CN106298829B - A kind of forming method of metal grate - Google Patents
A kind of forming method of metal grate Download PDFInfo
- Publication number
- CN106298829B CN106298829B CN201610979307.XA CN201610979307A CN106298829B CN 106298829 B CN106298829 B CN 106298829B CN 201610979307 A CN201610979307 A CN 201610979307A CN 106298829 B CN106298829 B CN 106298829B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- groove
- photodiode
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 86
- 239000002184 metal Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 39
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000005286 illumination Methods 0.000 claims abstract description 11
- 238000011049 filling Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000695 crystalline len Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- -1 ion Metal oxide Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
The present invention relates to technical field of semiconductors more particularly to a kind of forming methods of the metal grate applied to back side illumination image sensor part, comprising: step S1, forms an anti-reflecting layer, covers the layer on surface of metal, and fill the groove；Step S2, removal is located at the anti-reflecting layer of the corresponding pre-prepared zone position of photodiode；Step S3, the anti-reflecting layer surface of Yu Suoshu metal layer and the filling groove forms a photoresist layer；Step S4, the graphical photoresist layer；Step S5, graphically it is located at the metal layer of the prefabricated preparation area of the photodiode by the patterned photoresist layer, multiple metal grates is formed with the oxide layer surface at the prefabricated preparation area of the photodiode.The gully generated during production metal gasket is filled up by an anti-reflecting layer, then makes composite structure surface tend to be flat by etching the anti-reflecting layer, is convenient for subsequent metal grid processing procedure, simplification of flowsheet, save the cost.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to one kind to be applied to back-illuminated type (BSI) image sensing device
The forming method of metal grate.
Background technique
Back side illumination image sensor part just gradually substitutes previous imaging sensor front-illuminated due to its excellent performance
Part.Image sensing device structure front-illuminated is as shown in Figure 1, include crystalline lens 1, filter 2,3 silicon substrate 4 of metal layer, light is worn
Metal layer 3 is crossed to the image sensing device (such as photodiode) being located in silicon substrate 4, and back-illuminated type (BSI) image sensing
Device refers to using illuminating from the back side to sensing chip, that is, uses the senser element of backside illumination technology (BSI), can be higher
Effect ground captures light.
Pixel is constructed using BSI device, as shown in Fig. 2 back side illumination image sensor part structural schematic diagram, light is without wearing
Metal interconnecting layer 3 is crossed, when forming BSI image sensing device, image sensing device (such as photodiode) and logic electricity
Road is formed on the silicon substrate 4 of back side illumination image sensor part, is stimulated in response to light, the image in BSI image sensing device
Sensing chip generates electric signal.The size of electric signal (such as electric current) depends on the incident light that each image sensing device receives
Intensity.For reduce different images senser element received by light optical crosstalk, thus formed metal grate light is isolated,
But during making metal grate, during refering in particular to exposure development, because there are many production because of production gold in crystal column surface
The gully (trench) for belonging to pad and generating, can lead to the problem of crystal column surface photoresist (PR) is unevenly distributed, to will affect gold
Belong to the last structure of grid, influences product quality.
Currently, based on backside illumination technology (BSI) image sensing device although had been provided with the sub- efficiency of higher amount and
The characteristics such as lower noise, but exposure development and etching processing procedure in existing preparation process, in the formation of metal grate
It is difficult to control, generally requires to match by carrying out the multiple working procedures such as chemical mechanical grinding to back side illumination image sensor part surface
It closes, not only preparation process is cumbersome, and process costs are also relatively high.
Summary of the invention
In view of above-mentioned technical problem, the present invention is directed to propose one kind can overcome since crystal column surface has many production gold
The gully trench for belonging to pad and generating) caused by its surface PR (photoresist) the problem of being unevenly distributed metal grate formation side
Method.
The main technical schemes of present invention solution above-mentioned technical problem are as follows:
A kind of forming method of metal grate, applied to preparing back side illumination image sensor part a, wherein composite junction is provided
Structure, the composite construction include:
Silicon substrate, the silicon substrate include groove and the prefabricated preparation area of photodiode；
The bottom part down landfill of the groove has metal interconnection layer；
First medium layer covers the surface of the silicon substrate at the prefabricated preparation area of the photodiode；
Oxide skin(coating), covers the bottom and side wall of the groove, and covers the surface of the first medium layer；
Opening, also cross the silicon substrate of the bottom of the oxide skin(coating) and the groove in the groove, eventually
Terminate in the metal interconnection layer；
Second dielectric layer covers the side wall of the opening, and is located at the institute around the bottom portion of groove to the opening
State oxide skin(coating) extension；
Metal layer covers the oxide layer surface and the second dielectric layer, and fills the opening；
Metal gasket, the layer on surface of metal being formed in the groove；
The described method includes:
Step S1, an anti-reflecting layer is formed, covers the layer on surface of metal, and fill the groove；
Step S2, removal is located at the anti-reflecting layer of the corresponding pre-prepared zone position of photodiode；
Step S3, the anti-reflecting layer surface of Yu Suoshu metal layer and the filling groove forms a photoresist layer；
Step S4, the graphical photoresist layer；
Step S5, graphically it is located at the gold of the prefabricated preparation area of the photodiode by the patterned photoresist layer
Belong to layer, multiple metal grates is formed with the oxide layer surface at the prefabricated preparation area of the photodiode, and remove and fill out
Fill the anti-reflecting layer of the groove, and the metal layer of the removal recess sidewall.
Preferably, the metal gasket is formed by metallic aluminium.
Preferably, the metal layer is metallic aluminum.
Preferably, the anti-reflecting layer is organic antireflection layer.
Preferably, in the step S3, the photoresist layer is formed by photoresist spin coating.
Preferably, in the step S4, development is exposed to the photoresist layer with the graphical photoresist by light shield
Layer.
Preferably, in the step S2, the corresponding pre-prepared zone position of photodiode is located at by etching removal
The anti-reflecting layer.
Preferably, in the step S5, the gold of the prefabricated preparation area of the photodiode is located at by etched featuresization
Belong to layer, and remove the anti-reflecting layer for filling the groove, and the metal layer of the removal recess sidewall.
Preferably, the first medium layer is high dielectric radio material.
Preferably, the metal interconnection layer is copper interconnection layer.
Above-mentioned technical proposal have the following advantages that or the utility model has the advantages that
The present invention proposes a kind of forming method of metal grate, is filled up during production metal gasket and is produced by an anti-reflecting layer
Raw gully, then make composite structure surface tend to be flat by etching the anti-reflecting layer, it is convenient for subsequent metal grid processing procedure, letter
Change process flow, save the cost.
Detailed description of the invention
With reference to appended attached drawing, to be described more fully the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is image sensing device structural schematic diagram front-illuminated in the prior art；
Fig. 2 is back side illumination image sensor part structural schematic diagram in the prior art；
Fig. 3 is the structural schematic diagram of composite construction in a preferred embodiment of the invention；
Fig. 4 is metal grate forming method flow chart in a preferred embodiment of the invention；
Fig. 5-8 is the corresponding structural schematic diagram of metal grate forming method step in a preferred embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.When
So other than these detailed descriptions, the present invention can also have other embodiments.
The present invention proposes a kind of forming method of metal grate, can overcome since crystal column surface has many production metals
The problem of caused its surface PR (photoresist) in gully (trench) for padding and generating is unevenly distributed.
The present invention will be further explained below with reference to the attached drawings and specific examples, it is clear that described example is only
A part of example of the present invention, rather than whole examples.Based on the example that the present invention summarizes, those of ordinary skill in the art are not having
All examples obtained under the premise of creative work are made, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in example and example in the present invention can mutually certainly
By combining.
Fig. 3 is the structural schematic diagram of composite construction in a preferred embodiment of the invention, as shown, being applied to preparation
Back side illumination image sensor part provides a composite construction A in a preferred embodiment, and composite construction A includes:
Silicon substrate 4, silicon substrate 4 include the groove B and prefabricated preparation area C of photodiode；
The bottom part down landfill of groove B has metal interconnection layer 5；
First medium layer 6 covers the surface of the silicon substrate 4 of C at the prefabricated preparation area of photodiode；
Oxide skin(coating) 7, covers the bottom and side wall of groove B, and covers the surface of first medium layer 6；
Opening D terminates at metal interconnection also cross the silicon substrate 4 of the bottom of oxide skin(coating) 7 and groove B in groove B
Layer 5；
Second dielectric layer 8, the side wall of covering opening D, and be located at the oxide skin(coating) 7 around the bottom groove B to opening D and prolong
It stretches；
Metal layer 9 covers 7 surface of oxide skin(coating) and second dielectric layer 8, and fills opening D；
Metal gasket 10 is formed in 9 surface of metal layer in groove B；
Fig. 4 is metal grate forming method flow chart in a preferred embodiment of the invention, and Fig. 5-8 is the present invention one
The corresponding structural schematic diagram of metal grate forming method step in preferred embodiment, as shown, a kind of shape of metal grate
Include: at method
Step S1, an anti-reflecting layer 11 is formed, covers 9 surface of metal layer, and fill groove B, as shown in Figure 5；
Step S2, removal is located at the anti-reflecting layer 11 of the corresponding prefabricated preparation area location of C of photodiode as shown in Figure 6；
Step S3, a photoresist layer 12 is formed in 11 surface of anti-reflecting layer of metal layer 9 and filling groove B, as shown in Figure 7；
Step S4, graphical photoresist layer 12；
Step S5, graphically it is located at the metal layer 9 of the prefabricated preparation area C of photodiode by patterned photoresist layer 12, with
7 surface of oxide skin(coating) at the prefabricated preparation area C of photodiode forms multiple metal grates, and removes the anti-reflective of filling groove B
Layer 11, and the metal layer 9 of removal groove B side wall are penetrated, as shown in Figure 8.
Above-mentioned technical proposal fills up production metal by forming an anti-reflecting layer 11 in the surface composite construction A and groove B
The gully generated during pad 10, then make the surface composite construction A tend to be flat by etching the anti-reflecting layer 11, in this way, in
After 9 surface of metal layer of composite construction A covers one layer of photoresist layer 12, since anti-reflecting layer 11 fills up production 10 process of metal gasket
The gully of middle generation, the photoresist layer 12 covering surface composite construction A also tend to be flat, and photoresist layer 12 is evenly distributed, convenient for subsequent
Metal grate processing procedure, simplification of flowsheet, save the cost are photoresist as the above-mentioned photoresist layer of preferred embodiment.
In a preferred embodiment, metal gasket 10 can be formed by metallic aluminium.
In a preferred embodiment, metal layer 9 is metallic aluminum.
Above-mentioned technical proposal, metal layer 9 and metal gasket 10 are all metallic aluminum material, can also be according to different needs for not
Same material.
In a preferred embodiment, anti-reflecting layer 11 is organic antireflection layer 11.
Above-mentioned technical proposal, organic antireflection layer 11 are a kind of membrane systems based on organic polymer, are combined similar
The coating performance of photoresist, and with the characteristic of planarization, can be good at playing fill up production metal gasket 10 during it is compound
The effect in the gully that 9 surface of metal layer of structure generates, so that 9 surface of metal layer tends to be flat, and organic antireflection layer 11
Formation process is simple, using the board for implementing photoresist technique it is achieved that and good compatibility with photoresist, the defect of generation
It is few.
In a preferred embodiment, in step S3, photoresist layer 12 is formed by photoresist spin coating.
In a preferred embodiment, in step S4, development is exposed to photoresist layer 12 with graphical by light shield
Photoresist layer 12.
In a preferred embodiment, in step S2, the corresponding prefabricated preparation area C of photodiode is located at by etching removal
The anti-reflecting layer 11 of position retains the anti-reflecting layer 11 being filled in groove, the metal layer 9 of the pre-prepared zone position of photodiode
Surface tends to be flat, convenient for the formation of subsequent photoresist layer 12.
In a preferred embodiment, in step S5, it is prefabricated that photodiode is graphically located at by way of etching
The metal layer 9 of preparation area C, and the anti-reflecting layer 11 of filling groove B is removed, and the metal layer 9 of removal groove B side wall.
Above-mentioned technical proposal, anti-reflecting layer 11 be organic material, can by etching technics remove anti-reflecting layer 11, etching with
The graphical metal layer 9 positioned at the prefabricated preparation area C of photodiode is technological means well known in the art, therefore is repeated no more.
In a preferred embodiment, first medium layer 6 can be high dielectric radio material, and high dielectric material is mostly ion
Metal oxide.
In a preferred embodiment, metal interconnection layer 5 can be copper interconnection layer.
In conclusion the present invention proposes a kind of forming method of metal grate, production metal is filled up by an anti-reflecting layer
The gully generated during pad, then make composite structure surface tend to be flat by etching the anti-reflecting layer, it is convenient for subsequent metal
Grid processing procedure, simplification of flowsheet, save the cost.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, devices and structures not described in detail herein should be understood as gives reality with the common mode in this field
It applies；Anyone skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above
Methods and technical content many possible changes and modifications are made to technical solution of the present invention, or be revised as equivalent variations etc.
Embodiment is imitated, this is not affected the essence of the present invention.Therefore, anything that does not depart from the technical scheme of the invention, foundation
Technical spirit of the invention any simple modification, equivalent variations and modification made to the above embodiment, still fall within this hair
In the range of bright technical solution protection.
Claims (10)
1. a kind of forming method of metal grate, applied to preparing back side illumination image sensor part, which is characterized in that it is multiple to provide one
Structure is closed, the composite construction includes:
Silicon substrate, the silicon substrate include groove and the prefabricated preparation area of photodiode；
The bottom part down landfill of the groove has metal interconnection layer；
First medium layer covers the surface of the silicon substrate at the prefabricated preparation area of the photodiode；
Oxide skin(coating), covers the bottom and side wall of the groove, and covers the surface of the first medium layer；
Opening, also cross the silicon substrate of the bottom of the oxide skin(coating) and the groove in the groove, terminates at
The metal interconnection layer；
Second dielectric layer covers the side wall of the opening, and is located at the oxygen around the bottom portion of groove to the opening
Compound layer extends；
Metal layer covers the oxide layer surface and the second dielectric layer, and fills the opening；
Metal gasket, the layer on surface of metal being formed in the groove；
The described method includes:
Step S1, an anti-reflecting layer is formed, covers the layer on surface of metal, and fill the groove；
Step S2, removal is located at the anti-reflecting layer of the corresponding pre-prepared zone position of photodiode；
Step S3, the anti-reflecting layer surface of Yu Suoshu metal layer and the filling groove forms a photoresist layer；
Step S4, the graphical photoresist layer；
Step S5, graphically it is located at the metal of the prefabricated preparation area of the photodiode by the patterned photoresist layer
Layer, forms multiple metal grates with the oxide layer surface at the prefabricated preparation area of the photodiode, and remove filling
The anti-reflecting layer of the groove, and the metal layer of the removal recess sidewall.
2. forming method as described in claim 1, which is characterized in that the metal gasket is formed by metallic aluminium.
3. forming method as described in claim 1, which is characterized in that the metal layer is metallic aluminum.
4. forming method as described in claim 1, which is characterized in that the anti-reflecting layer is organic antireflection layer.
5. forming method as described in claim 1, which is characterized in that in the step S3, formed by photoresist spin coating described
Photoresist layer.
6. forming method as described in claim 1, which is characterized in that in the step S4, by light shield to the photoresist layer
Development is exposed with the graphical photoresist layer.
7. forming method as described in claim 1, which is characterized in that in the step S2, be located at by etching removal and corresponded to
The anti-reflecting layer of the pre-prepared zone position of photodiode.
8. forming method as described in claim 1, which is characterized in that in the step S5, be located at institute by etched featuresization
The metal layer of the prefabricated preparation area of photodiode is stated, and removes the anti-reflecting layer for filling the groove, and removal institute
State the metal layer of recess sidewall.
9. forming method as described in claim 1, which is characterized in that the first medium layer is high dielectric radio material.
10. forming method as described in claim 1, which is characterized in that the metal interconnection layer is copper interconnection layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610979307.XA CN106298829B (en) | 2016-11-08 | 2016-11-08 | A kind of forming method of metal grate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610979307.XA CN106298829B (en) | 2016-11-08 | 2016-11-08 | A kind of forming method of metal grate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298829A CN106298829A (en) | 2017-01-04 |
| CN106298829B true CN106298829B (en) | 2019-05-03 |
Family
ID=57721248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610979307.XA Active CN106298829B (en) | 2016-11-08 | 2016-11-08 | A kind of forming method of metal grate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106298829B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346673B (en) * | 2017-01-23 | 2021-11-12 | 中芯国际集成电路制造(上海)有限公司 | Backside-illuminated image sensor, manufacturing method thereof and electronic device |
| CN109065562B (en) * | 2018-09-19 | 2021-03-19 | 豪威科技(上海)有限公司 | Backside illuminated CMOS image sensor and manufacturing method thereof |
| CN109860216A (en) * | 2019-02-27 | 2019-06-07 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN112397541B (en) * | 2020-11-16 | 2024-03-08 | 武汉新芯集成电路制造有限公司 | Method for manufacturing back-illuminated image sensor |
| CN113629088B (en) * | 2021-08-06 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | Method for manufacturing metal grid, backside-illuminated image sensor and method for manufacturing backside-illuminated image sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811504A (en) * | 2012-11-01 | 2014-05-21 | 台湾积体电路制造股份有限公司 | HfO2/SiO2-Si interface improvement for CMOS image sensor |
| US8736006B1 (en) * | 2013-03-14 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside structure for a BSI image sensor device |
| CN103972257A (en) * | 2014-05-29 | 2014-08-06 | 豪威科技(上海)有限公司 | Stack type image sensor manufacturing method |
| CN104362162A (en) * | 2014-09-30 | 2015-02-18 | 武汉新芯集成电路制造有限公司 | Image sensor with landfill type color filter and manufacture method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9818776B2 (en) * | 2015-04-08 | 2017-11-14 | Semiconductor Components Industries, Llc | Integrating bond pad structures with light shielding structures on an image sensor |
| CN105720190A (en) * | 2016-02-16 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | 3D AMR groove filling technique |
-
2016
- 2016-11-08 CN CN201610979307.XA patent/CN106298829B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811504A (en) * | 2012-11-01 | 2014-05-21 | 台湾积体电路制造股份有限公司 | HfO2/SiO2-Si interface improvement for CMOS image sensor |
| US8736006B1 (en) * | 2013-03-14 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside structure for a BSI image sensor device |
| CN103972257A (en) * | 2014-05-29 | 2014-08-06 | 豪威科技(上海)有限公司 | Stack type image sensor manufacturing method |
| CN104362162A (en) * | 2014-09-30 | 2015-02-18 | 武汉新芯集成电路制造有限公司 | Image sensor with landfill type color filter and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106298829A (en) | 2017-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106298829B (en) | A kind of forming method of metal grate | |
| US11522004B2 (en) | Absorption enhancement structure for image sensor | |
| CN108292665B (en) | Solid-state image pickup element, image pickup apparatus, and method of manufacturing solid-state image pickup element | |
| CN105518875B (en) | Photoelectric conversion device and its manufacture method | |
| CN105319621B (en) | Two-lens structure and its manufacture method | |
| CN101978498B (en) | Backside illuminated image sensor having deep light reflective trenches | |
| CN105489623B (en) | The method of imaging sensor, imaging system and imaging sensor production | |
| CN103579267A (en) | Image sensor having metal grid with triangular cross-section | |
| CN103972257B (en) | Preparation method of stacked image sensor | |
| CN104616997A (en) | Manufacturing method of backside image sensor | |
| CN108257998A (en) | CMOS image sensor and its manufacturing method | |
| CN103066084B (en) | A kind of cmos image sensor and its manufacture method | |
| JP2008160114A (en) | Method of manufacturing image sensor | |
| CN106505029B (en) | Fleet plough groove isolation structure and forming method thereof, cmos image sensor | |
| CN105702695A (en) | A manufacturing method for a backside-illumination sensor | |
| CN109585481B (en) | Image sensor structure and preparation method thereof | |
| CN104362161A (en) | Production process of image sensor | |
| US9455297B2 (en) | Preparation process of image sensors | |
| CN109065564B (en) | Image sensor and forming method thereof | |
| CN106549030A (en) | A kind of imageing sensor and preparation method thereof | |
| CN102903725B (en) | A kind of cmos image sensor and its manufacture method | |
| TWI760010B (en) | Image sensor, optical structure and methods of forming the same | |
| KR100840646B1 (en) | Method of manufacturing cmos image sensor | |
| CN108257883B (en) | Metal wire draws process structure and preparation method thereof and back side illumination image sensor | |
| US10586825B2 (en) | Self-alignment of a pad and ground in an image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |