin-film packing structure is arranged at the surface of packaging, it is characterised in that described
Packaging surface is disposed with the first inorganic material layer, organic material layer and the second inorganic material layer, described first inorganic
Material layer and/or the second inorganic material layer include the inorganic layer B using atomic layer deposition method to prepare；Described inorganic layer B is extremely
Physical vaporous deposition it is provided with or inorganic layer A prepared by chemical vapour deposition technique on a few surface.
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