CN106299047A - AlInGaN base ultraviolet LED epitaxial structure and manufacture method thereof - Google Patents
AlInGaN base ultraviolet LED epitaxial structure and manufacture method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 182
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000011247 coating layer Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052681 coesite Inorganic materials 0.000 claims description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 229910052682 stishovite Inorganic materials 0.000 claims description 21
- 229910052905 tridymite Inorganic materials 0.000 claims description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 17
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 230000006872 improvement Effects 0.000 description 7
- 238000007788 roughening Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- -1 certainly Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000013500 data storage Methods 0.000 description 1
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- 235000008434 ginseng Nutrition 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The present invention provides a kind of AlInGaN base ultraviolet LED epitaxial structure and manufacture method thereof, and LED epitaxial structure includes successively: substrate；High temperature u AlGaN layer；The high temperature n AlGaN layer being positioned in high temperature u AlGaN layer；The n AlGaN roughened layer being positioned in high temperature n AlGaN layer；Being positioned at the low temperature AI InGaN/AlGaN superlattice layer on n AlGaN roughened layer, low temperature AI InGaN/AlGaN superlattice layer includes low temperature AI InGaN layer and the low temperature AI GaN layer that stacking arranges；The high temperature p AlGaN electronic barrier layer being positioned on low temperature AI InGaN/AlGaN superlattice layer；The high temperature p AlGaN coating layer being positioned on high temperature p AlGaN electronic barrier layer；The high temperature p GaN contact layer being positioned on high temperature p AlGaN coating layer；Wherein, between substrate and high temperature u AlGaN layer, SiO is set2Patterned mask and cushion.The present invention uses N-shaped AlGaN roughened layer, subsequent epitaxial layer continue this coarse surface growth, thus interrupt continuous print two dimensional surface growth, make light produced by luminous zone be able to from side export, it is to avoid light in plane multiple reflections finally by absorption loss.
Description
Technical field
The present invention relates to LED technology field, particularly relate to a kind of ultraviolet LED epitaxial structure and manufacture method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is widely used in display, television set daylighting dress
Decorations and illumination.
Along with the development of technology, UV LED (UV LED) is at biologic medical, authentication, purification (water, sky
Gas etc.) field, computer data storage and the aspect such as military affairs have wide market application foreground.In addition, ultraviolet LED is also
Increasingly paid close attention to by illumination market.Because exciting three primary colors fluorescent powder by ultraviolet LED, the white of general lighting can be obtained
Light.
But, aluminum gallium nitride (AlInGaN) base ultraviolet LED is epitaxially grown in Sapphire Substrate, and luminous trap bears to open and answers
Power, causes band energy heavier hole, light holes cave band high so that the polarization in radiation recombination time presents horizontal magnetic (TM) mode, the biography of light
Broadcast and tend to plane propagation, light planar after multiple reflections by absorption loss, and then affect the output of light.
Summary of the invention
It is an object of the invention to provide a kind of AlInGaN base ultraviolet LED epitaxial structure and manufacture method thereof, to solve purple
Outer LED causes, because light is depleted when plane propagation, the problem that light extraction efficiency is low.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of AlInGaN base ultraviolet LED epitaxial structure, described LED epitaxial structure includes successively:
Substrate；
High temperature u-AlGaN layer；
It is positioned at the high temperature n-AlGaN layer on described high temperature u-AlGaN layer；
It is positioned at the n-AlGaN roughened layer on described high temperature n-AlGaN layer；
It is positioned at the low temperature AI InGaN/AlGaN superlattice layer on described n-AlGaN roughened layer, described low temperature AI InGaN/AlGaN
Superlattice layer includes low temperature AI InGaN layer and the low temperature AI GaN layer that stacking arranges；
The high temperature p-AlGaN electronic barrier layer being positioned on described low temperature AI InGaN/AlGaN superlattice layer；
It is positioned at the high temperature p-AlGaN coating layer on described high temperature p-AlGaN electronic barrier layer；
It is positioned at the high temperature p-GaN contact layer on described high temperature p-AlGaN coating layer；
Wherein, between described substrate and high temperature u-AlGaN layer, SiO is set2Patterned mask and cushion.
As a further improvement on the present invention, described SiO2Patterned mask is Triangular array arrangement, adjacent described
Interval is set between equilateral triangle.
As a further improvement on the present invention, the described equilateral triangle length of side 1 ~ 5 μm.
As a further improvement on the present invention, 0.1 ~ 0.5 μm it is spaced between adjacent described equilateral triangle.
As a further improvement on the present invention, at described cushion interval between described adjacent equilateral triangle.
As a further improvement on the present invention, described SiO2Patterned mask is prepared on described cushion.
As a further improvement on the present invention, described cushion is AlGaN or AlN cushion.
As a further improvement on the present invention, described AlInGaN/AlGaN superlattice layer includes that 3 ~ 15 cycle stackings set
The low temperature AI InGaN layer put and low temperature AI GaN layer.
Correspondingly, the manufacture method of a kind of AlInGaN base ultraviolet LED epitaxial structure, said method comprising the steps of:
S1, SiO will be made in advance2The substrate of figure is placed on the load plate in MOCVD reative cell, and to lining at 1080 ~ 1100 DEG C
The end, carries out high-temperature process 5 ~ 10 minutes；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1080 ~ 1200 DEG C, under the conditions of 50 ~ 200Torr, the high temperature u-AlGaN layer of growth 2 ~ 4 μm；
S4,1080 ~ 1150 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-AlGaN layer of growth 1 ~ 2 μm, doping content is
5E18~1E19；
S5,900 ~ 1050 DEG C, under the conditions of 300 ~ 600Torr, the n-AlGaN roughened layer of growth 0.5 ~ 1 μm, doping content is
5E18~1E19；
S6,950 ~ 1100 DEG C, under the conditions of 200 ~ 300Torr, grow low temperature AI InGaN layer and the AlGaN layer of 1 ~ 50nm successively,
Repeat 3 ~ 15 cycles, form low temperature AI InGaN/AlGaN superlattice layer；
S7,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 100nm；
S8,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN coating layer of growth 20 ~ 80nm；
S9,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN contact layer of growth 5 ~ 20nm.
Correspondingly, the manufacture method of another AlInGaN base ultraviolet LED epitaxial structure, said method comprising the steps of:
S1 ', on substrate, outside stove, prepare cushion；
S2 ', on cushion plating SiO2And make figure, with Fluohydric acid., BOE or plasma by pattern spacing region
SiO2Etching is removed；
S3 ', 1080 ~ 1200 DEG C, under the conditions of 50 ~ 200Torr, the high temperature u-AlGaN layer of growth 2 ~ 4 μm；
S4 ', 1080 ~ 1150 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-AlGaN layer of growth 1 ~ 2 μm, doping content is
5E18~1E19；
S5 ', 900 ~ 1050 DEG C, under the conditions of 300 ~ 600Torr, the n-AlGaN roughened layer of growth 0.5 ~ 1 μm, doping content is
5E18~1E19；
S6 ', 950 ~ 1100 DEG C, under the conditions of 200 ~ 300Torr, grow low temperature AI InGaN layer and the AlGaN of 1 ~ 50nm successively
Layer, repeats 3 ~ 15 cycles, forms low temperature AI InGaN/AlGaN superlattice layer；
S7 ', 950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 100nm；
S8 ', 950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN coating layer of growth 20 ~ 80nm；
S9 ', 800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN contact layer of growth 5 ~ 20nm.
Compared with prior art, the present invention uses N-shaped AlGaN roughened layer, and subsequent epitaxial layer continues the growth of this coarse surface,
Thus interrupt the growth of continuous print two dimensional surface, make light produced by luminous zone be able to from side and export, it is to avoid light is many in plane
Secondary reflection is finally by absorption loss.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments described in invention, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of AlInGaN base ultraviolet LED epitaxial structure in the present invention；
Fig. 2 is the structural representation of substrate layer in the present invention；
Fig. 3 is SiO in Fig. 22The close-up schematic view of figure.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, real below in conjunction with the present invention
Execute the accompanying drawing in example, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described enforcement
Example is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, this area is common
The every other embodiment that technical staff is obtained under not making creative work premise, all should belong to present invention protection
Scope.
Shown in ginseng Fig. 1, the invention discloses a kind of AlInGaN base ultraviolet LED epitaxial structure, include the most successively:
Substrate 10, cushion 20, high temperature u-AlGaN layer 30, high temperature n-AlGaN layer 40, n-AlGaN roughened layer 50, low temperature AI InGaN/
AlGaN superlattice layer 60, high temperature p-AlGaN electronic barrier layer 70, high temperature p-AlGaN coating layer 80 and high temperature p-GaN layer 90.
The epitaxial structure of the present invention uses n-AlGaN roughened layer 50, and subsequent epitaxial layer continues the growth of this coarse surface, finally
Surface presents irregular state, forms roughening V-type opening 100, limits one for low temperature AI InGaN/AlGaN ultra-violet light-emitting layer 60
Side goes out optical channel.As illustrated by the arrows in fig. 1, the light that low temperature AI InGaN/AlGaN superlattice layer 60 produces is at least partly from slightly
Change V-type opening 100 to export, improve light extraction efficiency.
It should be appreciated that the most corresponding different epitaxial layers of each epitaxial layer defined " high temperature " or " low temperature " in the present invention
Different temperatures in growth technique, the scope of " high temperature " or " low temperature " correspondence in different epitaxial layers is different.
Specifically, below each epitaxial layer of LED epitaxial structure is specifically described.
Substrate 10, it is preferable that this substrate is graphical sapphire substrate, certainly, substrate can also serve as a contrast for plain film sapphire
The end or the plain film of other materials or patterned substrate.Substrate 10 can make SiO in advance2Figure, with reference to Fig. 2 and Fig. 3, SiO2Figure contains
Densely arranged Triangular array, arranges interval between adjacent equilateral triangle.Wherein, the equilateral triangle length of side 1 ~ 5 μm, interval
0.1~0.5μm。SiO2It is substrate exposed region at pattern spacing, with SiO2For mask, subsequent epitaxial layer is in this substrate exposed region
Epitaxial growth.
Cushion 20, for low temperature AI GaN layer or AlN layer etc..Further, cushion can be at MOCVD growth in situ, also
Physical deposition mode can be used in advance to carry out pregrown such as sputtering.Wherein, if using pregrown AlN technique, can be first to substrate
10 carry out AlN grows to prepare cushion 20, then carries out SiO2 Prepared by figure, make AlN cushion 20 local exposed.
Grow under the conditions of high temperature u-AlGaN layer 30(1080 ~ 1200 DEG C, 50 ~ 200Torr), this layer thickness is 2 ~ 4 μm.
Grow under the conditions of high temperature n-AlGaN layer 40(1080 ~ 1150 DEG C, 100 ~ 200Torr), this layer thickness is 1 ~ 2 μm, mixes
Miscellaneous concentration is 5E18 ~ 1E19.
Grow under the conditions of n-AlGaN roughened layer 50(900 ~ 1050 DEG C, 300 ~ 600Torr), this layer thickness is 0.5 ~ 1 μm,
Doping content is 5E18 ~ 1E19.
Grow under the conditions of low temperature AI InGaN/AlGaN superlattice layer 60(950 ~ 1100 DEG C, 200 ~ 300Torr), low temperature
AlInGaN/AlGaN superlattice layer includes low temperature AI InGaN layer and low temperature AI GaN layer, such shape of 1 ~ 50nm that stacking arranges
Become luminescent layer.
Grow under the conditions of high temperature p-AlGaN electronic barrier layer 70(950 ~ 1100 DEG C, 100 ~ 400Torr), this layer thickness is
30~100nm。
Grow under the conditions of high temperature p-AlGaN coating layer 80(950 ~ 1100 DEG C, 100 ~ 400Torr), this layer thickness is 20 ~
80nm。
Grow under the conditions of high temperature p-GaN contact layer 90(800 ~ 1000 DEG C, 100 ~ 400Torr), this layer thickness is 5 ~ 20nm.
Correspondingly, the manufacture method of a kind of AlInGaN base ultraviolet LED epitaxial structure, specifically include following steps:
S1, SiO will be made in advance2The substrate of figure is placed on the load plate in MOCVD reative cell, and to lining at 1080 ~ 1100 DEG C
The end, carries out high-temperature process 5 ~ 10 minutes；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1080 ~ 1200 DEG C, under the conditions of 50 ~ 200Torr, the high temperature u-AlGaN layer of growth 2 ~ 4 μm；
S4,1080 ~ 1150 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-AlGaN layer of growth 1 ~ 2 μm, doping content is
5E18~1E19；
S5,900 ~ 1050 DEG C, under the conditions of 300 ~ 600Torr, the n-AlGaN roughened layer of growth 0.5 ~ 1 μm, doping content is
5E18~1E19；
S6,950 ~ 1100 DEG C, under the conditions of 200 ~ 300Torr, grow low temperature AI InGaN layer and the AlGaN layer of 1 ~ 50nm successively,
Repeat 3 ~ 15 cycles, form low temperature AI InGaN/AlGaN quantum-well superlattice layer；
S7,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 100nm；
S8,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN coating layer of growth 20 ~ 80nm；
S9,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN contact layer of growth 5 ~ 20nm.
Correspondingly, the manufacture method of another AlInGaN base ultraviolet LED epitaxial structure, specifically include following steps:
S1 ', on substrate, outside stove, prepare cushion；
S2 ', on cushion plating SiO2And make figure, with Fluohydric acid., BOE or plasma by pattern spacing region
SiO2Etching is removed；
Remaining step is with aforementioned S3 ~ S9.
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment one:
AlInGaN base ultraviolet LED epitaxial structure in the present embodiment includes the most successively:
Substrate, this substrate is graphical sapphire substrate or plain film Sapphire Substrate.
SiO2Mask, arranges in Triangular array, the length of side 1 ~ 5 μm, is spaced 0.1 ~ 0.5 μm between equilateral triangle.
Cushion (540 DEG C, 300Torr under the conditions of grow), cushion is low temperature AI GaN layer, and this layer thickness is 30nm.
High temperature u-AlGaN layer (1120 DEG C, 50Torr under the conditions of grow), this layer thickness is 3 μm.
High temperature n-AlGaN layer (1100 DEG C, 50Torr under the conditions of grow), this layer thickness is 1.5 μm, and doping content is
8E18。
N-AlGaN roughened layer (900 DEG C, 500Torr under the conditions of grow), this layer thickness is 0.7 μm.
Low temperature AI InGaN/AlGaN ultra-violet light-emitting layer (980 DEG C, 100Torr under the conditions of grow).
High temperature p-AlGaN electronic barrier layer (950 DEG C, 100Torr under the conditions of grow), this layer thickness is 30nm.
High temperature p-AlGaN coating layer (980 DEG C, 100Torr under the conditions of grow), this layer thickness is 40nm.
High temperature p-GaN layer (880 DEG C, 100Torr under the conditions of grow), this layer thickness is 8nm.
Correspondingly, the manufacture method of the present embodiment AlInGaN base ultraviolet LED epitaxial structure, specifically include following steps:
S1, SiO will be made in advance2The Sapphire Substrate of figure is placed on the load plate in MOCVD reative cell, and at 1080 ~ 1100 DEG C
Under substrate is carried out high-temperature process 5 ~ 10 minutes；
S2,540 DEG C, under the conditions of 300Torr, the low temperature AI GaN cushion of epitaxial growth 30nm；
S3,1120 DEG C, under the conditions of 50Torr, grow the high temperature u-AlGaN layer of 3 μm；
S4,1100 DEG C, under the conditions of 50Torr, grow the high temperature n-AlGaN layer of 1.5 μm, doping content is 8E18；
S5,900 DEG C, under the conditions of 500Torr, grow the n-AlGaN roughened layer of 0.7 μm, doping content is 8E18；
S6,980 DEG C, under the conditions of 100Torr, grow low temperature AI InGaN layer and the AlGaN layer of 50nm successively, repeated for 10 week
Phase, form low temperature AI InGaN/AlGaN quantum-well superlattice layer；
S7,950 DEG C, under the conditions of 100Torr, the high temperature p-AlGaN electronic barrier layer of growth 30nm；
S8,980 DEG C, under the conditions of 100Torr, the high temperature p-AlGaN coating layer of growth 40nm；
S9,880 DEG C, under the conditions of 100Torr, the high temperature p-GaN contact layer of growth 8nm.
Embodiment two:
AlInGaN base ultraviolet LED epitaxial structure in the present embodiment includes the most successively:
Substrate, this substrate is graphical sapphire substrate or plain film Sapphire Substrate.
Cushion, uses sputtering method pregrown on substrate layer, and for AlN layer, this layer thickness is 20nm.
SiO2Mask, arranges in Triangular array, the length of side 1 ~ 5 μm, is spaced 0.1 ~ 0.5 μm between equilateral triangle.
High temperature u-AlGaN layer (1120 DEG C, 50Torr under the conditions of grow), this layer thickness is 3 μm.
High temperature n-AlGaN layer (1100 DEG C, 50Torr under the conditions of grow), this layer thickness is 1.5 μm, and doping content is
8E18。
N-AlGaN roughened layer (900 DEG C, 500Torr under the conditions of grow), this layer thickness is 0.7 μm.
Low temperature AI InGaN/AlGaN ultra-violet light-emitting layer (980 DEG C, 100Torr under the conditions of grow).
High temperature p-AlGaN electronic barrier layer (950 DEG C, 100Torr under the conditions of grow), this layer thickness is 30nm.
High temperature p-AlGaN coating layer (980 DEG C, 100Torr under the conditions of grow), this layer thickness is 40nm.
High temperature p-GaN layer (880 DEG C, 100Torr under the conditions of grow), this layer thickness is 8nm.
Correspondingly, the manufacture method of the present embodiment AlInGaN base ultraviolet LED epitaxial structure, specifically include following steps:
S1 ', in Sapphire Substrate use sputtering machine table prepare 20nm AlN cushion；
S2 ', on AlN cushion plating SiO2, at SiO2The upper making length of side is the equilateral triangle figure of 2 μm, between equilateral triangle
Away from for 0.5 μm, and with Fluohydric acid., BOE or plasma by this region SiO2Etching is removed, the oxidation on cleaning AlN cushion
Thing；
S3 ', 1120 DEG C, under the conditions of 50Torr, grow the high temperature u-AlGaN layer of 3 μm；
S4 ', 1100 DEG C, under the conditions of 50Torr, grow the high temperature n-AlGaN layer of 1.5 μm, doping content is 8E18；
S5 ', 900 DEG C, under the conditions of 500Torr, grow the n-AlGaN roughened layer of 0.7 μm, doping content is 8E18；
S6 ', 980 DEG C, under the conditions of 100Torr, grow low temperature AI InGaN layer and the AlGaN layer of 50nm successively, repeated for 10 week
Phase, form low temperature AI InGaN/AlGaN quantum-well superlattice layer；
S7 ', 950 DEG C, under the conditions of 100Torr, the high temperature p-AlGaN electronic barrier layer of growth 30nm；
S8 ', 980 DEG C, under the conditions of 100Torr, the high temperature p-AlGaN coating layer of growth 40nm；
S9 ', 880 DEG C, under the conditions of 100Torr, the high temperature p-GaN contact layer of growth 8nm.
Embodiment one compared with embodiment two, SiO2Figure exchanges with the formation order of cushion, correspondingly, and its manufacturer
Method is different, and the structure of remaining epitaxial layer is identical with thickness etc..
The present invention arranges SiO at substrate2Patterned mask, and add high temperature n-AlGaN roughened layer.In order to accelerate roughening face
Formation, insert in situ silane treatment, epitaxial layer forms pit-hole along AlGaN or AlN cushion (the intensive place of dislocation), thus
Realize roughening epitaxial growth.Wherein, high temperature u-AlGaN layer and high temperature n-AlGaN layer promote horizontal stroke by the regulation of temperature and pressure
To growth to cover SiO2, n-AlGaN roughened layer realizes by improving the brilliant pressure of outer prolongation and the outer crystalline substance temperature that extends of reduction, after
Continuous epitaxial layer continues the growth of this coarse surface, forms roughening V-type opening.The light of luminescent layer exports from this roughening V-type opening, carries
High light extraction efficiency.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of the spirit or essential attributes of the present invention, it is possible to realize the present invention in other specific forms.Therefore, no matter
From the point of view of which point, all should regard embodiment as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all by fall in the implication of equivalency and scope of claim
Change is included in the present invention.Should not be considered as limiting involved claim by any reference in claim.
Although moreover, it will be appreciated that this specification is been described by according to embodiment, but the most each embodiment only wraps
Containing an independent technical scheme, this narrating mode of description is only that for clarity sake those skilled in the art should
Description can also be formed those skilled in the art through appropriately combined as an entirety, the technical scheme in each embodiment
May be appreciated other embodiments.
Claims (10)
1. an AlInGaN base ultraviolet LED epitaxial structure, it is characterised in that described LED epitaxial structure includes successively:
Substrate；
High temperature u-AlGaN layer；
It is positioned at the high temperature n-AlGaN layer on described high temperature u-AlGaN layer；
It is positioned at the n-AlGaN roughened layer on described high temperature n-AlGaN layer；
It is positioned at the low temperature AI InGaN/AlGaN superlattice layer on described n-AlGaN roughened layer, described low temperature AI InGaN/AlGaN
Superlattice layer includes low temperature AI InGaN layer and the low temperature AI GaN layer that stacking arranges；
The high temperature p-AlGaN electronic barrier layer being positioned on described low temperature AI InGaN/AlGaN superlattice layer；
It is positioned at the high temperature p-AlGaN coating layer on described high temperature p-AlGaN electronic barrier layer；
It is positioned at the high temperature p-GaN contact layer on described high temperature p-AlGaN coating layer；
Wherein, between described substrate and high temperature u-AlGaN layer, SiO is set2Patterned mask and cushion.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 1, it is characterised in that described SiO2Graphically cover
Mould is Triangular array arrangement, arranges interval between adjacent described equilateral triangle.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 2, it is characterised in that the described equilateral triangle length of side
1~5μm。
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 2, it is characterised in that adjacent described positive triangle
0.1 ~ 0.5 μm it is spaced between shape.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 2, it is characterised in that described cushion is positioned at institute
State at the interval between adjacent equilateral triangle.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 2, it is characterised in that described SiO2Graphically cover
Mould is prepared on described cushion.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 1, it is characterised in that described cushion is
AlGaN or AlN cushion.
AlInGaN base ultraviolet LED epitaxial structure the most according to claim 1, it is characterised in that described AlInGaN/
AlGaN superlattice layer includes low temperature AI InGaN layer and the low temperature AI GaN layer of 3 ~ 15 cycle stackings settings.
9. the manufacture method of an AlInGaN base ultraviolet LED epitaxial structure, it is characterised in that said method comprising the steps of:
S1, SiO will be made in advance2The substrate of figure is placed on the load plate in MOCVD reative cell, and to substrate at 1080 ~ 1100 DEG C
Carry out high-temperature process 5 ~ 10 minutes；
S2,500 ~ 550 DEG C, under the conditions of 200 ~ 500Torr, the cushion of epitaxial growth 10 ~ 30nm；
S3,1080 ~ 1200 DEG C, under the conditions of 50 ~ 200Torr, the high temperature u-AlGaN layer of growth 2 ~ 4 μm；
S4,1080 ~ 1150 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-AlGaN layer of growth 1 ~ 2 μm, doping content is
5E18~1E19；
S5,900 ~ 1050 DEG C, under the conditions of 300 ~ 600Torr, the n-AlGaN roughened layer of growth 0.5 ~ 1 μm, doping content is
5E18~1E19；
S6,950 ~ 1100 DEG C, under the conditions of 200 ~ 300Torr, grow low temperature AI InGaN layer and the AlGaN layer of 1 ~ 50nm successively,
Repeat 3 ~ 15 cycles, form low temperature AI InGaN/AlGaN superlattice layer；
S7,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 100nm；
S8,950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN coating layer of growth 20 ~ 80nm；
S9,800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN contact layer of growth 5 ~ 20nm.
10. the manufacture method of an AlInGaN base ultraviolet LED epitaxial structure, it is characterised in that described method includes following step
Rapid:
S1 ', on substrate, outside stove, prepare cushion；
S2 ', on cushion plating SiO2And make figure, with Fluohydric acid., BOE or plasma by pattern spacing region
SiO2Etching is removed；
S3 ', 1080 ~ 1200 DEG C, under the conditions of 50 ~ 200Torr, the high temperature u-AlGaN layer of growth 2 ~ 4 μm；
S4 ', 1080 ~ 1150 DEG C, under the conditions of 100 ~ 200Torr, the high temperature n-AlGaN layer of growth 1 ~ 2 μm, doping content is
5E18~1E19；
S5 ', 900 ~ 1050 DEG C, under the conditions of 300 ~ 600Torr, the n-AlGaN roughened layer of growth 0.5 ~ 1 μm, doping content is
5E18~1E19；
S6 ', 950 ~ 1100 DEG C, under the conditions of 200 ~ 300Torr, grow low temperature AI InGaN layer and the AlGaN of 1 ~ 50nm successively
Layer, repeats 3 ~ 15 cycles, forms low temperature AI InGaN/AlGaN superlattice layer；
S7 ', 950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN electronic barrier layer of growth 30 ~ 100nm；
S8 ', 950 ~ 1100 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-AlGaN coating layer of growth 20 ~ 80nm；
S9 ', 800 ~ 1000 DEG C, under the conditions of 100 ~ 400Torr, the high temperature p-GaN contact layer of growth 5 ~ 20nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110459652A (en) * | 2018-05-08 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | AlGaN base uv-LED device and the preparation method and application thereof |
| CN113445130A (en) * | 2021-06-25 | 2021-09-28 | 中国科学院半导体研究所 | Growth method of AlGaN-based ultraviolet laser |
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| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| CN103460409A (en) * | 2011-09-29 | 2013-12-18 | 东芝技术中心有限公司 | P-type doping layers for use with light emitting devices |
| US20160141455A1 (en) * | 2014-11-14 | 2016-05-19 | Jin-young Lim | Light emitting device and method of manufacturing the same |
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| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| CN103460409A (en) * | 2011-09-29 | 2013-12-18 | 东芝技术中心有限公司 | P-type doping layers for use with light emitting devices |
| US20160141455A1 (en) * | 2014-11-14 | 2016-05-19 | Jin-young Lim | Light emitting device and method of manufacturing the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110459652A (en) * | 2018-05-08 | 2019-11-15 | 中国科学院宁波材料技术与工程研究所 | AlGaN base uv-LED device and the preparation method and application thereof |
| CN113445130A (en) * | 2021-06-25 | 2021-09-28 | 中国科学院半导体研究所 | Growth method of AlGaN-based ultraviolet laser |
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