CN109585481B - Image sensor structure and preparation method thereof - Google Patents
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- CN109585481B CN109585481B CN201811462570.7A CN201811462570A CN109585481B CN 109585481 B CN109585481 B CN 109585481B CN 201811462570 A CN201811462570 A CN 201811462570A CN 109585481 B CN109585481 B CN 109585481B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000002955 isolation Methods 0.000 claims abstract description 177
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000007789 sealing Methods 0.000 claims abstract description 72
- 238000001914 filtration Methods 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 76
- 230000008569 process Effects 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 230000004888 barrier function Effects 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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Abstract
The invention provides an image sensor structure and a preparation method thereof, wherein the preparation method comprises the following steps: providing a substrate structure; forming an insulating layer on the substrate structure; forming a plurality of isolation groove structures which are arranged at intervals in the insulating layer; forming a sealing layer on the insulating layer with the isolation groove structure, wherein the sealing layer at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and forming a light filtering structure at least in the insulating layer between the adjacent air cavities. According to the image sensor structure and the manufacturing method thereof, the air cavity structure is formed between the light filtering structures, so that incident light can enter the light thinning medium from the optical dense medium, total reflection is formed at the interface, interference of light received between the light filtering structures is effectively improved, crosstalk of the sensor can be effectively reduced, and quantum efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an image sensor structure and a preparation method thereof.
Background
A CMOS Image Sensor (CIS) is widely used in many fields, for example, in digital cameras and other electro-optical devices, because of its advantages of good performance, low power consumption, high integration level, and the like.
However, as the technology is developed, the size of the sensor is gradually reduced, the quantum efficiency is reduced, and the crosstalk noise is increased, in the prior art, the sensor crosstalk is reduced through the absorption of the metal grid to light, but the size of the structure cannot be too small, so that how to effectively reduce the sensor crosstalk becomes a great technical problem.
Therefore, it is necessary to provide an image sensor structure and a method for manufacturing the same to solve the above-mentioned problems in the prior art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide an image sensor structure and a method for manufacturing the same, which are used to solve the problems of the prior art that it is difficult to effectively improve the sensor crosstalk.
To achieve the above and other related objects, the present invention provides a method for manufacturing an image sensor structure, comprising the steps of:
providing a substrate structure;
forming an insulating layer on the substrate structure;
forming a plurality of isolation groove structures which are arranged at intervals in the insulating layer;
forming a sealing layer on the insulating layer with the isolation groove structure, wherein the sealing layer at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and
and forming a light filtering structure at least in the insulating layer between the adjacent air cavities.
As an alternative of the present invention, the base structure sequentially includes a supporting substrate, a metal interconnection layer, and a photosensitive layer from bottom to top or the base structure sequentially includes a substrate, a photosensitive layer, and a metal interconnection layer from bottom to top.
As an alternative of the present invention, the photosensitive layer includes a plurality of photosensitive regions and an isolation region for isolating adjacent photosensitive regions, wherein the formed isolation trench structure is disposed corresponding to the isolation region up and down.
As an alternative of the present invention, before forming the insulating layer, the method further comprises the steps of: forming a high dielectric constant dielectric layer on the substrate structure; the method also comprises the following steps after the filtering structure is formed: and preparing a lens structure on each filtering structure, wherein the filtering structures extend upwards into the sealing layer and are flush with the upper surface of the sealing layer, and the lens structures and the filtering structures are arranged up and down correspondingly and extend to cover the sealing layer around the corresponding filtering structures.
As an alternative of the present invention, before forming the insulating layer, the method further comprises the steps of: and forming an anti-reflection barrier layer on the substrate structure, wherein the formed isolation groove structure penetrates through the insulating layer and exposes the anti-reflection barrier layer.
As an alternative of the invention, the forming process of the insulating layer comprises an atomic layer deposition process, the insulating layer comprises a silicon oxide layer, and the thickness of the insulating layer is between 2950 angstroms and 3350 angstroms; the forming process of the isolation groove structure comprises a dry etching process, the depth of the isolation groove structure is between 2950 angstroms and 3350 angstroms, and the width of the isolation groove structure is between 190nm and 230 nm.
As an alternative of the present invention, the process of forming the sealing layer includes a deposition process; the deposition process comprises an atmospheric pressure chemical vapor deposition process; the sealing layer comprises an ethyl orthosilicate layer, and the thickness of the sealing layer is between 2800 angstroms and 3200 angstroms.
As an alternative of the present invention, before forming the sealing layer, the method further comprises the steps of: at least the bottom and sidewalls of the isolation trench structure are formed with a capping layer.
As an alternative of the invention, the thickness of the covering layer is between 1/10 and 1/3 of the width of the isolation groove structure; the width of the residual isolation groove structure after the covering layer is formed is between 80nm and 120 nm; the forming process of the covering layer comprises a chemical vapor deposition process, the covering layer comprises a silicon nitride layer, and the thickness of the covering layer is between 300 and 700 angstroms.
The present invention also provides an image sensor structure comprising:
a base structure;
the insulating layer is positioned on the substrate structure, and a plurality of isolation groove structures which are arranged at intervals are formed in the insulating layer;
the sealing layer is correspondingly positioned on the isolation groove structure and at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and
and the light filtering structure is at least positioned in the insulating layer between the adjacent air cavities.
As an alternative of the present invention, the base structure sequentially includes a supporting substrate, a metal interconnection layer, and a photosensitive layer from bottom to top or the base structure sequentially includes a substrate, a photosensitive layer, and a metal interconnection layer from bottom to top.
As an alternative of the present invention, the photosensitive layer includes a plurality of photosensitive regions and an isolation region for isolating adjacent photosensitive regions, wherein the isolation groove structure and the isolation region are disposed in an up-down corresponding manner.
As an alternative of the present invention, the image sensor structure further comprises a high dielectric constant dielectric layer located between the base structure and the insulating layer; the image sensor structure further comprises a lens structure, wherein the filtering structures extend upwards to the sealing layer and are flush with the upper surface of the sealing layer, and the lens structure and each filtering structure are correspondingly arranged up and down and extend to cover the sealing layer around the corresponding filtering structure.
As an alternative of the present invention, the image sensor structure further includes an anti-reflection blocking layer, the anti-reflection blocking layer is located between the base structure and the insulating layer, and the isolation trench structure penetrates through the insulating layer and exposes the anti-reflection blocking layer.
As an alternative of the invention, the insulating layer comprises a silicon oxide layer, and the thickness of the insulating layer is between 2950 angstroms and 3350 angstroms; the depth of the isolation groove structure is between 2950 angstroms and 3350 angstroms, and the width of the isolation groove structure is between 190nm and 230 nm; the sealing layer comprises an ethyl orthosilicate layer, and the thickness of the sealing layer is between 2800 angstroms and 3200 angstroms.
As an alternative of the present invention, the image sensor further includes a cover layer at least at the bottom and the sidewalls of the isolation trench structure.
As an alternative of the invention, the thickness of the covering layer is between 1/10 and 1/3 of the width of the isolation groove structure; the width of the residual isolation groove structure after the covering layer is formed is between 80nm and 120 nm; the capping layer comprises a silicon nitride layer, and the capping layer has a thickness between 300 angstroms and 700 angstroms.
As described above, according to the image sensor structure and the manufacturing method thereof of the present invention, the air cavity structure is formed between the filtering structures, so that incident light can enter the optically thinner medium from the optically denser medium, thereby forming total reflection at the interface, and further effectively improving interference of light received between the mutually filtering structures, thereby effectively reducing crosstalk of the sensor and improving quantum efficiency.
Drawings
Fig. 1 shows a flow chart of a manufacturing process of the image sensor structure provided by the present invention.
Fig. 2 shows a schematic diagram of providing a substrate structure in the fabrication of an image sensor structure according to the present invention.
FIG. 3 is a schematic diagram of a structure for forming an anti-reflective barrier layer in the fabrication of an image sensor structure according to the present invention.
FIG. 4 is a schematic diagram illustrating the formation of an insulating layer in the fabrication of an image sensor structure according to the present invention.
Fig. 5 is a schematic structural diagram illustrating the formation of an isolation trench structure in the fabrication of an image sensor structure according to the present invention.
Fig. 6 is a schematic top view illustrating the formation of an isolation trench structure in the fabrication of an image sensor structure according to the present invention.
FIG. 7 is a schematic diagram of a capping layer formation process in the fabrication of an image sensor structure according to the present invention.
FIG. 8 is a schematic diagram illustrating a structure of forming a capping layer in the fabrication of an image sensor structure according to the present invention.
FIG. 9 is a schematic diagram of a stage of the process of forming a capping layer in the fabrication of an image sensor structure according to the present invention.
FIG. 10 is a schematic diagram illustrating another stage of the process of forming the capping layer in the fabrication of the image sensor structure according to the present invention.
FIG. 11 is a schematic diagram illustrating a further stage of the process of forming the capping layer in the fabrication of the image sensor structure of the present invention.
Fig. 12 is a schematic structural diagram illustrating the formation of a filtering structure in the fabrication of an image sensor structure according to the present invention.
Fig. 13 is a schematic diagram illustrating the crosstalk improvement effect of the image sensor structure according to the present invention.
FIG. 14 is a schematic diagram of a lens structure formed in the fabrication of an image sensor structure according to the present invention.
Fig. 15 shows a schematic diagram of an example of a substrate structure provided in the fabrication of an image sensor structure of the present invention.
Description of the element reference numerals
100 substrate structure
101 insulating layer
102 anti-reflective barrier layer
103 isolation trench structure
104 cover layer
105 sealing layer
105a initially deposited layer
105b seal deposit layer
106 air cavity
107 filtering structure
108 lens structure
109 support substrate
110 bonding layer
111 metal interconnection layer
111a metal interconnection structure
111b dielectric layer
112 isolation region
112a deep trench isolation structure
112b shallow trench isolation structure
113 photosensitive region
114 photosensitive layer
115 high dielectric constant dielectric layer
S1-S5
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 15. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 1 to 15, the present invention provides a method for manufacturing an image sensor structure, comprising the steps of:
providing a substrate structure;
forming an insulating layer on the substrate structure;
forming a plurality of isolation groove structures which are arranged at intervals in the insulating layer;
forming a sealing layer on the insulating layer with the isolation groove structure, wherein the sealing layer at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and
and forming a light filtering structure at least in the insulating layer between the adjacent air cavities.
The method for manufacturing the image sensor structure of the present invention will be described in detail below with reference to the accompanying drawings.
First, as shown in S1 in fig. 1 and fig. 2 and 15, a substrate structure 100 is provided.
As an example, the base structure 100 includes a supporting substrate 109, a metal interconnection layer 111, and a photosensitive layer 114 in order from bottom to top or the base structure includes a substrate, a photosensitive layer, and a metal interconnection layer in order from bottom to top.
Specifically, the substrate structure 100 may be any substrate structure in an image sensor, and a structure such as an optical filter may be fabricated on the substrate structure to complete the fabrication of the image sensor. In an example, referring to fig. 15, an example of the base structure 100 is provided, where the base structure 100 includes, in order from bottom to top: a supporting substrate 109, a metal interconnection layer 111, and a photosensitive layer 114, so as to form a back-illuminated image sensor, wherein the supporting substrate 109 may be a supporting wafer, including but not limited to a silicon substrate, such as a bare silicon wafer, but of course, in other examples, the supporting substrate 109 may be replaced by any one of a ceramic supporting substrate, a gallium nitride supporting substrate, or a glass supporting substrate, etc., which can serve as a support. Of course, a front-illuminated image sensor may also be formed based on the base structure 100, that is, the base structure 100 includes, from bottom to top, a substrate, a photosensitive layer, and a metal interconnection layer (not shown), wherein the substrate includes, but is not limited to, a silicon substrate. In addition, the above-described base structure may be prepared using techniques well known in the art.
As an example, the photosensitive layer 114 includes a plurality of photosensitive regions 113 and an isolation region 112 isolating adjacent photosensitive regions 113.
Specifically, in one example, the photosensitive layer 114 of the substrate structure 100 is shown in fig. 15, and includes a photosensitive region 113, wherein, a Photodiode (Photodiode) may be formed in the photosensitive region 113 for converting a received external optical signal into an excitation electrical signal and an image output signal, in addition, the photosensitive regions 113 may be isolated by isolation regions 112, and in one example, each isolation region 112 is formed of two parts, namely, a Deep Trench Isolation (DTI) 112a and a Shallow Trench Isolation (STI)112b, which are disposed in an example up and down corresponding to each other to isolate the photosensitive region 113, in an example, the deep trench isolation structure 112a may be, but is not limited to being, filled with silicon oxide, and the shallow trench isolation structure 112b may be, but is not limited to being, filled with silicon oxide.
In addition, in an example, the Metal interconnection layer 111 includes Metal interconnection structures (BEOL Metal)111a and dielectric layers (BEOL IMD)111b located between the Metal interconnection structures, the Metal interconnection structures 111a are located in the dielectric layers 111b, the dielectric layers 111b are used for insulating and isolating the Metal interconnection structures 111a, and in addition, the Metal interconnection layer 111 is electrically connected with the photosensitive layer 114, such as in a back-illuminated image sensor, the photodiode is used for converting a received external optical signal into an excitation electrical signal and an image output signal and outputting the excitation electrical signal and the image output signal through the Metal interconnection layer 111.
Specifically, in an example, a Bonding layer (Bonding interface)110 is further formed between the supporting substrate 109 and the photosensitive layer 114 of the upper layer or between the supporting substrate 109 and the metal interconnection layer 111 of the upper layer, in an example, the Bonding layer 110 may be a Bonding layer, which bonds the supporting substrate 109 and the device structure layer above, and may use any Bonding process, and the material of the Bonding layer 110 includes, but is not limited to, an oxide.
In an example, referring to the structure shown in fig. 15, a manufacturing process of the base structure 100 is provided, but the manufacturing process is not limited to this, for example, to manufacture a backside illuminated image sensor, first, a device wafer is provided, Shallow Trench Isolation (STI)112b is manufactured in the wafer, and required ion implantation (PD) is performed on the device wafer to form the photosensitive layer 114 and other device layers, then, the metal interconnection layer 111 is manufactured on the device wafer, a metal interconnection structure 111a and a dielectric layer 111b are manufactured in the metal interconnection layer 111, then, the supporting substrate 109 is bonded to the metal interconnection layer 111 through the bonding layer 110, the manufactured structure is turned over, and the device wafer is thinned after turning over (thining), that is, the side of the photosensitive layer 114 away from the metal interconnection layer 111 is thinned, the thinning may be performed by a mechanical grinding process, and of course, a wet etching process may also be employed, or the mechanical grinding process is first employed to perform the primary thinning on the device wafer, then the wet etching process is employed to perform the secondary thinning on the device wafer, and after the thinning, a BDTI (back Deep Trench Isolation) process is performed to form the Deep Trench Isolation structure 112 a.
In addition, in an alternative example, a high-k dielectric layer 115 may be formed on the photosensitive layer 114 after the above process, so as to confine electrons in the isolation region and reduce dark current, a chemical vapor process may be used, which may be HfO, and the thickness of the high-k dielectric layer 115 is between 60 angstroms and 70 angstroms.
Next, as shown in S2 in fig. 1 and fig. 3-4, an insulating layer 101 is formed on the substrate structure 100;
specifically, an insulating layer (Dielectric)101 is formed on the substrate structure 100, and then structures such as an isolation trench structure are formed on the insulating layer 101, so as to perform the subsequent device fabrication. In an example, the insulating layer 101 may be a silicon oxide layer, but is not limited thereto, and the forming process may be a chemical vapor deposition (cvd) process, preferably, an Atomic Layer Deposition (ALD) process is selected to effectively match a subsequent process, so as to improve surface variability of the prepared device and facilitate surface uniformity, and in addition, the thickness d1 of the insulating layer 101 is between 2950 a and 3350 a, such as 3000 a, 31000 a, and the like.
Continuing, as shown in S3 in fig. 1 and fig. 5-6, forming a plurality of isolation trench structures 103 arranged at intervals in the insulating layer 101;
as an example, before forming the insulating layer 101, the method further includes: an anti-reflective barrier layer 102 is formed on the substrate structure 100, and the isolation trench structure 103 is formed to penetrate through the insulating layer 101 and expose the anti-reflective barrier layer 102.
Specifically, in this step, an isolation trench structure 103 is formed in the insulating layer 101, so that a subsequent air cavity may be formed in the isolation trench structure 103, wherein the formation process of the isolation trench structure 103 may employ a dry etching process, but is not limited thereto, and in an example, the depth d2 of the isolation trench structure 103 is between 2950 angstroms and 3350 angstroms, such as 3000 angstroms, 31000 angstroms, and the like, preferably, the depth of the isolation trench structure 103 is consistent with the thickness of the insulating layer 101, the width w1 of the isolation trench structure 103 is between 190nm and 230nm, preferably between 200nm and 220nm, and in this example, the width of the isolation trench structure 103 is selected to be 210 nm.
In addition, in an optional example, before forming the insulating layer 101, a step of forming an anti-reflection barrier layer 102 on the substrate structure 100 is further included, as shown in fig. 3, in an example, the isolation trench structure 103 is formed to penetrate through the insulating layer 101 and expose the anti-reflection barrier layer 102, wherein a material of the anti-reflection barrier layer 102 includes, but is not limited to, silicon nitride, and the anti-reflection barrier layer 102 may function as an anti-reflection layer (ARC), and may also function as an etching barrier layer for forming the isolation trench structure 103, so as to ensure that sidewalls and the like of the isolation trench structure 103 have good etching uniformity during etching, and a thickness thereof may be set according to actual requirements. In addition, when a high-k dielectric layer 115 is further formed in the substrate structure 100, the anti-reflection blocking layer 102 is formed on the high-k dielectric layer 115.
As an example, when the photosensitive layer 114 includes a plurality of photosensitive regions 113 and an isolation region 112 for isolating adjacent photosensitive regions 113, the isolation trench structures 103 are formed to be disposed above and below the isolation region 112.
Specifically, in an example, the position of the isolation groove structure 103 corresponds to the isolation region 112 in the photosensitive layer 114 from top to bottom, so that a subsequently formed filtering structure corresponds to the photosensitive region 113 of the photosensitive layer from top to bottom, and light passing through the filtering structure can effectively enter the photosensitive region, thereby improving the device efficiency.
As shown in fig. 7, as an example, after forming the isolation trench structure 103, before forming the capping layer subsequently, the method further includes the steps of: at least the bottom and sidewalls of the isolation trench structure 103 are formed with a capping layer 104.
Illustratively, the thickness of the capping layer 104 is between 1/10-1/3 of the width of the isolation trench structure 103.
As an example, the width of the isolation trench structure remaining after forming the capping layer 104 is between 80nm and 120nm
As an example, the formation process of the capping layer 104 includes a chemical vapor deposition process, the capping layer includes a silicon nitride layer, and the thickness of the capping layer 104 is between 300 angstroms and 700 angstroms.
Specifically, the formation of the capping layer 104 may modify the size of the isolation trench structure 103 after the formation of the isolation trench structure 103, for example, further reduce the size of the isolation trench structure, so that the subsequent formation of the air cavity is easier to seal, and in addition, the formation of the capping layer 104 may also prevent the formed air cavity from being damaged in the subsequent etching (Color Filter trench) process for forming the optical Filter structure, so as to form lateral protection. In addition, the material of the capping layer 104 includes, but is not limited to, silicon nitride, the material of the capping layer 104 is preferably the same as the material of the anti-reflection barrier layer 102, and the formation process thereof may adopt a chemical vapor deposition process, which may be selected according to the actual process. In addition, in an example, the capping layer 104 is a continuous material layer, is located at the bottom and the sidewall of the isolation trench structure 103, and extends to cover the insulating layer 101 around the isolation trench structure 103, as shown in fig. 7.
In addition, in an example, the thickness d3 of the cap layer 104 is controlled to be between 1/10 and 1/3 of the width of the isolation trench structure 103, so as to ensure that the air cavity is effectively formed in the space of the remaining isolation trench structure, in an example, the thickness of the cap layer 104 is between 300 and 700 angstroms, and may be selected to be 400 and 500 angstroms, and after the cap layer 104 is formed, the width w2 of the remaining isolation trench structure, that is, the dimension of the width of the isolation trench structure 103 minus the thicknesses of two cap layers 104, is between 80 and 120nm, and may be selected to be 100nm and 110 nm.
Next, as shown in S4 of fig. 1 and fig. 8-11, a sealing layer 105 is formed on the insulating layer 101 on which the isolation trench structure 103 is formed, wherein the sealing layer 105 at least seals the opening of the isolation trench structure 103 so as to form an air cavity 106 in the isolation trench structure 103.
As an example, the process of forming the capping layer 105 includes a deposition process including atmospheric pressure chemical vapor deposition.
By way of example, the sealing layer 105 comprises an ethyl orthosilicate layer, and the thickness of the sealing layer 105 is between 2800 angstroms and 3200 angstroms.
Specifically, in an example, after the isolation trench structure 103 is formed or the capping layer 104 is further formed, the sealing layer 105 is formed, which may be performed by a deposition process, such as an atmospheric pressure chemical vapor deposition process (APCVD), and the air cavities 106 are formed in the trench space formed by the isolation trench structure 103 during the formation of the sealing layer 105, wherein the formation process of the air cavities 106 may be as shown in fig. 9-11, which is a schematic diagram of the formation process of the structure in the dashed line frame in fig. 8, in fig. 9, an initial deposition layer 105a is formed at the beginning of deposition, at this time, the deposition speed at the opening of the isolation trench structure 103 is fast, and protrusions are formed, as shown in the dashed line frame in fig. 9, at this time, the bottom and the sidewalls of the isolation trench structure 103 may also have a very thin layer of sealing deposition layer material, but the deposition speed is lower than that at the opening, as the deposition continues, the structure gradually increases until they contact each other to form a seal, as shown in fig. 10, forming a seal deposition layer 105b, at which time the air cavities 106 are formed in the space of the isolation trench structure, and continuing to deposit the seal material, as shown in fig. 11, to a desired thickness to finally form the seal layer 105. The thickness of the sealing layer 105 is a distance between an upper surface of the sealing layer 105 and a lower surface of the sealing layer 105 on the insulating layer 101 around the isolation trench structure 103. In one example, a High Deposition rate (High Deposition rate) is used to form an Overhang structure, i.e., the sealing layer 105, the Deposition rate can be designed according to the size of the air cavity to be formed actually, the structure continues to grow to seal the top opening, the increase in Deposition rate is beneficial to sealing in advance, so that the internal deposited oxide layer is thin or almost not, and in one example, the formation of the air cavity is realized by controlling the Deposition rate. In one example, the sealing layer 105 is formed only on the top opening of the isolation trench structure 103 and the surface of the insulating layer around the top opening to form the air cavity 106, and in another example, the sealing layer 105 is partially deposited in the isolation trench structure in addition to the above position, or is directly formed on the bottom and the sidewall of the isolation trench structure, or is formed on the surface of the covering layer to form the air cavity 106. By adopting the method for forming the air cavity, the limitation caused by directly etching to form the air cavity can be solved, the problem that the air cavity with high depth-to-width ratio is difficult to form by etching is solved, the appearance of the air cavity is more favorable for improving signal crosstalk by filling the sealing layer after the isolation groove structure is formed by etching, the air cavity can be further reduced, and in one example, the width of the formed air cavity can be smaller than 45 nm.
Finally, as shown in S5 of fig. 1 and fig. 12, a filter structure 107 is formed at least in the insulating layer 101 between adjacent air cavities 106.
Specifically, in this step, the filter structure 107 may be a color filter, the filter structure 107 may convert incident light into corresponding color light, in an example, the filter structure trench is formed in the insulating layer 101 before being filled with the filter structure by an etching process, and may be formed by any RGB filter material, in an example, the adjacent isolation trench structures 103 have a space from the filter structure trench, and at least an insulating layer is provided between the adjacent isolation trench structures and the adjacent filter structure trench, and may also be separated by the capping layer and a portion of the insulating layer. In another example, the filtering structure 107 extends up into the sealing layer 105, and further, is flush with the upper surface of the sealing layer 105, as shown in fig. 12. In the structure of the present invention, as shown in fig. 13, the air cavities 106 are formed between the formed filtering structures 107, so that incident light is incident from the optically dense medium into the optically sparse medium to form total reflection of light, and no influence is caused between adjacent filtering structures, thereby reducing crosstalk of the image sensor and improving quantum efficiency.
In addition, as shown in fig. 14, as an example, after forming the filtering structure 107, the method further includes the steps of: and preparing a lens structure 108 on each of the filter structures, in an example, the filter structure 107 extends upward into the sealing layer 105 and is flush with the upper surface of the sealing layer 105, and the lens structure 108 is disposed above and below each of the filter structures 107 and extends to cover the sealing layer 105 around the corresponding filter structure 107.
Specifically, the lens structure 108 is prepared to focus incident light, and the method for forming the lens structure 108 and the selection of the lens structure 108 are known to those skilled in the art, and will not be described herein in detail, and in an example, the image sensor may include a plurality of lens structures arranged in an array, which may be specifically set according to actual requirements.
In addition, as shown in fig. 12 to 15 and referring to fig. 1 to 11, the present invention further provides an image sensor structure, wherein the image sensor structure is preferably prepared by the preparation method provided by the present invention, and the image sensor structure comprises:
a base structure 100;
the insulating layer 101 is positioned on the substrate structure 100, and a plurality of isolation groove structures 103 arranged at intervals are formed in the insulating layer 101;
the sealing layer 105 is correspondingly positioned on the isolation groove structure 103, and the sealing layer 105 at least seals the opening of the isolation groove structure 103 so as to form an air cavity 106 in the isolation groove structure 103; and
and the filter structure 107 is at least positioned in the insulating layer 101 between the adjacent air cavities 106.
As an example, the base structure 100 includes, in order from bottom to top, a supporting substrate 109, a metal interconnection layer 111, and a photosensitive layer 114.
As an example, the base structure 100 includes a substrate, a photosensitive layer, and a metal interconnection layer in sequence from bottom to top.
Specifically, the substrate structure 100 may be any substrate structure in an image sensor, and a structure such as an optical filter may be fabricated on the substrate structure to complete the fabrication of the image sensor. In an example, referring to fig. 15, an example of the base structure 100 is provided, where the base structure 100 includes, in order from bottom to top: a supporting substrate 109, a metal interconnection layer 111, and a photosensitive layer 114, so as to form a back-illuminated image sensor, wherein the supporting substrate 109 may be a supporting wafer, including but not limited to a silicon substrate, such as a bare silicon wafer, but of course, in other examples, the supporting substrate 109 may be replaced by any one of a ceramic supporting substrate, a gallium nitride supporting substrate, or a glass supporting substrate, etc., which can serve as a support. Of course, a front-illuminated image sensor may also be formed based on the base structure 100, that is, the base structure 100 includes, from bottom to top, a substrate including, but not limited to, a silicon substrate, a photosensitive layer, and a metal interconnection layer 111.
As an example, the photosensitive layer 114 includes a plurality of photosensitive regions 113 and an isolation region 112 for isolating adjacent photosensitive regions 113, wherein the isolation trench structure 103 is disposed corresponding to the isolation region 112 up and down.
Specifically, in one example, the photosensitive layer 114 of the substrate structure 100 is shown in fig. 15, and includes a photosensitive region 113, wherein, a Photodiode (Photodiode) may be formed in the photosensitive region 113 for converting a received external optical signal into an excitation electrical signal and an image output signal, in addition, the photosensitive regions 113 may be isolated by isolation regions 112, and in one example, each isolation region 112 is formed of two parts, namely, a Deep Trench Isolation (DTI) 112a and a Shallow Trench Isolation (STI)112b, which are disposed in an example up and down corresponding to each other to isolate the photosensitive region 113, in an example, the deep trench isolation structure 112a may be, but is not limited to being, filled with silicon oxide, and the shallow trench isolation structure 112b may be, but is not limited to being, filled with silicon oxide.
In an example, when the photosensitive layer 114 includes a plurality of photosensitive regions 113 and an isolation region 112 that isolates adjacent photosensitive regions 113, the isolation groove structure 103 is formed to be vertically corresponding to the isolation region 112, so that a subsequently formed filtering structure is vertically corresponding to the photosensitive region 113 of the photosensitive layer, and light passing through the filtering structure can effectively enter the photosensitive region, thereby improving device efficiency.
In addition, in an example, the Metal interconnection layer 111 includes Metal interconnection structures (BEOL Metal)111a and dielectric layers (BEOL IMD)111b located between the Metal interconnection structures, the Metal interconnection structures 111a are located in the dielectric layers 111b, the dielectric layers 111b are used for insulating and isolating the Metal interconnection structures 111a, and in addition, the Metal interconnection layer 111 is electrically connected with the photosensitive layer 114, such as in a back-illuminated image sensor, the photodiode is used for converting a received external optical signal into an excitation electrical signal and an image output signal and outputting the excitation electrical signal and the image output signal through the Metal interconnection layer 111.
Specifically, in an example, a Bonding layer (Bonding interface)110 is further formed between the supporting substrate 109 and the photosensitive layer 114 of the upper layer or between the supporting substrate 109 and the metal interconnection layer 111 of the upper layer, in an example, the Bonding layer 110 may be a Bonding layer, which bonds the supporting substrate 109 and the device structure layer above, and may use any Bonding process, and the material of the Bonding layer 110 includes, but is not limited to, an oxide.
Illustratively, the image sensor structure further comprises a high-dielectric-constant dielectric layer 115, wherein the high-dielectric-constant dielectric layer 115 is located between the base structure 100 and the insulating layer 101. In addition, in an optional example, a high-k dielectric layer 115 is further formed on the photosensitive layer 114, so as to confine electrons in the isolation region and reduce dark current, the material of the high-k dielectric layer 115 may be HfO, and the thickness of the high-k dielectric layer 115 is between 60 angstroms and 70 angstroms.
In addition, the insulating layer 101 is formed with a structure such as an isolation trench structure on the insulating layer 101, so as to manufacture a subsequent device. In an example, the insulating layer 101 may be a silicon oxide layer, but is not limited thereto, and the thickness d1 of the insulating layer 101 is between 2950 a and 3350 a, such as 3000 a, 31000 a, and the like.
Specifically, the isolation trench structure 103 is used to form the subsequent air cavity 106, the depth d2 of the isolation trench structure 103 is between 2950 a and 3350 a, such as 3000 a, 31000 a, and the like, preferably, the depth of the isolation trench structure 103 is consistent with the thickness of the insulating layer 101, the width w1 of the isolation trench structure 103 is between 190nm and 230nm, preferably between 200nm and 220nm, and in this example, the width of the isolation trench structure 103 is selected to be 210 nm.
As an example, the image sensor structure further includes an anti-reflection blocking layer 102, the anti-reflection blocking layer 102 is located between the substrate structure 100 and the insulating layer 101, and the isolation trench structure 103 penetrates through the insulating layer 101 and exposes the anti-reflection blocking layer 102.
In addition, in an optional example, an anti-reflection barrier layer 102 is further formed between the insulating layer 101 and the substrate structure 100, in an example, the isolation trench structure 103 is formed to penetrate through the insulating layer 101 and expose the anti-reflection barrier layer 102, wherein the anti-reflection barrier layer 102 is made of a material including, but not limited to, silicon nitride, and the anti-reflection barrier layer 102 may function as an anti-reflection layer (ARC), and may also function as an etch barrier layer for forming the isolation trench structure 103, so as to ensure that sidewalls and the like of the isolation trench structure 103 have good etching uniformity during etching, and the thickness thereof may be set according to actual requirements. In addition, when a high-k dielectric layer 115 is further formed in the substrate structure 100, the anti-reflection blocking layer 102 is formed on the high-k dielectric layer 115.
As an example, the image sensor further includes a capping layer 104, and the capping layer 104 is located at least at the bottom and the sidewall of the isolation trench structure 103.
Illustratively, the thickness of the capping layer 104 is between 1/10-1/3 of the width of the isolation trench structure.
As an example, the width of the isolation trench structure remaining after forming the capping layer is between 80nm and 120 nm.
Illustratively, the capping layer 104 comprises a silicon nitride layer having a thickness between 300 angstroms and 700 angstroms.
Specifically, the formation of the capping layer 104 may modify the size of the isolation trench structure 103 after the formation of the isolation trench structure 103, for example, further reduce the size of the isolation trench structure, so that the subsequent formation of the air cavity is easier to seal, and in addition, the formation of the capping layer 104 may also prevent the formed air cavity from being damaged in the subsequent etching (Color Filter trench) process for forming the optical Filter structure, so as to form lateral protection. In addition, the material of the capping layer 104 includes, but is not limited to, silicon nitride, the material of the capping layer 104 is preferably the same as the material of the anti-reflection barrier layer 102, and the formation process thereof may adopt a chemical vapor deposition process, which may be selected according to the actual process. In addition, in an example, the capping layer 104 is a continuous material layer, is located at the bottom and the sidewall of the isolation trench structure 103, and extends to cover the insulating layer 101 around the isolation trench structure 103, as shown in fig. 7.
In addition, in an example, the thickness d3 of the cap layer 104 is controlled to be between 1/10 and 1/3 of the width of the isolation trench structure 103, so as to ensure that the air cavity is effectively formed in the space of the remaining isolation trench structure, in an example, the thickness of the cap layer 104 is between 300 and 700 angstroms, and may be selected to be 400 and 500 angstroms, and after the cap layer 104 is formed, the width w2 of the remaining isolation trench structure, that is, the dimension of the width of the isolation trench structure 103 minus the thicknesses of two cap layers 104, is between 80 and 120nm, and may be selected to be 100nm and 110 nm.
Specifically, the air-tight structure further comprises a sealing layer 105, wherein the sealing layer 105 at least seals the opening of the isolation trench structure 103 so as to form an air cavity 106 in the isolation trench structure 103.
By way of example, the sealing layer 105 comprises an ethyl orthosilicate layer, and the thickness of the sealing layer 105 is between 2800 angstroms and 3200 angstroms.
Specifically, after the isolation trench structure 103 is formed or the capping layer 104 is further formed, the sealing layer 105 is formed, the air cavity 106 is formed in the trench space formed by the isolation trench structure 103 during the formation of the sealing layer 105, the sealing layer 105 seals the top opening, and the deposited oxide layer is thin or hardly. In one example, the sealing layer 105 is formed only on the top opening of the isolation trench structure 103 and the surface of the insulating layer around the top opening to form the air cavity 106, and in another example, the sealing layer 105 is partially deposited in the isolation trench structure in addition to the above position, or is directly formed on the bottom and the sidewall of the isolation trench structure, or is formed on the surface of the covering layer to form the air cavity 106. The air cavity of the present invention may be formed in the sealing layer formed after the isolation trench structure is formed by etching, so that the morphology of the air cavity is more favorable for improving signal crosstalk, and the air cavity may be further made smaller, in an example, the width of the formed air cavity may be less than 45 nm.
Specifically, the filter structure 107 may be a color filter, the filter structure 107 may convert incident light into corresponding color light, and may be formed of any RGB filter materials, in an example, the adjacent isolation trench structures 103 have a space with the trench of the filter structure, and are separated from each other by at least an insulating layer, and may also be separated by the capping layer and a portion of the insulating layer. In another example, the filtering structure 107 extends up into the sealing layer 105, and further, is flush with the upper surface of the sealing layer 105, as shown in fig. 12. In the structure of the present invention, as shown in fig. 13, the air cavities 106 are formed between the formed filtering structures 107, so that incident light is incident from the optically dense medium into the optically sparse medium to form total reflection of light, and no influence is caused between adjacent filtering structures, thereby reducing crosstalk of the image sensor and improving quantum efficiency.
As an example; the image sensor structure further includes a lens structure 108, wherein the filter structures 107 extend upward into the sealing layer 105 and are flush with the upper surface of the sealing layer 105, and the lens structure 108 and each filter structure 107 are correspondingly disposed above and below and extend to cover the sealing layer 105 around the corresponding filter structure 107.
Specifically, the lens structure 108 is prepared to focus incident light, and in an example, the image sensor may include a plurality of lens structures arranged in an array, which may be specifically set according to actual requirements.
In summary, the present invention provides an image sensor structure and a method for manufacturing the same, wherein the method comprises the following steps: providing a substrate structure; forming an insulating layer on the substrate structure; forming a plurality of isolation groove structures which are arranged at intervals in the insulating layer; forming a sealing layer on the insulating layer with the isolation groove structure, wherein the sealing layer at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and forming a light filtering structure at least in the insulating layer between the adjacent air cavities. According to the image sensor structure and the manufacturing method thereof, the air cavity structure is formed between the light filtering structures, so that incident light can enter the light thinning medium from the optical dense medium, total reflection is formed at the interface, interference of light received between the light filtering structures is effectively improved, crosstalk of the sensor can be effectively reduced, and quantum efficiency is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (15)
1. A method for manufacturing an image sensor structure, comprising the steps of:
providing a substrate structure, wherein the substrate structure comprises a photosensitive layer, and the photosensitive layer comprises a plurality of photosensitive areas and isolation areas for isolating the adjacent photosensitive areas;
forming an insulating layer on the substrate structure;
forming a plurality of isolation groove structures which are arranged at intervals in the insulating layer, wherein the isolation groove structures are arranged corresponding to the isolation areas up and down;
forming a sealing layer on the insulating layer with the isolation groove structure, wherein the sealing layer at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and
and forming a light filtering structure at least in the insulating layer between the adjacent air cavities.
2. The method of claim 1, wherein the base structure comprises a supporting substrate, a metal interconnection layer, and the photosensitive layer in sequence from bottom to top or the base structure comprises a substrate, the photosensitive layer, and a metal interconnection layer in sequence from bottom to top.
3. The method of claim 1, further comprising the steps of, prior to forming the insulating layer: forming a high dielectric constant dielectric layer on the substrate structure; the method also comprises the following steps after the filtering structure is formed: and preparing a lens structure on each filtering structure, wherein the filtering structures extend upwards into the sealing layer and are flush with the upper surface of the sealing layer, and the lens structures and the filtering structures are arranged up and down correspondingly and extend to cover the sealing layer around the corresponding filtering structures.
4. The method of claim 1, further comprising the steps of, prior to forming the insulating layer: and forming an anti-reflection barrier layer on the substrate structure, wherein the formed isolation groove structure penetrates through the insulating layer and exposes the anti-reflection barrier layer.
5. The method of claim 1, wherein the process for forming the insulating layer comprises an atomic layer deposition process, the insulating layer comprises a silicon oxide layer, and the insulating layer has a thickness of between 2950 angstroms and 3350 angstroms; the forming process of the isolation groove structure comprises a dry etching process, the depth of the isolation groove structure is between 2950 angstroms and 3350 angstroms, and the width of the isolation groove structure is between 190nm and 230 nm.
6. The method of claim 1, wherein the process of forming the capping layer comprises a deposition process, the deposition process comprising an atmospheric pressure chemical vapor deposition process; the sealing layer comprises an ethyl orthosilicate layer, and the thickness of the sealing layer is between 2800 angstroms and 3200 angstroms.
7. The method for fabricating an image sensor structure according to any one of claims 1 to 6, further comprising, before forming the capping layer, the steps of: at least the bottom and sidewalls of the isolation trench structure are formed with a capping layer.
8. The method of claim 7, wherein the cover layer has a thickness between 1/10-1/3 of the width of the isolation trench structure; the width of the residual isolation groove structure after the covering layer is formed is between 80nm and 120 nm; the forming process of the covering layer comprises a chemical vapor deposition process, the covering layer comprises a silicon nitride layer, and the thickness of the covering layer is between 300 and 700 angstroms.
9. An image sensor structure, comprising:
the substrate structure comprises a photosensitive layer, wherein the photosensitive layer comprises a plurality of photosensitive areas and isolation areas for isolating the adjacent photosensitive areas;
the insulating layer is positioned on the substrate structure, a plurality of isolation groove structures which are arranged at intervals are formed in the insulating layer, and the isolation groove structures and the isolation area are arranged in an up-down corresponding mode;
the sealing layer is correspondingly positioned on the isolation groove structure and at least seals the opening of the isolation groove structure so as to form an air cavity in the isolation groove structure; and
and the light filtering structure is at least positioned in the insulating layer between the adjacent air cavities.
10. The image sensor structure of claim 9, wherein the base structure comprises, in order from bottom to top, a support substrate, a metal interconnect layer, and the photosensitive layer or the base structure comprises, in order from bottom to top, a substrate, the photosensitive layer, and a metal interconnect layer.
11. The image sensor structure of claim 9, further comprising a high dielectric constant dielectric layer between the base structure and the insulating layer; the image sensor structure further comprises a lens structure, wherein the filtering structures extend upwards to the sealing layer and are flush with the upper surface of the sealing layer, and the lens structure and each filtering structure are correspondingly arranged up and down and extend to cover the sealing layer around the corresponding filtering structure.
12. The image sensor structure of claim 9, further comprising an anti-reflective barrier layer between the base structure and the insulating layer, wherein the isolation trench structure penetrates the insulating layer and exposes the anti-reflective barrier layer.
13. The image sensor structure of claim 9, wherein the insulating layer comprises a silicon oxide layer, the insulating layer having a thickness between 2950 a and 3350 a; the depth of the isolation groove structure is between 2950 angstroms and 3350 angstroms, and the width of the isolation groove structure is between 190nm and 230 nm; the sealing layer comprises an ethyl orthosilicate layer, and the thickness of the sealing layer is between 2800 angstroms and 3200 angstroms.
14. The image sensor structure of any of claims 9-13, wherein the image sensor further comprises a capping layer at least at a bottom and sidewalls of the isolation trench structure.
15. The image sensor structure of claim 14, wherein the thickness of the capping layer is between 1/10-1/3 of the width of the isolation trench structure; the width of the residual isolation groove structure after the covering layer is formed is between 80nm and 120 nm; the capping layer comprises a silicon nitride layer, and the capping layer has a thickness between 300 angstroms and 700 angstroms.
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