CN111628095A - OLED display substrate, manufacturing method thereof, display panel and display device - Google Patents

OLED display substrate, manufacturing method thereof, display panel and display device Download PDF

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Publication number
CN111628095A
CN111628095A CN202010511390.4A CN202010511390A CN111628095A CN 111628095 A CN111628095 A CN 111628095A CN 202010511390 A CN202010511390 A CN 202010511390A CN 111628095 A CN111628095 A CN 111628095A
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layer
electrode
light
substrate
oled display
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樊燕
李彦松
樊星
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN202010511390.4A priority Critical patent/CN111628095A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

Abstract

The invention provides an OLED display substrate and a manufacturing method thereof, a display panel and a display device, and belongs to the technical field of display. Wherein, OLED display substrates includes: a substrate base plate; a thin film transistor array layer on the substrate base plate; the light-emitting unit is positioned on one side, far away from the substrate, of the thin film transistor array layer and comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode; and a protective layer is arranged on one side of the first electrode facing the second electrode, and the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode. According to the technical scheme, the damage to the light-emitting unit can be reduced, the electric leakage of the light-emitting unit is reduced, and the display effect of the display device is ensured.

Description

OLED display substrate, manufacturing method thereof, display panel and display device
Technical Field
The invention relates to the technical field of display, in particular to an OLED display substrate, a manufacturing method thereof, a display panel and a display device.
Background
An OLED (Organic Light-Emitting Diode) display device has been classified as a next generation display technology with great development prospect due to its advantages of being thin, Light, wide in viewing angle, active in Light emission, continuously adjustable in Light color, low in cost, fast in response speed, low in energy consumption, low in driving voltage, wide in working temperature range, simple in production process, high in Light Emitting efficiency, capable of performing flexible display, and the like.
In order to increase the aperture ratio of the OLED display product, the OLED display product generally adopts a top emission structure. The top electrode of the top emission structure has a large influence on the light-emitting characteristics of the OLED display product, and the prepared top electrode has good conductivity, is beneficial to carrier injection and light extraction and is very important.
In order to ensure the transmittance of the OLED display product, the top electrode generally adopts a metal oxide transparent electrode formed in a sputtering manner, such as IZO, ITO, etc., but when the metal oxide transparent electrode is prepared by a sputtering method, because the energy in the sputtering process is high, the metal oxide prepared by sputtering may penetrate through the organic functional layer and be conducted with the bottom electrode, so that the leakage of the light emitting device is large, and the display effect of the display product is affected.
Disclosure of Invention
The invention aims to provide an OLED display substrate, a manufacturing method thereof, a display panel and a display device, which can reduce damage to a light-emitting unit, reduce electric leakage of the light-emitting unit and ensure the display effect of the display device.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, an OLED display substrate is provided, including:
a substrate base plate;
a thin film transistor array layer on the substrate base plate;
the light-emitting unit is positioned on one side, far away from the substrate, of the thin film transistor array layer and comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode;
and a protective layer is arranged on one side of the first electrode facing the second electrode, and the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode.
In some embodiments, the organic functional layer comprises, in order in a direction away from the first electrode: the light-emitting diode comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer, wherein at least one of the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer and the electron injection layer is reused as the protective layer.
In some embodiments, the hole injection layer is multiplexed as the protective layer.
In some embodiments, the OLED display substrate further comprises:
and the coupling light-emitting layer is positioned on the light-emitting side of the light-emitting unit.
The embodiment of the invention also provides a display panel which comprises the OLED display substrate.
The embodiment of the invention also provides a display device which comprises the OLED display substrate.
The embodiment of the invention also provides a manufacturing method of the OLED display substrate, which comprises the following steps:
forming a thin film transistor array layer on a substrate;
forming a light-emitting unit on one side of the thin film transistor array layer, which is far away from the substrate, wherein the light-emitting unit comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode;
forming the light emitting unit includes:
and forming a protective layer on one side of the first electrode facing the second electrode, wherein the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode.
In some embodiments, the organic functional layer comprises, in order in a direction away from the first electrode: the hole injection layer, the hole transport layer, the luminescent layer, the electron transport layer, the electron injection layer, it includes to form the protective layer:
forming at least one layer by adopting a solution film forming mode or an atomic layer deposition mode: the hole injection layer, the hole transport layer, the luminescent layer, the electron transport layer and the electron injection layer are used for reusing the film layer formed by adopting a solution film forming mode or an atomic layer deposition mode as the protective layer.
In some embodiments, the solution film-forming means comprises at least one of: spin coating, blade coating, ink jet printing.
In some embodiments, further comprising:
and a coupling light-emitting layer is formed on the light-emitting side of the light-emitting unit.
The embodiment of the invention has the following beneficial effects:
in the above scheme, be provided with the protective layer in one side of first electrode orientation second electrode, the compactness of protective layer is greater than the compactness of the organic functional layer that adopts the coating by vaporization mode to prepare, and the compactness of protective layer is better, can protect first electrode, can prevent like this when preparing the second electrode that the second electrode pierces through organic functional layer and switches on with first electrode, reduces luminescence unit's electric leakage, can also avoid preparing the damage of second electrode to first electrode simultaneously, guarantees display device's display effect.
Drawings
FIG. 1 is a schematic structural diagram of a light-emitting unit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of J-V comparison of OLED display devices fabricated by different fabrication processes.
Reference numerals
1 first electrode
2 protective layer
3 organic functional layer
4 second electrode
5 coupling light-emitting layer
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The embodiment of the invention provides an OLED display substrate, a manufacturing method thereof, a display panel and a display device, which can reduce damage to a light-emitting unit, reduce electric leakage of the light-emitting unit and ensure the display effect of the display device.
An embodiment of the present invention provides an OLED display substrate, including:
a substrate base plate;
a thin film transistor array layer on the substrate base plate;
the light-emitting unit is positioned on one side of the thin film transistor array layer, which is far away from the substrate base plate, and as shown in fig. 1, the light-emitting unit comprises a first electrode 1, a second electrode 4 and an organic functional layer 3 positioned between the first electrode 1 and the second electrode 4;
the side, facing the second electrode 4, of the first electrode 1 is provided with a protective layer 2, and the compactness of the protective layer 2 is greater than that of an organic functional layer prepared in an evaporation mode.
In the related art, most of the organic functional layers are prepared by evaporation, and the compactness is poor, so that when the second electrode is prepared by sputtering, the second electrode penetrates through the organic functional layers and is conducted with the first electrode, and the first electrode may be damaged.
In this embodiment, a protection layer is disposed on a side of the first electrode facing the second electrode, the compactness of the protection layer is greater than that of the organic functional layer prepared by an evaporation method, the compactness of the protection layer is relatively good, and the first electrode can be protected, so that when the second electrode is prepared, the second electrode penetrates through the organic functional layer and is conducted with the first electrode, electric leakage of the light emitting unit is reduced, meanwhile, damage to the first electrode caused by preparation of the second electrode can be avoided, and a display effect of the display device is ensured.
In this embodiment, the first electrode may be an anode, and the second electrode may be a cathode; the first electrode may be a cathode and the second electrode may be an anode.
The display substrate provided by the embodiment of the disclosure may be of a top emission type, in which case, the first electrode close to the substrate is in an opaque state, and the second electrode far from the substrate is in a transparent state. The display substrate may also be bottom-emitting, in which case the first electrode near the substrate is transparent and the second electrode far from the substrate is opaque. The display substrate may also be a double-sided light emitting type, in which case, the first electrode close to the substrate and the second electrode far from the substrate are both in a light transmitting state.
In the case where the first electrode or the second electrode is in a light-transmitting state, a material of the first electrode or the second electrode may be, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IGZO (Indium gallium Zinc Oxide), or the like. In the case where the first electrode or the second electrode is in the opaque state, the first electrode or the second electrode may include, for example, an ITO (Indium Tin Oxide) layer, an Ag (silver) layer, and an ITO layer, which are sequentially stacked.
In this embodiment, the protective layer 2 may be prepared by a solution film formation method or an ALD (atomic layer deposition) method, and the compactness of the thin film prepared by these methods is greater than that of the thin film prepared by an evaporation method. The solution film forming mode comprises at least one of the following modes: spin coating, blade coating, ink jet printing.
In some embodiments, the organic functional layer comprises, in order in a direction away from the first electrode: the OLED display substrate comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, wherein at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer can be prepared in a solution film forming mode or an ALD mode, so that the compactness of at least one of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer is good, the protection layer can be reused, a special protection layer does not need to be prepared in the mode, and the manufacturing process and the structure of the OLED display substrate can be simplified.
Since the hole injection layer is disposed next to the first electrode, the hole injection layer can be multiplexed as the protective layer. The hole injection layer can protect the first electrode, and the second electrode is prevented from penetrating through the organic functional layer and being conducted with the first electrode when the second electrode is prepared, so that electric leakage of the light-emitting unit is reduced, damage of the prepared second electrode to the first electrode can be avoided, and the display effect of the display device is ensured.
In this embodiment, a film layer serving as a protective layer in the organic functional layer may be prepared in a solution film forming manner or an ALD manner, then another film layer of the organic functional layer may be prepared by using an evaporation process, and finally, ITO or IZO is prepared by using a sputtering process as the second electrode, so that the transmittance of the OLED display substrate may be improved, and the OLED display substrate has high conductivity.
In some embodiments, as shown in fig. 1, the OLED display substrate further includes: and a coupling light-emitting layer 5 positioned on the light-emitting side of the light-emitting unit. The coupling light-emitting layer 5 can increase light output and improve the light-emitting efficiency of the OLED display substrate.
Fig. 2 shows J-V curve comparison of OLED display devices prepared by three different preparation methods, wherein current density is current density of the display device, Voltage is Voltage applied to the OLED display device, device1 is a first display device, device2 is a second display device, and device3 is a third display device. The first display device adopts a solution film forming mode to prepare a hole injection layer on a first electrode, then adopts an evaporation mode to prepare other subsequent film layers of an organic functional layer, and adopts a sputtering process to prepare IZO as a second electrode; in the second display device, each film layer of the organic functional layer is prepared on the first electrode in an evaporation mode, and IZO is prepared as a second electrode by adopting a sputtering process; in the third display device, each film layer of the organic functional layer and the second electrode are prepared on the first electrode by adopting an evaporation process. As can be seen from fig. 2, the current density of the second display device is larger at 10 f at reverse voltage-2mA/cm2In order of magnitude, the leakage of the second display device is large; while the current densities of the first display device and the third display device are substantially comparable, at 10-5mA/cm2In order of magnitude, the first display device is substantially free of leakage. As can be seen from the comparison of J-V curves, the film is covered on the surface of the first electrode in a solution film forming mode, and the film is denser than the film prepared by the evaporation process, protects the first electrode and can prevent sputteringThe second electrode is conducted with the first electrode, sputtering damage is reduced, and electric leakage of the device is reduced.
In this embodiment, the protective film may have a single-layer structure, or may have a composite structure formed of a plurality of films formed by a solution film formation method or an ALD method.
The embodiment of the invention also provides a display panel which comprises the OLED display substrate.
The embodiment of the invention also provides a display device which comprises the OLED display substrate. The display device includes but is not limited to: radio frequency unit, network module, audio output unit, input unit, sensor, display unit, user input unit, interface unit, memory, processor, and power supply. It will be appreciated by those skilled in the art that the above described configuration of the display device does not constitute a limitation of the display device, and that the display device may comprise more or less of the components described above, or some components may be combined, or a different arrangement of components. In the embodiment of the present invention, the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
The embodiment of the invention also provides a manufacturing method of the OLED display substrate, which comprises the following steps:
forming a thin film transistor array layer on a substrate;
forming a light-emitting unit on one side of the thin film transistor array layer, which is far away from the substrate, wherein the light-emitting unit comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode;
forming the light emitting unit includes:
and forming a protective layer on one side of the first electrode facing the second electrode, wherein the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode.
In this embodiment, a protection layer is disposed on a side of the first electrode facing the second electrode, the compactness of the protection layer is greater than that of the organic functional layer prepared by an evaporation method, the compactness of the protection layer is relatively good, and the first electrode can be protected, so that when the second electrode is prepared, the second electrode penetrates through the organic functional layer and is conducted with the first electrode, electric leakage of the light emitting unit is reduced, meanwhile, damage to the first electrode caused by preparation of the second electrode can be avoided, and a display effect of the display device is ensured.
In this embodiment, the first electrode may be an anode, and the second electrode may be a cathode; the first electrode may be a cathode and the second electrode may be an anode.
The display substrate provided by the embodiment of the disclosure may be of a top emission type, in which case, the first electrode close to the substrate is in an opaque state, and the second electrode far from the substrate is in a transparent state. The display substrate may also be bottom-emitting, in which case the first electrode near the substrate is transparent and the second electrode far from the substrate is opaque. The display substrate may also be a double-sided light emitting type, in which case, the first electrode close to the substrate and the second electrode far from the substrate are both in a light transmitting state.
In the case where the first electrode or the second electrode is in a light-transmitting state, a material of the first electrode or the second electrode may be, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IGZO (Indium gallium Zinc Oxide), or the like. In the case where the first electrode or the second electrode is in the opaque state, the first electrode or the second electrode may include, for example, an ITO (Indium Tin Oxide) layer, an Ag (silver) layer, and an ITO layer, which are sequentially stacked.
In some embodiments, the organic functional layer comprises, in order in a direction away from the first electrode: the hole injection layer, the hole transport layer, the luminescent layer, the electron transport layer, the electron injection layer, it includes to form the protective layer:
forming at least one layer by adopting a solution film forming mode or an atomic layer deposition mode: the organic light emitting diode display substrate comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, so that a film layer formed in a solution film forming mode or an atomic layer deposition mode is reused as the protective layer, a special protective layer does not need to be prepared in the mode, and the manufacturing process and the structure of the OLED display substrate can be simplified.
In some embodiments, the solution film-forming means comprises at least one of: spin coating, blade coating, ink jet printing.
Since the hole injection layer is disposed next to the first electrode, the hole injection layer can be multiplexed as the protective layer. The hole injection layer can protect the first electrode, and the second electrode is prevented from penetrating through the organic functional layer and being conducted with the first electrode when the second electrode is prepared, so that electric leakage of the light-emitting unit is reduced, damage of the prepared second electrode to the first electrode can be avoided, and the display effect of the display device is ensured.
In this embodiment, a film layer serving as a protective layer in the organic functional layer may be prepared in a solution film forming manner or an ALD manner, then another film layer of the organic functional layer may be prepared by using an evaporation process, and finally, ITO or IZO is prepared by using a sputtering process as the second electrode, so that the transmittance of the OLED display substrate may be improved, and the OLED display substrate has high conductivity.
In some embodiments, the method further comprises:
and a coupling light-emitting layer is formed on the light-emitting side of the light-emitting unit. The coupling light-emitting layer can increase light output and improve the light-emitting efficiency of the OLED display substrate.
In one embodiment, forming the light emitting unit may include:
step 1, preparing a first electrode on a thin film transistor array substrate;
the method for preparing the first electrode is not limited, and the first electrode can be formed by evaporation, sputtering and other methods;
step 2, preparing a hole injection layer on the first electrode by adopting a solution film forming mode (such as spin coating, blade coating, ink-jet printing and the like);
step 3, preparing all organic functional layers on the hole injection layer by adopting an evaporation process, wherein the organic functional layers comprise a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and the like;
and 4, preparing a layer of transparent metal oxide on the organic functional layer by a sputtering process to be used as a second electrode, wherein ITO, IZO and the like can be adopted.
In this embodiment, the hole injection layer can protect the first electrode, and prevent that the second electrode penetrates through the organic functional layer and is conducted with the first electrode when the second electrode is prepared, so as to reduce the electric leakage of the light-emitting unit, and meanwhile, the damage of the prepared second electrode to the first electrode can be avoided, and the display effect of the display device is ensured.
In the embodiments of the methods of the present invention, the sequence numbers of the steps are not used to limit the sequence of the steps, and for those skilled in the art, the sequence of the steps is not changed without creative efforts.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (10)

1. An OLED display substrate, comprising:
a substrate base plate;
a thin film transistor array layer on the substrate base plate;
the light-emitting unit is positioned on one side, far away from the substrate, of the thin film transistor array layer and comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode;
and a protective layer is arranged on one side of the first electrode facing the second electrode, and the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode.
2. The OLED display substrate of claim 1, wherein the organic functional layers comprise, in order in a direction away from the first electrode: the light-emitting diode comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer, wherein at least one of the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer and the electron injection layer is reused as the protective layer.
3. The OLED display substrate of claim 2, wherein the hole injection layer is multiplexed into the protective layer.
4. The OLED display substrate of claim 1, further comprising:
and the coupling light-emitting layer is positioned on the light-emitting side of the light-emitting unit.
5. A display panel comprising the OLED display substrate of any one of claims 1-4.
6. A display device comprising the OLED display substrate of any one of claims 1-4.
7. A manufacturing method of an OLED display substrate is characterized by comprising the following steps:
forming a thin film transistor array layer on a substrate;
forming a light-emitting unit on one side of the thin film transistor array layer, which is far away from the substrate, wherein the light-emitting unit comprises a first electrode, a second electrode and an organic functional layer positioned between the first electrode and the second electrode;
forming the light emitting unit includes:
and forming a protective layer on one side of the first electrode facing the second electrode, wherein the compactness of the protective layer is greater than that of the organic functional layer prepared by adopting an evaporation mode.
8. The method of claim 7, wherein the organic functional layer comprises, in order in a direction away from the first electrode: the hole injection layer, the hole transport layer, the luminescent layer, the electron transport layer, the electron injection layer, it includes to form the protective layer:
forming at least one layer by adopting a solution film forming mode or an atomic layer deposition mode: the hole injection layer, the hole transport layer, the luminescent layer, the electron transport layer and the electron injection layer are used for reusing the film layer formed by adopting a solution film forming mode or an atomic layer deposition mode as the protective layer.
9. The method for manufacturing the OLED display substrate according to claim 8, wherein the solution film forming manner comprises at least one of the following: spin coating, blade coating, ink jet printing.
10. The method for manufacturing the OLED display substrate according to claim 7, further comprising:
and a coupling light-emitting layer is formed on the light-emitting side of the light-emitting unit.
CN202010511390.4A 2020-06-08 2020-06-08 OLED display substrate, manufacturing method thereof, display panel and display device Pending CN111628095A (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN114583090A (en) * 2022-02-22 2022-06-03 深圳市华星光电半导体显示技术有限公司 OLED light-emitting device, preparation method thereof and display panel
WO2023206681A1 (en) * 2022-04-29 2023-11-02 武汉华星光电半导体显示技术有限公司 Display panel

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