CN106298424B - Dry etching electrode and etching machine - Google Patents
Dry etching electrode and etching machine Download PDFInfo
- Publication number
- CN106298424B CN106298424B CN201610883714.0A CN201610883714A CN106298424B CN 106298424 B CN106298424 B CN 106298424B CN 201610883714 A CN201610883714 A CN 201610883714A CN 106298424 B CN106298424 B CN 106298424B
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- electrode
- spacer medium
- boss
- dry etching
- shielding plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a kind of including upper electrode and lower electrode staggered relatively, the lower electrode includes electrode body, electrode boss and shielding plate, the electrode body includes the first surface in face of the upper electrode, the electrode boss is based in the first surface, the shielding plate is located at the first surface and surrounds the electrode boss, gap is provided between the shielding plate and the electrode boss, the first surface is provided with groove, the groove abuts with the electrode boss, the first spacer medium of filling in the groove, the orthographic projection of the gap on the first surface is fallen into the range of first spacer medium, first spacer medium is used to isolate plasma and the electrode body.Prevent the phenomenon of paradoxical discharge or generation DC voltage between upper electrode and lower electrode to occur, prevent damage of the etching machine during long-term use, extension device life-span.
Description
Technical field
The present invention relates to lithographic technique field, more particularly, to a kind of dry etching electrode and etching machine.
Background technology
Dry etching (Dry Etching) is the technology that film etching is carried out with plasma, in semiconductor technology and film
Transistor liquid crystal display (TFT-LCD) (Thin Film Transistor-LCD, TFT-LCD) manufacturing process is widely used.In TFT-
In the manufacturing process of LCD array substrate, generally remove the film of substrate surface using dry etching mode and form required circuit diagram
Shape.In dry etching process, reacting gas partial ionization is plasma, the upper electrode of mutual cooperation and bottom by high frequency voltage
Electric field is formed between electrode, plasma is carved under electric field action to the film being placed on the substrate on lower electrode
Erosion.Because upper electrode will not be by plasma etching, therefore upper electrode is ordinary flat electrode, and lower electrode is easy
By plasma etching, how lower electrode structure reasonable in design, which avoids corrosion of the plasma to lower electrode from turning into, is prolonged
In the long dry etching apparatus life-span, reduce the key issue of cost of equipment maintenance.
In the prior art, shielding plate is set to prevent plasma etching lower electrode around lower electrode, but due to electrode
There is gap between boss and shielding plate, when applying high-power radio-frequency voltage between upper electrode and lower electrode, wait from
Daughter can still be directed through corroding lower electrode to the anode layer of lower electrode under electric field action by gap, cause
Paradoxical discharge or generation DC voltage between portion's electrode and lower electrode.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of dry etching electrode and etching machine, to solve in the prior art
Plasma can still be directed through corroding lower electrode to the anode layer of lower electrode under electric field action by gap, lead
The problem of causing paradoxical discharge between upper electrode and lower electrode or producing DC voltage.
In order to solve the above technical problems, on the one hand, the present invention provides a kind of dry etching electrode, including top staggered relatively
Electrode and lower electrode, the lower electrode include electrode body, electrode boss and shielding plate, and the electrode body includes facing
The first surface of the upper electrode, the electrode boss are based in the first surface, and the shielding plate is located at described first
Surface and the encirclement electrode boss, are provided with gap, are set on the first surface between the shielding plate and the electrode boss
There is a groove, the groove abuts with the electrode boss, the first spacer medium of filling in the groove, and the gap is described the
Orthographic projection on one surface is fallen into the range of first spacer medium, first spacer medium be used for isolate plasma with
The electrode body.
Further, the electrode boss includes top surface and the side wall being connected between the top surface and the first surface,
The top surface coats the second spacer medium, and the side wall coats the 3rd spacer medium.
Further, the 3rd spacer medium extends to the top surface and is stacked with the second spacer medium forming layer and connect
Structure.
Further, second spacer medium is provided with multiple raised points, and the raised points are used to place base to be etched
Plate.
Further, fill to first spacer medium of the groove and form spacer medium layer, the spacer medium layer
Top flushed with the first surface.
Further, the electrode boss and the electrode body are integral type structure.
Further, the shielding plate includes the upper plane away from the first surface, and the upper plane and the top surface are neat
It is flat.
Further, first spacer medium is yittrium oxide.
Further, the depth of the groove is 50mm~100mm.
On the other hand, the present invention also provides a kind of etching machine, and the etching machine includes control drive circuit and claim 1
To the dry etching electrode described in 9 any one, the control drive circuit electrically connects the dry etching electrode and to top electricity
Apply radio-frequency voltage between pole and the lower electrode.
Beneficial effects of the present invention are as follows：The first surface of electrode body sets the groove of adjacent electrode boss and fills the
One spacer medium, prevent the gap under electric field action through electrode boss and shielding plate plasma be directed through to
Anode layer between shielding plate and electrode body and corrode lower electrode, prevented to put extremely between upper electrode and lower electrode
Electricity or the phenomenon generation for producing DC voltage, prevent damage of the etching machine during long-term use, extension device life-span.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other obvious modes of texturing are obtained according to these accompanying drawings.
Fig. 1 is the side view for the dry etching lower electrode that the embodiment of the present invention one provides.
Fig. 2 is the top view for the dry etching lower electrode that the embodiment of the present invention one provides.
Fig. 3 is the top view of the electrode boss that the embodiment of the present invention one provides and electrode body.
Fig. 4 is the side view of the electrode boss that the embodiment of the present invention one provides and electrode body.
Fig. 5 is the side view for the dry etching lower electrode that the embodiment of the present invention two provides.
Fig. 6 is the top view for the dry etching lower electrode that the embodiment of the present invention two provides.
Fig. 7 is the schematic diagram that dry etching lower electrode provided in an embodiment of the present invention matches work with upper electrode.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Refer to Fig. 1, Fig. 2 and Fig. 7, the dry etching electrode that embodiment one provides include as shown in Figure 7 upper electrode 40 with
Lower electrode, wherein, lower electrode includes electrode body 102, electrode boss 104 and shielding plate 106.The conduct of electrode body 102
The matrix of lower electrode, which is used to coordinate with upper electrode 40, produces high frequency voltage, because upper electrode 40 will not be by plasma
50 corrosion, therefore upper electrode 40 is ordinary flat electrode.With reference to Fig. 1 and Fig. 2, electrode body 102 is included in face of top electricity
The first surface 1020 of pole 40, electrode boss 104 are based on first surface 1020, and shielding plate 106 is located at first surface 1020
And surround electrode boss 104.In the embodiment illustrated in fig. 2, the rectangular cross-section of electrode boss 104, and electrode boss
104 four angles have carried out fillet processing, and certainly, the section of electrode boss 104 can also be other shapes.
Optionally, shielding plate 106 includes the upper plane 1060 away from first surface 1020, upper plane 1060 and electrode boss
104 top surface 1042 flushes, and prevents the height of shielding plate 106 to be higher than the height of electrode boss 104, influences the steady of substrate 60 and puts
Put so as to influence etching effect.
Shielding plate 106 is covered on electrode body 102, the plasma completely cut off between upper electrode 40 and lower electrode
50 directly contact electrode body 102 surface and corroding electrode body 102.
As shown in figure 1, because shielding plate 106 can not be bonded with the side wall 1040 of electrode boss 104 completely after mounting, then
There will necessarily be gap 100.After high frequency voltage is applied to upper electrode 40 and lower electrode, partial reaction gas is ionized to
Plasma 50, plasma 50 are easily accessible gap 100 and penetrated between shielding plate 106 and electrode body 102, so as to rotten
Lose electrode body 102.In the present embodiment, with reference to Fig. 3 and Fig. 4, electrode body 102 is provided with and is centered around the periphery of electrode boss 104
And it is the ring-type of closing and is looped around the side wall of electrode boss 104 with the groove 202 of electrode boss adjoining, groove 202
1040 peripheries, and groove 202 be connected close to the inwall 2020 of electrode boss 104 with the side wall 1040 of electrode boss 104 and
Flush, i.e., side wall 1040 is connected to form smooth plane with inwall 2020.Preferably, groove 202 is the annular of closing, and ditch
The rectangular cross-section of groove 202 or circular shape.
The first spacer medium 302 is filled with reference to Fig. 1 and Fig. 3, in groove 202, wherein, the be filled in groove 202
One spacer medium 302 forms spacer medium layer, and the top 3020 of spacer medium layer flushes with first surface 1020.Work as plasma
50 enter behind gap 100 not penetrated between shielding plate 106 and electrode body 102 by the stop of spacer medium layer and corrode
Electrode body 102.In a kind of embodiment, orthographic projection of the gap 100 on first surface 1020 falls into the first spacer medium 302
In the range of.
The first surface 1020 of electrode body 102, which sets the groove 202 of adjacent electrode boss 104 and fills the first isolation, to be situated between
Matter 302, prevent that the plasma 50 in gap 100 under electric field action through electrode boss 104 and shielding plate 106 is direct
Penetrate to the anode layer between shielding plate 106 and electrode body 102 and corrode lower electrode, prevent upper electrode 40 and bottom electricity
The phenomenon of paradoxical discharge or generation DC voltage occurs between pole, prevents the damage during equipment use, extension device life-span.
In a kind of embodiment, the rectangular cross-section of groove 202, certainly, the section of groove 202 can also be it is semicircle or
Other shapes easily processed into type.
Further, the depth of groove 202 is 50mm~100mm.The depth of groove 202 it is excessive easily influence lower electrode with it is upper
Portion's electrode 40 cooperation electric discharge, the depth of groove 202 too it is small can not fill the first enough spacer medium 302 play prevent corrosion
Effect.
In the present embodiment, the thickness of shielding plate 106 is identical with the thickness of electrode boss 104, that is, keeps shielding plate 106 to face
The surface of upper electrode 40 flushes with electrode boss 104 in face of the surface of upper electrode 40.Further, shielding plate 106 is by more
Individual sub- shielding plate 106 is spliced, it is preferred that for the electrode boss 104 of rectangle, shielding plate 106 is by four sub- shielding plates 106
It is spliced, the side wall for the fillet that each sub- shielding plate 106 contacts and surrounds electrode boss 104 and connects the fillet
The side wall on two sides, four sub- shielding plates 106 are interconnected to form complete shielding plate 106, and it is convex that shielding plate 106 is enclosed in electrode
The periphery of platform 104 and the surface for covering electrode body 102.
When upper electrode 40 applies radio-frequency voltage with lower electrode, shielding plate 106 has sheltered from electrode body 102, prevents
The surface that plasma 50 directly contacts electrode body 102 causes the anode layer of electrode body 102 that the phenomenon of paradoxical discharge occurs
Or produce DC voltage.
In a kind of embodiment, electrode boss 104 and electrode body 102 are integral type structure, and are made up of aluminum,
Aluminum light weight, it is easy to process.
Incorporated by reference to Fig. 5 and Fig. 6, dry etching electrode and the difference of embodiment one that embodiment two provides are：
In the present embodiment, the top surface 1042 of electrode boss 104 coats the second spacer medium 304.On the one hand, the second isolation is situated between
Matter 304 isolates electrode boss 104 and plasma 50, prevents corrosion of the electrode boss 104 by plasma 50, the opposing party
Face, because the second spacer medium 304 itself has good electric conductivity, putting between upper electrode 40 and lower electrode is not influenceed
Electricity, i.e., the high-frequency electrical pressure drop reacting gas partial ionization for not influenceing to be applied between upper electrode 40 and lower electrode is plasma
Body 50 completes etching process.
Second spacer medium 304 is relatively low for the surface coating cost of electrode boss 104 and does not influence upper electrode 40
The second spacer medium 304 of electric field is formed between lower electrode, the second spacer medium 304 prevents the surface quilt of electrode boss 104
Electric conductivity good between upper electrode 40 and lower electrode is kept while plasma 50 corrodes.
In a kind of embodiment, the 3rd spacer medium 306 is also coated with the side wall 1040 of electrode boss 104, for preventing
Only penetrate into the side wall of electrode boss 104 and the corroding electrode boss 104 of plasma 50 in the gap 100 of shielding plate 106.Further
, the 3rd spacer medium 306 is coated in side wall 1040, and the 3rd spacer medium 306 is along side wall 1040 to top surface 1042
Extend and extend kink 204, kink 204, which is fixed on forming layer on the edge surface of the second spacer medium 304 and is stacked with, to be connect
Structure.
In a kind of embodiment, the first spacer medium 302, the second spacer medium 304, the 3rd spacer medium 306 are identical
Resistant material, in other embodiment, the first spacer medium 302, the second spacer medium 304, the 3rd spacer medium 306
Can be different materials.Consider from cost-effective angle, the corrosion resistance of the plasma 50 of the first spacer medium 302 is strong
, can be higher but corrosion-resistant by the use cost of the first spacer medium 302 in the second spacer medium 304 and the 3rd spacer medium 306
The stronger material of property, the second spacer medium 304 and the 3rd the spacer medium 306 then relatively low material of use cost.For example, first every
It is Yttrium oxide material from medium 302, Yttrium oxide material has good corrosion resistance, the second spacer medium for plasma 50
304 and the 3rd spacer medium 306 be alundum (Al2O3), alundum (Al2O3) hardness is high, not oxidizable, also has for plasma 50
There is preferable corrosion resistance, electric conductivity is good, and is easily coated on the surface of electrode boss 104 of aluminum, and aluminum electrode is convex
Platform 104 is firmly combined with.
Selective filling respectively is required to corrosion resistance and the different of electric conductivity according to electrode boss 104 and electrode body 102
Or the first spacer medium 302 of coating or the second spacer medium 304, save equipment cost.
In the present embodiment, electrode boss 104 is provided with multiple raised points away from the surface of electrode body 102, and raised points are fixed
On the surface of the second spacer medium 304 coated on top surface 1042 and for placing substrate 60 to be etched.Raised points pass through
Substrate 60 is maked somebody a mere figurehead and is positioned on electrode boss 104, the overhead contact with electrode boss 104 of substrate 60 by point-supported mode
Face is small, it is therefore prevented that substantial amounts of heat is applied on substrate 60 and destroys the feelings of substrate 60 caused by electrode boss 104 in etching process
Condition occurs.
Preferably, raised points are made using the first spacer medium 302, and the first spacer medium 302 has well resistance to
The corrosivity of plasma 50, ensure the long-term use of stability of raised points.
The first surface 1020 of electrode body 102, which sets the groove 202 of adjacent electrode boss 104 and fills the first isolation, to be situated between
Matter 302, prevent that the plasma 50 in gap 100 under electric field action through electrode boss 104 and shielding plate 106 is direct
Penetrate to the anode layer between shielding plate 106 and electrode body 102 and corrode lower electrode, prevent upper electrode 40 and bottom electricity
The phenomenon of paradoxical discharge or generation DC voltage occurs between pole, prevents the damage during equipment use, extension device life-span；
The top surface 1042 of electrode boss 104 coats the second spacer medium 304, and side wall 1040 coats the 3rd spacer medium 306, according to top surface
1042nd, side wall 1040 and electrode body 102 are required the difference of corrosion resistance, the first spacer medium 302, the second spacer medium
304 and the 3rd spacer medium 306 different materials can be selected to be made, save equipment cost.
The manufacturing process of dry etching lower electrode is as follows：
1st, electrode boss 104 is made.
Electrode boss 104 is generally section rectangle and positioned at the projection of the center of electrode body 102, using milling machine or adds
Work center is rejected to the electrode boss 104 remained by the material on the periphery of electrode boss 104.
2nd, groove 202 is made.
By milling machine or machining center on the first surface 1020 of electrode body 102, the periphery of electrode boss 104 making ditch
Groove 202, groove 202 can pass through the groove 202 with changing different milling cutter making different cross section shapes according to the requirement of design.
3rd, fill or coat the first spacer medium 302.
First spacer medium 302 is filled in groove 202, and keeps the first spacer medium 302 and electrode after filling
Body 102 flushes in face of the surface of upper electrode 40.Further, the first spacer medium is also coated with the side wall of electrode boss 104
302。
Further, the second spacer medium 304 can also be coated in top surface 1042, be situated between in the isolation of the coating of side wall 1040 the 3rd
Matter 306.
The 4th, shielding plate 106 is installed.
Shielding plate 106 is installed in the first surface 1020 of electrode boss 104, shielding plate 106 covers first surface 1020.One
In kind of embodiment, shielding plate 106 is spliced by more sub- shielding plates 106, it is preferred that for the electrode boss 104 of rectangle,
Shielding plate 106 is spliced by four sub- shielding plates 106, and each sub- shielding plate 106 contacts and surround the one of electrode boss 104
The side wall on two sides of the side wall and connection of individual the fillet fillet, four sub- shielding plates 106 are interconnected to form complete masking
Piece 106, shielding plate 106 are enclosed in the periphery of electrode boss 104 and cover the surface of electrode body 102.
The first surface 1020 of electrode body 102, which sets the groove 202 of adjacent electrode boss 104 and fills the first isolation, to be situated between
Matter 302, prevent that the plasma 50 in gap 100 under electric field action through electrode boss 104 and shielding plate 106 is direct
Penetrate to the anode layer between shielding plate 106 and electrode body 102 and corrode lower electrode, prevent upper electrode 40 and bottom electricity
The phenomenon of paradoxical discharge or generation DC voltage occurs between pole, prevents the damage during equipment use, extension device life-span；
The top surface 1042 of electrode boss 104 coats the second spacer medium 304, and side wall 1040 coats the 3rd spacer medium 306, according to top surface
1042nd, side wall 1040 and electrode body 102 are required the difference of corrosion resistance, the first spacer medium 302, the second spacer medium
304 and the 3rd spacer medium 306 different materials can be selected to be made, save equipment cost.
Etching machine provided in an embodiment of the present invention includes control drive circuit, cooling system and above-mentioned dry etching electrode, control
Drive circuit processed electrically connects dry etching electrode and to applying radio-frequency voltage between upper electrode 40 and lower electrode, and high frequency voltage will
Reacting gas partial ionization performs etching process into the post-etching substrate 60 of plasma 50, and cooling system connection dry etching electrode is simultaneously
Dry etching electrode is cooled down by way of water cooling or air cooling, keeps etching machine normal work.
The above disclosed power for being only several preferred embodiments of the present invention, the present invention can not being limited with this certainly
Sharp scope, one of ordinary skill in the art will appreciate that realizing all or part of flow of above-described embodiment, and weighed according to the present invention
Profit requires made equivalent variations, still falls within and invents covered scope.
Claims (10)
1. a kind of dry etching electrode, including upper electrode and lower electrode staggered relatively, it is characterised in that the lower electrode
Including electrode body, electrode boss and shielding plate, the electrode body includes the first surface in face of the upper electrode, described
Electrode boss is based in the first surface, and the shielding plate is located at the first surface and surrounds the electrode boss, described
Gap is provided between shielding plate and the electrode boss, the first surface is provided with groove, and the groove and the electrode are convex
Platform abuts, the first spacer medium of filling in the groove, and the orthographic projection of the gap on the first surface falls into described the
In the range of one spacer medium, the top of the spacer medium layer flushes with the first surface, and first spacer medium is used for
Isolate plasma and the electrode body.
2. dry etching electrode according to claim 1, it is characterised in that the electrode boss includes top surface and is connected to institute
The side wall between top surface and the first surface is stated, the top surface coats the second spacer medium, the isolation of side wall coating the 3rd
Medium.
3. dry etching electrode according to claim 2, it is characterised in that the 3rd spacer medium extends to the top surface
And fold bridging arrangement with the second spacer medium forming layer.
4. dry etching electrode according to claim 3, it is characterised in that second spacer medium is provided with multiple projections
Point, the raised points are used to place substrate to be etched.
5. dry etching electrode according to claim 1, it is characterised in that fill to first isolation of the groove and be situated between
Matter forms spacer medium layer, and the top of the spacer medium layer flushes with the first surface.
6. dry etching electrode according to claim 1, it is characterised in that the electrode boss is one with the electrode body
Body formula structure.
7. dry etching electrode according to claim 2, it is characterised in that the shielding plate includes deviating from the first surface
Upper plane, the upper plane flushes with the top surface.
8. dry etching electrode according to claim 1, it is characterised in that first spacer medium is yittrium oxide.
9. dry etching electrode according to claim 1, it is characterised in that the depth of the groove is 50mm~100mm.
10. a kind of etching machine, it is characterised in that the etching machine includes any one of control drive circuit and claim 1 to 9 institute
The dry etching electrode stated, the control drive circuit electrically connect the dry etching electrode and to the upper electrode and the bottom
Apply radio-frequency voltage between electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610883714.0A CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610883714.0A CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106298424A CN106298424A (en) | 2017-01-04 |
| CN106298424B true CN106298424B (en) | 2018-04-06 |
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| CN201610883714.0A Active CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
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| CN110223903B (en) * | 2019-04-22 | 2021-07-02 | 江苏鲁汶仪器有限公司 | Ion source baffle plate with uniform symmetrical arrangement and synchronous opening and closing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
| US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
| KR101625516B1 (en) * | 2008-02-08 | 2016-05-30 | 램 리써치 코포레이션 | Plasma processing apparatus and method of processing a semiconductor substrate in the same |
| JP5597463B2 (en) * | 2010-07-05 | 2014-10-01 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
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