CN106298811A - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

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CN106298811A
CN106298811A CN201610862535.9A CN201610862535A CN106298811A CN 106298811 A CN106298811 A CN 106298811A CN 201610862535 A CN201610862535 A CN 201610862535A CN 106298811 A CN106298811 A CN 106298811A
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CN106298811B (zh
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郭洪伟
任文明
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板及其制备方法、显示装置，属于显示技术领域，其可解决现有的取向液扩散不均而造成显示不良的问题。本发明的阵列基板包括：基底，设置在所述基底上的层结构，设置在所述层结构上方的取向层；其中，在所述层结构中设置有凹孔，环绕所述凹孔的取向层至少存在两个位置到所述基底的距离不相等。

Description

阵列基板及其制备方法、显示装置
技术领域
本发明属于显示技术领域，具体涉及一种阵列基板及其制备方法、显示装置。
背景技术
液晶显示装置(Liquid Crystal Display：简称LCD)是目前一种较为常用的显示装置之一。一般液晶显示器包括：相对设置阵列基板和彩膜基板，以及设置在阵列基板和彩膜基板之间的液晶层。为了液晶分子在阵列基板和彩膜基板上有序的排列，则需要在这两者相对的侧面上涂覆取向膜。
近年来，随着制作工艺的不断更新与改善，取向膜的涂覆逐渐用喷墨(Inkjet)方式替代了以往的涂料(Coater)方式。与传统的Coater方式相比，Inkjet方式具有涂覆速度快、节省原材料成本、工艺易于操作调整等优点。目前Inkjet方式存在的一个主要问题是取向液(PI)扩散效果欠佳，主要表现在阵列基板上进行喷墨取向液。原因是阵列基板的表面段差相对较大，取向液往往不能得到很有效的扩散，尤其在取向液进入过孔和不进入过孔两种情况呈现周期性规律的差异时，将会在宏观上表现出Mura不良。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种可以改善由于取向液扩散不均而造成显示不良的问题的阵列基板及其制备方法、显示装置。
解决本发明技术问题所采用的技术方案是一种阵列基板，包括：基底，设置在所述基底上的层结构，设置在所述层结构上方的取向层；其中，在所述层结构中设置有凹孔，环绕所述凹孔的取向层至少存在两个位置到所述基底的距离不相等。
优选的是，环绕所述凹孔的取向层存在两个位置到所述基底的距离不相等，且这两个位置沿所述过孔的轴线对称设置。
优选的是，所述层结构包括依次设置在所述基底上方的公共电极线所在层、栅极绝缘层、平坦化层、公共电极所在层；所述凹孔为贯穿所述栅极绝缘层和所述平坦化层的过孔，用于将所述公共电极与所述公共电极线连接。
进一步优选的是，所述公共电极线位于所述过孔所在区域和环绕所述过孔的部分所述栅极绝缘层下方。
进一步优选的是，所述公共电极线位于所述过孔的部分区域和环绕所述过孔的部分所述栅极绝缘层下方。
解决本发明技术问题所采用的技术方案是一种阵列基板的制备方法，包括：
在基底上形成层结构，并在所述层结构中形成凹孔；
在所述层结构上方形成取向层，其中环绕所述凹孔的所述取向层至少存在两个位置到所述基底的距离不相等。
优选的是，所述层结构包括依次设置在所述基底上方的公共电极线所在层、栅极绝缘层、平坦化层、公共电极所在层；所述凹孔为贯穿所述栅极绝缘层和所述平坦化层的过孔，用于将所述公共电极与所述公共电极线连接。
进一步优选的是，所述公共电极线位于所述过孔所在区域和环绕所述过孔的部分所述栅极绝缘层下方。
进一步优选的是，所述公共电极线位于所述过孔的部分区域和环绕所述过孔的部分所述栅极绝缘层下方。
解决本发明技术问题所采用的技术方案是一种显示装置，其包括上述的阵列基板。
本发明具有如下有益效果：
由于本发明中的阵列基板，在环绕凹孔的取向层至少存在两个位置到基底的距离不相等，也就是说在形成取向层之前的阵列基板的上表面在环绕凹孔的周围存在高度差，因此可以缓解阵列基板的上表面在环绕凹孔位置的表面张力，从而在对该种阵列基板的上表面喷涂取向液以形成取向层时，可以很好的使得取向液流入阵列基板上与凹孔所对应的位置，进而改善由于取向液扩散不均而造成显示不良的问题。
附图说明
图1为现有的阵列基板的结构示意图；
图2为本发明的实施例1的阵列基板的一种结构示意图；
图3为本发明的实施例1的阵列基板的另一种结构示意图；
图4为本发明的实施例1的阵列基板的制备方法的流程图。
其中附图标记为：10、基底；1、公共电极线；2、栅极绝缘层；3、平坦化层；4、公共电极；5、取向层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
结合图2和3所示，本实施例提供一种阵列基板，包括：基底10，设置在基底10上的层结构，设置在层结构上方的取向层5；其中，在层结构中设置有凹孔，且环绕凹孔的取向层5至少存在两个位置到基底10的距离不相等，即d1≠d2。
由于本实施例中的阵列基板，在环绕凹孔的取向层5至少存在两个位置到基底10的距离不相等，也就是说在形成取向层5之前的阵列基板的上表面在环绕凹孔的周围存在高度差，因此，较如图1所示的现有技术中的阵列基板而言，可以缓解阵列基板的上表面在环绕凹孔位置的表面张力，从而在对该种阵列基板的上表面喷涂取向液以形成取向层5时，可以很好的使得取向液流入阵列基板上与凹孔所对应的位置，进而改善由于取向液扩散不均而造成显示不良的问题。
其中，在本实施例的阵列基板中，环绕所述凹孔的取向层5存在两个位置到所述基底10的距离不相等，且这两个位置沿所述过孔的轴线对称设置。此时，可以尽可能的缓解凹孔的表面张力。当然，也可以设置环绕凹孔的取向层5存在多个位置到所述基底10的距离不相等，还可以设置环绕所述凹孔的取向层5存在两个位置到所述基底10的距离不相等，且这两个位置沿所述过孔的轴线非对称设置。
相应的，本实施例还提供了一种阵列基板的制备方法，包括：在基底10上形成层结构，并在层结构中形成有凹孔；形成取向层5，其中环绕所述凹孔的取向层5至少存在两个位置到所述基底10的距离不相等(具体结合下述实施方式进行说明)。
以下结合一种优选实现方式对本实施例的阵列基板进行说明。
作为本实施例中的一种优选实现方式，该阵列基板中的层结构包括依次设置在所述基底10上方的公共电极线1所在层、栅极绝缘层2、平坦化层3、公共电极4所在层；所述凹孔为贯穿所述栅极绝缘层2和所述平坦化层3的过孔，用于将所述公共电极4与所述公共电极线1连接。
结合2和3所示，具体的，该阵列基板包括：基底10，设置在基底10上的公共电极线1，设置在公共电极线1所在层上方的栅极绝缘层2，设置在栅极绝缘层2上方的平坦化层3，在栅极绝缘层2和平坦化层3中形成贯穿这两层的过孔，在过孔底部裸露出公共电极线1，设置在平坦化层3上方的公共电极4，且公共电极4通过过孔与公共电极线1连接，设置在公共电极4所在层上方的取向层5。其中，特别的是，在实施例的与过孔周边位置对应的栅极绝绝缘层2下方，只有部分位置设置有公共电极线1，此时可以看出环绕过孔的平坦化层3的上表面到基底10的距离不等，也就是说在过孔的上沿高度不一致，即通过过孔周边段差改善过孔表面张力，因此在喷涂取向液以形成取向层5时，可以很好的使得取向液流入阵列基板上与过孔所对应的位置，进而改善由于取向液扩散不均而成显示不良的问题。
其中，位于过孔内的公共电极线1可以填充满整个过孔，以使公共电极4与公共电极线1可以很好的接触，如图2所示。当然，位于过孔内的公共电极线1可以不填充满整个过孔，只要保证过孔内部有公共电极线1即可，如图3所示。
针对上述阵列基板，本实施例还提供了该种阵列基板的制备方法，如图4所示。其中，在以下步骤中，构图工艺，可只包括光刻工艺，或，包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光刻工艺，是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。形成薄膜通常有沉积、涂敷、溅射等多种方式。可根据本实施例中所形成的结构选择相应的构图工艺。该阵列基板的制备方法具体包括如下步骤：
步骤一、在基底10上，通过构图工艺形成包括薄膜晶体管各层结构和公共电极线1的图形。
以该步骤中所形成的薄膜晶体管为底栅型薄膜晶体管为例，该步骤具体包括：通过构图工艺形成包括薄膜晶体管栅极、栅线和公共电极线1的图形；之后，形成栅极绝缘层2；接下来通过构图工艺形成包括薄膜晶体管有源层的图形；最后，通过构图工艺形成包括薄膜晶体管源极和漏极的图形。
步骤二、在完成步骤一的基底10上，形成平坦化层3，形成的方式可以为涂覆；之后，通过构图工艺，在所述平坦化层3和栅极绝缘层2中形成过孔。其中，在过孔底部裸露出公共电极线1，且与过孔周边位置对应的栅极绝绝缘层2下方，只有部分位置形成有公共电极线1。
步骤三、在完成步骤二的基底10上，通过构图工艺形成包括公共电极4的图形，且该公共电极4通过过孔与公共电极线1连接。
步骤四、在完成步骤三的基底10上，形成取向液，并对取向液进行固化形成取向层5的步骤；其中形成取向液的方式可以采用喷涂的方式，但也不局限于这一种方式。
其中，上述的位于过孔内的公共电极线1可以填充满整个过孔，以使公共电极4与公共电极线1可以很好的接触。当然，位于过孔内的公共电极线1可以不填充满整个过孔，只要保证过孔内部有公共电极线1即可。
在此需要说明的是，本实施例的阵列基板仅仅是以凹孔为用于将公共电极线1与公共电极4连接的过孔为例进行说明。实际上，凹孔也可以为用于薄膜晶体管漏极与像素电极连接的过孔等，同样可以采用上述的方式对阵列基板进行改善。
实施例2：
本实施例提供一种显示装置，其包括实施例1中的阵列基板。由于本实施例1中的阵列基板，在环绕凹孔的取向层5至少存在两个位置到基底10的距离不相等，也就是说在形成取向层5之前的阵列基板的上表面在环绕凹孔的周围存在高度差，因此，较如图1所示的现有技术中的阵列基板而言，可以缓解阵列基板的上表面在环绕凹孔位置的表面张力，从而在对该种阵列基板的上表面喷涂取向液以形成取向层5时，可以很好的使得取向液流入阵列基板上与凹孔所对应的位置，进而改善由于取向液扩散不均而造成显示不良的问题，提高显示装置的显示效果。
其中，显示装置可以为液晶显示装置或者电致发光显示装置，例如液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种阵列基板，包括：基底，设置在所述基底上的层结构，设置在所述层结构上方的取向层；其中，在所述层结构中设置有凹孔，其特征在于，环绕所述凹孔的取向层至少存在两个位置到所述基底的距离不相等。
2.根据权利要求1所述的阵列基板，其特征在于，环绕所述凹孔的取向层存在两个位置到所述基底的距离不相等，且这两个位置沿所述过孔的轴线对称设置。
3.根据权利要求1所述的阵列基板，其特征在于，所述层结构包括依次设置在所述基底上方的公共电极线所在层、栅极绝缘层、平坦化层、公共电极所在层；所述凹孔为贯穿所述栅极绝缘层和所述平坦化层的过孔，用于将所述公共电极与所述公共电极线连接。
4.根据权利要求3所述的阵列基板，其特征在于，所述公共电极线位于所述过孔所在区域和环绕所述过孔的部分所述栅极绝缘层下方。
5.根据权利要求3所述的阵列基板，其特征在于，所述公共电极线位于所述过孔的部分区域和环绕所述过孔的部分所述栅极绝缘层下方。
6.一种阵列基板的制备方法，其特征在于，包括：
在基底上形成层结构，并在所述层结构中形成凹孔；
在所述层结构上方形成取向层，其中环绕所述凹孔的所述取向层至少存在两个位置到所述基底的距离不相等。
7.根据权利要求6所述的阵列基板的制备方法，其特征在于，所述层结构包括依次设置在所述基底上方的公共电极线所在层、栅极绝缘层、平坦化层、公共电极所在层；所述凹孔为贯穿所述栅极绝缘层和所述平坦化层的过孔，用于将所述公共电极与所述公共电极线连接。
8.根据权利要求7所述的阵列基板的制备方法，其特征在于，所述公共电极线位于所述过孔所在区域和环绕所述过孔的部分所述栅极绝缘层下方。
9.根据权利要求7所述的阵列基板的制备方法，其特征在于，所述公共电极线位于所述过孔的部分区域和环绕所述过孔的部分所述栅极绝缘层下方。
10.一种显示装置，其特征在于，包括权利要求1-5中任一项所述的阵列基板。
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