CN106298424A - Dry etching electrode and etching machine - Google Patents
Dry etching electrode and etching machine Download PDFInfo
- Publication number
- CN106298424A CN106298424A CN201610883714.0A CN201610883714A CN106298424A CN 106298424 A CN106298424 A CN 106298424A CN 201610883714 A CN201610883714 A CN 201610883714A CN 106298424 A CN106298424 A CN 106298424A
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- Prior art keywords
- electrode
- spacer medium
- boss
- dry etching
- shielding plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses and a kind of include upper electrode staggered relatively and lower electrode, described lower electrode includes electrode body, electrode boss and shielding plate, described electrode body includes the first surface in the face of described upper electrode, described electrode boss is based in described first surface, described shielding plate is located at described first surface and surrounds described electrode boss, it is provided with gap between described shielding plate and described electrode boss, described first surface is provided with groove, described groove adjoins with described electrode boss, the first spacer medium is filled in described groove, in the range of the orthographic projection on the first surface of described gap falls into described first spacer medium, described first spacer medium is used for isolating plasma and described electrode body.Stop the phenomenon of paradoxical discharge or generation DC voltage between upper electrode and lower electrode to occur, prevent etching machine damage during life-time service, extension device life-span.
Description
Technical field
The present invention relates to lithographic technique field, especially relate to a kind of dry etching electrode and etching machine.
Background technology
Dry etching (Dry Etching) is the technology carrying out thin film etching with plasma, at semiconductor technology and thin film
Transistor liquid crystal display (TFT-LCD) (Thin Film Transistor-LCD, TFT-LCD) manufacturing process is widely used.At TFT-
In the manufacturing process of LCD array substrate, dry etching mode is generally utilized to remove the thin film of substrate surface and form required circuit diagram
Shape.In dry etching process, reacting gas partial ionization is plasma by high frequency voltage, the upper electrode cooperated and bottom
Forming electric field between electrode, the thin film being placed on the substrate on lower electrode, under electric field action, is carved by plasma
Erosion.Owing to upper electrode will not be by plasma etching, therefore upper electrode is ordinary flat electrode, and lower electrode is easy
By plasma etching, lower electrode structure the most reasonable in design is avoided plasma to become the corrosion of lower electrode prolonging
In the long dry etching apparatus life-span, reduce the key issue of cost of equipment maintenance.
In prior art, lower electrode is arranged around shielding plate and prevents plasma etching lower electrode, but due to electrode
There is between boss and shielding plate gap, when applying high-power radio-frequency voltage between upper electrode and lower electrode, wait from
Daughter still can be directed through to the anode layer of lower electrode by gap and corrode lower electrode under electric field action, causes
Paradoxical discharge or generation DC voltage between portion's electrode and lower electrode.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of dry etching electrode and etching machine, in order to solve in prior art
Plasma still can be directed through to the anode layer of lower electrode by gap and corrode lower electrode under electric field action, leads
Cause paradoxical discharge or the problem of generation DC voltage between upper electrode and lower electrode.
For solving above-mentioned technical problem, on the one hand, the present invention provides a kind of dry etching electrode, including top staggered relatively
Electrode and lower electrode, described lower electrode includes electrode body, electrode boss and shielding plate, faced by described electrode body includes
The first surface of described upper electrode, described electrode boss is based in described first surface, and described shielding plate is located at described first
Surface and surround described electrode boss, is provided with gap, described first surface sets between described shielding plate and described electrode boss
Having a groove, described groove adjoins with described electrode boss, fills the first spacer medium in described groove, and described gap is described the
In the range of orthographic projection on one surface falls into described first spacer medium, described first spacer medium be used for isolating plasma with
Described electrode body.
Further, described electrode boss includes end face and the sidewall being connected between described end face and described first surface,
Described end face coats the second spacer medium, described sidewall coating the 3rd spacer medium.
Further, described 3rd spacer medium extends to described end face and being stacked with described second spacer medium cambium layer and connects
Structure.
Further, described second spacer medium is provided with multiple raised points, and described raised points is for placing base to be etched
Plate.
Further, the described first spacer medium formation spacer medium layer to described groove, described spacer medium layer are filled
Top flush with described first surface.
Further, described electrode boss and described electrode body are integral type structure.
Further, described shielding plate includes the upper plane deviating from described first surface, and described upper plane is neat with described end face
Flat.
Further, described first spacer medium is yittrium oxide.
Further, the degree of depth of described groove is 50mm～100mm.
On the other hand, the present invention also provides for a kind of etching machine, and described etching machine includes controlling drive circuit and claim 1
To the dry etching electrode described in 9 any one, described control drive circuit electrically connects described dry etching electrode and to described top electricity
Radio-frequency voltage is applied between pole and described lower electrode.
Beneficial effects of the present invention is as follows: the first surface of electrode body arranges the groove of adjacent electrode boss and fills
One spacer medium, prevent under electric field action the plasma through the gap electrode boss and shielding plate be directed through to
Anode layer between shielding plate and electrode body and corrode lower electrode, stopped abnormal between upper electrode and lower electrode putting
The phenomenon of electricity or generation DC voltage occurs, and prevents etching machine damage during life-time service, extension device life-span.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
Other obvious mode of texturing is obtained according to these accompanying drawings.
The side view of the dry etching lower electrode that Fig. 1 provides for the embodiment of the present invention one.
The top view of the dry etching lower electrode that Fig. 2 provides for the embodiment of the present invention one.
The electrode boss that Fig. 3 provides for the embodiment of the present invention one and the top view of electrode body.
The electrode boss that Fig. 4 provides for the embodiment of the present invention one and the side view of electrode body.
The side view of the dry etching lower electrode that Fig. 5 provides for the embodiment of the present invention two.
The top view of the dry etching lower electrode that Fig. 6 provides for the embodiment of the present invention two.
The dry etching lower electrode that Fig. 7 provides for the embodiment of the present invention mates the schematic diagram of work with upper electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Refer to Fig. 1, Fig. 2 and Fig. 7, the dry etching electrode that embodiment one provides include as shown in Figure 7 upper electrode 40 with
Lower electrode, wherein, lower electrode includes electrode body 102, electrode boss 104 and shielding plate 106.Electrode body 102 conduct
The matrix of lower electrode for coordinating generation high frequency voltage with upper electrode 40, owing to upper electrode 40 will not be by plasma
50 corrosion, therefore upper electrode 40 is ordinary flat electrode.In conjunction with Fig. 1 and Fig. 2, electrode body 102 includes in the face of top electricity
The first surface 1020 of pole 40, electrode boss 104 is based on first surface 1020, and shielding plate 106 is located at first surface 1020
And surround electrode boss 104.In the embodiment illustrated in fig. 2, electrode boss 104 cross section is rectangle, and electrode boss
Four angles of 104 have carried out fillet process, and certainly, the cross section of electrode boss 104 can also be other shape.
Optionally, shielding plate 106 includes the upper plane 1060 deviating from first surface 1020, upper plane 1060 and electrode boss
The end face 1042 of 104 flushes, and prevents the height height higher than electrode boss 104 of shielding plate 106, affects steadily putting of substrate 60
Put thus affect etching effect.
Shielding plate 106 is covered on electrode body 102, has completely cut off the plasma between upper electrode 40 and lower electrode
50 directly the contact surfaces of electrode body 102 and corrosion electrode bodies 102.
As it is shown in figure 1, owing to the sidewall 1040 of shielding plate 106 with electrode boss 104 cannot be fitted, then after mounting completely
Gap 100 will necessarily be there is.After upper electrode 40 is applied high frequency voltage with lower electrode, partial reaction gas is ionized to
Plasma 50, plasma 50 is easily accessible gap 100 and penetrates between shielding plate 106 and electrode body 102, thus rotten
Erosion electrode body 102.In the present embodiment, in conjunction with Fig. 3 and Fig. 4, electrode body 102 is provided with and is centered around electrode boss 104 periphery
And the groove 202 adjacent with described electrode boss, groove 202 is the ring-type of closing the sidewall being looped around electrode boss 104
1040 peripheries, and groove 202 is connected with the sidewall 1040 of electrode boss 104 near the inwall 2020 of electrode boss 104 and
Flush, i.e. sidewall 1040 is connected the plane that formation is smooth with inwall 2020.Preferably, groove 202 is the annular closed, and ditch
The cross section of groove 202 is rectangle or circular shape.
In conjunction with Fig. 1 and Fig. 3, in groove 202, it is filled with the first spacer medium 302, wherein, be filled in groove 202
One spacer medium 302 forms spacer medium layer, and the top 3020 of spacer medium layer flushes with first surface 1020.Work as plasma
50 enter into gap 100 after by the stop of spacer medium layer cannot penetrate between shielding plate 106 and electrode body 102 corrode
Electrode body 102.In a kind of embodiment, the gap 100 orthographic projection on first surface 1020 falls into the first spacer medium 302
In the range of.
The first surface 1020 of electrode body 102 arranges the groove 202 of adjacent electrode boss 104 and fills first isolation Jie
Matter 302, prevents under electric field action direct through the plasma 50 in the gap 100 electrode boss 104 and shielding plate 106
Penetrate and corrode lower electrode to the anode layer between shielding plate 106 and electrode body 102, stop upper electrode 40 and bottom electricity
Between pole, the phenomenon of paradoxical discharge or generation DC voltage occurs, the damage during preventing equipment from using, the extension device life-span.
In a kind of embodiment, the cross section of groove 202 is rectangle, certainly, the cross section of groove 202 can also be semicircle or
Other shapes easily processed into type.
Further, the degree of depth of groove 202 is 50mm～100mm.The excessive easy lower electrode that affects of groove 202 degree of depth is with upper
The cooperation electric discharge of portion's electrode 40, groove 202 degree of depth is the least cannot fill the first enough spacer medium 302 and play and prevent corrosion
Effect.
In the present embodiment, the thickness of shielding plate 106 is identical with the thickness of electrode boss 104, i.e. keeps faced by shielding plate 106
The surface of upper electrode 40 flushes in the face of the surface of upper electrode 40 with electrode boss 104.Further, shielding plate 106 is by many
Individual sub-shielding plate 106 is spliced, it is preferred that for the electrode boss 104 of rectangle, shielding plate 106 is by four sub-shielding plates 106
Being spliced, each individual sub-shielding plate 106 contacts and surrounds the sidewall of a fillet of electrode boss 104 and connects this fillet
Article two, the sidewall on limit, four sub-shielding plates 106 are interconnected to form complete shielding plate 106, and it is convex that shielding plate 106 is enclosed in electrode
The periphery of platform 104 also covers the surface of electrode body 102.
When upper electrode 40 applies radio-frequency voltage with lower electrode, shielding plate 106 has sheltered from electrode body 102, has prevented
Plasma 50 directly contacts the phenomenon that the surface of electrode body 102 causes the anode layer generation paradoxical discharge of electrode body 102
Or generation DC voltage.
In a kind of embodiment, electrode boss 104 and electrode body 102 are integral type structure, and make for aluminum,
Aluminum light weight, it is easy to processing.
Incorporated by reference to Fig. 5 and Fig. 6, the dry etching electrode that embodiment two provides is with the difference of embodiment one:
In the present embodiment, the end face 1042 of electrode boss 104 coats the second spacer medium 304.On the one hand, the second isolation is situated between
Matter 304 isolates electrode boss 104 and plasma 50, prevents electrode boss 104 by the corrosion of plasma 50, the opposing party
Face, owing to the second spacer medium 304 self has good electric conductivity, does not affect putting between upper electrode 40 and lower electrode
Electricity, the most not affecting the high-frequency electrical pressure drop reacting gas partial ionization being applied between upper electrode 40 and lower electrode is plasma
Body 50 completes etching process.
Second spacer medium 304 is relatively low for the surface-coated cost of electrode boss 104 and does not affect upper electrode 40
And forming the second spacer medium 304 of electric field between lower electrode, the second spacer medium 304 prevents electrode boss 104 surface quilt
Electric conductivity good between upper electrode 40 and lower electrode is kept while plasma 50 corrosion.
In a kind of embodiment, the sidewall 1040 of electrode boss 104 is also coated with the 3rd spacer medium 306, is used for preventing
Only penetrate into the sidewall of electrode boss 104 and the plasma 50 corrosion electrode boss 104 in the gap 100 of shielding plate 106.Further
, the 3rd spacer medium 306 is coated on sidewall 1040, and the 3rd spacer medium 306 along sidewall 1040 to end face 1042
Extending and extend kink 204, kink 204 is fixed on cambium layer on the edge surface of the second spacer medium 304 and is stacked with and connects
Structure.
In a kind of embodiment, first spacer medium the 302, second spacer medium the 304, the 3rd spacer medium 306 is identical
Resistant material, in other embodiments, first spacer medium the 302, second spacer medium the 304, the 3rd spacer medium 306 is also
It can be different materials.From the point of view of cost-effective, the corrosion resistance of the first spacer medium 302 plasma 50 is strong
In the second spacer medium 304 and the 3rd spacer medium 306, can be by higher but corrosion-resistant for the first spacer medium 302 use cost
The material that the material that property is higher, the second spacer medium 304 and the 3rd spacer medium 306 then use cost are relatively low.Such as, first every
Being Yttrium oxide material from medium 302, Yttrium oxide material has good corrosion resistance, the second spacer medium for plasma 50
304 and the 3rd spacer medium 306 be aluminium sesquioxide, aluminium sesquioxide hardness is high, the most oxidizable, also has for plasma 50
Having preferable corrosion resistance, electric conductivity is good, and is easily coated on electrode boss 104 surface of aluminum, and aluminum electrode is convex
Platform 104 is firmly combined with.
According to electrode boss 104 and electrode body 102, corrosion resistance and the different of electric conductivity are required Selective filling respectively
Or coating the first spacer medium 302 or the second spacer medium 304, save equipment cost.
In the present embodiment, electrode boss 104 deviates from the surface of electrode body 102 and is provided with multiple raised points, and raised points is fixed
On the surface of the second spacer medium 304 being coated on end face 1042 and for placing substrate 60 to be etched.Raised points is passed through
Substrate 60 is maked somebody a mere figurehead and is positioned on electrode boss 104 by point-supported mode, and built on stilts substrate 60 contacts with electrode boss 104
Face is little, it is therefore prevented that the substantial amounts of heat that in etching process, electrode boss 104 produces is applied to destroy the feelings of substrate 60 on substrate 60
Condition occurs.
Preferably, raised points uses the first spacer medium 302 to be made, and the first spacer medium 302 has good resistance to
Plasma 50 corrosivity, it is ensured that the stability of raised points life-time service.
The first surface 1020 of electrode body 102 arranges the groove 202 of adjacent electrode boss 104 and fills first isolation Jie
Matter 302, prevents under electric field action direct through the plasma 50 in the gap 100 electrode boss 104 and shielding plate 106
Penetrate and corrode lower electrode to the anode layer between shielding plate 106 and electrode body 102, stop upper electrode 40 and bottom electricity
Between pole, the phenomenon of paradoxical discharge or generation DC voltage occurs, the damage during preventing equipment from using, the extension device life-span；
The end face 1042 of electrode boss 104 coats the second spacer medium 304, and sidewall 1040 coats the 3rd spacer medium 306, according to end face
1042, sidewall 1040 and the electrode body 102 different requirements to corrosion resistance, first spacer medium the 302, second spacer medium
304 and the 3rd spacer medium 306 different materials can be selected to make, save equipment cost.
The manufacturing process of dry etching lower electrode is as follows:
1, electrode boss 104 is made.
Electrode boss 104 generally cross section rectangle is also positioned at the projection of electrode body 102 center, uses milling machine or adds
The electrode boss 104 i.e. obtaining remaining rejected by the material of electrode boss 104 periphery by work center.
2, groove 202 is made.
By milling machine or machining center on the first surface 1020 of electrode body 102, electrode boss 104 periphery make ditch
Groove 202, groove 202 can be by making the groove 202 of different cross section shape according to the requirement of design with changing different milling cutters.
3, fill or coat the first spacer medium 302.
First spacer medium 302 is filled in groove 202, and keeps the first spacer medium 302 and electrode after filling
Body 102 flushes in the face of the surface of upper electrode 40.Further, the sidewall of electrode boss 104 is also coated with the first spacer medium
302。
Further, it is also possible to coat the second spacer medium 304 at end face 1042, coat the 3rd isolation at sidewall 1040 to be situated between
Matter 306.
4, shielding plate 106 is installed.
First surface 1020 at electrode boss 104 installs shielding plate 106, and shielding plate 106 covers first surface 1020.One
Planting in embodiment, shielding plate 106 is spliced by many sub-shielding plates 106, it is preferred that for the electrode boss 104 of rectangle,
Shielding plate 106 is spliced by four sub-shielding plates 106, and each sub-shielding plate 106 contacts and surround the one of electrode boss 104
The sidewall on two limits of the sidewall of individual fillet and this fillet of connection, four sub-shielding plates 106 are interconnected to form complete covering
Sheet 106, shielding plate 106 is enclosed in the periphery of electrode boss 104 and covers the surface of electrode body 102.
The first surface 1020 of electrode body 102 arranges the groove 202 of adjacent electrode boss 104 and fills first isolation Jie
Matter 302, prevents under electric field action direct through the plasma 50 in the gap 100 electrode boss 104 and shielding plate 106
Penetrate and corrode lower electrode to the anode layer between shielding plate 106 and electrode body 102, stop upper electrode 40 and bottom electricity
Between pole, the phenomenon of paradoxical discharge or generation DC voltage occurs, the damage during preventing equipment from using, the extension device life-span；
The end face 1042 of electrode boss 104 coats the second spacer medium 304, and sidewall 1040 coats the 3rd spacer medium 306, according to end face
1042, sidewall 1040 and the electrode body 102 different requirements to corrosion resistance, first spacer medium the 302, second spacer medium
304 and the 3rd spacer medium 306 different materials can be selected to make, save equipment cost.
The etching machine that the embodiment of the present invention provides includes controlling drive circuit, cooling system and above-mentioned dry etching electrode, control
Drive circuit processed electrically connects dry etching electrode and to applying radio-frequency voltage between upper electrode 40 and lower electrode, and high frequency voltage will
Reacting gas partial ionization becomes plasma 50 post-etching substrate 60 to perform etching process, and cooling system connects dry etching electrode also
By the way of water-cooled or air cooling, cool down dry etching electrode, keep etching machine normally to work.
Above disclosed it is only several preferred embodiment of the present invention, certainly can not limit the power of the present invention with this
Profit scope, one of ordinary skill in the art will appreciate that all or part of flow process realizing above-described embodiment, and weighs according to the present invention
Profit requires the equivalent variations made, and still falls within the scope that invention is contained.
Claims (10)
1. a dry etching electrode, including upper electrode staggered relatively and lower electrode, it is characterised in that described lower electrode
Including electrode body, electrode boss and shielding plate, described electrode body includes the first surface in the face of described upper electrode, described
Electrode boss is based in described first surface, and described shielding plate is located at described first surface and surrounds described electrode boss, described
Being provided with gap between shielding plate and described electrode boss, described first surface is provided with groove, and described groove is convex with described electrode
Platform adjoins, and fills the first spacer medium in described groove, and the orthographic projection on the first surface of described gap falls into described the
In the range of one spacer medium, described first spacer medium is used for isolating plasma and described electrode body.
Dry etching electrode the most according to claim 1, it is characterised in that described electrode boss includes end face and is connected to institute
Stating the sidewall between end face and described first surface, described end face coats the second spacer medium, described sidewall coating the 3rd isolation
Medium.
Dry etching electrode the most according to claim 2, it is characterised in that described 3rd spacer medium extends to described end face
And fold bridging arrangement with described second spacer medium cambium layer.
Dry etching electrode the most according to claim 3, it is characterised in that described second spacer medium is provided with multiple projection
Point, described raised points is for placing substrate to be etched.
Dry etching electrode the most according to claim 1, it is characterised in that fill described first isolation Jie to described groove
Matter forms spacer medium layer, and the top of described spacer medium layer flushes with described first surface.
Dry etching electrode the most according to claim 1, it is characterised in that described electrode boss and described electrode body are one
Body formula structure.
Dry etching electrode the most according to claim 1, it is characterised in that described shielding plate includes deviating from described first surface
Upper plane, described upper plane flushes with described end face.
Dry etching electrode the most according to claim 1, it is characterised in that described first spacer medium is yittrium oxide.
Dry etching electrode the most according to claim 1, it is characterised in that the degree of depth of described groove is 50mm～100mm.
10. an etching machine, it is characterised in that described etching machine includes controlling drive circuit and any one of claim 1 to 9 institute
The dry etching electrode stated, described control drive circuit electrically connects described dry etching electrode and to described upper electrode and described bottom
Radio-frequency voltage is applied between electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610883714.0A CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610883714.0A CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
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| Publication Number | Publication Date |
|---|---|
| CN106298424A true CN106298424A (en) | 2017-01-04 |
| CN106298424B CN106298424B (en) | 2018-04-06 |
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| CN201610883714.0A Active CN106298424B (en) | 2016-10-10 | 2016-10-10 | Dry etching electrode and etching machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110223903A (en) * | 2019-04-22 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of symmetrically ion source baffle of arrangement and synchronous on-off |
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| US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
| US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
| CN102027574A (en) * | 2008-02-08 | 2011-04-20 | 朗姆研究公司 | A protective coating for a plasma processing chamber part and a method of use |
| US20120000886A1 (en) * | 2010-07-05 | 2012-01-05 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
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2016
- 2016-10-10 CN CN201610883714.0A patent/CN106298424B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080110567A1 (en) * | 2006-11-15 | 2008-05-15 | Miller Matthew L | Plasma confinement baffle and flow equalizer for enhanced magnetic control of plasma radial distribution |
| US20080257263A1 (en) * | 2007-04-23 | 2008-10-23 | Applied Materials, Inc. | Cooling shield for substrate processing chamber |
| CN102027574A (en) * | 2008-02-08 | 2011-04-20 | 朗姆研究公司 | A protective coating for a plasma processing chamber part and a method of use |
| US20120000886A1 (en) * | 2010-07-05 | 2012-01-05 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110223903A (en) * | 2019-04-22 | 2019-09-10 | 江苏鲁汶仪器有限公司 | A kind of symmetrically ion source baffle of arrangement and synchronous on-off |
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| Publication number | Publication date |
|---|---|
| CN106298424B (en) | 2018-04-06 |
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