CN106298574A - The method for measuring thickness of metal coupling - Google Patents
The method for measuring thickness of metal coupling Download PDFInfo
- Publication number
- CN106298574A CN106298574A CN201610853108.4A CN201610853108A CN106298574A CN 106298574 A CN106298574 A CN 106298574A CN 201610853108 A CN201610853108 A CN 201610853108A CN 106298574 A CN106298574 A CN 106298574A
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- Prior art keywords
- thickness
- metal coupling
- measuring
- metal
- opening
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of method for measuring thickness of metal coupling, including: providing a substrate, described substrate surface to be formed with the Patterned masking layer with opening, described opening exposes the part surface of substrate；Metal coupling is formed in described opening；Measure the thickness obtaining described metal coupling；After measuring the thickness obtaining described metal coupling, remove described Patterned masking layer.The thickness detecting method of above-mentioned metal coupling, it is possible to when thickness abnormity being detected, reduces rework cost.
Description
Technical field
The present invention relates to encapsulation technology field, particularly relate to the method for measuring thickness of a kind of metal coupling.
Background technology
Metal coupling technology is one of technology conventional in semiconductor packages, generally uses the materials such as Au, Cu, SnAg.
In metal coupling manufacture process, generally first need plating substrate 100 surface deposition inculating crystal layer 101 (as
TiW, Ti/Cu etc.), subsequently by the spin coating of photoresist 102, expose, the technique such as development is formed and needs the figure of metal coupling, its
Sectional view is as shown in Figure 1A.
Plating forms metal coupling 103, and the material of described metal coupling 103 can be Au, Cu, Cu/Ni/Au etc., such as figure
Shown in 1B.
Remove photoresist 102 again, only leave metal coupling 103, as shown in Figure 1 C, finally use dry method or wet processing
Remove the inculating crystal layer 101 of metal coupling 103 periphery.
In actual manufacture, the height of metal coupling 103 is generally controlled by the time electroplated, but, along with electricity
The change in technical process of the concentration of plating solution, the concentration of usual electroplate liquid can decline along with technical process, at different time, adopt
The thickness of the metal coupling 103 obtained with same technique duration has larger difference, wants beyond product specification if difference is excessive
Ask, then need to do over again.Prior art is after the removal photoresist 102 shown in Fig. 1 C, carries out the height of metal coupling 103
Measure, i.e. use step instrument or optical device that its pattern is detected, obtain height H or the measurement of height H of single-point
Figure, it is achieved the detection to its thickness.But, the H obtained when detection exceedes specification requirement, the technique being necessary for carrying out doing over again.
The technique of doing over again of metal coupling is extremely complex, because figure and the existence of alignment issues, it usually needs remove completely
Metal coupling and inculating crystal layer, the most complicated for the encapsulating structure with multiple wiring layer；Cause raw material, time
Between, the huge waste of cost, and affect the friendship phase, greatly reduce benefit.It is known that the cost of plating step occupies metal
The sizable part of projection packaging cost.
Summary of the invention
The technical problem to be solved is to provide the thickness detecting method of a kind of metal coupling, to reduce metal
The doing over again of producing lug process, reduce cost.
In order to solve the problems referred to above, the invention provides the thickness detecting method of a kind of metal coupling, including: a base is provided
The end, described substrate surface is formed with the Patterned masking layer with opening, and described opening exposes the part surface of substrate；Institute
Metal coupling is formed in stating opening；Measure the thickness obtaining described metal coupling；Measuring the thickness obtaining described metal coupling
Afterwards, described Patterned masking layer is removed.
Optionally, the method measuring the thickness obtaining described metal coupling includes: obtain the depth H 1 of described opening；Obtain
The Patterned masking layer surface of open top sidewall and the height difference H 2 of metal lug surface, the thickness of described metal coupling is
H1-H2。
Optionally, it is thus achieved that the method for the depth H 1 of described opening includes: obtain the apparent height of substrate；Obtain and graphically cover
The apparent height of film layer；Calculate the difference in height on the surface of described substrate and the surface of Patterned masking layer, obtain the degree of depth of opening
H1。
Optionally, by directly measuring the difference in height of metal lug surface and metal coupling base plane, metal is obtained convex
The thickness of block.
Optionally, step instrument or optical thickness detection equipment is used to obtain the thickness of described metal coupling.
Optionally, measure obtain described metal coupling thickness after, remove described Patterned masking layer before, also wrap
Include: judge whether the thickness of described metal coupling is positioned at tolerance interval；If it is not, then the thickness of described metal coupling is made
Compensate, until the thickness of the metal coupling after Bu Changing is positioned at tolerance interval.
Optionally, if the thickness of described metal coupling is more than described tolerance interval, described metal is made by etching technics
The thickness of projection declines, until the metal coupling thickness after Ke Shi is positioned at described tolerance interval；If described metal coupling
Thickness is less than described tolerance interval, continues to use the technique forming described metal coupling, deposits metal level, make institute in opening
The thickness stating metal coupling increases, until the thickness of metal coupling is positioned at described tolerance interval.
Optionally, the technique forming described metal coupling is electroplating technology.
It is an advantage of the current invention that, before Patterned masking layer is removed, the thickness of metal coupling to be measured, helps
In the exception at earlier stage discovery metal coupling thickness, do over again in time, described metal coupling thickness is carried out low cost
Original position compensate so that it is thickness meets requirement, thus greatly reduces the cost done over again, it is ensured that the date of delivery of product.
Accompanying drawing explanation
Figure 1A to Fig. 1 C is the structural representation of the forming process of the metal coupling of prior art of the present invention；
Fig. 2 is the thickness detecting method schematic flow sheet of the metal coupling of the embodiment of the invention；
Fig. 3 A to Fig. 3 B is the structural representation of the Thickness sensitivity process of the metal coupling of the embodiment of the invention；
Fig. 4 is the structural representation in the embodiment of the invention compensated metal coupling thickness.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the thickness detecting method of the metal coupling that the present invention provides is done in detail
Explanation.
Refer to Fig. 2, for the Thickness sensitivity schematic flow sheet of the metal coupling of the embodiment of the invention.
Step S1: providing a substrate, described substrate surface to be formed with the Patterned masking layer with opening, described opening is sudden and violent
Expose the part surface of substrate.
Step S2: form metal coupling in described opening.
Step S3: measure the thickness obtaining described metal coupling.
Step S4: after measuring the thickness obtaining described metal coupling, remove described Patterned masking layer.
The thickness of metal coupling is obtained in the pre-test removing described Patterned masking layer, such that it is able to according to metal coupling
Depth information, choose whether metal coupling thickness is compensated, owing to the existence of Patterned masking layer can be in shape
Carry out thickness compensation on the basis of the metal coupling become, such that it is able to reduce rework cost, improve efficiency.
Fig. 3 A～3B is the measuring method schematic diagram of the metal coupling thickness of the embodiment of the invention.
Refer to Fig. 3 A, it is provided that substrate, described substrate surface is formed with the Patterned masking layer 202 with opening 203, institute
State opening 203 and expose the part surface of substrate.
Described substrate can include Semiconductor substrate and be positioned at the dielectric layer of described semiconductor substrate surface.Described partly lead
The material of body substrate includes the semi-conducting materials such as silicon, germanium, SiGe, GaAs, described Semiconductor substrate can be body material also
It can be composite construction such as silicon-on-insulator.In the present embodiment, in the Semiconductor substrate of described substrate, it is formed with semiconductor device,
It is formed with metal connecting structure in described dielectric layer.The type of described substrate 300 and structure should not limit the protection model of the present invention
Enclose.
In this detailed description of the invention, described substrate includes substrate 200 and is positioned at the transition zone on described substrate 200 surface
201, described transition zone 201 is inculating crystal layer, and concrete material can be TiW, Ti or TiN etc., improve substrate surface electric conductivity and
Adhesiveness.Described transition zone 201 can be formed by physical deposition, vapour deposition or atom layer deposition process.Follow-up described
Transition zone 201 surface forms Patterned masking layer 202.
In this detailed description of the invention, the material of described Patterned masking layer 202 is photoresist, described Patterned masking layer
The forming method of 202 includes: use spin coating or spraying coating process, after substrate surface forms photoresist layer, to described photoresist
Layer is exposed development, forms opening 203.In other detailed description of the invention of the present invention, described Patterned masking layer 202
Material can also is that the materials such as silicon nitride, silicon oxide or silicon oxynitride, concrete, can in substrate deposition of mask material layer it
After, use etching technics that described mask layer is patterned, there is described in formation the Patterned masking layer of opening 203
202。
Obtain the depth H 1 of described opening 203, concrete, can first measure the surface (C plane) of substrate highly, Yi Jitu
The surface (B plane) of shape mask layer 202 highly, then calculates described B plane and the difference in height of C plane, it is thus achieved that opening 203
Depth H 1, described height can be measured by step instrument or optical device and obtain.In another embodiment of the present invention,
Due to the difference in optical property of described Patterned masking layer 202 with substrate, can optically, such as interferometric method, reflection
Methods etc., directly test obtains the thickness of Patterned masking layer 202, thus obtains the depth H 1 of opening 203.Above-mentioned height can be
The height value of a single point in plane, it is also possible to be by multimetering after average height value, it is also possible to be the height of plane
Distribution value figure, to judge the uniformity on surface and the degree of depth.
Refer to Fig. 3 B, form metal coupling 204 in described opening 203, described metal coupling 204 thickness is less than opening
The degree of depth of 203, the top surface of described metal coupling 204 is A plane.
Electroplating technology can be used to form described metal coupling 204, and the material of described metal coupling 204 can be Au, Cu
Or the metal material such as SuAg.
Step instrument or optical device can be used to measure and to obtain described height difference H 2, it is thus achieved that the figure of opening 203 top sidewall
Shape mask layer surface (B plane) and the height difference H 2 on metal coupling 204 surface (A plane), the thickness of described metal coupling 204
For H1-H2.In like manner, by multimetering, the thickness distribution parameter of diverse location in substrate can also be obtained, more accurately to sentence
Disconnected.
In other detailed description of the invention of the present invention, due to Patterned masking layer 202 and metal coupling 204 material not
With, it is respectively provided with different optical characteristics, optical device can be passed through, directly obtain the height between A plane and C plane in Fig. 3 B
It is poor to spend, thus obtains the height of metal coupling 204.
In another embodiment of the present invention, after measuring the thickness obtaining described metal coupling, remove institute
Before stating Patterned masking layer, also include: judge whether the thickness of described metal coupling 204 is positioned at tolerance interval；If it is not,
Then the thickness of described metal coupling 204 is made compensation, until the thickness of the metal coupling 204 after Bu Changing is positioned at tolerance interval
In.Wherein, the thickness of described metal coupling 204 can be the thickness of single locus, it is possible to so that the average thickness that multi-point is put.
If the thickness of described metal coupling 204 or multi-point average thickness are positioned at tolerance interval, then remove described figure
Change mask layer 202 and carry out follow-up encapsulation step.
If the thickness of described metal coupling 204 is less than described tolerance interval, then need the thickness of metal coupling 204 is entered
Row compensates, concrete, refer to Fig. 4, can continue plating formation on described metal coupling 204 surface and compensate metal level 204a,
Increasing the thickness of the metal coupling ultimately formed, this process is to carry out in situ, it is not necessary to carries out mask layer again graphically, returns
Work low cost.Described compensation metal level 204a surface is D plane, is obtained by the difference in height measuring D plane and C plane after compensating
The thickness of metal coupling, and proceed to judge, repeat the above steps, until the final thickness of metal coupling or the thickness of multiple spot
Degree average bits is in tolerance interval.
In other detailed description of the invention of the present invention, if the thickness of described metal coupling 204 is more than described acceptable model
Enclose, made by etching technics the thickness of described metal coupling 204 decline, until the metal coupling thickness after Ke Shi be positioned at described can
In the range of acceptance, described etching technics can be dry or wet etch technique.
The method for measuring thickness of above-mentioned metal coupling, before Patterned masking layer is removed, enters the thickness of metal coupling
Row is measured, and contributes to finding in earlier stage the exception of metal coupling thickness, carries out in time doing over again rather than wait until to remove figure
After changing mask layer, then the thickness of metal coupling is measured, because after once removing Patterned masking layer, then return
Needs are all removed established metal coupling, mask layer figure or even inculating crystal layer by work, very expensive；Especially for multilamellar
Wiring layer, cost is higher.Thus technical scheme can carry out the original position of low cost to described metal coupling thickness
Compensate so that it is thickness meets requirement, thus greatly reduces the cost done over again, it is ensured that the date of delivery of product.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (8)
1. the method for measuring thickness of a metal coupling, it is characterised in that including:
Thering is provided a substrate, described substrate surface to be formed with the Patterned masking layer with opening, described opening exposes substrate
Part surface；
Metal coupling is formed in described opening；
Measure the thickness obtaining described metal coupling；
After measuring the thickness obtaining described metal coupling, remove described Patterned masking layer.
The method for measuring thickness of metal coupling the most according to claim 1, it is characterised in that measure the described metal of acquisition convex
The method of the thickness of block includes: obtain the depth H 1 of described opening；Obtain open top sidewall Patterned masking layer surface with
The height difference H 2 of metal lug surface, the thickness of described metal coupling is H1-H2.
The method for measuring thickness of metal coupling the most according to claim 2, it is characterised in that obtain the degree of depth of described opening
The method of H1 includes: obtain the apparent height of substrate；Obtain the apparent height of Patterned masking layer；Calculate the surface of described substrate
With the difference in height on the surface of Patterned masking layer, obtain the depth H 1 of opening.
The method for measuring thickness of metal coupling the most according to claim 1, it is characterised in that convex by directly measuring metal
Block surface and the difference in height of metal coupling base plane, obtain the thickness of metal coupling.
The method for measuring thickness of metal coupling the most according to claim 1, it is characterised in that use step instrument or optics thick
Degree detection equipment obtains the thickness of described metal coupling.
The method for measuring thickness of metal coupling the most according to claim 1, it is characterised in that obtain described metal measuring
After the thickness of projection, remove described Patterned masking layer before, also include: judge whether the thickness of described metal coupling is positioned at
In tolerance interval；If it is not, then the thickness of described metal coupling is made compensation, until the thickness position of the metal coupling after Bu Changing
In tolerance interval.
The method for measuring thickness of metal coupling the most according to claim 6, it is characterised in that if the thickness of described metal coupling
Degree, more than described tolerance interval, makes the thickness of described metal coupling decline, until the metal after Ke Shi is convex by etching technics
Block thickness is positioned at described tolerance interval；If the thickness of described metal coupling is less than described tolerance interval, continue to use shape
The technique becoming described metal coupling, deposits metal level in opening, makes the thickness of described metal coupling increase, until metal coupling
Thickness be positioned at described tolerance interval.
The method for measuring thickness of metal coupling the most according to claim 7, it is characterised in that form described metal coupling
Technique is electroplating technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610853108.4A CN106298574A (en) | 2016-09-26 | 2016-09-26 | The method for measuring thickness of metal coupling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610853108.4A CN106298574A (en) | 2016-09-26 | 2016-09-26 | The method for measuring thickness of metal coupling |
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| CN106298574A true CN106298574A (en) | 2017-01-04 |
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| CN201610853108.4A Pending CN106298574A (en) | 2016-09-26 | 2016-09-26 | The method for measuring thickness of metal coupling |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666789A (en) * | 2020-12-02 | 2021-04-16 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
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| CN102698935A (en) * | 2012-01-13 | 2012-10-03 | 东莞宏威数码机械有限公司 | Spin coating device and spin coating method of blue-ray disc covering layer |
| CN103456685A (en) * | 2013-09-13 | 2013-12-18 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for TSV and first layer re-wiring layer needless of using CMP |
| CN104425303A (en) * | 2013-09-05 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring thickness of conductive layer |
| CN104503112A (en) * | 2014-12-16 | 2015-04-08 | 昆山国显光电有限公司 | Method and system for repairing array substrate |
| CN105845593A (en) * | 2016-03-22 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | Etching monitoring method |
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2016
- 2016-09-26 CN CN201610853108.4A patent/CN106298574A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102698935A (en) * | 2012-01-13 | 2012-10-03 | 东莞宏威数码机械有限公司 | Spin coating device and spin coating method of blue-ray disc covering layer |
| CN104425303A (en) * | 2013-09-05 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring thickness of conductive layer |
| CN103456685A (en) * | 2013-09-13 | 2013-12-18 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for TSV and first layer re-wiring layer needless of using CMP |
| CN104503112A (en) * | 2014-12-16 | 2015-04-08 | 昆山国显光电有限公司 | Method and system for repairing array substrate |
| CN105845593A (en) * | 2016-03-22 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | Etching monitoring method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112666789A (en) * | 2020-12-02 | 2021-04-16 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
| CN112666789B (en) * | 2020-12-02 | 2024-05-24 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
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Application publication date: 20170104 |