CN108878688B - Organic light-emitting diode, preparation method thereof and display device - Google Patents
Organic light-emitting diode, preparation method thereof and display device Download PDFInfo
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
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Abstract
The invention provides an organic light-emitting diode, a preparation method thereof and a display device, and belongs to the technical field of display. The organic electroluminescent diode of the present invention comprises: the pixel structure comprises a substrate, a first pole, a pixel limiting layer, a light emitting layer, a second pole and an encapsulation layer, wherein the first pole, the pixel limiting layer, the light emitting layer, the second pole and the encapsulation layer are sequentially arranged on the substrate; the packaging layer comprises at least one group of first thin film groups; the first thin film group comprises a first inorganic film layer and a first organic film layer which are sequentially arranged along the direction deviating from the second pole; a groove is formed in the position, corresponding to the retaining wall of the pixel limiting layer, of the first thin film group; the organic electroluminescent diode further comprises an auxiliary electrode; the auxiliary electrode is electrically connected with the second pole through the slot.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to an organic light-emitting diode, a preparation method thereof and a display device.
Background
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED for short)
The OLED has the self-luminous characteristic, and when current flows, the OLED emits light. With the rapid progress of display technology, semiconductor device technology, which is the core of display devices, has also been dramatically advanced. For the existing display devices, organic light emitting diodes, which are a current type light emitting device, are increasingly used in the field of high performance display due to their characteristics of self-luminescence, fast response, wide viewing angle, and being capable of being fabricated on a flexible substrate.
Generally, an OLED includes a substrate, a first electrode, a light emitting layer, a second electrode, and an encapsulation layer sequentially disposed on the substrate; the OLED is further divided into a top-emission type and a bottom-emission type according to the light emitting direction thereof, and the light emitting direction of the top-emission type OLED faces the second pole, which requires that the conductive metal of the second pole is thinner to enable light to be emitted well, but the second pole has a higher resistance along with the thinning of the second pole, so that for a large-sized display panel, the second pole has a higher resistance, which inevitably causes an IR drop problem, resulting in non-uniformity of the display panel.
Therefore, how to improve the problem of non-uniform display of the display panel caused by the second electrode resistance is a technical problem which needs to be solved urgently.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides an organic electroluminescent diode and a method for manufacturing the same, which can improve the display uniformity of a display panel. A display device.
The technical scheme adopted for solving the technical problem of the invention is an organic electroluminescent diode, which comprises the following components: the pixel structure comprises a substrate, a first pole, a pixel limiting layer, a light emitting layer, a second pole and an encapsulation layer, wherein the first pole, the pixel limiting layer, the light emitting layer, the second pole and the encapsulation layer are sequentially arranged on the substrate; the packaging layer comprises at least one group of first thin film groups; the first thin film group comprises a first inorganic film layer and a first organic film layer which are sequentially arranged along the direction deviating from the second pole; a groove is formed in the position, corresponding to the retaining wall of the pixel limiting layer, of the first thin film group; the organic electroluminescent diode further comprises an auxiliary electrode; the auxiliary electrode is electrically connected with the second pole through the slot.
Preferably, the first electrode is a reflective electrode and the second electrode is a transmissive electrode.
Preferably, an etching barrier conductive layer is further disposed at a position corresponding to the trench; the second electrode is connected to the auxiliary electrode through the etching blocking conductive layer.
It is further preferred that the material of the etch barrier conductive layer comprises a metal or an organic material.
Preferably, the thickness of the first organic film layer is greater than the thickness of the first inorganic film layer.
Preferably, at least one group of second thin film groups is further arranged above the layer on which the auxiliary electrode is arranged; the second thin film group comprises a second organic film layer and a second inorganic film layer which are sequentially arranged along the direction deviating from the auxiliary electrode.
Preferably, a second inorganic film layer is further disposed above the layer on which the auxiliary electrode is disposed.
The technical scheme adopted for solving the technical problem of the invention is a preparation method of an organic light-emitting diode, which comprises the following steps: sequentially forming a first pole, a pixel limiting layer, a light emitting layer, a second pole and a packaging layer on a substrate; forming the encapsulation layer includes forming at least one set of first thin film groups; forming the first thin film group comprises sequentially forming a first inorganic film layer and a first organic film layer along a direction deviating from the second pole; the preparation method of the organic electroluminescent diode further comprises the following steps:
forming a groove at a position of the first thin film group corresponding to the retaining wall of the pixel limiting layer;
forming an auxiliary electrode; the auxiliary electrode is electrically connected with the second pole through the slot.
Preferably, the step of forming a groove at a position of the first thin film group corresponding to the bank of the pixel defining layer includes:
forming a first inorganic film layer;
forming a first organic film layer by means of ink-jet printing, and reserving a first part of the slot in the first organic film layer;
and removing the inorganic material corresponding to the first part of the first inorganic film layer to form the slot.
Preferably, the method further includes, between forming the second pole and the encapsulation layer:
an etch stop conductive layer is formed over the second pole.
Preferably, after the forming of the auxiliary electrode, the method further includes:
forming at least one group of second thin film groups above the layer on which the auxiliary electrode is positioned; and forming the second thin film group comprises sequentially forming a second organic film layer and a second inorganic film layer along the direction departing from the auxiliary electrode.
Preferably, after the forming of the auxiliary electrode, the method further includes:
and a second inorganic film layer is also formed above the auxiliary electrode layer.
The display device comprises the organic electroluminescent diode.
Drawings
Fig. 1 is a schematic structural view of an organic electroluminescent diode according to embodiment 1 of the present invention;
fig. 2 is a schematic structural view of an organic electroluminescent diode according to embodiment 1 of the present invention;
fig. 3 is another schematic structural view of an organic electroluminescent diode according to embodiment 1 of the present invention;
fig. 4 is a flowchart of a method of manufacturing an organic electroluminescent diode of embodiment 2 of the present invention.
Wherein the reference numerals are: 10. a substrate; 1. an anode; 2. a cathode; 3. a light emitting layer; 4. a pixel defining layer; 5. a first thin film group; 51. a first inorganic film layer; 52. a first organic film layer; 6. an auxiliary electrode; 7. etching the barrier conductive layer; 8. a second thin film group; 81. a second inorganic film layer; 82. a second organic film layer; 9. and (4) slotting.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
An organic electroluminescent diode, i.e., an OLED device, generally includes a first pole, a second pole, and a light emitting layer disposed between the first pole and the second pole; wherein one of the first pole and the second pole is a cathode and the other is an anode; in this embodiment, the first electrode is an anode, and the second electrode is a cathode.
The anode is used as a connecting layer of the forward voltage of the organic light-emitting diode and has better conductivity, visible light transparency and higher work function value. The anode is usually made of inorganic metal oxide (such as Indium Tin Oxide (ITO), zinc oxide (ZnO), etc.) or organic conductive polymer (such as PEDOT: PSS, PANI, etc.) or metal material with high work function value (such as gold, copper, silver, platinum, etc.).
The cathode is used as a connecting layer of the negative voltage of the organic electroluminescent device and has better conductivity and lower work function value. The cathode is usually made of a metal material with a low work function value, such as: lithium, magnesium, calcium, strontium, aluminum, indium, etc., or an alloy of the above-mentioned metal material with low work function value and copper, gold, silver.
It should be noted that the present embodiment is mainly described by taking a top-emission organic electroluminescent diode as an example, that is, the cathode is a reflective electrode, and the cathode is a transmissive electrode, so that the thickness of the cathode is required to be sufficiently thin, about 10 nm.
The following description will be made with reference to specific examples of an organic electroluminescent diode, a method of manufacturing the organic electroluminescent diode, and a display device using the organic electroluminescent diode.
Example 1:
as shown in fig. 1, the present embodiment provides an organic electroluminescent diode including: the light-emitting diode comprises a substrate 10, an anode 1, a pixel limiting layer 4, a light-emitting layer 3, a cathode 2 and an encapsulation layer, wherein the anode 1, the pixel limiting layer 4, the light-emitting layer 3, the cathode 2 and the encapsulation layer are sequentially arranged on the substrate 10; the encapsulation layer comprises at least one group of first thin film groups 5; the first thin film group 5 comprises a first inorganic film layer 51 and a first organic film layer 52 which are sequentially arranged along the direction departing from the cathode 2; the first thin film group 5 is provided with a slot 9 at the position corresponding to the retaining wall of the pixel limiting layer 4; the organic electroluminescent diode further includes an auxiliary electrode 6; the auxiliary electrode 6 is electrically connected to the cathode 2 through the slit 9.
Since the cathode 2 of the organic electroluminescent diode in this embodiment is electrically connected to the auxiliary electrode 6 through the slot 9 in the first thin film group 5, that is, the cathode 2 and the auxiliary electrode 6 in this embodiment are equivalent to the cathode 2 in the prior art, and the cathode 2 and the auxiliary electrode 6 in this embodiment are connected in parallel, and the resistance of the two is significantly smaller than the resistance of the cathode 2 in the prior art, when the organic electroluminescent diode in this embodiment is applied to a display panel, the problem of IR drop caused by the thin thickness and large resistance of the cathode 2 can be effectively alleviated. Meanwhile, since the grooves 9 for electrically connecting the cathode 2 and the auxiliary electrode 6 in the embodiment penetrate through the first inorganic film 51 and the first organic film 52 in the first thin film group 5, at this time, after the first partial structure of the grooves 9 is formed in the first organic film 52 located above the first inorganic film 51, the first inorganic film 51 is etched to form the grooves 9, and at this time, impurities such as water, oxygen, and the like can be effectively prevented from polluting the light-emitting layer 3 of the organic electroluminescent diode, so that the service life of the organic electroluminescent diode is affected.
Wherein, an etching barrier conductive layer 7 is also arranged at the position corresponding to the slot 9; the cathode 2 is connected to said auxiliary electrode 6 by means of an etch-blocking conductive layer 7. That is, the etching stop conductive layer 7 is located above the cathode 2 and is in contact with the cathode 2, and is disposed because the cathode 2 has a small thickness, and the cathode 2 is prevented from being damaged when the first inorganic film layer 51 on the cathode 2 is etched. It should be understood, of course, that the etching stop conductive layer 7 does not overlap the projection of the light-emitting layer 3 on the substrate 10, in order to avoid that the etching stop conductive layer 7 affects the light emission of the organic electroluminescent diode.
The material of the etching-blocking conductive layer 7 may be a metal material, specifically, at least one of aluminum, silver, and magnesium, or other metal materials with better conductivity. Of course, the material of the etching-blocking conductive layer 7 in this embodiment may be a conductive organic material, and specifically, may be a heavily doped (N + doping) material.
In this embodiment, in order to prevent the auxiliary electrode 6 from being corroded and oxidized, which affects the lifetime of the organic electroluminescent diode, it is preferable that a second inorganic film layer 81 is further disposed above the layer where the auxiliary electrode 6 is located, as shown in fig. 2. Of course, as shown in fig. 3, at least one second thin film group may be disposed above the auxiliary electrode 6, and the second thin film group includes a second organic film layer 82 and a second inorganic film layer 81 sequentially disposed along a direction away from the auxiliary electrode 6. Namely, the packaging layer is equivalent to the auxiliary cathode 2, and the inorganic film layer and the organic film layer are matched for packaging, so that the water resistance and the stress are facilitated.
In this embodiment, the thickness of the first organic film layer 52 in each first thin film group 5 is greater than the thickness of the first inorganic film layer 51, so that the first organic film layer 52 completely covers the first inorganic film layer 51, and impurities such as water, oxygen, etc. are prevented from polluting the organic electroluminescent diode.
Example 2:
this example provides a method for preparing an organic electroluminescent diode, which can be used to prepare the organic electroluminescent diode of example 1. The preparation method comprises the following steps: sequentially forming an anode 1, a pixel defining layer 4, a light emitting layer 3, a cathode 2 and an encapsulation layer on a substrate 10; forming the encapsulation layer includes forming at least one set of first thin-film groups 5; forming the first thin film group 5 includes sequentially forming a first inorganic film layer 51 and a first organic film layer 52 along a direction departing from the second polarity; particularly, the preparation method of the organic electroluminescent diode further comprises the following steps: forming a slot 9 at the position of the first thin film group 5 corresponding to the retaining wall of the pixel limiting layer 4; forming an auxiliary electrode 6; the auxiliary electrode 6 is electrically connected to the second pole through the slot 9.
Since the cathode 2 of the organic electroluminescent diode formed by the preparation method in this embodiment is electrically connected to the auxiliary electrode 6 through the slot 9 in the first thin film group 5, that is, the cathode 2 and the auxiliary electrode 6 in this embodiment are equivalent to the cathode 2 in the prior art, and the cathode 2 and the auxiliary electrode 6 in this embodiment are connected in parallel, and the resistance of the two is significantly smaller than the resistance of the cathode 2 in the prior art, when the organic electroluminescent diode in this embodiment is applied to a display panel, the problem of IR drop caused by the thin thickness and large resistance of the cathode 2 can be effectively alleviated. Meanwhile, since the grooves 9 for electrically connecting the cathode 2 and the auxiliary electrode 6 in the embodiment penetrate through the first inorganic film 51 and the first organic film 52 in the first thin film group 5, at this time, after the first partial structure of the grooves 9 is formed in the first organic film 52 located above the first inorganic film 51, the first inorganic film 51 is etched to form the grooves 9, and at this time, impurities such as water, oxygen, and the like can be effectively prevented from polluting the light-emitting layer 3 of the organic electroluminescent diode, so that the service life of the organic electroluminescent diode is affected.
The production method in this example will be described below with reference to steps for specifically forming an organic electroluminescent device. In this case, the first thin film group 5 and the second thin film group are taken as an example. As shown in fig. 4, the preparation method in this embodiment specifically includes:
step one, forming a pattern of an anode 1 including an organic electroluminescent device on a substrate 10 through a patterning process.
And step two, forming a pixel limiting layer 4 on the substrate 10 after the step by a patterning process, wherein a containing part is formed at the position of the pixel limiting layer 4 corresponding to the anode 1 by etching.
And step three, forming the light-emitting layer 3 of the organic electroluminescent device in the accommodating part by an evaporation process on the substrate 10 after the step is completed.
And step four, forming the cathode 2 of the organic electroluminescent device on the substrate 10 after the step through an evaporation process. Wherein the cathode 2 covers the banks of the light-emitting layer 3 and the pixel defining layer 4.
And step five, forming an etching barrier conductive layer 7 on the substrate 10 after the step is finished and on the cathode 2. This is because the cathode 2 is thin, and the cathode 2 is prevented from being damaged when the first inorganic film layer 51 on the cathode 2 is etched. It should be understood, of course, that the etching stop conductive layer 7 does not overlap the projection of the light-emitting layer 3 on the substrate 10, in order to avoid that the etching stop conductive layer 7 affects the light emission of the organic electroluminescent diode.
Sixthly, forming a first inorganic film layer 51 on the substrate 10 after the step in an ink-jet printing mode; thereafter, the first organic film 52 is formed by inkjet printing, and a first portion of the trench is reserved in the first organic film 52.
And seventhly, removing the first inorganic film layer 51 material below the first part of the groove through an etching process on the substrate 10 after the step is completed, and forming the groove 9.
Step eight, forming a pattern comprising the auxiliary electrode 6 on the substrate 10 after the step through a composition process; wherein the auxiliary electrode 6 is electrically connected to the etch barrier conductive layer 7 through the trench 9. It should be understood that the auxiliary electrode 6 does not overlap with the projection of the light-emitting layer 3 onto the substrate 10, in order to avoid that the auxiliary electrode 6 affects the light emission of the organic electroluminescent diode.
And step nine, sequentially forming a second organic film layer 82 and a second inorganic film layer 81 on the substrate 10 after the step in an ink-jet printing mode.
Of course, for step nine, only the second inorganic film layer 81 may be formed to encapsulate the auxiliary electrode 6.
Example 3:
this embodiment provides a display device including the organic electroluminescent diode of embodiment 1. Wherein the auxiliary electrodes 6 of adjacent organic electroluminescent devices in the display device are connected together, and each auxiliary electrode 6 forms a net structure.
Since the display device in this embodiment includes the organic electroluminescent diode in embodiment 1, the display thereof is uniform.
The display device is an OLED display device, such as any product or component with a display function, such as electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. An organic electroluminescent diode comprising: the pixel structure comprises a substrate, a first pole, a pixel limiting layer, a light emitting layer, a second pole and an encapsulation layer, wherein the first pole, the pixel limiting layer, the light emitting layer, the second pole and the encapsulation layer are sequentially arranged on the substrate; the packaging layer comprises at least one group of first thin film groups; the first thin film group comprises a first inorganic film layer and a first organic film layer which are sequentially arranged along the direction deviating from the second pole; the pixel structure is characterized in that a groove is formed in the position, corresponding to the retaining wall of the pixel limiting layer, of the first thin film group; the organic electroluminescent diode further comprises an auxiliary electrode; the auxiliary electrode is electrically connected with the second pole through the slot;
an etching barrier conductive layer is arranged at the position corresponding to the slot; the second pole is connected with the auxiliary electrode through the etching blocking conducting layer, and the etching blocking conducting layer is located on the second pole.
2. The organic electroluminescent diode of claim 1, wherein the first electrode is a reflective electrode and the second electrode is a transmissive electrode.
3. The organic electroluminescent diode of claim 1, wherein the material of the etch barrier conductive layer comprises a metal or an organic material.
4. The organic electroluminescent diode of claim 1, wherein the first organic film layer has a thickness greater than a thickness of the first inorganic film layer.
5. The organic electroluminescent diode as claimed in claim 1, wherein at least one second thin film group is further disposed above the layer on which the auxiliary electrode is disposed; the second thin film group comprises a second organic film layer and a second inorganic film layer which are sequentially arranged along the direction deviating from the auxiliary electrode.
6. The organic electroluminescent diode of claim 1, wherein a second inorganic film layer is further disposed over the layer on which the auxiliary electrode is disposed.
7. A method for preparing an organic electroluminescent diode comprises the following steps: sequentially forming a first pole, a pixel limiting layer, a light emitting layer, a second pole and a packaging layer on a substrate; forming the encapsulation layer includes forming at least one set of first thin film groups; forming the first thin film group comprises sequentially forming a first inorganic film layer and a first organic film layer along a direction deviating from the second pole; the preparation method of the organic electroluminescent diode is characterized by further comprising the following steps:
forming a groove at a position of the first thin film group corresponding to the retaining wall of the pixel limiting layer;
forming an auxiliary electrode; the auxiliary electrode is electrically connected with the second pole through the slot;
further comprising, between forming the second pole and the encapsulation layer:
an etch stop conductive layer is formed over the second pole.
8. The method according to claim 7, wherein the step of forming the trench at the position of the first thin film group corresponding to the retaining wall of the pixel defining layer comprises:
forming a first inorganic film layer;
forming a first organic film layer by means of ink-jet printing, and reserving a first part of the slot in the first organic film layer;
and removing the inorganic material corresponding to the first part of the first inorganic film layer to form the slot.
9. The method for manufacturing an organic electroluminescent diode according to claim 7, further comprising, after the forming of the auxiliary electrode:
forming at least one group of second thin film groups above the layer on which the auxiliary electrode is positioned; and forming the second thin film group comprises sequentially forming a second organic film layer and a second inorganic film layer along the direction departing from the auxiliary electrode.
10. The method for manufacturing an organic electroluminescent diode according to claim 7, further comprising, after the forming of the auxiliary electrode:
and a second inorganic film layer is also formed above the auxiliary electrode layer.
11. A display device comprising the organic electroluminescent diode according to any one of claims 1 to 6.
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| CN109585699B (en) * | 2018-12-05 | 2020-12-29 | 合肥鑫晟光电科技有限公司 | OLED display panel, manufacturing method thereof and display device |
| CN109742260A (en) * | 2019-01-09 | 2019-05-10 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display device |
| CN109742122B (en) * | 2019-01-10 | 2021-08-06 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display panel |
| CN109817694B (en) * | 2019-03-26 | 2021-09-07 | 京东方科技集团股份有限公司 | Organic light-emitting display panel, manufacturing method and display device |
| CN110190101B (en) * | 2019-05-28 | 2021-10-26 | 上海天马有机发光显示技术有限公司 | Electroluminescent display panel, manufacturing method thereof and display device |
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